Abstract: The present invention relates to customizing individual workpieces, such as chip, flat panels or other electronic devices produced on substrates, by direct writing a custom pattern. Customization can be per device, per substrate, per batch or at some other small volume that makes it impractical to use a custom mask or mask set. In particular, it relates to customizing a latent image formed in a patterning sensitive layer over a substrate, merging standard and custom pattern data to form a custom pattern used to produce the customized latent image. A wide variety of substrates can benefit from the technology disclosed.

Abstract: A method for manufacturing an electrode for a display apparatus includes printing and drying a conductive paste on a substrate, and printing a glass paste on the dried conductive paste, followed by patterning.

Abstract: A mask is disclosed which includes a plurality of first phase shift regions disposed on a first side of the mask, and a plurality of second phase shift regions disposed on a second side of the mask. The first phase shift regions and second phase shift regions may be alternating phase shift regions in which phase shift of the first phase shift regions is out of phase, for instance by 180 degrees, from phase shift of the second phase shift regions. A method for forming the mask, and a semiconductor device fabrication method using the mask is also disclosed.

Abstract: A capacitive touch panel includes at least one first conductive series extending along a first direction and at least one second conductive series extending along a second direction on a substrate. The first conductive series includes a plurality of first electrodes disposed along the first direction and a plurality of first connecting electrodes respectively disposed between two adjacent first electrodes. The second conductive series includes a plurality of second electrodes disposed along the second direction and a plurality of second connecting electrodes respectively disposed between two adjacent second electrodes. The first direction intersects the second direction. At least one kind of elements of the first electrodes, the first connecting electrodes, the second electrodes, and the second connecting electrodes are formed from a metal mash layer, and the first conductive series and the second conductive series are electrically isolated from each other.

Abstract: Disclosed herein are a printed circuit board, including: a substrate having a patterned circuit layer on one surface thereof; and a resist pattern having a pattern corresponding to the circuit layer and covering the circuit layer so as to close the circuit layer, wherein a width of the resist pattern covering an upper portion of the circuit layer is the same as that of the resist pattern covering a lower portion of the circuit layer, and a method for manufacturing the same.

Abstract: An opto-electric hybrid board includes: an electric circuit board including an insulative layer, and an element mounting electrode formed on the front surface of the insulative layer; an optical element mounted on the element mounting electrode by contact frictional heat; and an optical waveguide including a first cladding layer in contact with the back surface of the insulative layer of the electric circuit board. Between the insulative layer and the first cladding layer, a reinforcing layer is provided at the portion corresponding to the element mounting electrode. A reinforcing layer is provided at the portion corresponding to the element mounting electrode, in the surface of the first cladding layer, which is on the side opposite to the insulative layer. The resin-made reinforcing layer is greater than the first cladding layer in storage modulus at the temperature of the board when the element is being mounted.

Abstract: An exposure mask includes a first transmission portion, a second transmission portion, and a blocking portion. The first transmission portion is configured to, when illuminated with light, transmit the light at a first energy level. The first transmission portion is disposed in association with formation of a first contact hole in an underlying layer. The second transmission portion is configured to, when illuminated with the light, transmit the light at a second energy level. The second transmission portion is disposed in association with formation of a second contact hole in the underlying layer. The blocking portion is configured to block the light, and is disposed in association with a boundary region between a first region and a second region of the underlying layer. The second transmission portion is further configured to enable the second contact hole to be formed deeper into the underlying layer than the first contact hole.

Abstract: A method of manufacturing a touch screen panel includes a first process, a second process, and a third process. Each of a plurality of first electrode serials includes a plurality of first electrode patterns which are separated from each other, neighboring first electrode patterns are electrically connected to each other via a first connection pattern, and a first insulation pattern electrically insulates the first electrode serial from the second electrode serial at an intersection of the first electrode serial and the second electrode serial.

Abstract: A capacitive sensing component includes a substrate and a patterned sensing layer formed on the substrate; the patterned sensing layer includes a plurality of sensing electrodes, the plurality of sensing electrodes are formed of a metal mesh laying on the substrate. The cost of the capacitive sensing component is low. A preparation method of a capacitive sensing component and a touch screen are also provided.

