Abstract: Systems and methods control abrading operations of an abrading machine by sensing characteristics of an abrading article installed on the abrading machine. When a problem is discovered by sensing the article, appropriate actions may be taken. As one example, the abrading article may be sensed to determine whether the abrading article has been installed with an abrasive side facing the wrong direction. An alert allows an operator to reinstall the article. As another example, the abrading article may be sensed to determine whether splicing tape is present to hold two pieces of abrading tape together. The article may be advanced until the splicing tape is beyond an abrading zone. As another example, the abrading article may be sensed to determine whether the abrading article has stopped moving while the article drive is advancing because the article has broken. An alert allows an operator to repair the break.

Abstract: A bowling ball resurfacing apparatus comprises a housing, first and second vertical support rollers mounted to the housing for rotation about parallel vertical axes, each of the vertical support rollers adapted to make contact with the surface of the bowling ball at one lateral bottom side of the bowling ball, first and second horizontal support rollers mounted to the housing for supporting the bowling ball in cooperation with the vertical support rollers, each of the horizontal support rollers rotatable about horizontal axes and adapted to make contact with the surface of the bowling ball at the other lateral bottom side of the bowling ball, drive motors for causing the support rollers to rotate, and a grinding-and-polishing wheel assembly for making frictional contact with the surface of the bowling ball to grind or polish the bowling ball.

Abstract: A method for cleaning a magnetic head using a cleaning tape comprising a substrate and a cleaning layer, wherein the cleaning tape has a stiffness of 2 or less in a width direction, and the magnetic head has trenches substantially parallel to a sliding direction of the cleaning tape.

Abstract: An apparatus is provided for polishing a substrate. The apparatus includes a polishing pad configured to traverse from at least a first point to a second point. A first sensor is located near the first point and oriented so as to sense an incoming temperature of the polishing pad. A second sensor is located near the second point and oriented so as to sense an outgoing temperature of the polishing pad. A difference between the incoming temperature and the outgoing temperature is then used to determine endpoint of a polishing operation.

Abstract: An air platen assembly is described and includes a platen that has a plurality of concentric rings. Each of the rings has a plurality of openings in order to provide a cushion of air to a CMP belt. At least one of the rings extends beyond an outer edge of a wafer to be planarized by the CMP belt. A support is attached with the platen and has a plurality of air ports for pressurized air to pass to the rings of the platen. A gasket is positioned between the support and the platen and has a plurality of cutouts that align with the openings and the air ports. A base is also included and supports the support.

Abstract: An invention is provided for a platen for use in a CMP system. The platen includes an inner set of pressure sub regions capable of providing pressure to a polishing pad disposed above the platen. Each of the inner pressure sub regions is disposed below a wafer and within a circumference of the wafer. In addition, the platen includes an outer set of pressure sub regions capable of providing pressure to a polishing pad. Each of the outer set of pressure sub regions is disposed below the wafer and outside the circumference of the wafer. In this manner, the outer set of pressure sub regions is capable of shaping the polishing pad to achieve a particular removal rate.

Abstract: An endless belt for a belt type polishing machine comprises a support fabric and a polymer layer of relatively low hardness. The polymer layer is formed with drainage grooves. The support fabric may comprise a non woven or woven material, or a membrane with oriented reinforcing yarns. A further version comprises a spiral-link fabric supporting a woven or non woven layer carrying the polymer layer. The polymer layer may be a double layer, the upper of which is either harder or softer than the lower layer.

Abstract: Methods and a platen control parameters of a removal rate characteristic in chemical mechanical planarization, while allowing a low-cost polishing pad to be used especially in fast edge operations, and while reducing the amount of fluid used to support the polishing pad. Platen configuration provides fluid pressure control to reduce leakage of fluid from beneath the polishing pad, and contributes to control of a location of an inflection point of the removal rate characteristic. Another configuration controls a shape of a section of the removal rate characteristic between the inflection point and a leading wafer edge.

Abstract: The present invention relates to methods and apparatus that allow for chemical mechanical polishing using a flexible pad and variable fluid flow for variable polishing.

