Abstract: The invention relates to a device for applying and/or detaching a wafer to/from a carrier with a deformable membrane which can be aligned parallel to the contact surface of the wafer, with one contact side for at least partial contact-making with the contact surface, deformation means which are located backward to the contact side for deformation of the membrane which can be controlled in a defined manner and adhesion means for adhesion of the wafer to the membrane and process for detaching and/or applying a wafer to/from a carrier with a corresponding device.

Abstract: Embodiments of the present invention relate to apparatus and method for improve uniformity of a polishing process. Embodiments of the present invention provide a heating mechanism configured to apply thermal energy to a perimeter of a substrate during polishing, or a cooling mechanism configured to cool a central region of the substrate during polishing, or a biased heating mechanism configured to create a temperature step differential on a given radius of a polishing pad.

Abstract: An eyeglass lens processing apparatus includes: a processing chamber for processing the lens; a grinding water supply unit which includes a first switch unit for turning on/off a supply of grinding water to a first nozzle for ejecting grinding water toward a processing point of the lens; a cleaning water supply unit which includes a second switch unit for turning on/off a supply of cleaning water to a second nozzle for ejecting cleaning water for cleaning processing refuse of the lens scattered in the processing chamber. According to a selection signal indicating a material of the lens being plastic, the control unit controls the first switch unit to turn on the supply of the grinding water in whole processing processes, and controls the second switch unit to turn off the supply of the cleaning water in the whole processing processes.

Abstract: A method for operating a machining tool, comprising: setting a flow rate and a pressure of a flow of coolant to a flow rate target and a pressure target, respectively, the coolant flow being provided to the machining tool; machining a work-piece using the machining tool; measuring the flow rate and the pressure of the flow of coolant; and detecting an anomaly with respect to the coolant flow; and taking a corrective action depending on the type of the detected anomaly.

Abstract: In a wafer processing method, an ingot is sliced into a wafer and the wafer is planarized by polishing a surface of the wafer. When the wafer is planarized, the wafer is disposed on a wafer holder and the wafer is rotated, a heat quantity is applied to a portion of the wafer so as to form a reformed layer at the portion of the wafer, and a polishing tool is brought into contact with the portion of wafer while rotating so as to polish the portion of the wafer.

Abstract: A method of fabricating a whispering gallery mode resonator (WGMR) is provided. The WGMR can be fabricated from a particular material, annealed, and then polished. The WGMR can be repeatedly annealed and then polished. The repeated polishing of the WGMR can be carried out using an abrasive slurry. The abrasive slurry can have a predetermined, constant grain size. Each subsequent polishing of the WGMR can use an abrasive slurry having a grain size that is smaller than the grain size of the abrasive slurry of the previous polishing iteration.

Abstract: The present invention provides a slicing method comprising winding a wire around a plurality of grooved rollers and pressing the wire against an ingot to be sliced into wafers while supplying a slurry for slicing to the grooved rollers and causing the wire to travel, wherein a cooling speed of the ingot when a slicing depth is equal to or above ? of a diameter is controlled to perform slicing by supplying a slurry for adjusting an ingot temperature to the ingot independently from the slurry for slicing while controlling a supply temperature only in a period from the moment that the slicing depth of the ingot reaches at least ? of the diameter to end of slicing. As a result, the slicing method is provided, in which rapid cooling of the ingot in the time close to end of slicing the ingot can be alleviated when a wire saw is used to slice the ingot, and generation of a nano-topography can be thereby suppressed and further high quality wafers having a uniform thickness are obtained by slicing.

Abstract: The present invention is a wire saw in which a wire is wound around a plurality of grooved rollers, the workpiece is sliced into wafers by causing the wire to travel and pressing the workpiece against the wire while a slurry is supplied to the grooved rollers, the wire saw controlling in such a manner that the workpiece is sliced while a supply temperature of the slurry is increased from the start to the end of slicing the workpiece. As a result, there is provided a wire saw in which Warp of the workpiece to be sliced can be improved by suppressing a decrease in a temperature of the workpiece in the vicinity of the slicing end portion of the workpiece and by making an increase in displacement of the grooved roller during slicing straight, that is, by making the slicing trajectory depicted in the workpiece close to a straight line.

