Abstract: Finishing a seal assembly as a unit is proposed, which prevents alignment of the end gaps of the annular body and the annular ring of the seal assembly, provides the ability to manufacture the seal assembly to very low tolerances, and establishes virtually perfect parallelism between the upper and lower surfaces of the seal assembly. A finishing process is characterized by lapping a seal assembly as an assembled unit with a lapper using gritted oil as a polishing medium.

Abstract: The lapping of a slider is controlled based on an amplitude of a readback signal which is produced from an externally applied magnetic field. A lapping plate is used to lap a slider which includes at least one magnetic head having a read sensor. During the lapping, a coil produces a magnetic field around the slider and processing circuitry monitors both a readback signal amplitude and a resistance of the read sensor. The lapping of the slider is terminated based on the monitoring both the readback signal amplitude and the resistance. Preferably, the lapping of the slider is terminated when the resistance is within a predetermined resistance range and the readback signal amplitude is above a predetermined minimum amplitude threshold or reaches its peak value. Asymmetry can also be measured in the described system, where the lapping process is terminated based on asymmetry as well as resistance and amplitude measurements.

Abstract: In accordance with the present invention, a method for manufacturing tungsten carbide components is provided. The method includes forming a composite material out of tungsten carbide powder and binder powder, pressing the composite material into a plurality of components, heating the plurality of components, optionally under pressure, to liquefy the binder, cooling the plurality of components until the binder solidifies, optionally grinding each of the plurality of components to a desired size, and cascading the plurality of components in a cascading machine under high energy conditions.

Abstract: A variety of techniques may be employed, alone or in combination, to enhance contact between a processed substrate and applied megasonic energy. In accordance with one embodiment of the new invention, the vibration plate is brought into intimate contact with one surface of the substrate, while cleaning or processing fluid contacts the other. In accordance with an alternative embodiment of the present invention, a reflecting surface may be provided to cause emanated energy to be reflected back into the near field and make it more uniform. In accordance with another alternative embodiment of the present invention, energy may be transferred across a substrate bounded on both sides by liquid with incidence of megasonic energy that is either normal to the substrate surface or within a critical range of incident angles. In yet another embodiment, generated dilatational waves may be converted to surface waves prior to contacting the substrate.

Abstract: A surface finishing method for aluminum shapes by barrel polishing, wherein caps are mounted at both open ends of a hollow aluminum shape, and two aluminum shapes each mounted with the caps are set on two right and left holders so as not to interfere with each other, the two aluminum shapes held above and below by the two right and left holders are next put in a barrel pot, and water, a compound, and a medium are put in the barrel pot, and then the barrel pot is closed by a lid. A plurality of barrel pots are installed on a centrifugal barreling machine, and the centrifugal barreling machine is operated so that the aluminum shapes are rotated and revolved.

Abstract: A substrate is chemical mechanical polished with a high-selectivity slurry until the stop layer is at least partially exposed, and then the substrate is polished with a low-selectivity slurry until the stop layer is completely exposed.

Abstract: A chemical/mechanical polishing method for polishing an object to be polished with an irregular surface, having a substrate with convexities and concavities, a stopper layer formed on the convexities of the substrate, and an embedded insulating layer formed to cover the concavities of the substrate and the stopper layer, wherein the method is characterized comprising a first polishing step of flattening the embedded insulating layer using a slurry (A) which can maintain the polishing speed at 500 ?/min or less and a second polishing step of further polishing the embedded insulating layer to cause the stopper layer on the convexities to be exposed using a slurry (B) which can maintain the polishing speed at 600 ?/min or more. The method is useful for flattening wafers during shallow trench isolation (STI) in manufacturing semiconductor devices.

Abstract: The invention is about reducing friction and wear and risk of seizure of mechanically interacting lubricated surfaces. A working surface of a mechanical piece engaged with another piece in relative sliding movement is processed for reduced friction. Two distinctly separate zones are allocated on the surface, one attractive to a lubricant used and the other repelling to the lubricant. The repellency may be conveyed to the repelling zone by either a mechanical modifying process or by a chemical change. In a preferred embodiment of the invention the repellency is obtained by lapping. The lubricant attractive layers are associated in a preferred embodiment of the invention with an assembly of recessed microstructures.

