Abstract: A double patterning process is described. A substrate having a first area and a second area is provided. A target layer is formed over the substrate. A patterned first photoresist layer is formed over the target layer, wherein the patterned first photoresist layer has openings and has a first thickness in the first area, and at least a portion of the patterned first photoresist layer in the second area has a second thickness less than the first thickness. A second photoresist layer is then formed covering the patterned first photoresist layer and filling in the openings.

Abstract: According to one embodiment, a pattern forming method is disclosed. The method can include selectively providing a curing agent to a pattern in a template, contacting the template provided the curing agent to a substrate, irradiating the curing agent with light where the template and the substrate are contacted each other to harden the curing agent, demolding the template from the substrate to form a curing agent pattern on the substrate, and etching the substrate on a basis of the curing agent pattern.

Abstract: A method for forming a photoresist mask may comprise providing a ultra-violet (UV) producing gas to a vacuum chamber having a substrate, ionizing the UV producing gas to produce UV rays to irradiate the substrate, and etching features into the substrate through the photoresist mask.

Abstract: A method includes forming a template having a plurality of elements above a process layer, wherein portions of the process layer are exposed between adjacent elements of the template. A directed self-assembly layer is formed over the exposed portions. The directed self-assembly layer has alternating etchable components and etch-resistant components. The etchable components of the directed self-assembly layer are removed. The process layer is patterned using the template and the etch-resistant components of the directed self-assembly layer. Non-periodic elements are defined in the process later by the template and periodic elements are defined in the process layer by the etch-resistant components of the directed self-assembly layer.

Abstract: There is provided a method for forming an image on a transparent member, the method comprising: a) forming a coating layer on a surface of the transparent member; b) attaching a dry film photoresist on the coating layer; c) exposing the dry film photoresist by covering the dry film photoresist with a photo mask having an image pattern and irradiating the photo mask with UV; d) performing a development process for removing other area of the dry film photoresist except for an image area of the dry film photoresist; e) performing an etching process for removing other area of the coating layer except for the image area of the coating layer facing the image area of the dry film photoresist; and f) performing a strip process for removing the image area of the dry film photoresist.

Abstract: A method of lithography patterning includes forming a first resist pattern on a substrate, wherein the first resist pattern including a plurality of openings. A second resist pattern is formed on the substrate and within the plurality of openings of the first resist pattern, wherein the second resist pattern includes at least one opening therein on the substrate. The first resist pattern is removed to uncover the substrate underlying the first resist pattern.

Abstract: Provided is an aromatic hydrocarbon resin with a high carbon concentration and a low oxygen concentration that can be used as a coating agent or a resist resin for semiconductors, as well as a composition for forming an underlayer film for photolithography with excellent etching resistance as an underlayer film for a multilayer resist process, an underlayer film formed from the composition, and a method for forming a pattern using the underlayer film. An aromatic hydrocarbon, an aromatic aldehyde, and a phenol derivative are reacted in the presence of an acidic catalyst to yield an aromatic hydrocarbon resin with a high carbon concentration of 90 to 99.9 mass % and a solubility in propylene glycol monomethyl ether acetate of 10 mass % or more.

Abstract: A surface modifying material for forming a surface modifying layer provided between a substrate and a resist film, the surface modifying material including an epoxy resin having a weight average molecular weight of 1,000 to 50,000; a method of forming a resist pattern, including: forming a surface modifying layer on a substrate using the surface modifying material, forming a resist film on the substrate, on which the surface modified layer has been formed, using a resist composition, conducting exposure of the resist film, and alkali developing the resist film to form a resist pattern; and a method of forming a pattern, including: etching the substrate, on which a resist pattern has been formed by the method of forming a resist pattern.

Abstract: Disclosed is a method of making polysiloxane and polysilsesquioxane based hardmask respond to radiations with positive tone and negative tone simultaneously. Unradiated films are insoluble in developers, showing positivity tone. Radiated films are insoluble in developers as well, showing negative tone. Only half-way radiated films are soluble in developers. The dual-tone photo-imageable hardmask produces splitted patterns. Compositions of dual-tone photo-imageable hardmask based on the chemistry of polysiloxane and polysilsesquioxanes are disclosed as well. Further disclosed are processes of using photo-imageable hardmasks to create precursor structures on semiconductor substrates with or without an intermediate layer.

