Abstract: A light emitting diode includes a substrate, a first-type semiconductor layer, a nanorod layer and a transparent planar layer. The first-type semiconductor layer is disposed over the substrate. The nanorod layer is formed on the first-type semiconductor layer. The nanorod layer includes a plurality of nanorods and each of the nanorods has a quantum well structure and a second-type semiconductor layer. The quantum well structure is in contact with the first-type semiconductor layer, and the second-type semiconductor layer is formed on the quantum well structure. The transparent planar layer is filled between the nanorods. A surface of the second-type semiconductor layer is exposed out of the transparent planar layer.

Abstract: Semiconductor lasers, in particular Quantum Cascade Lasers (QCLs) are tuable especially in the mid-IR spectral range, e.g. in wavelengths of about 3-14 ?m, by precisely controlling the laser's temperature in the vicinity of the active region. The present invention introduces a novel design for locally heating the active region, thereby allowing fast heating and thus tuning a laser. It is generally applicable for lasers across the field, e.g. to QCLs with multi-color emitters or to Vertical-Cavity Single-Emitter Lasers (VCSELs) or to Distributed Feedback (DFB) lasers. Essentially, the invention consists of structurally integrating a heating resistor as part of the laser, placed close to the component to be temperature-controlled, i.e. the active region or the grating, etc., and feeding this resistor with a variable electrical current in order to locally control the thermal dissipation.

Abstract: The present invention is a method for producing a light-emitting device whose p contact layer has a p-type conduction and a reduced contact resistance with an electrode. On a p cladding layer, by MOCVD, a first p contact layer of GaN doped with Mg is formed. Subsequently, after lowering the temperature to a growth temperature of a second p contact layer being formed in the subsequent process, which is 700° C., the supply of ammonia is stopped and the carrier gas is switched from hydrogen to nitrogen. Thereby, Mg is activated in the first p contact layer, and the first p contact layer has a p-type conduction. Next, the second p contact layer of InGaN doped with Mg is formed on the first p contact layer by MOCVD using nitrogen as a carrier gas while maintaining the temperature at 700° C. which is the temperature of the previous process.

Abstract: According to one embodiment, a method for fabricating a stacked nitride-compound semiconductor structure includes forming a first protection film on a second surface of a substrate, forming a first nitride-compound semiconductor layer on the first surface of the substrate, forming a second protection film on the first nitride-compound semiconductor layer, removing the first protection film to expose the second surface of the substrate, forming a second nitride-compound semiconductor layer on the second surface of the substrate, and removing the second protection film to expose the first surface of the second nitride-compound semiconductor layer.

Abstract: A nitride semiconductor device according to the present invention includes a p-type nitride semiconductor layer, an n-type nitride semiconductor layer, and an active layer interposed between the p-type nitride semiconductor layer and the n-type nitride semiconductor layer. The p-type nitride semiconductor layer includes: a first p-type nitride semiconductor layer containing Al and Mg; and a second p-type nitride semiconductor layer containing Mg. The first p-type nitride semiconductor layer is located between the active layer and the second p-type nitride semiconductor layer, and the second p-type nitride semiconductor layer has a greater band gap than a band gap of the first p-type nitride semiconductor layer.

Abstract: An ink jet device includes: an ink jet head including a nozzle through which ink droplet is ejected by applying voltage to piezoelectric element; and an ejection control unit controlling ink droplet ejection amount by varying voltage, voltage waveform of the voltage includes: preliminary vibration wave form part for preliminary drive operation of pushing ink toward outer edge of the nozzle to the extent that the droplet is not ejected; and main vibration waveform part for main drive operation of ejecting the droplet through the nozzle after the preliminary drive operation, the ejection control unit performs the preliminary and main drive operations according to the preliminary vibration waveform part and the main vibration waveform part, respectively, and proportion of displacement amount X of the voltage for the preliminary drive operation to displacement amount Y of the voltage for the main drive operation is set to 20%?X/Y?40%.

Abstract: A device includes a first electrode, an organic layer disposed over the first electrode and a second electrode disposed over the organic layer. The second electrode includes a first conductive layer, a first separation layer disposed over the first conductive layer, and a second conductive layer disposed over the first separation layer, wherein the first separation layer is not a continuous layer and the first and second conductive layers are bridged where the first separation layer is not continuous. The first separation layer has an extinction coefficient that is at least 10% different from the extinction coefficient of the first conductive layer at wavelength 500 nm, or an index of refraction that is at least 10% different from the index of refraction of the first conductive layer at wavelength 500 nm.

