Abstract: A substrate holding apparatus prevents a substrate from slipping out and allows the substrate to be polished stably. The substrate holding apparatus has a top ring body for holding and pressing a substrate against a polishing surface, and a retainer ring for pressing the polishing surface, the retainer ring being disposed on an outer circumferential portion of the top ring body. The retainer ring includes a first member made of a magnetic material and a second member having a magnet disposed on a surface thereof which is held in abutment against the first member.

Abstract: The present invention relates to a polishing apparatus and a polishing method for polishing a substrate, such as a semiconductor wafer, to planarize the substrate.

Abstract: A wafer polishing carrier apparatus and a chemical mechanical polishing equipment employing the same includes a drive rotary union rotating on an axis and receiving a flow of fluid through a first conduit in a sealed-up state; driven rotary unions revolving on their own axis at different sides of the drive rotary union, and receiving the flow of fluid from the drive rotary union through a second conduit in a sealed-up state; a carrier attached to an end part of the driven rotary union to adsorb/detach a wafer using a fluid pressure provided through a third conduit connected through the second conduit; and a filter filtering pollution material in the fluid flowing in and out of the third conduit on the periphery of the carrier to prevent the pollution material from escaping external to the carrier, the pollution material generated from rotation of the drive rotary union and driven rotary unions.

Abstract: A wafer polishing apparatus has a base and a turntable having a polishing pad thereon and mounted on the base for rotation of the turntable and polishing pad relative to the base about an axis perpendicular to the turntable and polishing pad. The polishing pad includes a work surface engageable with a front surface of a wafer for polishing the front surface of the wafer. A drive mechanism is mounted on the base for imparting rotational motion about an axis substantially parallel to the axis of the turntable. A polishing head is connected to the drive mechanism for driving rotation of the polishing head. The polishing head has a pressure plate adapted to hold the wafer for engaging the front surface of the wafer with the work surface of the polishing pad. The pressure plate has a generally planar position and is selectively movable from the planar position to a convex position and to a concave position.

Abstract: A pressure control system of a wafer polishing apparatus includes a main input air pressure regulator, an air branch conduit, a plurality of first pipes, a plurality of auxiliary air pressure regulators, a plurality of second pipes, and a plurality of air pressure controlling devices. The air branch conduit is connected with the main input air pressure regulator. The first pipes are connected between the air branch conduit and the auxiliary air pressure regulators. The second pipes are connected between the auxiliary air pressure regulators and the air pressure controlling devices. Accordingly, the air pressure controlling devices can control the pressure outputted from a polishing head of the wafer polishing apparatus to a surface of a wafer.

Abstract: A multi-station polish system and process for polishing thin, flat (planar) and rigid workpieces. Workpieces are conveyed through multiple polishing stations that include a bulk material removal belt polishing station and finishing rotary polishing station. The bulk of the material is relatively quickly removed at the bulk removal station using a conformable abrasive belt and the workpiece surface is then polished to the desired finish at the finishing station using a conformable annular rotary polishing pad.

Abstract: Embodiments of the invention comprise a machine adapted for polishing work pieces such as large silicon wafers. A wafer polishing machine in accord with the invention comprises a rotatable platen in a table base, above which is mounted a lid having a head moving assembly with four synchronously rotatable head assemblies. A motor and linkage connected to the head moving assembly imparts reciprocating linear motion to the head assemblies in a selected direction in a plane parallel to an upper surface of the platen. Embodiments of the invention produce a complex relative motion between a surface of a wafer to be polished and the platen. The complex relative motion, resulting from a combination of motions including rotation of the platen, rotation of the head assemblies, and translation of the head moving assembly, improves a uniformity of polish and a rate of polishing compared to wafer polishing machines known in the art.

Abstract: A chemical mechanical polishing (CMP) device for processing a wafer is provided which includes a plate for supporting the wafer to be processed in a face-up orientation, a polishing head opposing the plate, wherein the polishing head includes a rotatable polishing pad operable to contact the wafer while the polishing pad is rotating, and a slurry coating system providing a slurry to the polishing pad for polishing the wafer.

Abstract: A replaceable cover secured to the surface of a membrane positioned on a wafer carrier.