Abstract: The present invention is a method for resuming operation of a wire saw comprising the steps of: slicing the workpiece while measuring and recording a displacement amount in an axial direction of each of the grooved rollers and a temperature of the workpiece during the slicing of the workpiece; suspending the slicing of the workpiece; adjusting the displacement amount in an axial direction of each of the grooved rollers and the temperature of the workpiece by supplying temperature-adjusting mediums separately temperature-controlled to the grooved rollers and the workpiece so as to be equal to the displacement amount and temperature recorded upon suspending the slicing of the workpiece respectively, after the suspending, before resuming the slicing of the workpiece; and thereafter resuming the slicing.

Abstract: A method and a device for treating wafers on assembly carriers is disclosed. A wafer to be treated can be fixed on a liquid film that is located between the front side of the wafer and the assembly carrier by freezing of the film.

Abstract: A polishing head for a chemical mechanical polishing apparatus is provided which includes at least two polishing head zones configured to provide different temperatures for transferring heat to at least two zones of a substrate corresponding to the at least two polishing head zones. The present disclosure addresses chemical mechanical polishing which allows a control of the polishing profile even if slurries are used, which show almost no dependency between polishing rate and down force.

Abstract: An apparatus for thermal mechanical machining of composite materials includes a head, a drive, and a shaft. The head has an abrasive face. The drive is coupled to the apparatus to move the head to produce abrasion of the composite material by the abrasive face. The shaft includes a passageway that communicates a heated gas to an interface between the abrasive face and the composite material. The gas removes particles that result from the abrasion of the composite material by the abrasive face. The gas can be heated sufficiently to carbonize or vaporize organic constituents of the composite material.

Abstract: A tool for use in an abrasive machining process has a body extending along a central longitudinal axis from a first end to a tip end. An abrasive material is located on the tip end. The body has a tip end protuberance. An abrasive material is located on the protuberance. A body lateral surface has, over a radial span of at least 20% of a radius of the protuberance, a continuously concave longitudinal profile diverging tipward.

Abstract: An abrasive article is disclosed that is suitable for cleaning, sanding, scraping, or other such process of removing an outer layer or adherent matter. The abrasive article includes a plurality of abrasive particles at least partially embedded in a frozen liquid.

Abstract: A system and method for slicing an ingot into wafers using the wire saw process. A slurry collection system collects and supplies slurry to a slurry handling system for controlling temperatures and/or flow rates of the slurry thereby providing slurry output at a controlled temperature and/or a controlled flow rate to slicing system for cutting the ingot, which may be preheated.

Abstract: The present invention provides an apparatus for heating or cooling a polishing surface. This apparatus includes a heat exchanger arranged so as to face the polishing surface when the workpiece is polished. The heat exchanger includes a medium passage through which a heat-exchanging medium flows, and a bottom surface facing the polishing surface. At least a part of the bottom surface is inclined with an upward gradient above the polishing surface such that a polishing liquid on the polishing surface generates a lift exerted on the bottom surface during movement of the polishing surface.

Abstract: A superfinishing stone 2 is slid on a rotating subject surface 7 as pressed against the subject surface 7 and is held in contact against the subject surface 7 as vibrated thereon in a different direction from the sliding direction. The superfinishing stone includes plural stone portions 3, 4 divided by a split surface 6 inclined to both the sliding direction and the vibrating direction and mutually independently movable along the split surface 6 and in the pressing direction.

Abstract: Provided are methods and apparatuses for processing photovoltaic cell metallic substrates to remove various surface defects. In certain embodiments, a thin stainless steel foil is polished using a proposed method leading to a substantial, e.g., twice or more, increase in its surface gloss. In certain embodiments, a method in accordance with the present invention involves contacting a substrate surface with a fixed-abrasive filament roller brush. The brush may be a close-wound coil brush. The brush includes filaments carrying 5-20 micrometer abrasive particles that are permanently fixed in the brush filaments, for example a polymer base material, such as nylon. The particles may be made of silicon carbide and/or other abrasive materials. In certain embodiments, a substrate surface is polished using a series of roller brushes, at least two of which rotate in different directions with respect to that surface.

Abstract: A semiconductor process includes polishing a substrate with a slurry in an enclosure. Polishing the substrate is stopped. First mist is injected into the enclosure, such that the first mist has at least about 80% of saturation of a liquid or gaseous solvent in a carrier within the enclosure.

