Abstract: There is disclosed a grinding apparatus for fabrication of a liquid crystal display device that is adaptive for improving the adsorption defect of a substrate onto a substrate stage. A grinding apparatus for fabrication of a liquid crystal display device disclosed in the present invention includes a plurality of substrate stage configured to make a linearly bi-directional movement; first and second grinding parts disposed in a series at an area to which the substrate stage moves; first to third aligning parts disposed at both ends of the first and second grinding parts and therebetween; and first and second cleaning parts disposed between the first and second grinding parts and the first and second aligning parts so as to clean the substrate stage.

Abstract: Embodiments of the present invention relate to apparatus and method for improve uniformity of a polishing process. Embodiments of the present invention provide a heating mechanism configured to apply thermal energy to a perimeter of a substrate during polishing, or a cooling mechanism configured to cool a central region of the substrate during polishing, or a biased heating mechanism configured to create a temperature step differential on a given radius of a polishing pad.

Abstract: A retaining ring can be shaped by machining or lapping the bottom surface of the ring to form a shaped profile in the bottom surface. The bottom surface of the retaining ring can include flat, sloped and curved portions. The lapping can be performed using a machine that dedicated for use in lapping the bottom surface of retaining rings. During the lapping the ring can be permitted to rotate freely about an axis of the ring. The bottom surface of the retaining ring can have curved or flat portions.

Abstract: The present invention provides an apparatus capable of uniformly grinding an polishing pad. Further, the present invention provides a method of grinding an polishing pad by using the grinding apparatus.

Abstract: A polishing head for use in a polishing machine for optical surfaces, having an axis of rotation and a base body having a holding structure intended to be arranged at a polishing spindle and having a transport element intended to be held at a tool change arm, the transport element being positionable against a holding element of the tool change arm in order to perform a tool change, wherein at least one locking element is provided which can be positioned against the tool change arm such that a positive and/or non-positive joint results.

Abstract: An improved retaining ring used for chemical mechanical polishing of substrates, such as semiconductor wafers, to hold a substrate in place during the polishing process. The retaining rings are configured with inserts through which fasteners are positioned to securely affix the retaining ring to the polishing head. The inserts assist in dissipating the force of the fasteners, thereby allowing a more uniform polishing surface. The opening through which the fastener is positioned may be configured with concave or convex side walls to assist in dissipating the force of the fasteners during installation of the retaining ring or the polishing process.

Abstract: A system and method are provided for in-situ inspection optical inspection during a parallel polishing process. The method provides a polishing device with a spindle bit for holding a metallurgical sample, and a rotatable wheel having an inner diameter with a top surface for accepting a polishing compound and a transparent outer diameter. An optical system underlies the wheel outer diameter for recording images of the metallurgical sample. The method polishes the metallurgical sample against the wheel inner diameter. Without releasing the metallurgical sample from the spindle bit, the metallurgical sample is moved to a first position overlying the wheel outer diameter, and the metallurgical sample is optically inspected. In one aspect, the polishing device has a cleaning system overlying the wheel outer diameter, and the method sprays the wheel outer diameter with cleaning solution to support an in-situ inspection.

Abstract: A polishing pad, a polishing method and a method of forming a polishing pad are provided. The polishing pad includes a polishing layer and a plurality of arc grooves. The arc grooves are disposed in the polishing layer. Each of the arc grooves has two ends, and at least one end thereof has an inclined wall. The angle between the inclined wall of each groove and the surface plane of the polishing layer is less than 90 degree.

Abstract: Polishing liquids for activating and/or conditioning fixed abrasive polishing pads, and associated systems and methods are disclosed. A method in accordance with one embodiment of the invention includes disposing a polishing liquid on a polishing surface of a microfeature workpiece polishing pad. The polishing pad can include a matrix material and a plurality of abrasive elements fixedly distributed in the matrix material. The polishing liquid can include a plurality of particles that are at least approximately chemically inert with respect to the abrasive elements. In a particular embodiment, the particles can have a polymeric, non-ceramic composition. The method can further include moving at least one of the polishing pad and the plurality of particles relative to the other to remove deposits from the polishing pad. This operation can be performed serially or simultaneously with using the polishing pad to remove material from a microfeature workpiece.

