Post Image Treatment To Produce Elevated Pattern Patents (Class 430/325)
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Publication number: 20150132699Abstract: A fluorinated photopolymer composition is disclosed having a branched copolymer provided in a fluorinated solvent. The copolymer includes a branching unit, a first repeating unit having a fluorine-containing group, and a second repeating unit having a solubility-altering reactive group. The branched fluorinated photopolymer composition is particularly suited for the fabrication of organic electronic and bioelectronic devices, or other devices having sensitive active organic materials.Type: ApplicationFiled: November 12, 2014Publication date: May 14, 2015Inventors: Douglas Robert Robello, Charles Warren Wright, Diane Carol Freeman, Frank Xavier Byrne, John Andrew DeFranco, Sandra Rubsam, Terrence Robert O'Toole
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Patent number: 9029074Abstract: Provided is a method of water repellent treatment for a pattern surface, the method including the steps of agitatingly mixing a perfluoropolyether-group-containing silane water repellent, an organic acid, a fluorine-containing solvent capable of dissolving the perfluoropolyether-group-containing silane water repellent and the organic acid, and water to hydrolyze the perfluoropolyether-group-containing silane water repellent, thereby obtaining a partial hydrolysate solution; forming a photosensitive resin layer on a substrate; applying the partial hydrolysate solution onto the photosensitive resin layer to form a water-repellent film; performing patterning exposure to the photosensitive resin layer and the water-repellent film; performing heat treatment to collectively cure an exposed portion of the photosensitive resin layer and the water-repellent film; and removing a non-exposed portion of the photosensitive resin layer and the water-repellent film by development treatment to form a pattern.Type: GrantFiled: February 25, 2014Date of Patent: May 12, 2015Assignee: Canon Kabushiki KaishaInventors: Yohei Hamade, Etsuko Sawada, Ken Ikegame, Hiroaki Mihara, Satoshi Tsutsui
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Patent number: 9029070Abstract: There are provided a method of forming a resist pattern includes: a step (1) in which a resist composition containing a base component (A) that generates base upon exposure and exhibits increased solubility in an alkali developing solution by the action of acid is applied to a substrate to form a resist film; a step (2) in which the resist film 2 is subjected to exposure; a step (3) in which baking is conducted after the step (2); and a step (4) in which the resist film 2 is subjected to an alkali development, thereby forming a negative-tone resist pattern in which the unexposed portion 2b of the resist film 2 has been dissolved and removed, and the resist composition used in the step (1).Type: GrantFiled: November 2, 2012Date of Patent: May 12, 2015Assignee: Tokyo Ohka Kogyo Co., LtdInventors: Hiroaki Shimizu, Tsuyoshi Nakamura, Jiro Yokoya, Hideto Nito
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Patent number: 9029062Abstract: A method and photoresist material for the patterning of integrated circuit (IC) components using ultra violet (UV) and extreme ultraviolet lithography (EUV) that includes providing a substrate, forming a first material layer over the substrate, forming a second material layer over the first material layer, the second material layer having a luminescent agent, and exposing one or more portions of the second material layer.Type: GrantFiled: June 30, 2010Date of Patent: May 12, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chien-Wei Wang, Chun-Ching Huang
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Publication number: 20150125794Abstract: A photoresist film containing a sulfonium or iodonium salt of carboxylic acid having an amino group has a high dissolution contrast and offers improved resolution, wide focus margin and minimal LWR when used as a positive resist film adapted for alkaline development and a negative resist film adapted for organic solvent development.Type: ApplicationFiled: October 31, 2014Publication date: May 7, 2015Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Jun Hatakeyama, Masaki Ohashi, Masayoshi Sagehashi
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Publication number: 20150125789Abstract: The present specification provides a photosensitive resin composition comprising an alkali-soluble binder, a crosslinkable compound, a photopolymerization initiator, a solvent, a coloring agent and an epoxy adhesion promoter. The photosensitive resin composition has excellent insulating properties and light-shielding properties and shows excellent chemical resistance in an etching process and a stripping process. Thus, the photosensitive resin composition can be formed into a thin bezel layer having a gradual taper, and thus can provide an integrated touch sensor that makes it possible to prevent short circuits from occurring in metal wiring and minimize any decrease in resistance resulting from high-temperature processing.Type: ApplicationFiled: May 24, 2013Publication date: May 7, 2015Applicant: LG CHEM, LTD.Inventors: Kwang Han Park, Sunghyun Kim, Dongchang Choi, Kyung Soo Choi, Sang Chul Lee, Heeyoung Oh
