Binder Containing Patents (Class 430/905)
  • Patent number: 8703383
    Abstract: A copolymer has formula: wherein R1-R5 are independently H, C1-6 alkyl, or C4-6 aryl, R6 is a fluorinated or non-fluorinated C5-30 acid decomposable group; each Ar is a monocyclic, polycyclic, or fused polycyclic C6-20 aryl group; each R7 and R8 is —OR11 or —C(CF3)2OR11 where each R11 is H, a fluorinated or non-fluorinated C5-30 acid decomposable group, or a combination; each R9 is independently F, a C1-10 alkyl, C1-10 fluoroalkyl, C1-10 alkoxy, or a C1-10 fluoroalkoxy group; R10 is a cation-bound C10-40 photoacid generator-containing group, mole fractions a, b, and d are 0 to 0.80, c is 0.01 to 0.80, e is 0 to 0.50 provided where a, b, and d are 0, e is greater than 0, the sum a+b+c+d+e is 1, l and m are integers of 1 to 4, and n is an integer of 0 to 5. A photoresist and coated substrate, each include the copolymer.
    Type: Grant
    Filed: November 17, 2011
    Date of Patent: April 22, 2014
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: James W. Thackeray, Emad Aqad, Su Jin Kang, Owendi Ongayi
  • Patent number: 8685620
    Abstract: A resist composition including a base component (A) which exhibits changed solubility in a developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) containing a polymeric compound (A1) having a structural unit (a5) represented by general formula (a5-0) shown below (R1 represents a sulfur atom or an oxygen atom; R2 represents a single bond or a divalent linking group; and Y represents an aromatic hydrocarbon group or an aliphatic hydrocarbon group having a polycyclic group, provided that the aromatic hydrocarbon group or the aliphatic hydrocarbon may have a carbon atom or a hydrogen atom thereof substituted with a substituent.
    Type: Grant
    Filed: November 6, 2012
    Date of Patent: April 1, 2014
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Daichi Takaki, Daiju Shiono, Yoshiyuki Utsumi, Takaaki Kaiho
  • Patent number: 8685616
    Abstract: The present invention provides photoacid generators for use in chemically amplified resists and lithographic processes using the same.
    Type: Grant
    Filed: June 10, 2009
    Date of Patent: April 1, 2014
    Assignee: University Of North Carolina At Charlotte
    Inventors: Kenneth E. Gonsalves, Mingxing Wang
  • Patent number: 8679724
    Abstract: A positive resist composition comprises: (A) a resin of which solubility in an alkali developer increases under an action of an acid; (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (C) a resin having at least one of a fluorine atom and a silicon atom; and (D) a solvent; and a pattern forming method using the positive resist composition.
    Type: Grant
    Filed: December 11, 2006
    Date of Patent: March 25, 2014
    Assignee: FUJIFILM Corporation
    Inventors: Hiromi Kanda, Shinichi Kanna
  • Patent number: 8658344
    Abstract: A resist material and methods using the resist material are disclosed herein. An exemplary method includes forming a resist layer over a substrate, wherein the resist layer includes a polymer, a photoacid generator, an electron acceptor, and a photodegradable base; performing an exposure process that exposes portions of the resist layer with radiation, wherein the photodegradable base is depleted in the exposed portions of the resist layer during the exposure process; and performing an developing process on the resist layer.
    Type: Grant
    Filed: June 27, 2012
    Date of Patent: February 25, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chien-Wei Wang, Ching-Yu Chang, Tsai-Sheng Gau, Burn Jeng Lin
  • Patent number: 8652751
    Abstract: A resist composition, which contains: a silicon compound having at least an alkyl-soluble group which may be substituted with a substituent; and a resin having an alkali-soluble group which may be substituted with an acid labile group, wherein the resist composition is designed to be subjected to immersion lithography.
    Type: Grant
    Filed: September 10, 2009
    Date of Patent: February 18, 2014
    Assignee: Fujitsu Limited
    Inventors: Miwa Kozawa, Koji Nozaki
  • Patent number: 8642253
    Abstract: To provide a resist composition for negative tone development, which can form a pattern having a good profile improved in the pattern undercut and moreover, can reduce the line edge roughness and enhance the in-plane uniformity of the pattern dimension, and a pattern forming method using the same. A resist composition for negative tone development, comprising (A) a resin capable of increasing the polarity by the action of an acid to increase the solubility in a positive tone developer and decrease the solubility in a negative tone developer, (B) a compound capable of generating an acid having an acid dissociation index pKa of ?4.0 or less upon irradiation with an actinic ray or radiation, and (C) a solvent; and a pattern forming method using the same.
