Having Diverse Electrical Device Patents (Class 438/23)
  • Publication number: 20130153893
    Abstract: A display device includes a display element, a transistor configured to drive the display element, the transistor including a channel region, and a retention capacitor. An oxide semiconductor film is provided in areas across the transistor and the retention capacitor, the oxide semiconductor film including a first region formed in the channel region of the transistor, and a second region having a lower resistance than that of the first region. The second region is formed in the areas of the transistor and retention capacitor other than in the channel region.
    Type: Application
    Filed: December 20, 2012
    Publication date: June 20, 2013
    Applicant: Sony Corporation
    Inventor: Sony Corporation
  • Publication number: 20130153914
    Abstract: An organic light-emitting display device includes a thin film transistor on a substrate, a first wiring and a second wiring overlapping each other, the first and second wirings being at different heights relative to the substrate and being connected to the thin film transistor, and a plurality of insulating layers between the first wiring and the second wiring.
    Type: Application
    Filed: June 13, 2012
    Publication date: June 20, 2013
    Inventors: Chun-Gi You, Joon-Hoo Choi
  • Publication number: 20130157393
    Abstract: An object is to provide a semiconductor device with high aperture ratio or a manufacturing method thereof. Another object is to provide semiconductor device with low power consumption or a manufacturing method thereof. A light-transmitting conductive layer which functions as a gate electrode, a gate insulating film formed over the light-transmitting conductive layer, a semiconductor layer formed over the light-transmitting conductive layer which functions as the gate electrode with the gate insulating film interposed therebetween, and a light-transmitting conductive layer which is electrically connected to the semiconductor layer and functions as source and drain electrodes are included.
    Type: Application
    Filed: February 19, 2013
    Publication date: June 20, 2013
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Semiconductor Energy Laboratory Co., Ltd.
  • Patent number: 8466467
    Abstract: An organic light-emitting display apparatus includes: an active layer formed on the substrate; a gate electrode, in which a first insulation layer formed on the active layer, a first conductive layer formed on the first insulation layer and comprising a transparent conductive material, and a second conductive layer comprising a metal are sequentially stacked; a pixel electrode, in which a first electrode layer formed on the first insulation layer to be spaced apart from the gate electrode and comprising a transparent conductive material, a second electrode layer formed of a semi-permeable metal and comprising pores, and a third electrode layer comprising a metal are sequentially stacked; source/drain electrodes electrically connected to the active layer with a second insulation layer covering the gate electrode and the pixel electrode interposed therebetween; an electro-luminescence (EL) layer formed on the pixel electrode; and an opposite electrode formed on the EL layer to face the pixel electrode, wherein
    Type: Grant
    Filed: April 27, 2011
    Date of Patent: June 18, 2013
    Assignee: Samsung Display Co., Ltd.
    Inventor: In-Young Jung
  • Publication number: 20130146855
    Abstract: Disclosed herein is a display device, including: a substrate; a circuit part configured to include a drive element; a planarization insulating layer; an electrically-conductive layer including a plurality of first electrodes and an auxiliary interconnect; an aperture-defining insulating layer configured to insulate the plurality of first electrodes from each other and have an aperture through which part of the first electrode is exposed; a plurality of light emitting elements; and a separator configured to be formed by removing the planarization insulating layer at a position between a display area, in which the plurality of light emitting elements connected to the drive element are disposed, and a peripheral area which is surrounding the display area. A method of manufacturing a display device is also provided.
    Type: Application
    Filed: February 6, 2013
    Publication date: June 13, 2013
    Applicant: SONY CORPORATION
    Inventor: SONY CORPORATION
  • Publication number: 20130140541
    Abstract: The present invention provides a layer structure comprising a substrate (1), at least one LEC (7) (light emitting electrochemical cell) and at least one further electrotechnical structural element (4, 5, 8), a process for the production of this layer structure, and the use thereof in the production of small and large display and control elements and in the production of casing elements for mobile or stationary electronic devices or small or large household appliances or in the production of keyboard systems without moving components.
    Type: Application
    Filed: June 7, 2011
    Publication date: June 6, 2013
    Applicant: Bayer Intellectual Property GmbH
    Inventors: Rainer Kunz, Wilfried Hedderich, Carsten Benecke
  • Publication number: 20130134441
    Abstract: GaN LEDs monolithically integrated with silicon-based ESD protection diodes. Hybrid MOCVD or HVPE epitaxial systems may be utilized for in-situ epitaxially growth of doped silicon containing films to form both the silicon-based ESD protection diode material stacks as well as a silicon containing transition layer prior to growth of a GaN-based LED material stack. The silicon-based ESD protection diodes may be interconnected with layers of a GaN LED material stack to form Zener diodes connected with the GaN LEDs.
