Abstract: An organic electro luminescence device and a fabrication method thereof are provided. An array element is formed on a first substrate and an electro luminescent diode is formed on a second substrate. The array element and the electro luminescent diode are electrically connected together by a spacer. A separator divides a sub pixel into a first region and a second region. In the electro luminescent diode, an anode electrode is formed over the first and second regions. An organic electro luminescent layer and a cathode electrode are formed on the anode electrode of one of the first and second regions.

Abstract: A thin film transistor includes: an insulating layer; a gate electrode provided on the insulating layer; a gate insulating film provided on the gate electrode; a semiconductor layer provided on the gate insulating film, the semiconductor layer being formed of oxide; a source electrode and a drain electrode provided on the semiconductor layer; and a channel protecting layer provided between the source and drain electrodes and the semiconductor layer. The source electrode is opposed to one end of the gate electrode. The drain electrode is opposed to another end of the gate electrode. The another end is opposite to the one end. The drain electrode is apart from the source electrode. The channel protecting layer covers at least a part of a side face of a part of the semiconductor layer. The part of the semiconductor layer is not covered with the source electrode and the drain electrode above the gate electrode.

Abstract: Optoelectronic device including integrated light emitting device and photodiode. The optoelectronic device includes a light emitting device such as a vertical cavity surface emitting laser (VCSEL) or resonant cavity light emitting diode (RCLED). A photodiode is also included in the optoelectronic device. Between the light emitting device and the photodiode is a transition region. At least part of the transition region is shorted. A metal contact provides a contact to both the light emitting device and the photodiode.

Abstract: An embodiment of the present invention is method of forming an array of 2 transistor DRAM cells organized in rows and columns in which the rows represent words and columns represent bits of the words, each bit column having a pair of balanced, true and complement bit lines, the bit lines being connected in a hierarchical bit line structure, comprising at least one local bit line pair and one global bit line pair, a sensing circuit connected to the global bit line pair detects a differential voltage transition on either line during a read access and provides a sensing strobe signal.

Abstract: A method of making a top-gate organic thin film transistor, comprising forming source and drain contacts on a substrate; oxidizing portions of the source and drain contacts; depositing an organic semiconductor layer to form a bridge between the oxidized portions of the source and drain contacts; depositing a gate insulating layer over the organic semiconductor layer; and forming a gate electrode over the gate insulating layer.

Abstract: Provided are a method of separating a metal layer and an organic light emitting diode. A method of manufacturing a flexible device and a method of manufacturing a flexible display include forming a releasing layer on a substrate, forming a metal layer on the releasing layer, forming an insulating layer on the metal layer, forming a releasable layer on the insulating layer, bonding a plastic to the releasable layer, and separating the substrate and the releasing layer at an interface therebetween to manufacture a flexible device. Since the conventional process equipment using the glass substrate can be compatibly used, the manufacturing cost can be reduced. In addition, since the glass substrate has less limitation in the process temperature compared with the plastic substrate, an electric device having a superior performance can be manufactured.

Abstract: The present invention is a method for manufacturing an organic thin-film transistor substrate including an organic thin-film transistor as a transistor element, and an object of the invention is to provide a manufacturing method capable of forming a bank in a smaller number of steps.

Abstract: Provided are a light-emitting device and a method for manufacturing the same. The light-emitting device includes a substrate, a light-emitting device, a protection device, and a connecting line. The light-emitting device is formed on one part of the substrate, and includes a first semiconductor layer and a second semiconductor layer. The protection device is formed on another part of the substrate, and includes a fourth semiconductor layer and a fifth semiconductor layer. The connecting line electrically connects the light-emitting device and the protection device.

Abstract: A hybrid organic light-emitting transistor device and a manufacturing method thereof are provided. The hybrid organic light-emitting transistor device includes at least one organic light-emitting diode device and at least one organic thin-film transistor device placed on the same substrate. The organic light-emitting diode device has a first organic layer placed between an anode and a cathode, and the organic thin-film transistor device has a second organic layer placed on a source electrode and a drain electrode. The first organic layer and the second organic layer are spatially isolated from each other, and an organic material forming the second organic layer is identical to an organic material forming the first organic layer. The hybrid organic light-emitting transistor with a reduced pixel size and an improved aperture ratio can be easily obtained.

