Abstract: An external clamp ring for a chemical mechanical polishing (CMP) carrier head having a hydrophobic coating, and a carrier head having the same are described herein. In one embodiment, an external clamp ring is provided that includes a cylindrical body having an outer cylindrical wall and an inner cylindrical wall. A hydrophobic layer disposed is on the outer cylindrical wall.

Abstract: A carrier head for a chemical mechanical polisher includes a base, a substrate mounting surface, an annular inner ring and an outer ring. The inner ring has a lower surface configured to contact an upper surface of a substrate positioned on the substrate mounting surface, an outer surface, and an inwardly facing surface extending downwardly from the lower surface and is configured to circumferentially surround the edge of the substrate, the inner ring vertically movable relative to the substrate mounting surface. The outer ring has an inner surface circumferentially surrounding the inner ring, an outer surface, and a lower surface to contact the polishing pad, and the outer ring is vertically movable relative to and independently of the substrate mounting surface and the inner ring.

Abstract: A polishing device is provided to suppress deterioration in reproducibility of a polishing profile due to a variation or change with time of a shape of a retaining ring of a substrate holding member for each of retaining rings. The polishing device includes: a polishing head configured to press a substrate against a polishing pad and have a retainer ring surrounding the substrate pressed against the polishing pad; a measurement sensor configured to measure a surface shape of the retainer ring; and a controller configured to determine a polishing condition of the substrate based on the surface shape of the retainer ring measured by the measurement sensor.

Abstract: A chemical mechanical polishing system includes a carrier head having a flexible membrane and a chamber to apply pressure to the flexible membrane, a pressure control unit, a pressure supply line connecting the pressure control unit to the chamber, and a sensor located along the pressure supply line to detect a contaminant in the pressure supply line.

Abstract: An elastic membrane is used in a substrate holding apparatus for holding a substrate such as a semiconductor wafer and pressing the substrate against a polishing surface. The elastic membrane includes a plurality of concentrically circumferential walls configured to define a plurality of pressurizing areas for pressing the substrate. The pressurizing areas includes a central pressurizing area located at a central part of the elastic membrane, an annular edge pressurizing area located at the outermost part of the elastic membrane, and a plurality of intermediate pressurizing areas located between the central pressurizing area and the annular edge pressurizing area. The area width of at least one of the intermediate pressurizing areas is set in a range to allow a polishing rate responsive width not to vary even when the area width is varied.

Abstract: Provided is a carrier head. The carrier head includes: a body having a ring shape, wherein a first locking part is formed on an external surface of the body; a support unit surrounding lateral and lower parts of the body to be elevatably coupled to the body, wherein a second locking part vertically facing the first locking part is formed on an internal surface of the support unit; a regulating member located in a space between the first locking part and the second locking part; a retainer ring having a ring shape and located at the external bottom of the support unit; and an elevating unit coupling the retainer ring to the support unit to enable a height to be regulated relative to the support unit.

Abstract: A substrate holder capable of preventing an increase in a polishing rate of an edge portion of a substrate, even when polishing a plurality of substrates successively, is disclosed. The substrate holder includes: a top ring body configured to hold the substrate; and a retaining ring disposed so as to surround the substrate held by the top ring body. The retaining ring includes a pad pressing structure in an annular shape which is to be brought into contact with the polishing pad, and the pad pressing structure has a width in a range of 3 mm to 7.5 mm.

Abstract: A polishing method and a polishing apparatus which can increase a polishing rate and can control a polishing profile of a substrate being polished by adjusting a surface temperature of a polishing pad are disclosed. The polishing method for polishing a substrate by pressing the substrate against a polishing pad on a polishing table includes a pad temperature adjustment step of adjusting a surface temperature of the polishing pad, and a polishing step of polishing the substrate by pressing the substrate against the polishing pad having the adjusted surface temperature. In the pad temperature adjustment step, the surface temperature of a part of an area of the polishing pad, the area being to be brought in contact with the substrate, is adjusted during the polishing step so that the rate of temperature change of a temperature profile in a radial direction of the surface of the polishing pad becomes constant in the radial direction of the polishing pad.