Abstract: A device for reflective electron-beam lithography and methods of producing the same are described. The device includes a substrate, a plurality of conductive layers formed on the substrate, which are parallel to each other and separated by insulating pillar structures, and a plurality of apertures in each conductive layer. Apertures in each conductive layer are vertically aligned with the apertures in other conductive layers and a periphery of each aperture includes conductive layers that are suspended.

Abstract: According to one embodiment, a pattern forming method is disclosed. The method can include forming an insulating layer on a major surface of a substrate. The method can include forming first and second openings on the insulating layer. The first opening has a first length in a first direction along the major surface, and the second opening has a second length longer than the first length in the first direction. The method can include forming a first pattern in the first opening. The method can include forming a second pattern in the second opening. The method can include forming a self-assembled material film contacting the insulating layer, the first pattern and the second pattern. The method can include forming a third pattern with guidance of the second pattern. In addition, the method can include forming a fourth pattern contacting the first pattern based on the third pattern.

Abstract: There is provided a composition for forming a resist underlayer film that has a high selectivity of dry etching rate even though the composition contains an aromatic ring such as a benzene ring, and that is useful in lowering LER that presents a large problem in EUV (wavelength 13.5 nm) lithography. Moreover, another object is to obtain a composition for forming a resist underlayer film that provides a resist pattern having a desired shape on the resist underlayer film. A resist underlayer film forming composition for lithography which includes a polymer and a solvent, wherein in the polymer, diphenyl sulfone or a derivative thereof is introduced in the main chain of the polymer through an ether bond.

Abstract: There is provided a method for forming an image on a transparent member, the method comprising: a) forming a coating layer on a surface of the transparent member; b) attaching a dry film photoresist on the coating layer; c) exposing the dry film photoresist by covering the dry film photoresist with a photo mask having an image pattern and irradiating the photo mask with UV; d) performing a development process for removing other area of the dry film photoresist except for an image area of the dry film photoresist; e) performing an etching process for removing other area of the coating layer except for the image area of the coating layer facing the image area of the dry film photoresist; and f) performing a strip process for removing the image area of the dry film photoresist.

Abstract: Lithography methods and devices are shown that include a semiconductor structure such as a mask. Methods and devices are shown that include a pattern of mask features and a composite feature. Selected mask features include doubled mask features. Methods and devices shown may provide varied feature sizes (including sub-resolution) with a small number of processing steps.

Abstract: The present invention is a silicon-containing resist underlayer film-forming composition containing at least any one of a condensation product and a hydrolysis condensation product or both of a mixture comprising: one or more kinds of a compound (A) selected from the group consisting of an organic boron compound shown by the following general formula (1) and a condensation product thereof and one or more kinds of a silicon compound (B) shown by the following general formula (2). Thereby, there can be provided a resist underlayer film applicable not only to the resist pattern formed of a hydrophilic organic compound obtained by the negative development but also to the resist pattern formed of a hydrophobic compound obtained by the conventional positive development.

Abstract: A pattern-forming method includes forming a resist underlayer film on a substrate using a resist underlayer film-forming composition. The resist underlayer film-forming composition includes a base component, and a crosslinking agent. The crosslinking agent has a partial structure represented by a following general formula (i). X represents an oxygen atom, a sulfur atom, or —NR—. R represents a hydrogen atom, an alkyl group having 1 to 9 carbon atoms, or an aryl group having 6 to 30 carbon atoms. n1 is an integer from 1 to 6. R1 represents a hydrogen atom, an alkyl group having 1 to 9 carbon atoms, or an aryl group having 6 to 30 carbon atoms.

Abstract: A method of patterning a semiconductor device including dividing a layout into more than one pattern. The method further includes depositing a film stack on a semiconductor substrate, depositing a hard mask on the film stack, and depositing a first photoresist on the hard mask. The method further includes patterning the first photoresist using a first pattern of the more than one pattern. The method further includes etching the hard mask to transfer a design of the first pattern of the more than one pattern to the hard mask. The method further includes depositing a second photoresist over the etched hard mask and patterning the second photoresist using a second pattern of the more than one pattern. The method further includes etching portions of the film stack exposed by a combination of the etched hard mask and the second photoresist.