Abstract: Packaged semiconductor electronic device to be individually positioned and coupled to peripheral electronic devices, the package comprising a light emitting semiconductor device (D1), and a switch (S1) for controlling the light emitting semiconductor device.

Abstract: A method of forming a light-emitting diode (LED) device and separating the LED device from a growth substrate is provided. The LED device is formed by forming an LED structure over a growth substrate. The method includes forming and patterning a mask layer on the growth substrate. A first contact layer is formed over the patterned mask layer with an air bridge between the first contact layer and the patterned mask layer. The first contact layer may be a contact layer of the LED structure. After the formation of the LED structure, the growth substrate is detached from the LED structure along the air bridge.

Abstract: A method of packaging a light-emitting diode (LED) chip includes coupling the LED chip to a printed circuit board (PCB) and forming a conductor on a cover plate. Conductive epoxy is applied to at least one of the LED chip and the conductor. The cover plate is coupled to the PCB such that the conductive epoxy forms a circuit connection between the LED chip and the conductor. An LED-based lighting product includes a PCB with one or more LED chips mounted directly thereon. A cover plate has conductors that couple at least to the one or more LED chips and to the PCB, such that the conductors form electrical connections between the one or more LED chips and the PCB.

Abstract: A light emitting device chip is obtained by dicing a light emitting device wafer having a light emitting layer section 24 based on a double heterostructure in which a first-conductivity-type cladding layer 6, an active layer 5 and an second-conductivity-type cladding layer 4, each of which being composed of a compound semiconductor having a composition allowing lattice matching with GaAs, out of compound semiconductors expressed by formula (AlxGa1-x)yIn1-yP (where, 0?x?1, 0?y?1), are stacked in this order, and having the (100) surface appeared on the main surface thereof, and GaP transparent semiconductor layers 20, 90 stacked on the light emitting layer section 24 as being agreed with the crystal orientation thereof, so that the {100} surfaces appear on the side faces of the GaP transparent semiconductor layer.

Abstract: A light emitting display device includes a first electrode formed at a light emitting region of a first substrate; a transparent oxide thin film of about 1 ? to about 200 ? in thickness formed on an entire surface of the first electrode at the light emitting region to substantially cover particle on the entire surface of the first electrode; an organic light emitting layer formed on an entire surface of the oxide thin film to emit a light; and a second electrode formed on an entire surface of the first substrate including the organic light emitting layer.

Abstract: A display panel includes a substrate having a display area and a blank area. The blank area includes at least one of a non-metal line region and a metal-line region. The non-metal line region includes a plurality of insulating patterns and a first conductive pattern layer formed on the substrate. The insulating patterns are isolated from each other by the first conductive pattern layer. The metal-line region includes an insulating multilayer formed on the substrate and a conductive pattern layer formed on the insulating multilayer. Several isolated zones are formed by the conductive pattern layer on the surface of the insulating multilayer.

Abstract: A method for soldering a semiconductor optical device including a resin-made optical lens to an object by a reflow soldering process using a lead-free solder, and a semiconductor optical device for use in the method. A semiconductor optical device including a silicone resin-made optical lens as the resin-made optical lens is used.

Abstract: Provided are a nonvolatile memory device, a method of manufacturing the nonvolatile memory device, and a method of manufacturing a flat panel display device provided therein with the nonvolatile memory device. According to an embodiment, an amorphous silicon layer is formed on a substrate, and then annealed by using an Excimer laser to form a crystallized silicon layer. A nitrogen plasma treatment is performed for the crystallized silicon layer to planarize an upper surface of the crystallized silicon layer. An ONO layer is formed on the nitrogen plasma-treated crystallized silicon layer. A metal layer is formed on the ONO layer. The metal layer, the ONO layer and the nitrogen plasma-treated crystallized silicon layer are patterned.