Abstract: Disclosed is a wafer polishing apparatus including a base, a lower surface plate disposed on the upper surface of the base, an upper surface plate disposed on the lower surface plate and a first shape adjustment unit configured to deform the shape of the lower surface of the upper surface plate so that the lower surface of the upper surface plate has one of a concave shape, a flat shape and a convex shape in a first direction, and the first direction is a direction from the lower surface plate to the upper surface plate.

Abstract: A polishing apparatus capable of stably controlling a pressure in a pressure chamber of a top ring is disclosed. The polishing apparatus includes: a rotatable polishing table for supporting a polishing pad; a rotatable top ring having a pressure chamber for pressing a substrate against the polishing pad; a pressure regulator configured to regulate a pressure of a gas in the pressure chamber; and a buffer tank provided between the pressure chamber and the pressure regulator. The pressure regulator includes a pressure-regulating valve, a pressure gauge configured to measure the pressure of the gas at a downstream side of the pressure-regulating valve, and a valve controller configured to control an operation of the pressure-regulating valve so as to minimize a difference between a target value of the pressure in the pressure chamber and a pressure value measured by the pressure gauge.

Abstract: The substrate holder is a device for holding a substrate and pressing it against a polishing pad. The substrate holder includes: an inner retaining ring vertically movable independently of the top ring body and arranged around the substrate; an inner pressing mechanism to press the inner retaining ring against the polishing surface of the polishing pad; an outer retaining ring to vertically movable independently of the inner retaining ring and the top ring body; an outer pressing mechanism to press the outer retaining ring against the polishing surface; and a supporting mechanism to receive a lateral force applied to the inner retaining ring from the substrate during polishing of the substrate and to tiltably support the outer retaining ring.

Abstract: A polishing head for chemical mechanical planarization is provided. The polishing head includes a housing and a flexible membrane secured to the housing. At least a first, second, and third pressurizable chamber are disposed in the housing and each chamber contacts the flexible membrane. A first pressure delivery channel couples to the first chamber. A second pressure delivery channel couples to the third chamber. A first pressure feed line couples the first pressure delivery channel to the second chamber. A second pressure feed line couples the second pressure delivery channel to the second chamber. A first manually movable plug interfaces with the first pressure feed line to allow or block pressure from the first pressure delivery channel to the second chamber. A second manually movable plug interfaces with the second pressure feed line to allow or block pressure from the first pressure delivery channel to the second chamber.

Abstract: An elastic membrane capable of precisely controlling a polishing profile in a narrow area of a wafer edge portion is disclosed. The elastic membrane includes a contact portion to be brought into contact with a substrate; a first edge circumferential wall extending upwardly from a peripheral edge of the contact portion; and a second edge circumferential wall having a horizontal portion connected to an inner circumferential surface of the first edge circumferential wall. The inner circumferential surface of the first edge circumferential wall includes an upper inner circumferential surface and a lower inner circumferential surface, both of which are perpendicular to the contact portion. The upper inner circumferential surface extends upwardly from the horizontal portion of the second edge circumferential wall, and the lower inner circumferential surface extends downwardly from the horizontal portion.

Abstract: A retainer ring configured to be attachable, at a first side thereof, to a polish head of a polish apparatus configured to polish a polish object by depressing the polish object against a polish pad is disclosed. The retainer ring is configured to depress the polish pad at a second side thereof. The retainer ring includes a contact surface contacting the polish pad. The contact surface applies depressing force on the polish pad. The depressing force is directed from a polish head side and is applied so as to be centered on an imaginary circle of pressure center having a radius falling substantially in a middle of an inner radius of the retainer ring and an outer radius of the retainer ring. An area of the contact surface is greater in a first region inside the circle of pressure center than in a second region outside the circle of pressure center.

Abstract: A CMP structure for CMP processing and a method of making a device using the same are presented. The apparatus comprises a polishing pad on a platen table, a head assembly for holding a wafer against the polishing pad, wherein the head assembly includes a retaining ring, a sensor for sensing the depth of grooves on the retaining ring and a controller for determining an update pressure to apply to the retaining ring based on the depth of the grooves and applying the updated pressure to the retaining ring during processing.

