Abstract: The hotplate for a workpiece comprises a heatable plate which on a first side comprises a support surface for the workpiece, several lifting elements for the lifting of the workpiece relative to the support surface, wherein each lifting element is moveably arranged in such a manner that the respective lifting element can be retracted with respect to the support surface and/or extended with respect to the support surface and means for heating the plate. The means for heating comprise at least one heating channel which extends on a second side of the plate located opposite the support surface and is filled with a heating fluid. The heating fluid is in contact with the plate. The lifting elements are loaded with the heating fluid in such a manner that the lifting elements are extendable through a predetermined change of the hydrostatic pressure of the heating fluid.

Abstract: An apparatus for supporting a workpiece during heat-treating includes a support plate having a non-planar upper surface, and a support system. The support system is configured to support the workpiece above the support plate during heat-treating of the workpiece, such that a lower surface of an initial shape of the workpiece is supported at a non-uniform spacing above the non-planar upper surface of the support plate, said non-uniform spacing including an edge gap beneath an outer perimeter of the workpiece, and a central gap at a central axis of the workpiece.

Abstract: The invention aims to provide substrate treatment equipment that can automatically collect a substrate in a normal condition without needing manual operation. The equipment includes a substrate holder 26 for holding substrates 12 in a multistage manner and a substrate transfer unit 34 for transferring the substrates 12 into the substrate holder 26, wherein a substrate holding condition of the substrate holder 26 is sensed by a sensing section 60. The sensing section 60 has photo-sensors 64a, 64b, and sensing waveforms sensed by the photo-sensors 64a, 64b are compared with a normal waveform. A control section 66 is provided, which controls a substrate transfer unit 34 such that substrates 12 other than at least a substrate 12 that was determined to be abnormal are transferred by the unit.

Abstract: The invention relates to an oven for heat treatment of a multiplicity of objects. The oven comprises a support stand, which is realized as a three-dimensional frame, an elongate heating chamber, which is arranged vertically or horizontally in a central region of the support stand, and a plurality of elongate combustion chambers, which are arranged vertically or horizontally inside the support stand. The oven additionally comprises a heating element, which is assigned to the heating chamber, and at least one fan for generating an air stream from the heating chamber to the combustion chambers. The combustion chambers are provided to receive the objects to be treated. The support stand is provided to support the heating chamber and the combustion chambers. The invention additionally relates to an oven installation having a multiplicity of such ovens.

Abstract: A rotary furnace for conditioning performs includes a heating wheel, a plurality of heating modules disposed on the heating wheel and a control device. Each heating module includes a heating chamber including at least one heating radiator adapted for irradiating the preform with infrared radiation, a holding and lifting device configured to lift or lower at least one of the preform and heating chamber so as to introduce the preform into the heating chamber and/or withdraw the preform from the heating chamber, and a temperature measurement device configured to measure a temperature of at least one of the preform and the heating chamber. The control device is configured to actuate the heating modules based on the measured temperature.

Abstract: The present invention provides a method for producing silicon by at least heating any one of raw materials for silicon production selected from a silica raw material and a carbon material; a silica raw material and silicon carbide; and silicon raw material, in a heating furnace, wherein the method comprises operating at least one of the raw materials for silicon production and a heated product in the heating furnace using a jig, and the jig comprises a non-metallic material portion having a bending strength of 100 MPa or more and a melting point higher than a melting point of silicon, and at least a portion thereof coming into contact with the raw materials for silicon production or the heated product, having a temperature of 1,000° C. or higher, is constituted of the non-metallic material portion.

Abstract: A temperature measurement apparatus for measuring a temperature profile of a substrate mounted on a rotating table, including a radiation temperature measurement unit configured to measure the temperature of plural temperature measurement areas on a surface of the rotating table in a radius direction of the rotating table by scanning the surface of the rotating table in the radius direction; a temperature map generating unit that specifies the address of the temperature measurement area based on the number of the temperature measurement areas measured by the radiation temperature measurement unit for each of the scanning operations in the radius direction of the rotating table, and the rotating speed of the rotating table, and stores the temperature in correspondence with the corresponding address in a storing unit; and a temperature data display processing unit that displays a temperature profile of the rotating table.