Abstract: A liquid crystal display includes a transparent insulation substrate, a first polarizer, and a semiconductor layer, a thin film transistor, and a backlight unit. The first polarizer is disposed on the transparent insulation substrate. The first polarizer includes a light blocking film and metal wires. The semiconductor layer, disposed on the light blocking film, has a perimeter aligned with a perimeter of the light blocking film. The thin film transistor, disposed on the semiconductor layer, includes a source region and a drain region disposed in the semiconductor layer. The backlight unit, disposed under the transparent insulation substrate, provides light to the transparent insulation substrate. The blocking film reflects substantially all of the light. Gaps are disposed between the metal wires.

Abstract: Embodiments of the disclosure are directed to a device for molecule sensing. In some embodiments, the device includes a first electrode separated from a second electrode by a dielectric layer. The first electrode comprises a large area electrode and the second electrode comprises a small area electrode. At least one opening (e.g., trench) cut or otherwise created into the dielectric layer exposes a tunnel junction therebetween whereby target molecules in solution can bind across the tunnel junction.

Abstract: A magnetoresistive sensing device includes a substrate, a magnetoresistive sensing element, a circuitry element and a shielding unit. The magnetoresistive sensing element, the circuitry element and the shielding unit are disposed at the same side of the substrate. The shielding unit is between the magnetoresistive sensing element and the circuitry element. The shielding unit comprises at least one magnetic material.

Abstract: An apparatus and method for lithography patterning is disclosed. An exemplary method includes receiving a first mask. The method further includes receiving a defect map, the defect map identifying a defect region of a defect of the first mask. The method further includes preparing processing data, the processing data including pattern data of a semiconductor device and data associated with the defect region. The method further includes processing the first mask according to the processing data thereby forming a first portion of a pattern of the semiconductor device on the first mask, the first portion of the pattern excluding the defect region.

Abstract: A method for fabricating a side shield for a magnetic transducer is described. The magnetic transducer has a nonmagnetic layer and a pole on the nonmagnetic layer. The pole has sidewalls and an air-bearing surface location (ABS location) corresponding to an air-bearing surface (ABS). A developable bottom antireflective coating (D-BARC) layer covering the pole and at least a portion of the nonmagnetic layer is provided. The D-BARC layer is photosensitive. A photosensitive mask layer is provided on the D-BARC layer. A first portion of the mask layer and a first portion of the D-BARC layer are removed to form a bi-layer mask. The bi-layer mask has an aperture in the mask layer and the D-BARC layer. At least one side shield layer is deposited. At least a portion of the at least one side shield layer resides in the aperture. The bi-layer mask is also removed.

Abstract: An electrowetting display device comprising a first support plate, a second support plate and a picture element having a space defined by the first support plate, the second support plate and walls of the first support plate. The space comprises a first fluid and a second fluid immiscible with each other, the second fluid being electroconductive or polar and the walls confining the first fluid to the space. The picture element is electrically switchable between a first state without an electric field applied and a second state with an electric field applied, in which in the first state the first fluid is spread out in the picture element and in the second state the first fluid is contracted near one of the walls. Two of the walls have a side facing the space, the sides having different angles with a plane of the first support plate.

Abstract: Disclosed herein are a touch panel and a method for manufacturing the same, the touch panel including: a transparent substrate; a photosensitive ink layer patterned on the transparent substrate and having electric conductivity; and electrode patterns formed at corresponding positions on the patterned photosensitive ink layer, and the method including: preparing a transparent substrate; coating a photosensitive ink having electric conductivity on the transparent substrate to form a photosensitive ink layer; patterning the photosensitive ink layer; and forming electrode patterns on the patterned photosensitive ink layer.

Abstract: A method of manufacturing a photomask includes forming a multi-layer on a substrate and a blank layer on the multi-layer, patterning the blank layer to form openings exposing the multi-layer on a projection region of the substrate, and irradiating at least a portion of the multi-layer exposed by the openings with pulses of light output by a pulse laser whose pulse width is substantially greater than 0.001 seconds. Thus, the photomask has a reflective layer that includes a low-reflectance part corresponding to that part of the multi-layer irradiated by the light output by the pulse laser.

