Abstract: A laser processing method which can accurately cut an object to be processed along a line to cut is provided. A modified region 7 formed by multiphoton absorption forms a cutting start region 8 within an object to be processed 1 along a line to cut 5. Thereafter, the object 1 is irradiated with laser light L2 absorbable by the object 1 along the line to cut 5, so as to generate fractures 24 from the cutting start region 8 acting as a start point, whereby the object 1 can accurately be cut along the line to cut 5. Expanding an expandable film 19 having the object 1 secured thereto separates individual chips 25 from each other, which can further improve the reliability in cutting the object 1 along the line to cut 5.

Abstract: A semiconductor structure and a manufacturing method thereof are provided. The method includes the following steps. Firstly, a semiconductor substrate having an active surface and a back surface is provided. The active surface is opposite to the back surface, and the semiconductor substrate includes at least one grounding pad disposed on the active surface. Secondly, at least one through silicon via is formed through the semiconductor substrate from the back surface to the active surface thus exposing the grounding pad. Then, a conductive layer is formed on the back surface of the semiconductor substrate and filled into the through silicon via to electrically connect to the grounding pad and the semiconductor substrate.

Abstract: In a semiconductor wafer with a supporting tape attached to the back side of the wafer, a coating member having a refractive index close to that of the supporting tape is formed on a pear-skin surface of the supporting tape to thereby planarize the pear-skin surface. Thereafter, a pulsed laser beam is applied from the upper side of the coating member to the semiconductor wafer in the condition where the focal point of the pulsed laser beam is set at a predetermined depth in the semiconductor wafer. Accordingly, the pulsed laser beam can be sufficiently focused inside the semiconductor wafer to thereby well form a modified layer inside the semiconductor wafer.

Abstract: An improved method for singulation of electronic substrates into dice uses a laser to first form cuts in the substrate and then chamfers the edges of the cuts by altering the laser parameters. The chamfers increase die break strength by reducing the residual damage and removes debris caused by the initial laser cut without requiring additional process steps, additional equipment or consumable supplies.

Abstract: A method relates to separating a component composite into a plurality of component regions, wherein the component composite is provided having a semiconductor layer sequence comprising a region for generating or for receiving electromagnetic radiation. The component composite is mounted on a rigid subcarrier. The component composite is separated into the plurality of component regions, wherein one semiconductor body is produced from the semiconductor layer sequence for each component region. The component regions are removed from the subcarrier.

Abstract: A laser processing method which can highly accurately cut objects to be processed having various laminate structures is provided. An object to be processed comprising a substrate and a laminate part disposed on the front face of the substrate is irradiated with laser light L while a light-converging point P is positioned at least within the substrate, so as to form a modified region due to multiphoton absorption at least within the substrate, and cause the modified region to form a starting point region for cutting. When the object is cut along the starting point region for cutting, the object 1 can be cut with a high accuracy.

Abstract: A method of cutting an object which can accurately cut the object is provided. An object to be processed 1 such as a silicon wafer is irradiated with laser light L while a light-converging point P is positioned therewithin, so as to form a modified region 7 due to multiphoton absorption within the object 1, and cause the modified region 7 to form a starting point region for cutting 8 shifted from the center line CL of the thickness of the object 1 toward the front face 3 of the object 1 along a line along which the object should be cut. Subsequently, the object 1 is pressed from the rear face 21 side thereof. This can generate a fracture from the starting point region for cutting 8 acting as a start point, thereby accurately cutting the object 1 along the line along which the object should be cut.

Abstract: A wafer is divided by setting the focal point of a laser beam inside the wafer at positions corresponding to division lines, thereby forming modified layers inside the wafer along the division lines. Each modified layer has a thickness ranging from the vicinity of the front side of the wafer to the vicinity of the back side of the wafer. An etching gas or an etching liquid is supplied to the wafer to erode the modified layers, thereby dividing the wafer into individual devices. The modified layers are not crushed, so fine particles are not generated in dividing the wafer. Accordingly, fine particles do not stick to the surface of each device and cause a reduction in quality. Further, since the modified layers are removed by etching, it is possible to prevent a reduction in die strength of each device due to the remainder of the modified layers.

