Abstract: The present invention is an apparatus and method for planarizing a front surface of a wafer. The present invention may include a rigid platen, for supporting a polishing pad, connected to a supporting base that has means, or is connected to means, for orbiting the platen. A carrier, preferably a front-reference carrier with a plurality of individually controllable pressure areas, may be used to hold and press the wafer against the polishing pad while the supporting base orbits the rigid platen. The planarization process may be further optimized by orbiting the polishing pad in a radius smaller than 4 mm, orbiting the polishing pad faster than 400 orbits per minute or both.

Abstract: The present invention provides an improved planarization or polishing apparatus for chemical mechanical planarization and other types of polishing such as metal polishing and optical polishing. In an exemplary embodiment, an apparatus for polishing an object comprises a pad having a polishing surface to be placed on a target surface of the object to be polished. A pad drive member is connected to the pad to move the pad relative to the object to change a position of the polishing surface of the pad on the target surface of the object. The pad comprises a backing material having a modulus of elasticity of at least about 300,000 psi. In specific embodiments, the pad includes grooves on the polishing surface. The pad has a thickness between about 0.05 and about 0.1 inch. The pad back material comprises a ceramic material. A compliant layer may be disposed between the pad and the pad drive member. The compliant layer comprises an elastomeric material.

Abstract: A web-format polishing pad for mechanical and/or chemical-mechanical planarization of microelectronic substrate assemblies, and methods for making and using such a web-format pad. In one aspect of the invention, a web-format polishing pad for planarizing a microelectronic substrate is made by slicing a cylindrical body of pad material along a cutting line that is at least substantially parallel to a longitudinal centerline of the body and at a radial depth inward from an exterior surface of the body. For example, a web of pad material can be sliced from the body by rotating the cylindrical body about the longitudinal centerline and pressing a cutting element against the rotating cylindrical body along the cutting line. The cutting element can be a knife with a sharp edge positioned at the cutting line and a face extending along a tangent of the cylindrical body.

Abstract: A process for the surface polishing of a silicon wafer, includes the successive polishing of the silicon wafer on at least two different polishing plates covered with polishing cloth, with a continuous supply of alkaline polishing abrasive with SiO2 constituents, an amount of silicon removed during the polishing on a first polishing plate being significantly higher than on a second polishing plate, with the overall amount of silicon removed not exceeding 1.5 &mgr;m. A polishing abrasive (1a), then a mixture of a polishing abrasive (1b) and at least one alcohol, and finally ultrapure water (1c) are added to the first polishing plate, and a mixture of a polishing abrasive (2a) and at least one alcohol and then ultrapure water (2b) are added to the second plate.

Abstract: The disk burnishing process is conducted with a contact flying burnishing head wherein the leading edge of the burnishing head is disposed above the surface of the disk, while the trailing edge of the burnishing head makes contact with the surface of the disk. The contact flying configuration of the burnishing head is obtained by controlling the rotating disk RPM in conjunction with the burnishing head design characteristics. In the contact flying burnishing process, the burnishing edges of the several burnishing pads of the head are disposed at different heights relative to the disk surface, such that the leading burnishing pad edges are higher than the trailing burnishing pad edges. In this configuration, high asperities are trimmed by the burnishing pads while low asperities are not. Thus, a disk is properly burnished for subsequent hard disk drive performance with a minimum of surface debris being created by the burnishing process.

Abstract: A polishing pad has a first layer, a second layer, a hole and a plug. The hole is formed in the polishing pad and has a first section in the first layer of the polishing pad and a second section in a second layer of the polishing pad. The plug is embedded in the hole and has an upper portion and a lower portion. The upper portion of the plug fits into the first section of the hole, and the lower portion of the plug fits into the second section of the hole. Since the plug has a height of the polishing pad, the problem of depositions, such as water droplets, has been solved. The endpoint detection can thus be precisely controlled.

