Abstract: A method of monitoring progress of polishing of a substrate having at least two regions including a first region and a second region with different structures is provided. The method includes: applying light to plural measurement points on the substrate during polishing of the substrate; receiving reflected light from each measurement point; measuring intensity of the reflected light; producing a spectrum of the reflected light from the intensity; classifying the spectrum as spectrum of the reflected light from the first region or as spectrum of the reflected light from the second region based on a shape of the spectrum or the intensity of the reflected light; and monitoring progress of polishing of the substrate based on a temporal change in the spectrum of the reflected light from the first region.

Abstract: The invention relates to a method and an arrangement for re-creation of an optimized contour of the leading edges of gas-turbine blades, in which a gas-turbine blade (2) is passed by one or more grinding machine or machines (71, 71?) with the aid of a computer-controlled robot (10). The desired contour is achieved by following a movement procedure which is stored in a data memory (21). The stored movement procedure is designed to convert a blade from a previously determined statistical mean wear state to a likewise previously determined or calculated design contour. The contact pressure of the gas-turbine blade on the grinding disk or disks (71, 71?) is measured and is taken into account in the movement procedure of the robot (10) such that the desired design contour is achieved irrespective of the initial contour and wear of the grinding disks.

Abstract: The described embodiment relates generally to the development of a finishing process for a device housing. The device housing can be formed of a thermoplastic, or a metal such as aluminum or stainless steel. A method and an apparatus are described for accurately measuring the amount of material removed during a finishing process. More particularly embodiments described within this application disclose a method of accurately measuring material removal during a finishing process across a curved or spline shaped surface by drilling an array of pockets along a surface of the device housing, where the drilled pockets can be used to measure material removal rates with a high degree of accuracy.

Abstract: An automatic grinding machine for end mills for wood, programmable with optical reading of geometric features and for computerized sharpening, has a compact structure, which includes a computerized control panel actuating various assemblies adapted for automated sharpening. A first optical reading assembly has an arm for automatic movement from an inactive position to a position suited for detecting the geometric features of the end mill. A second assembly for holding the end mill is configured to move on command forward and backward and/or simultaneously rotate the mill about its own axis. A third assembly for supporting a cup grinding wheel is mounted on the vertical frame, which rests on a rotatable circular and horizontal base. The grinding wheel can move above and below, longitudinally along the mill and/or in front of it, on the right and left side to sharpen end mills for wood with a left-handed or right-handed helix.

Abstract: A pressure regulator includes: a pressure-regulating valve configured to regulate pressure of a fluid supplied from a fluid supply source; a first pressure sensor configured to measure the pressure regulated by the pressure-regulating valve; a second pressure sensor located downstream of the first pressure sensor; a PID controller configured to produce a correction pressure command value for eliminating a difference between a pressure command value and a pressure value of the fluid measured by the second pressure sensor; and a regulator controller configured to control operation of the pressure-regulating valve so as to eliminate a difference between the correction pressure command value and a pressure value of the fluid measured by the first pressure sensor.

Abstract: A device for measuring tooth surface deviation includes a contact detector that measures the deviation at the tooth surface of a dresser with respect to a grinding tooth surface formed on a helical grinding tooth of a grinding tool when the grinding tool and a dresser toothed wheel are rotated synchronously in a state in which the grinding tooth surface and the dresser tooth surface of the dresser toothed wheel can be brought into contact, and detects contact between the grinding tooth surface and the dresser tooth surface; and a controller that changes the speed of rotation of the dresser toothed wheel in such a way that the detection result of the contact detector comes within the range of contact determination data, and also measures the amount by which the grinding tool and the dresser toothed wheel have been changed in one revolution of the dresser toothed wheel.

Abstract: Provided are a conditioner of a chemical mechanical polishing apparatus for polishing a substrate over a platen pad that rotates and a method thereof. The conditioner includes a disk holder, a piston rod, a housing, and a load sensor. The disk holder secures a conditioning disk that finely cuts a surface of the platen pad. The piston rod delivers a normal force to the disk holder. The housing covers at least a portion of the piston rod. The load sensor is installed to receive the normal force that the piston rod delivers to the piston rod and measuring the normal force.

