Abstract: An organic light-emitting display and a method of manufacturing an organic light-emitting display are described. According to an aspect, the organic light-emitting display includes a substrate, a photodiode on the substrate, a planarization layer covering the photodiode, a first electrode on the planarization layer, a pixel defining layer at least partially exposing the first electrode, an organic layer covering the first electrode which is exposed by the pixel defining layer and a second electrode covering the pixel defining layer and the organic layer.

Abstract: A transistor with superior electric characteristics is manufactured. An oxide insulating film is formed over a substrate, an oxide semiconductor film is formed over the oxide insulating film, heat treatment is then conducted at a temperature at which hydrogen contained in the oxide semiconductor film is desorbed and part of oxygen contained in the oxide insulating film is desorbed, then the heated oxide semiconductor film is etched into a predetermined shape to form an island-shaped oxide semiconductor film, a pair of electrodes is formed over the island-shaped oxide semiconductor film, a gate insulating film is formed over the pair of electrodes and the island-shaped oxide semiconductor film, and a gate electrode is formed over the gate insulating film.

Abstract: Provided is a method for manufacturing a semiconductor device so as not expose a semiconductor layer to moisture and the number of masks is reduced. For example, a first conductive film, a first insulating film, a semiconductor film, a second conductive film, and a mask film are formed. The first mask film is processed to form a first mask layer. Dry etching is performed on the first insulating film, the semiconductor film, and the second conductive film with the use of the first mask layer to form a thin film stack body, so that a surface of the first conductive film is at least exposed. Sidewall insulating layers covering side surfaces of the thin film stack body are formed. The first conductive film is side-etched to form a first electrode. A second electrode layer is formed with the second mask layer.

Abstract: A semiconductor device including a transistor having a reduced number of oxygen vacancies in a channel formation region of an oxide semiconductor with stable electrical characteristics or high reliability is provided. A gate insulating film is formed over a gate electrode; an oxide semiconductor layer is formed over the gate insulating film; an oxide layer is formed over the oxide semiconductor layer by a sputtering method to form an stacked-layer oxide film including the oxide semiconductor layer and the oxide layer; the stacked-layer oxide film is processed into a predetermined shape; a conductive film containing Ti as a main component is formed over the stacked-layer oxide film; the conductive film is etched to form source and drain electrodes and a depression portion on a back channel side; and portions of the stacked-layer oxide film in contact with the source and drain electrodes are changed to an n-type by heat treatment.

Abstract: An object is to provide a material suitably used for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which the condition of an electron state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Further, another object is to manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. A semiconductor device is formed using an oxide material which includes crystal with c-axis alignment, which has a triangular or hexagonal atomic arrangement when seen from the direction of a surface or an interface and rotates around the c-axis.

Abstract: A method of fabricating a thin-film transistor, the method including: film-forming an active layer, that contains as a main component thereof an oxide semiconductor structured by O and at least two elements among In, Ga and Zn, in a film formation chamber into which at least oxygen is introduced, and b) heat treating the active layer at less than 300° C. in a dry atmosphere, wherein the film-forming a) and the heat treating are carried out such that, given that an oxygen partial pressure with respect to an entire pressure of an atmosphere within the film formation chamber in the film-forming is PO2depo (%), and an oxygen partial pressure with respect to an entire pressure of an atmosphere during the heat treating is PO2anneal (%), the oxygen partial pressure PO2anneal (%) at the time of the heat treating b) satisfies a relationship: ?20/3PO2depo+40/3?PO2anneal??800/43PO2depo+5900/43.

Abstract: It is an object to provide a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. In addition, it is another object to manufacture a highly reliable semiconductor device at low cost with high productivity. In a semiconductor device including a thin film transistor, a semiconductor layer of the thin film transistor is formed with an oxide semiconductor layer to which a metal element is added. As the metal element, at least one of metal elements of iron, nickel, cobalt, copper, gold, manganese, molybdenum, tungsten, niobium, and tantalum is used. In addition, the oxide semiconductor layer contains indium, gallium, and zinc.

Abstract: An object is to provide an oxide semiconductor having stable electric characteristics and a semiconductor device including the oxide semiconductor. A manufacturing method of a semiconductor film by a sputtering method includes the steps of holding a substrate in a treatment chamber which is kept in a reduced-pressure state; heating the substrate at lower than 400° C.; introducing a sputtering gas from which hydrogen and moisture are removed in the state where remaining moisture in the treatment chamber is removed; and forming an oxide semiconductor film over the substrate with use of a metal oxide which is provided in the treatment chamber as a target. When the oxide semiconductor film is formed, remaining moisture in a reaction atmosphere is removed; thus, the concentration of hydrogen and the concentration of hydride in the oxide semiconductor film can be reduced. Thus, the oxide semiconductor film can be stabilized.