Abstract: A system and method for planarizing a plurality of semiconductor wafers is provided. The method includes the steps of processing each wafer along the same process path using at least two polishing stations to each partially planarize the wafers. The system includes an improved process path exchanging a detachable wafer carrying head with spindles at each processing point and conveying the detached wafer carrying heads in a rotary index table between processing points. The system also provides for improved polishing accuracy using linear polishers having pneumatically adjustable belt tensioning and aligning capabilities.

Abstract: A copper isotope is added to the layer of copper that is deposited to form the metal interface. Radioactivity emitted by the copper layer is measured during copper polishing, endpoint of the copper CMP is reached when this radioactivity starts to rapidly decrease. Another approach is to measure the radioactivity of the copper slurry that is removed during copper polishing. Polishing end-point is reached when the copper slurry radioactivity starts to rapidly increase. Yet another approach is to add copper isotopes to the copper seed layer and measure the radioactivity emitted by the seed layer. Polishing end-point is reached when the radioactivity emitted by the seed layer starts to rapidly increase.

Abstract: A chemical mechanical polishing (CMP) apparatus and method for polishing semiconductor wafers utilizes multiple wafer carriers to polish a corresponding number of semiconductor wafers on a single polishing pad in parallel. In one embodiment, the wafer carriers are used to transfer semiconductor wafers between one or more wafer transfer stations and the polishing pad. In other embodiments, one or more wafer transfer arms are used to transfer the semiconductor wafers between the wafer transfer station(s) and the wafer carriers. The CMP apparatus is configured to sequentially process semiconductor wafers to increase the throughput of the apparatus. In addition, the components of the CMP apparatus are arranged such that the footprint of the apparatus is minimized.

Abstract: An apparatus for chemically and mechanically planarizing a workpiece surface employs a polishing slurry and a microreplicated pad having a surface for planarizing the workpiece surface in the presence of the slurry. The surface of the microreplicated pad has a regular array of structures having a sharp distal apexes which contact the workpiece surface during planarization and which are subject to ablating during planarizing thereby becoming substantially blunt. The workpiece moves in a rotational, orbital or translational motion relative to the microreplicated pad.

Abstract: The fabrication of integrated circuits entails the repeated application of many basic processing steps, for instance, planarization—the process of making a surface flat, or planar. One specific technique for making surfaces flat is chemical-mechanical planarization, which typically entails applying slurry onto a surface of an integrated circuit and polishing the surface with a rotating polishing head. The head includes several holes, known as slurry dispensers, through which slurry is applied to the surface. After completion of a polishing operation, gas is forced through the slurry dispensers to separate the surface from the rotating head. Unfortunately, the gas dries slurry remaining on the surface, causing slurry particles to stick to the polished surface, which ultimately cause defects in integrated circuits.

Abstract: A ultrasonic vibration cutting tool which can optimize materials as in a separate type and can improve the transmission efficiency of ultrasonic vibration as in an integrated type. The ultrasonic vibration cutting tool comprises a ring-shaped projection and a blade essentially composed of diamond and held by the ring-shaped projection both of which are formed on the peripheral surface of a vibration conversion portion provided on a resonator, and the outer diameter of the blade is set larger than the outer diameter of the ring-shaped projection.

Abstract: A glass substrate for a magnetic disk has one or both of its surfaces processed by applying a suspension of a specified kind onto the surface to be processed while the substrate is rotated and a polishing tape is pressed and run against the surface to be processed. The suspension includes abrasive particles with average diameter selected according to the purpose of the processing and an aqueous solution containing a reacting liquid capable of causing a solid phase reaction at contact boundary surfaces between the surface of the glass substrate and these abrasive particles. The polishing tape is removed from the glass substrate when the polishing is over but while the tape is still running and the glass substrate is rotating. The supplying of the suspension is thereafter stopped and a washing liquid such as water is applied to the polished surface or surfaces while the substrate is still rotating. Both surfaces of a glass substrate may be polished at the same time.

