Abstract: A subpad support for use in a web format or belt format polishing apparatus for polishing one or more layers of semiconductor device structures. The subpad support includes a subpad retention element for non-adhesively securing the subpad thereto. The subpad support may also include one or more lips protruding therefrom so as to at least substantially inhibit lateral movement of the subpad relative to the subpad support. Polishing apparatus including the subpad support are also disclosed. The polishing pads of such polishing apparatus may be at least partially moved away from the subpad or subpad support so as to facilitate assembly of a subpad with the subpad support or removal of the subpad from the subpad support without damaging the polishing pad. Methods of removably securing a subpad to the subpad support, removing the subpad from the subpad support, and replacing another subpad on the subpad support, as well as polishing methods, are also disclosed.

Abstract: A substrate processing apparatus is used for removing surface irregularities occurring on a peripheral portion (a bevel portion, an edge portion, and a notch) of a substrate, such as a semiconductor wafer, and films deposited as a contaminant on the peripheral portion of such a substrate. The substrate processing apparatus includes an edge-portion polisher for pressing a polishing tape against an edge portion of a substrate and causing relative movement between the polishing tape and the substrate to polish the edge portion of the substrate, and a bevel-portion polisher for pressing a polishing tape against a bevel portion of the substrate and causing relative movement between this polishing tape and the substrate to polish the bevel portion of the substrate.

Abstract: A sanding station for a belt sanding machine includes at least an endless sanding belt guided over deflection rollers and a pressure segment belt circulating within the sanding belt for pressing the sanding belt against the workpiece. The running direction of the pressure segment belt is oriented transversely to the running direction of the sanding belt.

Abstract: A lapping apparatus lapping a work having a pre-machined surface comprises a lapping film which includes a thin substrate having a surface provided with abrasive grains, a shoe disposed at a back surface side of the lapping film, a shoe driving unit which drives the shoe toward the work in order to press the abrasive-grained surface of the lapping film to the pre-machined surface of the work, a rotational driving unit which drives the work rotationally, a detecting unit which detects the position of the rotating work in the rotating direction, and a controlling unit which controls the pressing force of the shoe driving unit so as to drive the shoe correspondingly to the position of the work in the rotating direction during machining.

Abstract: A method and assembly for generating a hydrodynamic air bearing is described, wherein at least one rotor is rotated to force air through channels defined in a platen located adjacent to a linear belt and the forced air is directed to the linear belt. The method includes rotating at least one rotor with a motor such that the rotor forces air through channels defined in a platen, and the air is directed toward a linear belt. The assembly includes a housing in which a platen, rotors, and a bearing plate are located.

Abstract: An air platen assembly is described and includes a platen that has a plurality of concentric rings. Each of the rings has a plurality of openings in order to provide a cushion of air to a CMP belt. At least one of the rings extends beyond an outer edge of a wafer to be planarized by the CMP belt. A support is attached with the platen and has a plurality of air ports for pressurized air to pass to the rings of the platen. A gasket is positioned between the support and the platen and has a plurality of cutouts that align with the openings and the air ports. A base is also included and supports the support.

Abstract: A substrate processing apparatus polishes a to-be-polished portion of a semiconductor substrate with a polishing tape. Part of the polishing tape is heated in advance. Part of the polishing tape is deformed conforming to a shape of the to-be-polished portion. Part of the deformed polishing tape is brought into contact with the to-be-polished portion of the substrate. The substrate and polishing tape are moved relative to each other.

Abstract: An apparatus for use in a chemical mechanical planarization (CMP) system is provided. The apparatus includes a platen capable of introducing fluid beneath a polishing pad and a platen support cover configured to surround the platen. The platen is disposed at a first level and the platen support cover is disposed at a second level, the first level being lower relative to the second level. Both the platen and the platen support cover are configured to be disposed below the polishing pad such that the polishing pad is closer to the second level than the first level. The platen support cover has a width at the second level that is substantially equal around the platen. An apparatus and method for controlling pressure beneath a polishing pad is also provided.

Abstract: A chemical mechanical planarization (CMP) system is provided. The system includes a polishing surface and a platen disposed along an underside of the polishing surface. A retaining ring surrounds the platen. The retaining ring includes a lower annular sleeve and an upper annular sleeve moveably disposed over the lower annular sleeve. A method for reducing a consumption of compressed dry air (CDA) during a chemical mechanical planarization (CMP) operation is also described.