Abstract: A photolithographic process, wherein a photosensitive layer is formed on a surface of a body to be defined; the photosensitive layer is exposed through a photolithographic mask having zones with lower transparency and zones with higher transparency so as to obtain exposed portions and shielded portions of the photosensitive layer; selective portions of the photosensitive layer chosen between the exposed portions and the shielded portions of the photosensitive layer are removed; and portions of the body under the selective portions of the photosensitive layer are selectively removed. The composite layer includes photoresist and carbon nanotubes, which are embedded in the photoresist and extend in a direction generally transverse to, and in electrical contact with, the body.

Abstract: According to one embodiment, a mask used with an exposure apparatus is disclosed. The mask includes a main pattern, and a sub-pattern having a dimension smaller than a resolution limit of the exposure apparatus. The sub-pattern is arranged next to the main pattern. The sub-pattern includes a first sub-pattern arranged next to the main pattern, and second sub-patterns contacting the first sub-pattern and arranged along a longitudinal direction of the first sub-pattern. The sub-patterns satisfy a condition of P??/(NA(1+?0)). Where P is a pitch of the second sub-patterns, NA is a numerical aperture of the exposure apparatus, ? and ?0 are respectively exposure wave length and maximum ? when the main pattern by using the exposure apparatus.

Abstract: The present invention provides methods and an apparatus controlling and minimizing process defects in a development process, and modifying line width roughness (LWR) of a photoresist layer after the development process, and maintaining good profile control during subsequent etching processes. In one embodiment, a method for forming features on a substrate includes developing and removing exposed areas in the photosensitive layer disposed on the substrate in the electron processing chamber by predominantly using electrons, removing contaminants from the substrate by predominantly using electrons, and etching the non-photosensitive polymer layer exposed by the developed photosensitive layer in the electron processing chamber by predominantly using electrons.

Abstract: There is provided a resist underlayer film forming composition for lithography, which in order to prevent a resist pattern from collapsing after development in accordance with the miniaturization of the resist pattern, is applied to multilayer film process by a thin film resist, has a lower dry etching rate than resists and semiconductor substrates, and has a satisfactory etching resistance relative to a substrate to be processed in the processing of the substrate. A resist underlayer film forming composition used in lithography process by a multiplayer film, comprises a polymer containing a unit structure having an aromatic fused ring, a unit structure having a protected carboxyl group or a unit structure having an oxy ring. A method of forming a pattern by use of the resist underlayer film forming composition. A method of manufacturing a semiconductor device by utilizing the method of forming a pattern.

Abstract: A block copolymer, adapted to self-assemble to form an ordered pattern on a substrate, has first and second blocks with a terminal moiety covalently bonded to the end of the first block. The molecular weight of the terminal moiety is 20% or less than that of the block copolymer and the terminal moiety has a low chemical affinity for the first block. The terminal moiety can assist the accurate positional placement of the domains of the ordered array and lead to improved critical dimension uniformity and/or reduced line edge roughness. The polymer may be useful in combination with a graphoepitaxy template, where the terminal moiety is chosen to associate with a sidewall of the template. This may reduce undesired aggregation of polymer domains at a sidewall and/or assist in domain placement accuracy.

Abstract: A method of forming a master from smaller originals is provided for use in replicating molecular transfer lithography (M×L) templates, cured polymer films for imprinting molds or cured polymer films for photonic applications. A coating layer on a base substrate is successively patterned in two or more areas using dissoluble conformal templates created from original master patterns, wherein areas not being patterned with a template at any given stage of the process are protected with photoresist and templates applied to open areas also partially overlap the resist-protected areas. Overlapping minimizes seam formation in the overall pattern. Templates have etch-resistant functional material that adheres to the coating layer on the base substrate. After dissolving the template to leave only the functional material in the pattern of the original master, etching of the coating layer transfers the pattern to the etched coating layer of the base substrate.

Abstract: An aromatic ring-containing polymer, an underlayer composition including the same, and associated methods, the aromatic ring-containing polymer including a group represented by one of the following Chemical Formulae 1-1, 1-2, 2-1, and 2-2:

Abstract: An apparatus is formed from a double active layer silicon on insulator (DSOI) substrate that includes first and second active layers separated by an insulating layer. An electrostatic comb drive is formed from the substrate to include a first comb formed from the first active layer and a second comb formed from the second active layer. The comb drive may be used to impart a tilting motion to a micro-mirror. The method of manufacturing provides comb teeth exhibiting an aspect ratio greater than 1:20, with an offset distance between comb teeth of the first and second combs that is less than about 6 ?m.

