Having Diverse Electrical Device Patents (Class 438/23)
  • Patent number: 8062913
    Abstract: A semiconductor structure is formed of nitrides of group III metals having wurtzite crystal structure and grown in vapor phase on a (0001) oriented semiconductor substrate. The structure comprises a bottom cladding layer, a top cladding layer, and a diffusion region positioned between the cladding layers for diffusing light propagating within the semiconductor structure. The diffuse region has refractive index different from those of the cladding layers and non-flat surfaces for providing light diffusing interfaces between the diffusion region and the cladding layers. According to the invention, the diffusion region comprises a plurality of diffusion layers, compositions and thicknesses of said diffusion layers having been chosen to avoid formation of strain-induced dislocations in the diffusion region, and adjacent diffusion layers having different refractive indices in order to further enhance the diffusion efficiency.
    Type: Grant
    Filed: July 2, 2010
    Date of Patent: November 22, 2011
    Assignee: OptoGaN, Oy
    Inventors: Vladislav E. Bougrov, Maxim A. Odnoblyudov
  • Publication number: 20110260210
    Abstract: Monolithically integrated GaN LEDs with silicon-based ESD protection diodes. Hybrid MOCVD or HVPE epitaxial systems may be utilized for in-situ epitaxially growth of doped silicon containing films to form both the silicon-based ESD protection diode material stacks as well as a silicon containing transition layer prior to growth of a GaN-based LED material stack. The silicon-based ESD protection diodes may be interconnected with layers of a GaN LED material stack to form Zener diodes connected with the GaN LEDs.
    Type: Application
    Filed: March 10, 2011
    Publication date: October 27, 2011
    Applicant: Applied Materials, Inc.
    Inventor: Jie SU
  • Publication number: 20110248259
    Abstract: An organic light emitting device and a method of manufacturing the same, the device including a substrate; a thin film transistor on the substrate, the thin film transistor including source and drain electrodes, an oxide semiconductor layer, a gate electrode, and a gate insulating layer that insulates the gate electrode from the source and drain electrodes; a first insulating layer on the thin film transistor; a cathode on the first insulating layer, the cathode being connected to one of the source and drain electrodes of the thin film transistor; a first layer on the cathode, the first layer including a first material, the first material including at least one of metal, metal sulfide, metal oxide, and metal nitride; an organic layer on the first layer; and an anode on the organic layer.
    Type: Application
    Filed: April 7, 2011
    Publication date: October 13, 2011
    Inventors: Il-Soo Oh, Chang-Ho Lee, Hee-Joo Ko, Se-Jin Cho, Hyung-Jun Song, Jin Young Yun, Jong-Hyuk Lee
  • Publication number: 20110241041
    Abstract: Several embodiments of light emitting diode packaging configurations including a substrate with a cavity are disclosed herein. In one embodiment, a cavity is formed on a substrate to contain an LED and phosphor layer. The substrate has a channel separating the substrate into a first portion containing the cavity and a second portion. A filler of encapsulant material or other electrically insulating material is molded in the channel. The first portion can serve as a cathode for the LED and the second portion can serve as the anode.
    Type: Application
    Filed: March 30, 2010
    Publication date: October 6, 2011
    Applicant: MICRON TECHNOLOGY, INC.
    Inventor: Jonathon G. Greenwood
  • Publication number: 20110241010
    Abstract: Provided are a flat panel display device and a method of manufacturing the same. The flat panel display device includes a first thin-film transistor including a first active layer, a first insulation layer disposed on the first active layer, and a first gate electrode disposed on the first insulation layer; a second thin-film transistor including a second active layer, the first insulation layer disposed on the second active layer, a second insulation layer disposed on the first insulation layer, and a second gate electrode disposed on the second insulation layer, and electrically connected to the first thin-film transistor; and a capacitor electrically connected to the first thin-film transistor and the second thin-film transistor.
    Type: Application
    Filed: March 8, 2011
    Publication date: October 6, 2011
    Applicant: Samsung Mobile Display Co., Ltd.
    Inventor: Kyung-Min PARK
  • Publication number: 20110240999
    Abstract: A display device and a method of manufacturing the same. In one embodiment, a display device includes a substrate having a pixel region, a transistor region and a capacitor region, a transistor arranged within the transistor region of the substrate and a capacitor arranged within the capacitor region of the substrate, wherein the capacitor includes a lower electrode arranged on the substrate, a gate insulating layer arranged on the lower electrode and an upper electrode arranged on the gate insulating layer and overlapping the lower electrode, the upper electrode includes a first conductive layer and a second conductive layer arranged on the first conductive layer, wherein the first conductive layer is opaque.
    Type: Application
    Filed: January 31, 2011
    Publication date: October 6, 2011
    Applicant: SAMSUNG MOBILE DISPLAY CO. LTD.
    Inventor: Chun-Gi You
  • Publication number: 20110227851
    Abstract: A touch sensing type liquid crystal display device includes an array substrate includes a first substrate, a common electrode, a pixel electrode, and a touch sensing unit; a color filter substrate including a second substrate and facing the array substrate; an anti-static layer on an outer side of the second substrate and including an organic material and a carbon nano-tube; and a liquid crystal layer between the first substrate and an inner side of the second substrate.