Abstract: A system and method for removing an outer layer of resilient material from an object to achieve a target outer dimension includes performing an initial cut at a cutting depth to remove an outer layer of the material. A parameter indicative of a work input to a cutter that performed the cut is acquired and used to determine the cutting depth that will be used for performing a subsequent cut to remove an additional layer. In this way, subsequent cuts are performed until the target outer dimension is achieved.

Abstract: A deep hole drill head support pad whose edge chamfers are formed in a continuous grinding operation so that there are no discontinuities in the angled side surface leading up to the outer surface thereof. A method of manufacturing the support pad includes generating a virtual guide metric including a curved travel path for a grinding surface around a support pad blank, and a plurality of control surfaces intersecting with the curved path at separate locations along its length, each control surface defining an angle of orientation of the grinding surface. A CNC grinding machine can interpret the virtual guide metric to change the angle of orientation of a grinding surface relative to a support pad blank as it moves between adjacent control surfaces in a continuous manner.

Abstract: An eddy current sensor is used for detecting a metal film (or conductive film) formed on a surface of a substrate such as a semiconductor wafer. The eddy current sensor includes a sensor coil disposed near a metal film or a conductive film formed on a substrate, and the sensor coil includes a detection coil operable to detect an eddy current produced in the metal film or the conductive film. The detection coil includes a coil formed by winding a wire by a single row and plural layers, the row being defined as a direction perpendicular to the substrate and the layer being defined as a direction parallel to the substrate.

Abstract: A method and apparatus for measuring the polishability of a solid material such as a dental restorative material includes using a series of apparatus to perform the steps of forming the material into a desired specimen with a generally planar surface, conditioning the surface by abrasion, measuring the abraded surface with a profile determination device, optionally measuring the amount of material abraded from the surface and the gloss of the abraded surface, polishing a portion of the abraded surface with a polishing device at a controlled load for a pre-determined time and measuring the roughness and/or gloss of the polished surface followed by comparison thereof to the corresponding measurements of the unpolished, conditioned portion of the specimen surface. Polishing materials and devices may also be tested using the apparatus and method for polishing a standardized material.

Abstract: A processing apparatus includes a turn table rotatably provided and having an opening; at least five chuck tables provided on the turn table, each chuck table having a holding surface for holding a workpiece; a support bed inserted through the opening of the turn table; four processing unit supporting mechanisms each including a first support column provided on the outside of the turn table, a second support column provided on the support bed, and a support member mounted to the first and second support columns; four processing units respectively supported by the four processing unit supporting mechanisms, the four processing units respectively corresponding to four of the at least five chuck tables; and four feeding units for respectively moving the four processing units in a direction perpendicular to the holding surfaces of the chuck tables.

Abstract: A lapping system for lapping portions of a workpiece. The lapping system includes, a lap that is defined by a surface. Portions of the surface are a lapping surface. The lapping surface has a coating that enhances material removal from a workpiece in a lapping process. The lapping system further includes, a scanning probe microscope having a tip and a substrate. The scanning probe microscope controls lapping motion of the lap and workpiece.

Abstract: A method dresses a polishing member with a diamond dresser having diamond particles arranged on a surface thereof. The method includes determining dressing conditions by performing a simulation of a distribution of a sliding distance of the diamond dresser on a surface of the polishing member, and dressing the polishing member with the diamond dresser under the determined dressing conditions. The simulation includes calculating the sliding distance corrected in accordance with a depth of the diamond particles thrusting into the polishing member.

Abstract: A method for manufacturing a magnetic write pole of a magnetic write head for perpendicular magnetic recording. A magnetic write pole material is deposited, followed by union milling hard mask, a polymer mask under-layer followed by a dielectric hard mask material, followed by a photoresist. The photoresist is patterned to define a write pole shape and the shape of the patterned photoresist is transferred onto the underlying dielectric hard mask by a novel reactive ion etching that is performed in a chemistry that includes one or more fluorine containing gases and He. The presence of He in the reactive ion etching tool helps to improve the profile of the patterned dielectric hard mask. In addition, RIE parameters such a gas ratio (e.g. CF4 to CHF3 gas ratio) and power ratio (e.g. source power to bias power) are adjusted to optimize the profile of the patterned dielectric mask.