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Publication number: 20150125788Abstract: Systems and methods are provided for forming features through photolithography. A polymer layer is formed over a substrate. The polymer layer is patterned to form a first feature and a second feature, the first feature and the second feature being separated at a first distance. A rinse material is applied to the polymer layer including the first feature and the second feature. The rinse material is removed from the polymer layer including the first feature and the second feature to cause the first feature and the second feature to come into contact with each other. A third feature is formed based on the first feature and the second feature being in contact with each other.Type: ApplicationFiled: November 5, 2013Publication date: May 7, 2015Applicant: Taiwan Semiconductor Manufacturing Company LimitedInventors: CHUN-LIANG TAI, BI-MING YEN, CHUN-HUNG LEE, DE-FANG CHEN
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Publication number: 20150125787Abstract: A conductive pattern can be formed a reactive polymer comprising pendant tertiary alkyl ester groups, (b) a compound that provides an acid upon exposure to radiation, (c) a crosslinking agent that is capable of reacting in the presence of the acid, and (d) optionally, a photosensitizer. The polymeric layer is patternwise exposed to provide non-exposed regions and exposed regions comprising a polymer comprising carboxylic acid groups. Both the non-exposed regions and the exposed regions of the polymeric layer are contacted with a reducing agent, bleached to remove surface amounts of the reducing agent in both non-exposed and exposed regions of the polymeric layer, and contacted with electroless seed metal ions to oxidize the reducing agent and to form corresponding electroless seed metal nuclei in the exposed regions. The corresponding electroless seed metal nuclei are then electrolessly plated with a conductive metal.Type: ApplicationFiled: November 5, 2013Publication date: May 7, 2015Inventors: Mark Edward Irving, Thomas B. Brust
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Publication number: 20150125680Abstract: The present invention provides a substrate comprising a region where thin films are laminated on a transparent ground substrate, which thin films are, in the order mentioned from the upper surface of the substrate, an ITO thin film (I); an organic thin film (II) having a film thickness of from 0.01 ?m to 0.4 ?m and a refractive index of from 1.58 to 1.85; and an organic thin film (III) having a film thickness of from 0.7 ?m to 20 ?m and a refractive index of from 1.46 to 1.56.Type: ApplicationFiled: May 8, 2013Publication date: May 7, 2015Applicant: TORAY INDUSTRIES, INC.Inventors: Hitoshi Araki, Mitsuhito Suwa, Toru Okazawa
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Patent number: 9023587Abstract: A polymer comprising recurring units (a) of styrene having an HFA group and an ester group adjacent thereto and recurring units (b) having a hydroxyl group is used as base resin to formulate a negative resist composition. The negative resist composition has a high dissolution contrast in alkaline developer, high sensitivity, high resolution, good pattern profile after exposure, and a suppressed acid diffusion rate.Type: GrantFiled: December 23, 2013Date of Patent: May 5, 2015Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Jun Hatakeyama, Koji Hasegawa, Daisuke Domon
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Patent number: 9023585Abstract: A resist composition which generates a base upon exposure and exhibits increased solubility in an alkali developing solution under the action of acid, and the resist composition including: a base component (A) that exhibits increased solubility in an alkali developing solution under the action of acid; an acidic compound component (G1) including a nitrogen-containing cation having a pKa value of 7 or less and a counteranion; and a buffer component (K) including a nitrogen-containing cation and a counteranion being a conjugate base for the acid having a pKa value of 0 to 5.Type: GrantFiled: June 20, 2013Date of Patent: May 5, 2015Assignee: Tokyo Ohka Kogyo Co., LtdInventors: Tsuyoshi Nakamura, Jiro Yokoya, Hideto Nito, Hiroaki Shimizu
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Patent number: 9023586Abstract: The invention provides a positive resist composition, wherein a polymer compound having the weight-average molecular weight in the range of 1,000 to 500,000 and comprising a repeating unit having a hydrogen atom in a carboxyl group and/or in a phenolic hydroxy group therein been substituted by an acid-labile group and a repeating unit “a” having a cyclopentadienyl complex shown by the following general formula (1) is used as a base resin therein. There can be a positive resist composition having not only small edge roughness (LER and LWR) while having a higher resolution than conventional positive resist compositions, but also a good pattern form after exposure and an extremely high etching resistance, especially a positive resist composition using a polymer compound suitable as a base resin for a chemically amplifying resist composition; and a patterning process.Type: GrantFiled: November 20, 2013Date of Patent: May 5, 2015Assignee: Shin-Etsu Chemical Co., Ltd.Inventor: Jun Hatakeyama