Abstract: Disclosed are a semiconductor device and a method of fabricating the same. A light emitting diode (LED) includes a conductive substrate, and a gallium nitride (GaN)-based semiconductor stack positioned on the conductive substrate. The semiconductor stack includes an active layer that is a semi-polar semiconductor layer. Accordingly, it is possible to provide an LED having improved light emitting efficiency.

Abstract: A method for producing an electronic component with at least one first electrode zone (21) and one second electrode zone (23), which are separated from one another by an insulator (9) and each comprise at least one sublayer of a first electrically conductive material. Also disclosed is an electronic component, which may be produced using the disclosed method.

Abstract: To provide a highly reliable semiconductor device exhibiting stable electrical characteristics. To fabricate a highly reliable semiconductor device. Included are an oxide semiconductor stack in which a first to a third oxide semiconductor layers are stacked, a source and a drain electrode layers contacting the oxide semiconductor stack, a gate electrode layer overlapping with the oxide semiconductor layer with a gate insulating layer provided therebetween, and a first and a second oxide insulating layers between which the oxide semiconductor stack is sandwiched. The first to the third oxide semiconductor layers each contain indium, gallium, and zinc. The proportion of indium in the second oxide semiconductor layer is higher than that in each of the first and the third oxide semiconductor layers. The first and the third oxide semiconductor layers are each an amorphous semiconductor film. The second oxide semiconductor layer is a crystalline semiconductor film.

Abstract: Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.

Abstract: Provided is a miniaturized transistor with stable and high electrical characteristics with high yield. In a semiconductor device including the transistor in which an oxide semiconductor film, a gate insulating film, and a gate electrode layer are stacked in this order, a first sidewall insulating layer is provided in contact with a side surface of the gate electrode layer, and a second sidewall insulating layer is provided to cover a side surface of the first sidewall insulating layer. The first sidewall insulating layer is an aluminum oxide film in which a crevice with an even shape is formed on its side surface. The second sidewall insulating layer is provided to cover the crevice. A source electrode layer and a drain electrode layer are provided in contact with the oxide semiconductor film and the second sidewall insulating layer.

Abstract: An object is, in a thin film transistor in which an oxide semiconductor is used as an active layer, to prevent change in composition, film quality, an interface, or the like of an oxide semiconductor region serving as an active layer, and to stabilize electrical characteristics of the thin film transistor. In a thin film transistor in which a first oxide semiconductor region is used as an active layer, a second oxide semiconductor region having lower electrical conductivity than the first oxide semiconductor region is formed between the first oxide semiconductor region and a protective insulating layer for the thin film transistor, whereby the second oxide semiconductor region serves as a protective layer for the first oxide semiconductor region; thus, change in composition or deterioration in film quality of the first oxide semiconductor region can be prevented, and electrical characteristics of the thin film transistor can be stabilized.

Abstract: Provided are a thin film transistor and a method for manufacturing the same. The thin film transistor manufacturing method includes forming a gate electrode on a substrate, forming an active layer that is adjacent to the gate electrode and includes an oxide semiconductor, forming an oxygen providing layer on the active layer, forming a gate dielectric between the gate electrode and the active layer, forming source and drain electrodes coupled to the active layer, forming a planarizing layer covering the gate electrode and the gate dielectric, forming a hole exposing the active layer, and performing a heat treatment process onto the planarizing layer in an atmosphere of oxygen.

Abstract: A semiconductor device includes an oxide semiconductor layer including a channel formation region which includes an oxide semiconductor having a wide band gap and a carrier concentration which is as low as possible, and a source electrode and a drain electrode which include an oxide conductor containing hydrogen and oxygen vacancy, and a barrier layer which prevents diffusion of hydrogen and oxygen between an oxide conductive layer and the oxide semiconductor layer. The oxide conductive layer and the oxide semiconductor layer are electrically connected to each other through the barrier layer.

Abstract: An object is to manufacture a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, heat treatment (for dehydration or dehydrogenation) is performed to improve the purity of the oxide semiconductor film and reduce impurities including moisture or the like. After that, slow cooling is performed under an oxygen atmosphere. Besides impurities including moisture or the like exiting in the oxide semiconductor film, heat treatment causes reduction of impurities including moisture or the like exiting in a gate insulating layer and those in interfaces between the oxide semiconductor film and films which are provided over and below the oxide semiconductor and in contact therewith.