Abstract: The present invention comprises of a process for lapping a high-throughput of ultra-flat wafers by utilizing a lapping apparatus containing a rotary flat, grooved polishing platen, at least two rotating pressurized heads each having a polishing wafer carrier that is adapted to receive a plurality of mounted wafers, and a plurality of concentric conditioning rings surrounding each pressurized head. The rotating pressurized heads are counterbalanced throughout the inventive process, and the lapping platen is continuously conditioned by simultaneously rotating the concentric conditioning rings over the lapping platen. This process allows continuous and controllable planarization thus allowing for a high throughput of wafers, while at the same time it prevents distortions in the lapping platen which reduces maintenance by providing continuous conditioning of the lapping platen.

Abstract: A polishing system includes a polishing pad with an aperture that extends through all layers of the polishing pad and a light transmissive film positioned on top of a light-generating or light-guiding element of an optical monitoring system.

Abstract: A two part retaining ring is described. An rigid upper portion has an annular recess along its inner diameter. An annular wearable lower portion has an inner diameter, an annular extension defined by the inner diameter and a vertical wall that is perpendicular to a surface of the second portion and opposite to the inner diameter. The annular extension fits into the annular recess of the annular first portion. A bonding material is on the vertical wall of the annular second portion.

Abstract: Provided is a polishing apparatus comprising a lower stool (12), a motor (18a) and a speed reducer (19a) for driving the lower stool, and a box (17) for covering at least the portion of the lower stool below the working action face. The polishing apparatus polishes a wafer by forcing the wafer to contact the lower stool and by rotating the lower stool. The box has its inside separated by partitions (31a and 31b) into a plurality of regions, and the motor for driving the lower stool is arranged in a region other than the region containing the lower stool. The polishing apparatus can manufacture a wafer of a stable shape, irrespective of the time elapsed from the running start and the presence/absence of the stop of the polishing apparatus.

Abstract: A chemical mechanical polishing pad having a polishing layer with an integral window and a polishing surface adapted for polishing a substrate selected from a magnetic substrate, an optical substrate and a semiconductor substrate, wherein the formulation of the integral window provides improved defectivity performance during polishing. Also provided is a method of polishing a substrate using the chemical mechanical polishing pad.

Abstract: A template for polishing Silicon Carbide, Sapphire, Germanium, Silicon and pattern wafers having a slurry inlet, channels, outlets and pockets for holding said wafers terminating in peripheral vacuum ports in order to facilitate an efficient flow of slurry over the semiconductor wafers during a polishing process.

Abstract: A polishing method, a polishing pad and a polishing system are provided. In the invention, the polishing pad is used to polish a polishing article. The polishing pad includes a polishing layer and a surface pattern disposed in the polishing layer. The polishing layer includes a polishing surface, a rotating central region, and a peripheral region. The surface pattern includes many grooves distributed from near the rotating central region and extending outward to near the peripheral region. The grooves include many groove cross sections along a circumferential direction of a same radius. Each of the groove cross sections has a left sidewall and a right sidewall. An included angle is formed by the polishing surface and one of a group of the left sidewalls and a group of the right sidewalls. The included angle is an obtuse angle.

Abstract: The present invention relates to a grinding wheel truing tool, its manufacturing method, and a truing apparatus, a method for manufacturing a grinding wheel and a wafer edge grinding apparatus using the same. The grinding wheel truing tool of the present invention compensates a groove of a fine-grinding wheel for fine-grinding a wafer edge, and includes a truer having an edge of the same angle as a slanted surface of the groove of the fine-grinding wheel and a cross-sectional shape corresponding to a cross-sectional shape of the groove. The present invention uses the truing tool to easily process the groove of the grinding wheel for fine-grinding the wafer edge.

Abstract: The present invention generally relates to a polishing system. Particularly, the present invention relates a polishing apparatus having one or more modular polishing stations, and a plurality of polishing heads movably connected to a transferring system.