    Type: Application
    Filed: January 28, 2013
    Publication date: May 30, 2013
    Inventor: Jie SU
  • Patent number: 8450121
    Abstract: A pixel includes an organic light emitting diode, a first transistor having a source coupled to a first power source, a control gate coupled to a first node, and a drain coupled to a second node, wherein the first transistor includes a floating gate and an insulating layer between the floating gate and the control gate, a second transistor having a source coupled to a data line, a drain coupled to the first node, and a gate coupled to a scan line, a third transistor having a source coupled to the second node, a drain coupled to the organic light emitting diode, and a gate coupled to one of a light emitting control line and the scan line, and a capacitor coupled between the first power source and the first node.
    Type: Grant
    Filed: September 22, 2011
    Date of Patent: May 28, 2013
    Assignee: Samsung Display Co., Ltd.
    Inventor: Kyung-hoon Chung
  • Patent number: 8445935
    Abstract: A semiconductor apparatus includes a substrate having at least one terminal, a thin semiconductor film including at least one semiconductor device, the thin semiconductor film being disposed and bonded on the substrate; and an individual interconnecting line formed as a thin conductive film extending from the semiconductor device in the thin semiconductor film to the terminal in the substrate, electrically connecting the semiconductor device to the terminal. Compared with conventional semiconductor apparatus, the invented apparatus is smaller and has a reduced material cost.
    Type: Grant
    Filed: February 24, 2011
    Date of Patent: May 21, 2013
    Assignee: Oki Data Corporation
    Inventors: Mitsuhiko Ogihara, Hiroyuki Fujiwara, Masaaki Sakuta, Ichimatsu Abiko
  • Publication number: 20130120327
    Abstract: This disclosure provides systems, methods and apparatus for storage capacitors. In one aspect, a device includes an array having at least a first display element and a second display element, at least one switch configured to control a flow of charge between a source and the first display element, and at least one interferometric optical mask structure disposed in a non-active area of the array between the first display element and the second display element. The optical mask structure includes a storage capacitor formed by a first conductive layer and a second conductive layer. The storage capacitor is electrically coupled to the at least one switch and the first display element.
    Type: Application
    Filed: June 26, 2012
    Publication date: May 16, 2013
    Applicant: Qualcomm Mems Technologies, Inc.
    Inventors: Jae Hyeong Seo, Ming-Hau Tung, Marc M. Mignard, Rihui He
  • Patent number: 8440477
    Abstract: A method for manufacturing an LED (light emitting diode) includes following steps: providing a first electrode, a second electrode and a Zener diode, the Zener diode being electrically connected to the first and second electrodes; providing a mold; the first electrode, the second electrode and the Zener diode being received in the mold; injecting a liquid molding material into the mold, thereby integrally forming a base, a dam, and a reflective cup, the Zener diode being encapsulated in the dam; setting first and second LED chips respectively on the first and second electrodes; filling an encapsulation material in the reflective cup to encapsulate the first and second LED chips. The first and second LED chips are separated from each other by the dam.
    Type: Grant
    Filed: August 15, 2012
    Date of Patent: May 14, 2013
    Assignee: Advanced Optoelectronic Technology, Inc.
    Inventor: Hsing-Fen Lo
  • Publication number: 20130113692
    Abstract: A display includes a pixel array part with pixels that each have at least one transistor whose conduction state is controlled by a drive signal input to a control terminal, and a scanner including a plurality of buffers that are formed of transistors. The buffers correspond to a pixel arrangement and output a drive signal to the control terminals of the transistors of the pixels. The transistors of the pixels and the transistors of the buffers are formed through irradiation with laser light that is moved for scanning in a predetermined direction and has a predetermined wavelength. The transistors in the buffers are formed in such a way that the channel length direction of the transistors is set parallel to the scan direction of the laser light.
    Type: Application
    Filed: November 7, 2012
    Publication date: May 9, 2013
    Applicant: SONY CORPORATION
    Inventor: Sony Corporation
  • Patent number: 8435093
    Abstract: The volume per drop of the drops ejected by each nozzle is detected. It is then determined whether a volume of drops equal to or greater than a target value can be ejected by causing one or more first nozzles to eject drops, the detected volume per drop of the first nozzles falling within a first range of a preset value. When the determination is affirmative, the first nozzles are selected for ejection of drops. When the determination is negative, the first nozzles and one or more second nozzles are selected for ejection of drops. The detected volume per drop of the second nozzles falls within a second range of the present value, where the second range is greater than the first range.