Abstract: Generally, a method and apparatus for supporting a web of polishing material. In one embodiment, the apparatus includes a platen adapted to support the web, a frame assembly, and one or more flexures coupled between the platen and the frame assembly. The flexure allows the frame assembly to be moved in relation to the platen. When the frame assembly is in an extended position relative to the platen, the web is placed in a spaced-apart relation to the platen.

Abstract: The present invention relates to methods and apparatus that allow for chemical mechanical polishing using a flexible pad and variable fluid flow for variable polishing.

Abstract: An invention improves edge performance in chemical mechanical polishing processes. A method operation provides a wafer head above a wafer. The wafer head includes a first active retaining ring capable of extension and retraction. Another operation provides a polishing belt below the wafer head, and provides below the polishing belt a platen having a second active retaining ring capable of extension and retraction. Another operation controls positions of the first active retaining ring and the second active retaining ring to provide positional control for the polishing belt, thus adjusting and controlling the removal rate at the edge of the wafer.

Abstract: An apparatus for smoothing a surface of a rotatably supported substrate includes a base plate, a block having an extending arm structure and being attached to the base plate so as to be movable along the surface of the base plate, a roller attached to a tip portion of the arm structure in a direction perpendicular to the base plate, a mobile member attached to the arm structure so as to be movable perpendicularly to the axial direction of the roller, a tape-running device attached to the base plate for feeding and taking up a polishing tape through the roller so as to advance the tape around the mobile member, and a moving device attached to the arm structure of the block for moving the mobile member.

Abstract: An abrasive tape is supplied to a tape head by a tape supply unit and taken up from the tape head by a tape take-up unit. The tape head presses the abrasive tape against a surface of an object under polish, which is rotated by a rotating unit. A tape head pressuring unit utilizes a voice coil motor, for example. Since the tape head pressuring unit generates a pressuring force for pressuring the tape head using the electromagnetic force, it is able to set a minute pressuring force by controlling a drive signal, and to obtain the fine adjustment of the pressuring force easily by controlling the electric signal. Therefore, it becomes possible to press the abrasive tape against the surface of the object under polish with a desired low pressure.

Abstract: A single-sided finishing apparatus is provided having a plurality of finishing stations with rotating transfer stations positioned therebetween. A hold down system presents the edge of the workpiece to the finishing head. The rotating transfer station includes a clamp for grasping a leading corner of a workpiece while rollers continue to drive the workpiece forward, thereby rotating the workpiece 90°.

Abstract: A sand-belt finishing machine includes a main frame, at least one grinding device, a conveyor platform mounted between the grinding device and the main frame, and a lift device mounted between the conveyor platform and the main frame for adjusting the position of the conveyor platform. The lift device includes a propeller shaft, a shaft, a support plate, a driving rod, and a slide rod. Thus, the distance between the grinding devices and the conveyor platform can be adjusted arbitrarily by the lift device, so that the grinding devices can be used to grind workpieces of different thickness.

Abstract: A linear chemical mechanical polishing apparatus that is equipped with a programmable pneumatic support platen and a method for controlling the polishing profile on a wafer surface during a linear CMP process are disclosed. The programmable pneumatic support platen is positioned juxtaposed to a bottom surface of a continuous belt for the linear CMP apparatus and positioned corresponding to a position of the wafer carrier so as to force the polishing pad against the wafer surface to be polished. The support platen has a predetermined thickness, a plurality of apertures through the thickness and a plurality of openings in a top surface in fluid communication with a gas source through the plurality of apertures.

Abstract: A chemical mechanical polishing apparatus has a substrate holder, a polishing belt, and a backing member positioned on a side of the polishing belt opposite the substrate holder. The polishing belt has a polishing surface to contact at least a portion of the substrate held by the substrate holder. The polishing belt is movable in a first direction in a generally linear path relative to the substrate. The polishing belt has a plurality of grooves formed therein.

Abstract: An air platen assembly is described and includes a platen that has a plurality of concentric rings. Each of the rings has a plurality of openings in order to provide a cushion of air to a CMP belt. At least one of the rings extends beyond an outer edge of a wafer to be planarized by the CMP belt. A support is attached with the platen and has a plurality of air ports for pressurized air to pass to the rings of the platen. A gasket is positioned between the support and the platen and has a plurality of cutouts that align with the openings and the air ports. A base is also included and supports the support.