Abstract: A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.

Abstract: A method for etching a stack with at least one metal layer in one or more cycles is provided. An initiation step is preformed, transforming part of the at least one metal layer into metal oxide, metal halide, or lattice damaged metallic sites. A reactive step is performed providing one or more cycles, where each cycle comprises providing an organic solvent vapor to form a solvated metal, metal halide, or metal oxide state and providing an organic ligand solvent to form volatile organometallic compounds. A desorption of the volatile organometallic compounds is performed.

Abstract: An object is to manufacture a semiconductor device including an oxide semiconductor at low cost with high productivity in such a manner that a photolithography process is simplified by reducing the number of light-exposure masks. In a method for manufacturing a semiconductor device including a channel-etched inverted-staggered thin film transistor, an oxide semiconductor film and a conductive film are etched using a mask layer formed with the use of a multi-tone mask which is a light-exposure mask through which light is transmitted so as to have a plurality of intensities. In etching steps, a first etching step is performed by dry etching in which an etching gas is used, and a second etching step is performed by wet etching in which an etchant is used.

Abstract: Embodiments of the disclosed technology provide an amorphous oxide thin film transistor (TFT), a method for preparing an amorphous oxide TFT, and a display panel. The amorphous oxide thin film transistor includes: a gate electrode, a gate insulating layer, a semiconductor active layer, a source electrode and a drain electrode. The semiconductor active layer comprises a channel layer and an ohmic contact layer, and the channel layer has a greater content of oxygen than the ohmic contact layer; the channel layer contacts the gate insulating layer, and the ohmic contact layer comprises two separated ohmic contact regions, one of which contacts the source electrode and the other of which contacts the drain electrode.

Abstract: An object is to manufacture a semiconductor device including an oxide semiconductor film, which has stable electric characteristics and high reliability. A crystalline oxide semiconductor film is formed, without performing a plurality of steps, as follows: by utilizing a difference in atomic weight of plural kinds of atoms included in an oxide semiconductor target, zinc with low atomic weight is preferentially deposited on an oxide insulating film to form a seed crystal including zinc; and tin, indium, or the like with high atomic weight is deposited on the seed crystal while causing crystal growth. Further, a crystalline oxide semiconductor film is formed by causing crystal growth using a seed crystal with a hexagonal crystal structure including zinc as a nucleus, whereby a single crystal oxide semiconductor film or a substantially single crystal oxide semiconductor film is formed.

Abstract: An embodiment is to include a staggered (top gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. The buffer layer having higher carrier concentration than the semiconductor layer is provided intentionally between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed.

Abstract: This invention belongs to the technical field of memories and specifically relates to a resistive random access memory structure with an electric-field strengthened layer and a manufacturing method thereof. The resistive random access memory in the present invention can include a top electrode, a bottom electrode and a composite layer which is placed between the top electrode and the bottom electrode and have a first resistive switching layer and a second resistive switching and electric-field strengthened layer; the second resistive switching and electric-field strengthened layer cab be adjacent to the first resistive switching layer and have a dielectric constant lower than that of the first resistive switching layer. The electric-field distribution in the RRAM unit is adjustable.

Abstract: Disclosed is a composition for forming a zinc oxide thin film, which contains an organic zinc compound as a starting material, is not ignitable, and can be easily handled. The composition for forming a zinc oxide thin film is capable of forming a transparent zinc oxide thin film which is not doped or doped with a group 3B element by being heated at 300° C. or less. Also disclosed is a method for obtaining a transparent zinc oxide thin film, which is not doped or doped with a group 3B element, using the composition. Specifically, the composition for forming a zinc oxide thin film contains a product which is obtained by partially hydrolyzing an organic zinc compound by adding water to the organic zinc compound or a solution of the organic zinc compound and a group 3B element compound. In cases when a group 3B element compound is contained, the molar ratio of the group 3B element compound to the organic zinc compound is within the range of 0.005-0.3.

Abstract: A method for fabricating a semiconductor device is disclosed in the present invention. The abovementioned method comprises the following steps. Firstly, a gate is formed on a substrate. A gate insulating layer is then formed on the gate, and further an active layer is disposed on the gate insulating layer, wherein the active layer is composed of a microwave absorbing material. Source/drain is defined on the active layer to form the semiconductor device, and a microwave annealing process is finally performed thereon.