Abstract: An apparatus for smoothing a surface of a rotatably supported substrate includes a base plate, a block having an extending arm structure and being attached to the base plate so as to be movable along the surface of the base plate, a roller attached to a tip portion of the arm structure in a direction perpendicular to the base plate, a mobile member attached to the arm structure so as to be movable perpendicularly to the axial direction of the roller, a tape-running device attached to the base plate for feeding and taking up a polishing tape through the roller so as to advance the tape around the mobile member, and a moving device attached to the arm structure of the block for moving the mobile member.

Abstract: Apparatus and methods are disclosed that promote greater polishing uniformity in linear CMP systems by introducing a relative lateral motion between a CMP belt and a rotating polish head securing a wafer. A belt polish module comprises a linear CMP belt forming a loop around an idle roller and a drive roller, first and second pistons engaging, respectively, first and second ends of the idle roller, and a controller configured to vary the forces applied by the first and second pistons to the ends of the idle roller in order to laterally translate the linear CMP belt. A method for linear CMP comprises rotating a wafer about a vertical axis, contacting the rotating wafer against a linear CMP belt moving in a longitudinal direction, and causing a relative lateral motion between the rotating wafer and the linear CMP belt.

Abstract: A liquid dispense manifold having drip nozzles configured to form controlled droplets is provided for use in chemical-mechanical polisher (CMP) systems. The liquid dispense manifold includes a plurality of drip nozzles that are secured to the side of the liquid dispense manifold. Each of the plurality of drip nozzles has a passage defined between a first end and a second end. A bend is defined within the drip nozzle passage such that droplets are directed downward toward a polishing surface. The nozzles are configured with respect to the manifold to provide an even flow rate of substantially uniform drops onto the polishing surface.

Abstract: An abrasive tape is supplied to a tape head by a tape supply unit and taken up from the tape head by a tape take-up unit. The tape head presses the abrasive tape against a surface of an object under polish, which is rotated by a rotating unit. A tape head pressuring unit utilizes a voice coil motor, for example. Since the tape head pressuring unit generates a pressuring force for pressuring the tape head using the electromagnetic force, it is able to set a minute pressuring force by controlling a drive signal, and to obtain the fine adjustment of the pressuring force easily by controlling the electric signal. Therefore, it becomes possible to press the abrasive tape against the surface of the object under polish with a desired low pressure.

Abstract: A polishing system such as a chemical mechanical belt polisher includes a hydrostatic fluid bearing that supports polishing pads and incorporates one or more of the following novel aspects. One aspect uses compliant surfaces surrounding fluid inlets in an array of inlets to extend areas of elevated support pressure around the inlets. Another aspect modulates or reverses fluid flow in the bearing to reduce deviations in the time averaged support pressure and to induce vibrations in the polishing pads to improve polishing performance. Another aspect provides a hydrostatic bearing with a cavity having a lateral extent greater than that of an object being polished. The depth and bottom contour of cavity can be adjusted to provide nearly uniform support pressure across an area that is surrounded by a retaining ring support. Changing fluid pressure to the retaining ring support adjusts the fluid film thickness of the bearing.

Abstract: A polishing apparatus is used for polishing a workpiece such as a semiconductor wafer to a flat mirror finish, and allows a polishing pad to be automatically replaced without stopping rotary or circulatory motion of a polishing table. The polishing apparatus comprises a polishing table for making rotary or circulatory motion, a top ring vertically movably disposed above the polishing table for removably holding a workpiece to be polished, a pair of rolls rotatable about their own axes and movable in unison with the polishing table, and a polishing pad which is wound on one of the rolls and supplied over an upper surface of the polishing table toward the other of the rolls.

Abstract: A linear chemical mechanical polishing apparatus that is equipped with a programmable pneumatic support platen and a method for controlling the polishing profile on a wafer surface during a linear CMP process are disclosed. The programmable pneumatic support platen is positioned juxtaposed to a bottom surface of a continuous belt for the linear CMP apparatus and positioned corresponding to a position of the wafer carrier so as to force the polishing pad against the wafer surface to be polished. The support platen has a predetermined thickness, a plurality of apertures through the thickness and a plurality of openings in a top surface in fluid communication with a gas source through the plurality of apertures.