Abstract: Among other things, one or more techniques and/or systems are provided for driving a body of a polishing head using an alignment gear. That is, an alignment gear, coupled to a housing of the polishing head, can transfer rotational force from the housing to the body responsive to the alignment gear being mated with a channel associated with the body. For example, the housing can supply pressure to the body, resulting in the body and the housing moving towards one another into a mated state. When the body and the housing are in the mated state, the alignment gear can mate with the channel (e.g., the alignment gear can fit within the channel). In this way, the alignment gear can drive the body by transferring rotational force to the body, resulting in the body rotating a semiconductor wafer against a polishing pad to polish the semiconductor wafer, for example.

Abstract: A polishing head of a chemical mechanical polishing apparatus includes a housing moving up and down, a base assembly connected to a bottom of the housing to support the housing, a membrane on a bottom of the base assembly and a retainer ring surrounding the membrane and connected to the bottom of the base assembly, the membrane including a pressing portion to adsorb and press a substrate, a first partition on the pressing portion and extending from an edge of the pressing portion along a height direction, a first horizontal extending portion extending from an upper end portion of the first partition toward a center of the membrane, and a second horizontal extending portion from the upper end portion of the first partition toward the center of the membrane, the second horizontal extending portion being above the first horizontal extending portion and including a curved portion expanding by pneumatic pressure.

Abstract: A retaining ring can be shaped by machining or lapping the bottom surface of the ring to form a shaped profile in the bottom surface. The bottom surface of the retaining ring can include flat, sloped and curved portions. The lapping can be performed using a machine that dedicated for use in lapping the bottom surface of retaining rings. During the lapping the ring can be permitted to rotate freely about an axis of the ring. The bottom surface of the retaining ring can have curved or flat portions.

Abstract: A polishing is used for polishing a substrate such as a semiconductor wafer to a flat mirror finish. The polishing apparatus includes a polishing table having a polishing surface, a substrate holding apparatus configured to hold the substrate and to press the substrate against the polishing surface, and a controller. The substrate holding apparatus includes an elastic membrane configured to forma substrate holding surface which is brought into contact with the substrate, a carrier provided above the elastic membrane, at least one pressure chamber formed between the elastic membrane and the carrier, and an infrared light detector configured to measure thermal energy from the elastic membrane. The controller calculates an estimate value of a temperature of the elastic membrane using a measured value of the infrared light detector.

Abstract: A polisher, a pressure plate (20) of the polisher, and a method of polishing are disclosed. The pressure plate (20) includes a main body, an air bag (50) mounted to one surface of the main body to adjust a pressure applied from the main body to a polishing object, and a pad (16b) having a ring shape, mounted along a circumference of the one surface of the main body.

Abstract: A method and apparatus for chemical mechanical polishing of substrates, and more particularly a method and apparatus related to a carrier had for use in chemical mechanical polishing is provided. In one embodiment the carrier head assembly comprises a base assembly for providing support to the substrate, a flexible membrane mounted on the base assembly having a generally circular central portion with a lower surface that provides a substrate mounting surface, and a plurality of independently pressurizable chambers formed between the base assembly and the flexible membrane, comprising an annular outer chamber and a non-circular inner chamber, is provided.

Abstract: A substrate treatment apparatus includes: a chamber; a substrate being treated with a treatment liquid in the chamber; a temperature measuring unit which measures an internal air temperature of the chamber and/or a temperature of the treatment liquid; a temperature adjusting unit which changes the internal air temperature and/or the temperature of the treatment liquid; a storage unit which stores a map defining a relationship between the air temperature and the treatment liquid temperature so that a treatment liquid temperature level for a given air temperature level is lower than the given air temperature level; and a temperature controlling unit which sets a target value of the internal air temperature of the chamber or the temperature of the treatment liquid based on the map and a measurement value detected by the temperature measuring unit, and controls the temperature adjusting unit based on the target value.

Abstract: Flat-surfaced workpieces such as semiconductor wafers or sapphire disks are attached to a rotatable floating workpiece holder carrier that is supported by a pressurized-air flexible elastomer sealed air-chamber device and is rotationally driven by a lug-pin device. The rotating wafer carrier rotor is restrained by a set of idlers that are attached to a stationary housing to provide rigid support against abrading forces. The abrading system can be operated at the very high abrading speeds used in high speed flat lapping with raised-island abrasive disks. The range of abrading pressures is large and the device can provide a wide range of torque to rotate the workholder. Vacuum can also be applied to the elastomer chamber to quickly move the wafer away from the abrading surface. Internal constraints limit the axial, lateral and circumferential motion of the workholder. Wafers can be quickly attached to the workpiece carrier with vacuum.