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Patent number: 9023582Abstract: A photosensitive polymer includes a repeating unit represented by Formula 1 and the photosensitive polymer has a weight average molecule weight of from about 3,000 to about 50,000:Type: GrantFiled: March 12, 2013Date of Patent: May 5, 2015Assignee: Samsung Display Co., Ltd.Inventor: Sang-Jun Choi
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Patent number: 9023577Abstract: A resist composition containing a base component (A) which exhibits changed solubility in a developing solution under the action of acid, and an acid generator component (B) which generates acid upon exposure, dissolved in an organic solvent (S) which contains an alcohol-based solvent, wherein the base component (A) contains a copolymer (A1) that exhibits increased polarity under the action of acid, and the copolymer (A1) is a copolymer in which a structural unit (a2), which is derived from an acrylate ester in which the hydrogen atom bonded to the carbon atom on the ?-position may be substituted with a substituent, and includes a lactone-containing cyclic group, is dispersed uniformly within the copolymer molecule.Type: GrantFiled: January 9, 2012Date of Patent: May 5, 2015Assignee: Tokyo Ohka Kogyo Co., LtdInventors: Masaru Takeshita, Hirokuni Saito, Jiro Yokoya, Tsuyoshi Nakamura
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Publication number: 20150118623Abstract: A resin composition of the present invention includes a polymer compound (A) containing a repeating unit (Q) represented by the following general formula (1): wherein R1 represents a hydrogen atom, a methyl group, or a halogen atom; R2 and R3 represent a hydrogen atom, an alkyl group, or a cycloalkyl group; L represents a divalent linking group or a single bond; Y represents a substituent excluding a methylol group; Z represents a hydrogen atom or a substituent; m represents an integer of 0 to 4; n represents an integer of 1 to 5; and m+n is 5 or less.Type: ApplicationFiled: December 30, 2014Publication date: April 30, 2015Applicant: FUJIFILM CorporationInventors: Takuya TSURUTA, Tomotaka TSUCHIMURA, Kaoru IWATO
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Publication number: 20150118619Abstract: A salt represented by the formula (I): wherein R1 and R2 independently each represent a hydrogen atom, a hydroxy group or a C1-C12 hydrocarbon group where a methylene group can be replaced by an oxygen atom or a carbonyl group; Ar represents a C6-C36 aromatic hydrocarbon group which can have a substituent or a C6-C36 heteroaromatic hydrocarbon group which can have a substituent; A? represents an organic anion; and “m” and “n” independently each represent an integer of 1 or 2.Type: ApplicationFiled: October 21, 2014Publication date: April 30, 2015Applicant: SUMITOMO CHEMICAL COMPANY, LIMITEDInventors: Yukako ANRYU, Koji ICHIKAWA, Takahiro YASUE
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Publication number: 20150118603Abstract: Embodiments of the invention provide a photo mask capable of simultaneously forming trenches for preventing an under-fill leakage in a process of forming an opening of a solder resist. In accordance with at least one embodiment, the photo mask includes a transparent base material having a non-transmitting film formed on one surface thereof, a semi-transmitting region formed by performing selective etching using a laser on the transparent base material, a transmitting region and a non-transmitting region formed on the transparent base material together with the semi-transmitting region, and an opening of a solder resist and trenches for preventing a leakage of an under-fill liquid or EMC mold may be simultaneously formed using the photo mask.Type: ApplicationFiled: March 25, 2014Publication date: April 30, 2015Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Dae Jo HONG, Oh Hi LEE, Soon Jin CHO
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Publication number: 20150116679Abstract: Embodiments of performing a photolithography process are provided. The method for performing the photolithography process includes providing a substrate and forming a photoresist layer over the substrate. The method further includes forming exposed photoresist portions by performing an exposure process on the photoresist layer. The method further includes performing a surface modifying treatment on the photoresist layer after the exposure process and removing the exposed photoresist portions by performing a developing process.Type: ApplicationFiled: October 30, 2013Publication date: April 30, 2015Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chi-Cheng TSAI, Hung-Chi WU, Tsung-Chuan LEE, Chung-Hsien LIN
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Publication number: 20150118628Abstract: Provided is an actinic-ray- or radiation-sensitive resin composition including a resin (P) comprising any of repeating units (A) of general formula (I) below, each of which contains an ionic structural moiety that when exposed to actinic rays or radiation, is decomposed to thereby generate an acid in a side chain of the resin.Type: ApplicationFiled: December 23, 2014Publication date: April 30, 2015Applicant: FUJIFILM CORPORATIONInventors: Takeshi KAWABATA, Hideaki TSUBAKI, Hiroo TAKIZAWA, Natsumi YOKOKAWA