Abstract: A chemical mechanical polishing apparatus has a substrate holder, a polishing belt, and a backing member positioned on a side of the polishing belt opposite the substrate holder. The polishing belt has a polishing surface to contact at least a portion of the substrate held by the substrate holder. The polishing belt is movable in a first direction in a generally linear path relative to the substrate. The polishing belt has a plurality of grooves formed therein.

Abstract: A platen is disclosed. The platen includes a support surface for supporting a portion of a linear polishing belt during a chemical mechanical polishing (CMP) operation. The platen also includes a plurality of fluid outlets oriented throughout the support surface. The orientation defines an asymmetric pattern where each of the plurality of fluid outlets is capable of outputting a controlled fluid toward an underside of the linear polishing belt.

Abstract: A process for planarizing, polishing, or providing other modification of a wafer surface or other workpiece. The process includes using an abrasive article having a textured abrasive coating affixed to a backing. The abrasive article includes a monitoring element, such as a window, to allow transmission of radiation therethrough. The radiation level is monitored throughout the planarization process to determine the approach of the desired endpoint. The window in the abrasive coating can be an area devoid of abrasive coating or having minimal or a thinned abrasive coating.

Abstract: A method for manufacturing a disk-like glass substrate that is used as an information recording medium. The glass substrate is acid resistant. When an index of acid resistance is the maximum depth at which components other than silica dissolve from the glass substrate during immersion of the glass substrate in 1 percentage of weight of sulfuric acid, the acid resistance of the glass substrate is represented by the maximum depth of 0.5 nm to 10 nm. A linear texture is formed by pressing a tape against the glass substrate in a circumferential direction of the glass substrate while feeding abrasion slurry to the surface of the glass substrate. Acid treatment is performed on the glass substrate on which the texture is formed.

Abstract: A method for cleaning a magnetic head using a cleaning tape comprising a substrate and a cleaning layer, wherein the cleaning tape has a stiffness of 2 or less in a width direction, and the magnetic head has trenches substantially parallel to a sliding direction of the cleaning tape.

Abstract: An air platen assembly is described and includes a platen that has a plurality of concentric rings. Each of the rings has a plurality of openings in order to provide a cushion of air to a CMP belt. At least one of the rings extends beyond an outer edge of a wafer to be planarized by the CMP belt. A support is attached with the platen and has a plurality of air ports for pressurized air to pass to the rings of the platen. A gasket is positioned between the support and the platen and has a plurality of cutouts that align with the openings and the air ports. A base is also included and supports the support.

Abstract: A polishing head assembly for retaining an object that is subject to polishing with a polishing pad is disclosed. The polishing head assembly comprises a head retainer assembly movably coupled to a wafer carrier head. The head retainer assembly includes a gimbal post and a load suspension plate. The gimbal post and the load suspension plate are operable to transfer a loading force to the wafer carrier head during polishing. The gimbal post also provides gimballing to optimize the position of the object in parallel with the polishing pad. In addition, the load suspension plate provides distribution of the loading force to optimize the flatness of the object during polishing.

Abstract: An apparatus for chemically mechanically planarizing a semiconductor wafer is disclosed having a continuous polishing strip with first side having a fixed abrasive surface and a second side opposite the first side. In one embodiment, a first drive roller holds a first end of the polishing strip, a second drive roller holds a second end of the polishing strip, and a pair of support rollers contacts the second side of the polishing strip on either end of a polishing strip support. A drive motor is operably connected to the first and second drive rollers for moving the polishing strip in a linear, bi-directional manner.

Abstract: An endless belt for a belt type polishing machine comprises a support fabric and a polymer layer of relatively low hardness. The polymer layer is formed with drainage grooves. The support fabric may comprise a non woven or woven material, or a membrane with oriented reinforcing yarns. A further version comprises a spiral-link fabric supporting a woven or non woven layer carrying the polymer layer. The polymer layer may be a double layer, the upper of which is either harder or softer than the lower layer.