Abstract: A method for manufacturing a semiconductor device includes forming an etch-target layer over a semiconductor substrate having a lower structure, forming a first mask pattern over the etch-target layer, forming a spacer material layer with a uniform thickness over the etch-target layer including the first mask pattern, forming a second mask pattern on an indented region of the space material layer, and etching the etch-target layer with the first mask pattern and the second mask pattern as an etch mask to form a fine pattern.

Abstract: Disclosed is a method of manufacturing an organic light emitting display device. The method include forming a driving thin film transistor and passivation layer on a substrate, forming a bank layer at a boundary portion between adjacent sub-pixels, on the passivation layer, laminating a first photoresist film on the bank layer, forming a first photoresist pattern by irradiating IR light on the first photoresist film in an area except a first sub-pixel, depositing a first organic emission layer in the first sub-pixel area exposed by the first photoresist pattern, removing the first photoresist pattern, laminating a second photoresist film on the bank layer, forming a second photoresist pattern by irradiating IR light on the second photoresist film in an area except a second sub-pixel, depositing a second organic emission layer in the second sub-pixel area exposed by the second photoresist pattern, and removing the second photoresist pattern.

Abstract: The present invention provides a photosensitive resin composition which can form an excellently light-resistant partition wall of an image display device and has excellent patterning properties. One embodiment of the present invention is a photosensitive resin composition for forming a partition wall of an image display device, comprising: (A) a binder polymer; (B) a photopolymerizable compound; (C) a photopolymerization initiator; (D) an inorganic black pigment; (E) a surfactant; and (F) a mercapto group-containing compound, wherein the (B) photopolymerizable compound contains a photopolymerizable compound having at least one unsaturated group and an isocyanuric ring structure in a molecule.

Abstract: The invention relates azide functionalized poly(3-hexylthiophene)s. Various azide functionalized poly(3-hexylthiophene)s and intermediates are disclosed and described, as well as method for making novel monomers that are synthesized and transformed into P3HT-Nmp for use as organic conducting polymers in organic photovoltaic devices.

Abstract: Disclosed is a method for forming patterns of a semiconductor device, which includes: arranging dense patterns to be transferred in a dense pattern region of a wafer; inserting a first dummy pattern for restricting pattern distortion of the dense patterns in an outside of the array of the dense patterns; inserting a first assist feature for restricting pattern distortion of the first dummy pattern in an inside of the first dummy pattern; inserting an array of second assist features for additionally restricting pattern distortion of the first dummy pattern in an outside of the first dummy pattern, thereto designing a pattern layout to be transferred onto the wafer; and forming an array of the dense patterns and the first dummy patterns by transferring the pattern layout onto the wafer through an exposure.

Abstract: A semiconductor device manufacturing method includes applying illumination light to a photomask, and projecting diffracted light components from the photomask via a projection optical system to form a photoresist pattern on a substrate. The photomask includes a plurality of opening patterns which are arranged on each of a plurality of parallel lines at regular second intervals in a second direction and which have regular first intervals in a first direction perpendicular to the second direction. The plurality of opening patterns arranged on the adjacent ones of the plurality of parallel lines are displaced from each other half the second interval in the second direction. Moreover, the dimensions of the plurality of opening patterns and the complex amplitude transmittance of nontransparent region in the photomask are set so that three of the diffracted light components passing through the pupil of the projection optical system have equal amplitude.

Abstract: A method of fabricating a semiconductor integrated circuit (IC) is disclosed. The method includes providing a substrate having two different topography areas adjacent to each other. A step-forming material (SFM) is deposited over the substrate. A patterned SFM is formed in the low topography area of the two areas. The formation of the patterned SFM provides a fairly planar surface across over the substrate.