    Type: Grant
    Filed: November 8, 2010
    Date of Patent: February 4, 2014
    Assignee: FUJIFILM Incorporated
    Inventor: Hideaki Tsubaki
  • Patent number: 8642245
    Abstract: According to one embodiment, an actinic-ray- or radiation-sensitive resin composition includes a resin that is decomposed when acted on by an acid to thereby increase its solubility in an alkali developer, a compound that generates an acid when exposed to actinic rays or radiation, and any of basic compounds of general formula (1) below.
    Type: Grant
    Filed: March 15, 2012
    Date of Patent: February 4, 2014
    Assignee: FUJIFILM Corporation
    Inventors: Kana Fujii, Tomotaka Tsuchimura, Toru Fujimori, Hidenori Takahashi, Takayuki Ito
  • Patent number: 8637220
    Abstract: An actinic ray-sensitive or radiation-sensitive resin composition comprising (A) a guanidine compound having a logP value of 1.2 or more, and (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation.
    Type: Grant
    Filed: June 29, 2011
    Date of Patent: January 28, 2014
    Assignee: FUJIFILM Corporation
    Inventors: Tomotaka Tsuchimura, Hideaki Tsubaki, Toshiya Takahashi
  • Patent number: 8632939
    Abstract: A polymer comprising recurring units having a fluorinated carboxylic acid onium salt structure on a side chain is used to formulate a chemically amplified positive resist composition. When the composition is processed by lithography to form a positive pattern, the diffusion of acid in the resist film is uniform and slow, and the pattern is improved in LER.
    Type: Grant
    Filed: February 25, 2011
    Date of Patent: January 21, 2014
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Keiichi Masunaga, Satoshi Watanabe, Jun Hatakeyama, Youichi Ohsawa, Daisuke Domon
  • Patent number: 8632946
    Abstract: Provided is a positive photoresist composition containing a cresol novolac resin (A) manufactured using m-cresol, p-cresol, and formaldehyde as essential raw materials and a novolac phenolic resin (B) manufactured using o-cresol, resorcinol, and formaldehyde as essential raw materials. This positive photoresist composition has high sensitivity and high heat resistance at the same time, which have so far been difficult to achieve at the same time, at a higher level and is suitable for use as a resist in, for example, the manufacture of semiconductor devices such as ICs and LSIs, which have required formation of finer patterns with the increasing packing density in recent years, the manufacture of displays such as LCDs, and the manufacture of printing plates.
    Type: Grant
    Filed: October 25, 2011
    Date of Patent: January 21, 2014
    Assignee: DIC Corporation
    Inventors: Takakazu Kage, Norifumi Imaizumi
  • Patent number: 8623585
    Abstract: Provided is a positive photoresist composition containing, as an essential component, a novolac phenolic resin (C) prepared by condensing an aromatic compound (A) represented by general formula (1) or (2) with an aliphatic aldehyde (B). This positive photoresist composition has high sensitivity and high heat resistance at the same time, and is suitable for use as a positive photoresist in, for example, the manufacture of semiconductor devices such as ICs and LSIs, the manufacture of displays such as LCDs, and the manufacture of printing plates. (In the formulas, R1, R2, and R3 are each independently an alkyl group having 1 to 8 carbon atoms; m, n, and p are each independently an integer of 0 to 4; q is an integer of 1 to (5?p); and s is an integer of 1 to (9?p).
    Type: Grant
    Filed: October 25, 2011
    Date of Patent: January 7, 2014
    Assignee: DIC Corporation
    Inventors: Tomoyuki Imada, Takakazu Kage, Norifumi Imaizumi
  • Patent number: 8617786
    Abstract: The present invention relates to compositions comprising poly-oxycarbosilane and methods for using the compositions in step and flash imprint lithography. The imprinting compositions comprise a poly-oxycarbosilane polymer, a silanol, a reaction initiator and optionally a pore generator.
    Type: Grant
    Filed: February 11, 2011
    Date of Patent: December 31, 2013
    Assignee: International Business Machines Corporation
    Inventors: Richard Anthony Dipietro, Geraud Jean-Michel Dubois, Robert Dennis Miller, Ratnam Sooriyakumaran
  • Patent number: 8613999
    Abstract: A laser-engraveable composition comprises a laser-engraveable resin having dispersed therein non-crosslinked organic porous particles. These non-crosslinked organic porous particles have a non-crosslinked organic solid phase including an external particle surface and at least one set of discrete pores that are dispersed within the non-crosslinked organic solid phase. The laser-engraveable composition further comprises an infrared radiation absorber within at least some of the non-crosslinked organic porous particles.