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Publication number: 20150118627Abstract: A pattern forming method includes: (i) a step of forming a first film by using an actinic ray-sensitive or radiation-sensitive resin composition (I), (ii) a step of exposing the first film, (iii) a step of developing the exposed first film by using an organic solvent-containing developer to form a negative pattern, (iv) a step of forming a second film on the negative pattern by using a specific composition (II), (v) a step of increasing polarity of the specific compound present in the second film, and (vi) a step of removing a specific area of the second film by using the organic solvent-containing remover.Type: ApplicationFiled: December 12, 2014Publication date: April 30, 2015Applicant: FUJIFILM CORPORATIONInventors: Kei YAMAMOTO, Ryosuke UEBA
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Publication number: 20150118616Abstract: A resist pattern formation method with enhanced resolution and process margin in forming a resist pattern. The method includes using a resist composition containing a high-molecular weight compound having a constituent unit represented by the general formula (a0-1) and conducting patterning by negative type development with a developing solution containing an organic solvent to forma resist pattern in which R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms; Va0 represents a divalent hydrocarbon group; na0 is an integer of 0 to 2; R1 represents a chain or cyclic aliphatic hydrocarbon group; R2 represents a group for forming a monocyclic group together with the carbon atom to which R1 is bonded; and R3 represents an optionally substituted cyclic group.Type: ApplicationFiled: October 21, 2014Publication date: April 30, 2015Inventors: Takayoshi Mori, Junichi Tsuchiya, Yusuke Suzuki
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Publication number: 20150118620Abstract: A salt represented by formula (I): wherein R1 and R2 independently in each occurrence represent a hydrogen atom, a hydroxy group or a C1-C12 hydrocarbon group where a methylene group can be replaced by an oxygen atom or a carbonyl group; Ar1 and Ar2 each independently represent a C6-C36 aromatic hydrocarbon group which can have a substituent or a C6-C36 heteroaromatic hydrocarbon group which can have a substituent; A? and A?? each independently represent an organic anion; and “m” and “n” independently each represent an integer of 1 to 2.Type: ApplicationFiled: October 21, 2014Publication date: April 30, 2015Applicant: SUMITOMO CHEMICAL COMPANY, LIMITEDInventors: Yukako ANRYU, Koji ICHIKAWA, Masafumi YOSHIDA
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Patent number: 9017921Abstract: A photoresist composition includes a binder resin combined with a black dye, a monomer, a photo-polymerization initiator and a remainder of a solvent.Type: GrantFiled: March 29, 2013Date of Patent: April 28, 2015Assignee: Samsung Display Co., Ltd.Inventors: Soo-Hye Ryu, Yi-Seop Shim, Chang-soon Jang, Chul Huh
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Patent number: 9017932Abstract: A processed substrate and a method for easily manufacturing the processed substrate with high efficiency are provided, the processed substrate having openings in respective surfaces thereof that are matched to each other in size. The processed substrate includes a light transmissive substrate having a plurality of through-holes. Each of the through-holes has a large-diameter opening and a small-diameter opening, the large-diameter opening being larger in size than the small-diameter opening by 5% or less of the size of the large-diameter opening. As such, through-holes with openings in the respective surfaces of the processed substrate that are matched to each other in size can be provided.Type: GrantFiled: October 4, 2013Date of Patent: April 28, 2015Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Hirofumi Imai, Koki Tamura, Koichi Misumi, Takahiro Asai
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Patent number: 9017924Abstract: A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, including a base component (A) which exhibits changed solubility in a developing solution under action of acid, the base component (A) including a polymeric compound (A1) containing a structural unit (a0) represented by general formula (a0-1) shown below. In the formula, W1 represents a group which is formed by polymerization reaction of a group containing a polymerizable group; Y1 and Y2 each independently represents a divalent linking group; Y3 represents a carbonyl group or an alkylene group; R2 and R3 each independently represents a fluorine atom or a fluorinated alkyl group; Mm+ represents an organic cation having a valency of m; and m represents an integer of 1 or more.Type: GrantFiled: March 4, 2014Date of Patent: April 28, 2015Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Daichi Takaki, Yoshiyuki Utsumi
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Patent number: 9017931Abstract: A negative pattern is formed by coating a resist composition comprising a polymer comprising recurring units having a tertiary ester type acid labile group having a plurality of methyl or ethyl groups on alicycle and an acid generator onto a substrate, prebaking, exposing to high-energy radiation, baking, and developing in an organic solvent developer so that the unexposed region of resist film is dissolved away and the exposed region of resist film is not dissolved. The resist composition exhibits a high dissolution contrast during organic solvent development and forms a fine hole or trench pattern of dimensional uniformity.Type: GrantFiled: August 16, 2013Date of Patent: April 28, 2015Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Koji Hasegawa, Jun Hatakeyama, Masayoshi Sagehashi, Teppei Adachi