Abstract: A load cup apparatus for transferring a substrate in a processing system includes a pedestal assembly having a substrate support, an actuator, and a controller. The actuator is configured to move the pedestal assembly into a loading position in contact with a retaining ring of a carrier head and to generate a retaining ring thickness signal based on a distance travelled by the pedestal assembly. The controller is configured to receive the retaining ring thickness signal from the actuator.

Abstract: The wafer polishing apparatus comprises a polishing plate, a polishing head capable of holding a wafer, and a slurry supplying section. The polishing plate includes: a plurality of concentric polishing zones, each of which has a prescribed width for polishing the wafer and on each of which a polishing cloth is adhered; and a groove for discharging slurry being formed between the polishing zones. A head cleaning section, which cleans the polishing head, or a wafer cleaning section, which cleans the polished wafer, is provided to a center part of the polishing plate and located on the inner side of the innermost polishing zone.

Abstract: Flat-surfaced workpieces such as semiconductor wafers or sapphire disks are attached to a rotatable floating or rigid workpiece holder carrier that is supported by a pressurized-air flexible elastomer disk sealed air-chamber device and is rotationally driven by a flexible arm or a lug-pin device. The rotating wafer carrier rotor is horizontally restrained by a set of idlers that are attached to a stationary housing to provide rigid support against abrading forces. The abrading system can be operated at the very high abrading speeds used in high speed flat lapping with raised-island abrasive disks. A wide range of abrading pressures are applied uniformly across the surface of the workpiece. Vacuum can also be applied to the elastomer chamber to quickly move the wafer away from the abrading surface. Internal constraints limit the axial, lateral and circumferential motion of the workholder. Wafers can be quickly attached to the workpiece carrier with vacuum.

Abstract: A method of controlling a polishing operation includes obtaining a sequence over time of measured spectra with an in-situ optical monitoring system during polishing. For each measured spectrum from the sequence an optical model is fit. The optical model includes dimensions of a repeating structure and the fitting includes calculating a output spectrum using diffraction effects of the repeating structure, and parameters of the optical model include an endpoint parameter and a parameter of the repeating structure. The fitting generates the sequence of fitted endpoint parameter values, and at least one of a polishing endpoint or an adjustment of a pressure to the substrate is determined from the sequence of fitted endpoint parameter values.

Abstract: Flat-surfaced workpieces such as semiconductor wafers are attached to a rotatable floating workpiece holder carrier rotor that is supported by and rotationally driven by a bellows. The rotating wafer carrier rotor is restrained by a set of idlers that are attached to a stationary housing to provide rigid support against abrading forces. The idlers allow low-friction operation of the abrading system to be provided at the very high abrading speeds used in high speed flat lapping with raised-island abrasive disks. The carrier rotor is also restrained by a rigid rotating housing to allow a limited lateral motion and also a limited angular motion. Air pressure within a sealed bellows chamber provides controlled abrading pressure for wafers or other workpieces. Vacuum can also be applied to the bellows chamber to quickly move the wafer away from the abrading surface. Wafers can be quickly attached to the workpiece carrier with vacuum.

Abstract: Flat-surfaced workpieces such as semiconductor wafers or sapphire disks are attached to a rotatable floating workpiece holder carrier that is supported by a pressurized-air flexible elastomer sealed air-chamber device and is rotationally driven by a circular flexible-arm device. The rotating wafer carrier rotor is restrained by a set of idlers that are attached to a stationary housing to provide rigid support against abrading forces. The abrading system can be operated at the very high abrading speeds used in high speed flat lapping with raised-island abrasive disks. The range of abrading pressures is large and the device can provide a wide range of torque to rotate the workholder. Vacuum can also be applied to the elastomer chamber to quickly move the wafer away from the abrading surface. Internal constraints limit the axial and lateral motion of the workholder. Wafers can be quickly attached to the workpiece carrier with vacuum.