    Type: Grant
    Filed: July 28, 2011
    Date of Patent: December 24, 2013
    Assignee: Eastman Kodak Company
    Inventors: Christine Joanne Landry-Coltrain, Mridula Nair
  • Patent number: 8609317
    Abstract: A salt represented by the formula (I—Pb): wherein Xpb represents a single bond or —O—, Rpb represents a single bond etc., Ypb represents a polymerizable group, Zpb represents an organic group, Xpc represents a single bond or a C1-C4 alkylene group, and Rpc represents a C1-C10 aliphatic hydrocarbon group which can have one or more substituents etc.
    Type: Grant
    Filed: July 9, 2010
    Date of Patent: December 17, 2013
    Assignee: Sumitomo Chemical Company, Limited
    Inventors: Koji Ichikawa, Masako Sugihara, Yuko Yamashita
  • Patent number: 8609319
    Abstract: A radiation-sensitive resin composition that includes (A) a polymer that includes a repeating unit (a1) and a fluorine atom, the repeating unit (a1) including a group shown by the following formula (1) or (2), the radiation-sensitive resin composition including the polymer (A) in an amount of 0.1 mass % or more and less than 20 mass % based on the total amount of polymers included in the radiation-sensitive resin composition.
    Type: Grant
    Filed: September 23, 2011
    Date of Patent: December 17, 2013
    Assignee: JSR Corporation
    Inventors: Toru Kimura, Hiromitsu Nakashima, Reiko Kimura, Kazuki Kasahara, Masafumi Hori, Masafumi Yoshida
  • Patent number: 8603732
    Abstract: There is disclosed a resist underlayer film-forming composition comprising, at least: a resin (A) obtained by condensing a compound represented by the following general formula (1) with a compound represented by the following general formula (2) by the aid of an acid catalyst; a compound (B) represented by the general formula (1); a fullerene compound (C); and an organic solvent. There can be a resist underlayer film composition in a multi-layer resist film to be used in lithography, which underlayer film is excellent in property for filling up a height difference of a substrate, possesses a solvent resistance, and is not only capable of preventing occurrence of twisting during etching of a substrate, but also capable of providing an excellently decreased pattern roughness; a process for forming a resist underlayer film by using the composition; and a patterning process.
    Type: Grant
    Filed: December 27, 2010
    Date of Patent: December 10, 2013
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Tsutomu Ogihara, Takeru Watanabe, Takeshi Kinsho, Katsuya Takemura, Toshihiko Fujii, Daisuke Kori
  • Patent number: 8597867
    Abstract: A radiation-sensitive resin composition excelling in basic properties as a resist such as sensitivity, resolution, and the like, having a wide depth of focus (DOF) to both a line-and-space pattern and an isolated space pattern, and exhibiting a minimal line width change due to fluctuation of a bake temperature, and having a small line width limit in which the line pattern destroying phenomenon does not occur, and a lactone-containing copolymer useful as a resin component of the composition are provided. The lactone-containing copolymer is represented by a copolymer of the following compounds (1-1), (2-1), and (3-1). The radiation-sensitive resin composition comprises (a) the lactone-containing copolymer and (b) a photoacid generator.
    Type: Grant
    Filed: May 2, 2005
    Date of Patent: December 3, 2013
    Assignee: JSR Corporation
    Inventors: Hiromitsu Nakashima, Tomohiro Utaka, Takashi Chiba, Eiji Yoneda, Atsushi Nakamura
  • Patent number: 8592130
    Abstract: A photosensitive resin composition comprising: (A) a binder polymer having a divalent group represented by formula (I), (II) and (III); (B) a photopolymerizing compound; and (C) a photopolymerization initiator. [In formulas (I), (II) and (III), R1, R2, R4 each independently represents a hydrogen atom or a methyl group, R3 is C1-C3 alkyl group, etc., m is an integer of 0-5, R5, R6 and R7 each independently represents a hydrogen atom or a C1-C5 alkyl group, and at least two among R5, R6 and R7 are C1-C5 alkyl groups.
    Type: Grant
    Filed: May 22, 2009
    Date of Patent: November 26, 2013
    Assignee: Hitachi Chemical Company, Ltd.
    Inventors: Masahiro Miyasaka, Yukiko Muramatsu
  • Patent number: 8592131
    Abstract: An ortho-nitrobenzyl ester compound including a compound represented by Chemical Formula 1, and a positive photosensitive resin composition including the same are provided.
