Abstract: In one aspect, optoelectronic devices are described herein. In some embodiments, an optoelectronic device comprises a fiber core, a radiation transmissive first electrode surrounding the fiber core, at least one photosensitive inorganic layer surrounding the first electrode and electrically connected to the first electrode, and a second electrode surrounding the inorganic layer and electrically connected to the inorganic layer. In some embodiments, the device comprises a photovoltaic cell.

Abstract: A manufacturing method for a solar cell having improved output characteristics is provided. After forming a p-side transparent conductive oxide layer (15), an n-side transparent conductive oxide layer (16) is formed.

Abstract: A thin film solar cell is disclosed comprising the following layers deposited on a substrate: a microcrystalline p- or n-layer, an intermediate microcrystalline silicon i-layer applied by a hot-wire chemical-vapor deposition (HWCVD) method on the microcrystalline p- or n-layer a), an additional i-layer of microcrystalline silicon, which is formed by depositing on the intermediate microcrystalline silicon i-layer, by a plasma enhanced chemical vapor deposition (PECVD), a sputtering process, or a photo-CVD method whereby layers b) and c) together form an i-layer, and if a p-layer is present as the layer of step a), an n-layer, and if an n-layer is present as the layer of step a), a p-layer that is either microcrystalline or amorphous.

Abstract: A method for manufacturing a solar cell (100) includes the steps of: a step of cleaning an exposed region (R2) on a rear surface of an n-type crystalline silicon substrate (10n), wherein the step is carried out subsequent to a step of patterning an i-type amorphous semiconductor layer (11i) and a p-type amorphous semiconductor layer (11p) and prior to a step of forming an i-type amorphous semiconductor layer (12i).

Abstract: A thin film photovoltaic device on a substrate is being realized by a method for manufacturing a p-i-n junction semiconductor layer stack with a p-type microcrystalline silicon layer, a p-type amorphous silicon layer, a buffer silicon layer comprising preferably intrinsic amorphous silicon, an intrinsic type amorphous silicon layer, and an n-type silicon layer over the intrinsic type amorphous silicon layer.

Abstract: The present invention is a solar cell 500 comprising the substrate 510 made of a crystalline semiconductor, an i-type semiconductor layer 520a and an i-type semiconductor layer 520b each made of an amorphous semiconductor, and a first-conductivity type semiconductor layer 530 and a second-conductivity type semiconductor layer 540 each made of an amorphous semiconductor, in which by catalytic chemical vapor deposition in which catalyzers decompose raw gas when being heated by receiving an electric current, the i-type semiconductor layer 520a is formed on the principle plane 515a by the catalyzer placed at the position facing the principle plane 515a, the i-type semiconductor layer 520b is formed on the principle plane 515b by the catalyzer placed at the position facing the principle plane 515b are formed on the i-type semiconductor layer 520a and the i-type semiconductor layer 520b on the substrate 510.

Abstract: A printable medium is proposed, such as can be used, for example, during the production of metal contacts for silicon solar cells which are covered with a passivation layer on a surface of a silicon substrate. A corresponding production method and a correspondingly produced solar cell are also disclosed. The printable medium contains at least one medium that etches the passivation layer and metal particles such as nickel particles, for example. By locally applying the printable medium to the passivation layer and subsequent heating, the passivation layer can be opened locally with the aid of the etching medium. As a result, the nickel particles can form a mechanical and electrical contact with the substrate surface, preferably with the formation of a nickel silicide layer. The printable medium and the production method made possible therewith are cost-effective owing to the use of nickel particles, for example, and allow both good electrical contact and avoidance of undesirable high-temperature steps.

Abstract: A photovoltaic device (10) is provided with: an n-type monocrystalline silicon substrate (21); an IN layer (25) layered over one surface of the n-type monocrystalline silicon substrate (21); an IP layer (26) layered over a region, of one surface of the IN layer 25, where the IN layer (25) is not layered, and layered so as to have an overlap region (26*) which is overlapped with the region where the IN layer (25) is layered; an n-side electrode (40) electrically connected to the IN layer (25) and formed over the overlap region (26*); and a p-side electrode (50) formed distanced from the n-side electrode (40) and electrically connected to the IP layer (26). In the IP layer (26), a separation gap (60) is formed between a region where the n-side electrode (40) is formed and a region where the p-side electrode (50) is formed.