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Patent number: 9017922Abstract: A chemically amplified resist composition comprising a base polymer and an amine quencher in the form of a ?-alanine, ?-aminobutyric acid, 5-aminovaleric acid, 6-aminocaproic acid, 7-aminoheptanoic acid. 8-aminooctanoic acid or 9-aminononanoic acid derivative having an unsubstituted carboxyl group has a high contrast of alkaline dissolution in rate before and after exposure and forms a pattern of good profile at a high resolution, minimal roughness and wide DOF.Type: GrantFiled: September 10, 2013Date of Patent: April 28, 2015Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Jun Hatakeyama, Masayoshi Sagehashi
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Publication number: 20150111157Abstract: Provided is a method of forming a pattern, including forming a film comprising an actinic-ray- or radiation-sensitive resin composition comprising, resin (A) comprising any of repeating units of general formula (I) below, which resin when acted on by an acid, decreases its solubility in a developer comprising an organic solvent, and a compound (B) expressed by any of general formulae (B-1) to (B-3) below, which compound when exposed to actinic rays or radiation, generates an acid, exposing the film to actinic rays or radiation, and developing the exposed film with a developer comprising an organic solvent to thereby obtain a negative pattern.Type: ApplicationFiled: December 23, 2014Publication date: April 23, 2015Applicant: FUJIFILM CORPORATIONInventors: Keita KATO, Michihiro SHIRAKAWA, Akinori SHIBUYA, Akiyoshi GOTO, Shohei KATAOKA, Tomoki MATSUDA
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Publication number: 20150111154Abstract: There is provided a pattern forming method including: (a) a process of forming a film by resin (P) having a repeating unit (a) having a cyclic structure and a partial structure represented by the following Formula (I), (II-1) or (II-2), and a repeating unit (b) having a group which decomposes by the action of an acid to generates a polar group, and an actinic ray-sensitive or radiation-sensitive resin composition containing compound (B) which generates acid upon irradiation with an actinic ray or radiation; (b) a process of exposing the film; and (c) a process of forming a negative-type pattern by performing development using a developer including an organic solvent, an actinic ray-sensitive or radiation-sensitive resin composition used therefor, a resist film, a method of manufacturing an electronic device, and an electronic device.Type: ApplicationFiled: December 24, 2014Publication date: April 23, 2015Applicant: FUJIFILM CORPORATIONInventor: Hidenori TAKAHASHI
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Publication number: 20150111155Abstract: A resist composition including a polymeric compound containing a structural unit derived from a compound represented by general formula (a0-m), and a method of forming a resist pattern using the resist composition. R1 represents a polymerizable group; Y1 represents a hydrocarbon group of 1 to 30 carbon atoms; L1 represents a single bond or a carbonyl group; Y2 represents a divalent linking group, and R2 represents a hydrogen atom or a hydrocarbon group, provided that Y2 and R2 may be mutually bonded to form a ring with the nitrogen atom having Y2 and R2 bonded thereto; R3 represents a hydrogen atom or a hydrocarbon group; Y3 represents a group which forms an aromatic ring together with the two carbon atoms having Y3 bonded thereto, provided that the aromatic ring may have a nitro group or a substituent other than the nitro group bonded to the aromatic ring.Type: ApplicationFiled: December 23, 2014Publication date: April 23, 2015Inventors: Akiya Kawaue, Yoshiyuki Utsumi, Jiro Yokoya
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Publication number: 20150111135Abstract: The pattern forming method of the present invention includes: (i) forming a film including an actinic ray-sensitive or radiation-sensitive resin composition containing a compound (A) represented by General Formula (I) shown below; a resin (P) capable of decreasing solubility with respect to a developer including organic solvent by the action of an acid; and a compound (B) capable of generating an acid by irradiation of actinic rays or radiation; (ii) irradiating the film with actinic rays or radiation; (iii) developing the film irradiated with the actinic rays or radiation using a developer including an organic solvent. [Chem.Type: ApplicationFiled: December 23, 2014Publication date: April 23, 2015Applicant: FUJIFILM CorporationInventors: Shohei KATAOKA, Akinori SHIBUYA, Akiyoshi GOTO, Tomoki MATSUDA, Toshiaki FUKUHARA