Abstract: A chemical mechanical polishing (CMP) machine (20) includes a workpiece carrier assembly (22) having a carrier base (24) with a workpiece contacting side (26) for holding a first surface (30) of a workpiece (32). A method utilizing the CMP machine (20) to polish the workpiece (32) and achieve a minimal edge exclusion region (92) entails adapting the carrier base (24) to reduce a first diameter (53) of a workpiece contacting side (26) of the carrier base (24) to a second diameter (84). The method further calls for providing a retainer ring (68, 106) disposed concentrically on the carrier base (24) for retaining the workpiece (32), and applying pressure on the carrier base (24) to urge a second surface (34) of the workpiece (36) against a polishing pad (36) of the CMP machine (20).

Abstract: An method and apparatus for forming wafers of varying thickness'. The apparatus includes a template. The template is formed of a main disk including a plurality of cavities extending into a first side thereof. Each cavity has notches cut in the walls thereof and a pattern etched in the base thereof. Holding disks are moistened and positioned within respective cavities for releasably securing a wafer in the cavity. A moistening liquid is dispensed and diffuses into the cavities via the notches cut in the walls and collects in the pattern etched on the base of the cavity thereby increasing the suctional force used to secure the holding disk. When the template is releasably secured within a cavity, rotatably connected to a rotating head and positioned such that the first side faces a lapping and polishing surface, wafers received by the cavities are lapped and polished upon rotation of the rotating head.

Abstract: An apparatus for planarizing a surface of a semiconductor wafer includes a wafer support configured to receive the semiconductor wafer so that the surface of the semiconductor wafer projects from the wafer support. The apparatus also includes a polishing member configured in the form of an endless unitary belt which is devoid of seams. The endless unitary belt is (i) positioned in contact with the surface of the semiconductor wafer and (ii) capable of moving in a linear direction relative to the surface of the semiconductor wafer so as to planarize the surface of the semiconductor wafer. An associated method of linearly planarizing a surface of a semiconductor is also described.

Abstract: A surface of a work piece, in which a plurality of magnetic head elements are formed on a substrate, is linearly ground. The surface is linearly ground by an outer circumferential face of a disk-shaped rotary grind stone. By the linear grind, linear grind traces are formed in the work piece. By selecting the direction of the grind traces, amount and direction of warping the work piece can be controlled. By making the direction of the grind traces parallel to a direction of cutting of the work piece to form a plurality of blocks, in each of which a plurality of magnetic head elements are arranged, stress in the blocks are released and the amount of warping of the blocks can be reduced.

Abstract: This invention relates to a method and apparatus to create a pre-established textured surface on a workpiece. The pre-established textured surface includes an average roughness and a non-directional lay pattern being formed to a controlled width.

Abstract: A process for producing semiconductor wafers by double-sided polishing between two rotating, upper and lower polishing plates, which are covered with polishing cloth, while an alkaline polishing abrasive with colloidal solid fractions is being supplied, the semiconductor wafers being guided by carriers which have circumferential gear teeth and are set in rotation by complementary outer gear teeth and inner gear teeth of the polishing machine, which is distinguished by the following process steps:

Abstract: Disclosed is an improved method of providing semiconductor wafers each having bumps exposed from its resin coating. It uses a rotary wheel having at least one cutter blade formed thereon. The rotary wheel is attached to the spindle of a grinding machine, and a semiconductor wafer having bumps embedded in its resin coating is held on the chuck table of the grinding machine. The rotary wheel is positioned relative to the chuck table so that the cutter blade of the wheel may traverse the center of the chuck table when the wheel is rotated. The chuck table and the wheel are rotated in one and same direction to remove the resin coating from the semiconductor wafer until the bumps may be exposed. Thus, the bumps thus exposed are clear-cut, and coplanar with the surrounding even surface of resin coating.