Abstract: An object is to provide a semiconductor device having stable electric characteristics in which an oxide semiconductor is used. An oxide semiconductor layer is subjected to heat treatment for dehydration or dehydrogenation treatment in a nitrogen gas or an inert gas atmosphere such as a rare gas (e.g., argon or helium) or under reduced pressure and to a cooling step for treatment for supplying oxygen in an atmosphere of oxygen, an atmosphere of oxygen and nitrogen, or the air (having a dew point of preferably lower than or equal to ?40° C., still preferably lower than or equal to ?50° C.) atmosphere. The oxide semiconductor layer is thus highly purified, whereby an i-type oxide semiconductor layer is formed. A semiconductor device including a thin film transistor having the oxide semiconductor layer is manufactured.

Abstract: According to example embodiments, a thin film transistor (TFT) includes a channel layer including zinc, nitrogen, and oxygen; an etch stop layer on the channel layer; source and drain electrodes respectively contacting both ends of the channel layer; a gate electrode corresponding to the channel layer; and a gate insulating layer between the channel layer and the gate electrode. The etch stop layer includes fluorine. The channel layer may be on the gate electrode.

Abstract: It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device with high productivity. In an inverted staggered (bottom gate) thin film transistor, an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, and a buffer layer formed using a metal oxide layer is provided between the semiconductor layer and a source and drain electrode layers. The metal oxide layer is intentionally provided as the buffer layer between the semiconductor layer and the source and drain electrode layers, whereby ohmic contact is obtained.

Abstract: A method is provided for fabricating a thin film transistor. An insulating and a metal gate contact layer are deposited on a substrate with the insulating layer being positioned between the gate contact layer and the substrate. A portion of the gate contact layer is selectively removed utilizing reactive ion etching incorporating a gas that etches the gate contact layer but not the insulating layer. A plurality of layers is deposited over a remaining portion of the gate contact layer and insulating layer, which include a gate insulating layer, a channel layer, and a metal film. A portion of the metal film is selectively removed utilizing reactive ion etching incorporating the gas that etches the metal film but not the channel layer. The insulating layer includes a high resistivity insulator that can be deposited at temperatures less than 400° C. and the channel layer is comprised of a metal oxide semiconductor.

Abstract: The band tail state and defects in the band gap are reduced as much as possible, whereby optical absorption of energy which is in the vicinity of the band gap or less than or equal to the band gap is reduced. In that case, not by merely optimizing conditions of manufacturing an oxide semiconductor film, but by making an oxide semiconductor to be a substantially intrinsic semiconductor or extremely close to an intrinsic semiconductor, defects on which irradiation light acts are reduced and the effect of light irradiation is reduced essentially. That is, even in the case where light with a wavelength of 350 nm is delivered at 1×1013 photons/cm2·sec, a channel region of a transistor is formed using an oxide semiconductor, in which the absolute value of the amount of the variation in the threshold voltage is less than or equal to 0.65 V.

Abstract: A method of forming an oxide layer. The method includes: forming a layer of reaction-inhibiting functional groups on a surface of a substrate; forming a layer of precursors of a metal or a semiconductor on the layer of the reaction-inhibiting functional groups; and oxidizing the precursors of the metal or the semiconductor in order to obtain a layer of a metal oxide or a semiconductor oxide. According to the method, an oxide layer having a high thickness uniformity may be formed and a semiconductor device having excellent electrical characteristics may be manufactured.

Abstract: One embodiment of the present invention is a material which is suitable for a semiconductor included in a transistor, a diode, or the like. One embodiment of the present invention is an oxide material represented as InM1XM2(1-X)ZnYOZ (0<X<1, 0<Y<1, and Z<1), where M1 is an element belonging to Group 13 and preferably Ga, and M2 is an element belonging to Group 4 or 14. Typically, the content of M2 is arranged to be greater than or equal to 1 atomic % and less than 50 atomic % of that of M1. Generation of oxygen vacancies can be suppressed in an oxide semiconductor material having the above composition. It is also possible to further improve reliability of a transistor with the oxide semiconductor material with the above composition by compensating oxygen vacancies with excessive oxygen.