Abstract: Semiconductor wafers are polished by a material-removing polishing process A, on both sides of the wafer, using an abrasive-free polishing pad, and a polishing agent which contains abrasive; and a material-removing polishing process B, on at least one side of the wafer, using a polishing pad with a microstructured surface containing no materials which contact the wafer which are harder than the semiconductor material, and a polishing agent is added which has a pH? to 10 and contains no substances with abrasive action. Preferred is a method for producing a semiconductor wafer, comprising the following ordered steps: separating a semiconductor single crystal into wafers; simultaneously processing both sides of the wafer by chip-removing processing; polishing the wafer, comprising a polishing process A and a polishing process B; and CMP of one side of the wafer, removing <1 ?m.

Abstract: A method of polishing a substrate includes rotating a polishing table having a polishing surface, holding the substrate by a top ring, bringing the substrate into contact with the polishing surface while swinging and rotating the top ring to polish the substrate, and monitoring a surface condition of the substrate by a monitoring sensor. A rotational speed of the polishing table and conditions of swing motion of the top ring are determined such that a position of the monitoring sensor, a position of a center of rotation of the top ring, and a direction of the swing motion of the top ring at a point of time when a predetermined period of time has elapsed after polishing of the substrate is started approximately coincide with their previous values at a point of time before the predetermined period of time has elapsed.

Abstract: Retaining rings with curved surfaces are described. The curved surfaces prevent damage to a fixed abrasive polishing pad when the retaining ring is used in a polishing process. The curved surfaces are on the bottom surface of the ring, such as along the outer diameter and/or along the sidewalls of channels formed in the bottom of the ring.

Abstract: A carrier configured for use in a lapping machine includes a body having a first opening for carrying a work piece during operation of the lapping machine. A device is arranged and disposed in the body. The device is configured to retain information readable by a reading device for identifying the body.

Abstract: A carrier head for chemical mechanical polishing that has a base, a mounting assembly connected to the base having a surface for contacting a substrate, and a retaining ring secured to the base. The retaining ring can include perfluoroalkoxy, polyetherketoneketone, polybenzimidazole, a semi-crystalline thermoplastic polyester, or a long molecular chain molecule produced from poly-paraphenylene terephthalamide.

Abstract: A polishing apparatus can perform more precise control of a polishing profile without carrying out many polishing tests in advance. The polishing apparatus includes: a polishing table 22 having a polishing surface 52a; a top ring 24 for holding a polishing object W and pressing the polishing object W against the polishing surface 52a; a polishing liquid supply nozzle 26 for supplying a polishing liquid to the polishing surface 52a; a movement mechanism 70 for moving a polishing liquid supply position 26a of the polishing liquid supply nozzle 26 approximately along the radial direction of the polishing surface 52a; a controller 66 for controlling the movement mechanism 70; and a simulator 72 for predicting the relationship between the polishing liquid supply position 26a of the polishing liquid supply nozzle 26 and a polishing profile, performing a simulation and outputting data to the controller 66.

Abstract: A polishing apparatus is used for polishing a substrate such as a semiconductor wafer to a flat mirror finish. The polishing apparatus includes a polishing table (100) having a polishing surface (101a), a top ring body (2) configured to hold and press a substrate against the polishing surface (101a), and a retainer ring (3) provided at an outer peripheral portion of the top ring body (2) and configured to press the polishing surface (101a). A fulcrum for receiving a lateral force applied from the substrate to the retainer ring (3) during polishing of the substrate is located above a central portion of the substrate.

Abstract: The present invention comprises of a process for lapping a high-throughput of ultra-flat wafers by utilizing a lapping apparatus containing a rotary flat, grooved polishing platen, at least two rotating pressurized heads each having a polishing wafer carrier that is adapted to receive a plurality of mounted wafers, and a plurality of concentric conditioning rings surrounding each pressurized head. The rotating pressurized heads are counterbalanced throughout the inventive process, and the lapping platen is continuously conditioned by simultaneously rotating the concentric conditioning rings over the lapping platen. This process allows continuous and controllable planarization thus allowing for a high throughput of wafers, while at the same time it prevents distortions in the lapping platen which reduces maintenance by providing continuous conditioning of the lapping platen.