Abstract: A method for manufacturing a semiconductor device includes forming a starting-point crack on a cleavage line on a surface of a semiconductor substrate; forming preliminary cracks intermittently along the cleavage line on the surface of the semiconductor substrate; and cleaving the semiconductor substrate along the cleavage line passing through the preliminary cracks, from the starting-point crack, wherein each of the preliminary cracks has a crack joining the cleavage line from outside of the cleavage line, in a direction of a progress of cleaving.

Abstract: In one embodiment, semiconductor die are singulated from a semiconductor wafer having a backmetal layer by placing the semiconductor wafer onto a carrier tape with the backmetal layer adjacent the carrier tape, forming singulation lines through the semiconductor wafer to expose the backmetal layer within the singulation lines, and fluid machining the semiconductor wafer to remove the backmetal layer from the singulation lines.

Abstract: Methods of dicing substrates having a plurality of ICs. A method includes forming a mask and patterning the mask with a femtosecond laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the substrate between the ICs. The substrate is etched through the gaps in the patterned mask to singulate the IC. The mask is removed and metallized bumps on the diced substrate are contacted with an inorganic acid solution to remove mask residues.

Abstract: A method for fusing a laser fuse in accordance with various embodiments may include: providing a semiconductor workpiece having a substrate region and at least one laser fuse; fusing the at least one laser fuse from a back side of the substrate region by means of an infrared laser beam.

Abstract: The present invention provides a dicing die bond film in which peeling electrification hardly occurs and which has good tackiness and workability. The dicing die bond film of the present invention is a dicing die bond film including a dicing film and a thermosetting type die bond film provided thereon, wherein the thermosetting type die bond film contains conductive particles, the volume resistivity of the thermosetting type die bond film is 1×10?6 ?·cm or more and 1×10?3 ?·cm or less, and the tensile storage modulus of the thermosetting type die bond film at ?20° C. before thermal curing is 0.1 to 10 GPa.

Abstract: The present invention relates to insertion of a substrate separation step in fabrication of electronics, optoelectronics and microelectromechanical devices (MEMS), particularly double-sided devices which functionalities require designs and fabrication processes at both sides of substrates. In the method, both sides of a semiconductor substrate are processed, prior to slicing of the substrate from the sidewall into two pieces, and the device fabrication continues on the new surfaces of the two resulting substrates after the slicing. The present invention is applicable to various schemes in crystalline silicon solar cell fabrication. Compared with the baseline manufacturing flow, the method can produce two solar cells from one starting substrate, with a potentially significant reduction in production cost per final solar cell.

Abstract: In one embodiment, a dielectric material layer embedding metal structures is ablated from the chip-containing substrate by laser grooving, which is performed on dicing channels of the chip-containing substrate. Subsequently, an underfill layer is formed over the dielectric material layer in a pattern that excludes the peripheral areas of the chip-containing substrate. The physically exposed dicing channels at the periphery can be employed to align a blade to dice the chip-containing substrate. In another embodiment, an underfill layer is formed prior to any laser grooving. Mechanical cutting of the underfill layer from above dicing channels is followed by laser ablation of the dicing channels and subsequent mechanical cutting to dice a chip-containing substrate.

Abstract: In one aspect of the present invention, a method of sawing a semiconductor wafer will be described. A semiconductor wafer is positioned in a wafer sawing apparatus that includes a sawing blade and a movable support structure that physically supports the semiconductor wafer. The semiconductor wafer is coupled with the support structure with various layers, including a die attach film, an adhesive and a base film. The die attach film is cut with the sawing blade. During the cutting operation, a contact portion of the sawing blade engages one of the layers and moves at least partly in one direction. While the contact portion of the sawing blade engages the layer, the support structure moves in the opposite direction. Various aspects of the present invention relate to arrangements and a wafer sawing apparatus that involve the aforementioned sawing method.

Abstract: Methods and systems are provided for the split and separation of a layer of desired thickness of crystalline semiconductor material containing optical, photovoltaic, electronic, micro-electro-mechanical system (MEMS), or optoelectronic devices, from a thicker donor wafer using laser irradiation.

Abstract: Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer. The mask is composed of a layer covering and protecting the integrated circuits. The mask is patterned with a femtosecond-based laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits.