    Type: Application
    Filed: March 18, 2011
    Publication date: September 22, 2011
    Inventors: Kum-Mi Oh, Jin-Wuk Kim, Sung-Hee Kim
  • Publication number: 20110220898
    Abstract: An organic light emitting diode (OLED) display that includes a substrate, a thin film transistor, and a pixel electrode. The thin film transistor is formed on the substrate and includes a semiconductor layer, a gate electrode, a source electrode, and a drain electrode. The pixel electrode is electrically connected to the thin film transistor and is formed on the same layer as the source electrode and the drain electrode. The source electrode and the drain electrode include a first conductive layer, and the pixel electrode includes a first conductive layer and a second conductive layer stacked thereon.
    Type: Application
    Filed: February 28, 2011
    Publication date: September 15, 2011
    Applicant: SAMSUNG MOBILE DISPLAY CO., LTD.
    Inventors: Ju-Won YOON, Il-Jeong LEE, Choong-Youl IM, Young-Dae KIM, Jong-Mo YEO, Do-Hyun KWON, Cheol-Ho YU
  • Publication number: 20110220888
    Abstract: A capacitor of an organic light emitting display device includes a first metal layer on a substrate, a first insulating layer on the first metal layer, an oxide semiconductor layer on the first insulating layer, the oxide semiconductor layer corresponding to the first metal layer, a second insulating layer on the first insulating layer, the second insulating layer including an opening exposing a portion of the oxide semiconductor layer, and a second metal layer on the second insulating layer and in the opening, the second metal layer being connected to the exposed portion of the oxide semiconductor layer.
    Type: Application
    Filed: October 22, 2010
    Publication date: September 15, 2011
    Inventors: Chaun-Gi Choi, Chang-Mo Park, Jong-Han Jeong
  • Publication number: 20110210355
    Abstract: An object is to improve reliability of a light-emitting device. A light-emitting device has a driver circuit portion including a transistor for a driver circuit and a pixel portion including a transistor for a pixel over one substrate. The transistor for the driver circuit and the transistor for the pixel are inverted staggered transistors each including an oxide semiconductor layer in contact with part of an oxide insulating layer. In the pixel portion, a color filter layer and a light-emitting element are provided over the oxide insulating layer. In the transistor for the driver circuit, a conductive layer overlapping with a gate electrode layer and the oxide semiconductor layer is provided over the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed using metal conductive films.
    Type: Application
    Filed: August 30, 2010
    Publication date: September 1, 2011
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei YAMAZAKI, Junichiro SAKATA, Masayuki SAKAKURA, Yoshiaki OIKAWA, Kenichi OKAZAKI, Hotaka MARUYAMA
  • Publication number: 20110207248
    Abstract: The concentration of oxygen, which causes problems such as decreases in brightness and dark spots through degradation of electrode materials, is lowered in an organic light emitting element having a layer made from an organic compound between a cathode and an anode, and in a light emitting device structured using the organic light emitting element. The average concentration of impurities contained in a layer made from an organic compound used in order to form an organic light emitting element having layers such as a hole injecting layer, a hole transporting layer, a light emitting layer, an electron transporting layer, and an electron injecting layer, is reduced to 5×1019/cm2 or less, preferably equal to or less than 1×1019/cm2, by removing the impurities with the present invention. Formation apparatuses are structured as stated in the specification in order to reduce the impurities in the organic compounds forming the organic light emitting elements.
    Type: Application
    Filed: March 17, 2011
    Publication date: August 25, 2011
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei Yamazaki, Yasuyuki Arai
  • Publication number: 20110207249
    Abstract: An organic electro-luminescence display device includes at least one light emission device, the organic light emission device having a first electrode; at least one thin film transistor for driving the light emission device, a pixel electrode being connected to the at least one thin film transistor; a conductive layer formed of a conductive polymer material to electrically connect the light emission device and the pixel electrode.
    Type: Application
    Filed: May 3, 2011
    Publication date: August 25, 2011
    Inventors: GEE SUNG CHAE, JIN WUK KIM
  • Patent number: 7989240
    Abstract: A method of manufacturing an active matrix substrate that enables increased productivity due to a reduction in the number of patterning processes and low generation of particles during the patterning processes. The method includes forming a patterned electrode on a substrate, and covering the first electrode with an insulating film. A mono-crystalline semiconductor layer is then formed on the insulating film by attaching a first layer formed on a surface of a semiconductor wafer to the first insulating film, and peeling off a portion of the semiconductor wafer. The semiconductor layer is then patterned and doped, in part, by utilizing the patterned electrode as a photo mask for light illuminated from a lower side of the substrate. This results in part in mono-crystalline active layers for thin film transistors, which are then configured to form a pixel for an active matrix substrate.
    Type: Grant
    Filed: January 28, 2010
    Date of Patent: August 2, 2011
    Assignee: Samsung Mobile Display Co., Ltd.