Abstract: A method for the simultaneous double-side grinding of a plurality of semiconductor wafers, involves a process wherein each semiconductor wafer lies such that it is freely moveable in a cutout of one of a plurality of carriers caused to rotate by means of a rolling apparatus and is thereby moved on a cycloidal trajectory, wherein the semiconductor wafers are machined in material-removing fashion between two rotating working disks, wherein each working disk comprises a working layer containing bonded abrasive. The method according to the invention makes it possible, by means of specific kinematics, to produce extremely planar semiconductor wafers.

Abstract: A flash vaporizing liquid jet cutting tool and method for piercing with minimal damage to the cut material. The liquid is preferably superheated water, typically with abrasive particles added after the jet is expressed through a nozzle (abrasive water jet, AWJ) or with abrasive particles added before the jet is expressed through a nozzle (abrasive slurry jet, ASJ). In piercing, only a portion of water that has not changed phase enters into the cavity or must leave the cavity and the piercing pressure, which can damage the material, is therefore reduced.

Abstract: The present invention provides a method for correcting a semi-conductive belt, the semi-conductive belt including a resin and a conductive substance, the method having grinding a geometrically defective part of the semi-conductive belt to flatten the geometrically defective part.

Abstract: A nozzle for spraying sublimable solid particles and preventing frost from forming at surfaces of the nozzle. The nozzle includes: a cleaning agent block for phase-changing a cleaning agent into a snow containing sublimable solid particles; a nozzle block for growing the cleaning agent snow through adiabatic expansion and spraying the grown cleaning agent snow onto a surface of an object; a carrier gas block for supplying a carrier gas to the nozzle block to mix with the cleaning agent snow; and a heater for heating at least a portion of the carrier gas supplied from the carrier gas supply source. Fine dry ice particles and liquid CO2, passing through a solenoid valve from a CO2 reservoir tank and a pressure drop of a flow rate regulation valve, are introduced into the spray nozzle and then mixed with the carrier gas, such as N2 or purified air, and discharged.

Abstract: The shaper device for shaping an ophthalmic lens comprises a blocking support on a blocking axis, a shaper tool, an electronic or computer unit for controlling the position of said shaper tool, and a man/machine interface connected to said electronic or computer unit, and comprising a display screen (253) and input means for inputting numerical values.

Abstract: The present invention relates to a method and a system for manufacturing wafer-like slices from a body of a substrate material, especially for use in the manufacture of semiconductor devices. The method comprises providing a slicing device with a cutting wire equipped on its surface with abrasive particles; providing an aqueous cooling and lubricating fluid, said fluid having an ionic strength corresponding to an electrical conductivity of about 30 ?S/cm or less; cutting said body with said cutting wire into slices while dispensing said cooling and lubricating fluid into a kerf area where said cutting wire contacts and cuts said body, said cooling and lubricating fluid promoting removal of powdered substrate material from said kerf area resulting in spent fluid; and removing said spent fluid from said cutting device and recovering said powdered substrate material from said spent fluid.

Abstract: The present invention provides a method of resurfacing a pressure member in a printer having a fuser member that is externally heated by a heater roller. The method includes providing a pressure member having an outer surface of a high temperature fluorothermoplastic. When it is determined that the outer surface is in need of resurfacing, the fuser member is removed from the printer, and the pressure member is mounted in the place of the fuser member. The pressure member is rotated at a speed of at least 1 rpm while engaging the outer surface of the fuser member with the heating roller normally used to heat the fuser member at a pressure of at least 5 psi at a temperature of at least 10° C. below the fluorothermoplastic melting temperature for a time sufficient to resurface of the outer surface of the pressure member.

Abstract: Disclosed in one embodiment is a computer numerically controlled machine having a coolant nozzle that is mounted on a turret of the machine and that is rotatable relative to the turret under the control of a computer control system. The nozzle is fluidically connected to a source of a coolant. The machine includes a computer control system that is operatively coupled to the various components of the machine including the nozzle. In some embodiments, the nozzle may be moved to cause a constant contact angle with respect to one of said tool and said workpiece. In other embodiments, the nozzle may be moved to cause a constant coolant time to interface. Also disclosed are related methods.