    Type: Grant
    Filed: September 22, 2011
    Date of Patent: November 26, 2013
    Assignee: Cheil Industries Inc.
    Inventors: Min-Kook Chung, Ji-Young Jeong, Hyun-Yong Cho, Yong-Sik Yoo, Jeong-Woo Lee, Jong-Hwa Lee, Hwan-Sung Cheon, Soo-Young Kim, Young-Ho Kim, Jae-Hyun Kim, Su-Min Park
  • Patent number: 8592133
    Abstract: The present invention relates to: a resist composition such as a chemically amplified resist composition for providing an excellent pattern profile even at a substrate-side boundary face of resist, in addition to a higher resolution in photolithography for micro-fabrication, and particularly in photolithography adopting, as an exposure source, KrF laser, ArF laser, F2 laser, ultra-short ultraviolet light, electron beam, X-rays, or the like; and a patterning process utilizing the resist composition. The present invention provides a chemically amplified resist composition comprising one or more kinds of amine compounds or amine oxide compounds (except for those having a nitrogen atom of amine or amine oxide included in a ring structure of an aromatic ring) at least having a carboxyl group and having no hydrogen atoms covalently bonded to a nitrogen atom as a basic center.
    Type: Grant
    Filed: March 22, 2012
    Date of Patent: November 26, 2013
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Satoshi Watanabe, Akinobu Tanaka, Takeru Watanabe, Takeshi Kinsho
  • Patent number: 8586283
    Abstract: A curable liquid formulation containing at least (i) one or more near-infrared absorbing triphenylamine-based dyes, and (ii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.
    Type: Grant
    Filed: September 10, 2012
    Date of Patent: November 19, 2013
    Assignee: International Business Machines Corporation
    Inventors: Martin Glodde, Dario L. Goldfarb, Wu-Song Huang, Wai-Kin Li, Sen Liu, Pushkara R. Varanasi, Libor Vyklicky
  • Patent number: 8580477
    Abstract: Embodiments in accordance with the present invention encompass negative-tone, aqueous base developable, self-imageable polymer compositions useful for forming films that can be patterned to create structures for microelectronic devices, microelectronic packaging, microelectromechanical systems, optoelectronic devices and displays.
    Type: Grant
    Filed: September 21, 2009
    Date of Patent: November 12, 2013
    Assignee: Promerus LLC
    Inventors: Brian Knapp, Edmund Elce, Andrew Bell, Cheryl Burns, Sridevi Kaiti, Brian Kocher, Hendra Ng, Yogesh Patel, Masanobu Sakamoto, Xiaoming Wu, Linda Zhang
  • Patent number: 8574809
    Abstract: The present invention provides a positive resist composition capable of forming a resist pattern with high resolution, and a method of forming a resist pattern. This composition is a positive resist composition including a resin component (A) which exhibits increased solubility in an alkali developing solution under action of acid, and an acid-generator component (B) which generates acid upon irradiation, the resin component (A) containing a polymer including: a core portion represented by general formula (1) [Chemical Formula 1] PX—Y)a ??(1) wherein P represents an a-valent organic group; a represents an integer of 2 to 20; Y represents an arylene group or an alkylene group of 1 to 12 carbon atoms; and X represents a specific linking group which can be cleaved under action of acid, and arm portions that are bonded to the core portion and are also composed of a polymer chain obtained by an anionic polymerization method.
    Type: Grant
    Filed: August 26, 2009
    Date of Patent: November 5, 2013
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Takeyoshi Mimura, Jun Iwashita
  • Patent number: 8574816
    Abstract: The invention provides a positive resist composition comprising, as base resins contained therein, (A) a polymer having a weight-average molecular weight of 1000 to 500000 and containing a repeating unit which contains a structure having a hydrogen atom of a carboxyl group thereof substituted with an acid-labile group having a cyclic structure and (B) a novolak resin of a substituted or an unsubstituted naphtholphthalein, and in addition, a photo acid generator. There can be provided a positive resist composition having an appropriate absorption to form a pattern on a highly reflective substrate, excellent characteristics in adhesion and implantation onto a non-planar substrate, a good pattern profile after light exposure, and an ion implantation resistance at the time of ion implantation; and a patterning process.
    Type: Grant
    Filed: August 13, 2012
    Date of Patent: November 5, 2013
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Jun Hatakeyama, Daisuke Kori
  • Patent number: 8574817
    Abstract: A positive resist composition comprising a polymer having carboxyl groups substituted with an acid labile group having formula (1), (2) or (3) exhibits a high contrast of alkaline dissolution rate before and after exposure, a high resolution, a reduced acid diffusion rate, and forms a pattern with good profile, minimal edge roughness, and etch resistance. In formula (1), R1, R2, R5, R6, R8, and R9 are alkyl, aryl, or alkenyl, R3, R4, R7, R10, and R11 are hydrogen, alkyl, alkoxy, acyloxy, halogen, cyano, nitro, hydroxyl or trifluoromethyl, M is methylene or ethylene, R is a single bond or linking group.