Abstract: A method for producing a p-type ZnO based compound semiconductor layer including the steps of (a) supplying (i) Zn, (ii) O, (iii) optional Mg, and (iv) a Group 11 element which is Cu and/or Ag to form a MgxZn1-xO (0?x?0.6) single crystal film doped with the Group 11 element; (b) supplying at least one Group 13 element selected from the group consisting of B, Ga, Al, and In on the MgxZn1-xO (0?x?0.6) single crystal film; (c) alternately carrying out the steps (a) and (b) to form a laminate structure; and (d) annealing the laminate structure to form a p-type MgxZn1-xO (0?x?0.6) layer co-doped with the Group 11 element and the Group 13 element.

Abstract: A highly reliable semiconductor device which includes a transistor including an oxide semiconductor is provided. In the semiconductor device including a bottom-gate transistor including an oxide semiconductor layer, a stacked layer of an insulating layer and an aluminum film is provided in contact with the oxide semiconductor layer. Oxygen doping treatment is performed in such a manner that oxygen is introduced to the insulating layer and the aluminum film from a position above the aluminum film, whereby a region containing oxygen in excess of the stoichiometric composition is formed in the insulating layer, and the aluminum film is oxidized to form an aluminum oxide film.

Abstract: A method for producing a p-type ZnO based compound semiconductor layer is provided. The method comprises the steps of (a) preparing an n-type single crystal ZnO based compound semiconductor structure containing a Group 11 element which is Cu and/or Ag and at least one Group 13 element selected from the group consisting of B, Ga, Al, and In, and (b) annealing the n-type single crystal ZnO based compound semiconductor structure to form the p-type ZnO based compound semiconductor layer co-doped with the Group 11 element and the Group 13 element.

Abstract: An object is to manufacture a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, heat treatment (for dehydration or dehydrogenation) is performed to improve the purity of the oxide semiconductor film and reduce impurities including moisture or the like. After that, slow cooling is performed under an oxygen atmosphere. Besides impurities including moisture or the like exiting in the oxide semiconductor film, heat treatment causes reduction of impurities including moisture or the like exiting in a gate insulating layer and those in interfaces between the oxide semiconductor film and films which are provided over and below the oxide semiconductor and in contact therewith.

Abstract: Disclosed is a display substrate including a driving unit on a substrate comprising a first thin film transistor and a display unit on the substrate being adjacent to the driving unit and comprising a second thin film transistor.

Abstract: A thin film transistor array panel includes: a gate line including a gate electrode; a first gate insulating layer on the gate line; a semiconductor layer on the first gate insulating layer and overlapping the gate electrode; a second gate insulating layer on the semiconductor layer and the first gate insulating layer, and an opening in the second gate insulating layer and through which the semiconductor layer is exposed; drain and source electrodes on the second gate insulating and semiconductor layers and facing each other; a first field generating electrode; and a second field generating electrode connected to the drain electrode. The semiconductor layer includes an oxide semiconductor layer, and first and second auxiliary layers on the oxide semiconductor layer and separated from each other. An edge of the drain and source electrodes is disposed inside an edge of the first and second auxiliary layers, respectively.

Abstract: In fabricating a memory device, a first electrode is provided. An alloy is formed thereon, and the alloy is oxidized to provide an oxide layer. A second electrode is provided on the oxide layer. In a further method of fabricating a memory device, a first electrode is provided. Oxide is provided on the first electrode, and an implantation step in undertaken to implant material in the oxide to form a layer including oxide and implanted material having an oxygen deficiency and/or defects therein. A second electrode is the formed on the layer.

Abstract: A method for fabricating array substrate, an array substrate and a display device. The method for fabricating the array substrate comprises forming a thin film transistor, a first transparent electrode (14) and a second transparent electrode (19), wherein a multi dimensional electric field is created by the first transparent electrode (17) and the second transparent electrode (19), wherein forming the first transparent electrode (17) comprises: forming a metal oxide film presenting semiconductor properties; forming the first transparent electrode (17) by subjecting a portion of the metal oxide film to metallization treatment, and forming a semiconductor active layer (141) from a portion which is not subjected to the metallization treatment.

Abstract: An electrical device with light-responsive layers is disclosed. One or more electrically conducting stripes, each insulated from each other, are deposited on a smooth surface of a substrate. Then metal oxide layers, separated by a composite diffusion layer, are deposited. On top of the topmost metal oxide layer another set of elongated conductive strips are disposed in contact with the topmost metal oxide layer such that junctions are formed wherever the top and bottom conducting stripes cross. The resulting device is light responsive only when a certain sign of bias voltage is applied and may be used as a photodetector. An advantage that may be realized in the practice of some disclosed embodiments of the device is that this device may be formed without the use of conventional patterning, thereby significantly reducing manufacturing difficulty.