Abstract: A method for polishing a silicon carbide crystal substrate according to the present invention includes a polishing process of polishing a silicon carbide crystal substrate having a surface roughness Rz of at most 50 ?m, using an abrasive solution containing abrasive particles made of boron carbide. Accordingly, it is possible, by using boron carbide as abrasive particles instead of conventionally used diamond, to reduce the damage caused to silicon carbide crystals, which constitute the material to be polished, and to the surface of the polishing surface plate, and to perform surface polishing precisely.

Abstract: A method for manufacturing an article where the article has polymeric residue that is to be removed during the manufacture of the article. The article is introduced into a controlled environment of a processing tool that has at least first and second processing chambers. Free radicals are generated from one or more reactant gases and introduced into at least the first processing chamber where they react with the polymeric residue. A cryogenic cleaning medium is supplied into the second processing chamber where it removes the polymeric residue present after the free radicals react with the polymeric residue. The reactant gases are selected to facilitate removal of the polymeric residue with the cryogenic cleaning medium The first and second processing chambers may be dedicated to plasma processing or cryogenic processing or each may provide both plasma processing and cryogenic processing.

Abstract: A process for treating surfaces of rare earth metal-based permanent magnets, comprising removing an oxide layer formed on a surface of each of the permanent magnets using a blasting apparatus. The apparatus comprises a tubular barrel formed of a mesh net for accommodation of work pieces and supported circumferentially outside a center axis of a support member rotatable about the center axis, and an injection nozzle disposed to inject a blast material against the work pieces from the outside of the tubular barrel, wherein at least one of the tubular barrel and the support member is detachably mounted. The process further comprises removing the tubular barrel or the support member from the blasting apparatus and attaching the tubular barrel or the support member to a vapor deposited film forming apparatus, where a metal film is formed on the surface of each of the permanent magnets by a vapor deposition process.

Abstract: A method for manufacturing an article having polymeric residue that is to be removed during the manufacture of the article is disclosed. The article is introduced into a controlled environment of a processing tool having one or more processing chambers. Free radicals are generated from one or more reactant gases and introduced into at least one of the one or more processing chambers where they react with the polymeric residue. A cryogenic cleaning medium is supplied into at least one of the one or more processing chambers where it removes the polymeric residue present after the free radicals react with the polymeric residue. The reactant gases are selected to facilitate removal of the polymeric residue with the cryogenic cleaning medium. The cryogenic cleaning medium is supplied via a nozzle implement that sweeps across the article. A slide mechanism and drive motor may be supplied internal or external to the controlled environment.

Abstract: Techniques for singulating a substrate into a plurality of component parts is disclosed. The singulation techniques include generating a jet stream in order to cut through large components so as to produce smaller components. The techniques are particularly suitable for singulating surface mount devices such as chip scale packages, ball grid arrays (BGA), flip chips, lead less packages (QFN) and the like. The techniques are also suitable for singulating photonic devices.

Abstract: The described embodiments relate to methods and systems of forming slots in a substrate. One exemplary embodiment forms a feature into a substrate having a first substrate surface and a second substrate surface, and moves a sand drill nozzle along the substrate to remove substrate material sufficient to form, in combination with said forming, a slot through the substrate.

Abstract: A pipe renovating method and system in which a pipe is first cleaned and then coated with a suitable coating material. In the cleaning step, pressurized air and particles of abrasive material are pumped into a first end of a pipe while suction is applied to the second end of the pipe via a vacuum pump to improve flow along the entire length of the pipe. The coating material is subsequently pumped in at one end of the cleaned pipe while suction is applied at the other end. In each step, the suction flow rate is higher than the input flow rate, so as to steer the mixture towards the second end. This method can be used to coat and clean different sections of a pipe system, by connecting the input materials successively to different access ports in the system.

Abstract: In a first polishing step, or in a first half of a super precision polishing, a surface of a glass substrate is polished with a first suspension. The first suspension contains particles and a dispersion agent in which the particles are dispersed. The main ingredient of the particles is silicon dioxide (SiO2), and the average size (D50) of the particles is equal to or less than 100 nm. The dispersion medium comprises an acid solution the pH of which is equal to or less than 4. In a second polishing step, or in a latter half of the super precision polishing, the surface of the glass substrate is continuously polished with a second suspension. The second suspension contains particles and a dispersion agent in which the particles are dispersed. The main ingredient of the particles is silicon dioxide (SiO2), and the average size (D50) of the particles is equal to or less than 100 nm. The dispersion medium comprises an alkaline solution the pH of which is equal to or more than 8.5.