Abstract: There is provided a photovoltaic device (100) having a substrate (10), i-type amorphous layers (16i, 18i) formed over a region of at least a part of a back surface of the substrate, and an i-type amorphous layer (12i) formed over a region of at least a part of a light-receiving surface of the substrate (10); and characterized in that electrodes (24n, 24p) are provided on the back surface and no electrode is provided on the light-receiving surface, and an electrical resistance per unit area of the back surface side i-type amorphous layers is lower than an electrical resistance per unit area of the light-receiving surface side i-type amorphous layer.

Abstract: A photoelectric converter (10) is provided with an n-type monocrystalline silicon substrate (21), an IN layer (25) and an IP layer (26) formed on the rear surface (12) of the n-type monocrystalline silicon substrate (21), an n-side electrode (40) electrically connected to the IN layer (25), and a p-side electrode (50) separated from the n-side electrode (40) by means of a separation groove (6) and electrically connected to the IP layer (26). In said photoelectric converter (10), a texture structure is formed on at least a portion of a region in which the n-type monocrystalline silicon substrate (21), the IN layer (25) and the IP layer (26) are formed to be in direct contact with one another.

Abstract: A photovoltaic device is provided with: an i-type amorphous layer formed over a region of at least a part of a back surface of a semiconductor substrate; and an i-type amorphous layer formed over a region of at least a part of a light-receiving surface of the semiconductor substrate. No electrode is provided on the light-receiving surface, and an electrode is provided on the back surface. An electrical resistance per unit area of the i-type amorphous layer is lower than an electrical resistance per unit area of the i-type amorphous layer.

Abstract: This photoelectric conversion device (10) is provided with: an n-type monocrystalline silicon substrate (21); an IN layer (25) and an IP layer (26) formed on the back surface of the n-type monocrystalline silicon substrate (21); an n-side electrode (40) containing an n-side underlayer (43), an n-side primary conductive layer (44), and an n-side protective layer (45); and a p-side electrode (50) containing a p-side underlayer (53), a p-side primary conductive layer (54), and a p-side protective layer (55). The n-side primary conductive layer (44) is formed in a manner so as not to cover the lateral surface of the n-side underlayer (43), and is covered at the lateral surface by the n-side protective layer (45). The p-side electrode (50) is formed in such a manner the lateral surface of the p-side underlayer (53) is not covered, and the lateral surface is covered by the p-side protective layer (55).

Abstract: A photovoltaic device having a high conversion efficiency is produced in a stable manner. The conditions for film deposition of a microcrystalline silicon photovoltaic layer (4) in a photovoltaic device are set based on the Raman peak ratio within a Raman spectrum obtained at the substrate (1) side of the microcrystalline silicon layer (4), and the Raman peak ratio within a Raman spectrum obtained at the opposite side to the substrate (1).

Abstract: The purpose of the present invention is to favorably modify a transparent conductive film and provide a transparent conductive film with few grain boundaries. In the manufacturing method for the transparent conductive film of the present invention, a transparent conductive film 3 is formed on a substrate 2 inside a vacuum chamber 10, after which radiant heat is imparted from a surface modifying device 4 arranged near the substrate 2 to modify the transparent conductive film 3, and the substrate 2 having the modified transparent conductive film 3 is removed from the vacuum chamber 10.

Abstract: There is provided a method of producing a photovoltaic element comprising: a first step in which an i-type amorphous silicon layer (16) and an n-type amorphous silicon layer (14) are formed over a light-receiving surface of an n-type monocrystalline silicon substrate (18); a second step in which an i-type amorphous silicon layer (22a) and an n-type amorphous silicon layer (23a) are formed over a back surface of the n-type monocrystalline silicon substrate (18); and a third step in which, after the first step and the second step are completed, protection layers are formed over the n-type amorphous silicon layer (14) and the n-type amorphous silicon layer (23a).