Abstract: A method and system for cleaving a film of material utilizing thermal flux. The method includes providing a substrate having a face and an underlying cleave region including a prepared initiation region. Additionally, the method includes subjecting the initiation region to a first thermal flux to form a cleave front separating the cleave region of the substrate to a film portion and a bulk portion. The method further includes subjecting an area of the bulk portion substantially in the vicinity of the cleave front to a second thermal flux to cause a temperature difference above and below the cleave region for inducing a propagation of the cleave front expanding the film portion to the area at the expense of the bulk portion. Furthermore, the method includes determining a scan path for the second thermal flux based on the cleave front. Moreover, the method includes scanning the second thermal flux to follow the scan path to further propagate the cleave front.

Abstract: In embodiments, a hybrid wafer or substrate dicing process involving an initial laser scribe and subsequent plasma etch is implemented for die singulation. The laser scribe process may be used to cleanly remove a mask layer, organic and inorganic dielectric layers, and device layers. The laser etch process may then be terminated upon exposure of, or partial etch of, the wafer or substrate. In embodiments, a multi-plasma etching approach is employed to dice the wafers where an isotropic etch is employed to improve the die sidewall following an anisotropic etch. The isotropic etch removes anisotropic etch byproducts, roughness, and/or scalloping from the anisotropically etched die sidewalls after die singulation.

Abstract: Methods of dicing substrates by both laser scribing and plasma etching. A method includes laser ablating material layers, the ablating leading with a first irradiance and following with a second irradiance, lower than the first. Multiple passes of a beam adjusted to have different fluence level or multiple laser beams having various fluence levels may be utilized to ablate mask and IC layers to expose a substrate with the first fluence level and then clean off redeposited materials from the trench bottom with the second fluence level. A laser scribe apparatus employing a beam splitter may provide first and second beams of different fluence from a single laser.

Abstract: Methods of dicing substrates having a plurality of ICs. A method includes forming a multi-layered mask comprising a first mask material layer soluble in a solvent over the semiconductor substrate and a second mask material layer, insoluble in the solvent, over the first mask material layer. The multi-layered mask is patterned with a laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the substrate between the ICs. The substrate is then plasma etched through the gaps in the patterned mask to singulate the IC with the second mask material layer protecting the first mask material layer for at least a portion of the plasma etch. The soluble material layer is dissolved subsequent to singulation to remove the multi-layered mask.

Abstract: Systems and methods are provided for scribing wafers with short laser pulses so as to reduce the ablation threshold of target material. In a stack of material layers, a minimum laser ablation threshold based on laser pulse width is determined for each of the layers. The highest of the minimum laser ablation thresholds is selected and a beam of one or more laser pulses is generated having a fluence in a range between the selected laser ablation threshold and approximately ten times the selected laser ablation threshold. In one embodiment, a laser pulse width in a range of approximately 0.1 picosecond to approximately 1000 picoseconds is used. In addition, or in other embodiments, a high pulse repetition frequency is selected to increase the scribing speed. In one embodiment, the pulse repetition frequency is in a range between approximately 100 kHz and approximately 100 MHz.

Abstract: A laser processing method which can efficiently perform laser processing while minimizing the deviation of the converging point of a laser beam in end parts of an object to be processed is provided.

Abstract: Laser and plasma etch wafer dicing using UV-curable adhesive films. A mask is formed covering ICs formed on the wafer, as well as any bumps providing an interface to the ICs. The semiconductor wafer is coupled to a carrier substrate by a double-sided UV-curable adhesive film. The mask is patterned by laser scribing to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer, below thin film layers from which the ICs are formed. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the ICs. The UV-curable adhesive film is partially cured by UV irradiation through the carrier. The singulated ICs are then detached from the partially cured adhesive film still attached to the carrier substrate, for example individually by a pick and place machine. The UV-curable adhesive film may then be further cured for the film's complete removal from the carrier substrate.

Abstract: A laser processing method for preventing particles from occurring from cut sections of chips obtained by cutting a silicon wafer is provided. An irradiation condition of laser light L for forming modified regions 77 to 712 is made different from an irradiation condition of laser light L for forming the modified regions 713 to 719 such as to correct the spherical aberration of laser light L in areas where the depth from the front face 3 of a silicon wafer 11 is 335 ?m to 525 ?m. Therefore, even when the silicon wafer 11 and a functional device layer 16 are cut into semiconductor chips from modified regions 71 to 719 acting as a cutting start point, twist hackles do not appear remarkably in the areas where the depth is 335 ?m to 525 ?m, whereby particles are hard to occur.