Abstract: A method of forming patterns includes (a) coating a substrate with a resist composition for negative development to form a resist film, wherein the resist composition contains a resin capable of increasing the polarity by the action of the acid and becomes more soluble in a positive developer and less soluble in a negative developer upon irradiation with an actinic ray or radiation, (b) forming a protective film on the resist film with a protective film composition after forming the resist film and before exposing the resist film, (c) exposing the resist film via an immersion medium, and (d) performing development with a negative developer.

Abstract: In a method of manufacturing a liquid crystal display device in which a plurality of pixels are arranged in a matrix, each of the pixels has an insulator wall structure at a boundary of the pixels, and a wall electrode is provided at least at a side of the wall structure, the wall structure being formed by: using a chemically amplified resist as a material of the wall structure, a step of applying the chemically amplified resist; a step of exposing and developing the chemically amplified resist; a step of irradiating light on an entire surface to perform post exposure; a step of pre-calcinating the chemically amplified resist at a temperature lower than a main calcination temperature; and a step of performing main calcination at a temperature higher than a pre-calcination temperature.

Abstract: An apparatus of semiconductor process including a chuck and a vacuum source is provided. The chuck has a plurality of holes for holding a semiconductor substrate, and the vacuum source is used for providing vacuum suction through the holes to make the semiconductor substrate be subjected to varied suction intensities according to a warpage level thereof.

Abstract: According to one embodiment, a manufacturing method includes forming a desired pattern containing an uneven pattern on a substrate, subjecting the surface of the desired pattern to a water repellent treatment, forming a resist film on the desired pattern, performing an exposure treatment to expose the uneven pattern, rinsing the substrate with water, and drying the substrate.

Abstract: A semiconductor device includes a cell mask pattern disposed in a cell region of a mask substrate and a vernier mask pattern disposed in a vernier region of the mask substrate. The vernier mask pattern includes a variable mask pattern portion to transfer a different shape of pattern depending on the magnitude of exposure energy.

Abstract: The present disclosure involves a method of fabricating a semiconductor device. The method includes providing a substrate having a material layer formed thereon; depositing a photoresist layer on the material layer, the photoresist layer having a vertical dimension; exposing a region of the photoresist layer to radiation, the exposed region having a horizontal dimension, wherein a first ratio of the vertical dimension to the horizontal dimension exceeds a predetermined ratio; and developing the photoresist layer to remove the exposed region at least in part through applying a developer solution containing a first chemical and a second chemical, wherein: the first chemical is configured to dissolve the exposed region of the photoresist layer through a chemical reaction; the second chemical is configured to enhance flow of the first chemical that comes into contact with the photoresist layer; and an optimized second ratio exists between the first chemical and the second chemical.

Abstract: A photomask blank for producing a photomask to which an ArF excimer laser light is applied. The blank includes a light transmissive substrate on which a thin film having a multilayer structure is provided. The thin film has a light-shielding film in which a back-surface antireflection layer, a light-shielding layer and a front-surface antireflection layer are laminated in this order. The light-shielding layer comprises chromium and nitrogen, and the chromium content is more than 50 atomic %. The front-surface antireflection layer and the back-surface antireflection layer each has an amorphous structure made of a material comprising chromium, nitrogen, oxygen and carbon. The chromium content ratio of the front-surface antireflection layer and the back-surface antireflection layer is 40 atomic % or less. A first sum of nitrogen content and oxygen content of the back-surface antireflection layer is less than a second sum of nitrogen content and oxygen content of the front-surface antireflection layer.

Abstract: Disclosed herein is a printed circuit board, including: a base substrate on which a circuit layer is formed; and multi-layer insulating layers formed in a plurality of layers on the base substrate, including the circuit layer, each of the plurality of layers being formed to have a step structure, wherein the multi-layer insulating layer is formed of heterogeneous materials.

Abstract: Spacers are formed by pitch multiplication and a layer of negative photoresist is deposited on and over the spacers to form additional mask features. The deposited negative photoresist layer is patterned, thereby removing photoresist from between the spacers in some areas. During patterning, it is not necessary to direct light to the areas where negative photoresist removal is desired, and the clean removal of the negative photoresist from between the spacers is facilitated. The pattern defined by the spacers and the patterned negative photoresist is transferred to one or more underlying masking layers before being transferred to a substrate.