    Type: Grant
    Filed: January 23, 2012
    Date of Patent: May 7, 2013
    Assignee: Panasonic Corporation
    Inventor: Takayuki Takeuchi
  • Patent number: 8436342
    Abstract: Disclosed is an organic light emitting display device and a method of manufacturing the same. The organic light emitting display device includes the thin film transistor of the drive unit that has the activation layer formed in a structure where the first oxide semiconductor layer and the second oxide semiconductor layer are stacked, the thin film transistor of the pixel unit that has the activation layer formed of the second oxide semiconductor layer, and the organic light emitting diode coupled to the thin film transistor of the pixel unit. The thin film transistor of the drive unit has channel formed on the first oxide semiconductor layer having a higher carrier concentration than the second oxide semiconductor layer, having a high charge mobility, and the thin film transistor of the pixel unit has a channel formed on the second oxide semiconductor layer, having a stable and uniform functional property.
    Type: Grant
    Filed: January 8, 2010
    Date of Patent: May 7, 2013
    Assignee: Samsung Display Co., Ltd.
    Inventors: Jin-Seong Park, Yeon-Gon Mo, Jae-Kyeong Jeong, Min-Kyu Kim, Hyun-Joong Chung, Tae-Kyung Ahn
  • Patent number: 8436371
    Abstract: An optoelectronic device article comprises a substrate containing at least one electrically conductive microvia, at least one emitter diode and at least one ESD diode, optionally formed in situ, disposed in or on the substrate, and an electrically conductive path between the foregoing elements. A reflector cavity may be defined in the substrate for receiving the emitter diode(s), with retention elements on the substrate used to retain a lens material. High flux density and high emitter diode spatial density may be attained. Thermal sensors, radiation sensors, and integral heat spreaders comprising one or more protruding fins may be integrated into the article.
    Type: Grant
    Filed: May 24, 2007
    Date of Patent: May 7, 2013
    Assignee: Cree, Inc.
    Inventors: Nicholas W. Medendorp, Jr., James Ibbetson
  • Publication number: 20130105774
    Abstract: A circuit for a pixel in a display device includes drive circuitry, an organic light emitting diode in electrical connection with the drive circuitry, and at least one resistive current path which is selected to be non-emissive in electrical connection with the drive circuitry and in parallel with the organic light emitting diode.
    Type: Application
    Filed: October 26, 2012
    Publication date: May 2, 2013
    Applicant: UNIVERSAL DISPLAY CORPORATION
    Inventor: UNIVERSAL DISPLAY CORPORATION
  • Publication number: 20130109114
    Abstract: A method of manufacturing an array substrate for a liquid crystal display device includes forming gate and data lines crossing each other on a substrate; forming a thin film transistor connected to the gate and data lines; forming a passivation layer on the substrate having the gate lines, data lines and the thin film transistor; forming a first conductive material layer on the passivation layer and connected to a drain electrode of the thin film transistor; oxidizing a surface of the first conductive material layer; forming a second conductive material layer on the oxidized first conductive material layer; forming a photoresist pattern on the second conductive material layer; etching the first and second conductive material layers using the photoresist pattern to form pixel and common electrodes which are alternately arranged in the pixel region and produces an in-plane electric field; and removing the photoresist pattern.
    Type: Application
    Filed: August 1, 2012
    Publication date: May 2, 2013
    Inventors: Ju-Ran Lee, Jeong-Yun Lee, Hang-Sup Cho, Doo-Hee Jang
  • Patent number: 8431422
    Abstract: A method for producing a multiplicity of optoelectronic components includes providing a semiconductor body carrier including on a first main area a multiplicity of semiconductor bodies, each provided with a contact structure and having an active layer that generates electromagnetic radiation, in a semiconductor layer sequence, and forming a planar filling structure on the first main area such that the planar filling structure at least partly covers regions of the contact structure and the semiconductor body carrier without covering the semiconductor body.
    Type: Grant
    Filed: June 18, 2009
    Date of Patent: April 30, 2013
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventor: Siegfried Herrmann
  • Patent number: 8426226
    Abstract: A method for fabricating an integrated AC LED module comprises steps: forming a junction layer on a substrate, and defining a first growth area and a second growth area on the junction layer; respectively growing a Schottky diode and a LED on the first growth area and the second growth area; forming a passivation layer and a metallic layer on the Schottky diode, the LED and the substrate. Thereby, the Schottky diode is electrically connected with the LED via the metallic layer. Thus is promoted the reliability of electric connection of diodes, reduced the layout area of the module, and decreased the fabrication cost.
    Type: Grant
    Filed: January 3, 2012
    Date of Patent: April 23, 2013
    Assignee: National Central University
    Inventors: Jen-Inn Chyi, Geng-Yen Lee, Wei-Sheng Lin
  • Patent number: 8421075
    Abstract: A light emitting device, a light emitting device package, and a lighting system are provided. The light emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers. The active layer includes a first active layer adjacent to the second conductive type semiconductor layer, a second active layer adjacent to the first conductive type semiconductor layer, and a gate quantum barrier between the first and second active layers.