Abstract: A method for forming a resist under layer film includes providing a composition for forming a resist under layer film on a substrate which is to be processed. The composition includes a solvent and a calixarene compound or a derivative of the calixarene compound. The composition is set under an oxidizing atmosphere with an oxygen content of 1% or more by volume to form a resist under layer film.

Abstract: The invention provides a patterning process comprises the steps of: (1) forming a positive chemically amplifying type photoresist film on a substrate to be processed followed by photo-exposure and development thereof by using an organic solvent to obtain a negatively developed pattern, (2) forming a silicon-containing film by applying a silicon-containing film composition comprising a solvent and a silicon-containing compound capable of becoming insoluble in a solvent by a heat, an acid, or both, (3) insolubilizing in a solvent the silicon-containing film in the vicinity of surface of the negatively developed pattern, (4) removing the non-insolubilized part of the silicon-containing film to obtain an insolubilized part as a silicon-containing film pattern, (5) etching the upper part of the silicon-containing film pattern thereby exposing the negatively developed pattern, (6) removing the negatively developed pattern, and (7) transferring the silicon-containing film pattern to the substrate to be processed.

Abstract: A stripping solution for photolithography which can effectively strip away residual materials of a photoresist pattern and etching residual materials, and has excellent anticorrosion properties on SiO2 and a variety of metal materials; and a method for forming a pattern using the stripping solution. A prescribed basic compound is used as a counter amine of the hydrofluoric acid contained in the stripping solution for photolithography, and the stripping solution for photolithography is adjusted to a pH measured at 23° C. of not more than 6.0 or 8.5 or more.

Abstract: The present invention provides a manufacturing method of transparent electrode and mask thereof. The method includes: forming a film on a glass substrate, and coating photo-resist on film; irradiating photo-resist through mask, wherein the mask at corresponding active area of liquid crystal panel forming, from outer area to inner area, at least a first area and a second area, gap of pattern corresponding to transparent electrode in first area being first gap, gap of pattern in second area being second gap, first gap being greater than corresponding default gap, difference between first gap and corresponding default gap being greater than difference between second gap and corresponding default gap: and performing photolithography and etching processes on substrate after exposure to form transparent electrodes on substrate. As such, the present invention can reduce gap errors of formed transparent electrodes in entire active area to improve display effect.

Abstract: A method according to one embodiment includes applying a photoresist to a substrate; exposing the photoresist such that a local intensity of radiation applied to the photoresist at each pixel thereof is a function of a mathematically-generated representation of a target surface shape; developing the resist; and performing a subtractive process on the developed photoresist and the substrate for creating the target surface shape on the substrate. A method according to another embodiment includes applying a photoresist to a substrate; patterning the photoresist using a machine-readable profile; and performing a subtractive process to transfer the profile onto the substrate.

Abstract: Patterned substrates templates are provided, as well as methods comprising a combination of lithography and self-assembly techniques. The patterned substrates may comprise first and second patterns.

Abstract: A pattern mask for patterning a thin film includes a transparent or translucent substrate with a plurality of grooves formed thereon having a pitch of about 4.6 ?m to about 10.8 ?m.

Abstract: A resist under layer film-forming composition comprises (A) an aminated fullerene having at least one amino group bonded to a fullerene skeleton, and (B) a solvent. The composition exhibits excellent etching resistance, causes an under layer film pattern to bend only with difficulty in a dry etching process, and can transfer a resist pattern faithfully onto a substrate to be processed with high reproducibility.

Abstract: A pattern is formed by (1) coating a first positive resist composition onto a substrate, baking, patternwise exposing, PEB, and developing to form a first positive resist pattern including a large area feature, (2) applying a resist-modifying composition comprising a basic nitrogen-containing compound and heating to modify the first resist pattern, and (3) coating a second positive resist composition thereon, patternwise exposing, and developing to form a second resist pattern. The large area feature in the first resist pattern has a film retentivity of at least 50% after the second pattern formation.

Abstract: A photoacid generator P+ A? comprises (a) an antenna group P+ comprising atoms with high EUV photoabsorption cross-sections according to FIG. 1 and A? anions; or (b) an antenna group P+ and A? comprising anions with low photoabsorption cross-sections for EUV; or (c) an antenna group P+, comprising atoms with high EUV photoabsorption cross-sections according to FIG. 1 and A? comprising anions with low photoabsorption cross-sections for EUV. Novel compounds comprise DTFPIO PFBuS, and DTBPIO CN5.