Abstract: According to one embodiment, a semiconductor light emitting device includes a stacked structure body and an electrode. The stacked structure body has a first conductivity type first semiconductor layer including a nitride-based semiconductor, a second conductivity type second semiconductor layer including a nitride-based semiconductor, and a light emitting layer provided between the first and second semiconductor layers. The electrode has first, second and third metal layers. The first metal layer is provided on the second semiconductor layer and includes silver or silver alloy. The second metal layer is provided on the first metal layer and includes at least one element of platinum, palladium, rhodium, iridium, ruthenium, osmium. The third metal layer is provided on the second metal layer. A thickness of the third metal layer along a direction from the first toward the second semiconductor layer is equal to or greater than a thickness of the second metal layer.

Abstract: A method of manufacturing an ink for forming a functional layer includes: dispersing a mixture in which a low molecular material and a high molecular material are mixed in a poor solvent; and dissolving the mixture by adding a good solvent to the poor solvent in which the mixture is dispersed, in which a volume ratio of the poor solvent is from 10% to 70% with respect to the total volume in which the good solvent is added to the poor solvent and the poor solvent and the good solvent can be mixed.

Abstract: An organic electronic device comprising an anode, a cathode, a semiconducting layer between the anode and the cathode and a hole transporting layer between the anode and the semiconducting layer, the hole-transporting layer comprising a co-polymer comprising repeat units of formula (I) and one or more co-repeat units: (I) wherein: Ar1 independently in each occurrence represents a fused aryl or fused heteroaryl group that may be unsubstituted or substituted with one or more substituents; Ar2 represents an aryl or heteroaryl group that may be unsubstituted or substituted with one or more substituents; R independently in each occurrence represents a substituent; and m is 1 or 2, preferably 1; and each Ar1 is directly bound to an aromatic or heteroaromatic group of a co-repeat unit.

Abstract: An organic EL element with a functional layer including at least a hole injection layer, a hole transport layer, and a luminescence layer laminated from a pixel electrode side in order between a pixel electrode as an anode and a counter electrode as a cathode, and a method of manufacturing the organic EL element has a forming process by applying a solution including a low molecular material and a high molecular material to at least one layer among the hole injection layer, the hole transport layer, and luminescence layer, in which the molecular weight of low molecular material is 10,000 or less and the molecular weight of high molecular material is 10,000 to 300,000, and in which a mixing ratio of low molecular material is 10 wt % to 90 wt % with respect to the weight of low molecular material and high molecular material included in the solution.

Abstract: Light emitted within an organic EL device is effectively utilized, and a pixel is provided for improving the extraction efficiency of the light. Light extraction is efficiency is improved without increasing a current by effectively utilizing guided wave light which is a cause of the loss of light emitted by an organic EL device. In order to achieve this, a stepped portion is arrange in an insulating layer provided over a lower layer of a first electrode including a light reflecting surface, and a peripheral area of the first electrode is formed so as to contact the stepped portion. The reflecting surface is formed curved towards a second electrode side in the peripheral area of the first electrode from the stepped portion, light guided through the organic EL layer is reflected by the reflecting surface and emitted from the second electrode side.

Abstract: Provided herein is an organic light-emitting device and a method of construction thereof. The organic light-emitting device comprises an anode, a cathode, and at least two light-emitting layers located between the anode and the cathode. At least one of the light-emitting layers comprises a host compound having distributed therein a first compound capable of phosphorescent emission at room temperature and a second compound capable of phosphorescent emission at room temperature that has a peak emission wavelength at least 10 nm higher than the first compound.

Abstract: A method of manufacturing an Organic Light Emitting Diode (OLED) pixel is disclosed. The method includes forming an anode and forming a pixel definition layer. The pixel definition layer includes a first sub-pixel area, a second sub-pixel area, a third sub-pixel area corresponding to the third sub-pixel, and a pixel spacing area. The first sub-pixel, the second sub-pixel and the third sub-pixel are separated from each other by the pixel spacing area. The method also includes coating a long-chain fatty acid ester layers on the pixel spacing area, the second sub-pixel area, and the third sub-pixel area, coating light emitting layers on the sub-pixel areas and on the long-chain fatty acid ester layers, and ashing the substrate and removing the long-chain fatty acid ester layers to form light emitting patterns. The method also includes forming a cathode.