Abstract: Simultaneous double-side grinding of a plurality of semiconductor wafers involves positioning each wafer freely in a cutout of one of plural carriers which rotate on a cycloidal trajectory, wherein the wafers are machined between two rotating ring-shaped working disks, each disk having a working layer of bonded abrasive, wherein the form of the working gap between working layers is determined during grinding and the form of the working area of at least one disk is altered such that the gap has a predetermined form. The wafers, during machining, may temporarily overhang the gap. The carrier is optionally composed only of a first material, or is completely or partly coated with the first material such that during machining only the first material contacts the working layer, and the first material does not reduce the machining ability of the working layer.

Abstract: A substrate holding apparatus prevents a substrate from slipping out and allows the substrate to be polished stably. The substrate holding apparatus has a top ring body for holding and pressing a substrate against a polishing surface, and a retainer ring for pressing the polishing surface, the retainer ring being disposed on an outer circumferential portion of the top ring body. The retainer ring includes a first member made of a magnetic material and a second member having a magnet disposed on a surface thereof which is held in abutment against the first member.

Abstract: A chemical-mechanical polishing apparatus including a table top, a transfer station mounted on the table top, a plurality of polishing stations mounted on the table top, a plurality of washing stations, and a plurality of carrier heads supported by a support member rotatable about an axis. Each washing station is located between a first polishing station and either a second polishing station or the transfer station, and the transfer station and the plurality of polishing stations are arranged at approximately equal angular intervals about the axis.

Abstract: A polishing pad has a polishing layer and a backing layer secured to the polishing layer. The polishing layer has a polishing surface, a first thickness, a first compressibility, and a hardness between about 40 to 80 Shore D. The backing layer has a second thickness and has a second compressibility greater than the first compressibility. The first thickness, first compressibility, second thickness and second compressibility are such that the polishing surface deflects more than the thickness non-uniformity of the polishing layer under an applied pressure of 1.5 psi or less.

Abstract: A substrate polishing apparatus includes a substrate holding mechanism having a head for holding a substrate to be polished, and a polishing mechanism including a polishing table with a polishing pad mounted thereon. The substrate held by the head is pressed against the polishing pad on the polishing table to polish the substrate by relative movement of the substrate and the polishing pad. The substrate polishing apparatus also includes a substrate transfer mechanism for delivering the substrate to be polished to the head and receiving the polished substrate. The substrate transfer mechanism includes a substrate to-be-polished receiver for receiving the substrate to be polished, and a polished substrate receiver for receiving the substrate which has been polished.

Abstract: A carrier head that has a housing, a base assembly, a retaining ring, a carrier ring, and a flexible membrane is described. The base assembly is vertically movable relative to the housing. The retaining ring is connected to and vertically movable relative to the base assembly and has a lower surface configured to contact a polishing pad and an inner surface configured to circumferentially surround the edge of a substrate to retain the substrate. The carrier ring is connected to and vertically fixed relative to the base assembly, circumferentially surrounds the retaining ring to prevent lateral motion of the retaining ring, and has a bottom surface configured to contact a polishing pad.

Abstract: A polishing head for polishing machines, in particular for polishing optical surfaces, has a polishing plate that is connected to a rotationally drivable drive shaft. The polishing plate is articulated to, and rotates with, the drive shaft. A ball hexagonal socket joint provides the articulated connection. Rotating by means of the articulated connection, the polishing plate can follow the surface of the workpiece to be processed, so that the polishing covering on the polishing plate always rests on a maximally large area on the surface of the workpiece.

Abstract: A chemical mechanical polishing (CMP) system includes a rotating polishing table including a platen providing at least two pressure zones having different pressures; a sub-pad positioned on the platen, the sub-pad including a plurality of openings allowing for transmission of the different pressures therethrough; a fixed abrasive pad positioned on the sub-pad; and a pressure-creating system sealingly coupled to the platen for creating a different pressure in the at least two pressure zones, wherein the different pressures create topography on the fixed abrasive pad. A sub-pad and related method are also provided.

Abstract: A substrate holding apparatus is for holding a substrate such as a semiconductor wafer in a polishing apparatus for polishing the substrate to a flat finish. The substrate holding apparatus comprises a vertically movable member, and an elastic member for defining a chamber. The elastic member comprises a contact portion which is brought into contact with the substrate, and a circumferential wall extending upwardly from the contact portion and connected to the vertically movable member. The circumferential wall has a stretchable and contractible portion which is stretchable and contractible vertically.