Abstract: A LED arrangement includes: —a plurality of cells (0, 1, 2, 3) each including at least one respective LED having a binning class as a function of its emission wavelength (L1, L2) and brightness (B1, B2) characteristics, —a plurality of impedance elements (R0, R1, R2, R3) respectively coupled with the cells (0, 1, 2, 3), each impedance element (R0, R1, R2, R3) having an impedance value indicative of the binning class of the at least one LED included in the respective cell (0, 1, 2, 3), and —a controller (5) configured for sensing (6, 80, 81, 82, 83) the impedance values of the impedance elements (R0, R1, R2, R3) and adaptively drive each cell (0, 1, 2, 3) as a function of its binning class as indicated by the impedance element (R0, R1, R2, R3) coupled to the cell.

Abstract: The present application is directed at providing a new lasing device having increased production yields over other single mode laser devices. In particular, a semiconductor lasing device is provided having at least two lasing devices formed on a common substrate. The lasing device is arranged so that in use a preferred lasing device is operational and remaining lasing devices are redundant. This redundancy improves the production yield since only one of the lasing devices needs to function correctly as the others are unused.

Abstract: A semiconductor light emitting apparatus is proposed, which has thyristor without increasing number of constituent semiconductor layers, with large degree of freedom of selection of ON voltage.

Abstract: An object of the invention is to provide a smaller semiconductor device of which the manufacturing process is simplified and the manufacturing cost is reduced and a method of manufacturing the same. Furthermore, an object of the invention is to provide a semiconductor device having a cavity. A first supporting body 5 having a penetration hole 6 penetrating it from the front surface to the back surface is attached to a front surface of a semiconductor substrate 2 with an adhesive layer 4 being interposed therebetween. A device element 1 and wiring layers 3 are formed on the front surface of the semiconductor substrate 2. A second supporting body 7 is attached to the first supporting body 5 with an adhesive layer 8 being interposed therebetween so as to cover the penetration hole 6. The device element 1 is sealed in a cavity 9 surrounded by the semiconductor substrate 2, the first supporting body 5 and the second supporting body 7.

Abstract: A display device and its method of manufacture. The display device is formed to include a substrate having an upper surface, a recess region having a bottom surface and sidewalls, a light-emitting element and a switch element. The light-emitting element includes a first electrode disposed on the recess region, a light-emitting layer disposed on the first electrode, and a second electrode disposed on the light-emitting layer. The switch element is disposed on the substrate and electrically connected to the light-emitting element. The bottom surface of the recess region is lower than the bottom surface of the active layer.

Abstract: A configuration for decreasing the leakage electric current of a transistor for control for controlling an electric potential holding operation of a control electrode of a transistor for drive for flowing an electric current through a display device by adjusting the output electric potential of an electric potential source is disclosed.

Abstract: A contactless power and data transfer system is disclosed. The system includes an encapsulated optoelectronic semiconductor device at least partly disposed within a barrier encapsulation, and a contactless power transfer system configured to transfer at least one of power and data across the barrier encapsulation. A method for manufacturing a contactless power and data transfer system is also disclosed.

Abstract: The invention describes method and apparatus for a mode converter enabling an adiabatic transfer of a higher order mode into a lower order optical mode within a photonic integrated circuit exploiting integrated semiconductor ridge waveguide techniques. As disclosed by the invention, such a mode conversion is achievable by using an asymmetric coupler methodology. In an exemplary embodiment of the invention, the invention is used to provide a low insertion loss optical connection between laterally-coupled DFB laser operating in first order mode and passive waveguide operating in the zero order optical mode. The integrated arrangement fabricated by using one-step epitaxial growth allows for a launch of the laser's light into the waveguide circuitry operating in the zero order lateral mode or efficiently coupling it to single-mode fiber, an otherwise high loss interface due to the difference in laser and optical fiber modes.

Abstract: A method for manufacturing an image display apparatus includes (i) preparing a display unit, wherein the display unit has a plurality of pixel circuits, each of the plurality of pixel circuits being provided with a drive transistor having a first main electrode connected to one terminal of a display device and a second main electrode and a control electrode connected to a power supply, for supplying a drive current to the display device, and a control transistor disposed between the control electrode and the first main electrode in the drive transistor for setting an electric potential of the control electrode of the drive transistor, and (ii) adjusting a voltage applied to between the second main electrode and another terminal of the display device.