Abstract: The present invention addresses the problem of providing an organic electroluminescent lighting device in which it is difficult for an organic light emitting film to be scratched.

Abstract: An organic light emitting display apparatus including a plurality of sub-pixels disposed on a substrate, wherein each of the sub-pixels includes: a first electrode formed on the substrate; an intermediate layer formed on the first electrode and including an organic emission layer; and a second electrode formed on the intermediate layer, wherein at least one sub-pixel for emitting light of a color among the sub-pixels includes a shadow emission layer for emitting light of different color between the organic emission layer and the first electrode, and the organic emission layer of the one sub-pixel includes a hole transport material.

Abstract: A selective organic emissive material deposition technique is disclosed. A charged organic emissive material may be mixed with a carrier gas and ejected towards a charged intended area of a substrate. The charge for the emissive material may be such that the organic emissive material is attracted to the charged intended area of the substrate and, accordingly, deposited selectively over the charged intended area of the substrate. Additionally, surrounding unintended areas of the substrate may be charged such that the charged organic emissive material is repelled by the unintended areas.

Abstract: The present invention relates to a horizontal LED device and a method of manufacturing the same. More particularly, the present invention relates to a high-power and high-efficiency horizontal LED device manufactured using the advantages of conventional horizontal and vertical LEDs, and a method of manufacturing the same.

Abstract: A composition formed of a mixture of two compounds having similar thermal evaporation properties that are pre-mixed into an evaporation source that can be used to co-evaporate the two compounds into an emission layer in OLEDs via vacuum thermal evaporation process is disclosed.

Abstract: A composition formed of a first mixture of a first compound and a second compound wherein the first compound has different chemical structure than the second compound; the first compound is capable of functioning as a hole transporting material in an organic light emitting device at room temperature; the first compound comprises at least one carbazole group; the first compound has a evaporation temperature T1 of 150 to 350° C.; the second compound has evaporation temperature T2 of 150 to 350° C.; the absolute value of T1?T2 is less than 20° C.; the first compound having a concentration C1 in said first mixture, and the first compound having a concentration C2 in a film formed by evaporating the first mixture in a vacuum deposition tool at a constant pressure between 1×10?6 Torr to 1×10?9 Torr, at a 2 ?/sec deposition rate on a surface positioned at a predefined distance away from the mixture being evaporated; and wherein the absolute value of (C1?C2)/C1 is less than 5%.

Abstract: Disclosed is a production method for an organic electroluminescent element that is provided with a substrate, an organic laminate with an organic light emitting layer that was formed by a method involving a wet process, and a pair of electrodes, wherein the method produces an organic electroluminescent element with high luminous efficiency, low driving voltage, and a minimal rise in voltage when continuously driven, by applying the coating liquid for said organic light emitting layer, and thereafter, in a drying process, heating the substrate while applying tension in a manner such that a stress that is less than the yield stress is applied to the substrate.

Abstract: In a semiconductor light emitting element outputting light indicating green color by using a group III nitride semiconductor, light emission output is improved. A semiconductor light emitting element includes: an n-type cladding layer containing n-type impurities (Si); a light emitting layer laminated on the n-type cladding layer; and a p-type cladding layer containing p-type impurities and laminated on the light emitting layer. The light emitting layer has a barrier layer including first to fifth barrier layers and a well layer including first to fourth well layers, and has a multiple quantum well structure to sandwich one well layer by two barrier layers. The light emitting layer is configured such that the first to fourth well layers are set to have a composition to emit green light, and the first barrier layer is doped with n-type impurities, whereas the other barrier layers are not doped with n-type impurities.

Abstract: The present invention provides a method for manufacturing an organic light-emitting device capable of simply manufacturing the organic light-emitting device without requiring a vacuum atmosphere. The manufacturing method of the present invention includes: a step of preparing a supporting substrate having an organic electroluminescent element formed thereon, the organic electroluminescent element containing an anode, a light-emitting layer, an electron injection layer made by forming a film with a solution containing an ionic polymer, and a cathode; and a step of laminating the supporting substrate and a sealing member to one another so as to seal the organic electroluminescent element.