Abstract: The present invention generally relates to a substrate transferring system. Particularly, the present invention relates to apparatus and method to effectively remove the chemical fume, vapor and other byproducts generated during a polishing process. One embodiment of the present invention provides an apparatus for polishing a substrate comprising a platen having a polishing surface configured to polish the substrate by contacting the substrate while moving relatively to the substrate, a polishing head configured to support the substrate and position the substrate to be in contact with the polishing surface during polishing, a solution nozzle configured to dispense a polishing solution on the polishing surface, and an exhaust assembly configured to remove fume, vapor and other byproducts generated during polishing.

Abstract: A substrate polishing apparatus includes a substrate holding mechanism having a head for holding a substrate to be polished, and a polishing mechanism including a polishing table with a polishing pad mounted thereon. The substrate held by the head is pressed against the polishing pad on the polishing table to polish the substrate by relative movement of the substrate and the polishing pad. The substrate polishing apparatus also includes a substrate transfer mechanism for delivering the substrate to be polished to the head and receiving the polished substrate. The substrate transfer mechanism includes a substrate to-be-polished receiver for receiving the substrate to be polished, and a polished substrate receiver for receiving the substrate which has been polished.

Abstract: A polishing apparatus polishes wafers at a high yield rate even if roll-off exists. The polishing apparatus polishes a wafer by applying a pressure between a polishing member (polishing pad) and the wafer held by a holding member (top ring) and moving the polishing member relative to the wafer. The polishing apparatus includes a top ring for holding the wafer, a pressure adjusting mechanism for adjusting a supporting pressure with which the wafer is supported on a supporting surface by a retainer ring, and a control unit for controlling the pressure adjusting mechanism to bring the supporting pressure to a desired pressure based on a roll off quantity of the wafer. The top ring comprises an air bag for pressing the wafer against the polishing pad, a retainer ring which surrounds the wafer, and an air bag for pressing the retainer ring.

Abstract: A substrate holding apparatus prevents a substrate from slipping out and allows the substrate to be polished stably. The substrate holding apparatus has a top ring body for holding and pressing a substrate against a polishing surface, and a retainer ring for pressing the polishing surface, the retainer ring being disposed on an outer circumferential portion of the top ring body. The retainer ring includes a first member made of a magnetic material and a second member having a magnet disposed on a surface thereof which is held in abutment against the first member.

Abstract: A polishing apparatus is provided for polishing wafers at a high yield rate even if roll-off exists. The polishing apparatus polishes a wafer by applying a pressure between a polishing member (polishing pad) 201 and the wafer held by a holding member (top ring) 52 and moving the polishing member relative to the wafer. The polishing apparatus includes a top ring 52 for holding the wafer, a pressure adjusting mechanism for adjusting a supporting pressure with which the wafer is supported on a supporting surface by a retainer ring, and a control unit for controlling the pressure adjusting mechanism to bring the supporting pressure to a desired pressure based on a roll off quantity of the wafer. The top ring comprises an air bag 202 for pressing the wafer against the polishing pad, a retainer ring which surrounds the wafer, and an air bag for pressing the retainer ring.

Abstract: A flexible membrane assembly for a wafer carrier in a CMP system. The flexible membrane assemble has a flat, flexible membrane joined to a rigid cylindrical sidewall.

Abstract: Methods and apparatus provide for a conformable polishing head for uniformly polishing a workpiece. The polishing head includes an elastic polishing pad mounted on an elastic membrane that seals a cavity in the polishing head. The cavity is pressurized to expand the membrane and press the polishing pad down on the top surface of the workpiece, such that the polishing pad conforms to the surface and applies a substantially uniform pressure distribution across the workpiece and thereby uniformly removes material across high and low spots on the workpiece.

Abstract: A carrier head that has a base assembly, a retaining ring assembly, a carrier ring, and a flexible membrane is described. The flexible membrane has a main portion and an outer annular portion, wherein a junction between the main portion and the outer annular portion comprises a peripheral edge hinge and an annular recess above the hinge along the outer wall of the outer annular portion.