Abstract: A light source having a die, a substrate, and a housing is disclosed. The die has a semiconducting light emitting device thereon, the die having a top surface and a bottom surface, light being emitted through the top surface. The die is characterized by a maximum dimension. The substrate has a top surface bonded to the bottom surface of the die. The substrate includes a plurality of electrical traces connected to the die that are used to power the light emitting device. The housing includes a reflector having a reflective inner wall facing the die and an aperture through which light reflected from the inner wall exits the housing. The aperture lies in a plane normal to the top surface of the die and has a height that is less than the maximum dimension of the die. The die is encapsulated in a transparent layer of material.

Abstract: An organic light emitting device and a method for fabricating the same are discussed. According to an embodiment, the method includes forming a mother substrate structure including organic light emitting devices including TFTs and first electrodes, each first electrode electrically connected to the corresponding TFT and being a part of an OLED to be formed; forming first and second conductive layers to form a power line in each organic light emitting device; forming a dummy layer on the first electrodes and the second conductive layer; performing at least one of scribing and grinding processes on the mother substrate structure to divide the mother substrate structure into sub-substrate structures; removing the dummy layer from the first electrodes and the second conductive layer after the performing step; and forming a light emitting layer and a second electrode on the first electrode in one of the sub-substrate structures to form the OLED.

Abstract: A surface-mountable light-emitting diode light source is described, in which the leadframe-bends toward the rear side of the package that are required for surface mounting lie within a transparent plastic molded body. Also described is a method of producing a mixed-light, preferably white-light source on the basis of a UV- or blue-emitting semiconductor LED. The LED is mounted on a leadframe, a transparent plastics molding composition is mixed with a conversion substance and possibly further fillers to form a molding composition. The leadframe is encapsulated, preferably by the injection-molding process, with the molding composition in such a way that the LED is surrounded on its light-exiting sides by the molding composition.

Abstract: A method for fabricating a liquid crystal display panel is provided. A thin film transistor array substrate and a color filter array substrate are formed. The thin film transistor array substrate includes a screen region having gate lines, data lines, thin film transistors, and pixel electrodes; a pad region having gate pads, an overetch prevention pattern formed overlapped with a gate insulating film in an outer portion of each gate pad, and data pads; data pad protection electrodes each on a respective data pad, and a protection film on an entire surface of the screen region and the pad region. The thin film transistor array substrate and the color filter array substrate are bonded together so that the pad region remains uncovered. Also, a portion of the protection film and the overetch prevention pattern of the pad region are etched to partially expose the gate pads and the data pad protection electrodes, and to form gate holes in the gate insulating film over corresponding gate pads.

Abstract: The present invention provides a layered structure including a fullerene layer exhibiting Ohmic behavior. The layered device includes a layer of fullerenes and a layer of a fluoride compound of pre-selected thickness. The layered structure includes a third layer of an electrically conductive material located on the second layer to which electrical contact can be made. The thickness of the second layer is selected so that the layered structure exhibits substantially Ohmic contact across the first, second and third layers. The present invention also provides a light-emitting device which includes a substrate and a first electrically conductive layer defining an anode electrode layer on the substrate. The device includes an electron transport layer which includes fullerenes, and a second electrically conductive layer defining a cathode electrode layer on the electron transport layer. The device includes a layer of light-emissive material between the anode electrode layer and the electron transport layer.

Abstract: A method for fabricating an AMOLED pixel includes forming a transparent semiconductor layer on a substrate and forming a first channel layer of the switch TFT, a lower electrode of a storage capacitor and a second channel layer of a driving TFT. A first dielectric layer is formed over the substrate. A first opaque metal gate of the switch TFT, a second opaque metal gate of the driving TFT and a scan line are formed on the first dielectric layer. A first source and a first drain of the switch TFT are formed in the first channel layer and a second source and a second drain of the switch TFT are formed in the second channel layer. A patterned transparent metal layer is formed on the first dielectric layer. A data line is formed over the substrate. An OLED is formed over the substrate.

Abstract: Provided is an image sensor module at the wafer level including a wafer; an image sensor mounted on one surface of the wafer; a wireless communication chip formed outside the image sensor on the one surface of the wafer; and a protective cover installed on the one surface of the wafer.