Abstract: A method of manufacturing a semiconductor device includes: forming an etching mask layer on a semiconductor substrate having an etching target layer, patterning the etching mask layer to form a plurality of etching mask patterns, and forming a subsidiary layer surrounding the etching mask patterns having a uniform critical dimension and gap to form hard mask patterns including the subsidiary layer and the etching mask patterns.

Abstract: A method for reducing roughens of the metals on a ceramic substrate having metal filled via holes, comprising forming via holes, a seed layer, and through film coating, exposure and development process followed by multiple steps of DC electroplating to achieve copper circuit with desired surface roughness.

Abstract: Disclosed herein is a printed circuit board including a base substrate, a photosensitive insulating layer formed on an upper portion of the base substrate, and a circuit pattern formed to be buried within the photosensitive insulating film.

Abstract: The invention relates to an antireflective coating composition comprising a crosslinkable polymer, where the crosslinkable polymer comprises at least one unit of fused aromatic moiety, at least one unit with a phenylene moiety in the backbone of the polymer, and at least one hydroxybiphenyl unit, furthermore where the polymer comprises a crosslinking moiety of structure (4), where R3, R?3 and R??3 are independently hydrogen or a C1-C4alkyl. The invention further relates to a process for forming an image using the composition.

Abstract: A mask and method of fabricating same are disclosed. In an example, a mask includes a substrate, a reflective multilayer coating disposed over the substrate, an Ag2O absorber layer disposed over the reflective multilayer coating, and a tantalum-containing absorber layer disposed over the Ag2O absorber layer. The tantalum-containing absorber layer is disposed over the Ag2O absorber layer outside a mask image region of the mask, such that the mask image region of the mask is free of the tantalum-containing absorber layer. In an example, the tantalum-containing absorber layer is disposed over the Ag2O absorber layer adjacent to the mask image region.

Abstract: A method of manufacturing a display apparatus. The liquid crystal display includes a first substrate and a pixel electrode formed on the first substrate and having a plurality of branches. A plurality of alignment sections are interposed among the branches. An auxiliary liquid crystal layer having discotic liquid crystals is formed on the pixel electrode and the alignment sections. A main liquid crystal layer having a vertical alignment mode is formed on the auxiliary liquid crystal layer. A common electrode is formed on the main liquid crystal layer to apply an electric field to the main liquid crystal layer together with the pixel electrode. A second substrate is formed on the common electrode.

Abstract: Micro-fluid ejection devices, methods for making a micro-fluid ejection device, and methods for reducing a size of a substrate for a micro-fluid ejection head. One such micro-fluid ejection device has a polymeric layer adjacent a substrate and at least one conductive layer embedded in the polymeric layer. The polymeric layer comprises at least two layers of polymeric material.

Abstract: An electrowetting display device includes a first base substrate, a second base substrate facing the first base substrate, an electrowetting layer that includes a first fluid and an electrically conducting second fluid that are immiscible with each other, black partition walls disposed on the first base substrate to partition a display area into pixel areas, and an electronic device that applies a voltage to the electrowetting layer to control the electrowetting layer. The partition walls restrict a flow of at least one of the first fluid or the second fluid.

Abstract: A method for manufacturing an electrode comprising the steps of: applying onto a substrate a conductive paste to form a conductive paste layer comprising; (i) 100 parts by weight of a copper powder coated with a metal oxide selected from the group consisting of silicon oxide (SiO2), zinc oxide (ZnO), aluminum oxide (Al2O3), titanium oxide (TiO2), magnesium oxide (MgO) and a mixture thereof; (ii) 5 to 30 parts by weight of a boron powder; and (iii) 0.1 to 10 parts by weight of a glass frit; dispersed in (iv) an organic vehicle; and firing the conductive paste in air.