Abstract: A polishing system includes a platen having a top surface to receive a polishing pad, a recess in the top surface, and a cavity inside the platen spaced from the recess, a carrier head to hold a surface of a substrate against the polishing pad on the platen, a monitoring module located in the cavity, the monitoring module including a light source and a detector, an optical head removably mounted in the recess in the top surface platen, and an optical fiber having a proximate end coupled to the monitoring module and a distal end held by the optical head holding the distal end of the optical fiber in a position to direct light through a window in the polishing pad to the surface of the substrate and receive reflected light from the surface of the substrate.

Abstract: A carrier head that has a base assembly, a retaining ring assembly, a carrier ring, and a flexible membrane is described. A carrier ring has an annular upper portion and an annular lower portion having a lower surface with a smaller inner diameter than the upper surface of the annular upper portion, wherein the carrier ring circumferentially surrounds a retaining ring and has a lower surface to contact a polishing pad.

Abstract: The polishing apparatus is capable of improving accuracy of polishing a work. The work is pressed onto a polishing cloth, with an elastic sheet, by a pressing force generated by second pressing means and applied to a carrier and inner pressure of a first fluid chamber generated by a fluid supplied thereto, so as to polish the work. The fluid, which has been downwardly supplied into the first fluid chamber, horizontally flows outward in the first fluid chamber, collides with a side wall of a concave part of a board-shaped member and flows upward, and then the fluid is discharged outside from a fluid outlet, thereby a fluid feeding member follows movement of the elastic sheet and maintains parallel to the elastic sheet, and the fluid feeding member is centered in the first fluid chamber.

Abstract: Disclosed is an apparatus for polishing media discs by removing or reducing scratches or substances from the surface of damaged discs, including computer data CDs, DVDs, gaming discs and other media discs. The apparatus enables removal or reduction of scratches and materials that prevent the information or data contained on the disc from being read by a conventional disc reading device. The polishing pressure and time are uniformly controlled at predetermined and precision levels sufficient to remove or reduce scratches from the surface of the disc. Also disclosed is a method of removing or reducing scratches from the surface of media discs by using the apparatus of the present invention. The method can be repeated as many times as necessary or desired in order to obtain a finely polished disc from which data is obtainable by conventional disc reading devices.

Abstract: A retainer is used with an apparatus for polishing a substrate. The substrate has upper and lower surfaces and a lateral, substantially circular, perimeter. The apparatus has a polishing pad with an upper polishing surface for contacting and polishing the lower face of the substrate. The retainer has an inward facing retaining face for engaging and retaining the substrate against lateral movement during polishing of the substrate. The retaining face engages a substrate perimeter at more than substantially a single discrete circumferential location along the perimeter.

Abstract: A substrate holding apparatus is for holding a substrate such as a semiconductor wafer in a polishing apparatus for polishing the substrate to a flat finish. The substrate holding apparatus comprises a vertically movable member, and an elastic member for defining a chamber. The elastic member comprises a contact portion which is brought into contact with the substrate, and a circumferential wall extending upwardly from the contact portion and connected to the vertically movable member. The circumferential wall has a stretchable and contractible portion which is stretchable and contractible vertically.

Abstract: Disclosed is a polishing method for polishing a surface of a structure for magnetic-head manufacture by CMP in the process of manufacturing a magnetic head using a ceramic substrate made of a ceramic material containing AlTiC, the structure including the ceramic substrate and one or more layers formed thereon, and having the surface to be polished. The polishing method uses a retainer ring made of a ceramic material containing AlTiC.

Abstract: The present invention relates to a substrate polishing apparatus and a substrate polishing method for polishing a substrate such as a semiconductor wafer to a flat finish. The substrate polishing apparatus includes a polishing table (100) having a polishing surface (101), a substrate holder (1) for holding and pressing a substrate (W) against the polishing surface (101) of the polishing table (100), and a film thickness measuring device (200) for measuring a thickness of a film on the substrate (W). The substrate holder (1) has a plurality of pressure adjustable chambers (22 to 25), and pressures in the respective chambers (22 to 25) are adjusted based on the film thickness measured by the film thickness measuring device (200).