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Patent number: 9012129Abstract: A resist composition including a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component (B) including a compound represented by (b1-1), a compound represented by (b1-1?) and/or a compound represented by (b1-1?) (R1?-R3? represents an aryl group or an alkyl group, provided that at least one of R1?-R3? represents a substituted aryl group being substituted with a group represented by (b1-1-0), and two of R1?-R3? may be mutually bonded to form a ring with the sulfur atom; X represents a C3-C30 hydrocarbon group; Q1 represents a carbonyl group-containing divalent linking group; X10 represents a C1-C30 hydrocarbon group; Q3 represents a single bond or a divalent linking group; Y10 represents —C(?O)— or —SO2—; Y11 represents a C1-C10 alkyl group or a fluorinated alkyl group: Q2 represents a single bond or an alkylene group; and W represents a C2-C10 alkylene group).Type: GrantFiled: January 6, 2014Date of Patent: April 21, 2015Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Hideo Hada, Yoshiyuki Utsumi, Takehiro Seshimo, Akiya Kawaue
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Patent number: 9012111Abstract: A photo-curable resin composition comprising an epoxy-containing polymer, a photoacid generator in the form of an onium salt having tetrakis(pentafluorophenyl)borate anion, a solvent, and optionally an epoxy resin crosslinker forms a coating which serves as a protective film for the protection of electric/electronic parts.Type: GrantFiled: May 31, 2013Date of Patent: April 21, 2015Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Satoshi Asai, Kyoko Soga, Hideto Kato
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Patent number: 9012132Abstract: Provided is a method including providing a substrate and forming a bottom anti-reflective coating (BARC) on the substrate. The BARC includes a first portion overlying a second portion, which has a different composition than the first portion. The different composition may provide a different dissolution property of the BARC in a developer. A photoresist layer is formed on the first portion of the BARC. The photoresist layer is then irradiated and developed. The developing includes using a developer to remove a region of the photoresist layer and a region of the first and second portions of the BARC.Type: GrantFiled: January 2, 2013Date of Patent: April 21, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventor: Ching-Yu Chang
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Publication number: 20150104746Abstract: The invention provides a method of concentrating a waste liquid produced by development, the method including: obtaining a waste liquid produced by: exposing a planographic printing plate precursor, including: an image recording layer including: an infrared absorbing dye, a polymerization initiator, and a polymerizable compound, and a protective layer on a support, and performing a development process by using a developer liquid that contains an anionic surfactant having a naphthalene skeleton and/or a nonionic surfactant having a naphthalene skeleton in an amount of 1-10% by mass, that contains an organic solvent that has a boiling temperature in a range of 100-300° C. in an amount of 2% by mass or less, and that has a pH of 6.0-9.5; and evaporation-concentrating the waste liquid such that [an amount of the waste liquid after the concentration/an amount of the waste liquid before the concentration] is from 1/10 to 1/2 on a volume basis.Type: ApplicationFiled: December 18, 2014Publication date: April 16, 2015Inventors: Koji WARIISHI, Fumikazu KOBAYASHI, Takanori MORI
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Patent number: 9005878Abstract: A thiosulfate polymer composition includes an electron-accepting photosensitizer component, either as a separate compound or as an attachment to the thiosulfate polymer. The thiosulfate polymer composition can be applied to various articles and used to form a predetermined polymeric pattern after photothermal reaction to form crosslinked disulfide bonds, removing non-crosslinked polymer, and reaction with a disulfide-reactive material.Type: GrantFiled: January 20, 2014Date of Patent: April 14, 2015Assignee: Eastman Kodak CompanyInventors: Deepak Shukla, Kevin M. Donovan, Mark R. Mis
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Patent number: 9005874Abstract: There are provided a novel compound, a polymeric compound, a resist composition, an acid generator and a method of forming a resist pattern the compound represented by general formula (1-1): wherein each of R1 and R3 independently represents a single bond or a divalent linking group; A represents a divalent linking group; each of R2 and R4 independently represents a hydroxyl group, a hydrocarbon group which may have a substituent, or a group represented by general formula (1-an1), (1-an2) or (1-an3), provided that at least one of R2 and R4 represents a group represented by general formula (1-an1), (1-an2) or (1-an3); and n0 is preferably 0 or 1, and wherein Y1 represents a single bond or —SO2—; R5 represents a linear or branched monovalent hydrocarbon group of 1 to 10 carbon atoms, cyclic monovalent hydrocarbon group of 3 to 20 carbon atoms or monovalent hydrocarbon group of 3 to 20 carbon atoms having a cyclic partial structure which may be substituted with a fluorine atom; and M+ represents an organic caType: GrantFiled: April 18, 2012Date of Patent: April 14, 2015Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Yoshitaka Komuro, Yoshiyuki Utsumi, Akiya Kawaue, Masatoshi Arai