Abstract: The invention provides a chemical-mechanical polishing system and method comprising a liquid carrier, a polishing pad and/or an abrasive, and at least one amine-containing polymer, wherein the amine-containing polymer has about 5 or more sequential atoms separating the nitrogen atoms of the amino functional groups or is a block copolymer with at least one polymer block comprising one or more amine functional groups and at least one polymer block not comprising any amine functional groups.

Abstract: A method for milling grooves in a work-piece includes using a manipulator to control impingement angles of abrasive fluidjets traversed across the work-piece. Another method employs multiple fluidjets simultaneously with a plurality of impingement angles. An apparatus is also provided to allow for the simultaneous use of multiple abrasive fluidjets with a plurality of impingement angles.

Abstract: To reduce the wafer production cost by grinding a sliced semiconductor wafer at a high accuracy and a high efficiency and supplying the wafer to the next polishing step. A semiconductor wafer is rough ground between grindstones by a fixed grindstone. After rough grinding, finish grinding by free abrasive grain is performed on the same grinding axis by supplying a slurry which suspends fine abrasive grain between the grindstones through slurry pipes. To perform finish grinding by free abrasive grains, a rotational speed and a feed rate of the grindstones are lowered to lower the grinding action by a fixed grindstone.

Abstract: A new technical advancement in the field of precision aluminum optics permits high quality optical polishing of aluminum monolith, which, in the field of optics, offers numerous benefits because of its machinability, lightweight, and low cost. This invention combines diamond turning and conventional polishing along with india ink, a newly adopted material, for the polishing to accomplish a significant improvement in surface precision of aluminum monolith for optical purposes. This invention guarantees the precise optical polishing of typical bare aluminum monolith to surface roughness of less than about 30 angstroms rms and preferably about 5 angstroms rms while maintaining a surface figure accuracy in terms of surface figure error of not more than one-fifteenth of wave peak-to-valley.

Abstract: Provided is a novel high selectivity aqueous slurry composition method of utilizing same. The composition includes non-modified silica based abrasive particles in an amount of about 5 to about 50 weight percent, and an organic compound in an amount of about 0.001 to about 2.0 weight percent in an aqueous solution, wherein the silicon oxide to silicon nitride selectivity ratio ranges from about 50 to about 700.

Abstract: A method of slider machining is disclosed. A slider may be diced out of a row bar. A jet of clean air may dry the slider. A laser, guided by a jet of water, may micro-grind the periphery of the slider. The edges of the slider and the corners of the leading edge may be rounded to a pre-determined radius. The slider may be cleaned with de-ionized water, then dried in a hot oven.

Abstract: Beginning with a smooth ground aluminum blank with a relatively thin layer of leveled Ni—P, circumferential electropolishing/texturing is carried out to achieve a smooth oriented surface. A conductive slurry is provided between the disc and a porous texturing tape which is in contact with a conducting plate or equivalent conductor. The disc serves as the anode, and the conducting plate as the cathode, while the slurry, being conductive, functions as an electrolyte. In the presence of current, a reverse electroplating occurs so that the Ni—P dissolves to form Ni2+, or nickel ions which are carried away by the conductive slurry. The conductive slurry further supports or carries therein abrasive material so that by moving the porous texturing tape past the disc surface, the texturing tape picks up the abrasive material in the slurry and simultaneously with the reverse electroplating, provides the desired mechanical abrasion to achieve texturing of the disc surface.

Abstract: AlxGayInzN, wherein 0?x?1, 0?y?1, 0?z?1, and x+y+z=1, characterized by a root mean square surface roughness of less than 1 nm in a 10×10 ?m2 area. The AlxGayInzN may be in the form of a wafer, which is chemically mechanically polished (CMP) using a CMP slurry comprising abrasive particles, such as silica or alumina, and an acid or a base. High quality AlxGayInzN wafers can be fabricated by steps including lapping, mechanical polishing, and reducing internal stress of said wafer by thermal annealing or chemical etching for further enhancement of its surface quality. CMP processing may be usefully employed to highlight crystal defects of an AlxGayInzN wafer.