    Type: Grant
    Filed: September 13, 2012
    Date of Patent: November 5, 2013
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Jun Hatakeyama, Koji Hasegawa
  • Patent number: 8546060
    Abstract: A chemically amplified positive resist composition is provided comprising a polymer PB having an amine structure bound thereto and a polymer PA comprising recurring units having an acidic side chain protected with an acid labile protective group and recurring units having an acid generating moiety on a side chain.
    Type: Grant
    Filed: February 15, 2011
    Date of Patent: October 1, 2013
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Keiichi Masunaga, Satoshi Watanabe, Akinobu Tanaka, Daisuke Domon
  • Patent number: 8546070
    Abstract: A color photographic element has a reflective support and a blue light sensitive color record, a green light sensitive color record, and a red light sensitive color record can be used to provide color photographic prints. The element also has a non-light sensitive interlayer between the green light and red light sensitive color records. This interlayer comprises a hydrophilic colloid and an acrylic latex polymer having a glass transition temperature (Tg) of less than 0° C. The presence of this acrylic latex polymer in the interlayer reduces the formation of a cyan line defect when the color photographic print is folded or creased, such as in photobooks.
    Type: Grant
    Filed: October 15, 2012
    Date of Patent: October 1, 2013
    Assignee: Eastman Kodak Company
    Inventors: Jess B. Hendricks, III, Paul L. Zengerle, Andrew D. Church, Darrell B. Austin
  • Patent number: 8546061
    Abstract: A photo-curing polysiloxane composition includes a polysiloxane, an o-naphthoquinonediazidesulfonate compound, and a solvent. The polysiloxane contains 25 wt % to 60 wt % of a polysiloxane fraction having a molecular weight ranging from 10,000 to 80,000 based on a total weight of the polysiloxane when calculated from an integral molecular weight distribution curve obtained by plotting cumulative weight percentage versus molecular weight falling within a range between 400 and 100,000 measured by gel permeation chromatography. The amount of oligomers in the polysiloxane having a molecular weight less than 800 is from 0 wt % to 10 wt % based on a total weight of the photo-curing polysiloxane composition. A protective film formed from the photo-curing polysiloxane composition and an element containing the protective film are also disclosed.
    Type: Grant
    Filed: November 8, 2011
    Date of Patent: October 1, 2013
    Assignee: Chi Mei Corporation
    Inventors: Ming-Ju Wu, Chun-An Shih
  • Patent number: 8507177
    Abstract: A material for use in lithography processing includes a polymer that turns soluble to a base solution in response to reaction with acid and a plurality of magnetically amplified generators (MAGs) each having a magnetic element and each decomposing to form acid bonded with the magnetic element in response to radiation energy.
    Type: Grant
    Filed: March 17, 2011
    Date of Patent: August 13, 2013
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsien-Cheng Wang, Chin-Hsiang Lin, Heng-Jen Lee, Ching-Yu Chang, Hua-Tai Lin, Burn Jeng Lin
  • Patent number: 8507174
    Abstract: A positive resist composition comprising (A) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (B) a resin capable of increasing the solubility in an alkali developer by the action of an acid, and (C) a compound having a specific structure, which decomposes by the action of an acid to generate an acid, a pattern forming method using the positive resist composition, and a compound for use in the positive resist composition are provided as a positive resist composition exhibiting good performance in terms of pattern profile, line edge roughness, pattern collapse, sensitivity and resolution in normal exposure (dry exposure), immersion exposure and double exposure, a pattern forming method using the positive resist composition and a compound for use in the positive resist composition.
    Type: Grant
    Filed: August 11, 2008
    Date of Patent: August 13, 2013
    Assignee: FUJIFILM Corporation
    Inventors: Hidenori Takahashi, Kenji Wada, Sou Kamimura
  • Patent number: 8501384
    Abstract: A positive resist composition comprising a polymer having a tetrahydrobenzocycloheptane-substituted secondary or tertiary carboxyl group ester as an acid labile group exhibits a high contrast of alkaline dissolution rate before and after exposure, a high resolution, a good pattern profile and minimal edge roughness after exposure, a significant effect of suppressing acid diffusion rate, and improved etching resistance.