Abstract: This invention relates to a method for manufacturing selective area grown stacked-layer electro-absorption modulated laser structure, comprising: step 1: forming a selective growth pattern of a modulator section on a substrate; step 2: simultaneously growing a 2-stacked-layer active region structure of a modulator MQW layer and a laser MQW layer by the first epitaxy step; step 3: etching gratings, and removing the laser MQW layer in the modulator section by selective etching; and step 4: completing the growth of the entire electro-absorption modulated laser structure by a second epitaxy step.

Abstract: An optoelectronic device article comprises a substrate containing at least one electrically conductive microvia, at least one emitter diode and at least one ESD diode, optionally formed in situ, disposed in or on the substrate, and an electrically conductive path between the foregoing elements. A reflector cavity may be defined in the substrate for receiving the emitter diode(s), with retention elements on the substrate used to retain a lens material. High flux density and high emitter diode spatial density may be attained. Thermal sensors, radiation sensors, and integral heat spreaders comprising one or more protruding fins may be integrated into the article.

Abstract: Disclosed are a light emitting device having a zener diode therein and a method of fabricating the light emitting device. The light emitting device comprises a P-type silicon substrate having a zener diode region and a light emitting diode region. A first N-type compound semiconductor layer is contacted to the zener diode region of the P-type silicon substrate to exhibit characteristics of a zener diode together with the P-type silicon substrate. Further, a second N-type compound semiconductor layer is positioned on the light emitting diode region of the P-type silicon substrate. The second N-type compound semiconductor layer is spaced apart from the first N-type compound semiconductor layer. Meanwhile, a P-type compound semiconductor layer is positioned on the second N-type compound semiconductor layer, and an active layer is interposed between the second N-type compound semiconductor layer and the P-type compound semiconductor layer.

Abstract: Methods and apparatuses for causing electroluminescence with charge trapping structures are disclosed. Various embodiments relate to methods and apparatuses for causing electroluminescence with charge carriers of one type provided to the charge trapping structure by a forward biased p-n structure or a reverse biased p-n structure.

Abstract: An active matrix organic electroluminescent substrate includes a substrate having a controlling element region and a luminescent region, a thin film transistor, a first passivation layer, a conductive layer electrically connected to the thin film transistor, and a second passivation layer disposed on the first passivation layer and the conductive layer. The second passivation layer has an opening partially exposing the conductive layer, and a step-shaped structure located between the controlling element region and the luminescent region.

Abstract: A method of manufacturing a semiconductor device including: forming a semiconductor layer on a substrate with transistor and capacitor formation regions; forming first and second photo resist patterns at the transistor and capacitor formation regions, respectively, the second photo resist pattern having a thickness less than that of the first photo resist pattern; patterning the semiconductor layer using the first and second photo resist patterns as a mask; removing the second photo resist pattern to expose the semiconductor layer at the capacitor formation region; implanting ions in the exposed semiconductor layer to form a first electrode of a capacitor; removing the first photo resist pattern; forming a gate electrode at the transistor formation region; forming an second electrode at the capacitor formatting region; and forming a source region and a drain region at the semiconductor layer formed at both sides of the gate electrode.

Abstract: The present invention relates to a method of making supports for light emitting diodes, wherein rigid substrates are used as supports for light emitting diodes, it being proposed, in particular, to render the substrates more fragile in order to make certain zones of a lower layer of the said substrate more flexible so that the substrate is able to deform in the region of the zones thus made flexible, the deformation then taking place without causing the electrical conduction of a top layer, on which the diodes are disposed, to be broken. In one particular embodiment of the invention it is proposed to provide as many rigid substrate plates as there are support planes in the three-dimensional environment, and to connect these various substrate plates together by means of deformable conductive components disposed in accordance with surface mounted component technology.

Abstract: A conventional composition of carbon nitride has a deposition method and properties limited. In the case of using the composition of carbon nitride as a protective film, for example, a material of an object to be coated (goods) is required to satisfy with a condition in disagreement with a temperature during forming the composition of carbon nitride. Besides, in the case of using the composition of carbon nitride as an insulating film in a semiconductor device, low stress relaxation and low coverage for a step are produced since the insulating film has a low hydrogen concentration. Consequently, a composition including carbon nitride according to the present invention is formed at a deposition temperature that enables to include hydrogen in the composition at 30 to 45 atomic %, for example, at temperatures of 100° C. or less, preferably 50° C. or less, more preferably from 20° C. to 30° C., with stability and adhesiveness kept.