Abstract: Methods for forming a photovoltaic device include depositing a p-type layer on a substrate and cleaning the p-type layer by exposing a surface of the p-type layer to a plasma treatment to react with contaminants. An intrinsic layer is formed on the p-type layer, and an n-type layer is formed on the intrinsic layer.

Abstract: A tandem thin-film silicon solar cell comprises a transparent substrate, a first unit cell positioned on the transparent substrate, the first unit cell comprising a p-type window layer, an i-type absorber layer and an n-type layer, an intermediate reflection layer positioned on the first unit cell, the intermediate reflection layer including a hydrogenated n-type microcrystalline silicon oxide of which the oxygen concentration is profiled to be gradually increased and a second unit cell positioned on the intermediate reflection layer, the second unit cell comprising a p-type window layer, an i-type absorber layer and an n-type layer.

Abstract: Disclosed are a thin film solar cell and a method of manufacturing the thin film solar cell. The thin film solar cell according to an exemplary embodiment of the present invention thin film solar cell includes a substrate: a front electrode layer formed on the substrate; an oxide layer formed on the front electrode layer: a light absorbing layer (intrinsic layer) formed on the oxide layer; and a back electrode layer formed on the light absorbing layer, wherein the oxide layer is formed of a material selected from MoO2, WO2, V2O5, NiO and CrO3.

Abstract: A method for manufacturing a solar cell is presented. The method includes: forming an amorphous silicon layer on a first surface of a light absorbing layer; doping the amorphous silicon layer with a dopant; forming a dopant layer by diffusing the dopant into the amorphous silicon layer with a laser; forming a semiconductor layer by removing the dopant that remains outside the dopant layer; etching the surface of the semiconductor layer by using an etchant; forming a first electrode on the semiconductor layer; and forming a second electrode on a second surface of the light absorbing layer.

Abstract: This invention aims to reduce and preferably to cancel the carrier collection limit effect in order to considerably encrease the conversion efficiency. This improvement is achieved by a suitable modification of the amorphized layer thickness or even by discontinuities separating amorphizing beams or amorphized nanopellets.

Abstract: A method for fabricating a thin film solar device that includes providing a substrate having a transparent conductive oxide (TCO) layer deposited on a surface of the substrate, the TCO layer having an as deposited sheet resistance. At least a portion of a surface of the TCO layer is exposed to a hydrogen plasma under conditions which result in a treated TCO layer having a reduced sheet resistance which is at least 10% less than the as deposited sheet resistance.

Abstract: A method for making a graphene/carbon nanotube composite structure includes providing a metal substrate including a first surface and a second surface opposite to the first surface, growing a graphene film on the first surface of the metal substrate by a CVD method, providing at least one carbon nanotube film structure on the graphene film, and combining the at least one carbon nanotube film structure with the graphene film, coating a polymer layer on the at least one carbon nanotube film structure, and combining the polymer layer with the at least one carbon nanotube film structure and the graphene film, and forming a plurality of stripped electrodes by etching the metal substrate from the second surface.

Abstract: In one aspect, optoelectronic devices are described herein. In some embodiments, an optoelectronic device comprises a fiber core, a radiation transmissive first electrode surrounding the fiber core, at least one photosensitive inorganic layer surrounding the first electrode and electrically connected to the first electrode, and a second electrode surrounding the inorganic layer and electrically connected to the inorganic layer. In some embodiments, the device comprises a photovoltaic cell.

Abstract: The present invention relates to a chemical etching method to electrically isolate the edge from the interior of a thin-film photovoltaic panel comprising a substrate and a photovoltaic laminate. The method comprises a step to dispense an etching paste comprising two or more acids on the laminate periphery; an optional step to apply heat to the laminate; and a step to remove the etching paste. The method is further characterized by the chemical removal of at least two chemically distinctive layers of the laminate at the periphery where the etching paste is applied. The method may be used to produce a thin-film photovoltaic panel.

Abstract: Improved methods for stripping photoresist and removing etch-related residues from dielectric materials are provided. In one aspect of the invention, methods involve removing material from a dielectric layer using a hydrogen-based etch process employing a weak oxidizing agent and fluorine-containing compound. Substrate temperature is maintained at a level of about 160° C. or less, e.g., less than about 90° C.