Abstract: A method of producing a complex shape in a workpiece includes the steps of: i) grinding a workpiece at a maximum specific cutting energy of about 10 Hp/in3·min with at least one bonded abrasive tool, thereby forming a slot in the workpiece; and ii) grinding the slot with at least one mounted point tool, thereby producing the complex shape in the slot. The bonded abrasive tool includes at least about 3 volume % of a filamentary sol-gel alpha-alumina abrasive grain having an average length-to-cross-sectional-width ratio of greater than about 4:1 or an agglomerate thereof. A method of producing a slot in a metallic workpiece having a maximum hardness value of equal to, or less than, about 65 Rc includes the step of grinding the workpiece with a bonded abrasive tool at a material removal rate in a range of between about 0.25 in3/min·in and about 60 in3/min·in and at a maximum specific cutting energy of about 10 Hp/in3·min.

Abstract: This polishing apparatus includes a head that holds a semiconductor wafer, a polishing pad that polishes a surface to be polished of the semiconductor wafer held by the head, and a dresser that reconditions the polishing pad by cutting the polishing pad. The polishing apparatus polishes a surface to be polished of the semiconductor wafer while causing the head and the polishing pad to rotate and reconditions the polishing pad by use of the dresser before and after polishing the surface to be polished. The polishing apparatus of the present invention supports at least two dressers so that the dressers can rotate on their own axes and further includes a dresser oscillator that causes the dressers to oscillate simultaneously on the polishing pad.

Abstract: A method and apparatus for temperature control for a chemical mechanical polishing process is provided. In one embodiment, the method comprises polishing the substrate with a surface of a polishing pad assembly, measuring a real-time temperature of the surface of the polishing pad assembly, determining whether the real-time temperature of the surface of the polishing pad assembly is within a predetermined processing temperature range, and contacting the surface of the polishing pad assembly with a pad conditioner to adjust the temperature of the surface of the polishing pad assembly to fall within the predetermined temperature range.

Abstract: A grinding method for a wafer having a plurality of devices on the front side, wherein the back side of the wafer is ground by a grinding wheel to suppress the motion of heavy metal in the wafer by a gettering effect and also to maintain the die strength of each device at about 1,000 MPa or more. The grinding wheel is composed of a frame and an abrasive member fixed to the free end of the frame. The abrasive member is produced by fixing diamond abrasive grains having a grain size of less than or equal to 1 ?m with a vitrified bond. A protective member is attached to the front side of the wafer and the wafer is held on a chuck table in the condition where the protective member is in contact with the chuck table. The grinding wheel is rotated as rotating the chuck table to thereby grind the back side of the wafer by means of the abrasive member so that the average surface roughness of the back side of the wafer becomes less than or equal to 0.

Abstract: A substrate holding mechanism, a substrate polishing apparatus and a substrate polishing method have functions capable of minimizing an amount of heat generated during polishing of a substrate to be polished and of effectively cooling a substrate holding part of the substrate holding mechanism, and also capable of effectively preventing a polishing solution and polishing dust from adhering to an outer peripheral portion of the substrate holding part and drying thereon. The substrate holding mechanism has a mounting flange, a support member 6 and a retainer ring. A substrate to be polished is held on a lower side of the support member surrounded by the retainer ring, and the substrate is pressed against a polishing surface of a polishing table. The mounting flange is provided with a flow passage contiguous with at least the retainer ring. A temperature-controlled gas is supplied through the flow passage to cool the mounting flange, the support member and the retainer ring.

Abstract: Semiconductor wafers are processed so as to remove material on one or both sides by means of at least one grinding tool, with coolant supplied into a contact region between the semiconductor wafer and the at least one grinding tool, characterized in that the coolant flow rate is set as a function of a grinding tooth height of the at least one grinding tool and this coolant flow rate is reduced as the grinding tooth height decreases.

Abstract: A dynamic pressure in the coolant supplied between a rotating grinding wheel and a rotating workpiece is released by making at least one of oblique grooves on the grinding wheel pass vertically through a contact surface on which a grinding surface of the grinding wheel contacts the workpiece. Where one and the other side intersection points are defined as intersection points at which both ends of each oblique groove respectively cross extension lines of one and the other side edges parallel to a grinding wheel circumferential direction of the contact surface, the other side intersection point of each oblique groove overlaps the one side intersection point of an oblique groove next to each such oblique groove by a predetermined overlap amount in the grinding wheel circumferential direction, and the length in the grinding wheel circumferential direction of the contact surface is made to be shorter than the overlap amount.