Abstract: In a method for heat treating a metal tube or pipe for a nuclear power plant, the tube or pipe being accommodated in a batch-type vacuum heat treatment furnace, when the tube or pipe is laid down on and is subjected to heat treatment on a plurality of metal cross beams arranged along a longitudinal direction of the tube or pipe, it is possible to suppress scratches to be formed on the outer surface of the tube or pipe and attributable to heat treatment, and to reduce the discoloration on the outer surface of the tube or pipe by holding the tube or pipe and the metal cross beams in indirect contact with each other by virtue of a heat resistant fabric having a thickness of 0.1 to 1.2 mm interposed in between.

Abstract: An apparatus for performing reactive thermal treatment of thin film photovoltaic devices includes a furnace having a tubular body surrounded by heaters and cooling devices. The apparatus includes cooled doors at ends of the furnace separated from a central portion of the furnace by baffles. The cooled doors facilitate increased convection within the furnace and improve temperature uniformity.

Abstract: The present invention is a vertical boat for heat treatment having an auxiliary supporting member removably attached to each of supporting parts of a boat body, the auxiliary supporting member on which a substrate to be treated is to be placed, in which the auxiliary supporting member has a guiding member attached to the supporting part and a substrate supporting plate on which the substrate to be treated is to be placed, a hole is formed on an upper surface of the guiding member, the substrate supporting plate is inserted and fitted into the hole of the guiding member so as to be fixed, a height position of a placing surface for the substrate to be treated is higher than a height position of the upper surface of the guiding member, the substrate supporting plate is composed of silicon carbide and the guiding member is composed of quartz.

Abstract: A method for producing carbon paper, including: 1) employing a polyacrylonitrile-based carbon fiber as a reinforcing material, a phenolic resin or epoxy resin as a bonding agent, and molding and preparing the carbon fiber into a carbon fiber blank by a dry paper-making method; and 2) stacking and putting a product obtained in step 1) into a reaction furnace for deposition process, the pressure in the reaction furnace being 1 kPa to 1 atmosphere, with methane, propene, or liquefied petroleum gas as a carbon source gas, nitrogen or argon gas as a diluent gas, the concentration of the carbon source gas being 5-100%, the gas flow rate being 0.1-5 L/min, and the temperature in the reaction furnace being controlled at between 800° C. and 1100° C., and the time of deposition process being 1-5 h.

Abstract: A method and apparatus for annealing semiconductor substrates is disclosed. The apparatus has an annealing energy source and a substrate support, with a shield member disposed between the annealing energy source and the substrate support. The shield member is a substantially flat member having a dimension larger than a substrate processed on the substrate support, with a window covering a central opening in the substantially flat member. The central opening has a gas inlet portal and a gas outlet portal, each in fluid communication with a gas inlet plenum and gas outlet plenum, respectively. A connection member is disposed around the central opening and holds the window over the central opening. Connection openings in the connection member are in fluid communication with the gas inlet plenum and gas outlet plenum, respectively, through a gas inlet conduit and a gas outlet conduit formed through the connection member.

Abstract: Wafer boat assembly for use in a loading apparatus for loading semiconductor substrates in a vertical furnace configured for batch processing, wherein the wafer boat assembly comprises a wafer boat for holding semiconductor substrates and a cover configured to substantially surround the substrates, wherein the wafer boat assembly is provided with a first wafer boat part comprising a base and a first cover part mounted thereto, said first cover part extending at least partially along a base upper perimeter; and a second wafer boat part comprising a second cover part removably provided on the first wafer boat part and configured to cooperate with the first cover part, said second cover part comprising receiving slots for receiving at least a semiconductor substrate to be processed.