    Inventor: Woong-Sik Choi
  • Patent number: 7985608
    Abstract: A method of manufacturing an active matrix substrate that enables increased productivity due to a reduction in the number of patterning processes and low generation of particles during the patterning processes. The method includes forming a patterned electrode on a substrate, and covering the first electrode with an insulating film. A mono-crystalline semiconductor layer is then formed on the insulating film by attaching a first layer formed on a surface of a semiconductor wafer to the insulating film, and peeling off a portion of the semiconductor wafer. The semiconductor layer is then patterned and doped, in part, by utilizing the patterned electrode as a photo mask for light illuminated from a lower side of the substrate. This results in part in mono-crystalline active layers for thin film transistors, which are then configured to form a pixel for an active matrix substrate.
    Type: Grant
    Filed: January 27, 2010
    Date of Patent: July 26, 2011
    Assignee: Samsung Mobile Display Co., Ltd.
    Inventor: Woong-Sik Choi
  • Publication number: 20110169000
    Abstract: A display substrate includes a first light blocking pattern formed on a base substrate, a first switching element, a second light blocking pattern formed on the base substrate, and a first sensing element. The first light blocking pattern is configured to block visible light and transmit infrared light. The first switching element includes a first semiconductor pattern, a first source electrode, a first drain electrode, and a first gate electrode. The second light blocking pattern is configured to block the visible light and transmit the infrared light. The first sensing element is configured to detect the infrared light, and includes a second semiconductor pattern, a second source electrode, a second drain electrode, and a second gate electrode.
    Type: Application
    Filed: October 14, 2010
    Publication date: July 14, 2011
    Inventors: JUNG-SUK BANG, Byeong-Hoon Cho, Sung-Hoon Yang, Suk-Won Jung, Ki-Hun Jeong
  • Publication number: 20110163329
    Abstract: An organic light emitting display apparatus and a method of fabricating the same are provided. The organic light emitting display apparatus includes a pixel unit on which an organic light emitting device is formed, a thin film transistor (TFT) electrically connected to the pixel unit and a data line and a scan line electrically connected to the TFT and disposed crossing each other on a substrate. The data line and the scan line are formed in one layer. A bridge that allows one of the data line and the scan line to bypass the other is on an intersection of the data line and the scan line.
    Type: Application
    Filed: October 20, 2010
    Publication date: July 7, 2011
    Inventors: Min-Kyu Kim, Seong-Kweon Heo
  • Publication number: 20110164198
    Abstract: A vertical alignment liquid crystal display includes a first substrate and a second substrate disposed opposite the first substrate. The first substrate includes a first insulation substrate, as well as a first pixel electrode and a second pixel electrode disposed in a same layer with the first pixel electrode on the first insulation substrate. The second substrate includes a second insulation substrate, a first patterned conductive layer disposed on only a portion of the second insulation substrate which is above the first pixel electrode, and a second patterned conductive layer disposed on only a portion of the second insulation substrate which is above the second pixel electrode.
    Type: Application
    Filed: March 25, 2010
    Publication date: July 7, 2011
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jae-Yong SHIN, Woo-Sung SOHN, Doo-Hwan YOU, Young-Hoon YOO
  • Publication number: 20110156573
    Abstract: An organic electroluminescent device including a switching element and a driving element connected to the switching element on a substrate including a pixel region, a cathode connected to the driving element, in which the cathode includes molybdenum (Mo), an emitting layer on the cathode, and an anode on the emitting layer.
    Type: Application
    Filed: March 4, 2011
    Publication date: June 30, 2011
    Inventors: Jung-Soo HEO, Jae-Hee Park, Sang-Ho Yu, Kyung-Min Park, Sung-Hoon Choi, Seok-Jong Lee
  • Patent number: 7968385
    Abstract: A thin film transistor panel includes; an insulating substrate, a gate line including a gate electrode disposed on the insulating substrate, a gate insulating layer disposed on the gate electrode, a semiconductor layer disposed on the gate insulating layer, the semiconductor layer including a sidewall, a data line including a source electrode disposed on the semiconductor layer, a drain electrode disposed substantially opposite to and spaced apart from the source electrode, a first protective film disposed on the data line, the first protective film including a sidewall, a second protective film disposed on the first protective film and including a sidewall, and a pixel electrode electrically connected to the drain electrode, wherein the sidewall of the second protective film is disposed inside an area where the sidewall of the first protective film is disposed, and the source electrode and the drain electrode cover the sidewall of the semiconductor layer.
    Type: Grant
    Filed: October 26, 2009
    Date of Patent: June 28, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chang-Oh Jeong, Dong-Hoon Lee
  • Publication number: 20110151600
    Abstract: In a method of manufacturing a display device, a first insulating layer is formed on a semiconductor pattern. Ions of a first concentration are injected into source and drain domains of the semiconductor pattern and a lower electrode of the semiconductor pattern by using a mask pattern that selectively overlaps a channel domain of the semiconductor pattern and is positioned on the top of the first insulating layer. The mask pattern is removed. An ion injection process of injecting ions of a second concentration lower than the first concentration into the semiconductor pattern of the channel domain is directly performed in the first insulating layer. A gate electrode that overlaps the channel domain is formed on the top of the first insulating layer. An upper electrode that overlaps the lower electrode is formed on the top of the first insulating layer.
