Abstract: An apparatus for simultaneously polishing wafers including at least a first and a second web of polishing media. At least two polishing heads are provided on a carrier coupled to a drive system such that one polishing head positions a wafer against the first web and a second polishing head positions a second wafer against the second web. The drive system imparts a programmed polishing motion or pattern to the polishing heads.

Abstract: A polishing pad for use in polishing a surface of a substrate comprises a pad main body having a polishing surface and a plurality of electrode portions formed within the pad main body and mutually spaced apart in a plane direction of the pad main body. Each electrode portion is formed of a conductive portion and an insulating portion formed on the conductive portion.

Abstract: In a chemical mechanical polishing apparatus in accordance with the present invention, a material having a hardness defined by JIS standard K6301 (A type) of 10-40 and a thickness of 5-30 mm is used as an elastic member (16) arranged between a polishing pad (12) and a platen (36). Therefore, both flatness and uniformity of a wafer can be sufficiently improved.

Abstract: This invention features a disc refacing system, comprising a rotatable platter for holding a disc thereon, a grinding pad assembly, and a polishing pad assembly. Each pad assembly can be rotated at high speed. Each pad assembly can be alternately engaged with the disc on the platter. The platter and a pad assembly can be alternately engaged and disengaged, to allow a disc to be loaded and unloaded from the platter. There is a source of grinding compound, which can be applied to the grinding pad assembly.

Abstract: A sanding machine includes a conveyer and a sanding assembly for sanding a workpiece by moving the sanding assembly in multiple linear and/or nonlinear motions relative to the conveyed workpiece.

Abstract: A flexible, open-pored cleaning body having at least one scouring surface (2) provided in at least one subregion with continuously formed, raised projecting ridges (3), wherein the ridges (3) have regions C,D of different heights in the direction of their extension.

Abstract: The present invention provides a dual purpose workpiece handoff station for intermediately staging a semiconductor wafer, or other workpiece, being transferred between processing stations in, for example, a Chemical-Mechanical Planarization (CMP) machine. The handoff station includes a workpiece processing surface; such as a polishing pad or buffing pad, defining a plurality of apertures for applying fluids, including water, chemicals, slurry, or vacuum, to the surface of a workpiece. In operation, a workpiece carrier moves a polished wafer from a primary polishing surface to the handoff station, and polishes, buffs, or cleans the wafer in the handoff station by rotating the wafer and oscillating the wafer across the handoff station polishing surface while pressing the wafer thereon.

Abstract: A method and apparatus for deburring nonmetallic machined workpieces. A deburring material of sufficient frictional engagement and hardness to debur nonmetallic workpieces without causing scarring thereto is rubbed against a workpiece to effect deburring. The deburring material has a durometer hardness and a coefficient of friction whereby frictional engagement of a burr with the deburring material is stronger than the attachment of the burr to the workpiece and therefore the burr is removed as the deburring material is actuated and brought into contact with the burr. The deburring material can be, e.g., polyisoprene and may be mechanically actuated or actuated by hand.

Abstract: A polishing apparatus includes a table on which a polishing target member is placed, and at least one nozzle which sprays a polishing solution to a surface of the polishing target member so as to form, by polishing, the surface of the polishing target member. The nozzle and the polishing target member move relative to each other, and an angle of the nozzle is changeable.

Abstract: A multi-platen chemical-mechanical polishing system is used to polish a wafer. The wafer is polished at a first station. During polishing, an endpoint is detected. The endpoint is detected by generating optical radiation by a first light source. The first optical radiation travels through a translucent area in a surface of a first platen and travels through a first polishing pad. After being reflected by the wafer, the optical radiation returns through the first polishing pad through the translucent window to a first optical radiation detector. The first polishing pad has a uniform surface in that no part of the surface of the first polishing pad includes transparent material through which non-scattered optical radiation originating from the first light source can pass and be detected by the first optical radiation detector. Optical radiation that travels through the first polishing pad and is detected by the first optical radiation detector is haze scattered by inclusions within the first polishing pad.

Abstract: The present invention discloses an apparatus for grinding a liquid crystal cell including a power unit; a first axis receiving a rotational motion from the power unit; a second axis extending from the first axis and rotating along with the first axis; a first grinding wheel having a first grinding surface and being arranged between the first and second axes, the first grinding surface having a first inclined angle; and a second grinding wheel having second and third grinding surfaces and being arranged at a terminal portion of the second axis, the second grinding surface having a second inclined angle, and the third grinding surface having a third inclined angle.