Abstract: A chemical mechanical apparatus comprises a polishing platen, a roller pad assembly capable of advancing a polishing pad across the platen, a substrate carrier to press a substrate against the polishing pad, and a heater to heat the substrate to a temperature sufficiently high to provide a rate of removal of material from the substrate that compensates for the wear of the polishing pad.

Abstract: Methods for cylindrical grinding a workpiece are disclosed. The method includes cylindrical grinding, with a bonded abrasive wheel having a permeable structure that includes interconnected porosity, a workpiece at a specific cutting energy of less than about 12 Hp/in3·min (29.7 J/mm3), and a material removal rate of at least about 1 in3/min·in (10.8 mm3/sec/mm)grinding. The bonded abrasive wheel may include at least about 3 volume percent of a filamentary sol-gel alpha-alumina abrasive grain having an average length-to-cross-sectional-width ratio of greater than about 4:1, or agglomerates thereof. In one embodiment, the workpiece is ground in the presence of a water soluble oil.

Abstract: A method of reconditioning a medical device may include removing a portion of the medical device, and attaching to the medical device a replacement piece formed from nickel carbide and sized, shaped, and positioned to replace the portion removed.

Abstract: A polishing method can bring a polishing surface to the optimum condition for polishing, without using a dummy wafer or the like, before resuming polishing, thereby eliminating the cost of dummy wafer or the like. The polishing method comprises: carrying out a stand-by operation during a polishing-resting time period; carrying out a preparatory process to polishing, after completion of the stand-by operation, by dressing a polishing surface while supplying a polishing liquid to the polishing surface; and starting polishing of a workpiece after completion of the preparatory process to polishing. Determination as to whether to carry out the preparatory process to polishing after completion of the stand-by operation may be made based on the total operating time of the stand-by operation or the total effective number of the stand-by operations.

Abstract: Planarizing workpieces, e.g., microelectronic workpieces, can employ a process indicator which is adapted to change an optical property in response to a planarizing condition. This process indicator may, for example, change color in response to reaching a particular temperature or in response to a particular shear force. In this example, the change in color of the process indicator may be correlated with an ongoing operating condition of the planarizing machine, such as excessive downforce, or correlated with an endpoint of the planarizing operation. Incorporating the process indicator in the planarizing medium, as proposed for select applications, can enable relatively simple, real-time collection of information which can be used to control a planarizing operation.

Abstract: A grinding machine is provided with first and second grinding wheels selectively used in dependence on the steps of machining operations. The second grinding wheel is grooved so that at least one oblique groove vertically crosses a contact surface on which a grinding surface of the second grinding wheel contacts with a workpiece, and thus, is capable of releasing a dynamic pressure in coolant generated between the grinding surface and the workpiece since coolant supplied from over the contact surface flows out from both of the upper and lower sides of the contact surface through the at least one oblique groove. Since it does not occur that fluctuations in the dynamic pressure generated in coolant cause the distance between the second grinding wheel and the workpiece to be varied, the accuracy in grinding the workpiece with the second grinding wheel can be enhanced.

Abstract: A method of determining a position of a coolant nozzle relative to a rotating grinding wheel removing material from a work-piece and an apparatus for practicing the method are disclosed. The method includes the step of disposing a coolant nozzle having a base and a distal end for adjustable movement relative to the grinding wheel and the work-piece. The distal end of the coolant nozzle can be moved in a first plane normal to an axis of the grinding wheel along a first arcuate path centered on a pivot axis at the base. The distal end can also be moved by moving the pivot axis in the first plane along an orbit centered on the grinding wheel axis. The method also includes the step of selecting a position of the distal end along the first arcuate path. The method also includes the step of projecting a second arcuate path in the first plane centered on the grinding wheel axis and having a radius extending to the position of the distal end along the first arcuate path.

Abstract: The sensitivity of the ABS shape of a suspension mounted slider to temperature variations can be greatly reduced if the backside of the slider is lapped to a smooth convex contour that is similar to the ABS shape, rather than to a planar shape, prior to mounting the slider on the suspension. When the backside surfaces of sliders are shaped in this manner, the size of changes in the crown height of the ABS shape due to temperature variations are greatly reduced and the ABS shapes are distributed more tightly, thereby increasing disk drive reliability.