    Type: Grant
    Filed: July 7, 2011
    Date of Patent: April 16, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventors: Yong Tae Moon, Jeong Sik Lee, Dae Seob Han
  • Publication number: 20130082288
    Abstract: The present invention relates to an organic light emitting display device which can prevent a light compensation layer from cracking and a method for fabricating the same.
    Type: Application
    Filed: September 25, 2012
    Publication date: April 4, 2013
    Applicant: LG DISPLAY CO., LTD.
    Inventor: LG DISPLAY CO., LTD.
  • Patent number: 8410487
    Abstract: A manufacturing method and a structure of a light-emitting diode (LED) chip are disclosed. The method includes the steps of: providing a conductive block; providing an epitaxial block; bonding; removing an epitaxial substrate; making independent LEDs; forming a dielectric layer; and making electrical connection. A first LED, a second LED, and a third LED are formed on the conductive block, wherein the first and second LEDs are electrically connected in series, and the second and third LEDs are electrically connected in parallel. Thus, a basic unit with a flexible design of series- and parallel-connected LEDs can be formed to increase the variety and application of LED chip-based designs.
    Type: Grant
    Filed: December 15, 2011
    Date of Patent: April 2, 2013
    Assignee: Helio Optoelectronics Corporation
    Inventors: Wei-Tai Cheng, Ming-Hung Chen, Ching-Jen Pan
  • Patent number: 8409883
    Abstract: The invention provides a phase change memory and a method for forming the phase change memory. The phase change memory includes a storage region and a peripheral circuit region. The peripheral circuit region has a peripheral substrate, peripheral shallow trench isolation (STI) units in the peripheral substrate, and MOS transistors on the peripheral substrate and between the peripheral STI units. The storage region has a storage substrate, an N-type ion buried layer on the storage substrate, vertical LEDs on the on the N-type ion buried layer, storage shallow trench isolation (STI) units between the vertical LEDs, and phase change layers on the vertical LEDs and between the storage STI units. The storage STI units have thickness equal to thickness of the vertical LEDs. Each vertical LED comprises an N-type conductive region on the N-type ion buried layer, and a P-type conductive region on the N-type conductive region. The P-type conductive region contains SiGe.
    Type: Grant
    Filed: June 9, 2011
    Date of Patent: April 2, 2013
    Assignee: Semiconductor Manufacturing International Corp.
    Inventors: Fumitake Mieno, Youfeng He
  • Publication number: 20130075710
    Abstract: An OLED device is disclosed. The OLED device includes a first substrate including a driver element and a connection electrode connected to the driver element, a second substrate including an organic light emission diode element, a contact spacer electrically connected to the connection electrode, and a sealant disposed into a cavity which is formed by the first and second substrates, the connection electrode, the organic light emission diode element, and the contact space. Herein, the sealant is bonded to the contact spacer and the connection electrode and maintains the electric connection between the contact spacer and the connection electrode. In this manner, the driver element and the organic light emission diode element are protected from external oxygen and/or moisture, and the electric connection between the connection electrode and the contact spacer is reinforced.
    Type: Application
    Filed: November 16, 2012
    Publication date: March 28, 2013
    Applicant: LG DISPLAY CO., LTD.
    Inventor: LG Display Co., Ltd.
  • Publication number: 20130078748
    Abstract: An organic light emitting diode display and a fabrication method thereof, the display including a substrate; a thin film transistor on the substrate; and an organic light emitting diode on the substrate, the organic light emitting diode including a pixel electrode, an organic emission layer, and a common electrode, wherein the organic emission layer includes a red (R) pixel, a green (G) pixel, and a blue (B) pixel, the pixel electrode includes a first pixel electrode, a second pixel electrode, and a third pixel electrode that respectively correspond to the red pixel, the green pixel, and the blue pixel, the first pixel electrode, the second pixel electrode, and the third pixel electrode each have different thicknesses, and the first pixel electrode, the second pixel electrode, and the third pixel electrode each include a first hydrophobic layer.
    Type: Application
    Filed: November 21, 2012
    Publication date: March 28, 2013
    Inventors: Beung-Hwa JEONG, Kwang-Nam KIM, Young-Ro JUNG, Yun-Sik HAM
  • Publication number: 20130069085
    Abstract: Disclosed is an organic light-emitting display device capable of preventing the occurrence of cracks at corner regions of an adhesive layer. The organic light-emitting display device includes a first substrate including a plurality of pixels and a second substrate. A thin film transistor (TFT) located at each pixel of the first substrate. A pixel electrode is also located at each pixel. An organic light-emitting unit that emits light is coupled to each pixel electrode. A common electrode is electrically coupled to each organic light-emitting unit. An adhesive layer is coupled to the common electrode. The adhesive layer attaches the first and second substrates. The corner regions of the adhesive layer are rounded in order to control the creation of cracks in the adhesive layer and thereby prevent moisture from entering the active area of the device.