Abstract: An invention is provided for removal rate profile manipulation during a CMP process. An apparatus of the embodiments of the present invention includes an actuator capable of vertical movement perpendicular to a polishing surface of a polishing pad. The actuator is further capable of flexing the polishing pad independently of a pad support device. Also included in the apparatus is an actuator control mechanism that is in communication with the actuator. The actuator control mechanism is capable of controlling an amount of vertical movement of the actuator, allowing the actuator to provide local flexing of the polishing pad to achieve a particular removal rate profile. The actuator can also be capable of horizontal movement parallel to the polishing surface of the polishing pad.

Abstract: A method and apparatus for planarizing a microelectronic substrate. In one embodiment, the apparatus can include an elongated, non-continuous polishing pad oriented at an angle relative to the horizontal to allow planarizing liquids and materials removed from the microelectronic substrate to flow off the polishing pad under the force of gravity. Two such polishing pads can be positioned opposite each other in a vertical orientation and can share either a common platen or a common substrate carrier. The polishing pads can be pre-attached to both a supply roll and a take-up roll to form a cartridge which can be easily removed from the apparatus and replaced with another cartridge.

Abstract: An invention is disclosed for improving edge performance in a chemical mechanical polishing process is disclosed. The system includes a wafer head disposed above a wafer, where the wafer head includes a first active retaining ring capable of extension and retraction. Below the wafer head is a polishing belt, and disposed below the polishing belt is a platen having a second active retaining ring capable of extension and retraction. During operation the first active retaining ring and the second active retaining ring can be controlled to provide positional control for the polishing belt, thus adjusting and controlling the removal rate at the edge of the wafer.

Abstract: A sand-belt finishing machine having a sand-belt replacement mechanism includes a support rack, a first roller, a second roller, an upright rod, an elastic member, a sand belt, and a pull lever. When the upright rod is moved by the pull lever to compress the elastic member, the distance between the first roller and the second roller is shortened. When the upright rod is released by the pull lever, the upright rod is returned to its original position by the elastic member, so that the distance between the first roller and the second roller is increased. Thus, the sand belt can be mounted on and detached from the first roller and the second roller rapidly, easily and conveniently, thereby facilitating the user replacing the sand belt.

Abstract: The invention relates to a method for improving wear and tear on support bodies (54) for plates or grinding belts in large-scale grinders (1). The support body (54) has a base body (18), onto which an abrasion-resistant primary layer of at least 0.3 mm thickness is applied using a thermal spraying process. This is configured as an inhomogeneous layer with an oxide entrapment of a specific porosity. If the support body (54) is a roll for the forward feed unit (20, 28), the roll body is roughened and a primer and the primary layer are applied using a thermal spraying process. Approximately 50% of the primary layer consists of chromium steel, in particular 13% chromium steel and an abrasion-resistant hard material and said primary layer provides a coarse surface with good grip that is resistant to wear and tear. If the support body (54) is a grinding-belt contact roll (9, 9′), the latter is polished after the thermal spraying process.

Abstract: An air platen assembly is described and includes a platen that has a plurality of concentric rings. Each of the rings has a plurality of openings in order to provide a cushion of air to a CMP belt. At least one of the rings extends beyond an outer edge of a wafer to be planarized by the CMP belt. A support is attached with the platen and has a plurality of air ports for pressurized air to pass to the rings of the platen. A gasket is positioned between the support and the platen and has a plurality of cutouts that align with the openings and the air ports. A base is also included and supports the support.

Abstract: An apparatus is provided for polishing balls that comprises a cradle that is supported for rotation about a first axis. The cradle is shaped to support a spherical object and includes a ball spinner positioned and adapted to spin the spherical object in the cradle about a second axis that is oriented at an angle to the first axis. The apparatus also comprises a first drive operably connected to the cradle for rotating the cradle about the first axis at a first speed of rotation, and a second drive connected to the ball spinner to spin the spherical object about the second axis at a second speed of rotation.

Abstract: A method and apparatus for planarizing a microelectronic substrate. In one embodiment, the apparatus can include an elongated, non-continuous polishing pad oriented at an angle relative to the horizontal to allow planarizing liquids and materials removed from the microelectronic substrate to flow off the polishing pad under the force of gravity. Two such polishing pads can be positioned opposite each other in a vertical orientation and can share either a common platen or a common substrate carrier. The polishing pads can be pre-attached to both a supply roll and a take-up roll to form a cartridge which can be easily removed from the apparatus and replaced with another cartridge.