Abstract: A polishing head for polishing the end surface of a semiconductor wafer has a driver roller, a driving motor for rotating it, a pair of upper and lower follower rollers one above the other parallel to and horizontally separated from the driver roller and an endless polishing belt around these rollers. As the driving motor causes the polishing belt to run around the rollers, the semiconductor wafer is pushed against the polishing belt between the upper and lower follower rollers. A pair of upper and lower tension-controlling rollers are provided for controlling the tension in the polishing belt between the two follower rollers. At least one of these tension-controlling rollers is movable vertically. A polisher is formed with such a polishing head, a holder for holding and rotating the wafer and an attaching device for attaching the polishing head to the polisher.

Abstract: A platen for use in chemical mechanical planarization (CMP) systems is disclosed. The platen is arranged below a linear polishing pad and designed to apply a controlled fluid flow to the underside of the linear polishing pad. The platen includes a leading zone containing a first plurality of output holes. The leading zone is oriented more proximate to an upstream region of the linear polishing pad. The platen also includes a trailing zone containing a second plurality of output holes. The trailing zone is oriented more proximate to a downstream region of the linear polishing pad. The leading zone and the trailing zone are independently controlled and designed to output the controlled fluid flow independently from each of the first plurality of output holes and the second plurality of output holes.

Abstract: An apparatus for smoothing a surface of a rotatably supported substrate includes a base plate, a block having an extending arm structure and being attached to the base plate so as to be movable along the surface of the base plate, a roller attached to a tip portion of the arm structure in a direction perpendicular to the base plate, a mobile member attached to the arm structure so as to be movable perpendicularly to the axial direction of the roller, a tape-running device attached to the base plate for feeding and taking up a polishing tape through the roller so as to advance the tape around the mobile member, and a moving device attached to the arm structure of the block for moving the mobile member.

Abstract: An apparatus for applying a wafer to a polishing belt during a CMP operation includes a spindle having an upper end and a lower end. A wafer carrier is coupled to the lower end of the spindle. A linear force generator is disposed at the upper end of the spindle. A load cell is positioned between the linear force generator and the upper end of the spindle. A controller is coupled to the load cell for controlling the force applied by the linear force generator. A method for applying downward force on a wafer during CMP also is described.

Abstract: An apparatus for improving performance of a wafer polishing apparatus is described. The apparatus includes a platen in a support assembly having a plurality of fluid channels and at least one region of altered topography positioned on a portion of the platen surface.

Abstract: The problem of non-uniform polishing properties of a circumferential surface area of a substrate, so-called edge sagging phenomenon, is solved. When a thin film formed on a top surface of the substrate is polished while holding a back surface of the substrate, local stress at a circumferential end of the substrate is reduced by a guide installed so as to surround the substrate. Also, a deformation of the outer circumferential end portion of the substrate is reduced by a recessed groove provided on the guide. Since a thin film formed on the surface can be polished to be flat throughout the surface of the substrate without an occurrence of non-uniform polishing properties of the outer circumferential surface area of the substrate, so-called edge sagging phenomenon, a high-performance semiconductor device can be manufactured at a high yield and low costs.

Abstract: Generally, a method and apparatus for cleaning a backside of a web of polishing material. In one embodiment, the apparatus includes a platen having a support surface adapted to support the backside the web and a web cleaner disposed on the platen and adjacent the backside of the web. A method for cleaning a web of polishing material is also provided. In one embodiment, the method includes the steps of supporting a portion of the web of polishing media on a platen, advancing a portion of the web onto the platen, and cleaning the unrolled portion of the web.

Abstract: A method and apparatus for planarizing a microelectronic substrate. The apparatus can include a planarizing medium having a relatively hard polishing pad and a planarizing liquid disposed on a generally non-porous planarizing surface of the polishing pad. The planarizing liquid can include a colloidal suspension of colloidal particles having generally smooth external surfaces. The colloidal particles can have a variety of shapes, including a spherical shape, a cylindrical shape, a cubic shape, and a hexagonal shape, among others. The colloidal particles can be formed from a variety of materials, including silicon dioxide, manganese oxide, and cerium oxide.

Abstract: An optical window structure is disclosed. The optical window structure includes a support layer that has a reinforcement layer and a cushioning layer. In addition, the optical windows structure has a polishing pad which is attached to a top surface of the support layer. Furthermore, the optical window structure has an optical window opening and a shaped optical window. The shaped optical window at least partially protrudes into the optical window opening in the support layer and the polishing pad during operation.

