Abstract: Unwanted distortion of the planar configuration of a carbon-based X-ray lithography mask, that would otherwise occur during selective etching of the (silicon) support substrate, is prevented by incorporating a compensation layer of inorganic material that effectively offsets the internal compressive stress characteristic of the carbon. For this purpose, on a top, planar surface of a silicon substrate, a multiple layer structure containing a first layer of carbon having an internal compressive stress characteristic and a second layer of inorganic material having an internal tensile stress characteristic, is plasma-deposited. The tensile stress characteristic of the inorganic layer compensates for the compressive stress characteristic of the carbon layer and causes the composite structure to retain its substantially planar configuration after the underlying silicon substrate has been etched in the course of obtaining a rim structure on which the X-ray transmissive structure is supported.

Abstract: A deep trench is formed by carrying out etching by using an etching gas free of carbon and silicon, which contains at least one member selected from the group consisting of fluorine, chlorine and bromine, while maintaining an article to be etched at such a temperature that the reaction probability between silicon and fluorine, chlorine or bromine contained in the etching gas is less than 1/10 of the reaction probability at 20.degree. C. According to this method, a deep trench having a very narrow width and a large aspect ratio, which cannot be formed according to the conventional method, can be formed very promptly with much reduced side etching.

Abstract: A self-developing radiation resist having extremely high sensitivity to energetic radiation, which resist is resistant to dry etching. The energetic radiation includes electron beam radiation, ion beam radiation, x-ray radiation, and gamma ray radiation. The resist is substantially amorphous; it has extremely high values of G.sub.s and G.sub.m, whereG.sub.s =number of main chain scission/100 electron volts absorbedandG.sub.m =number of monomers liberated/100 electron volts absorbed.The resist is end-capped to render it thermally stable and typically is cross-linked to reduce dry etching. The polymer that forms the resist includes an oxygen heteroatom linear chain organic polymer having haloalkyl substituents and is adapted to depolymerize in the absence of photoinitiators.

Abstract: Methods of making assemblies and assemblies for interconnecting optical fibers and use in integrated optical systems. The optical fiber connector assemblies include a pedestal having a step supporting an optical waveguide device having a buried waveguide. End portions of the step support means for receiving cores and cladding of optical fibers with the optical axes of the cores in alignment with the optical axis or axes of the waveguide.

Abstract: A laser marking method comprising steps of preparing a label material consisting of a colour layer and a transparant layer, applying the label material on a marking surface of a work, illuminating the marking surface through the label material with a laser beam of a wave length transilluminating the transparent layer so as to form a mark of a certain information on the marking surface of the work and in the coloured layer of the label material, and removing the label material from the marking surface of the work to produce a recorded label. The label can be produced simultaniously with the mark on the work wherein the information shown on the label is sophisticatedly identical with the information of the mark on the work surface.

Abstract: The surfaces of solid ionic substrates are etched by a radiation-driven chemical reaction. The process involves exposing an ionic substrate coated with a layer of a reactant material on its surface to radiation, e.g. a laser, to induce localized melting of the substrate which results in the occurrance of a fusion reaction between the substrate and coating material. The resultant reaction product and excess reactant salt are then removed from the surface of the substrate with a solvent which is relatively inert towards the substrate. The laser-driven chemical etching process is especially suitable for etching ionic salt substrates, e.g., a solid inorganic salt such as LiNbO.sub.3, such as used in electro-optical/acousto-optic devices. It is also suitable for applications wherein the etching process is required to produce an etched ionic substrate having a smooth surface morphology or when a very rapid etching rate is desired.

Abstract: The disclosure relates to a method for low temperature (less than 120 degrees C.) hardening of photoresist pattern by providing a high power light beam consisting of light having a wavelength of about 300 nanometers and above which leads to crosslinking throughout the resist. A hot plate constant temperature (less than 120 degrees C.) is optionally used to accelerate the crosslinking reaction, thus incrasing throughput.

Abstract: A pattern of conductive material is formed on a substrate of dielectric material. The substrate comprises a layer of flexible dielectric material having a layer of dimensionally-stable material adhered to one main face. The pattern is formed on the opposite main face of the layer of flexible dielectric material.

Abstract: A foamed plastics substrate has an image formed on its surface by differential ablation by a laser. A composition is applied to the surface in the shape of the image to be formed and has an ablation rate different to that of the foam. After irradiation of the surface, the image is formed in relief on the surface.

Abstract: A pattern is formed by providing a reaction field in which a photo-induced reaction proceeds when a substrate is irradiated with light so as to form a pattern on the substrate, and setting, in the reaction field, conditions for establishing a nonlinear relationship between the intensity of the light and the rate of the photo-induced reaction. The substrate is selectively irradiated with light in the reaction field under the conditions set therein so as to selectively form a pattern in the irradiated portion of the substrate in accordance with the selective irradiation.