Abstract: A method is disclosed for constructing non-seamed stone corners for use on outside edges formed by joining thin stone walls at right angles. Thin stone is used to lay the field of the walls. Then a building stone is oriented and fed down a chute, having perpendicular sides, through two stone cutting saws at right angles to one another, where the distance between the saw blades and the sides of the chute correspond to the thickness of the respective thin stone walls, and where the cutting edges of the saw blades have a clearance between them of about one-eighth of an inch. A residual piece is removed from the cut building stone, leaving a corner stone. These corner stones are laid on the corner formed by the right angle joint between the walls, giving the illusion of a thick building stone wall with nearly the low cost and easy laying of thin stone. Where the residual piece is large enough, it is used to cut a second corner stone in the same manner.

Abstract: A porous polishing pad for use chemical/mechanical planarization of semiconductor wafers is provided with a transparent section formed in a section of the porous polishing pad by direct injection of a polymeric material into a modified portion of the pad. The modified section may be either a low density area, or may be created by removing a complete vertical section of the pad. The injected polymer forms an integral window with the pad by flowing into the matrix of the pad at the pad/window interface. No additional reinforcement is required to hold the window in place; however, adhesive and/or another impervious layer may be attached behind the window for additional support. In an alternative embodiment, a separate and distinct window-plug is inserted into a cutout section of the pad, and bonded to the pad by one or more binding film layers on the back, non-working surface of the pad.

Abstract: A disc repair system which is provided for the purpose of consumer-repairing of scratches on optically-read discs (e.g., digitally recorded discs, known commonly, as “CD” discs or “DVD” discs, etc., containing audio or video or other formats of data information), such that an optical reader, which uses a laser to read digital information stored on a compact disc, can read the digital information without the optical distortion caused by a scratch. The system utilizes diamond grit as an abrading compound to recondition the disc surface.

Abstract: An abrading plate has a self-stopping capability such that when an object, such as a semiconductor wafer having a device structure that includes raised regions and depressed regions fabricated on the surface, is being polished, the raised regions are removed and polishing stops automatically. The abrading plate, to produce a flat and mirror polished surface on the an object, has abrasive particles having a chemical purity of not less than 90% and a particle size of not more than two micrometers, a binder material, and a given volume of porosity. A ratio of the abrasive particles and the binder material is not less than 1:0.5 by volume, and proportions of abrasive particles, a binder material and porosity are, respectively, not less than 10%, not more than 60% and 10-40% by volume. A surface is polished for a given duration with a liquid not containing abrasive particles so as to eliminate the raised regions and to obtain a flat surface.

Abstract: A method for enhancing uniformity in the polishing profile of a substrate during chemical mechanical polishing. According to a first embodiment, the method is adapted for a rotary-type chemical mechanical polisher and includes dispensing the polishing slurry onto the rotating polishing pad of the CMP apparatus in a polishing area on the polishing pad that contacts the entire surface area of the substrate. This facilitates substantially equal polishing rates and a substantially uniform polishing profile from the center to the edge regions on the surface of the substrate. According to a second embodiment, the method of the present invention is adapted for a linear-type chemical mechanical polisher and includes increasing the number of nozzles that dispense the slurry onto the polishing pad across the diameter or width of the substrate.

Abstract: A computer-controlled slurry supplying apparatus for providing abrasive slurry to a chemical mechanical polishing (CMP) machine in a semiconductor manufacturing process preferably comprises a storage portion for accepting and storing a quantity of undiluted slurry, a mixing portion for accepting undiluted slurry from the storage portion and mixing with a diluting solution to created a diluted slurry, a supply portion for holding the diluted slurry, and at least one point-of-use mixing unit for mixing at least one chemical additive to the diluted slurry at or near a dispensing nozzle at the point of application. Each of the above portions of the slurry supplying apparatus further includes a re-circulation means for keep solutions in a mixed and agitated state. A method for using the slurry supplying apparatus comprises steps of controllably operating various valves, pumps, and sensors to maintain a desired slurry composition and flow rate.

Abstract: Finishing a seal assembly as a unit is proposed, which prevents alignment of the end gaps of the annular body and the annular ring of the seal assembly, provides the ability to manufacture the seal assembly to very low tolerances, and establishes virtually perfect parallelism between the upper and lower surfaces of the seal assembly. A finishing process is characterized by lapping a seal assembly as an assembled unit with a lapper using gritted oil as a polishing medium.