Abstract: A processing method for etching a workpiece is disclosed. While etching gas is supplied into an etching chamber in which a workpiece held on a holding face of a holding table is accommodated, a laser beam of a wavelength having a transparency through the holding table and the workpiece is irradiated upon the workpiece from the opposite side to the holding face of the holding table such that the focal point of the laser beam is positioned in the inside of a processing region of the workpiece to excite the processing region to induce etching.

Abstract: In accordance with some embodiments, a method for using SSLE to create one or more wafers from a material is provided, the method comprising: using a laser light beam to etch pits in the material to create one or more layers of etch pits in a subsurface of the material; and dividing the material into one or more individual wafers with an etch. In accordance with some embodiments, a system for using SSLE to create one or more wafers from a material is provided, the system comprising: a controller for controlling the position of a focal point of a laser light beam with respect to the material and causing an irradiation of the laser light beam at a plurality of focal points; and an etch for splitting the material into the one or more wafers based on the plurality of focal points.

Abstract: A method of cutting an object which can accurately cut the object is provided. An object to be processed 1 such as a silicon wafer is irradiated with laser light L while a light-converging point P is positioned therewithin, so as to form a modified region 7 due to multiphoton absorption within the object 1, and cause the modified region 7 to form a starting point region for cutting 8 shifted from the center line CL of the thickness of the object 1 toward the front face 3 of the object 1 along a line along which the object should be cut. Subsequently, the object 1 is pressed from the rear face 21 side thereof. This can generate a fracture from the starting point region for cutting 8 acting as a start point, thereby accurately cutting the object 1 along the line along which the object should be cut.

Abstract: To provide a simple method for manufacturing a semiconductor device in which deterioration in characteristics due to electrostatic discharge is reduced, a plurality of element layers each having a semiconductor integrated circuit and an antenna are sealed between a first insulator and a second insulator; a layered structure having a first conductive layer formed on a surface of the first insulator, the first insulator, the element layers, the second insulator, and a second conductive layer formed on a surface of the second insulator is formed; and the first insulator and the second insulator are melted, whereby the layered structure is divided so as to include at least one of the semiconductor integrated circuits and one of the antennas.

Abstract: A laser beam processing machine comprising a laser beam application means for applying a laser beam to a workpiece held on a chuck table, a processing-feed means, an indexing-feed means, a processing-feed amount detection means for detecting the amount of feed, an indexing-feed amount detection means, and a control means, wherein the condenser constituting the laser beam application means comprises an elliptic spot forming means for forming a focal spot into an elliptic shape and a focal spot turning means for turning the elliptic focal spot on an optical axis at the center thereof; and the control means comprises a storage means for storing the X, Y coordinate values of a processing line formed on the workpiece, obtains the X, Y coordinate values of the current position of a laser beam application position based on detection signals from the processing-feed amount detection means and the indexing-feed amount detection means, and controls the focal spot turning means to ensure that the long axis of the focal

Abstract: An improved method for singulation of compound electronic devices is presented. Compound electronic devices are manufactured by combining two or more substrates into an assembly containing multiple devices. Presented are methods for singulation of compound electronic devices using laser processing. The methods presented provide fewer defects such as cracking or chipping of the substrates while minimizing the width of the kerf and maintaining system throughput.

Abstract: Some embodiments of the present invention relate to a semiconductor device and a method of manufacturing a semiconductor device capable of preventing the deterioration of electrical characteristics. A p-type collector region is provided on a surface layer of a backside surface of an n-type drift region. A p+-type isolation layer for obtaining reverse blocking capability is provided at the end of an element. In addition, a concave portion is provided so as to extend from the backside surface of the n-type drift region to the p+-type isolation layer. A p-type region is provided and is electrically connected to the p+-type isolation layer. The p+-type isolation layer is provided so as to include a cleavage plane having the boundary between the bottom and the side wall of the concave portion as one side.

Abstract: An object to be processed is reliably cut along a line to cut. An object to be processed is irradiated with laser light while locating a converging point at the object, so as to form a modified region in the object along a line to cut. The object formed with the modified region is subjected to an etching process utilizing an etching liquid exhibiting a higher etching rate for the modified region than for an unmodified region, so as to etch the modified region. This can etch the object selectively and rapidly along the line to cut by utilizing a higher etching rate in the modified region.