Abstract: A silicon-containing film is formed from a heat curable composition comprising (A) a silicon-containing compound obtained through hydrolytic condensation of a hydrolyzable silicon compound in the presence of an acid catalyst, (B) a hydroxide or organic acid salt of Li, Na, K, Rb or Ce, or a sulfonium, iodonium or ammonium compound, (C) an organic acid, (D) a cyclic ether-substituted alcohol, and (E) an organic solvent. The silicon-containing film ensures effective pattern formation, effective transfer of a photoresist pattern, and accurate processing of a substrate.

Abstract: A multilayer resist process pattern-forming method includes providing an inorganic film over a substrate. A protective film is provided on the inorganic film. A resist pattern is provided on the protective film. A pattern is provided on the substrate by etching that utilizes the resist pattern as a mask. A multilayer resist process inorganic film-forming composition includes a compound, an organic solvent, and a crosslinking accelerator. The compound includes a metal compound that includes a hydrolyzable group, a hydrolysate of a metal compound that includes a hydrolyzable group, a hydrolysis-condensation product of a metal compound that includes a hydrolyzable group, or a combination thereof. The compound includes at least one metal element belonging to Group 6, Group 12, or Group 13 of the Periodic Table of the Elements.

Abstract: Provided is a mask blank which enables EB defect correction to be suitably applied and which further enables a reduction in the thickness of a light-shielding film. A mask blank 10 is used for producing a transfer mask adapted to be applied with ArF exposure light and has a light-shielding film 2 on a transparent substrate 1. The light-shielding film 2 is composed mainly of a material containing a transition metal, silicon, and at least one or more elements selected from oxygen and nitrogen. An etching rate of the light-shielding film by a fluorine-containing substance in a state of not being irradiated with charged particles is low enough to at least ensure etching selectivity with respect to an etching rate of the light-shielding film by the fluorine-containing substance in a state of being irradiated with the charged particles.

Abstract: A method for producing a magnetic recording medium comprising at least a recording layer and a protective film provided on top of a non-magnetic substrate, the method comprising, in the following order, forming a continuous recording layer on the substrate, forming a patterned resist layer, partially removing the recording layer based on a resist pattern, applying an organosilicon compound having an active energy beam-curable functional group onto the recording layer and regions from which the recording layer has been removed, curing the organosilicon compound with an active energy beam, etching the organosilicon compound to expose a magnetic layer, and forming a protective film.

Abstract: A method of forming a master from smaller originals is provided for use in replicating molecular transfer lithography (MxL) templates, cured polymer films for imprinting molds or cured polymer films for photonic applications. A coating layer on a base substrate is successively patterned in two or more areas using dissoluble conformal templates created from original master patterns, wherein areas not being patterned with a template at any given stage of the process are protected with photoresist and templates applied to open areas also partially overlap the resist-protected areas. Overlapping minimizes seam formation in the overall pattern. Templates have etch-resistant functional material that adheres to the coating layer on the base substrate. After dissolving the template to leave only the functional material in the pattern of the original master, etching of the coating layer transfers the pattern to the etched coating layer of the base substrate.

Abstract: A device and method for preparing a device having a superoleophobic surface are disclosed. The method includes providing a substrate; coating a lift-off resist layer on the substrate; baking the lift-off resist layer; layering a photoresist layer on the lift-off resist layer; performing photolithography to create a textured pattern in the photoresist layer and the lift-off resist layer, and chemically modifying the textured pattern to create a superoleophobic surface.

Abstract: An aromatic ring-containing polymer for a resist underlayer, the polymer including a unit represented by the following Chemical Formula 1: wherein, R1 and R2 are independently hydrogen, a C1 to C10 alkyl group, or an aromatic group, A is a functional group derived from an aromatic compound with a heteroatom or without a heteroatom, and n is an integer of one or more.

Abstract: A method of forming ceramic pattern structures of silicon carbide film includes depositing an electron-beam resist or a photo-resist onto a substrate. A portion of the resist is selectively removed from the substrate to form a resist pattern on the substrate. A film of pre-ceramic polymer that includes silicon and carbon is deposited onto the substrate and resist pattern and the pre-ceramic polymer film is cured. A portion of the cured pre-ceramic polymer film on the resist pattern is removed, thereby forming a pre-ceramic polymer pattern on the substrate. The pre-ceramic polymer pattern is then converted to a ceramic pattern.