Abstract: The invention relates to a method for the precision processing of substrates, in particular for the microstructuring of thin layers, local dopant introduction and also local application of a metal nucleation layer in which a liquid-assisted laser, i.e. laser irradiation of a substrate which is covered in the regions to be processed by a suitable reactive liquid, is implemented.

Abstract: A method of forming a plurality of discrete, interconnected solar cells mounted on a carrier by providing a first semiconductor substrate; depositing on the first substrate a sequence of layers of semiconductor material forming a solar cell structure; forming a metal back contact layer over the solar cell structure; mounting a carrier on top of the metal back contact; removing the first substrate; and lithographically patterning and etching the solar cell structure to form a plurality of discrete solar cells mounted on the carrier.

Abstract: A solar cell according to an embodiment includes a semiconductor substrate; a first dopant layer formed at one surface of the semiconductor substrate; and a first electrode electrically connected to the first dopant layer. At least a part of the first dopant layer includes a pre-amorphization element, and a concentration of the pre-amorphization element in one portion of the first dopant layer is different from a concentration of the pre-amorphization element in another portion of the first dopant layer.

Abstract: A method for forming a photovoltaic device includes providing a substrate. A layer is deposited to form one or more layers of a photovoltaic stack on the substrate. The depositing of the amorphous layer includes performing a high power flash deposition for depositing a first portion of the layer. A low power deposition is performed for depositing a second portion of the layer.

Abstract: Systems and methods for site controlled crystallization are disclosed. According to one aspect, a method for forming a composite film is disclosed. In one example embodiment, the method includes forming a layer of amorphous material. The method also includes forming a layer of metal material on each of a plurality of selected regions of the layer of amorphous material to form a structure including the layer of metal material on the layer of amorphous material, and annealing the structure to generate metal-induced crystallization at the interface of the layer of metal material and each of the selected regions of the layer of amorphous material such that crystalline structures are formed.

Abstract: A semiconductor device 700 includes a substrate and an optical sensor unit 700 formed on the substrate for sensing light and for generating a sensing signal, the optical sensor unit 700 including a first thin film diode 701A for detection of light in a first wavelength range, a second thin film diode 701B detecting light in a second wavelength range that contains wavelengths longer than the longest wavelength in the first wavelength range. The first thin film diode 701A and the second thin film diode 701B are connected in parallel to each other. The sensing signal is generated based on the output from one of the first thin film diode 701A and the second thin film diode 701B. By this means, the wavelength range that can be detected by the optical sensor unit can be expanded and the sensing sensitivity can be increased.

Abstract: Provided is a method capable of easily manufacturing a back contact solar cell with high photoelectric conversion efficiency. A semiconductor layer having a first conductivity which is the same as that of a semiconductor substrate is formed substantially entirely on the principal surface of the semiconductor substrate inclusive of a surface of an insulation layer. A portion of the semiconductor layer located on the insulation layer is removed, and thereby an opening is formed. The insulation layer exposed through the opening is removed while the semiconductor layer is used as a mask, and thereby a surface of a first semiconductor region is partially exposed. Electrodes which are electrically connected to the surface of the first semiconductor region and to a surface of the semiconductor layer respectively are formed.

Abstract: A photo sensor, a method of manufacturing the photo sensor, and a display apparatus, the photo sensor including a substrate; a light receiving unit on the substrate, the light receiving unit including an amorphous semiconductor material; a first adjacent unit and a second adjacent unit formed as one body with the light receiving unit, the first adjacent unit and the second adjacent unit being separated from each other by the light receiving unit; a first photo sensor electrode electrically connected to the first adjacent unit; and a second photo sensor electrode electrically connected to the second adjacent unit, wherein at least one of the first adjacent unit and the second adjacent unit includes a crystalline semiconductor material.

Abstract: A method for the fabrication of a three-dimensional thin-film semiconductor substrate with selective through-holes is provided. A porous semiconductor layer is conformally formed on a semiconductor template comprising a plurality of three-dimensional inverted pyramidal surface features defined by top surface areas aligned along a (100) crystallographic orientation plane of the semiconductor template and a plurality of inverted pyramidal cavities defined by sidewalls aligned along the (111) crystallographic orientation plane of the semiconductor template. An epitaxial semiconductor layer is conformally formed on the porous semiconductor layer. The epitaxial semiconductor layer is released from the semiconductor template. Through-holes are selectively formed in the epitaxial semiconductor layer with openings between the front and back lateral surface planes of the epitaxial semiconductor layer to form a partially transparent three-dimensional thin-film semiconductor substrate.