Abstract: A method for soldering a semiconductor optical device including a resin-made optical lens to an object by a reflow soldering process using a lead-free solder, and a semiconductor optical device for use in the method. A semiconductor optical device including a silicone resin-made optical lens as the resin-made optical lens is used.

Abstract: A light emitting diode demonstrating high luminescence efficiency and comprising a Group IV semiconductor such as silicon or germanium equivalent thereto as a basic component formed on a silicon substrate by a prior art silicon process, and a fabricating method of waveguide thereof are provided. The light emitting diode of the invention comprises a first electrode for implanting electrons, a second electrode for implanting holes, and a light emitting section electrically connected to the first and the second electrode, wherein the light emitting section is made out of single crystalline silicon and has a first surface and a second surface facing the first surface, wherein with respect to plane orientation (100) of the first and second surfaces, the light emitting section crossing at right angles to the first and second surfaces is made thinner, and wherein a material having a high refractive index is arranged around the thin film section.

Abstract: A display device and its method of manufacture. The display device is formed to include a substrate having an upper surface, a recess region having a bottom surface and sidewalls, a light-emitting element and a switch element. The light-emitting element includes a first electrode disposed on the recess region, a light-emitting layer disposed on the first electrode, and a second electrode disposed on the light-emitting layer. The switch element is disposed on the substrate and electrically connected to the light-emitting element. The bottom surface of the recess region is lower than the bottom surface of the active layer.

Abstract: A light emitting element having a superior light emitting characteristic is provided by forming a region partly including a phosphor (light emitting region) in manufacturing of a light emitting element having an organic compound layer using a high molecular weight material. A solution in which a high polymer having a degree of polymerization of 50 or more is dissolved in a solvent is applied by a spin coating method, and then a low polymer which is composed of the same repetition units as the high polymer and has a degree of polymerization of 2 to 5 and a phosphor are coevaporated to form a light emitting region (105) and only a low polymer is vapor-deposited on the light emitting region to form an organic compound layer (103). Thus, the light emitting region (105) can be partly formed.

Abstract: The present invention provides a light emitting device comprising a first semiconductor substrate including a light emitting cell block having a plurality of light emitting cells connected in series on one surface thereof; a second semiconductor substrate having one surface formed with a rectifying bridge and the other surface bonded to the other surface of the first semiconductor substrate; and a submount substrate to which the second semiconductor substrate is flip-chip bonded to be in contact with the one surface of the second semiconductor substrate, wherein rectified power is applied to the light emitting cell block through the rectifying bridge. The present invention further provides a method of manufacturing the light emitting device.

Abstract: Ball grid array packages for semiconductor die include a thermally conductive container and a substrate that substantially enclose a semiconductor die. The die is positioned with respect to the container by thermally conductive supports formed in the container or attached to the container. The die contacts the supports so that the die and the container form a cavity that is at least partially filled with a thermally conductive material such as a conductive epoxy to promote thermal conduction between the die and the container. The die electrically connects to the substrate with bond wires that extend through an aperture in the substrate and attach to bond pads provided on the substrate. The aperture is typically filled with a protective layer of resin, epoxy, or other material that also encapsulates the bond wires.

Abstract: A display device includes; an insulating substrate, a thin film transistor disposed on the insulating substrate and which comprises a drain electrode, a wall disposed on the thin film transistor and which includes an opening and a contact hole which exposes the drain electrode, a pixel electrode connected to the drain electrode through the contact hole and which comprises a first part in direct contact with the insulating substrate and a second part connected to the first part, an organic layer disposed on the pixel electrode and which comprises an organic emission layer, and a common electrode disposed on the organic layer

Abstract: A display device comprises: an insulating substrate; a first electrode formed over the insulating substrate and physically contacting the insulating substrate; an organic layer which is formed over the first electrode and includes an organic light emitting layer; and a second electrode which is formed over the organic layer.

Abstract: An organic light emitting display including a substrate, a semiconductor layer formed on the substrate, an organic light emitting diode formed on the semiconductor layer, an encapsulant formed on a periphery of the substrate which is an outer periphery of the organic light emitting diode and the semiconductor layer; and an encapsulation substrate attached to the encapsulant.