Abstract: A retaining ring for holding a substrate below a carrier head during chemical mechanical polishing includes an annular lower portion and an annular upper portion secured to the lower portion. The annular lower portion has a main body with a bottom surface for contacting a polishing pad during polishing, and is a first material. A top surface of the upper portion is configured to be secured to the carrier head. The upper portion is a second material that is more rigid than the first material. A thickness and stiffness of the lower portion is selected for a particular polishing environment to improve polishing uniformity near an edge of the substrate.

Abstract: The present invention provides methods and apparatus for a pre-CMP semiconductor substrate buffing module. The invention includes a polishing pad assembly adapted to be rotated against a major surface of a substrate; a chuck adapted to hold the substrate and to rotate the substrate against the polishing pad assembly as the polishing pad assembly is rotated; and a lateral motion motor adapted to oscillate the polishing pad assembly laterally across the major surface of the substrate while the polishing pad assembly is rotated against the rotating substrate. Numerous additional features are disclosed.

Abstract: A method of controlling a polishing operation includes polishing a first layer of a substrate, during polishing, obtaining a sequence over time of measured spectra with an in-situ optical monitoring system, for each measured spectrum from the sequence of measured spectra, fitting an optical model to the measured spectrum, the fitting including finding parameters that provide a minimum difference between an output spectrum of the optical model and the measured spectrum, the parameters including an endpoint parameter and at least one non-endpoint parameter, the fitting generating a sequence of fitted endpoint parameter values, each endpoint parameter value of the sequence associated with one of the spectra of the sequence of measured spectra, and determining at least one of a polishing endpoint or an adjustment of a pressure to the substrate from the sequence of fitted endpoint parameter values.

Abstract: Provided is a membrane assembly of a carrier head in a chemical-mechanical polishing apparatus. The membrane assembly includes a main membrane and a circular ring. The main membrane has a wafer contacting surface in contact with a wafer while a chemical-mechanical polishing process is being performed. The circular ring is disposed at an edge portion of the main membrane and receives an air pressure to downwardly apply the air pressure to the main membrane at the edge portion.

Abstract: Hard-material, flat-surfaced workpieces such as semiconductor wafers or sapphire disks are quickly attached with vacuum to a rotatable floating workpiece carrier. Fluid pressure in a sealed chamber applies uniform abrading pressure over the full abraded surface of the workpieces. A flexible diaphragm is used to form the sealed chamber and the carrier is rotationally driven by a lug-pin device. The floating carrier is horizontally restrained by a center-post device that provides rigid lateral support against abrading forces. Tilting of the floating carrier is provided by a spherical bearing. The abrading system can be operated at the very high abrading speeds used in high speed flat lapping with raised-island abrasive disks. Vacuum can also be applied to the sealed chamber to quickly move the workpiece away from the abrading surface. A mode of providing rigid parallel-surface abrading of a workpiece can be activated by simply applying vacuum to the sealed chamber.

Abstract: A polishing apparatus is used for polishing a substrate such as a semiconductor wafer to a flat mirror finish. The polishing apparatus includes a polishing table having a polishing surface, a substrate holding apparatus configured to hold the substrate and to press the substrate against the polishing surface, and a controller. The substrate holding apparatus includes an elastic membrane configured to form a substrate holding surface which is brought into contact with the substrate, a carrier provided above the elastic membrane, at least one pressure chamber formed between the elastic membrane and the carrier, and an infrared light detector configured to measure thermal energy from the elastic membrane. The controller calculates an estimate value of a temperature of the elastic membrane using a measured value of the infrared light detector.

Abstract: A polishing head assembly for single side polishing of silicon wafers includes a polishing head and a cap. The polishing head includes a top surface and a bottom surface and defines a longitudinal axis extending therethrough. The cap is positioned coaxially with the polishing head and includes an upper surface and a lower surface. The upper surface is spaced from the bottom surface of the polishing head to form a chamber that allows the cap to deflect toward the polishing head.