Abstract: Apparatus and method for use in firing a ceramic casting core includes a saggar and a core setter insert disposed in the saggar. The core setter insert can be disposed on a refractory particulate grog bed and/or refractory supports inside the saggar on a bottom wall of the saggar. The core setter insert has a core-receiving surface, which can have an airfoil shape to receive an airfoil-shaped ceramic casting core used in casting hollow airfoil castings.

Abstract: A heat treatment apparatus and associated method are provided for heating a substrate. The apparatus includes a processing chamber containing a process space, first and second substrate supports, and first and second heating sources. The first substrate support is configured to support the substrate in a spaced relationship with the first heating source to define a heat exchange gap and to transfer heat energy through the heat exchange gap to elevate a temperature of the substrate to an offset temperature below a process target temperature. The second substrate support is configured to support the substrate in a spaced relationship with a second heating source to define a heat exchange gap between the second heating source and the substrate and to transfer heat energy through the heat exchange gap to elevate the temperature of the substrate from the offset temperature to the process target temperature in controlled increments.

Abstract: In drying of a glass substrate to which a coated film is applied, the heating and drying is conducted while feeding means 10, 18, which always moves on a lower surface of the glass substrate 6 to which the coated film is applied, abuts against the substrate, in order to solve a problem that when the lower surface of the coated film is supported for a long time, supporting traces occur and thereby quality of the glass substrate is reduced. With this configuration, traces of the pin 11, 12, 21 are less likely to occur.

Abstract: Disclosed is a heat treatment apparatus which includes a plurality of first disposing support members having an extendable elastic member to provide a first gap distance between a substrate disposing surface of a heat treatment plate and the rear surface of the substrate; a plurality of second disposing support members providing a second gap distance, which is smaller than the first gap distance, between the substrate disposing surface and the rear surface of the substrate; and a plurality of suction holes disposed at the substrate disposing surface of the heat treatment plate and sucking a space of the gap between the substrate disposing surface and the rear surface of the substrate, in which the substrate supported on the first disposing support member is sucked by the suction holes, such that the first disposing support member is contracted and the substrate is supported on the second disposing support member.

Abstract: To provide a substrate supporting/transferring tray, which can be placed on a substrate supporting part arranged in a treatment chamber in which the heat treatment is performed to a substrate, especially on a substrate supporting part having a built-in heating means for heating the substrate, and on an upper side of which, the substrate is placed. At the time of heat-treating the substrate, the substrate can be more uniformly heated, and when the heat treatment is completed, the tray can be easily removed from the substrate supporting part without waiting for the temperature of the substrate to be reduced, and can transfer the substrate to other parts from the treatment chamber in which the heat treatment is performed.

Abstract: A wafer boat for a semiconductor wafer includes vertical rods, fingers supported by the vertical rods, and plates supported by the fingers. The plate has a support surface for supporting the wafer and a recessed surface spaced from the support surface and spaced from the wafer. A plurality of holes extends from the recessed surface, and the support surface is free of holes to inhibit contamination of the wafer.

Abstract: Provided is an apparatus for manufacturing a polysilicon thin film by depositing an amorphous silicon thin film and an upper silicon dioxide substrate on a lower silicon dioxide substrate, forming a conductive thin film on the upper silicon dioxide substrate, and applying an electric field and performing Joule heating to crystallize the amorphous silicon thin film, the apparatus comprising power terminals for elastically contacting both upper ends of the conductive thin film and supplying power to the conductive thin film, and support members for elastically supporting the substrate such that the power terminals closely contact both upper ends of the conductive thin film to form a uniform electric field at the conductive thin film.