Abstract: A method and apparatus for robotic devices that can be used to load and remove workpieces and abrasive disks for an abrading system having a floating, rotatable abrading platen that is three-point supported by annular, flat abrading-surface of the floating platen. The rotary spindles are mounted on the flat horizontal surface of a machine base and the spindle-top flat surfaces are aligned to be precisely co-planar with each other where the rotational-centers of each of the spindles fixed-position rotary flat-surfaced spindles. The flexible abrasive disks are releasably attached to the are positioned at the center of the annular radial-width of the platen abrading-surface. Flat-surfaced workpieces are attached to the spindle-top flat surfaces and the abrasive surface of the abrasive disk that is attached to the rotating floating-platen abrading surface contacts the workpieces to perform single-sided abrading on the workpieces.

Abstract: Three rotary wafer abrasive lapping spindles having attached wafers are mounted on the flat surface of a granite lapping machine base. A flexible raised island abrasive disk is attached to the annular abrading surface of an abrading platen that is rotated at high speeds to flat lap, or polish, the exposed surfaces of the rotating wafers. Resilient wafer pads are used to minimize the effects of the abraded surfaces of the wafers not being precisely parallel to the platen abrading surface due to misalignment of the spindle tops. The resilient pads also compensate for two opposed flat surfaces of wafers not precisely parallel with each other. A mixture of the same types of chemicals that are used in the conventional CMP polishing of wafers with applied coolant water can be used with this abrasive lapping or polishing system to enhance abrading and to continually wash abrading debris from the wafers.

Abstract: There are three flat-surfaced rotary workpiece abrasive lapping spindles that are spaced apart from each other in a circle and are attached to the flat surface of a granite lapping machine base. Flat-surfaced workpieces are attached to the flat rotary surfaces of the workpiece spindles. Flexible abrasive disks are attached to the annular abrading surface of a rotary platen that is positioned to be concentric with the three spaced workpiece spindles. The platen is moved where the disk abrasive surface contacts the workpieces that are attached to the workpiece spindles. Both the platen and the workpieces spindles are rotated at high speeds to flat lap the exposed surfaces of the workpieces. A laser alignment device having laser distance sensors is attached to one of the rotary workpiece spindles. These laser alignment distance sensors are used to co-planar align the top flat surfaces of all of the workpiece spindles.

Abstract: A polishing method includes positioning two substrates in contact with the same polishing pad. Prior to commencement of polishing and while the two substrates are in contact with the polishing pad, two starting values are generated from an in-situ monitoring system. Either a starting polishing time or a pressure applied to one of the substrates can be adjusted so that the two substrates have closer endpoint conditions. During polishing the two substrates are monitored with the in-situ monitoring system to generate a two sequences of values, and a polishing endpoint can be detected or an adjustment for a polishing parameter can be based on the two sequences of values.

Abstract: A portable control unit may be quickly coupled and decoupled from docking stations on a plurality of process system components, such as cylindrical grinding machines. The portable control unit may be used to control the process system component and receive and output data produced by the process system component. The ability to quickly couple and decouple the portable control unit may allow a single portable control unit to be used to control numerous process system components, thereby saving cost and space. Various communications interfaces and attachment mechanisms may be used to communicatively and mechanically couple the portable control unit to a docking station.

Abstract: A method of reducing manufacturing defects of semiconductor wafers during a back-grinding process. The method includes receiving a semiconductor wafer on a chuck table, wherein said chuck table has a surface upon which a front side of the wafer is placed, and wherein said chuck table has one or more holes in surface and one or more sensors placed in said one or more holes. The method further includes grinding at least a portion of a back side of the semiconductor wafer. The method further includes monitoring a parameter, while grinding, measured by the one or more sensors and adjusting the grinding based at least on the monitored parameter.