    Type: Grant
    Filed: January 7, 2011
    Date of Patent: August 6, 2013
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Jun Hatakeyama, Takeru Watanabe, Seiichiro Tachibana
  • Patent number: 8501392
    Abstract: A photosensitive element comprises a support, a photosensitive layer and a protective film laminated in that order, wherein the photosensitive layer is composed of a photosensitive resin composition containing a binder polymer, a photopolymerizing compound, a photopolymerization initiator and a compound with a maximum absorption wavelength of 370-420 nm, and the protective film is composed mainly of polypropylene.
    Type: Grant
    Filed: April 13, 2007
    Date of Patent: August 6, 2013
    Assignee: Hitachi Chemical Company, Ltd.
    Inventors: Manabu Saitou, Junichi Iso, Tatsuya Ichikawa, Takeshi Ohashi, Hanako Yori, Masahiro Miyasaka, Takashi Kumaki
  • Patent number: 8497053
    Abstract: The present invention relates to a pigment dispersion composition that is capable of decreasing pattern residues and improving resolution, a resist composition for a color filter including the same, and a color filter fabricated using the same. More particularly, the pigment dispersion composition includes a pigment, a binder resin, a solvent, and a first dispersing agent and a second dispersing agent each represented by a predetermined chemical formula.
    Type: Grant
    Filed: March 11, 2010
    Date of Patent: July 30, 2013
    Assignee: Cheil Industries Inc.
    Inventors: Chang-Min Lee, Kil-Sung Lee, Jae-Hyun Kim, Eui-June Jeong
  • Patent number: 8492070
    Abstract: A photocurable and thermosetting composition comprises (A) a carboxyl group-containing resin having at least one carboxyl group in its molecule, (B) a photopolymerization initiator having an oxime linkage represented by the following general formula (I), (C) a reactive diluent, and (D) an epoxy compound having two or more epoxy groups in its molecule. The above-mentioned photopolymerization initiator (B) is incorporated into a formulation which is different from at least a formulation into which the above-mentioned carboxyl group-containing resin (A) and the above-mentioned reactive diluent (C) are incorporated to formulate a system comprising at least two parts.
    Type: Grant
    Filed: July 27, 2012
    Date of Patent: July 23, 2013
    Assignee: Taiyo Ink Manufacturing Co., Ltd.
    Inventors: Hideaki Kojima, Hidekazu Miyabe, Shouji Minegishi, Naoki Yoneda, Yoshitaka Hirai
  • Patent number: 8481243
    Abstract: The present invention provides a resin comprising a structural unit represented by the formula (aa): wherein R1 represents a C1-C6 alkyl group optionally having one or more halogen atoms, a hydrogen atom or a halogen atom, T1 represents a C4-C34 sultone ring group optionally having one or more substituents, Z1 represents a C1-C6 alkanediyl group optionally having one or more substituents, or a group represented by the formula (a-1): -A10X10-A11sX11-A12-??(a-1) wherein X10 and X11 each independently represents —O—, —NH—, —CO—, —CO—O—, —O—CO—, —CO—NH— or —NH—CO—, A10, A11 and A12 each independently represent a C1-C5 divalent aliphatic hydrocarbon group optionally having one or more substituents, and s represents 0 or 1, and Z2 represents a single bond or —CO—.
    Type: Grant
    Filed: January 9, 2012
    Date of Patent: July 9, 2013
    Assignee: Sumitomo Chemical Company, Limited
    Inventors: Hyungjoo Kim, Akira Kamabuchi, Koji Ichikawa
  • Patent number: 8470511
    Abstract: A chemically amplified negative resist composition is provided comprising (A) an alkali-soluble polymer, (B) an acid generator, and (C) a nitrogen-containing compound as a basic component, the polymer (A) turning alkali insoluble under the catalysis of acid. A basic polymer having a secondary or tertiary amine structure on a side chain serves as components (A) and (C). Processing the negative resist composition by EB or EUV lithography process may form a fine size resist pattern with advantages including uniform diffusion of base, improved LER, controlled deactivation of acid at the substrate interface, and a reduced degree of undercut.
    Type: Grant
    Filed: February 15, 2011
    Date of Patent: June 25, 2013
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Keiichi Masunaga, Satoshi Watanabe, Akinobu Tanaka, Daisuke Domon
  • Patent number: 8450041
    Abstract: An actinic ray-sensitive or radiation-sensitive resin composition includes (A) a compound capable of generating a specific acid having a norbornyl structure upon irradiation with an actinic ray or radiation, and (B) a resin capable of increasing the dissolution rate of the resin (B) in an alkali developer by an action of an acid, the resin (B) containing a specific repeating unit having a lactone structure on the resin side chain through a linking group, and a pattern forming method uses the composition.