Abstract: A substrate processing apparatus reduces over-heating of a substrate transfer robot and suppresses deterioration of reliability or lifespan of the substrate transfer robot. The substrate processing apparatus includes a transfer chamber having a substrate transferred thereinto under a negative pressure; a process chamber connected to the transfer chamber and configured to heat the substrate; a transfer robot installed in the transfer chamber and configured to transfer the substrate into and out of the process chamber; and a cooling unit configured to cool an inner wall of the transfer chamber.

Abstract: A multi-operation wafer baking system includes a chassis; a wafer loading device mounted on the chassis for laterally moving a wafer; a cruciform transportation device mounted on the chassis for receiving a wafer from the wafer loading device and including a base, an elevation platform, and a rotation platform mounted on the elevation platform and having four carrier arms for carrying wafers; an annular baking device mounted on the chassis to oppose the cruciform transportation device and including a central turn table, a plurality of wafer racks, and a plurality of baking tray assemblies functioning to receive wafers from corresponding wafer racks for performing a baking operation on the wafer; and an unloading device mounted on the chassis for receiving baked wafers. This system allows for baking wafers in a multi-operation manner to thereby improve throughput.

Abstract: The present invention relates to a device for supporting, stacking, and transporting kiln run, in particular for firing ceramic products, comprising an assembly of supports and support beams, like carrier beams and cross beams, on which, in particular one or several supports for placing the kiln run are provided. Thus, for supporting at least one support beam, at least one loose bearing is provided, comprising a support body, moveably disposed, substantially in the direction of the support beam.

Abstract: The heating plate for heating a sheet in a thermoforming machine prior to forming comprises a highly heat-conductive support plate having a working surface, a heating means connected to the support plate, and a wear layer formed as a replaceable wear plate, which is held magnetically to the working surface of the support plate.

Abstract: Provided is a method applicable to the production of silicon wafers having crystal orientation <100> or <110> and consisting in specifying wafer-supporting positions on the occasion of heat treatment in a vertical heat treatment furnace as well as a heat treatment jig for use in carrying out that method. It becomes possible to suppress the shear stress which contributes to the extension of the slip generated at each wafer-supporting element contact point as an initiation, suppress slip growth and thus markedly improve the yield of heat-treated silicon wafers. The heat-treated wafer obtained by using the supporting method and the heat treatment jig has few slip, in particular has no long and large slip, and is high in quality.

Abstract: An object of the present invention is to perform temperature setting of a heating plate so that a wafer is uniformly heated in an actual heat processing time. The temperature of a wafer is measured during a heat processing period from immediately after a temperature measuring wafer is mounted on the heating plate to the time when the actual heat processing time elapses. Whether the uniformity in temperature within the wafer is allowable or not is determined from the temperature of the wafer in the heat processing period, and if the determination result is negative, a correction value for a temperature setting parameter of the heating plate is calculated using a correction value calculation model from the measurement result, and the temperature setting parameter is changed.

Abstract: A heating storage structure 1 includes a plurality of mounting parts 5 each including a mounting face 9 on which articles 31 to be heated are mounted, which is a part of the surface of the mounting part; and a fixing part 7 to which the plurality of mounting parts 5 are detachably fixed so that the plurality of mounting parts 5 are stacked while each of spaces S1 to S4 is left between the mounting face 9 of one of the mounting parts 5 and the mounting part 5 disposed adjacent to the one mounting part 5, and the plurality of mounting parts 5 include a mounting part 5b provided with the mounting face 9 having a thermal emissivity which is different from that of the mounting face 9 of another mounting part 5a.

Abstract: A heat-treating plate has support elements projecting from an upper surface thereof. The support elements are located at apexes of equilateral triangles arranged regularly and continually. The heat-treating plate and a substrate placed on the support elements form a minute space therebetween which is sealed by a sealer. The substrate is sucked by reducing the pressure in the minute space to a negative pressure through exhaust bores. Since all the distances between adjoining support elements are equal, the substrate sags in the same amount between these support elements. With such arrangement of the support elements, sagging of the substrate is inhibited efficiently by a reduced number of support elements.