Abstract: A method for making heated plane of a cooler obtain better flatness and roughness includes a grinder with a grinding plate and a fixture. Then, the cooler is arranged onto the fixture. Next, the abrasive is injected into the gap between the grinding plate and the heated plane, making the fixture press and clamp the cooler in a way, such that the heated plane of the cooler contacts the abrasive closely. Finally, the grinding plate is rotated to make at least one grinding process to the heated plane, making the heated plane obtain a surface with better roughness and flatness, further enhancing the contact tightness between the heated plane and a heating element, and therefore promoting the thermally conductive efficiency between the cooler and the heating element.

Abstract: The present invention relates to a substrate holding apparatus for holding and pressing a substrate against a polishing surface. The substrate holding apparatus includes a top ring body for holding the substrate, an elastic pad for contacting the substrate, and a support member for supporting the elastic pad. The substrate holding apparatus further includes a contact member mounted on a lower surface of the support member and disposed in a space formed by the elastic pad and the support member. The contact member has an elastic membrane for contacting the elastic pad. A first pressure chamber is defined in the contact member, and a second pressure chamber is defined outside of the contact member. The substrate holding apparatus also includes a fluid source for independently supplying a fluid into, or creating a vacuum in, the first pressure chamber and the second pressure chamber.

Abstract: A flexible membrane includes a horizontal central portion, a vertical portion coupled to the central portion, a thick rim portion coupled to the vertical portion, and an extension coupled to the thick rim portion. An outer surface of the horizontal central portion provides a mounting surface configured to receive a substrate. The thick rim portion has a thickness that is greater than a portion directly adjacent to the thick rim portion. The thick rim portion is between the extension and the vertical portion and a greatest dimension of the extension is less than the thickness of the thick rim portion.

Abstract: A carrier head for chemical mechanical polishing of a substrate includes a base and a flexible membrane extending beneath the base. The flexible membrane includes a central portion with an outer surface providing a substrate receiving surface, a perimeter portion connecting the central portion to the base, and at least one flap extending from an inner surface of the central portion. The flap divides a volume between the flexible membrane and the base into a plurality of chambers, and the flap includes a laterally extending first section and an angled second section extending beneath the first section and connecting the laterally extending first section to the central portion.

Abstract: A polishing article includes a polishing layer having a polishing surface and a solid light-transmissive window in the polishing layer, the window having a first non-linear edge that extends along a first axis parallel to the polishing surface, the first non-linear edge including a plurality of projections and a plurality of recesses extending parallel to the polishing surface and disposed in an alternating pattern along the first axis.

Abstract: The present invention is a polishing head in which a rubber film is formed in a boot shape in such a manner that a position where the rubber film is held by a mid plate is distantly positioned from a work holding portion; an end portion of the boot shaped rubber film is formed in O-ring shape so that the rubber film is held by the mid plate with decreasing an area of contact between the mid plate and the rubber film as much as possible. As a result, there is provided a polishing head with rubber chuck method in which an occurrence of a surface defect, such as a scratch, on a surface of the work is suppressed as much as possible and the work can be uniformly and stably polished to the outer periphery.

Abstract: A method and apparatus for chemical mechanical polishing of substrates, and more particularly a method and apparatus related to a carrier had for use in chemical mechanical polishing is provided. In one embodiment the carrier head assembly comprises a base assembly for providing support to the substrate, a flexible membrane mounted on the base assembly having a generally circular central portion with a lower surface that provides a substrate mounting surface, and a plurality of independently pressurizable chambers formed between the base assembly and the flexible membrane, comprising an annular outer chamber and a non-circular inner chamber, is provided.

Abstract: A chemical mechanical polishing (CMP) device for processing a wafer is provided which includes a plate for supporting the wafer to be processed in a face-up orientation, a polishing head opposing the plate, wherein the polishing head includes a rotatable polishing pad operable to contact the wafer while the polishing pad is rotating, and a slurry coating system providing a slurry to the polishing pad for polishing the wafer.

Abstract: At least one wafer is suspended on a respective jig shaft above a polishing platen. The degree of parallelism between the wafer and the polishing platen is controlled using a three-point suspension, which allows for planar pitch adjustments using vertical actuation algorithms. As the wafer is lowered into contact against the polishing platen, a load cell senses how much of the weight of the jig shaft, wafer mount and wafer continues to be supported by the jig. The vertical displacement of the wafer is controlled using a linear actuator responsive to a signal from the load cell. Vertical actuation of the wafer serves to increase or decrease this amount of supported weight, in turn decreasing or increasing the amount of applied downforce exerted between the wafer and the platen. A compression spring is used to increase the resolution of the pressure control. Finally, system components exposed to the work environment are encapsulated by chemically resistive components to prevent corrosion of system components.