    Type: Application
    Filed: August 16, 2010
    Publication date: June 23, 2011
    Applicant: Samsung Mobile Display Co., Ltd.
    Inventor: Hyun-Uk OH
  • Publication number: 20110147747
    Abstract: A display device includes a flexible panel and a cover member. The flexible panel includes a first substrate and a second substrate. The first substrate includes a first support layer in which an organic insulation layer and an inorganic insulation layer are stacked thereon, and a thin-film transistor and a pixel electrode disposed on the first support layer. The second substrate is opposite to the first substrate. The second substrate includes an organic insulation layer and a second support layer on which the inorganic insulation layer is deposited. The cover member covers an outer surface of the flexible panel. Thus, a display device is manufactured by using a support layer on which an organic insulation layer and an inorganic insulation layer are coated as a base substrate, so that defects generated in a manufacturing process may be prevented.
    Type: Application
    Filed: October 19, 2010
    Publication date: June 23, 2011
    Inventors: Hyung-Il Jeon, Dae-Jin Park, Tae-Hyung Hwang
  • Publication number: 20110148312
    Abstract: A system includes a plurality of light emitting diodes (LEDs) and a control module configured to generate pulse width modulated (PWM) pulses to drive the LEDs. The LEDs and the control module are integrated in an integrated circuit (IC) package.
    Type: Application
    Filed: December 10, 2010
    Publication date: June 23, 2011
    Inventors: Wanfeng Zhang, Albert Wu
  • Publication number: 20110151601
    Abstract: A crystallization method, a method of manufacturing a thin-film transistor, and a method of manufacturing a display device are provided. The crystallization method comprises: forming a backup amorphous silicon layer on a substrate, forming nickel particles on the backup amorphous silicon layer, converting the backup amorphous silicon layer into an amorphous silicon layer by thermally processing the backup amorphous silicon layer so as to diffuse the nickel particles throughout said backup amorphous silicon layer; and irradiating the amorphous silicon layer with energy from a laser.
    Type: Application
    Filed: December 16, 2010
    Publication date: June 23, 2011
    Applicant: SAMSUNG MOBILE DISPLAY CO., LTD.
    Inventors: Kwang-Hae Kim, Moo-Jin Kim
  • Publication number: 20110140114
    Abstract: An organic light emitting display apparatus and a method of manufacturing the same wherein in the organic light emitting device, each of the first to third sub pixels includes: a thin film transistor; a pixel electrode electrically connected to the thin film transistor; and an organic light emitting layer electrically connected to the pixel electrode; and an opposite electrode formed on each of the organic light emitting layers. A pad part is disposed on the non-display region, the pad part including at least one side exposed. The first sub pixel includes a first transmissive conductive layer and a second transmissive conductive layer sequentially stacked between the pixel electrode of the first sub pixel and the organic light emitting layer. The second sub pixel includes the first transmissive conductive layer between the pixel electrode of the first sub pixel and the organic light emitting layer.
    Type: Application
    Filed: October 12, 2010
    Publication date: June 16, 2011
    Applicant: Samsung Mobile Display Co., Ltd.
    Inventors: Moo-Soon KO, Jae-ho Yoo
  • Publication number: 20110143465
    Abstract: A method for forming a pixel of an electroluminescence device includes providing a substrate; defining at least a first area for capacitors and a second area for a transistor on the substrate; forming a first conductive layer over the first area; forming a first dielectric layer over the first conductive layer; forming a second conductive layer over the first dielectric layer; forming a second dielectric layer over the second conductive layer; forming a third conductive layer over the second dielectric layer; forming a layer of capping silicon nitride between the second dielectric layer and the third conductive layer; forming a semiconductor layer over the second area; forming a gate oxide layer over the second area; and forming a fourth conductive layer over the gate oxide layer.
    Type: Application
    Filed: February 22, 2011
    Publication date: June 16, 2011
    Applicant: AU OPTRONICS CORPORATION
    Inventor: Wein-Town Sun
  • Patent number: 7955883
    Abstract: Interdigitated electrode arrays are very promising devices for multi-parameter (bio)sensing, for example the label-free detection of nucleic acid hybridization for diagnostic applications. The current disclosure provides an innovative method for the affordable manufacturing of polymer-based arrays of interdigitated electrodes with ?m-dimensions. The method is based on a combination of an appropriate three-dimensional structure and a single and directional deposition of conductive material. The three-dimensional structure can be realized in a polymer material using a molding step, for which the molds are manufactured by electroplating as a reverse copy of a silicon master structure. In order to ensure sufficient electrical isolation and individual, but convenient, accessibility of the sensors in the array, the interdigitated electrode regions need to be complemented with specific features on the three-dimensional structure. Combined with the use of e.g.