    Type: Application
    Filed: April 24, 2012
    Publication date: March 21, 2013
    Applicant: LG DISPLAY CO., LTD.
    Inventors: Jin-Goo Kang, Joo-Hwan Shin
  • Publication number: 20130056710
    Abstract: An organic light-emitting display apparatus includes a first insulating layer, a second insulating layer on the first insulating layer and including an unevenness portion, a third insulating layer on the second insulating layer, a pixel electrode on the third insulating layer, an opposite electrode facing the pixel electrode, and an organic emission layer between the pixel electrode and the opposite electrode; a thin film transistor including an active layer, a gate electrode, and source/drain electrodes connected to the active layer, the first insulating layer being between the active layer and the gate electrode and the second insulating layer being between the gate electrode, and the source/drain electrodes; and a capacitor including a lower electrode on a same layer as the gate electrode, a dielectric layer of a same material as the third insulating layer, and an upper electrode on a same layer as the pixel electrode.
    Type: Application
    Filed: March 22, 2012
    Publication date: March 7, 2013
    Inventors: Jae-Hwan Oh, Young-Jin Chang, Seong-Hyun Jin, Se-Hun Park, June-Woo Lee, Kwang-Hae Kim, Jong-Hyun Choi, Kwan-Kyu Lee, Won-Kyu Lee, Jae-Beom Choi
  • Publication number: 20130056724
    Abstract: A flat panel display device with oxide thin film transistors and a fabricating method thereof are disclosed. The flat panel display device includes: a substrate; gate lines and data lines formed to cross each other and define a plurality of pixel regions on the substrate; the thin film transistors each including an oxide channel layer which is formed at an intersection of the gate and data lines; a pixel electrode and a common electrode formed in the pixel region with having a passivation layer therebetween; and step coverage compensation patterns formed at a step portion formed by the gate line and a gate electrode of the thin film transistor.
    Type: Application
    Filed: July 19, 2012
    Publication date: March 7, 2013
    Applicant: LG DISPLAY CO., LTD.
    Inventors: Ji Eun Chae, Tae Keun Lee
  • Publication number: 20130056714
    Abstract: An organic EL display includes: a plurality of first electrodes provided in a display region on a drive substrate, the plurality of first electrodes each including a laminated film having two or more layers; an organic layer provided on the plurality of first electrodes and including a light emitting layer; an electrode pad provided in a peripheral region around the display region; and a second electrode provided on the organic layer as well as the electrode pad, wherein the laminated film includes a first conductive film functioning as a reflective film, and a second conductive film provided below the first conductive film, and having a reflectance lower than that of the first conductive film, and the electrode pad corresponds to a part of the laminated film, and includes a conductive film made of a material same as that of the second conductive film.
    Type: Application
    Filed: August 24, 2012
    Publication date: March 7, 2013
    Applicant: SONY CORPORATION
    Inventors: Eiji Hasegawa, Atsuya Makita, Jiro Yamada, Seiichi Yokoyama, Hidetoshi Noda, Hiroshi Sagawa
  • Patent number: 8389348
    Abstract: The mechanisms of forming SiC crystalline regions on Si substrate described above enable formation and integration of GaN-based devices and Si-based devices on a same substrate. The SiC crystalline regions are formed by implanting carbon into regions of Si substrate and then annealing the substrate. An implant-stop layer is used to cover the Si device regions during formation of the SiC crystalline regions.
    Type: Grant
    Filed: September 14, 2010
    Date of Patent: March 5, 2013
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kong-Beng Thei, Jiun-Lei Jerry Yu, Chun Lin Tsai, Hsiao-Chin Tuan, Alex Kalnitsky
  • Publication number: 20130052763
    Abstract: A method of manufacturing a nano-rod and a method of manufacturing a display substrate in which a seed including a metal oxide is formed. A nano-rod is formed by reacting the seed with a metal precursor in an organic solvent. Therefore, the nano-rod may be easily formed, and a manufacturing reliability of the nano-rod and a display substrate using the nano-rod may be improved.
    Type: Application
    Filed: March 19, 2012
    Publication date: February 28, 2013
    Applicants: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION, SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Tae-Young CHOI, Bo-Sung KIM, Kwang-Yeol LEE, See-Won KIM
  • Publication number: 20130049059
    Abstract: Solid state transducer devices having integrated electrostatic discharge protection and associated systems and methods are disclosed herein. In one embodiment, a solid state transducer device includes a solid state emitter, and an electrostatic discharge device carried by the solid state emitter. In some embodiments, the electrostatic discharge device and the solid state emitter share a common first contact and a common second contact. In further embodiments, the solid state lighting device and the electrostatic discharge device share a common epitaxial substrate. In still further embodiments, the electrostatic discharge device is positioned between the solid state lighting device and a support substrate.