Abstract: A polishing apparatus is used for polishing a substrate such as a semiconductor wafer to a flat mirror finish. The polishing apparatus includes a polishing table (100) having a polishing surface (101a), a top ring body (2) configured to hold and press a substrate against the polishing surface (101a), and a retainer ring (3) provided at an outer peripheral portion of the top ring body (2) and configured to press the polishing surface (101a). A fulcrum for receiving a lateral force applied from the substrate to the retainer ring (3) during polishing of the substrate is located above a central portion of the substrate.

Abstract: A polishing pad used in semiconductor polishing process is provided in the present invention and a pressure sensitive adhesive is used to couple the polishing pad. The polishing pad includes a substrate, and the substrate includes a polishing surface and a reverse surface corresponding to the polishing surface. The polishing pad is characterized by: a pressure sensitive adhesive formed on the reverse surface of the substrate and used to couple with a bottom layer, and the horizontal adhesion of the pressure sensitive adhesive is higher than the vertical adhesion of the pressure sensitive adhesive.

Abstract: To provide a retainer ring by which an object to be polished can be uniformly polished, and deterioration thereof can be suppressed, and it does not take time to recycle, and a polishing machine having the retainer ring. The retainer ring 1 includes: a first annular portion 11 for surrounding an outer circumferential portion of the object to be polished and made of resin; and a second annular portion 12 provided on the first annular portion 11 and having a mechanical strength higher than that of the first annular portion 11. In rim portions of the first annular portion 11 and the second annular portion 12, a fixing portion 13 for fixing the first annular portion 11 and the second annular portion 12 with mechanical joining is provided. The first annular portion 11 protrudes beyond the fixing portion 13 toward the opposite side of the second annular portion 12.

Abstract: A pressure control system of a wafer polishing apparatus includes a main input air pressure regulator, an air branch conduit, a plurality of first pipes, a plurality of auxiliary air pressure regulators, a plurality of second pipes, and a plurality of air pressure controlling devices. The air branch conduit is connected with the main input air pressure regulator. The first pipes are connected between the air branch conduit and the auxiliary air pressure regulators. The second pipes are connected between the auxiliary air pressure regulators and the air pressure controlling devices. Accordingly, the air pressure controlling devices can control the pressure outputted from a polishing head of the wafer polishing apparatus to a surface of a wafer.

Abstract: A chemical mechanical polishing apparatus includes a container, a platen, first and second brushes, a polishing pad, a carrier, and a slurry supplier. The container has a bottom wall and a side wall. The side wall has an inwardly-extending upper portion. The platen is supported over the bottom wall. The platen is positioned lower than the inwardly-extending upper portion. The first brush brushes the side wall. The first brush is fixed to a side surface of the platen. The second brush brushes a side surface of the platen. The second brush is fixed to the bottom wall. The polishing pad is attached to the platen. The carrier presses a workpiece to be polished against the polishing pad. The slurry supplier supplies a slurry onto the polishing pad.

Abstract: An apparatus for dressing a polishing pad is described. The apparatus includes a dresser drive shaft which is rotatable and vertically movable, a dresser flange coupled to the dresser drive shaft and configured to secure a dressing member thereto, a spherical bearing provided in the dresser flange and configured to allow the dressing member to tilt with respect to the dresser drive shaft, and a spring mechanism configured to generate a force against a tilting motion of the dressing member.

Abstract: In the present invention, a holding table incorporating a heater is provided, for example, in a treatment container of a planarization unit. A pressing plate having a lower surface formed flat is disposed above the holding table. The pressing plate is movable in the vertical direction and can lower to the holding table to press a resist film on the substrate from above. The pressing plate intermittently presses the upper surface of the resist film to planarize the upper surface while the heater is heating the substrate on the holding table at a predetermined temperature to dry the resist film. According to the present invention, a coating film applied on the substrate can be sufficiently planarized and dried.