Abstract: A rotary foam buffing pad is provided with a concave working face which allows the operator to provide true graduated surface contact in applying polish, buffing or glazing compounds, while containing the polishing compound against centrifugal force which would otherwise result in splattering of the compound. The manner in which the concave working face is formed and in which the edge face is formed and dressed results in dynamic balancing of the pad and reducing vibration and operator fatigue. The working surface forming and pad finishing operations further provide a velvetized texture to the pad working surfaces which further enhances the polishing or finishing process.

Abstract: Grinding wheels are fabricated with outwardly extending circular peripheral rims having a continuous rim surface to which separate abrasive pieces, preferably of a superabrasive such as CBN, are secured by suitable adhesive. The superabrasive pieces are preferably circular and of a diameter corresponding to the width of the rim and are secured to the rim surface so as to either be adjacent and touch one another or to be spaced one from the other around the circle of the rim surface so that a predetermined amount but not all of the rim surface is covered with abrasive pieces. That rim surface coverage optimize grinding efficiency while providing space for fluid flow for purposes of cooling and carrying away particles from the grinding process.

Abstract: The present invention provides exemplary cluster tool systems and methods for processing wafers, such as semiconductor wafers, including exemplary grinding methods and apparatus which provide generally uniform laser marking dot depth. One method of processing wafers prior to device formation includes providing a wafer having first and second surfaces with thickness variations therebetween. The method includes laser marking the first wafer surface, and grinding the first and second wafer surfaces. The grinding removes a portion of the first wafer surface to maintain the laser marking at a uniform depth.

Abstract: A method for performing and an apparatus to perform chemical mechanical polishing on a semiconductor wafer are disclosed. The apparatus includes a wafer holder, a polishing member, and a movable table. The movable table is in contact with and is supporting the polishing member. The polishing member includes a polishing pad, a backing layer, and a stiffening layer positioned between the backing layer and the polishing pad. The polishing pad has a polishing surface that is oriented to receive a semiconductor wafer held by the wafer holder. The polishing surface is configured to chemically mechanically polish the semiconductor wafer. The method includes holding a semiconductor wafer, moving a polishing member, and bringing a surface of the semiconductor wafer into contact with the polishing member. The polishing member includes a polishing pad, a backing layer, and a stiffening layer positioned between the polishing pad and the backing layer.

Abstract: A method of lapping semiconductor wafers includes the step of transmitting sounds generated during the lapping process to a receiver, allowing the operator to use sound to more quickly detect problems associated with starting the lap process.

Abstract: A process for the chemical-mechanical polishing of silicon wafers is by rotational movement of the silicon surface which is to be polished on a polishing plate which is covered with polishing cloth, with a continuous supply of an alkaline polishing agent which contains abrasives, at least 2 &mgr;m of material being removed from the polished silicon surface during the polishing. Immediately after the polishing has finished, and while maintaining the rotational movement, instead of the polishing agent at least two different stopping agents are supplied in succession, each removing less than 0.5 &mgr;m of material from the polished silicon surface.

Abstract: An optical disk substrate recovering apparatus A includes an optical disk storing portion 10, an abrader 20 for abrading a reflecting layer and a recording layer of the optical disk D, a powder collecting device 30 for collecting powdered reflecting materials and recording materials, and an optical disk transferring device 40 for transferring the optical disk D from the optical disk storing portion 10 to the abrader 20 one by one and for transferring the abraded disk substrate 1 to the abraded disk substrate storing portion 50. The devices 20, 30, 40 are sequentially operated to thereby obtain a pure and transparent abraded disk substrate 1 made of synthetic resin from which the reflecting layer and the recording layer are removed.

Abstract: A polishing head (200) for a chemical-mechanical polishing machine that holds a semiconductor wafer (150) against a polishing pad (140) has a chuck (295) with a pressure chamber (210) to apply a down force substantially equally to the wafer backside (152). An electrode arrangement (270) within the chamber (210) is located coplanar to the wafer (150) to provide compensation to wafer or chuck irregularities by applying a compensation force having a distribution corresponding to the irregularities.