    Type: Application
    Filed: August 31, 2011
    Publication date: February 28, 2013
    Applicant: Micron Technology, Inc.
    Inventors: Vladimir Odnoblyudov, Martin F. Schubert
  • Patent number: 8377762
    Abstract: An object of the invention is to improve the reliability of a light-emitting device. Another object of the invention is to provide flexibility to a light-emitting device having a thin film transistor using an oxide semiconductor film. A light-emitting device has, over one flexible substrate, a driving circuit portion including a thin film transistor for a driving circuit and a pixel portion including a thin film transistor for a pixel. The thin film transistor for a driving circuit and the thin film transistor for a pixel are inverted staggered thin film transistors including an oxide semiconductor layer which is in contact with a part of an oxide insulating layer.
    Type: Grant
    Filed: September 13, 2010
    Date of Patent: February 19, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shingo Eguchi, Yoshiaki Oikawa, Kenichi Okazaki, Hotaka Maruyama
  • Publication number: 20130037783
    Abstract: An organic light-emitting display apparatus is disclosed. In one aspect, the apparatus includes a thin film transistor comprising an active layer, a gate electrode, and source and drain electrodes. The apparatus also includes at least two capacitors each comprising a first electrode having a first region doped with ion impurities and a second region not doped with ion impurities, and formed on the same plane as the active layer. Each capacitor also includes a second electrode formed on the same plane as the gate electrode and disposed corresponding to the second region. The apparatus also includes a pixel electrode formed on the same plane as the gate electrode and connected to one of the source and drain electrodes, a light-emitting layer disposed on the pixel electrode, and an opposite electrode disposed on the light-emitting layer.
    Type: Application
    Filed: January 27, 2012
    Publication date: February 14, 2013
    Applicant: Samsung Mobile Display Co., Ltd.
    Inventors: Yul-Kyu Lee, Sun Park
  • Publication number: 20130034919
    Abstract: A method for fabricating an integrated AC LED module comprises steps: forming a junction layer on a substrate, and defining a first growth area and a second growth area on the junction layer; respectively growing a Schottky diode and a LED on the first growth area and the second growth area; forming a passivation layer and a metallic layer on the Schottky diode, the LED and the substrate. Thereby, the Schottky diode is electrically connected with the LED via the metallic layer. Thus is promoted the reliability of electric connection of diodes, reduced the layout area of the module, and decreased the fabrication cost.
    Type: Application
    Filed: January 3, 2012
    Publication date: February 7, 2013
    Inventors: Jen-Inn CHYI, Geng-Yen Lee, Wei-Sheng Lin
  • Patent number: 8367438
    Abstract: An optoelectronic semiconductor component includes a semiconductor body connected to a main area of a carrier body by a solder layer, wherein sidewalls of the semiconductor body are provided with a dielectric layer, and a mirror layer applied to the dielectric layer.
    Type: Grant
    Filed: September 8, 2009
    Date of Patent: February 5, 2013
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventor: Andreas Plöβl
  • Patent number: 8361819
    Abstract: Methods of fabricating of a light-emitting device are provided, the methods include forming a plurality of light-emitting units on a substrate, measuring light characteristics of the plurality of light-emitting units, respectively, depositing a phosphor layer on the plurality of light-emitting units using a printing method, and cutting the substrate to separate the plurality of light-emitting units into unit by unit. The phosphor layer is adjustably deposited according to the measured light characteristics of the plurality of light-emitting units.
    Type: Grant
    Filed: October 13, 2011
    Date of Patent: January 29, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Yu-Sik Kim
  • Publication number: 20130020598
    Abstract: A light emitting device package includes: an undoped semiconductor substrate having first and second surfaces opposed to each other; first and second conductive vias penetrating the undoped semiconductor substrate; a light emitting device mounted on one region of the first surface; a bi-directional Zener diode formed by doping an impurity on the second surface of the undoped semiconductor substrate and having a Zener breakdown voltage in both directions; and first and second external electrodes formed on the second surface of the undoped semiconductor substrate such that they connect the first and second conductive vias to both ends of the bi-directional Zener diode region, respectively.
    Type: Application
    Filed: July 20, 2012
    Publication date: January 24, 2013
    Inventors: Jong In Yang, Sung Tae Kim, Yong Il Kim, Su Yeol Lee, Seung Wan Chae, Hyung Duk Ko, Yung Ho Ryu
  • Publication number: 20130017630
    Abstract: Provided are a crystallization apparatus and method, which prevent cracks from being generated, a method of manufacturing a thin film transistor (TFT), and a method of manufacturing an organic light emitting display apparatus. The crystallization apparatus includes a chamber for receiving a substrate, a first flash lamp and a second flash lamp, which are disposed facing each other within the chamber, wherein amorphous silicon layers are disposed on a first surface of the substrate facing the first flash lamp and a second surface of the substrate facing the second flash lamp, respectively.