Abstract: A light emitting diode includes a substrate, an un-doped GaN layer, a plurality of carbon nanotubes, an N-type GaN layer, an active layer formed on the N-type GaN layer, and a P-type GaN layer formed on the active layer. The substrate includes a first surface and a second surface opposite and parallel to the first surface. A plurality of convexes is formed on the first surface of the substrate. The un-doped GaN layer is formed on the first surface of the substrate. The plurality of carbon nanotubes is formed on an upper surface of the un-doped GaN layer. The plurality of carbon nanotubes is spaced from each other to expose a portion of the upper surface of the un-doped GaN layer. The N-type GaN layer is formed on the exposed portion of the upper surface of the un-doped GaN layer and covering the carbon nanotubes therein.

Abstract: In an organic EL panel, a transparent conductive film, a functional layered body including at least one light-emitting layer, and an opposing electrode film are layered in this order on a substrate, and the light-emitting layer which overlaps the transparent conductive film and the opposing electrode film serves as a light-emitting portion. The organic EL panel has at least one auxiliary electrode that is formed on the substrate below the light-emitting portion and directly covered with the transparent conductive film. The transparent conductive film has a film thickness more than that of the auxiliary electrode and the side surface of the transparent conductive film is covered with the functional layered body.

Abstract: Organic electroluminescent element capable of conveniently and precisely establishing the emission color of the element. The organic electroluminescent element includes a pair of electrodes and a light-emitting layer provided between the electrodes and presents an emission color at the coordinate Ao (Xo, Yo) in CIE 1931 chromaticity coordinate system. The light-emitting layer contains in the same layer, a light emitting material A1 that presents an emission color at the coordinate A1 (x1, y1) in the CIE 1931 chromaticity coordinate system and a light emitting material A2 that presents an emission color at the coordinate A2 (x2, y2) in the CIE 1931 chromaticity coordinate system; a distance LAo-A1 between the coordinates Ao (Xo, Yo) and A1 (x1, y1) in the CIE 1931 chromaticity coordinate system satisfies LAo-A1?0.20; and a distance LA1-A2 between the coordinates A1 (x1, y1) and A2 (x2, y2) in the CIE 1931 chromaticity coordinate system satisfies 0.13?LA1-A2?0.35 s.

Abstract: According to one embodiment, a semiconductor light emitting device includes an n-type layer, a light emitting layer, a p-type layer, and a transparent electrode. The n-type layer includes a nitride semiconductor and has a thickness not more than 500 nm. The light emitting layer is provided on the n-type layer. The p-type layer is provided on the light emitting layer and includes a nitride semiconductor. The transparent electrode contacts the n-type layer. The n-type layer is disposed between the transparent electrode and the light emitting layer.

Abstract: Ink compositions for forming active layers in an organic light-emitting diode are provided. Also provided are methods of forming active layers of an OLED using the ink compositions. The ink compositions comprise a solvent system in which a substantial majority of the solvent is comprised of one or more ester compounds.

Abstract: A deposition apparatus includes a substrate combining unit configured to dispose a substrate on a moving unit including a surface, a first blocking member combining unit configured to raise a first blocking member, a first deposition unit including one or more deposition assemblies configured to deposit a material on the substrate, a first blocking member separation unit configured to separate the first blocking member downward from the moving unit, and a first conveyer unit configured to convey the moving unit in a first direction, where the one or more deposition assemblies are spaced apart from the substrate by a predetermined distance so that the material is deposited on the substrate in the first deposition unit while the moving unit is conveyed in the first direction.

Abstract: The present invention generally relates to cathode buffer materials and devices and methods comprising the cathode buffer materials.

Abstract: This invention generally relates to an optoelectronic device and a method of fabricating such a device, and more particularly to an optoelectronic device comprising an anode layer, a semiconductive layer provided over the anode layer, and a cathode layer provided over the semiconductive layer, the anode layer comprising a plurality of electrically conductive tracks connected together and spaced apart from one another with gaps therebetween, the device further comprising a first and one or more further hole injection layers provided between the anode layer and the semiconductive layer and extending across said gaps, wherein the first hole injection layer has a conductivity greater than the conductivity of the one or more further hole injection layers.