Abstract: A material is manufactured from a single piece of semiconductor material. The semiconductor material can be an n-type semiconductor. Such a manufactured material may have a top layer with a crystalline structure, transitioning into a transition layer, further transitioning into an intermediate layer, and further transitioning to the bulk substrate layer. The orientation of the crystalline pores of the crystalline structure align in layers of the material. The transition layer or intermediate layer includes a material that is substantially equivalent to intrinsic semiconductor. Also described is a method for manufacturing a material from a single piece of semiconductor material by exposing a top surface to an energy source until the transformation of the top surface occurs, while the bulk of the material remains unaltered. The material may exhibit photovoltaic properties.

Abstract: According to one embodiment, a semiconductor light emitting device includes a substrate, a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a translucent electrode. The substrate includes a first region provided along periphery of a first major surface and a second region provided on center side of the first major surface as viewed from the first region. The first semiconductor layer is provided on the first major surface of the substrate. The light emitting layer is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting layer. The translucent electrode is provided on the second semiconductor layer. A reflectance in the second region is higher than a reflectance in the first region.

Abstract: A structure of X-ray detector includes a Si-rich dielectric material for serving as a photo-sensing layer to increase light sensitivity. The fabrication method of the X-ray detector including the Si-rich dielectric material needs less photolithography-etching processes, so as to reduce the total thickness of thin film layers and decrease process steps and cost.

Abstract: The present invention relates to cost effective production methods of high efficiency silicon based back-contacted back-junction solar panels and solar panels thereof having a multiplicity of alternating rectangular emitter- and base regions on the back-side of each cell, each with rectangular metallic electric finger conductor above and running in parallel with the corresponding emitter- and base region, a first insulation layer in-between the wafer and finger conductors, and a second insulation layer in between the finger conductors and cell interconnections.

Abstract: The present invention relates to cost effective production methods of high efficiency silicon based back-contacted back-junction solar panels and solar panels thereof having a multiplicity of alternating rectangular emitter- and base regions on the back-side of each cell, each with rectangular metallic electric finger conductor above and running in parallel with the corresponding emitter- and base region, a first insulation layer in-between the wafer and finger conductors, and a second insulation layer in between the finger conductors and cell interconnections.

Abstract: The invention provides for a semiconductor wafer with a metal support element suitable for the formation of a flexible or sag tolerant photovoltaic cell. A method for forming a photovoltaic cell may comprise providing a semiconductor wafer have a thickness greater than 150 ?m, the wafer having a first surface and a second surface opposite the first and etching the semiconductor wafer a first time so that the first etching reduces the thickness of the semiconductor wafer to less than 150 ?m. After the wafer has been etched a first time, a metal support element may be constructed on or over the first surface; and a photovoltaic cell may be fabricated, wherein the semiconductor wafer comprises the base of the photovoltaic cell.

Abstract: Disclosed is a method for manufacturing a crystalline silicon-based photoelectric conversion device having a first intrinsic silicon-based layer, a p-type silicon-based layer and a first transparent electroconductive layer, positioned in this order on one surface of a conductive single-crystal silicon substrate, and having a second intrinsic silicon-based layer, an n-type silicon-based layer and a second transparent electroconductive layer, positioned in this order on the other surface of the conductive single-crystal silicon substrate. In the present invention, a heat treatment is carried out after at least one of the transparent electroconductive layers is formed. This heat treatment is carried out at a temperature of less than 200° C. under a hydrogen-containing atmosphere.

Abstract: Disclosed is a photovoltaic device. The photovoltaic device includes: a first electrode and a second electrode; a first unit cell and a second unit cell which are placed between the first electrode and the second electrode and include a first conductive semiconductor layer, an intrinsic semiconductor layer and a second conductive semiconductor layer; and an intermediate reflector which is placed between the first unit cell and the second unit cell, and includes a hydrogenated amorphous carbon layer.