Abstract: A system method and apparatus to monitor a frictional coefficient of a substrate undergoing polishing is described. A polishing pad assembly includes a polishing layer including a polishing surface, and a substrate contacting member flexibly coupled to the polishing layer having a top surface to contact an exposed surface of a substrate. At least a portion of the top surface is substantially coplanar with the polishing surface. A sensor is provided to measure a lateral displacement of the substrate contacting member. Some embodiments may provide accurate endpoint detection during chemical mechanical polishing to indicate the exposure of an underlying layer.

Abstract: An improved apparatus for debonding temporary bonded wafers includes a debonder, a cleaning module and a taping module. A vacuum chuck is used in the debonder for holding the debonded thinned wafer and remains with the thinned debonded wafer during the follow up processes steps of cleaning and mounting onto a dicing tape. In one embodiment the debonded thinned wafer remains onto the vacuum chuck and is moved with the vacuum chuck into the cleaning module and then the taping module. In another embodiment the debonded thinned wafer remains onto the vacuum chuck and first the cleaning module moves over the thinned wafer to clean the wafer and then the taping module moves over the thinned wafer to mount a dicing tape onto the wafer.

Abstract: An optical disk restoration apparatus and optical disk restoration method are provided, which are capable of achieving a high level of capability of restoring a scratched optical disk, without consuming the time and labor of an operator, while reducing the production cost of the apparatus. During a polishing process, an appropriate amount of a polishing agent is dropped onto the readout surface of the optical disk by a polishing agent supply pump to continuously supply the polishing agent to the interface between the optical disk and polishing pads, while a polishing water supply pump is operated to replenish the polishing agent with moisture evaporated by the polishing heat. By this mechanism, the amount and physical properties of the polishing agent at the interface between the optical disk and the polishing pads are appropriately maintained for a long period of time, so that the restoration capability is maintained at high levels.

Abstract: A universal blade sharpening machine is operable to securely hold and sharpen any one of multiple variously sized circular blades. The machine includes a blade-sharpening drive with an adjustable blade sharpener and also includes a universal blade holder that is rotatably powered by the drive. The blade holder includes a blade-receiving chassis that holds the blade during sharpening and is rotatable about a rotation axis of the blade holder. The chassis includes a plurality of radially spaced blade-retaining sections each associated with a respective one of the circular blades.

Abstract: A chemical mechanical polishing apparatus includes a container, a platen, first and second brushes, a polishing pad, a carrier, and a slurry supplier. The container has a bottom wall and a side wall. The side wall has an inwardly-extending upper portion. The platen is supported over the bottom wall. The platen is positioned lower than the inwardly-extending upper portion. The first brush brushes the side wall. The first brush is fixed to a side surface of the platen. The second brush brushes a side surface of the platen. The second brush is fixed to the bottom wall. The polishing pad is attached to the platen. The carrier presses a workpiece to be polished against the polishing pad. The slurry supplier supplies a slurry onto the polishing pad.

Abstract: A retainer is used with an apparatus for polishing a substrate. The substrate has upper and lower surfaces and a lateral, substantially circular, perimeter. The apparatus has a polishing pad with an upper polishing surface for contacting and polishing the lower face of the substrate. The retainer has an inward facing retaining face for engaging and retaining the substrate against lateral movement during polishing of the substrate. The retaining face engages a substrate perimeter at more than substantially a single discrete circumferential location along the perimeter.

Abstract: Provided are a single type substrate treating apparatus and method. A polishing unit is disposed in a process chamber for polishing a substrate chemically and mechanically, and a cleaning unit is disposed in the same process chamber for cleaning the substrate. Therefore, according to the single substrate treating apparatus and method, a polishing process and a cleaning process can be performed on a substrate in the same process chamber by a single substrate treating method in which substrates are treated one by one.

Abstract: A method of manufacturing a semiconductor wafer, including a step of differentiating the glossiness of a front surface from that of a rear surface of the wafer by holding the semiconductor wafer in a wafer holding hole formed in a carrier plate, and simultaneously polishing a front and back surface of said semiconductor wafer by driving said carrier plate to make a circular motion associated with no rotation on its own axis within a plane parallel with a surface of said carrier plate between a pair of polishing members disposed to face to each other, by using an abrasive body with a semiconductor wafer sink rate different in polishing from that of an abrasive body for one of a polishing member on an upper surface plate and a polishing member on a lower surface plate so as to simultaneously polish both the front and rear surfaces of the semiconductor wafer, or differentiating by differentiating the rotating speed of the upper surface plate from that of the lower surface plate.