    Type: Grant
    Filed: September 6, 2006
    Date of Patent: June 7, 2011
    Assignees: IMEC, Innogenetics
    Inventors: Wim Laureyn, Jan Suls, Paul Jacobs
  • Publication number: 20110127533
    Abstract: An organic light-emitting display device which may be configured to prevent oxygen or water from penetrating from the outside and which may be more easily mass produced is disclosed. A method of manufacturing an organic light-emitting display device is also disclosed. The organic light-emitting display device may include, for example, a thin-film transistor (TFT) with a gate electrode, an active layer electrically insulated from the gate electrode, source and drain electrodes electrically insulated from the gate electrode and contacting the active layer, an organic light-emitting diode electrically connected to the TFT and an insulating layer interposed between the TFT and the organic light-emitting diode. The insulating layer may include, for example, a first insulating layer covering the TFT, a second insulating layer formed of metal oxide and formed on the first insulating layer and a third insulating layer formed of metal oxide or metal nitride and formed on the second insulating layer.
    Type: Application
    Filed: November 29, 2010
    Publication date: June 2, 2011
    Applicant: SAMSUNG MOBILE DISPLAY CO., LTD.
    Inventors: Hyun-Joong Chung, Jin-Seong Park, Yeon-Gon Mo, Jong-Han Jeong
  • Publication number: 20110121302
    Abstract: An organic light emitting display device with a simplified manufacturing process and improved electrical characteristics, along with a method of manufacturing the device, are disclosed. The device includes: a substrate having a display area and a non-display area; a thin film transistor (TFT) in the display area; a wiring portion in the non-display area; an intermediate layer electrically connected to the TFT and including an organic light emitting layer; and a counter electrode on the intermediate layer. The TFT includes an active layer, a gate electrode, and source/drain electrodes electrically connected to the active layer. The source/drain electrodes include a first conductive layer, a second conductive layer, and a third conductive layer that are sequentially stacked. The wiring portion includes the same material as the first conductive layer. One of the source/drain electrodes is longer than the other, to function as a pixel electrode, and is electrically connected to the intermediate layer.
    Type: Application
    Filed: November 24, 2010
    Publication date: May 26, 2011
    Inventors: Yul-Kyu Lee, Chun-Gi You, Sun Park, Jong-Hyun Park, Jin-Hee Kang
  • Patent number: 7947518
    Abstract: This invention discloses that photolithography can be made compatible with the production of electronic devices containing sensitive materials, if the sensitive materials are over-coated with an ultra-thin layer of non-reactive materials (e.g. inorganic oxides) before undergoing photolithographic patterning. This protecting layer isolates the sensitive materials from solvents and etching reactants used in photolithographic patterning, and does not need to be removed from the sensitive materials after patterning is completed. This invention enables photolithography to be applied to the production of electronic devices containing sensitive materials, facilitating the development of commercially viable production processes for these devices.
    Type: Grant
    Filed: July 30, 2007
    Date of Patent: May 24, 2011
    Assignee: National Taiwan University
    Inventors: Feng-Yu Tsai, Syue-Jhao Jhuo
  • Publication number: 20110117685
    Abstract: A method of manufacturing an organic light emitting diode display, the method including forming an amorphous silicon layer on a buffer layer disposed on substrate, heat-treating the amorphous silicon film to form a microcrystalline silicon film; and scanning and irradiating a linear laser beam twice or more onto the microcrystalline silicon film to form a polysilicon film, wherein a subsequent scanning of the linear laser beam partially overlaps previous scanning of the linear laser beam in a width direction.
    Type: Application
    Filed: November 17, 2010
    Publication date: May 19, 2011
    Applicant: Samsung Mobile Display Co., Ltd.
    Inventors: Kwang-Hae KIM, Moon-Jin KIM
  • Publication number: 20110114961
    Abstract: A method of forming a polycrystalline silicon layer, a thin film transistor (TFT), an organic light emitting diode (OLED) display device having the same, and methods of fabricating the same. The method of forming a polycrystalline silicon layer includes providing a substrate, forming a buffer layer on the substrate, forming an amorphous silicon layer on the buffer layer, forming a groove in the amorphous silicon layer, forming a capping layer on the amorphous silicon layer, forming a metal catalyst layer on the capping layer, and annealing the substrate and crystallizing the amorphous silicon layer into a polycrystalline silicon layer.
    Type: Application
    Filed: February 26, 2010
    Publication date: May 19, 2011
    Applicant: Samsung Mobile Display Co., Ltd.
    Inventors: Dong-Hyun LEE, Ki-Yong Lee, Jin-Wook Seo, Tae-Hoon Yang, Maxim Lisachenko, Byoung-Keon Park, Kil-Won Lee, Jae-Wan Jung
  • Publication number: 20110108860
    Abstract: An optoelectronic module includes a layer structure having a plurality of semiconductor layers including a substrate layer, a first layer arrangement and a second layer arrangement arrangement, wherein 1) the first layer arrangement has a light-emitting layer arranged on the substrate layer, 2) the second layer arrangement contains at least one circuit that controls an operating state of the light-emitting layer, and 3) the second layer arrangement is arranged on the substrate layer and/or surrounded by the substrate layer.