    Type: Application
    Filed: September 13, 2012
    Publication date: January 17, 2013
    Applicant: Samsung Display Co., Ltd.
    Inventors: Jin Seong-Hyun, Chang Young-Jin, Oh Jae-Hwan, Lee Won-Kyu
  • Publication number: 20130011944
    Abstract: An integrated circuit including a substrate of a semiconductor material and first metal portions of a first metallization level or of a first via level defining pixels of an image. The pixels are distributed in first pixels, for each of which the first metal portion is connected to the substrate, and in second pixels, for each of which the first metal portion is separated from the substrate by at least one insulating portion.
    Type: Application
    Filed: September 13, 2012
    Publication date: January 10, 2013
    Applicant: STMicroelectronics (Rousset) SAS
    Inventors: Pascal Fornara, Fabrice Marinet
  • Publication number: 20130001533
    Abstract: An organic light emitting display device is provided. Thin film transistors may be located on a substrate. An insulating interlayer having a first contact hole to a third contact hole may be disposed on the substrate. First electrodes electrically connecting the thin film transistors may be located on the insulating interlayer and sidewalls of the first to the third contact holes. A pixel defining layer may be disposed on the insulating interlayer, portions of the first electrodes and the sidewalls of the first to the third contact holes. Light emitting structures may be disposed on the first electrodes in pixel regions. A second electrode may be located on the light emitting structures. Planarization patterns may be disposed on the pixel defining layer to fill the first and the second contact holes. A spacer may be disposed on the pixel defining layer to fill the third contact hole.
    Type: Application
    Filed: May 16, 2012
    Publication date: January 3, 2013
    Applicant: SAMSUNG MOBILE DISPLAY CO., LTD.
    Inventors: Young-Dae Kim, Jang-Soon Im, Il-Jeong Lee, Sang-Bong Lee
  • Publication number: 20130001577
    Abstract: In one aspect, a back plane for a flat panel display apparatus include: a substrate; a source electrode and a drain electrode formed on the substrate; a capacitor bottom electrode formed on a same layer as the source/drain electrodes; an active layer formed on the substrate in correspondence to the source electrode and the drain electrode; a blocking layer interposed between the source electrode and the drain electrode and the active layer; a first insulation layer formed on the substrate to cover the active layer; a gate electrode formed on the first insulation layer in correspondence to the active layer; a capacitor top electrode formed on a same layer as the gate electrode in correspondence to the capacitor bottom electrode; and a second insulation layer formed on the first insulation layer to cover the gate electrode and the capacitor top electrode is provided.
    Type: Application
    Filed: June 12, 2012
    Publication date: January 3, 2013
    Applicant: SAMSUNG MOBILE DISPLAY CO., LTD.
    Inventors: Kwang-Suk KIM, Min-Kyu KIM
  • Publication number: 20120326179
    Abstract: The MEMS shutter includes a shutter having an aperture part, a first spring connected to the shutter, a first anchor connected to the first spring, a second spring and a second anchor connected to the second spring, an insulation film on a surface of the shutter, the first spring, the second spring, the first anchor and the second anchor, the surfaces being in a perpendicular direction to a surface of a substrate, and the insulation film is not present on a surface of the plurality of terminals, and a surface of the shutter, the first spring, the second spring, the first anchor and the second anchor, the surfaces being in a parallel direction to a surface of the substrate and on the opposite side of the side facing the substrate.
    Type: Application
    Filed: June 19, 2012
    Publication date: December 27, 2012
    Inventors: Takuo KAITOH, Takeshi KURIYAGAWA, Ryou SAKATA, Osamu KARIKOME, Timothy J. BROSNIHAN
  • Publication number: 20120313133
    Abstract: A heterostructure contains an IC and an LED. An IC and an LED are initially provided. The IC has at least one first electric-conduction block and at least one first connection block. The IC electrically connects with the first electric-conduction block. The first face of the LED has at least one second electric-conduction block and at least one second connection block. The LED electrically connects to the second electric-conduction block. Subsequently, the first electric-conduction block and the first connection block are respectively joined to the second electric-conduction block and the second connection block. The first electric-conduction block is electrically connected with the second electric-conduction block and forms a heterostructure. The system simultaneously provides functions of heat radiation and electric communication for the IC and LED resulting in a high-density, multifunctional heterostructure.