Abstract: A polishing apparatus has a polishing pad, a top ring for holding a semiconductor wafer, and a vertical movement mechanism operable to move the top ring in a vertical direction. The polishing apparatus also has a distance measuring sensor operable to detect a position of the top ring when a lower surface of the top ring is brought into contact with the polishing pad, and a controller operable to calculate an optimal position of the top ring to polish the semiconductor wafer based on the position detected by the distance measuring sensor. The vertical movement mechanism includes a ball screw mechanism operable to move the top ring to the optimal position.

Abstract: A polishing apparatus which includes a polishing head for holding a work, and a polishing plate on which a polishing pad is adhered. The polishing head includes a holding plate, an elastic sheet member fixed to an edge of the holding plate, a ring-shaped template fixed to an outer edge of a lower face of the elastic sheet member, a pressure chamber formed between a lower face of the holding plate and an upper face of the elastic sheet member, a seal ring having a main body part which is fitted to a supporting plate, a seal lip, which slidelingly contacts the elastic sheet member and divides the inside of the pressure chamber into an inner divided chamber and an outer divided chamber; and a fluid supply section for individually supplying a fluid to the divided chambers.

Abstract: A chemical mechanical polishing (CMP) system includes a rotating polishing table including a platen providing at least two pressure zones having different pressures; a sub-pad positioned on the platen, the sub-pad including a plurality of openings allowing for transmission of the different pressures therethrough; a fixed abrasive pad positioned on the sub-pad; and a pressure-creating system sealingly coupled to the platen for creating a different pressure in the at least two pressure zones, wherein the different pressures create topography on the fixed abrasive pad. A sub-pad and related method are also provided.

Abstract: A polishing apparatus has a polishing pad, a top ring for holding a semiconductor wafer, and a vertical movement mechanism operable to move the top ring in a vertical direction. The polishing apparatus also has a distance measuring sensor operable to detect a position of the top ring when a lower surface of the top ring is brought into contact with the polishing pad, and a controller operable to calculate an optimal position of the top ring to polish the semiconductor wafer based on the position detected by the distance measuring sensor. The vertical movement mechanism includes a ball screw mechanism operable to move the top ring to the optimal position.

Abstract: Flat-surfaced workpieces such as semiconductor wafers are attached to a rotatable floating workpiece holder carrier rotor that is supported by and rotationally driven by a bellows. The wafer carrier rotor is contained by a set of idlers that are attached to a stationary rotor housing to provide support against abrading forces that are imposed on the wafer by the moving abrasive coating on a rotary platen. The idlers allow low-friction operation of the abrading system to be provided at the very high abrading speeds used in high speed flat lapping with raised-island abrasive disks. The system is also well suited for lapping optical devices and rotary seals and for chemical mechanical planarization (CMP) polishing of wafers using resilient pads. Pressurized air is injected into the bellows device to provide uniform abrading pressure across the full surface of the wafer. Wafers can be attached to the workpiece carrier with vacuum.

Abstract: An inner ring for a carrier head has an inner surface configured to circumferentially surround the edge of a substrate positioned on the substrate mounting surface, an outer surface, and a lower surface to contact a polishing pad. An outer ring for a carrier head has an inner surface circumferentially surrounding the inner ring, an outer surface, and a lower surface to contact the polishing pad.

Abstract: A method of controlling polishing includes polishing a substrate and receiving an identification of a selected spectral feature, a wavelength range having a width, and a characteristic of the selected spectral feature to monitor during polishing. A sequence of spectra of light from the substrate is measured while the substrate is being polished. A sequence of values of the characteristic of the selected spectral feature is generated from the sequence of spectra. For at least some spectra from the sequence of spectra, a modified wavelength range is generated based on a position of the spectral feature within a previous wavelength range used for a previous spectrum in the sequence of spectra, the modified wavelength range is searched for the selected spectral feature, and a value of a characteristic of the selected spectral feature is determined.

Abstract: A chemical mechanical polishing apparatus includes a platen having a first region configured to support a wafer, and a second region disposed outside the first region. The chemical mechanical polishing apparatus further includes a polishing pad disposed on the platen, a pad head to which the polishing pad is attached, a slurry supply configured to supply a slurry onto the wafer, and an injection port disposing on the second region of the platen. The injection port is configured to inject a predetermined gas to an edge of a bottom surface of the wafer and toward the outside of the wafer.