Abstract: An apparatus for grinding a glass base material having a core and a clad comprising: a grinding wheel for grinding the clad; a measuring unit for measuring an eccentricity between a center position of the glass base material and a center position of the core at a plurality of positions along a longitudinal direction of the glass base material; a design unit for calculating target diameters substantially continuous throughout the longitudinal direction of the glass base material so that the eccentricity becomes substantially zero for each of the plurality of positions; and a control unit for controlling the grinding wheel to grind the clad so that a diameter of the glass base material to be the target diameter substantially continuous throughout the longitudinal direction of the glass base material based on the target diameters calculated by the design unit.

Abstract: A chemical mechanical planarization system for planarizing wafers is provided. The system generally includes a transfer corridor, at least one corridor robot, one or more polishing modules and at least one loading device. The corridor robot is disposed in the transfer corridor and is positionable between a first end and a second end of the transfer corridor. The loading device is adapted to transfer workpieces between the transfer corridor and the polishing modules. Generally, the loading device includes at least one load cup. The one or more polishing modules each include one or more polishing heads for holding workpieces during processing.

Abstract: Generally, a method and system for lifting a web of polishing material is provided. In one embodiment, the system includes a platen that has a first lift member disposed adjacent to a first side and a second lift member disposed adjacent to a second side. The platen is adapted to support the web of polishing media that is disposed between the first and the second lift members. A method includes supporting a web of polishing media on a platen between a first lift member and a second lift member and moving at least the first lift member or the second lift member to an extended position relative the platen that places the web in a spaced-apart relation with the platen.

Abstract: A method and apparatus for thermally attaching web-based polishing pads in a chemical-mechanical planarization (CMP) system. Specifically, one end of a first web-based polishing pad and an end of a second web-based polishing pad are inserted in a thermal sealing unit. The ends of the polishing pads are brought into contact with each other and secured in place within the thermal sealing unit. A heating element within thermal sealing unit is activated, thereby fusing the polishing pads.

Abstract: There is disclosed a method for polishing a work wherein polishing liquid is supplied to a polishing pad, and a relative movement is carried out between the work and the polishing pad with pressing the work on the polishing pad, wherein the work of which press pressure was set to 0 to terminate polishing is released from the polishing pad within 45 seconds after the termination of polishing. When plural works are simultaneously polished, preferably only the work to which press pressure was set to 0 to terminate polishing is released from the polishing pad, and polishing of the other works is continued, which are released from the polishing pad after press pressure thereto is set 0 one by one.

Abstract: A surface finishing apparatus for in-line outer surface polishing of elongate cylindrical metal stock to apply a long scratch finish, including a stock feeder for feeding a length of stock through the finishing apparatus from an infeed downstream to an outfeed position while rotating the stock about its longitudinal axis and a polishing assembly for finish-treating the outer surface of the stock as the stock is fed through the apparatus to apply a long scratch finish thereto. The polishing assembly includes a rotatable finishing wheel having a finish-treating peripheral surface for being applied in an in-line orientation against the outer surface of the stock as the stock is simultaneously fed and rotated through the finishing apparatus.

Abstract: A method and apparatus for improving the corrosion resistance of chrome plated materials that provides for heating the chrome plated materials above the melting point of a buffing compound, and then buffing the heated materials with the buffing compound applied. An induction heater is used, before or after the buffing compound is applied. Computer controls, responsive to operator input of the cross-sectional size, composition and/or speed of movement of the chrome plated materials, to in turn regulate the power to an induction coil heater.

Abstract: An arrangement for planarizing a surface of a semiconductor wafer. The arrangement includes a planarizing member having a planarizing surface configured to be (i) positioned in contact with and (ii) moved relative to the surface of the semiconductor wafer so as to remove material from the surface of the semiconductor wafer such that the surface of the semiconductor wafer is planarized. The arrangement also includes an adherence promoting ligand chemically bonded to the planarizing surface of the planarizing member. The arrangement further includes an abrasion particle chemically bonded to the adherence promoting ligand such that the abrasion particle is attached to the planarizing surface of the planarizing member. The arrangement also includes a conditioning bar having a conditioning portion positioned in contact with a wafer track defined on the planarizing member. The conditioning portion is configured so that the conditioning portion extends completely across the wafer track.

Abstract: A multi-step polishing system, and a process for polishing a workpiece using the system. The system includes one or more polishing stations. The workpiece is polished in the presence of an oxidizer-free medium, and subsequently, the workpiece is polished in the presence of an oxidizing medium. This polishing sequence extends the life of the polishing pads and provides for a more uniform polish.

Abstract: A chemical mechanical polishing includes a first spindle operable to rotate with respect to a central axis of the first spindle. A first polishing pad is coupled with the first spindle, and the first polishing pad has a first surface extending along a plane generally perpendicular to the central axis of the first spindle. A wafer carrier is included that is adapted to receive a wafer with a second surface generally parallel to the first surface of the first polishing pad. The wafer carrier is operable to rotate with respect to a central axis of the wafer carrier. The first surface of the first polishing pad is moveable along the central axis of the first spindle from a first position, wherein the first surface is spaced from the second surface, and a second position, wherein the first surface generally contacts the second surface.