Abstract: The wafer edge processing unit may be a stand alone unit or may be incorporated in existing grinding machines. The processing unit employs a plurality of tapes which are coated with differing grades of grit to sequentially polish the edge of a rotating wafer or to remove an edge bead from a processed wafer or the other substrate. The tapes are mounted on a backing block which is rotated to move the tapes from a line contact with the top bevel of the wafer to a line contact with the bottom bevel of the wafer. Fresh surfaces of the tapes are presented to successive wafers by rotating the spools on which the tapes are mounted. The wafer may be moved in small increments along a Y-axis and/or an X-axis relative to a tape during polishing to improve the polishing operation.

Abstract: A polishing apparatus is used for polishing a workpiece such as a semiconductor wafer to a flat mirror finish, and allows a polishing pad to be automatically replaced without stopping rotary or circulatory motion of a polishing table. The polishing apparatus comprises a polishing table for making rotary or circulatory motion, a top ring vertically movably disposed above the polishing table for removably holding a workpiece to be polished, a pair of rolls rotatable about their own axes and movable in unison with the polishing table, and a polishing pad which is wound on one of the rolls and supplied over an upper surface of the polishing table toward the other of the rolls.

Abstract: An apparatus for simultaneously polishing wafers including at least a first and a second web of polishing media. At least two polishing heads are provided on a carrier coupled to a drive system such that one polishing head positions a wafer against the first web and a second polishing head positions a second wafer against the second web. The drive system imparts a programmed polishing motion or pattern to the polishing heads.

Abstract: In a linear chemical mechanical planarization (CMP) system, a surface of each roller of a pair of rollers is disclosed which includes a first set of grooves covering a first portion of the surface of the roller where the first set of grooves has a first pitch that angles outwardly toward a first outer edge of the roller. The surface also includes a second set of grooves covering a second portion of the surface of the roller where the second set of grooves has a second pitch that angles outwardly toward a second outer edge of the roller with the second pitch angling away from the first pitch. The surface further includes a first set of lateral channels arranged along the first portion, and a second set of lateral channels arranged along the second portion. The first set of lateral channels crosses the first set of grooves, and the second set of lateral channels crosses the second set of grooves.

Abstract: A polishing tool includes a polish pad, a bladder, a fluid, and a flux guide. A bladder containing fluid supports the polishing pad that is positioned adjacent to a surface to be polished. Flux guides positioned along a portion of the bladder direct a field or a magnetic flux to selected locations of the bladder. The method of polishing a surface adjusts the field or the magnetic flux emanating from the flux guides which changes the mechanical properties of the fluid. By adjusting the magnitude of the field or level of magnetic flux flowing from the flux guides independent pressure adjustments occur at selected locations of the bladder that control the polishing profile of the surface.

Abstract: In a linear chemical mechanical planarization (CMP) system, a surface of each roller of a pair of rollers is disclosed which includes a first set of grooves covering a first portion of the surface of the roller where the first set of grooves has a first pitch that angles outwardly toward a first outer edge of the roller. The surface also includes a second set of grooves covering a second portion of the surface of the roller where the second set of grooves has a second pitch that angles outwardly toward a second outer edge of the roller with the second pitch angling away from the first pitch. The surface further includes a first set of lateral channels arranged along the first portion, and a second set of lateral channels arranged along the second portion. The first set of lateral channels crosses the first set of grooves, and the second set of lateral channels crosses the second set of grooves.

Abstract: A method of superfinishing the cylindrical surface of a part which is intended to be mounted in circular guides and to be moved in translation along its axis relative to the guides places an abrasive applicator wheel so that its axis is perpendicular to the axis of the part and its lateral surface is pressed against the cylindrical surface. The wheel is driven in rotation about its axis and the part and/or the wheel is driven simultaneously by movement in translation along the axis of the part and rotation about the axis at speeds such that the whole of the cylindrical surface is abrasively machined longitudinally along a helical trace whose successive turns overlap. Applications include steering racks for automobiles, for example.

Abstract: Machine for machining using abrasive belts circular workpieces supported by at least one pair of parallel rollers. To pass the workpieces under the machining station(s) 6, the support rollers 16 driven in rotation are moved in translation parallel to their axes. The rollers 16 are preferably mounted on a table 13 mobile in translation which can also carry means 19 for positioning the workpieces to be machined.