Abstract: A work having a portion to be ground, such as a tapered surface, is ground by a grinder driven by a driving device. During grinding operation, coolant is supplied to a grinding surface of the grinder and the portion to be ground. After the grinding operation is completed, the coolant is continued to be supplied for removing sludge on the grinder while the grinder is leaving the work and returning to its original position. The coolant may be pressurized to a higher level when it is supplied for removing the sludge than when it is supplied during the grinding operation. The number of works that have been already ground may be counted, and the coolant for removing the sludge may be supplied only when the number of works exceeds a predetermined number. Alternatively, the sludge is removed by brushing when the number of works does not reach the predetermined number.

Abstract: A bevel/backside polymer removing method removes multi-layered bevel/backside polymers adhering to a bevel surface and a backside of a target substrate. The multi-layered bevel/backside polymers include an inorganic layer and an organic layer. The bevel/backside polymer removing method includes mechanically destroying the multi-layered bevel/backside polymers and heating residues of the multi-layered bevel/backside polymers mechanically destroyed.

Abstract: A polishing method and a polishing apparatus capable of polishing a surface of a substrate made of SiC or diamond extremely smoothly and efficiently without causing subsurface damage are provided. A polishing platen 1 can rotate around a rotating shaft 4, and is made of quartz having high transparency to ultraviolet radiation. A large number of grooves 11 are arranged on a front surface of the polishing platen 1 in a lattice form, and each of the grooves 11 is filled with solid photocatalytic particles 20 (CeO2). The polishing platen 1 is relatively rubbed against a to-be-polished surface 30A of a substrate 30 made of silicon carbide (SiC) or diamond (C) while pressing the polishing platen 1 to the to-be-polished surface 30A of the substrate 30 with a very high pressure, thereby the to-be-polished surface 30A is oxidized by the solid photocatalytic particles 20 to perform chemical polishing.

Abstract: A method of determining a position of a coolant nozzle relative to a rotating grinding wheel removing material from a work-piece and an apparatus for practicing the method are disclosed. The method includes the step of disposing a coolant nozzle having a base and a distal end for adjustable movement relative to the grinding wheel and the work-piece. The distal end of the coolant nozzle can be moved in a first plane normal to an axis of the grinding wheel along a first arcuate path centered on a pivot axis at the base. The distal end can also be moved by moving the pivot axis in the first plane along an orbit centered on the grinding wheel axis. The method also includes the step of selecting a position of the distal end along the first arcuate path. The method also includes the step of projecting a second arcuate path in the first plane centered on the grinding wheel axis and having a radius extending to the position of the distal end along the first arcuate path.

Abstract: In a rough grinding step the large quantity of coolant supplied to cool the grinding point enables the flow to pass through a wheel-following air layer and reach the grinding point while the supply of an air jet is stopped during this step. At a fine grinding step, the grinding point can be cooled with a small quantity of coolant in so far it is reliably supplied to the grinding point. This is realized by supplying an air jet to intercept the wheel-following air layer which rotates to follow the grinding wheel, while supplying the coolant in small quantity. Consequently, the coolant is prevented from being scattered by the air jet and suspended in form of mist when supplied in large quantity at the rough grinding step, and the coolant quantity used can be reduced at fine grinding step and minute grinding step.

Abstract: A method and apparatus for cutting a profile in a workpiece, such as a turbine disk, without cracking the parent material which includes providing a grinding wheel having a ceramic grinding surface formed with an optimized grain material and grain spacing to produce large chips that are easily removed from the workpiece, applying the grinding wheel to the workpiece at a predetermined material removal rate, and increasing the material removal rate when the burning point is recognized at the surface of the workpiece by the grinding action of the grinding wheel, and delivering coolant/lubricant to the workpiece during the grinding operation.

Abstract: Brut polishing of superhard materials to remove positive asperities by use of pressure and heat.

Abstract: A biopsy device having a cannula with a distal tip is disclosed. The distal tip includes a blade, and can be a unitary metal injection molded component including a base and a blade. The blade can have a hardness of at least 40 HRC. The blade can be hardened, polished, and then honed to provide a sharp leading edge.