Abstract: The present invention provides a vertical heat treatment boat that has at least four or more support portions per processing target substrate to be supported, the support portions horizontally supporting the processing target substrate, support auxiliary members on which the processing target substrate is mounted being detachably attached to the four or more support portions, respectively, wherein flatness obtained from all surfaces of the respective support auxiliary members on which the processing target substrate is mounted is adjusted by adjusting thicknesses of the support auxiliary members or interposing spacers between the support portions and the support auxiliary members in accordance with respective shapes of the four or more support portions.

Abstract: A method of fabricating the semiconductor wafer processing fixtures for having longer longevity on high stressed film applications such as LPCVD-SiN, silicon carbide and other ceramics than that of non-processed parts. One aspect of the invention includes nitriding, oxidizing, or carbiding a surface layer of a polysilicon part, such as furnaceware, for converting silicon to a silicon compound and its converted surface covers and masks the underlying polycrystalline structure. A plasma immersion ion implantation of a heavy noble gas or carbon, silicon or nitrogen is followed by to form high-energy states creating gettering states adjacent the surface and the ion implanted region serves to anchor production layers such as LPCVD-SiN forming on the polysilicon part. As a result of gettering effect, tightly bonded high stressed film onto a polysilicon part allows the CVD deposition of much thicker films without peeling or cracking as long as the gettering effect remains.

Abstract: A heat treatment apparatus includes a support sheet placed on an upper surface of a heat-treating plate. The support sheet has, formed on an upper surface thereof, projections for contacting and supporting a substrate, and a lip for contacting edge regions of the substrate. The support sheet is formed by an etching process, and therefore areas of the sheet around the projections are recessed, rather than being perforated as in the case of laser processing. These heat-treating plate and support sheet constitute a substrate support structure capable of supporting the substrate properly.

Abstract: Disclosed herein is a vertical heat treatment system capable of simplifying the structure of various mechanisms in the vicinity of an opening which is formed in a partition wall separating a housing-box transfer area from a treating-object transfer area (a wafer transfer area), and of contributing to space saving, when an object to be treated is carried in the vertical heat treatment system through the opening to carry out a predetermined treatment.

Abstract: Disclosed are devices and methods for supporting glass sheets during a thermal treatment process, such as heat treating, to maintain the physical geometry of the glass sheets. The device can comprise means for separating adjacent glass sheets to prevent them from touching. The separating means can comprise a separation comb having projections and channels configured for receiving the glass sheets, separating rods configured to be positioned between the glass sheets, or a combination of separation combs and separating rods.

Abstract: To provide a substrate supporting/transferring tray, which can be placed on a substrate supporting part arranged in a treatment chamber in which the heat treatment is performed to a substrate, especially on a substrate supporting part having a built-in heating means for heating the substrate, and on an upper side of which, the substrate is placed. At the time of heat-treating the substrate, the substrate can be more uniformly heated, and when the heat treatment is completed, the tray can be easily removed from the substrate supporting part without waiting for the temperature of the substrate to be reduced, and can transfer the substrate to other parts from the treatment chamber in which the heat treatment is performed.

Abstract: In an apparatus for curing a seal in an electrophoretic display device according to the present invention, a support having magnetism may be provided on a curing table to be loaded with an electrophoretic display device in order to support the electrophoretic display device while at the same time generating a magnetic force in a direction opposite to a stress caused by a seal material in the electrophoretic display device, thereby preventing the electrophoretic display device from being bent when the seal material is cured.

Abstract: An edge ring for use in batch thermal processing of wafers supported on a vertical tower within a furnace. The edge rings are have a width approximately overlapping the periphery of the wafers and are detachably supported on the towers equally spaced between the wafer to reduce thermal edge effects. The edge rings have may have internal or external recesses to interlock with structures on or adjacent the fingers of the tower legs supporting the wafers or one or more steps formed on the lateral sides of the edge ring may slide over and then fall below a locking ledge associated with the support fingers. Preferably, the tower and edge ring and other parts of the furnace adjacent the hot zone are composed of silicon.