Abstract: A method for monitoring consumable performance in a processing tool comprises storing a performance model of the processing tool; receiving a consumable item characteristic of a consumable item in the processing tool; determining a predicted processing rate for the processing tool based on the consumable item characteristic and the performance model; determining an actual processing rate of the processing tool; and determining a replacement interval for the consumable item based on at least the actual processing rate. A processing system includes a processing tool and an automatic process controller. The processing tool is adapted to process wafers and includes a consumable item.

Abstract: A linear chemical mechanical polishing apparatus equipped with a brush means and a solvent spray means for cleaning the polishing pad during a chemical mechanical polishing process is described. The brush means may be provided in a cylindrical, tubular shape equipped with bristle for cleaning the surface grooves on the polishing pad and thus, removing large contaminating particles to prevent the particles from scratching the wafer surface. The solvent spray means is used to spray a jet of solvent such as deionized water onto the brush means and the polishing pad for removing debris generated by the polishing process and the cleaning process.

Abstract: Generally, a method and system for lifting a web of polishing material is provided. In one embodiment, the system includes a platen that has a first lift member disposed adjacent to a first side and a second lift member disposed adjacent to a second side. The platen is adapted to support the web of polishing media that is disposed between the first and the second lift members. A method includes supporting a web of polishing media on a platen between a first lift member and a second lift member and moving at least the first lift member or the second lift member to an extended position relative the platen that places the web in a spaced-apart relation with the platen.

Abstract: An endless belt for a belt type polishing machine comprises a support fabric and a polymer layer of relatively low hardness. The polymer layer is formed with drainage grooves. The support fabric may comprise a non woven or woven material, or a membrane with oriented reinforcing yarns. A further version comprises a spiral-link fabric supporting a woven or non woven layer carrying the polymer layer. The polymer layer may be a double layer, the upper of which is either harder or softer than the lower layer.

Abstract: A method and apparatus for planarizing a microelectronic substrate. In one embodiment, the apparatus can include an elongated polishing pad that is moved over a platen either between or during the planarization cycles, and a support pad that is moved along with the polishing pad. The support pad can be an elongated member that extends between a supply roller and a take-up roller, or can include a continuous member that extends around the spaced apart rollers. The platen can also be movable along with the support pad and can be supported by fluid jets, rollers, or a rotating bladder. Cleaning devices and/or milling devices can treat the surfaces of the polishing pad, the support pad and/or the platen to reduce the likelihood for contaminants to become caught between these components as they engage with each other.

Abstract: A polishing apparatus has a feed reel for feeding a polishing tape wound thereon and having a polishing surface, a take-up reel for reeling up the polishing tape from the feed reel, a presser for pressing the polishing tape between the feed reel and the take-up reel against a surface, to be polished, of a workpiece, and a motor for rotating the take-up reel. The feed reel, the take-up reel, and the presser are housed in a cartridge, which is detachably held by a cartridge holder.

Abstract: Generally, a method and apparatus for polishing a substrate is provided. In one embodiment, an apparatus for polishing a substrate includes a polishing material having a fluid disposed thereon. The polishing material has a plurality of elements extending from a backing. The fluid that fills the entire volume between the elements comprising the polishing material has a viscosity between about 100 to about 10,000 centipoises. The fluid allows generation of a hydrostatic force that ensures the full and completed envelopment of fluid surrounding the fixed abrasive elements when polishing, thus substantially reducing the deformation of the elements, resulting in extended polishing material life.

Abstract: Planarizing machines and methods for endpointing or otherwise controlling mechanical and/or chemical-mechanical planarization of microelectronic-device substrates. In one embodiment of the invention, a method for planarizing a microelectronic substrate assembly includes removing material from the substrate assembly during a planarizing cycle by contacting the substrate assembly with a planarizing medium and moving the substrate assembly and/or the planarizing medium relative to each other. The method can also include controlling the planarizing cycle by predicting a thickness of an outer film over a first region on the substrate assembly and providing an estimate of an erosion rate ratio between the first region and a second region.