Abstract: A method of controlling polishing includes storing a sequence of default values, polishing a substrate, monitoring the substrate during polishing with an in-situ monitoring system, generating a sequence of measured values from measurements from the in-situ monitoring system, combining the sequence of measured values with the sequence of default values to generate a sequence of modified values, fitting a function to the sequence of modified values, and determining at least one of a polishing endpoint or an adjustment for a polishing rate based on the function.

Abstract: A method of controlling a polishing operation includes polishing a substrate, during polishing obtaining a sequence over time of measured spectra from the substrate with an in-situ optical monitoring system, for each measured spectrum from the sequence of measured spectra determining a difference between the measured spectrum and an immediate previous spectrum from the sequence, accumulating the difference for each measured spectrum to generate a total difference, comparing the total difference to a threshold, and detecting a polishing endpoint based on the comparison of the total difference to the threshold.

Abstract: A polishing method includes simultaneously polishing a first substrate and a second substrate on the same polishing pad, storing a default overpolishing time, determining first and second polishing endpoint times of the first and substrates with the in-situ monitoring system, determining a difference between the first and second polishing endpoint times, and determining whether the difference exceeds a threshold. If the difference is less than the threshold, then an overpolishing stop time is calculated and polishing of the first substrate and the second substrates is halted simultaneously at the overpolishing stop time. If the difference is greater than the threshold, then first and second overpolishing stop times that equal the first and second endpoint times plus the default overpolishing time are calculated, and polishing of the first and second substrates is halted at the first and second overpolishing stop times, respectively.

Abstract: Exemplary embodiments of the subject invention comprise methods and apparatus concerning balanced abrading of a tire surface by an abrading tool. Such an abrading tool may comprise a pair of counter-rotating, driven abrading members, each of the abrading members having a rotational axis generally extending laterally across the tool, the abrading members being spaced apart in a lateral direction of the tool by a desired distance, each of the abrading members having an abrading surface defined by at least one outer diameter, the abrading surface extending axially relative to the rotational axis of the abrading member, wherein each of the abrading has a shaft upon which each abrading member is arranged, each of the shafts being adapted to be driven by a driving source. The tool further includes a body to which each shaft and abrading member is attached.

Abstract: A flexure assembly comprising a flexure stack comprising a plurality of individual webs connected together with a force in an x-direction to produce a friction in a z-direction orthogonal to the x-direction between the plurality of webs, the friction holding the plurality of webs in engagement. In some embodiments, the flexure assembly includes a second flexure stack fixedly spaced from the first stack comprising a second plurality of individual webs connected together with a second force in the x-direction to produce a second friction in the z-direction between the second plurality of webs. The flexure assembly may be used, for example, for supporting a workpiece such as a slider row bar in a lapping machine.

Abstract: A method of forming bare silicon substrates is described. A bare silicon substrate is measured, wherein measuring is performed by a non-contact capacitance measurement device to obtain a signal at a point on the substrate. The signal or a thickness indicated by the signal is communicated to a controller. An adjusted polishing parameter according to the signal or thickness indicated by the signal is determined. After determining an adjusted polishing parameter, the bare silicon substrate is polished on a polisher using the adjusted polishing parameter.

Abstract: A polishing apparatus includes a platen to hold a polishing pad having a plurality of optical apertures, a carrier head to hold a substrate against the polishing pad, a motor to generate relative motion between the carrier head and the platen, and an optical monitoring system. The optical monitoring system includes at least one light source, a common detector, and an optical assembly configured to direct light from the at least one light source to each of a plurality of separated positions in the platen, to direct light from each position of the plurality of separated positions to the substrate as the substrate passes over said each position, to receive reflected light from the substrate as the substrate passes over said each position, and to direct the reflected light from each of the plurality of separated positions to the common detector.

Abstract: A system and a method of operating a chemical mechanical polishing (CMP) system comprises a slurry delivering unit configured for locally varying the supply of slurry while polishing the substrate. To this end, the slurry delivering unit may comprise at least one slurry outlet over a polishing pad of the CMP system, wherein the at least one slurry outlet is controllably movable to distribute slurry over the polishing pad.