    Type: Application
    Filed: May 13, 2009
    Publication date: May 12, 2011
    Applicant: OSRAM Opto Semiconductors GmbH
    Inventors: Dieter Eissler, Siegfried Herrmann
  • Publication number: 20110101342
    Abstract: A semiconductor device may include a composite represented by Formula 1 below as an active layer. x(Ga2O3).y(In2O3).z(ZnO)??Formula 1 wherein, about 0.75?x/z?about 3.15, and about 0.55?y/z?about 1.70. Switching characteristics of displays and driving characteristics of driving transistors may be improved by adjusting the amounts of a gallium (Ga) oxide and an indium (In) oxide mixed with a zinc (Zn) oxide and improving optical sensitivity.
    Type: Application
    Filed: January 14, 2011
    Publication date: May 5, 2011
    Inventors: Chang-jung Kim, I-hun Song, Dong-hun Kang, Young-soo Park
  • Publication number: 20110104833
    Abstract: An organic light emitting display is disclosed. The display has a pixel which includes a transistor and a capacitor. The active layer of the transistor and at least one of the electrodes of the capacitor comprise a semiconductor oxide.
    Type: Application
    Filed: July 9, 2010
    Publication date: May 5, 2011
    Applicant: Samsung Mobile Display Co., Ltd.
    Inventors: Ki-Nyeng KANG, Young-Shin PYO, Dong-Un JIN
  • Patent number: 7935552
    Abstract: Disclosed are an ink composition and a method for fabricating a liquid crystal display (LCD) device using the same, wherein in forming patterns of the LCD device using an imprint lithography and a roll printing, an ink composition with high thermal resistance, consisting of polymer resin and additive both endurable even at a high temperature is used to form fine patterns with constantly maintaining pattern linewidths and line intervals, the ink composition consisting of 5-45% by weight of polymer resin, 5-45% by weight of additive added to retain thermal stability, and 50-90% by weight of organic solvent, wherein the ink composition is endurable even at a high temperature of 90-250° C.
    Type: Grant
    Filed: November 6, 2009
    Date of Patent: May 3, 2011
    Assignee: LG Display Co., Ltd.
    Inventors: Sung-Hee Kim, Soon-Sung Yoo, Jin-Wuk Kim, Byung-Geol Kim, Byung-Uk Kim, Ki-Beom Lee, Byong-Hoo Kim, Seung-Hyup Shin, Jun-Youg Song, Myoung-Soo Lee
  • Publication number: 20110095274
    Abstract: An organic light-emitting display device, which may be configured to prevent moisture or oxygen from penetrating the organic light-emitting display device from the outside is disclosed. An organic light-emitting display device, which is easily applied to a large display device and/or may be easily mass produced is further disclosed. Additionally disclosed is a method of manufacturing an organic light-emitting display device. An organic light-emitting display device may include, for example, a thin-film transistor (TFT) including a gate electrode, an active layer insulated from the gate electrode, source and drain electrodes insulated from the gate electrode and contacting the active layer and an insulating layer disposed between the source and drain electrodes and the active layer; and an organic light-emitting diode electrically connected to the TFT.
    Type: Application
    Filed: July 1, 2010
    Publication date: April 28, 2011
    Applicant: SAMSUNG MOBILE DISPLAY CO., LTD.
    Inventors: Hyun-Joong CHUNG, Jin-Seong PARK, Jong-Han JEONG, Jae-Kyeong JEONG, Yeon-Gon MO, Min-Kyu KIM, Tae-Kyung AHN, Hui-Won YANG, Kwang-Suk KIM, Eun-Hyun KIM, Jae-Wook KANG, Jae-Soon IM
  • Publication number: 20110097830
    Abstract: In case that a conventional TFT is formed to have an inversely staggered type, a resist mask is required to be formed by an exposing, developing, and droplet discharging in forming an island-like semiconductor region. It resulted in the increase in the number of processes and the number of materials. According to the present invention, a process can be simplified since after forming a source region and a drain region, a portion serving as a channel region is covered by an insulating film serving as a channel protecting film to form an island-like semiconductor film, and so a semiconductor element can be manufactured by using only metal mask without using a resist mask.
    Type: Application
    Filed: January 3, 2011
    Publication date: April 28, 2011
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Yohei Kanno, Gen Fujii
  • Publication number: 20110084271
    Abstract: Disclosed is a highly reliable semiconductor device and a manufacturing method thereof, which is achieved by using a transistor with favorable electrical characteristics and high reliability as a switching element. The semiconductor device includes a driver circuit portion and a pixel portion over one substrate, and the pixel portion comprises a light-transmitting bottom-gate transistor. The light-transmitting bottom-gate transistor comprises: a transparent gate electrode layer; an oxide semiconductor layer over the gate electrode layer, a superficial layer of the oxide semiconductor layer including comprising a microcrystal group of nanocrystals; and source and drain electrode layers formed over the oxide semiconductor layer, the source and drain electrode layers comprising a light-transmitting oxide conductive layer.