    Type: Application
    Filed: September 2, 2011
    Publication date: December 13, 2012
    Applicant: NATIONAL CHIAO TUNG UNIVERSITY
    Inventors: KUAN-NENG CHEN, CHENG-TA KO, WEI-CHUNG LO
  • Publication number: 20120292610
    Abstract: An oxide semiconductor device includes a gate electrode on a substrate, a gate insulation layer on the substrate, the gate insulation layer having a recess structure over the gate electrode, a source electrode on a first portion of the gate insulation layer, a drain electrode on a second portion of the gate insulation layer, and an active pattern on the source electrode and the drain electrode, the active pattern filling the recess structure.
    Type: Application
    Filed: September 9, 2011
    Publication date: November 22, 2012
    Inventors: Seong-Min Wang, Ki-Wan Ahn, Joo-Sun Yoon, Ki-Hong Kim
  • Patent number: 8304273
    Abstract: The present invention provides a method to eliminate undesired parallel conductive paths of nanogap devices for aqueous sensing. The method involves the electrical insulation of an electrode pair, except for the nanogap region wherein electrical response is measured. The magnitude of undesired ionic current in a measurement is reduced by two orders of magnitude. The process to accomplish the present invention is self-aligned and avoids fabrication complexity. The invention has a great potential in nanogap device applications.
    Type: Grant
    Filed: January 23, 2009
    Date of Patent: November 6, 2012
    Assignee: Massachusetts Institute of Technology
    Inventors: Francesco Stellacci, J Robert Barsotti, Jr., Zhang Huijuan, John Thong
  • Patent number: 8304771
    Abstract: A fabricating method of a pixel structure is provided. First, a substrate with a plurality of pixel areas is provided. A common electrode is formed on the substrate to surround each pixel area. Then, a capacitance storage electrode is formed on the common electrode, and a first passivation layer is formed to cover the capacitance storage electrode and the common electrode. Following that, a scan line and a gate electrode are formed within each pixel area. Next, a gate insulation layer and a semiconductor layer are formed. A data line, a source, and a drain are formed within each pixel area. After that, a second passivation layer is formed on the substrate, and a contact window is formed in the second passivation layer above the drain. Moreover, a pixel electrode is formed within each pixel area, and the pixel electrode is electrically connected with the drain through the contact window.
    Type: Grant
    Filed: October 8, 2009
    Date of Patent: November 6, 2012
    Assignee: Chunghwa Picture Tubes, Ltd.
    Inventor: Meng-Chi Liou
  • Publication number: 20120267670
    Abstract: An organic light-emitting display having an improved aperture ratio, the organic light-emitting display including a rear electrode, an opposite electrode, and a pixel electrode between the rear electrode and the opposite electrode. Here, an insulating layer is interposed between the pixel electrode and the rear electrode, wherein the pixel electrode, the insulating layer, and the rear electrode are configured as a capacitor of the organic light-emitting display. In such a structure, as the capacitor is disposed in a light-emitting area where the pixel electrode exists, it is not necessary to provide an additional space for a capacitor, thus improving an aperture ratio of the display.
    Type: Application
    Filed: September 23, 2011
    Publication date: October 25, 2012
    Inventors: June-Woo Lee, Jong-Moo Huh, Joon-Hoo Choi
  • Patent number: 8273590
    Abstract: Disclosed is a patterned photoresist layer on a passivation layer, formed by a lithography process with a multi-tone photomask, having a non-photoresist region, a thin photoresist pattern, and a thick photoresist pattern. The passivation layer corresponding to the non-photoresist region is removed, thereby forming vias to expose a part of a drain electrode in a TFT and a part of a top electrode in a storage capacitor, respectively. The thin photoresist pattern is then ashed to expose the passivation layer in a pixel region. Thereafter, a conductive layer is selectively deposited on the exposed passivation layer and on the sidewalls/bottoms of the vias. Subsequently, the remaining thick photoresist pattern is ashed.
    Type: Grant
    Filed: March 17, 2011
    Date of Patent: September 25, 2012
    Assignee: Chimei Innolux Corporation
    Inventor: Cheng-Hsu Chou
  • Patent number: 8263429
    Abstract: A light-emitting component comprising organic layers and having several layers between a base contact and a cover contact, the corresponding process for its preparation. At least one polymer layer and two molecular layers are arranged, so that when the cover contact is a cathode, the layer adjacent to the cover contact is designed as an electron-transporting molecular layer and is doped with an organic or inorganic donor, the electron-transporting layer comprising a principal organic substance and a donor-type doping substance, the molecular weight of the dopant being more than 200 g/mole. When the cover contact is an anode, the layer adjacent to the cover contact is designed as a p-doped hole-transporting molecular layer and is doped with an organic or inorganic acceptor, the hole-transporting layer comprising a principal organic substance and an acceptor-like doping substance, the molecular weight of the dopant being more than 200 g/mole.
    Type: Grant
    Filed: February 8, 2008
    Date of Patent: September 11, 2012
    Assignee: Novaled AG
    Inventors: Jan Blochwitz-Nimoth, Gildas Sorin