Abstract: A processing end point detection method detects a timing of a processing end point (e.g., polishing stop, changing of polishing conditions) by calculating a characteristic value of a surface of a workpiece (an object of polishing) such as a substrate. This method includes producing a spectral waveform indicating a relationship between reflection intensities and wavelengths at a processing end point, with use of a reference workpiece or simulation calculation, based on the spectral waveform, selecting wavelengths of a local maximum value and a local minimum value of the reflection intensities, calculating the characteristic value with respect to a surface, to be processed, from reflection intensities at the selected wavelengths, setting a distinctive point of time variation of the characteristic value at a processing end point of the workpiece as the processing end point, and detecting the processing end point of the workpiece by detecting the distinctive point during processing of the workpiece.

Abstract: A polishing pad for polishing a workpiece to a mirror finish is attached to a rotatable polishing table of a chemical mechanical polishing apparatus. The workpiece, such as a metal body, is held by a carrier and pressed against the polishing pad. This polishing pad includes: an elastic pad having a polishing surface; a deformable base layer that supports the elastic pad; and an adhesive layer that joins the elastic pad to the base layer.

Abstract: A method for manufacturing a magnetic sensor that includes depositing a plurality of mask layers, then forming a stripe height defining mask over the sensor layers. A first ion milling is performed just sufficiently to remove portions of the free layer that are not protected by the stripe height defining mask, the first ion milling being terminated at the non-magnetic barrier or spacer layer. A dielectric layer is then deposited, preferably by ion beam deposition. A second ion milling is then performed to remove portions of the pinned layer structure that are not protected by the mask, the free layer being protected during the second ion milling by the dielectric layer.

Abstract: A polishing method includes simultaneously polishing two substrates, a first substrate and a second substrate, on the same polishing pad. A default overpolishing time is stored and an in-situ monitoring system monitors the two substrates. The in-situ monitoring system further determines a first polishing endpoint time and a second polishing endpoint time of the first and second substrates, respectively. The polishing method further includes calculating an overpolishing stop time where the overpolishing stop time is between the first polishing endpoint time plus the default overpolishing time and the second polishing endpoint time plus the default overpolishing time. Polishing of the first substrate is continued past the first polishing endpoint time and polishing of the second substrate is continued past the second polishing endpoint time. Polishing of both the first substrate and the second substrate is halted simultaneously at the overpolishing stop time.

Abstract: The present invention provides an apparatus and a method for polishing a substrate having a film formed thereon. The method includes: rotating a polishing table supporting a polishing pad by a table motor; pressing the substrate against the polishing pad by a top ring; obtaining a signal containing a thickness information of the film; producing from the signal a polishing index value that varies in accordance with a thickness of the film; monitoring a torque current value of the table motor and the polishing index value; and determining a polishing end point based on a point of time when the torque current value has reached a predetermined threshold value or a point of time when a predetermined distinctive point of the polishing index value has appeared, whichever comes first.

Abstract: A process and an apparatus for generating control data for controlling a tool on a machine tool comprising at least 5 axes for the production of a predetermined finished part having a base body and at least one flank section protruding from the base body, finished part geometry data of the predetermined finished part geometry of the finished part being generated by means of fundamental geometry parameters and path data being generated by means of the finished part geometry data, the path data indicating the tool path along the surface of the flank section over which the tool has to travel with what tool orientation relative to the workpiece to remove material from the workpiece, the tool orientation of the tool corresponding to an orientation of a axis of rotation of the tool and the tool rotating about the axis of rotation of the tool to remove material from the workpiece.

Abstract: A tool for moving an abrasive media can include a tool body and a drive system housed in the tool body. The drive system can include an output member. A retaining member can be disposed on the tool body. A first platen having a first attachment hub can be selectively coupled with the retaining member in an installed position. The first platen can have a first rotatable member that selectively attaches to the output member in a first mode of operation. A second platen having a second attachment hub can selectively couple with the retaining member in an installed position. The second platen can have a second rotatable member that selectively attaches to the output member in a second mode of operation.