Abstract: A method for grinding lens is provided in the invention. First, a lens which has an optical surface and a surface-to-be-grinded is placed on a polishing pad. Next, cover up the lens with a fluid guiding tube wherein the fluid guiding tube has a fluid inlet and a fluid outlet with the fluid outlet being situated at the top of the polishing pad for accommodating the lens. After that, a fluid is introduced into the fluid guiding tube through the fluid inlet and is discharged from the fluid outlet, and the flow of the fluid follows the normal direction of the optical surface and applies force evenly thereon. Last, the polishing pad is moved along with the tangent line of its surface for the surface-to-be-grinded to be grinded.

Abstract: A system and method are provided that maintains a high pH at the wafer surface through the entire polish process and then lowers the pH only when necessary in a controlled fashion after CMP and during the post-polish clean. A fluid having a high pH chemistry and, optionally, surfactants is used instead of deionized water to keep the wafer and polisher components wet and to clean the slurry residue from the polishing pad.

Abstract: A porous polishing pad for use chemical/mechanical planarization of semiconductor wafers is provided with a transparent section formed in a section of the porous polishing pad by direct injection of a polymeric material into a modified portion of the pad. The modified section may be either a low density area, or may be created by removing a complete vertical section of the pad. The injected polymer forms an integral window with the pad by flowing into the matrix of the pad at the pad/window interface. No additional reinforcement is required to hold the window in place; however, adhesive and/or another impervious layer may be attached behind the window for additional support. In an alternative embodiment, a separate and distinct window-plug is inserted into a cutout section of the pad, and bonded to the pad by one or more binding film layers on the back, non-working surface of the pad.

Abstract: A substrate is chemical mechanical polished with a high-selectivity slurry until the stop layer is at least partially exposed, and then the substrate is polished with a low-selectivity slurry until the stop layer is completely exposed.

Abstract: A method is provided for processing a semiconductor topography. In an embodiment, the method includes polishing the topography on a primary polishing pad during a primary polishing step without depositing water on the primary polishing pad. The method may also include transferring the topography from the primary polishing pad to a final polishing pad. A substantial amount of residual slurry particles may be present on the topography while the topography is being transferred. In an embodiment, the method may also include polishing the topography on a final polishing pad during a final polishing step. The final polishing step may include depositing water on the final polishing pad in a plurality of dispense intervals to reduce a rate of change of a pH of a polishing solution on the topography.

Abstract: A method and apparatus of planarizing substrates is disclosed. A planarizing web medium is prepared for planarizing substrates to reduce defect generation. The planarizing web has a planarizing region and preparing region defined thereon, wherein at least one portion of the preparing region is outside the planarizing region. The web medium is advanced to move one portion of the web out of the planarizing region and another portion into the planarizing region.

Abstract: A three layer film (116/114/112), such as nitride/oxide/nitride for a CMP stop layer (110). A gap filling material (120) is polished, stopping on the first film (112). The first film (112) is then stripped using an etch chemistry that is selective against removing the second film (114). CMP is then continued stopping on the third film (116).

Abstract: An abrasive ground fabric which is a composite ground fabric comprising a fiber substrate and a elastic polymer filled in the fiber substrate, wherein (1) the fiber substrate is composed of bundles, each consisting of 20 to 3,000 fine fibers, and (2) the average diameter (D1) of fine fibers existent in a center portion from the center of the cross section perpendicular to a lengthwise direction of each bundle to ½ of the radius of each bundle is 0.3 to 10 &mgr;m, the average diameter (D2) of fine fibers existent in a peripheral portion from ½ of the radius to the end of each bundle is 0.05 to 1 &mgr;m, and the D1/D2 ratio is 1.5 or more. According to the present invention, the abrasive ground fabric is suitably used for the texturing of a substrate in the production of a magnetic recording medium, particularly a hard disk, enables high-accuracy surface finish and has excellent strength.

Abstract: A new method and sequence is provided for the polishing of the surface of a layer of metal containing copper. The invention provides for an improved method of residue removal. The invention improves the removal of slurry as part of the step of applying DIW by, during the step of applying DIW, raising the wafer carrier, thus allowing uninhibited removal of the slurry from the surface that is being polished.

Abstract: A pipe renovating method and system is described, in which a pipe is first cleaned and then coated with a suitable coating material. In the cleaning step, pressurized air and particles of abrasive material are pumped into a first end of a pipe while suction is applied to the second end of the pipe via a vacuum pump to improve flow along the entire length of the pipe. The coating material is subsequently pumped in at one end of the cleaned pipe while suction is applied at the other end.

Abstract: Methods and apparatus for chemical mechanical planarization of an article such as a semiconductor wafer use polishing slurries including a carbon dioxide solvent or a carbon dioxide-philic composition. A carbon dioxide cleaning solvent step and apparatus may also be employed.