    Type: Application
    Filed: October 7, 2010
    Publication date: April 14, 2011
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei YAMAZAKI, Junichiro SAKATA, Kengo AKIMOTO, Kosei NODA
  • Publication number: 20110079786
    Abstract: An organic light emitting diode display includes a substrate, a semiconductor layer on the substrate, the semiconductor layer including an impurity-doped polycrystalline silicon layer, a first capacitor electrode on the substrate main body, the first capacitor electrode including an impurity-doped polycrystalline silicon layer, and bottom surfaces of the first capacitor electrode and semiconductor layer facing the substrate main body being substantially coplanar, a gate insulating layer on the semiconductor layer and the first capacitor electrode, a gate electrode on the semiconductor layer with the gate insulating layer therebetween, and a second capacitor electrode on the first capacitor electrode with the gate insulating layer therebetween, bottom surfaces of the second capacitor electrode and gate electrode facing the substrate main body being substantially coplanar, and the second capacitor electrode having a smaller thickness than the gate electrode.
    Type: Application
    Filed: April 13, 2010
    Publication date: April 7, 2011
    Inventors: Oh-Seob Kwon, Moo-Soon Ko
  • Publication number: 20110069265
    Abstract: An electrostatic discharge protection element, a liquid crystal display device having the same, and a manufacturing method. A first ESD organic TFT, a second ESD organic TFT, a third ESD organic TFT each have a gate electrode, a source electrode and a drain electrode in which the source electrode and drain electrode of the first and second ESD organic TFTs and the gate electrode of the third ESD organic TFT are electrically connected. The gate electrode and the source electrode of the first ESD organic TFT are electrically connected to a first array line and the gate electrode and the drain electrode of the second ESD organic TFT are electrically connected to a second array line. The source electrode of the third ESD organic TFT is electrically connected to a data line or a gate line and the drain of the third ESD organic TFT are electrically connected to a common voltage line.
    Type: Application
    Filed: December 2, 2010
    Publication date: March 24, 2011
    Inventors: Min Joo Kim, Ho Cheol Kang, Kyo Seop Choo
  • Publication number: 20110070671
    Abstract: A method for fabricating a pixel unit is provided. A TFT is formed on a substrate. A protection layer and a patterned photoresist layer are sequentially formed on the substrate entirely. A patterned protection layer is formed by using the patterned photoresist layer as a mask and partially removing the protection layer, wherein the patterned protection layer has an undercut located at a sidewall thereof. A pixel electrode material layer is formed to cover the substrate, the TFT and the patterned photoresist layer, wherein the electrode material layer is disconnected at the undercut and exposes the undercut. A pixel electrode electrically connected to the TFT is formed by lifting off the patterned photoresist layer and parts of the electrode material layer covering the patterned photoresist layer simultaneously through a stripper, wherein the stripper permeates from the undercut to an interface of the patterned photoresist layer and the patterned protection layer.
    Type: Application
    Filed: November 24, 2010
    Publication date: March 24, 2011
    Applicant: AU OPTRONICS CORPORATION
    Inventors: Chin-Yueh Liao, Chih-Chun Yang, Chih-Hung Shih, Shine-Kai Tseng
  • Patent number: 7909671
    Abstract: A dual emitting device includes a transparent substrate and an array of pixels. The array of pixels is disposed on the transparent, and each pixel of the array includes at least one first sub-pixel and at least one second sub-pixel. The first sub-pixel includes a first OLED driven by a first TFT, and a first sheltering layer on the first OLED. The second sub-pixel includes a second OLED driven by a second TFT, and a second sheltering layer formed between the transparent substrate and the second OLED.
    Type: Grant
    Filed: December 15, 2009
    Date of Patent: March 22, 2011
    Assignee: AU Optronics Corp.
    Inventors: Shi-Hao Li, Tze-Chien Tsai
  • Publication number: 20110057306
    Abstract: A module has a substrate, first and second integrated circuits, and a heat sink. The integrated circuits each have a first major surface, a second major surface, a first edge, a second edge, and a third edge and have optical circuits having ports on the first edge and electronic circuits having ports on the second edge. The second edges are connected to the substrate. The first major surface of the second integrated circuit is parallel with the second major surface of the first integrated circuit. The heat sink has a backplane adjacent to the third edge, a first portion along the first major surface of the first integrated circuit, a second portion along the second major surface of the second integrated circuit extending from the backplane, and an insert between the first major surface of the second integrated circuit and the second major surface of the first integrated circuit.
    Type: Application
    Filed: September 4, 2009
    Publication date: March 10, 2011
    Inventors: Michael B. McShane, Perry H. Pelley
  • Patent number: 7897975
    Abstract: A light emitting display device includes a first electrode formed at a light emitting region of a first substrate; a transparent oxide thin film of about 1 ? to about 200 ? in thickness formed on an entire surface of the first electrode at the light emitting region to substantially cover particle on the entire surface of the first electrode; an organic light emitting layer formed on an entire surface of the oxide thin film to emit a light; and a second electrode formed on an entire surface of the first substrate including the organic light emitting layer.