Abstract: The present invention provides a wafer support jig having at least a support surface on which a treatment target wafer is mounted and supported when performing a heat treatment, wherein skewness Rsk on the support surface that supports the treatment target wafer is 0<Rsk<10, and 100 to 105 protruding objects each having a height of 2 ?n or above and less than 30 ?m are present within arbitrary 1 mm2 without protruding objects each having a height of 30 ?m or above on the entire support surface.

Abstract: The present invention relates to a device for supporting, stacking and transporting kiln run, in particular, when firing ceramic products, comprising an assembly from supports and support beams, in particular carrier beams, cross beams, large plates or similar, on which, in particular, one or several supports for placing kiln run are provided. The device comprises at least one substantially rectangular sleeve, in particular disposed on a kiln cart. In this sleeve a substantially rectangular support of the support assembly is disposed, wherein the sleeve has at least one adjustment means, which is supported in the sleeve, and which can be pressed against the support, wherein the sleeve additionally comprises at least one pressure means, formed from at least one elastic element, which is preloaded through the impact of the adjustment devices, so that it builds up reversal forces against the support.

Abstract: A material supply device for diffusion furnaces includes a main body, a fixing pedestal mechanism, a transmission mechanism and a cover mechanism for a furnace door. The main body includes a base portion and a main rod. The base portion is mounted on the main rod and the main rod extends through the base portion. The fixing pedestal mechanism is mounted on the main rod and is pivotedly mounted on a fixing pedestal. The transmission mechanism is mounted on the base portion and has a transmission rod slidably mounted on the base portion. The cover mechanism for a furnace door is fixed on an end of the transmission rod which is far away from the main body and is turnablely mounted on a cover of the furnace door. Based on the above assemblies, the present invention runs smoothly and improves production quality.

Abstract: According to the present invention, a vertical boat for heat treatment having at least a plurality of supporting columns, a pair of plate members, each coupled to each of the both ends of each supporting column, in which in each of the supporting columns a plurality of supporting parts for horizontally supporting substrates to be treated are formed and an auxiliary supporting member to place each of the substrates to be treated is removably attached to each of the plurality of supporting parts, the vertical boat for heat treatment wherein the auxiliary supporting member is adjusted for each supporting part with respect to the inclination of a surface for placing the substrates to be treated depending on the shape of each supporting part by processing a surface for attaching to the supporting part, or by interposing a spacer between the supporting part and the auxiliary supporting member is provided.

Abstract: A seal hardening furnace is presented in which seal lines in a liquid crystal display panel are hardened. The seal hardening furnace includes a cassette having a rack bar structure. The rack bar structure has rack bars for supporting the substrate along one direction and rack bar supports at ends of the rack bars that support the rack bars. The rack bars have air discharge openings therein. An air injecting passage is connected to the rack bar supports. An air supply unit supplies air through the air injecting passage and through the discharge openings to support the substrate thereon.

Abstract: The present invention provides a vertical heat treatment boat that has at least four or more support portions per processing target substrate to be supported, the support portions horizontally supporting the processing target substrate, support auxiliary members on which the processing target substrate is mounted being detachably attached to the four or more support portions, respectively, wherein flatness obtained from all surfaces of the respective support auxiliary members on which the processing target substrate is mounted is adjusted by adjusting thicknesses of the support auxiliary members or interposing spacers between the support portions and the support auxiliary members in accordance with respective shapes of the four or more support portions.