Abstract: A polishing method is used for polishing a film formed on a substrate by pressing the substrate against a polishing pad. The polishing method includes preparing, in advance, an algorithm for correction of polishing time from a relationship between a known amount of wear of the polishing pad or a known thickness of the polishing pad, and a polishing time and a polishing amount; setting a polishing target value for the film; and measuring an amount of wear of the polishing pad or a thickness of the polishing pad. The polishing method further includes determining an optimal polishing time for the polishing target value from the measured amount of wear of the polishing pad or the measured thickness of the polishing pad and from the algorithm; and polishing the film for the determined optimal polishing time.

Abstract: Implementations of the metal polishing processes of the present disclosure machine polish patterns onto metal using various abrasive disks. The abrasive disks can be machine controlled using programmed commands. In some implementations, the programmed commands are derived based on the desired pattern using computer-aided manufacturing (CAM) technology. The programmed commands automatically operate a machine to polish a pattern onto metal using the abrasive disks.

Abstract: An eyeglass lens processing apparatus includes: a marking unit forming a mark on a lens; a mark position detector detecting a position of the mark; a controller performing roughing process and finishing process after the roughing process; and a positional deviation detector detecting a rotational deviation of the lens after the roughing process. The controller obtains a roughing path which allows, even if the lens rotates with respect to the lens chuck shafts by an angle at the time of the roughing process, the controller to perform the finishing process. The controller obtains an area in a process in which the mark and the target lens shape rotate on a chuck center of the lens chuck shafts by the angle, and computes the roughing path based on the area. The controller performs the roughing process based on the roughing path.

Abstract: A chemical mechanical polishing method is provided. The chemical mechanical polishing method includes steps of providing a plurality of semiconductor elements to be polished, obtaining a respective dimension of the each semiconductor element to be polished, and polishing the each semiconductor element according to the respective dimension thereof.

Abstract: A machining method comprises selecting a finished surface dimension and a material property for a working surface, defining a working temperature range based on the selected material property, and defining a machining power based on the working temperature range. The machining power depends on a removal rate and a specific heat of the working surface. The working surface is machined at the removal rate to achieve the finished surface dimension, and the machine power is controlled to maintain the working surface within the working temperature range. The working surface is heated or cooled from the working temperature range to a transition temperature range, such that the selected material property is preserved in the working surface.

Abstract: A method and apparatus for releasably attaching flexible abrasive disks to a flat-surfaced platen that floats in three-point abrading contact with three flat-surfaced rotatable fixed-position workpiece spindles that are mounted on a nominally-flat abrading machine base. The spindle-top flat surfaces are precisely co-planar with each other and approximately co-planar with the machine base horizontal surface. The three spindles are positioned to form a triangle of platen supports where the rotational-centers of each of the spindles are positioned at the center of the annular width of the platen abrading-surface. Flat surfaced workpieces are attached to the spindles and the rotating floating-platen abrasive surface contacts the workpieces to perform single-sided abrading on them. The disk abrasive surfaces can be re-flattened by attaching abrasive disk-type components to the three spindles that are rotated while in abrading contact with the rotating abrasive disk.

Abstract: Methods and systems for imaging and cutting semiconductor wafers and other microelectronic device substrates are disclosed herein. In one embodiment, a system for singulating microelectronic devices from a substrate includes an X-ray imaging system having an X-ray source spaced apart from an X-ray detector. The X-ray source can emit a beam of X-rays through the substrate and onto the X-ray detector, and X-ray detector can generate an X-ray image of at least a portion of the substrate. A method in accordance with another embodiment includes detecting spacing information for irregularly spaced dies of a semiconductor workpiece. The method can further include automatically controlling a process for singulating the dies of the semiconductor workpiece, based at least in part on the spacing information. For example, individual dies can be singulated from a workpiece via non-straight line cuts and/or multiple cutter passes.