Abstract: A vane groove grinding apparatus for compressor cylinder including a compressor cylinder holding means the compressor cylinder being provided with an inner hole and a vane groove extending radially outwardly from the inner hole, sliders being movable along a center line of the inner hole and at a right angled direction to the vane groove, a grinding disk holder facing one open side of the inner hole and a support for locking the holder facing another open side of the inner hole both being disposed on a slider adjacent to the compressor cylinder, when the grinding disk is inserted in the vane groove a distal end of the grinding disk holder is firmly engaged in the support.

Abstract: Polishing chucks, semiconductor wafer polishing chucks, abrading methods, polishing methods, semiconductor wafer polishing methods, and methods of forming polishing chucks are described. In one aspect, a polishing chuck includes a body dimensioned to hold a work piece, and a multi-positionable, force-bearing surface is positioned on the body. The surface has an undeflected position, and is bi-directionally deflectable away from the undeflected position. A deformable work piece-engaging member is disposed adjacent the force-bearing surface for receiving a work piece thereagainst. The work piece-engaging member is positioned for movement with the force-bearing surface. In another aspect, a yieldable surface is provided on the body and has a central area and a peripheral area outward of the central area. One of the central and peripheral areas is movable, relative to the other of the areas to provide both inwardly and outwardly flexed surface configurations.

Abstract: The fabrication of integrated circuits entails the repeated application of many basic processing steps, for instance, planarization—the process of making a surface flat, or planar. One specific technique for making surfaces flat is chemical-mechanical planarization, which typically entails applying slurry onto a surface of an integrated circuit and polishing the surface with a rotating polishing head. The head includes several holes, known as slurry dispensers, through which slurry is applied to the surface. After completion of a polishing operation, gas is forced through the slurry dispensers to separate the surface from the rotating head. Unfortunately, the gas dries slurry remaining on the surface, causing slurry particles to stick to the polished surface, which ultimately cause defects in integrated circuits.

Abstract: A polishing system comprising one or more magnetic units able to produce a magnetic field is provided. The magnetic units may cause a polishing material to become plasticized and the plasticized material is able to polish a surface of a work piece. The polishing material may intermittently and repeatedly contact with the surface for polishing.

Abstract: A resilient pneumatic annular sealing bladder is coupled for fluid communication to a first pressurized pneumatic fluid to define a first pneumatic zone and is attached to a first surface of the wafer stop plate adjacent the retaining ring interior cylindrical surface to receive the wafer and to support the wafer at a peripheral edge. The resilient pneumatic annular sealing bladder defines a second pneumatic zone radially interior to the first pneumatic zone and extends between the first surface of the wafer stop plate and the wafer when the wafer is attached to the polishing head during a polishing operation and is coupled for fluid communication to a second pressurized pneumatic fluid. The wafer attachment stop plate is operative during non polishing periods to prevent the wafer from flexing excessively from an applied vacuum force used to hold the wafer to the polishing head during wafer loading and unloading operations.

Abstract: An optical system is disclosed for the inspection of wafers during polishing which also includes a measurement system for measuring the thickness of the wafer's top layer. The optical system views the wafer through a window and includes a gripping system, which places the wafer in a predetermined viewing location while maintaining the patterned surface completely under water. The optical system also includes a pull-down unit for pulling the measurement system slightly below the horizontal prior to the measurement and returns the measuring system to the horizontal afterwards.

Abstract: A method is described for temperature endpointing of a CMP process. A temperature sensor (110) detects temperature changes when the CMP polishing process transitions between different materials.