Abstract: A method and apparatus for manufacturing a multi-layered structure includes forming a crystalline layer of a material by depositing an amorphous layer of the material on a heated substrate.

Abstract: A method for forming single crystal or large-crystal-grain thin-film layers deposits a thin-film amorphous, nanocrystalline, microcrystalline, or polycrystalline layer, and laser-heats a seed spot having size on the order of a critical nucleation size of the thin-film layer. The single-crystal seed spot is extended into a single-crystal seed line by laser-heating one or more crystallization zones adjacent to the seed spot and drawing the zone across the thin-film layer. The single-crystal seed line is extended across the thin-film material layer into a single-crystal layer by laser-heating an adjacent linear crystallization zone and drawing the crystallization zone across the thin-film layer. Photovoltaic cells may be formed in or on the single-crystal layer. Tandem photovoltaic devices may be formed using one or several iterations of the method. The method may also be used to form single-crystal semiconductor thin-film transistors, such as for display devices, or to form single-crystal superconductor layers.

Abstract: In order to improve a thin film solar cell with an amorphous silicon absorber layer being in single or in tandem configuration, the addressed absorber layer of a-Si:H is manufactured by plasma enhanced vapor deposition in an RF-SiH4 plasma, wherein the deposition is performed at at least one of at the process pressure below 0.5 mbar and of at an RF power density below 370 W/14000 cm2.

Abstract: A method of forming thin film solar cell includes the following steps. A substrate is provided, and a plurality of first electrodes are formed on the substrate. A printing process is performed to print a light-absorbing material on the substrate and the first electrodes to form a plurality of light-absorbing patterns. Each of the light-absorbing patterns corresponds to two adjacent first electrodes, partially covers the two adjacent first electrodes, and partially exposes the two adjacent first electrodes. A plurality of second electrodes are formed on the light-absorbing patterns.

Abstract: A method for manufacturing a thin-film solar cell includes providing a first conducting layer on a substrate that has an area at least 0.75 m2. The first conducting layer is located in a deposition portion of the area. An ultraviolet laser beam is applied through a lens to the first conducting layer. Portions of the first conducting layer are scribed form a trench through the layer. The lens focuses the beam and has a focal length at least 100 mm. The focused beam includes an effective portion effective for the scribing and an ineffective portion ineffective for the scribing. The substrate sags and the first conducting layer remains in the effective portion of the focused beam across the area during the step of applying. One or more active layers are provided on the first conducting layer. A second conducting layer is provided on the one or more active layers.

Abstract: A solar cell includes a solar cell substrate including a principal surface on which a p-type surface and an n-type surface are exposed, a p-side electrode formed on the p-type surface and including a first linear portion linearly extending in a first direction, and an n-side electrode formed on the n-type surface and including a second linear portion linearly extending in the first direction and arranged next to the first linear portion in a second direction orthogonal to the first direction. Corners of a tip end of at least one of the first and second linear portions are formed in a chamfered shape.

Abstract: A method for manufacturing a solar cell according to an embodiment of the present invention includes preparing a semiconductor substrate having a first conductive type dopant; ion-implanting a pre-amorphization elements into a front surface of the semiconductor substrate to form an amorphous layer; and forming an emitter layer by ion-implanting second conductive type dopant into the front surface of the semiconductor substrate. The method then further includes heat-treating the layers to activate the second conductive type dopant. The method further includes forming a back surface field layer at a back surface of the semiconductor substrate by ion-implanting a first conductive type dopant.

Abstract: The present invention discloses a thin-film solar cell and a method for forming the same. The thin-film solar cell includes a substrate and a semiconductor layer containing a P-type crystalline silicon layer over the substrate, a first I-type crystalline silicon layer on the P-type crystalline silicon layer, a first N-type crystalline silicon layer on the first I-type crystalline silicon layer, a second I-type crystalline silicon layer on the first N-type crystalline silicon layer and a second N-type crystalline silicon layer on the second I-type crystalline silicon layer. Wherein, the semiconductor layer is formed with additional I-type and N-type crystalline silicon layers, thereby enhancing the photoelectric conversion efficiency of the thin-film solar cell.