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Patent number: 9005871Abstract: Compounds of the formula (I), wherein Ar1 is for example phenylene or biphenylene both unsubstituted or substituted; Ar2 and Ar3 are for example independently of each other phenyl, naphthyl, biphenylylyl or heteroaryl, all optionally substituted; or Ar1 and Ar2 for example together with a direct bond, O, S or (CO), form a fused ring system; R is for example hydrogen, C3-C30cycloalkyl or C1-C18alkyl; and R1, R2 and R3 independently of each other are for example C1-C10haloalkyl; are effective photoacid generators (PAG).Type: GrantFiled: October 8, 2009Date of Patent: April 14, 2015Assignee: BASF SEInventors: Hitoshi Yamato, Toshikage Asakura, Yuichi Nishimae
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Publication number: 20150098984Abstract: The present disclosure provides hollow nanostructures, methods of forming thereof, and methods of delivery of further nanomaterials utilizing the hollow nanostructures. The hollow nanostructures can be formed by illuminating particles, such as spherical particles, to create a scattering pattern that can be captured on, for example, a photoresist. Thus formed nanoparticles can have a substantially frusto-conical shape that can be tailored based on a variety of factors, including, for example, particle size, particle shape, light exposure characteristics, and light polarization.Type: ApplicationFiled: October 8, 2014Publication date: April 9, 2015Inventors: Chih-Hao Chang, Xu A. Zhang
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Publication number: 20150099229Abstract: Negative-working lithographic printing plate precursors have improved bakeability and good shelf life and can be imaged using either UV or infrared radiation. These precursors have a negative-working imageable layer that has a unique polymeric binder comprising a polymeric backbone and further comprising at least (a) and (b) pendant groups distributed in random order along the polymeric backbone. The (a) pendant groups are ethylenically unsaturated polymerizable groups, and the (b) pendant groups are defined by Structures (I), (II), and (III) described in the disclosure.Type: ApplicationFiled: October 3, 2013Publication date: April 9, 2015Inventors: Christopher D. Simpson, Harald Baumann, Udo Dwars, Michael Flugel
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Publication number: 20150099230Abstract: Provided is a copolymer for lithography containing a monomer containing an acid leaving group and a monomer not containing an acid leaving group, in which N(v1)/Nave is from 1.01 to 1.09 and all of N(v2)/Nave, N(v3)/Nave, and N(v4)/Nave are from 0.95 to 1.05 when, among five fractions obtained by dividing an eluate providing a peak according to the copolymer in an elution curve obtained by GPC in order of elution so as to have an equal volume, ratios of monomer units containing an acid leaving group among the total monomer units constituting a copolymer included in the respective fractions from the first which is eluted earliest to the fourth are denoted as N(v1) mol % to N(v4) mol %, respectively, and the ratio of the monomer unit containing an acid leaving group among the total monomer units constituting a copolymer included in the sum of the five fractions is denoted as Nave mol %.Type: ApplicationFiled: March 5, 2013Publication date: April 9, 2015Applicant: Mitsubishi Rayon Co., Ltd.Inventors: Atsushi Yasuda, Tomoya Oshikiri, Miho Chujo
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Patent number: 8999621Abstract: A pattern forming method includes: (i) forming a film from a chemical amplification resist composition; (ii) exposing the film, so as to form an exposed film; and (iii) developing the exposed film by using an organic solvent-containing developer, wherein the chemical amplification resist composition contains: (A) a resin substantially insoluble in alkali; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a crosslinking agent; and (D) a solvent, a negative chemical amplification resist composition used in the method, and a resist film formed from the negative chemical amplification resist composition.Type: GrantFiled: October 5, 2010Date of Patent: April 7, 2015Assignee: FUJIFILM CorporationInventors: Yuichiro Enomoto, Sou Kamimura, Shinji Tarutani, Keita Kato, Kaoru Iwato
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Patent number: 9001308Abstract: A pattern generator includes a minor array plate having a mirror, at least one electrode plate disposed over the minor array plate, a lens let disposed over the minor, and at least one insulator layer sandwiched between the mirror array plate and the electrode plate. The electrode plate includes a first conducting layer and a second conducting layer. The lens let has a non-straight sidewall formed in the electrode plate. The pattern generator further includes at least one insulator sandwiched between two electrode plates. The non-straight sidewall can be a U-shaped sidewall or an L-shaped sidewall.Type: GrantFiled: February 1, 2013Date of Patent: April 7, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chen-Hua Yu, Tien-I Bao, Chih Wei Lu, Jaw-Jung Shin, Shy-Jay Lin, Burn Jeng Lin
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Patent number: 8999630Abstract: An image is formed via positive/negative reversal on organic solvent development using a photoresist film comprising a polymer comprising recurring units of isosorbide (meth)acrylate in which one hydroxyl group of isosorbide is bonded to form (meth)acrylate and the other hydroxyl group is substituted with an acid labile group and an acid generator. The resist film is characterized by a high dissolution contrast between the unexposed and exposed regions. The photoresist film is exposed to radiation and developed in an organic solvent to form a fine hole pattern with good size control and high sensitivity.Type: GrantFiled: July 11, 2012Date of Patent: April 7, 2015Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Jun Hatakeyama, Koji Hasegawa, Kazuhiro Katayama