Abstract: A honing head for microburnishing surface of a recording/reproducing disc to a smoothness at which asperities are limited to submicron heights including a hardened contact bearing surface having an array of depressions with abrupt trailing edges interconnected by recessed channels leading outwardly from the honing head. The array of channels span a band in which an asperity may be present, and the sharp edges shear off the asperities within the band which extend above the chosen submicroinch height, with the separated particulates being passed through the recesses and channel system to the outer edge of the honing head. The trailing edges act to shear off the unwanted heights of the asperities, while the recesses enable pressure differentials and air flows to direct the separated particulates outwardly relative to the disc, centripetal forces of rotation bearing the particulates from the disc.

Abstract: There is provided a polishing apparatus comprising an attitude controller for controlling an attitude or orientation of a turntable having a polishing surface and/or a carrier for holding an article to be polished in a sliding contact relation with the polishing surface. The turntable and carrier are connected to their drive shafts through universal joints. The attitude controllers control angles of tilting of the turntable and the carrier relative to their drive shafts.

Abstract: A modified plating solution that can be used to electroplate a high quality conductive material that can be effectively polished and planarized includes (1) a solvent, (2) an ionic species of the conductive material to be deposited, (3) at least one additive to improve electrical and structural properties, and (4) a modifying agent.

Abstract: A method and apparatus for cleaning a surface of a microelectronic substrate. In one embodiment, the apparatus can include a support member having a manifold in fluid communication with a source of liquid and in fluid communication with at least one exit aperture. A porous brush member can be coupled to the support member such that a contact portion of the brush is positioned against the exit aperture to receive liquid directly from the exit aperture. The liquid can flow from the exit aperture through the contact member and to the surface of the microelectronic substrate to keep the contact portion moist. The contact portion can be moistened as it cleans the microelectronic substrate or between cleaning cycles. The liquid can also be supplied to the contact portion at a rate sufficient to remove particulates and other contaminants from a porous outer surface of the contact portion.

Abstract: A method and apparatus for removing conductive material from a microelectronic substrate. In one embodiment, the method can include engaging a microelectronic substrate with a polishing surface of a polishing pad, electrically coupling a conductive material of the microelectronic substrate to a source of electrical potential, and oxidizing at least a portion of the conductive material by passing an electrical current through the conductive material from the source of electrical potential. For example, the method can include positioning first and second electrodes apart from a face surface of the microelectronic substrate and disposing an electrolytic fluid between the face surface and the electrodes with the electrodes in fluid communication with the electrolytic fluid. The method can further include removing the portion of conductive material from the microelectronic substrate by moving at least one of the microelectronic and the polishing pad relative to the other.

Abstract: The present invention is directed to the field of semiconductor processing and, more particularly, to a method of planarizing or polishing process layers formed above a surface of a semiconducting substrate. In one illustrative embodiment, the method comprises determining the thickness of a process layer formed above a semiconducting substrate and determining a polishing recipe for said process layer based upon the measured thickness of said process layer.

Abstract: Magnetic recording media-are provided having separately textured data and read/write head landing zones. Separating these zones on the recording surface allows independent optimization of the topology to maximize both recording characteristics and mechanical durability. The landing or contact start stop zone has an average surface roughness greater than that of the data zone. Preferably, a transition zone extends between the contact start stop zone and the data zone, the transition zone varying between the two in average surface roughness. Preferably, the contact start stop zone is textured first, followed by the data zone, thereby ensuring uniform stiction performance. Texture machines for producing such zone texturing and texturing methods are also provided.

Abstract: The process describes how transmission gears (6) can be manufactured in a highly economical and highly precise manner. In one single mounting, the complete hard fine-machining on all of the most important functional surfaces of the workpiece is conducted simultaneously. This multi-process is made possible through the combined use of a continuous generating grinding process for the machining of gearing, a known method for the machining of the boring and possibly of a frontal surface, and the fixing of workpieces (6) on form elements such as chamfers or plane surfaces by means of centering elements (9, 10) which are designed in such a way that they do not block the free access of the individual tools (5, 11, 28) to the surfaces (7, 8, 27) to be machined.