    Type: Grant
    Filed: January 15, 2010
    Date of Patent: May 28, 2013
    Assignee: FUJIFILM Corporation
    Inventor: Shuhei Yamaguchi
  • Patent number: 8445177
    Abstract: A photosensitive adhesive composition comprising: (A) a polyimide having a carboxyl group as a side chain, whereof the acid value is 80 to 180 mg/KOH; (B) a photo-polymerizable compound; and (C) a photopolymerization initiator.
    Type: Grant
    Filed: November 19, 2010
    Date of Patent: May 21, 2013
    Assignee: Hitachi Chemical Company, Ltd.
    Inventors: Takashi Kawamori, Takashi Masuko, Shigeki Katogi, Masaaki Yasuda
  • Patent number: 8440384
    Abstract: A compound has a partial structure shown by a following formula (1), wherein R1 represents a hydrogen atom or a substituted or unsubstituted hydrocarbon group having 1 to 8 carbon atoms, R2 represents a substituted or unsubstituted hydrocarbon group having 1 to 8 carbon atoms, Rf represents a fluorine atom or a perfluoroalkyl group having 1 to 4 carbon atoms, L represents an integer from 0 to 4, n represents an integer from 0 to 10, and m represents an integer from 1 to 4.
    Type: Grant
    Filed: April 14, 2010
    Date of Patent: May 14, 2013
    Assignee: JSR Corporation
    Inventors: Takuma Ebata, Tomoki Nagai
  • Patent number: 8426109
    Abstract: A positive type resist composition for use in liquid immersion exposure comprises: (A) a resin having a monocyclic or polycyclic cycloaliphatic hydrocarbon structure, the resin increasing its solubility in an alkali developer by an action of acid; (B) a compound generating acid upon irradiation with one of an actinic ray and a radiation; (C) an alkali soluble compound having an alkyl group of 5 or more carbon atoms; and (D) a solvent.
    Type: Grant
    Filed: September 8, 2011
    Date of Patent: April 23, 2013
    Assignee: FUJIFILM Corporation
    Inventors: Hiromi Kanda, Haruki Inabe
  • Patent number: 8426113
    Abstract: The present invention provides chemically amplified silsesquioxane polymers for preparing masks using e-beam lithography. The silsesquioxane polymers have reactive sidechains that in the presence of an acid undergo acid catalyzed rearrangement to generate reactive functionalities that crosslink to form Si—O—Si bonds. The reactive side-chains comprise ?- and ?-substituted alkyl groups bound to the silicon of the silsesquioxane polymer. The substituent of the ?- and ?-substituted alkyl group is an electron withdrawing group. Resists generated with the chemically amplified silsesquioxane polymers of the present invention and imaged with e-beams have resolution of ?60 nm line/space.
    Type: Grant
    Filed: August 13, 2010
    Date of Patent: April 23, 2013
    Assignee: International Business Machines Corporation
    Inventors: Luisa Dominica Bozano, Blake W. Davis, Alshakim Nelson, Jitendra Singh Rathore, Linda Karin Sundberg
  • Patent number: 8426110
    Abstract: A chemically amplified positive resist composition comprises an acid-decomposable keto ester compound of steroid skeleton which is insoluble in alkaline developer, but turns soluble in alkaline developer under the action of acid. The composition is exposed to EB, deep-UV or EUV and developed to form a pattern with a high resolution and improved LER.
    Type: Grant
    Filed: January 31, 2012
    Date of Patent: April 23, 2013
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Takeru Watanabe, Tomohiro Kobayashi, Katsuya Takemura, Jun Hatakeyama
  • Patent number: 8426103
    Abstract: A positive resist composition for use with electron beam, X-ray or EUV and a pattern forming method using the positive resist composition are provided, the positive resist composition including: (A) a resin capable of decomposing under an action of an acid to increase a dissolution rate in an aqueous alkali solution; (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (C) a basic compound; and (D) an organic solvent, wherein the entire solid content concentration in the resist composition is from 1.0 to 4.5 mass % and a ratio of (B) the compound capable of generating an acid upon irradiation with actinic rays or radiation is from 10 to 50 mass % based on the entire solid content.