Abstract: A platen for use in chemical mechanical planarization (CMP) systems is disclosed. The platen is arranged below a linear polishing pad and designed to apply a controlled fluid flow to the underside of the linear polishing pad. The platen includes a leading zone containing a first plurality of output holes. The leading zone is oriented more proximate to an upstream region of the linear polishing pad. The platen also includes a trailing zone containing a second plurality of output holes. The trailing zone is oriented more proximate to a downstream region of the linear polishing pad. The leading zone and the trailing zone are independently controlled and designed to output the controlled fluid flow independently from each of the first plurality of output holes and the second plurality of output holes.

Abstract: A linear polishing apparatus for polishing a semiconductor substrate including a novel polishing belt arrangement with at least two polishing belts forming a continuous loop. Each belt having an outside polishing surface and an inside smooth surface. The belts are spaced alongside each other sharing a common axis at each end. The belts are looped around a pair of rollers making up a driver roller at one end and a driven roller at the other end. A platen member interposes each belt and is placed between the pairs of rollers. The platen provides a polishing plane and supporting surface for the polishing belts. The polishing plane includes a plurality of holes communicating with an elongated plenum chamber underlying the plane. The chamber supplies a compressed gas to impart an upward pressure against the polishing belts. The driver rollers are coupled to separate motors to independently drive and control at least said two of the polishing belts.

Abstract: An apparatus for improving performance of a wafer polishing apparatus is described. The apparatus includes a platen in a support assembly having a plurality of fluid channels and at least one region of altered topography positioned on a portion of the platen surface.

Abstract: An inline-ready method of finishing the surface of a long material (W) capable of preventing any environmental problem from occurring and the mechanical properties of the long material from deteriorating, comprising the steps of holding the long material (W) by two or more elastic endless belts (1) with a specified force, rotating the elastic endless belts (1) in the same direction as or in the reverse direction to the moving direction of the long material by moving the long material (W) and increasing or decreasing the rotating speed of the elastic endless belts (1) more than or less than the moving speed of the long material, and loading powder and granular grinding material (S) between the elastic endless belts (1), characterized in that the grinding material (S) is moved relative to the long material (W) to rub the grinding material (S) against the long material (W) so as to finish the surface of the long material (W).

Abstract: A retaining ring is provided. The retaining ring includes a lower annular sleeve having a base. The base has an inner sidewall and an outer sidewall extending therefrom. The lower annular sleeve has at least one hole defined therein. An upper annular sleeve is moveably disposed over the lower annular sleeve. The upper annular sleeve has a top, that has at least one hole defined therein. The top has an inner sidewall and an outer sidewall extending therefrom. A method for reducing a consumption of compressed dry air (CDA) during a chemical mechanical planarization (CMP) operation is also described.

Abstract: A polishing bar is provided with a plurality of backings that are carried via blocks of impact absorbent material on a bar of greater stiffness. Each backing is shaped with two surfaces at an angle to each other. A polishing tape is disposed over the angled surfaces of each backing. The portion of the polishing tape over the forward surface of the backing is employed to polish the angled edge of the top wafer of a rotating bonded wafer pair.

Abstract: The wafer edge processing unit may be a stand alone unit or may be incorporated in existing grinding machines. The processing unit employs a plurality of tapes which are coated with differing grades of grit to sequentially polish the edge of a rotating wafer or to remove an edge bead from a processed wafer or the other substrate. The tapes are mounted on a backing block which is rotated to move the tapes from a line contact with the top bevel of the wafer to a line contact with the bottom bevel of the wafer. Fresh surfaces of the tapes are presented to successive wafers by rotating the spools on which the tapes are mounted. The wafer may be moved in small increments along a Y-axis and/or an X-axis relative to a tape during polishing to improve the polishing operation.

Abstract: An apparatus and method for in-situ monitoring of thickness during chemical-mechanical polishing (CMP) of a substrate using a polishing tool and a film thickness monitor. The tool has an opening placed in it. The opening contains a monitoring window secured in it to create a monitoring channel. A film thickness monitor (comprising an ellipsometer, a beam profile reflectometer, or a stress pulse analyzer) views the substrate through the monitoring channel to provide an indication of the thickness of a film carried by the substrate. This information can be used to determine the end point of the CMP process, determine removal rate at any given circumference of a substrate, determine average removal rate across a substrate surface, determine removal rate variation across a substrate surface, and optimize removal rate and uniformity.