Abstract: A polishing method includes: mounting a wafer on a fixed abrasive polishing pad located on a polishing platen; delivering a polishing slurry to the fixed abrasive polishing pad to polish the wafer; and adsorbing abrasive particles generated during the polishing process with an electrode. The electrode has a polarity opposite to a polarity of charges of the abrasive particles. A polishing device includes a polishing platen, a fixed abrasive polishing pad, a slurry pipeline and a polarity changer having an electrode. Therefore, the abrasive particles generated during the polishing process are removed, which prevents the wafer from being scratched, thereby increasing wafer yield and improving efficiency.

Abstract: The rotary platens used here for high speed lapping are light in weight and low in mass inertia to allow fast acceleration and deceleration of the platens. The use of cast aluminum materials that are adhesively bonded together provides very rigid platens that have precision-flat surfaces that are dimensionally stable over long periods of time. Use of hardened spherical bead coatings on the surfaces of the platens provides wear-resistant coatings that are easy to apply and to maintain. The platens are constructed using ribs that provide very substantial stiffness and yet are light in weight which allows relatively small motors to be used to drive the platens. Platens are also constructed where the platen mass center is offset a very small distance from the center of rotation of the spherical-action bearings that support the platens to prevent dynamic distortion of the platen abrasive surface due to platen out-of-balance forces.

Abstract: Flat-surfaced workpieces such as semiconductor wafers or sapphire disks are attached to a rotatable floating or rigid workpiece holder carrier that is supported by a pressurized-air flexible elastomer disk sealed air-chamber device and is rotationally driven by a flexible arm or a lug-pin device. The rotating wafer carrier rotor is horizontally restrained by a set of idlers that are attached to a stationary housing to provide rigid support against abrading forces. The abrading system can be operated at the very high abrading speeds used in high speed flat lapping with raised-island abrasive disks. A wide range of abrading pressures are applied uniformly across the surface of the workpiece. Vacuum can also be applied to the elastomer chamber to quickly move the wafer away from the abrading surface. Internal constraints limit the axial, lateral and circumferential motion of the workholder. Wafers can be quickly attached to the workpiece carrier with vacuum.

Abstract: The wafer polishing apparatus comprises a polishing plate, a polishing head capable of holding a wafer, and a slurry supplying section. The polishing plate includes: a plurality of concentric polishing zones, each of which has a prescribed width for polishing the wafer and on each of which a polishing cloth is adhered; and a groove for discharging slurry being formed between the polishing zones. A head cleaning section, which cleans the polishing head, or a wafer cleaning section, which cleans the polished wafer, is provided to a center part of the polishing plate and located on the inner side of the innermost polishing zone.

Abstract: A method and apparatus for releasbly attaching flexible abrasive disks to a flat-surfaced platen that floats in three-point abrading contact with three rigid equal-height flat-surfaced rotable fixed-position workpiece spindles that are mounted on a precision-flat abrading machine base where the spindle surfaces are in a common plane that is co-planar with the base surface. The three spindles are positioned to form a triangle of platen supports where the rotational-centers of each of the spindles are positioned at the center of the annular width of the platen abrading surface. Flat surfaced workpieces are attached to the spindles and the rotating floating-platen abrasive surface contacts all three rotating workpieces to perform single-sided abrading. The platen abrasive can be re-reflattened by attaching equal-thickness abrasive disks to the three spindles that are rotated while in abrading contact with the rotating platen abrasive. There is no wear of the abrasive-disk protected platen surface.

Abstract: The present invention comprises of a process for lapping a high-throughput of ultra-flat wafers by utilizing a lapping apparatus containing a rotary flat, grooved polishing platen, at least two rotating pressurized heads each having a polishing wafer carrier that is adapted to receive a plurality of mounted wafers, and a plurality of concentric conditioning rings surrounding each pressurized head. The rotating pressurized heads are counterbalanced throughout the inventive process, and the lapping platen is continuously conditioned by simultaneously rotating the concentric conditioning rings over the lapping platen. This process allows continuous and controllable planarization thus allowing for a high throughput of wafers, while at the same time it prevents distortions in the lapping platen which reduces maintenance by providing continuous conditioning of the lapping platen.