Abstract: This laser processing method irradiates a substrate 4 with laser light L while locating a light-converging point P within the substrate 4, so as to form a quality modified region 71 to become a starting point region for cutting within the substrate 4 along a line to cut 5. Here, the laser light L is oscillated pulsewise along a desirable part RP in the line to cut 5, and continuously in a predetermined part RC in the line to cut 5. Consequently, the quality modified region 71 is formed within the substrate 4 along the desirable part RP in the line to cut 5, whereas no quality modified region 71 is formed within the substrate 4 along the predetermined part RC in the line to cut 5.

Abstract: A method for fabricating semiconductor components includes the steps of providing a semiconductor substrate having a circuit side, a back side and integrated circuits and circuitry on the circuit side; thinning the substrate from the back side to a selected thickness to form a thinned substrate; applying a dopant to the back side of the thinned substrate; and laser processing the back side of the thinned substrate to form a plurality of patterns of lasered features containing the dopant. The dopant can be selected to modify properties of the semiconductor substrate such as carrier properties, gettering properties, mechanical properties or visual properties.

Abstract: A semiconductor device has a semiconductor wafer with an interconnect structure formed over a first surface of the wafer. A trench is formed in a non-active area of the semiconductor wafer from the first surface partially through the semiconductor wafer. A protective coating is formed over the first surface and into the trench. A lamination tape is applied over the protective coating. A portion of a second surface of the semiconductor wafer is removed by backgrinding or wafer thinning to expose the protecting coating in the trench. A die attach film is applied over the second surface of the semiconductor wafer. A cut or modified region is formed in the die attach film under the trench using a laser. The semiconductor wafer is expanded to separate the cut or modified region of the die attach film and singulate the semiconductor wafer.

Abstract: A semiconductor device is manufactured by forming at least one epitaxial structure over a substrate. A portion of the substrate is cut and lifted to expose a partial surface of the epitaxial structure. A first electrode is then formed on the exposed partial surface to result in a vertical semiconductor device.

Abstract: A laser processing method which can highly accurately cut objects to be processed having various laminate structures is provided. An object to be processed comprising a substrate and a laminate part disposed on the front face of the substrate is irradiated with laser light L while a light-converging point P is positioned at least within the substrate, so as to form a modified region due to multiphoton absorption at least within the substrate, and cause the modified region to form a starting point region for cutting. When the object is cut along the starting point region for cutting, the object 1 can be cut with a high accuracy.

Abstract: Tailored laser pulse shapes are used for processing workpieces. Laser dicing of semiconductor device wafers on die-attach film (DAF), for example, may use different tailored laser pulse shapes for scribing device layers down to a semiconductor substrate, dicing the semiconductor substrate, cutting the underlying DAF, and/or post processing of the upper die edges to increase die break strength. Different mono-shape laser pulse trains may be used for respective recipe steps or passes of a laser beam over a scribe line. In another embodiment, scribing a semiconductor device wafer includes only a single pass of a laser beam along a scribe line using a mixed-shape laser pulse train that includes at least two laser pulses that are different than one another. In addition, or in other embodiments, one or more tailored pulse shapes may be selected and provided to the workpiece on-the-fly. The selection may be based on sensor feedback.

Abstract: Presented is a method for producing an optoelectronic component. The method includes separating a semiconductor layer based on a III-V-compound semiconductor material from a substrate by irradiation with a laser beam having a plateau-like spatial beam profile, where individual regions of the semiconductor layer are irradiated successively.

Abstract: A method of manufacturing a light emitting device: an LED wafer having an array of LEDs formed on a surface thereof, the method comprises: a) fabricating a sheet of phosphor/polymer material comprising a light transmissive polymer material having at least one phosphor material distributed throughout its volume and in which the polymer material is transmissive to light generated by the LEDs and to light generated by the at least one phosphor material; b) selectively making apertures through the phosphor/polymer sheet at positions corresponding to electrode contact pads of the LEDs of the LED wafer; c) attaching the sheet of phosphor/polymer material to the surface of the LED wafer such that each aperture overlies a respective electrode contact pad; and d) dividing the wafer into individual light emitting devices. The method can further comprise, prior to dividing the LED wafer, cutting slots through the phosphor/polymer material that are configured to pass between individual LEDs.

Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

Abstract: A workpiece dividing method for dividing a workpiece having an uneven incident surface upon which a pulsed laser beam falls. The workpiece dividing method includes a coating step of applying a coating member to the incident surface of the workpiece, thereby planarizing the incident surface of the workpiece, the coating member transmitting the pulsed laser beam and having a refractive index close to that of the workpiece for the pulsed laser beam, a modified layer forming step of applying the pulsed laser beam to the workpiece from the side of the incident surface in the condition where a focal point of the pulsed laser beam is set inside the workpiece after performing the coating step, thereby forming a modified layer inside the workpiece, and a dividing step of applying an external force to the workpiece after performing the modified layer forming step, thereby dividing the workpiece as starting from the modified layer formed inside said workpiece as a break start point.

Abstract: A method for fabricating semiconductor dice includes the steps of providing a wafer assembly having a substrate and semiconductor structures on the substrate; and defining the semiconductor dice on the substrate. The method also includes the step of separating the substrate from the semiconductor structures by applying a first laser pulse to each semiconductor die on the substrate having first parameters selected to break an interface between the substrate and the semiconductor structures and then applying a second laser pulse to each semiconductor die on the substrate having second parameters selected to complete separation of the substrate from the semiconductor structures. The method can also include the steps of forming one or more intermediate structures between the semiconductor dice on the substrate configured to protect the semiconductor dice during the separating step.

Abstract: An embodiment is a method and apparatus to induce flaw formation in nitride semiconductors. Regions of a thin film structure are selectively decomposed within a thin film layer at an interface with a substrate to form flaws in a pre-determined pattern within the thin film structure. The flaws locally concentrate stress in the pre-determined pattern during a stress-inducing operation. The stress-inducing operation is performed. The stress-inducing operation causes the thin film layer to fracture at the pre-determined pattern.

Abstract: Laser and plasma etch wafer dicing using UV-curable adhesive films is described. In an example, a method includes forming a mask above the semiconductor wafer. The semiconductor wafer is coupled to a carrier substrate by a UV-curable adhesive film. The mask covers and protects the integrated circuits. The mask is patterned with a laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to form singulated integrated circuits. The UV-curable adhesive film is then irradiated with ultra-violet (UV) light. The singulated integrated circuits are then detached from the carrier substrate.

Abstract: A laser processing apparatus comprises a converging lens 31 for converging processing laser light and rangefinding laser light L2 toward a wafer 1, an actuator for actuating the lens 31, a shaping optical system 49 for adding astigmatism to reflected light L3 of the rangefinding laser light, a quadrant photodiode 42 for receiving the reflected light L3 and outputting voltage values corresponding to its light quantities, and a controller for regulating the actuator, and positions a converging point P2 of the rangefinding laser light L2 between a focal point P0 of the lens and the lens 31, so as to make it possible to form a modified region at a position deeper from the front face 3, thereby suppressing adverse effects due to the reflected light L3. The control is based on an arithmetic value subjected to a division by a sum of the voltage values, so as to prevent the arithmetic value from being changed by the quantity of reflected light.

Abstract: The present disclosure is directed to an apparatus for the singulation of a semiconductor substrate or wafer. In some embodiments the singulation apparatus comprises a plurality of cutting devices. The cutting devices are configured to form multiple concurrent cutting lines in parallel on a surface of the semiconductor wafer. In some embodiments, the singulation apparatus comprises at least two dicing saws or laser modules. The disclosed singulation apparatus can dice the semiconductor wafer into individual chips by dicing in a direction across a complete circumferential edge of the wafer, thereby decreasing process time and increasing throughput.

Abstract: A method includes performing a laser grooving to remove a dielectric material in a wafer to form a trench, wherein the trench extends from a top surface of the wafer to stop at an intermediate level between the top surface and a bottom surface of the wafer. The trench is in a scribe line between two neighboring chips in the wafer. A polymer is filled into the trench and then cured. After the step of curing the polymer, a die saw is performed to separate the two neighboring chips, wherein a kerf line of the die saw cuts through a portion of the polymer filled in the trench.