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Patent number: 8999625Abstract: Embodiments include a silicon-containing antireflective material including a silicon-containing base polymer, a non-polymeric silsesquioxane material, and a photoacid generator. The silicon-containing base polymer may contain chromophore moieties, transparent moieties, and reactive sites on an SiOx background, where x ranges from approximately 1 to approximately 2. Exemplary non-polymeric silsesquioxane materials include polyhedral oligomeric silsesquioxanes having acid labile side groups linked to hydrophilic groups Exemplary acid labile side groups may include tertiary alkyl carbonates, tertiary alkyl esters, tertiary alkyl ethers, acetals and ketals, Exemplary hydrophilic groups may include phenols, alcohols, carboxylic acids, amides, and sulfonamides.Type: GrantFiled: February 14, 2013Date of Patent: April 7, 2015Assignee: International Business Machines CorporationInventors: Martin Glodde, Wu-Song Huang, Javier Perez, Ratnam Sooriyakumaran, Takeshi Kinsho, Tsutomu Ogihara, Seiichiro Tachibana, Takafumi Ueda
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Patent number: 8999631Abstract: An undercoat agent usable in phase separation of a layer formed on a substrate, the layer containing a block copolymer having a plurality of polymers bonded, the undercoat agent including a resin component, and 20 mol % to 80 mol % of all the structural units of the resin component being a structural unit derived from an aromatic ring-containing monomer; and a method of forming a pattern of a layer containing a block copolymer, the method including: step (1) coating the undercoat agent on a substrate (1), thereby forming a layer (2) composed of the undercoat agent, step (2) forming a layer (3) containing a block copolymer having a plurality of polymers bonded on the surface of the layer (2) composed of the undercoat agent, and subjecting the layer (3) containing the block copolymer to phase separation, and step (3) selectively removing a phase (3a) of at least one polymer of the plurality of copolymers constituting the block copolymer from the layer (3) containing the block copolymer.Type: GrantFiled: September 12, 2011Date of Patent: April 7, 2015Assignees: Tokyo Ohka Kogyo Co., Ltd., RikenInventors: Takahiro Senzaki, Takahiro Dazai, Ken Miyagi, Shigenori Fujikawa, Harumi Hayakawa, Mari Koizumi
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Publication number: 20150093708Abstract: Acid generators comprising a carbocyclic or heteroaromatic group substituted with at least one diester moiety are provided. These acid generators are particularly useful as a photoresist composition component.Type: ApplicationFiled: September 27, 2013Publication date: April 2, 2015Inventor: Paul J. LaBEAUME
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Publication number: 20150093692Abstract: There is provided a pattern forming method including: (a) forming a film by an actinic ray-sensitive or radiation-sensitive resin composition containing (A) to (C), (A) a resin capable of increasing polarity by the action of an acid to decrease solubility in a developer containing an organic solvent, (B) a compound capable of generating acid upon irradiation with an actinic ray or radiation, and (C) a salt having a conjugate base structure of an acid having a pKa of ?2 or more in a molecule thereof and substantially not capable of decomposing by an actinic ray or radiation, (b) exposing the film, and (c) developing the exposed film using a developer containing an organic solvent to form a negative pattern.Type: ApplicationFiled: December 11, 2014Publication date: April 2, 2015Applicant: FUJIFILM CORPORATIONInventor: Shuhei YAMAGUCHI
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Publication number: 20150093704Abstract: A radiation-sensitive resin composition includes (A) a block copolymer, and (B) an acid-generating agent. The block copolymer (A) includes a polymer block (I), a polymer block (II), and a moiety contained in the polymer block (I), the polymer block (2), or both thereof. The polymer block (I) includes an acid-dissociable group. The polymer block (II) includes an alkali-dissociable group. The moiety provides water repellency.Type: ApplicationFiled: September 26, 2014Publication date: April 2, 2015Applicant: JSR CORPORATIONInventor: Hitoshi OSAKI
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Publication number: 20150093691Abstract: According to one embodiment, an actinic-ray- or radiation-sensitive resin composition includes compound (A) that when exposed to actinic rays or radiation, generates acids and resin (B) that when acted on by an acid, is decomposed to thereby increase its solubility in an alkali developer. Compound (A) is expressed by general formula (I) below. Resin (B) contains at least one of repeating units of general formula (1) below.Type: ApplicationFiled: December 3, 2014Publication date: April 2, 2015Applicant: FUJIFILM CORPORATIONInventor: Akinori SHIBUYA