Abstract: A method and a device for machining the leading edge of a turbine engine blade by a machining center for which parameters are set is disclosed. The method includes: acquiring a 3D profile of the leading edge of the blade; calculating at least one characteristic of the leading edge from the 3D profile; comparing the value of the calculated characteristic with a known theoretical value of the characteristic to obtain an elementary difference for the characteristic; calculating at least one undulation of the leading edge between at least two consecutive elementary sections from the 3D profile; optimizing the elementary differences obtained as a function of the undulation; setting the parameters of the machining center as a function of the optimized elementary differences for the elementary sections to define machining passes over the leading edge; and machining the leading edge of the blade with the machining center with parameters set.

Abstract: An apparatus for grinding a substrate includes a stage part configured to support a substrate thereon, a grinding part, a camera part, a replacing part and a control unit. The grinding part includes a grinding wheel configured to grind an edge of the substrate. The camera part is configured to take a picture of the grinding wheel, analyze the picture of the grinding wheel and generate information about the grinding wheel. The replacing part includes a spare grinding wheel and is configured provide the spare grinding wheel to the grinding part or pick up the grinding wheel from the grinding part. The control unit is configured to receive the grinding wheel information from the camera part and offset compensate a position of the grinding wheel on the basis of the grinding wheel information or communicate with the replacing part to replace the grinding wheel on the basis of the grinding wheel information.

Abstract: An ultrasonic trimming apparatus is composed of an articulated robot, a cutting apparatus, and a grindstone. The cutting apparatus is composed of an ultrasonic oscillator supported by the end portion of the robot, a cutter blade which is supported by the ultrasonic oscillator, and a workpiece securing portion which secures a workpiece. The grindstone is disposed within the movable range of the cutter blade driven by the robot and is placed in a position at which the cutter blade can pressure contact the cutter blade. The cutter blade is ultrasonically vibrated by the ultrasonic oscillator and is ground while being pressed against the grindstone by means of the articulated robot. The ultrasonic trimming apparatus efficiently cuts a sheet material composed of soft material such as plastic, fabric, or rubber, a composite material, or a material containing glass fiber even when the material has a three-dimensional shape.

Abstract: A method of polishing end point detection includes polishing a surface of a substrate; applying light to the surface of the substrate and receiving reflected light from the substrate during the polishing of the substrate; measuring reflection intensities of the reflected light at respective wavelengths; creating a spectral profile indicating a relationship between reflection intensity and wavelength from the reflection intensities measured; extracting at least one extremal point indicating extremum of the reflection intensities from the spectral profile; during polishing of the substrate, repeating the creating of the spectral profile and the extracting of the at least one extremal point to obtain plural spectral profiles and plural extremal points; and detecting the polishing end point based on an amount of relative change in the extremal point between the plural spectral profiles.

Abstract: A polishing system configured to polish a lap includes a lap configured to contact a workpiece for polishing the workpiece; and a septum configured to contact the lap. The septum has an aperture formed therein. The radius of the aperture and radius the workpiece are substantially the same. The aperture and the workpiece have centers disposed at substantially the same radial distance from a center of the lap. The aperture is disposed along a first radial direction from the center of the lap, and the workpiece is disposed along a second radial direction from the center of the lap. The first and second radial directions may be opposite directions.

Abstract: A system and method for removing an outer layer of resilient material from an object to achieve a target outer dimension includes performing an initial cut at a cutting depth to remove an outer layer of the material. A parameter indicative of a work input to a cutter that performed the cut is acquired and used to determine the cutting depth that will be used for performing a subsequent cut to remove an additional layer. In this way, subsequent cuts are performed until the target outer dimension is achieved.

Abstract: For complex CMP processes requiring the removal of different dielectric materials, possibly in the presence of a polysilicon material, a slurry material may be adapted at the point of use by selecting an appropriate pH value and avoiding agglomeration of the abrasive particles. The in situ preparation of the slurry material may also enable a highly dynamic adaptation of the removal conditions, for instance when exposing the polysilicon material of gate electrode structures in replacement gate approaches.