    Type: Grant
    Filed: February 12, 2009
    Date of Patent: April 23, 2013
    Assignee: FUJIFILM Corporation
    Inventor: Katsuhiro Yamashita
  • Patent number: 8426108
    Abstract: A chemically amplified positive resist composition for EB or EUV lithography is provided comprising (A) a polymer or a blend of polymers wherein a film of the polymer or polymer blend is insoluble in alkaline developer, but turns soluble under the action of acid, (B) an acid generator, (C) a basic compound, and (D) a solvent. The basic compound (C) is a polymer comprising recurring units bearing a side chain having a secondary or tertiary amine structure as a basic active site and constitutes a part or the entirety of the polymer or polymers as component (A).
    Type: Grant
    Filed: February 15, 2011
    Date of Patent: April 23, 2013
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Keiichi Masunaga, Satoshi Watanabe, Akinobu Tanaka, Daisuke Domon
  • Patent number: 8420293
    Abstract: Embodiments in accordance with the present invention provide waveguide structures and methods of forming such structures where core and laterally adjacent cladding regions are defined. Some embodiments of the present invention provide waveguide structures where core regions are collectively surrounded by laterally adjacent cladding regions and cladding layers and methods of forming such structures.
    Type: Grant
    Filed: August 10, 2011
    Date of Patent: April 16, 2013
    Assignees: Sumitomo Bakelite Co., Ltd., Promerus, LLC
    Inventors: Koji Choki, Tetsuya Mori, Ramakrishna Ravikiran, Makoto Fujiwara, Keizo Takahama, Kei Watanabe, Hirotaka Nonaka, Yumiko Otake, Andrew Bell, Larry Rhodes, Dino Amoroso, Mutsuhiro Matsuyama
  • Patent number: 8420289
    Abstract: An aromatic ring-containing polymer, a polymer mixture, an antireflective hardmask composition, and a method for patterning a material on a substrate, the aromatic ring-containing polymer including at least one aromatic ring-containing polymer represented by Formulae 1, 2, or 3.
    Type: Grant
    Filed: October 1, 2009
    Date of Patent: April 16, 2013
    Assignee: Cheil Industries, Inc.
    Inventors: Min Soo Kim, Dong Seon Uh, Chang Il Oh, Kyong Ho Yoon, Kyung Hee Hyung, Jin Kuk Lee, Jong-Seob Kim, Hwan Sung Cheon, Irina Nam, Nataliya Tokareva
  • Patent number: 8409782
    Abstract: A photoresist composition is provided. The photoresist composition comprises two or more kinds of photoinitiators having different activation wavelengths whose difference is at least 20 nm. The photoresist composition has high sensitivity and forms a pattern whose thickness is easy to control depending on the exposure intensity through a slit or transflective mask. Further provided are a transparent thin film formed using the photoresist composition and a liquid crystal display device comprising the thin film.
    Type: Grant
    Filed: June 22, 2009
    Date of Patent: April 2, 2013
    Assignee: LG Chem, Ltd
    Inventors: Keon Woo Lee, Sung Hyun Kim, Sang Kyu Kwak, Dong Kung Oh, Chang Soon Lee, Chang Ho Cho, Kyoung Hoon Min
  • Patent number: 8389201
    Abstract: The present invention relates to a positive resist composition and to a pattern forming process using the same. The present invention provides: a positive resist composition having an enhanced etching resistance and an excellent resolution and being capable of providing an excellent pattern profile even at a substrate-side boundary face of resist, in photolithography for fine processing, and particularly in lithography adopting, as an exposure source, KrF laser, extreme ultraviolet rays, electron beam, X-rays, or the like; and a pattern forming process utilizing the positive resist composition.
    Type: Grant
    Filed: May 24, 2010
    Date of Patent: March 5, 2013
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Akinobu Tanaka, Keiichi Masunaga, Daisuke Domon, Satoshi Watanabe
  • Patent number: 8389197
    Abstract: The present invention provides a positive resist composition and a resist pattern forming method that are capable of forming a resist pattern with a reduced level of roughness. The positive resist composition includes the compound represented by the general formula (I) below. The present invention also provides the resist pattern forming method using the positive resist composition above. [wherein, in formula (I), R11 and R12 each represents, independently, an alkyl group of 1 to 10 carbon atoms or an aromatic hydrocarbon group, and may include a hetero atom in the structure thereof; R21 to R24 each represents, independently, a hydrogen atom or an acid dissociable, dissolution inhibiting group, and two of the R21 to R24 represents a hydrogen atom and the others represents an acid dissociable, dissolution inhibiting group; X is a group represented by general formulas (Ia) or (Ib) below].
    Type: Grant
    Filed: June 30, 2006
    Date of Patent: March 5, 2013
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Takako Hirosaki, Daiju Shiono, Taku Hirayama, Hideo Hada