Abstract: A method is described for photoetching polyimides efficiently, and without the need for any chemical development steps. At least 1000.ANG. of the polyimide are removed by irradiation of the polyimide with ultraviolet radiation having wavelengths less than 220 nm. To enhance the process, the power density of the radiation is greater than about 60 mJ/cm.sup.2. The presence of an atmosphere containing oxygen enhances the etch rate, although photoetching will occur in other atmospheres.

Abstract: The recording of surface topology is obtained by first bringing the surface into contact with the imaging material-coated side of a dry process dispersion type recording film comprising a transparent substrate on which is coated a very thin, high optical density, opaque body of imaging material, preferably coated with a thin abrasion-resistant protective layer. Radiant energy is then momentarily directed to the imaging material through the transparent substrate. When the heat generated by the absorbed radiant energy is above a given threshold value at a particular location of the imaging material, the material deforms and disperses thereat to form connected or unconnected globules with spaces therebetween. Upon termination of the radiant energy, the dispersed material becomes frozen in place.

Abstract: A new phenomenon in integrated circuit etch processing is presented, explained and utilized to permit better removal of layers overlying integrated circuit structures, and if desired, the formation of conductive layers on such structures by a less complicated and lower temperature process than has been possible by conventional techniques.

Abstract: An improved process for forming an embossed pattern through the use of a writing concentrated beam opening holes in a film capable of undergoing residue free evaporation. A layer of photoresist is overlayed with the film and upon being exposed and processed the layer supplies the prospective embossed pattern.

Abstract: A resist utilized to prepare semiconductor elements or the like comprises a copolymer of, for example, 2,3 dibromo-n-propyl methacrylate and methylmethacrylate. The resist is applied onto a substrate to form a copolymer resist layer, the copolymer resist layer is irradiated with ionizing radiations, the irradiated portions of the copolymer resist layer are dissolved to form a positive pattern, the positive pattern is heated in inert atmosphere to cause crosslinking reaction of reactive radicals remaining in the copolymer resist, and then the assembly is etched with a liquid etchant to form an etched pattern on the substrate. Alternatively, the positive pattern and the underlying substrate are treated with plasma or ions to cause a crosslinking reaction of reactive radicals remaining in the copolymer resist to simultaneously etch portions of the substrate not covered by the positive pattern.

Abstract: A method for producing a plate or sheet useful in planographic printing which comprises providing a substrate of an oleophilic resin having in the molecules thereof carbon-carbon double bonds and/or carbon atoms bonded with a single hydrogen atom in a total amount of not less than 0.05 mol/kg, contacting the substrate with a hydrophilic radical polymerizable compound and exposing the substrate contacted with the compound to actinic way to form a plate having a hydrophilic thin layer chemically combined with the substrate. The substrate may be mixed with conductive or semiconductive powder uniformly dispersed in the oleophilic resin so as to have a volume resistivity in the range of from 10.sup.-3 to 10.sup.8 ohm.cm. In doing so, an electrical printing plate making method which is very advantageous in easiness and usefulness is applicable to the plate or sheet for planographic printing according to the invention.

Abstract: A foil laminated board having a pattern formed in the metallic foil is placed in close contact with a metallized substrate such as a metallized plastic film. The two metal surfaces are subjected to a microwave energy field which duplicates or copies the foil pattern on the metallized substrate or film.

Abstract: A method of manufacturing embossed articles of a preset configuration utilizing a material sensitive to electromagnetic and corpuscular radiation. The method consists in coating a backing with a layer of metal, applying a barrier layer to the metal layer, coating the barrier layer with a layer of inorganic matter capable of interacting chemically with the metal layer and forming the products of interaction whose physical and chemical properties differ from those of the metal layer and the layer of inorganic matter, in projecting a picture of a preset configuration on the applied layers, exposure, and in the removal of the unnecessary portions of the layers until an embossed article of a preset configuration is produced. The barrier layer is made of a material different from the layer of metal and the layer of inorganic matter and inert with respect to the metal layer and the layer of inorganic matter in absence of electromagnetic and corpuscular radiation.

Abstract: A process of producing a material sensitive to an electromagnetic and corpuscular radiation involves successively depositing, onto a transparent substrate, a layer of a semiconductor, a barrier layer inert to the semiconductor layer and a layer of a metal capable of reacting with the semiconductor layer under the effect of the electromagnetic and corpuscular radiation with the formation of the reaction products. After deposition of the metal layer, there is performed annealing at a temperature equal to or exceeding the temperature of diffusion of the material of the barrier layer into the material of the layers adjacent thereto. The annealing is conducted for a period sufficient for a partial or a complete dissolution of the barrier layer.

Abstract: A method for etching using radiation and a gas.