    Type: Grant
    Filed: December 29, 2008
    Date of Patent: March 1, 2011
    Assignee: LG Display Co., Ltd.
    Inventors: Min Su Kim, Doo Seok Yang, Young Hyo Jung, Feng Jin Li, Kyoung Min Kang
  • Publication number: 20110043464
    Abstract: A touch screen display apparatus including a sensor unit to sense and to process light signals and a pixel unit to drive pixels according to the light signal processing performed by the sensor unit. The touch screen display apparatus includes a substrate; a plurality of pixel units disposed on the substrate, wherein each of the pixel units includes a first electrode, a second electrode, and an emission layer interposed between the first electrode and the second electrode; and a plurality of sensor units disposed on the substrate, wherein each of the sensor units includes a sensor first electrode, a sensor second electrode, and an organic light receiving layer interposed between the sensor first electrode and the sensor second electrode.
    Type: Application
    Filed: May 27, 2010
    Publication date: February 24, 2011
    Applicant: Samsung Mobile Display Co., Ltd.
    Inventors: Moon-Jae LEE, Won-Jun Song, Sun-Hee Lee, Young-Hee Lee, Mu-Hyun Kim, Hye-Dong Kim, Ji-Young Kim
  • Publication number: 20110037054
    Abstract: An active matrix organic light emitting display includes a plurality of pixels with each pixel including at least one organic light emitting diode circuit. Each diode circuit producing a predetermined amount of light lm in response to power W applied to the circuit and including n organic light emitting diodes cascaded in series so as to increase voltage dropped across the cascaded diodes by the factor of n, where n is an integer greater than one. Each diode of the n organic light emitting diodes produces approximately 1/n of the predetermined amount of light lm so as to reduce current flowing in the diodes by 1/n. The organic light emitting diode circuit of each pixel includes a thin film transistor current driver with the cascaded diodes connected in the source/drain circuit so the current driver provides the current flowing in the diodes.
    Type: Application
    Filed: August 17, 2009
    Publication date: February 17, 2011
    Inventors: Chan-Long Shieh, Gang Yu
  • Publication number: 20110031493
    Abstract: An object is to improve reliability of a semiconductor device. A semiconductor device including a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate is provided. The driver circuit portion and the display portion include thin film transistors in which a semiconductor layer includes an oxide semiconductor; a first wiring; and a second wiring. The thin film transistors each include a source electrode layer and a drain electrode layer which each have a shape whose end portions are located on an inner side than end portions of the semiconductor layer. In the thin film transistor in the driver circuit portion, the semiconductor layer is provided between a gate electrode layer and a conductive layer. The first wiring and the second wiring are electrically connected in an opening provided in a gate insulating layer through an oxide conductive layer.
    Type: Application
    Filed: August 2, 2010
    Publication date: February 10, 2011
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei YAMAZAKI, Junichiro SAKATA, Masayuki SAKAKURA, Yoshiaki OIKAWA, Kenichi OKAZAKI, Hotaka MARUYAMA
  • Publication number: 20110033960
    Abstract: An organic light emitting diode (OLED) device according to the present invention includes a first substrate; a first electrode on the first substrate in the pixel region, the first electrode formed of a metal; an organic light-emitting layer on the first electrode; a second electrode on the organic light-emitting layer, the second electrode formed of a transparent conductive material; and a transparent layer on the second electrode, the transparent layer including an inorganic material or a semiconductor material.
    Type: Application
    Filed: October 15, 2010
    Publication date: February 10, 2011
    Inventors: Choong Keun Yoo, Jeong Hyun Kim
  • Publication number: 20110031470
    Abstract: Methods for fabricating passivated silicon nanowires and an electronic arrangement thus obtained are described. Such arrangements may comprise a metal-oxide-semiconductor (MOS) structure such that the arrangements may be utilized for MOS field-effect transistors (MOSFETs) or opto-electronic switches.
    Type: Application
    Filed: June 23, 2010
    Publication date: February 10, 2011
    Inventors: Axel Scherer, Sameer Walavalkar, Michael D. Henry, Andrew P. Homyk
  • Patent number: 7884466
    Abstract: According to the present invention, a recess portion is formed in a package substrate which is formed of a multilayer organic substrate having a multilayer wiring, and an LSI chip is accommodated within the recess portion. Wiring traces are formed on the upper surface of a resin which seals the LSI chip connected to the multilayer wiring. The wiring traces are connected to terminal wiring traces connected to the multilayer wiring on the front face of the package substrate and to front-face bump electrodes for external connection on the upper surface of the resin. On the back face side of the package substrate, back-face bump electrodes for external connection are formed and connected to the multilayer wiring.
    Type: Grant
    Filed: April 9, 2007
    Date of Patent: February 8, 2011
    Assignee: Oki Electric Industry Co., Ltd.
    Inventors: Masamichi Ishihara, Fumihiko Ooka, Yoshihiko Ino