Abstract: A heat treatment device and a method of manufacturing substrates capable of reducing the slippage of the substrates when the substrates are supported on support parts comprising plate-like members. The device comprises a support device having the support parts in contact with the substrates and a body part supporting the support parts. Each of the support parts comprises the plate-like members supporting the substrate so as not to come into contact with the peripheral edge portion of the substrate, and a non-contact part communication with the outside without coming into contact with the substrate is formed in the substrate placing surface of the support part. The overall opening area of the portion of the non-contact part communicating with the outside is 25 to 94% of the overall area of the substrate placing surface.

Abstract: A paddle for the production of semiconductor wafers is provided. The paddle can be a cantilever paddle made of a ceramic such as silicon carbide and can be used with round or square wafers, such as photovoltaic wafers. The paddle exhibits excellent deflection and strength characteristics.

Abstract: The present invention relates generally to semiconductor wafer fabrication and more particularly but not exclusively to advanced process control methodologies for controlling oxide formation using pressure. The present invention, in one or more implementations, includes a pressure stabilization system to dynamically adjust scavenger pressure in a furnace during wafer fabrication in relation to a pressure formation range, value, or one or more pressure indicators in a wafer fabrication process.

Abstract: The present invention relates to a method for heat processing of a substrate having the step of baking a substrate, on which a coating film is formed, at a predetermined high temperature, comprising a first step of increasing the substrate from a predetermined low temperature to a predetermined intermediate temperature lower than a predetermined reaction temperature at which the coating film reacts, a second step of maintaining the substrate at the predetermined intermediate temperature for a predetermined period of time, and a third step of increasing the temperature of the substrate to the predetermined high temperature higher than the predetermined reaction temperature.

Abstract: An oven protection system for a thermo-forming machine having a source of heat for heating a workpiece. The oven protection system includes a barrier that is movable from a stored position to a deployed position between the source of heat and the workpiece in response to a predetermined condition.

Abstract: Device for filling the pits of a carbon material anode baking furnace with packing material, substantially carbon powder, includes a tank having a body extended by a lower portion forming at least one funnel, wherein at least two outlet orifices permit the packing material to be poured out of the tank and wherein the outlet orifices are substantially aligned, and a device for handling the tank which permits the tank to be moved in a direction perpendicular to the direction in which the outlet orifices are aligned. It is therefore possible to pour the packing material simultaneously into two adjacent pits of a furnace, from the same tank. The device is used for the baking of anodes used for the electrolysis of aluminum.

Abstract: Disclosed is a vertical type heat processing apparatus and a vertical type heat processing method, which can prevent fall down of the boat on a boat carrier mechanism to be caused by an external force, such as an earthquake or the like, by employing a simple structure, while taking a form of the two-boat system. The vertical type heat processing apparatus 1 includes a heating furnace 5 having a furnace port 5a, a cover 17 adapted to close the furnace port 5a, a pair of substrate holding tools 4 each adapted to hold multiple substrates W in a multistage fashion and configured to be placed on the cover 17 via a heat insulating mount 19, and a lifting mechanism 18 adapted to raise and lower the cover 17 so as to carry in and carry out each substrate holding tool 4 relative to the heating furnace 5. When one substrate holding tool 4 is in the heating furnace 5, the other substrate holding tool 4 is placed on a substrate-holding-tool table 22 for loading the substrates W thereon.

Abstract: The present invention provides a vertical type heat processing apparatus, which can prevent falling-down of a boat placed on a heat insulating mount due to an external force, such as an earthquake, by employing a simple structure, while taking a form of the so-called two-boat system. The vertical-type heat processing apparatus comprises a heating furnace 5 having a furnace port 5a formed at a bottom portion thereof, a cover 17 adapted to close the furnace port 5a, a pair of substrate holding tools 4, each configured to be placed on the cover 17 via a heat insulating mount 19 and adapted to hold multiple substrates W in a multistage fashion, a rotating mechanism 20 provided to the cover 17 and adapted to rotate the substrate holding tool 4, and a lifting mechanism 18 adapted to raise and lower the cover 17 so as to carry in and carry out the substrate holding tool 4 relative to the furnace 5.