Abstract: A manufacturing method including: forming a first electrode; forming a first bank; forming a first organic functional film; forming a second bank; forming a second organic functional film; and forming a second electrode. In the forming of the second bank, the second bank is formed such that, in plan view, a bottom edge of a sidewall surface of the second bank facing the second aperture is located at the same position as or is set back from a bottom edge of a sidewall surface of the first bank facing the first aperture. In the forming of the second organic functional film, the droplet of the second ink is applied such that an upper edge of the second organic functional film within the second aperture is located at a same level as or at a higher level than the bottom edge of the sidewall surface of the second bank.

Abstract: An LED die includes a substrate, a first buffer layer, a second buffer layer, a plurality of nanospheres, a first semiconductor layer, an active layer and a second semiconductor layer. The first buffer layer, the second buffer layer, the first semiconductor layer, the active layer and the second semiconductor layer are formed successively on the substrate. The substrate has a plurality of protrusions formed on a surface thereof. The nanospheres are located on the first buffer layer formed on the protrusions and covered by the second buffer layer. The present disclosure also provides a method of manufacturing an LED die.

Abstract: An organic EL element comprises: a substrate; a first electrode formed at one surface side of the substrate; a second electrode opposing the first electrode; and an organic EL layer located between the first and second electrodes. In the organic EL element, the second electrode is a transparent electrode, and the first electrode is a reflecting electrode. The organic EL element is a top-emission type. The first electrode comprises a plurality of nanometer-size (nanometer-order) columnar structures formed on the above-mentioned one surface of the substrate, and each of the plurality of columnar structures has a metallic surface as the outermost surface.

Abstract: A chemical vapor deposition apparatus includes: a reaction chamber including an inner tube having a predetermined volume of an inner space, and an outer tube tightly sealing the inner tube; a wafer holder disposed within the inner tube and on which a plurality of wafers are stacked at predetermined intervals; and a gas supply unit including at least one gas line supplying an external reaction gas to the reaction chamber, and a plurality of spray nozzles communicating with the gas line to spray the reaction gas to the wafers, whereby semiconductor epitaxial thin films are grown on the surfaces of the wafers, wherein the semiconductor epitaxial thin film grown on the surface of the wafer includes a light emitting structure in which a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer are sequentially formed.

Abstract: An LED includes a substrate and a semiconductor structure mounted on the substrate. A plurality of first holes and a plurality of second holes are defined in the semiconductor structure. The second holes are located above the first holes and communicate with the first holes. A method for manufacturing the LED is also provided.

Abstract: The inventive concept provides semiconductor laser devices and methods of fabricating the same. According to the method, a silicon-crystalline germanium layer for emitting a laser may be formed in a selected region by a selective epitaxial growth (SEG) method. Thus, surface roughness of both ends of a Fabry Perot cavity formed of the silicon-crystalline germanium layer may be reduced or minimized, and a cutting process and a polishing process may be omitted in the method of fabricating the semiconductor laser device.

Abstract: Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.

Abstract: A method of manufacturing a nitride nanoparticle comprises manufacturing the nitride nanostructure from constituents including: a material containing metal, silicon or boron, a material containing nitrogen, and a capping agent having an electron-accepting group for increasing the quantum yield of the nitride nanostructure. Nitride nanoparticles, for example nitride nanocrystals, having a photoluminescence quantum yield of at least 1%, and up to 20% or greater, may be obtained.

Abstract: An organic EL display device (10) includes: an insulating substrate (20); a first planarizing film (21) formed on the insulating substrate (20) and made of a resin; a first electrode (13) formed on the first planarizing film (21); an organic EL layer (17) formed on the first electrode (13); a second electrode (14) formed on the organic EL layer (17); and a second planarizing film (22) formed between the first electrode (13) and the first planarizing film (21), and covering the first planarizing film (21). The second planarizing film (22) is made of a resin having a lower hygroscopic property than the resin forming the first planarizing film (21).

Abstract: The present invention provides a Group III nitride semiconductor light-emitting device exhibiting improved light extraction performance. In the production method, a p cladding layer of p-AlGaN is formed by the MOCVD method on a light-emitting layer at a pressure of 30 kPa and with an Mg concentration of 1.5×1020/cm3. A plurality of regions with a nitrogen polarity is formed in the crystals with a Group III element polarity, and thus the p cladding layer has a hexagonal columnar concave and convex configuration on the surface thereof. Subsequently, a p contact layer of GaN is formed by the MOCVD method, in a film along the concave and convex configuration on the p cladding layer.