Abstract: According to one embodiment, a method of planarizing of a surface of a semiconductor substrate is provided. A copper layer is inlaid in a dielectric layer of the substrate. The semiconductor substrate is disposed opposite to a polishing pad and relative movement provided between the pad and the substrate. An electrolytic slurry containing abrasive particles is flowed over the substrate or the pad. A voltage is applied between the polishing pad and the substrate to perform electropolishing of the substrate. The rate of chemical mechanical polishing is controlled by the down force applied to a polishing head urging the substrate against the polishing pad.

Abstract: A pipe renovating method and system is described, in which a pipe is first cleaned and then coated with a suitable coating material. In the cleaning step, pressurized air and particles of abrasive material are pumped into a first end of a pipe while suction is applied to the second end of the pipe via a vacuum pump to improve flow along the entire length of the pipe. The coating material is subsequently pumped in at one end of the cleaned pipe while suction is applied at the other end.

Abstract: A new method and sequence is provided for the polishing of the surface of a layer of metal containing copper. One of the main problems that is conventionally encountered during the polishing of a copper surface is insufficient removal of the slurry and the therein contained residue of semiconductor materials. The invention therefore provides for an improved method of residue removal. Using the conventional step of applying DIW, the contact between the polishing pad and the surface that is being polished is constant and uninterrupted during the step of applying DIW. The invention improves the removal of slurry as part of the step of applying DIW by, during the step of applying DIW, raising the wafer carrier, thus allowing uninhibited removal of the slurry from the surface that is being polished.

Abstract: The present invention provides a process for manufacturing a semiconductor wafer capable of effectively reducing unevenness having a wavelength of 0.5 mm or more which remains on a surface of the semiconductor wafer after a first polishing step and improving flatness thereof; and a semiconductor wafer manufactured by the manufacturing process. The manufacturing process comprises: plural polishing steps including a first polishing step and a final polishing step; and a corrective polishing step performed after the first polishing step using a polishing cloth harder than that used in the first polishing step.

Abstract: A method for preventing or reducing corrosion of copper containing features included in a semiconductor wafer in a chemical mechanical polishing (CMP) process including providing a semiconductor wafer polishing surface including copper filled anisotropically etched features; polishing the semiconductor wafer polishing surface according to a first CMP process including applying at least one polishing slurry to contact the semiconductor wafer polishing surface for removing an uppermost layer of the semiconductor wafer polishing surface; and, alternately applying a copper corrosion inhibitor solution for a period of time and the at least one polishing slurry for a period of time to contact the semiconductor wafer polishing surface to comprise a polishing cycle said polishing cycle performed at least once during at least a second CMP process.

Abstract: A semiconductor substrate having a Cu layer formed so as to fill wiring grooves formed in the substrate surface and to cover regions of the substrate surface where no wiring groove is formed is brought into sliding contact with a polishing surface on a turntable to carry out polishing until the Cu layer is polished to a predetermined thickness. Then, the semiconductor substrate is brought into sliding contact with a polishing surface on a turntable to carry out polishing until the Cu layer on the substrate surface is removed, except for portions of the Cu layer formed to fill the wiring grooves, and a barrier metal layer is also removed. Thus, the Cu layer on the substrate surface can be removed uniformly, and the Cu wiring portions formed in the wiring grooves can be planarly and uniformly polished without giving rise to problems of over-polishing such as dishing or erosion.

Abstract: Abrasive shot is injected into a carrier stream of compressed gas. The shot and gas stream are directed against a pliant coating. The compressed gas expands at the coating for cooling thereof which decreases coating resiliency for enhancing stripping thereof by the impinging abrasive shot.

Abstract: A method for preventing or reducing corrosion of copper containing features included in a semiconductor wafer in a chemical mechanical polishing (CMP) process including providing a semiconductor wafer polishing surface including copper filled anisotropically etched features; polishing the semiconductor wafer polishing surface according to a first CMP process including applying at least one polishing slurry to contact the semiconductor wafer polishing surface for removing an uppermost layer of the semiconductor wafer polishing surface; and, alternately applying a copper corrosion inhibitor solution for a period of time and the at least one polishing slurry for a period of time to contact the semiconductor wafer polishing surface to comprise a polishing cycle said polishing cycle performed at least once during at least a second CMP process.