Abstract: In a method of forming a reticle and electron beam exposure system, first electron beams are irradiated onto a first region of a blank reticle having a light shielding layer and a photosensitive layer, to form first shot patterns. Second electron beams having a cross-sectional area larger than the first electron beams are irradiated onto a second region of the blank reticle. The photosensitive layer is developed to form first and second mask patterns at the first and second regions, respectively. The light shielding layer is etched off using the first and second mask patterns as an etching mask, thereby forming the mother pattern including a first pattern in the first region and a second pattern in the second region. Accordingly, the enlargement of the second electron beams reduces the scan time for the blank reticle, thereby reducing the process time.

Abstract: There is disclosed a resist underlayer film-forming composition comprising, at least: a resin (A) obtained by condensing a compound represented by the following general formula (1) with a compound represented by the following general formula (2) by the aid of an acid catalyst; a compound (B) represented by the general formula (1); a fullerene compound (C); and an organic solvent. There can be a resist underlayer film composition in a multi-layer resist film to be used in lithography, which underlayer film is excellent in property for filling up a height difference of a substrate, possesses a solvent resistance, and is not only capable of preventing occurrence of twisting during etching of a substrate, but also capable of providing an excellently decreased pattern roughness; a process for forming a resist underlayer film by using the composition; and a patterning process.

Abstract: Multiple pitch-multiplied spacers are used to form mask patterns having features with exceptionally small critical dimensions. One of each pair of spacers formed mandrels is removed and alternating layers, formed of two mutually selectively etchable materials, are deposited around the remaining spacers. Layers formed of one of the materials are then etched, leaving behind vertically-extending layers formed of the other of the materials, which form a mask pattern. Alternatively, instead of depositing alternating layers, amorphous carbon is deposited around the remaining spacers followed by a plurality of cycles of forming pairs of spacers on the amorphous carbon, removing one of the pairs of spacers and depositing an amorphous carbon layer. The cycles can be repeated to form the desired pattern. Because the critical dimensions of some features in the pattern can be set by controlling the width of the spaces between spacers, exceptionally small mask features can be formed.

Abstract: The aromatic hydrocarbon resin can be used as a coating material and a resist resin for a semiconductor, and has a high carbon concentration and a low oxygen concentration. A composition for forming an underlayer film for lithography that has excellent etching resistance as an underlayer film for a multilayer resist process, an underlayer film formed with the same, and a pattern forming method using the same are disclosed. An aromatic hydrocarbon is reacted with an aromatic aldehyde in the presence of an acidic catalyst, thereby providing an aromatic hydrocarbon resin that has a high carbon concentration of from 90 to 99.9% by mass and a low oxygen concentration of from 0 to 5% by mass. A composition for forming an underlayer film for lithography contains the resin and an organic solvent, an underlayer film is formed with the same, and a pattern forming method uses the same.

Abstract: The present invention relates to an underlayer composition comprising a polymer, an organic titanate compound and optionally a thermal acid generator, where the polymer comprises at least one fluoroalcohol group and at least one epoxy group. The invention also relates to a process for using this underlayer material as an antireflective coating composition and/or a hard mask for pattern transfer.

Abstract: A method of manufacturing a mask for depositing a thin film is disclosed. In one embodiment, the method includes i) providing a raw material substrate for a deposition mask; ii) removing a portion of the raw material substrate to form a pattern, wherein a plurality of openings are defined in the pattern; and iii) irradiating at least a laser beam onto the openings of the pattern at an inclination angle with respect to the raw material substrate such that inclined portions are formed at the side surfaces of each of the openings of the pattern.

Abstract: Provided is an aromatic hydrocarbon resin with a high carbon concentration and a low oxygen concentration that can be used as a coating agent or a resist resin for semiconductors, as well as a composition for forming an underlayer film for photolithography with excellent etching resistance as an underlayer film for a multilayer resist process, an underlayer film formed from the composition, and a method for forming a pattern using the underlayer film. An aromatic hydrocarbon, an aromatic aldehyde, and a phenol derivative are reacted in the presence of an acidic catalyst to yield an aromatic hydrocarbon resin with a high carbon concentration of 90 to 99.9 mass % and a solubility in propylene glycol monomethyl ether acetate of 10 mass % or more.