Abstract: Disclosed is a doped organic electroluminescent device, comprising the following structures laminated in succession: a conductive anode substrate, a hole injecting layer, a hole transportation layer, an electron barrier layer, a light-emitting layer, an electron transportation layer, an electron injecting layer and a cathode; and the material for the electron barrier layer is a hole transportation material doped with a cerium salt. The material for an electron barrier layer in such a doped organic electroluminescent device is a hole transportation material doped with a cerium salt which has a low work function of approximately ?2.0 eV and can effectively block electrons.

Abstract: A mold for transferring a fine pattern, suitable for producing a substrate having a concave-convex structure such as a diffraction grating, can be provided by a simple process and with a high throughput. A method for producing a mold for transferring a fine pattern includes: a step of coating a surface of a base member with a solution containing a block copolymer and polyalkylene oxide; a solvent phase-separation step of phase-separating the block copolymer under a presence of vapor of an organic solvent so as to obtain a block copolymer film of the block copolymer, the block copolymer film having a concave-convex structure on a surface thereof and a horizontal cylinder structure in an interior thereof; a step of stacking a metal layer by electroforming; and a step of releasing the base member having the concave-convex structure formed thereon from the metal layer.

Abstract: An organic light-emitting device includes at least an underlayer, a partition wall, and an organic film. The underlayer is disposed above a substrate. The partition wall covers a first part and surrounds a second part of the surface of the underlayer. The organic film includes organic material, is disposed in a recess formed by the partition wall surrounding the second part, and is in contact with the surface of the underlayer and a surface of the partition wall. The surface of the underlayer has a protruding portion that protrudes in an upward direction. The protruding portion is composed of a top surface and an inclined surface surrounding the top surface. The first part includes least the top surface and a portion of the inclined surface, and an inner edge of the partition wall is in contact with the inclined surface or a level portion of the surface of the underlayer.

Abstract: A system and method for continuous atomic layer deposition. The system and method includes a housing, a moving bed which passes through the housing, a plurality of precursor gases and associated input ports and the amount of precursor gases, position of the input ports, and relative velocity of the moving bed and carrier gases enabling exhaustion of the precursor gases at available reaction sites.

Abstract: A polymer comprising an optionally substituted repeat unit of formula (I): wherein R1 and R2 in each occurrence are independently selected from H or a substituent; R1 and R2 may be linked to form a ring; and A is an optionally substituted linear, branched or cyclic alkyl group.

Abstract: A method for producing an organic EL device and the organic EL device, capable of enhancing reliability of the organic EL device by suppressing peeling caused by stress concentration to each layer end through reduction in the stress concentration even in the case of using a roll-to-roll process. The method includes: supplying a substrate from a delivery roll to a wind-up roll; forming a first electrode layer over the substrate; forming an organic EL layer over the first electrode layer; and forming a second electrode layer over the organic EL layer. The first electrode layer s formed using a shadow mask. At least a part of a side surface of the first electrode layer is a tapered surface of inwardly sloping from a lower side toward an upper side. An angle formed between the tapered surface and the surface of the substrate on the side over which the first electrode layer is formed is 1° or less.

Abstract: A donor substrate for transfer is disclosed. In some embodiments, the donor substrate for transfer includes a base layer, a light-heat conversion layer on the base layer, an intermediate layer on the light-heat conversion layer, and a transfer layer on the intermediate layer, in which the intermediate layer includes a transfer part and a non-transfer part, and in the transfer part and the non-transfer part, surface roughness of the intermediate layer is in a range of 30 nanometers or more and 1 micrometer or less. Methods of manufacturing an organic light emitting diode display are also disclosed.

Abstract: A first electrode, an intrinsic first compound semiconductor layer over the first electrode, a second compound semiconductor layer whose band gap is smaller than that of the first compound semiconductor layer on the first compound semiconductor layer, and a second electrode over the second compound semiconductor layer are provided.

Abstract: Methods of fabricating a device having laterally patterned first and second sub-devices, such as subpixels of an OLED, are provided. Exemplary methods may include depositing via organic vapor jet printing (OVJP) a first organic layer of the first sub-device and a first organic layer of the second sub-device. The first organic layer of the first sub-device and the first organic layer of the second sub-device are both the same type of layer, but have different thicknesses. The type of layer is selected from an ETL, an HTL, an HIL, a spacer and a capping layer.