Abstract: A polishing tool includes a polish pad, a bladder, a fluid, and a flux guide. A bladder containing fluid supports the polishing pad that is positioned adjacent to a surface to be polished. Flux guides positioned along a portion of the bladder direct a field or a magnetic flux to selected locations of the bladder. The method of polishing a surface adjusts the field or the magnetic flux emanating from the flux guides which changes the mechanical properties of the fluid. By adjusting the magnitude of the field or level of magnetic flux flowing from the flux guides independent pressure adjustments occur at selected locations of the bladder that control the polishing profile of the surface.

Abstract: An invention is disclosed for improved performance in a CMP process using a pressurized membrane as a replacement for a platen air bearing. In one embodiment, a platen for improving performance in CMP applications is disclosed. The platen includes a membrane disposed above the platen, and a plurality of annular bladders disposed below the membrane, wherein the annular bladders are capable of exerting force on the membrane. In this manner, zonal control is provided during the CMP process.

Abstract: In a recording medium manufacturing method for obtaining a recording medium by effecting a surface smoothing treatment on a surface smoothing treatment surface of a surface of a medium, the surface smoothing treatment surface of the medium is locally pressed by a polishing work tape having a pressure area less than 1 mm, more preferably, less than 0.5 mm with respect to both radial direction and tangential direction relative to rotation of the medium. In a polishing work of recording medium manufacturing process, a problem of occurrence of defects such as scratches on the surface layer can be improved, whereby yield can be increased and mass-productivity can be improved.

Abstract: An air platen assembly is described and includes a platen that has a plurality of concentric rings. Each of the rings has a plurality of openings in order to provide a cushion of air to a CMP belt. At least one of the rings extends beyond an outer edge of a wafer to be planarized by the CMP belt. A support is attached with the platen and has a plurality of air ports for pressurized air to pass to the rings of the platen. A gasket is positioned between the support and the platen and has a plurality of cutouts that align with the openings and the air ports. A base is also included and supports the support.

Abstract: A method for monitoring consumable performance in a processing tool comprises storing a performance model of the processing tool; receiving a consumable item characteristic of a consumable item in the processing tool; determining a predicted processing rate for the processing tool based on the consumable item characteristic and the performance model; determining an actual processing rate of the processing tool; and determining a replacement interval for the consumable item based on at least the actual processing rate. A processing system includes a processing tool and an automatic process controller. The processing tool is adapted to process wafers and includes a consumable item.

Abstract: A method and apparatus for planarizing a microelectronic substrate. In one embodiment, the apparatus can include an elongated polishing pad that is moved over a platen either between or during the planarization cycles, and a support pad that is moved along with the polishing pad. The support pad can be an elongated member that extends between a supply roller and a take-up roller, or can include a continuous member that extends around the spaced apart rollers. The platen can also be movable along with the support pad and can be supported by fluid jets, rollers, or a rotating bladder. Cleaning devices and/or milling devices can treat the surfaces of the polishing pad, the support pad and/or the platen to reduce the likelihood for contaminants to become caught between these components as they engage with each other.

Abstract: A polishing apparatus has a feed reel for feeding a polishing tape wound thereon and having a polishing surface, a take-up reel for reeling up the polishing tape from the feed reel, a presser for pressing the polishing tape between the feed reel and the take-up reel against a surface, to be polished, of a workpiece, and a motor for rotating the take-up reel. The feed reel, the take-up reel, and the presser are housed in a cartridge, which is detachably held by a cartridge holder.

Abstract: A method and apparatus for releasably attaching a planarizing medium, such as a polishing pad, to the platen of a chemical-mechanical planarization machine. In one embodiment, the apparatus can include several apertures in the upper surface of the platen that are coupled to a vacuum source. When a vacuum is drawn through the apertures in the platen, the polishing pad is drawn tightly against the platen and may therefore be less likely to wrinkle when a semiconductor substrate is engaged with the polishing pad during planarization. When the vacuum is released, the polishing pad can be easily separated from the platen. The apparatus can further include a liquid trap to separate liquid from the fluid drawn by the vacuum source through the apertures, and can also include a releasable stop to prevent the polishing pad from separating from the platen should the vacuum source be deactivated while the platen is in motion.

Abstract: A platen for use in chemical mechanical planarization (CMP) systems is disclosed. The platen is arranged below a linear polishing pad and designed to apply a controlled fluid flow to the underside of the linear polishing pad. The platen includes a leading zone containing a first plurality of output holes. The leading zone is oriented more proximate to an upstream region of the linear polishing pad. The platen also includes a trailing zone containing a second plurality of output holes. The trailing zone is oriented more proximate to a downstream region of the linear polishing pad. The leading zone and the trailing zone are independently controlled and designed to output the controlled fluid flow independently from each of the first plurality of output holes and the second plurality of output holes.