Abstract: A polishing pad used in semiconductor polishing process is provided in the present invention and a pressure sensitive adhesive is used to couple the polishing pad. The polishing pad includes a substrate, and the substrate includes a polishing surface and a reverse surface corresponding to the polishing surface. The polishing pad is characterized by: a pressure sensitive adhesive formed on the reverse surface of the substrate and used to couple with a bottom layer, and the horizontal adhesion of the pressure sensitive adhesive is higher than the vertical adhesion of the pressure sensitive adhesive.

Abstract: A substrate holding apparatus prevents a substrate from slipping out and allows the substrate to be polished stably. The substrate holding apparatus has a top ring body for holding and pressing a substrate against a polishing surface, and a retainer ring for pressing the polishing surface, the retainer ring being disposed on an outer circumferential portion of the top ring body. The retainer ring includes a first member made of a magnetic material and a second member having a magnet disposed on a surface thereof which is held in abutment against the first member.

Abstract: Disclosed herein is a chemical mechanical polishing apparatus. The apparatus comprises a carrier to hold a wafer and being capable of lifting, lowering and rotating, a polishing pad compressed onto the wafer through the lowering of the carrier to polish the wafer, a contact pressure sensor to detect contact pressure between the polishing pad and the wafer when the polishing pad is compressed onto the wafer, a support physical property controller to generate control signals corresponding to the contact pressure detected by the contact pressure sensor, a variable physical property support being adapted to come into close contact with the polishing pad and having physical properties varied in response to the control signals generated by the support physical property controller, and a rotational table to hold the variable physical property table.

Abstract: A wafer polishing apparatus has a base and a turntable having a polishing pad thereon and mounted on the base for rotation of the turntable and polishing pad relative to the base about an axis perpendicular to the turntable and polishing pad. The polishing pad includes a work surface engageable with a front surface of a wafer for polishing the front surface of the wafer. A drive mechanism is mounted on the base for imparting rotational motion about an axis substantially parallel to the axis of the turntable. A polishing head is connected to the drive mechanism for driving rotation of the polishing head. The polishing head has a pressure plate adapted to hold the wafer for engaging the front surface of the wafer with the work surface of the polishing pad. The pressure plate has a generally planar position and is selectively movable from the planar position to a convex position and to a concave position.

Abstract: A mechanical polishing apparatus includes a polishing pad, at least one carrier head positioned over and off center relative to the polishing pad and configured for holding at least one substrate against the polishing pad within a first annular region of the polishing pad when the polishing pad is rotating. At least one conditioning head is positionable over and off center relative the polishing pad at a plurality of first positions and configured for applying a contacting surface of at least one conditioning pad against the polishing pad when the polishing pad is rotating, where the conditioning pad is applied to a second annular region of the polishing pad and moves between the plurality of first positions. In the apparatus, the diameter of the conditioning pad?a difference between a radius of the polishing pad and a width of the first annular region.

Abstract: Embodiments described herein relate to a track system in a polishing system. One embodiment described herein provides a track system configured to transfer polishing heads in a polishing system. The track system comprises a supporting frame, a track coupled to the supporting frame and defining a path along which the polishing heads are configured to move, and one or more carriages configured to carry at least one polishing head along the path defined by the track, wherein the one or more carriages are coupled to the track and independently movable along the track.

Abstract: The invention is directed to a method for polishing a surface comprising tungsten carbide, comprising contacting a surface comprising tungsten carbide with an oxidizing agent, a polishing component, and a liquid carrier, and abrading at least a portion of the surface to polish the surface. The invention further provides a method for reconditioning a workpiece comprising tungsten carbide. The invention also provides a cutting tool insert having a highly polished surface.

Abstract: A polishing system includes a polishing pad with an aperture that extends through all layers of the polishing pad and a light transmissive film positioned on top of a light-generating or light-guiding element of an optical monitoring system.