Abstract: An electrowetting display device and manufacturing method thereof. The manufacturing method comprises forming pixel electrodes on a substrate, forming an insulation layer on the pixel electrodes, applying light through a mask to expose portions of the insulation layer, developing the insulation layer to at least partially remove the exposed portions of the insulation layer, wherein the developing forms a water repellent layer on the pixel electrodes and partitioning walls on the water repellent layer, and forming an oil layer between the partitioning walls and on the water repellent layer. The water repellent layer and the sides of the partitioning walls are hydrophobic. Upper surfaces of the partitioning walls are hydrophilic. The partition walls are thicker than the water repellent layer.

Abstract: A process of an extreme ultraviolet lithography (EUVL) is disclosed. The process includes receiving an extreme ultraviolet (EUV) mask with multiple states. Different states of the EUV mask are assigned to adjacent polygons and adjacent sub-resolution polygons. The EUV mask is exposed by a nearly on-axis illumination (ONI) with partial coherence ? less than 0.3 to produce diffracted lights and non-diffracted lights. Most of the non-diffracted lights are removed. The diffracted lights and the not removed non-diffracted lights are collected and directed to expose a target by a projection optics box.

Abstract: Provided are a reflective mask blank and a reflective mask which are capable of improving the contrast for inspection light having a wavelength of 200 nm or less in an inspection, capable of improving the contrast for exposure light in use of the mask, and capable of forming a high-resolution fine pattern. A reflective mask blank 10 includes a substrate 1, and a multilayer reflective film 2 adapted to reflect exposure light, a protective film 6 composed mainly of ruthenium (Ru) or its compound on the multilayer reflective film 2, and an absorber film 4 adapted to absorb the exposure light, which are formed in this order on the substrate. The absorber film 4 has a laminated structure including an uppermost layer 4b and a lower layer 4a. The uppermost layer 4b is formed of a material composed mainly of a nitride, an oxide, an oxynitride, a carbide, a carbonitride, or an oxycarbonitride of at least one or more elements selected from Si and Cr.

Abstract: Methods and materials for making a semiconductor device are described. The method includes providing a substrate, forming a surface-modified middle layer (SM-ML) that includes a fluorine-containing material over the substrate, forming a photoresist layer over the SM-ML, exposing the photoresist layer to an exposure energy, and developing the photoresist layer.

Abstract: Methods and apparatus for reducing vibrations in an extreme ultraviolet (EUV) lithography system associated with the cooling of minors are described. According to one aspect of the present invention, an apparatus includes a first assembly, a structure, a vibration isolator, and a hose arrangement. The first assembly includes a heat exchanger and a mirror assembly. The structure is subject to vibrations, and the vibration isolator is arranged to attenuate the vibrations when the vibrations are transmitted through the hose arrangement. The hose arrangement being coupled between the heat exchanger and the structure, and the vibration isolator is coupled to the hose arrangement.

Abstract: Photosensitive materials and method of forming a pattern that include providing a composition of a component of a photosensitive material that is operable to float to a top region of a layer formed from the photosensitive material. In an example, a photosensitive layer includes a first component having a fluorine atom (e.g., alkyl fluoride group). After forming the photosensitive layer, the first component floats to a top surface of the photosensitive layer. Thereafter, the photosensitive layer is patterned.

Abstract: There is herein described a method and apparatus for photoimaging. More particularly, there is described a method and apparatus for photoimaging a substrate (e.g. a web) covered with a wet curable photopolymer wherein a rotatable phototool is pressed and rotated against the substrate to create an imaged substrate which is used to form images suitable for forming electrical circuits such as for printed circuit boards (PCBs), flat panel displays and flexible circuits. There is also described a method and apparatus for directly photoimaging a substrate covered with a wet curable photopolymer, wherein the photoimaged substrate is used to form images such as electrical circuits and a method and apparatus for exposing at least part of a solder mask on a printed circuit board (PCB) using a wet curable photopolymer wherein an imaging process may thereafter occur on the area above the solder mask.

Abstract: A method of forming a integrated circuit pattern. The method includes coating a photoresist layer on a substrate; performing a lithography exposure process to the photoresist layer; performing a multiple-step post-exposure-baking (PEB) process to the photoresist layer; and developing the photoresist layer to form a patterned photoresist layer.