Abstract: A workpiece such as a semiconductor wafer is polished by pressing the workpiece against a polishing surface under a predetermined pressure. A polished surface of the workpiece is processed by pressing the workpiece against a processing surface under a predetermined pressure while the processing surface makes circulatory translational motion along a predetermined path. The processing surface comprises a surface of a polishing cloth or a surface of an abrading plate, and the polished surface of the workpiece is further polished or cleaned.

Abstract: An apparatus for chemimechanically polishing a substrate by the steps of causing a chuck to hold the substrate having a metal film or devices such that the surface of a metal film or an insulating film of the substrate is caused to face upwards, pressing the surface of a polishing pad bonded to a joining plate pivotally borne by a spindle shaft having the axis arranged to be perpendicular to the substrate on the surface of the substrate, while supplying polishing solution to a boundary between the surfaces of the pad and the substrate, rotating the chuck holding the substrate and the polishing pad, and reciprocating the polishing pad horizontally on the surface of the substrate so that at least a portion of the metal film or the insulating film is removed.

Abstract: A method for chemical-mechanical polishing of a layer that is deposited on a surface of an integrated circuit substrate is described. The method includes: (1) immobilizing the integrated circuit substrate using a substrate holder such that the integrated circuit substrate surface is positioned against a surface of a polishing pad, which is mounted on a supporting surface; (2) a first stage of polishing the substrate surface including maintaining a predetermined difference between the rotational velocity of the polishing pad and the rotational velocity of the substrate holder allowing an endpoint of the chemical-mechanical polishing process of the layer to be detected; and (3) a second stage of polishing the substrate such that the rotational velocity of the polishing pad and the rotational velocity of the substrate holder are substantially the same to produce a substantially planar substrate surface.

Abstract: The present invention provides an infrared spectroscopic method of removing a first layer from a semiconductor wafer without overpolishing the underlying second layer. The first layer and the second layer of the semiconductor wafer is subjected to infrared (IR) spectroscopy and an absorbance curve is produced, whereby each layer absorbs IR light at different wavenumbers to produce different absorbance peaks. Once the CMP process is performed, a change in the IR absorptivity and thus the absorbance peak of each layer is detected. The endpoint of the CMP process is determined at a point when significant change in the IR absorptivity of the first layer is no longer detected and change in the IR absorptivity of the second layer occurs.

Abstract: A method and apparatus for planarizing a microelectronic substrate. In one embodiment, the apparatus can include an elongated, non-continuous polishing pad oriented at an angle relative to the horizontal to allow planarizing liquids and materials removed from the microelectronic substrate to flow off the polishing pad under the force of gravity. Two such polishing pads can be positioned opposite each other in a vertical orientation and can share either a common platen or a common substrate carrier. The polishing pads can be pre-attached to both a supply roll and a take-up roll to form a cartridge which can be easily removed from the apparatus and replaced with another cartridge.

Abstract: An apparatus for preparing a semiconductor wafer is provided. The apparatus includes a pair of drive rollers disposed so as to support a semiconductor wafer in a substantially vertical orientation. Each of the drive rollers is configured to be coupled to a drive belt for rotating the drive rollers. The apparatus further includes a pair of wafer preparation assemblies that is movably disposed in an opposing relationship. Each of the wafer preparation assemblies have a first wafer preparation member and a second wafer preparation member. The wafer preparation assemblies being movable into a first position in which each of the first wafer preparation members is positioned to perform a first wafer preparation operation on the wafer and into a second position in which each of the second wafer preparation members is positioned to perform a second wafer preparation operation on the wafer.

Abstract: Method and apparatus for chemically mechanically polishing semiconductor substrates with enhanced durability, reliability and polishing effectiveness. In the method of the present invention, the substrate and the pad respectively orbits to guarantee uniform polishing across the substrate in principle. The apparatus of the present invention employing the above method is mechanically stable to enhance process reliability.