Abstract: An object is to provide a technique by which a semiconductor device including a high-performance and high-reliable transistor is manufactured. A protective conductive film which protects an oxide semiconductor layer when a wiring layer is formed from a conductive layer is formed between the oxide semiconductor layer and the conductive layer, and an etching process having two steps is performed. In a first etching step, an etching is performed under conditions that the protective conductive film is less etched than the conductive layer and the etching selectivity of the conductive layer to the protective conductive film is high. In a second etching step, etching is performed under conditions that the protective conductive film is more easily etched than the oxide semiconductor layer and the etching selectivity of the protective conductive film to the oxide semiconductor layer is high.

Abstract: An electrically actuated device comprises an active region disposed between a first electrode and a second electrode, a substantially nonrandom distribution of dopant initiators at an interface between the active region and the first electrode, and a substantially nonrandom distribution of dopants in a portion of the active region adjacent to the interface.

Abstract: The present invention provides a method for manufacturing a thin-film transistor and a thin-film transistor manufactured with same. The method includes (1) providing a substrate; (2) forming a first metal layer on the substrate and applying a masking operation to form a gate terminal; (3) forming a gate insulation layer on the gate terminal; (4) forming an oxide semiconductor layer on the gate insulation layer and forming a second metal layer on the oxide semiconductor layer, wherein the second metal layer includes a titanium layer formed on the oxide semiconductor layer and a copper layer formed on the titanium layer and is subjected to a masking operation to form a data line and source/drain terminal; and (5) forming a transparent conductive layer on the second metal layer and applying a masking operation to patternize the transparent conductive layer to form the thin-film transistor.

Abstract: To provide a semiconductor device including an oxide semiconductor which is capable of having stable electric characteristics and achieving high reliability, by a dehydration or dehydrogenation treatment performed on a base insulating layer provided in contact with an oxide semiconductor layer, the water and hydrogen contents of the base insulating layer can be decreased, and by an oxygen doping treatment subsequently performed, oxygen which can be eliminated together with the water and hydrogen is supplied to the base insulating layer. By formation of the oxide semiconductor layer in contact with the base insulating layer whose water and hydrogen contents are decreased and whose oxygen content is increased, oxygen can be supplied to the oxide semiconductor layer while entry of the water and hydrogen into the oxide semiconductor layer is suppressed.

Abstract: A method of fabricating a high mobility semiconductor metal oxide thin film transistor including the steps of depositing a layer of semiconductor metal oxide material, depositing a blanket layer of etch-stop material on the layer of MO material, and patterning a layer of source/drain metal on the blanket layer of etch-stop material including etching the layer of source/drain metal into source/drain terminals positioned to define a channel area in the semiconductor metal oxide layer. The etch-stop material being electrically conductive in a direction perpendicular to the plane of the blanket layer at least under the source/drain terminals to provide electrical contact between each of the source/drain terminals and the layer of semiconductor metal oxide material. The etch-stop material is also chemical robust to protect the layer of semiconductor metal oxide channel material during the etching process.

Abstract: According to one embodiment of the present invention, an electronic device includes: a carbon layer including graphene, a thin film layer formed on the carbon layer, a channel layer formed on the thin film layer, a current cutoff layer formed between the thin film layer and the channel layer so as to cut off the flow of current between the thin film layer and the channel layer, and a source electrode and a drain electrode formed on the channel layer.

Abstract: To improve productivity of a transistor that includes an oxide semiconductor and has good electrical characteristics. In a top-gate transistor including a gate insulating film and a gate electrode over an oxide semiconductor film, a metal film is formed over the oxide semiconductor film, oxygen is added to the metal film to form a metal oxide film, and the metal oxide film is used as a gate insulating film. After an oxide insulating film is formed over the oxide semiconductor film, a metal film may be formed over the oxide insulating film. Oxygen is added to the metal film to form a metal oxide film and added also to the oxide semiconductor film or the oxide insulating film.

Abstract: A method of forming an oxide semiconductor device may be provided. In the method, a substrate comprising a first major surface and a second major surface that faces away from the first major surface may be provided. An oxide semiconductor device may be formed over the first major surface to provide an intermediate device, and the semiconductor device may comprise an oxide active layer. The intermediate device may be subjected to ultraviolet (UV) light (e.g., ultraviolet ray irradiation process) for a first period, and subjected to heat (e.g., thermal treatment process) for a second period. The first and second periods may at least partly overlap.