Abstract: A polishing apparatus includes a lapping tape for polishing a surface of a magnetic disc, a tape supply unit for supplying the lapping tape, a varnisher roller for pressing the lapping tape onto the surface of the magnetic disc, and a pressing unit for pressing the lapping tape to the surface of the magnetic disc by way of the varnisher roller. The pressing unit is constituted by a swing lever having the varnisher roller at one end portion, and a balance adjusting unit. The balance adjusting unit sets the pressing force to zero by establishing the balance of the swing lever, and then breaks the balance so as to press the lapping tape to the surface of the magnetic disc by way of the varnisher roller with a desired pressing force.

Abstract: A polishing system such as a chemical mechanical belt polisher includes a hydrostatic fluid bearing that supports polishing pads and incorporates one or more of the following novel aspects. One aspect uses compliant surfaces surrounding fluid inlets in an array of inlets to extend areas of elevated support pressure around the inlets. Another aspect modulates or reverses fluid flow in the bearing to reduce deviations in the time averaged support pressure and to induce vibrations in the polishing pads to improve polishing performance. Another aspect provides a hydrostatic bearing with a cavity having a lateral extent greater than that of an object being polished. The depth and bottom contour of cavity can be adjusted to provide nearly uniform support pressure across an area that is surrounded by a retaining ring support. Changing fluid pressure to the retaining ring support adjusts the fluid film thickness of the bearing.

Abstract: A machine for grinding cylindrical bearing surfaces on parts, in particular journals and/or crank pins on crankshafts, using an abrasive belt, includes a support on which three abrasive belt clamping members are mounted in a triangle and mobile in directions that converge toward the axis of the bearing surface to be ground. Each clamping member carries at least one applicator shoe conformed to press the abrasive belt against the bearing surface along a surface essentially limited to a generatrix parallel to the axis of the bearing surface. The shoe is preferably made from an elastomer having a Shore hardness at most equal to 100 and has a cylindrically curved applicator surface with a radius of curvature less than the radius of curvature of the bearing surface.

Abstract: Methods and machines for planarizing microelectronic substrate assemblies using mechanical and/or chemical-mechanical planarizing processes. One machine in accordance with an embodiment of the invention includes a table having a support surface with a planarizing zone, an elongated polishing pad configured to move across the support surface of the table along a pad travel path, and a pad advancing mechanism coupled to the pad. The elongated pad can have a length along an elongated dimension extending along the pad travel path, an elongated first edge, an elongated second edge opposite the first edge, an elongated first side region extending along the first edge, an elongated second side region extending along the second edge, and an elongated medial region having a width between the first and second side regions. The pad advancing mechanism can include a first roller about which an unused portion of the pad is wrapped and a second roller about which a used portion of the pad is wrapped.

Abstract: A sander for smoothing curvilinear surfaces includes a horizontal support surface having top and bottom sides. The support surface has two sets of inner and outer arcuate slots thereon. The inner arcuate slots each have idler rollers thereabove secured to a pivoting, spring biased circular plate therebelow. A continuous sanding belt encompasses the idler rollers and a drive roller and is moved along a substantially triangular path with a motor means. A section of the path defines a sanding portion immediately adjacent to which is a flexible plate. An adjustment mechanism is provided to bend the plate to a desired configuration to form a curved sanding portion. The plate has an anchoring post on each side that is received within an outer arcuate slot and is secured to the circular plate therebelow. The plates, idler rollers and anchoring posts maintain tension on the belt regardless of the orientation of the sanding surface.

Abstract: A hand-held belt sander has a housing, an on-off switch and a power supply conductor supported by the housing, a motor and a transmission received in the housing, a sanding belt, a driving roller driven by the motor and driving the sanding belt, a sliding shoe provided with a base, a deviating roller arranged so that said sanding belt is guidable over the deviating roller and the base of the sliding shoe, a unit for centering the sanding belt, a unit for clamping the sanding belt, the deviating roller and the driving roller have different diameters so that the sanding belt is guided inclinedly, the housing being elongated and the sanding belt being guided on guiding parts which are introduced in a rear region of the elongated housing so that with together with the sanding belt in a front region of the elongated housing a centrally forwardly extending, freely projecting, wedge tip-shaped contour is formed so that the hand-held belt sander as a whole has a lance-like contour.