Abstract: In a polishing process, the characteristics of the removal process may be monitored at different lateral positions to identify the clearance of the various device regions with a high degree of reliability. Consequently, upon forming sophisticated metallization structures, undue over-polishing may be avoided while at the same time providing reduced leakage currents due to enhanced material removal.

Abstract: An article of manufacture, a method, and an apparatus for use in a chemical mechanical polishing system is provided. In one aspect, an article of manufacture is provided for polishing a substrate including a polishing article having a polishing surface, the polishing surface including a first polishing portion having a first polishing material of a first hardness for polishing a first portion of the substrate, and a second polishing portion having a second polishing material of a second hardness for polishing a second portion of the substrate. The article of manufacturer may be disposed on a rotatable, stationary, or linear platen for processing a substrate. In another aspect, a method is provided for processing a substrate, including providing a platen containing the polishing article disposed on the rotatable platen, delivering a polishing composition to the polishing article, and contacting a substrate on the polishing article.

Abstract: Chemical-mechanical polishing or planarization (CMP) is enhanced with multi-zone slurry delivery. A polishing pad is provided that contacts with the work piece, and a multi-zone platen is displaced proximate to the polishing pad to facilitate slurry delivery. The platen includes multiple fluid distribution layers that each include a fluid-distributing channel extending from a fluid source to a distribution point on layer. The distribution points on each of the fluid distribution layers correspond to different locations on the polishing surface to thereby create multiple fluid-delivery zones on the pad.

Abstract: A substrate holding apparatus prevents a substrate from slipping out and allows the substrate to be polished stably. The substrate holding apparatus has a top ring body for holding and pressing a substrate against a polishing surface, and a retainer ring for pressing the polishing surface, the retainer ring being disposed on an outer circumferential portion of the top ring body. The retainer ring includes a first member made of a magnetic material and a second member having a magnet disposed on a surface thereof which is held in abutment against the first member.

Abstract: A polishing pad assembly for a chemical mechanical polishing apparatus includes a polishing pad having a polishing surface and a surface opposite the polishing surface for attachment to a platen, and a solid light-transmissive window formed in the polishing pad. The light-transmissive window is more transmissive to light than the polishing pad. The light-transmissive window has a light-diffusing bottom surface.

Abstract: The present invention is a polishing head provided with an annular rigid ring, a rubber film bonded to the rigid ring with a uniform tension, a mid plate joined to the rigid ring and forming a space portion together with the rubber film and the rigid ring, and an annular template provided concentrically with the rigid ring in a peripheral portion on a lower face part of the rubber film and having an outer diameter larger than an inner diameter of the rigid ring, in which a pressure of the space portion can be changed by a pressure adjustment mechanism, a back face of a work is held on the lower face part of the rubber film, and a surface of the work is brought into sliding contact with the polishing pad attached onto a turn table for performing polishing, and an inner diameter of the template is smaller than an inner diameter of the rigid ring, and a ratio between an inner diameter difference between the rigid ring and the template and a difference between the inner diameter and an outer diameter of the templ

Abstract: A workpiece having a planar face the workpiece is rotated about a workpiece axis substantially perpendicular to the planar workpiece face, and a grinding disk centered on a disk axis is rotated about the disk axis. The disk has an annular planar disk face perpendicular to and centered on the disk axis and an annular frustoconical disk face extending from an edge of the planar disk face, centered on the disk axis, and angled inward from the planar disk face. A portion of the annular face is oriented perpendicular to the workpiece axis and pressed against the planar workpiece face to premachine most of the planar workpiece face. Thereafter the disk is pivoted and oriented parallel the planar workpiece face to finish machine the planar workpiece face with the planar disk face.

Abstract: A polishing apparatus has a polishing pad, a top ring for holding a semiconductor wafer, and a vertical movement mechanism operable to move the top ring in a vertical, direction. The polishing apparatus also has a distance measuring sensor operable to detect a position of the top ring when a lower surface of the top ring is brought into contact with the polishing pad, and a controller operable to calculate an optimal position of the top ring to polish the semiconductor wafer based on the position detected by the distance measuring sensor. The vertical movement mechanism includes a ball screw mechanism operable to move the top ring to the optimal position.