Abstract: An end face polishing apparatus with improved polishing precision regardless of the length of ferrules when end faces of the ferrules are polished is provided. In an end face polishing apparatus polishing a rod-shaped member mounted at a polishing fixture by pressing the rod-shaped member against a lapping member on a lapping machine provided on a surface plate that is supported at the main body of the apparatus to rotate and rock, there are a plurality of rod-shaped guide members provided at the polishing fixture radially outwardly projecting and a tubular member capable of supporting the polishing fixture through the guide members on the surface plate. In this way, the guide members at the polishing fixture and the tubular member abut against each other so that the movement of the polishing fixture in the pressing direction is restricted.

Abstract: The center of a turntable 30 moves around the central axial line of an autoroation disk 20 along the circular orbit C of a smaller diameter than that of an autorotation disk 20. Thus, the turntable 30 revolves both around a center point O and on its own axis in accordance with an autorotation of the autorotation disk 20. A polishing holder 60 holds a connector of an optical fiber polished by a polishing film 41 arranged on the upper plane of the turntable 30. An optical fiber end face polishing machine provided with a memory 85 for storing a control program which allows a control device 80 to execute predetermined polishing steps, the control device 80 being for controlling an autorotation motor 16 of the turntable 30 and a revolution motor 14 thereof.

Abstract: A method and apparatus for endpointing a planarization process of a microelectronic substrate. In one embodiment, the apparatus may include a species analyzer that receives a slurry resulting from the planarization process and analyzes the slurry to determine the presence of an endpointing material implanted beneath the surface of the microelectronic substrate. The species analyzer may include a mass spectrometer or a spectrum analyzer. In another embodiment, the apparatus may include a radiation source that directs impinging radiation toward the microelectronic substrate, exciting atoms of the substrate, which in turn produce an emitted radiation. A radiation detector is positioned proximate to the substrate to receive the emitted radiation and determine the endpoint by determining the intensity of the radiation emitted by the endpointing material.

Abstract: The invention proposes a device for grinding or polishing workpieces by means of an abrasive, having a container and a rotary disk located therein and rotatable relative thereto, in which the rotary disk is made from elastic material, is provided with an upwardly directed rim and said rim has a finite spacing from the adjacent inner wall of the container.

Abstract: A wafer polishing apparatus according to this invention has a polishing unit that includes three platens and two polishing heads. Injection ports are disposed between the platens. The two polishing heads can linearly move between the platens. In a two-step polishing process, while the polishing head holds a wafer after polishing by a platen, the wafer is transferred to a center platen which provides different polishing characteristics. In this instance, washing water from the injection ports washes away slurry, etc, adhering to the wafer. The wafer is then carried to the center platen beyond a waiting unit and is subjected to further polishing.

Abstract: A semiconductor wafer polishing method and apparatus therefor are provided having a system housing and a robotic handling system for moving the semiconductor wafer between a belt module and a rotary module for respective linear and rotary polishing. A buff module and a cleaning module are provided in the system housing for buffing and cleaning the semiconductor wafer.

Abstract: An apparatus and method for uniformly planarizing a surface of a semiconductor wafer and accurately stopping CMP processing at a desired endpoint. In one embodiment, a planarizing machine has a platen mounted to a support structure, an underpad attached to the platen, a polishing pad attached to the underpad, and a wafer carrier assembly. The wafer carrier assembly has a chuck with a mounting cavity in which the wafer may be mounted, and the wafer carrier assembly moves the chuck to engage a front face of the wafer with the planarizing surface of the polishing pad. The chuck and/or the platen moves with respect to the other to impart relative motion between the wafer and the polishing pad. The planarizing machine also includes a pressure sensor positioned to measure the pressure at an area of the wafer as the platen and the chuck move with respect to each other and while the wafer engages the planarizing surface of the polishing pad.

Abstract: A sharpening apparatus for sharpening the blades of a forage harvester chopper drum includes a carriage to which is mounted a grindstone carrier that holds a grindstone that is moved across the chopper drum during sharpening operation. The grindstone carrier includes an element which is mounted to the carriage for movement towards the chopper drum in order to advance the grindstone. The carrier element contains a threaded bore in which is received a threaded shaft that has a ratchet wheel fixed to it. A pawl is located in the path of movement of the ratchet wheel so as to be engaged thereby when the carriage reaches a reversal point at one side of the drum, this engagement causing the ratchet wheel to be rotated by an angular distance occupied by one tooth so that the threaded shaft causes the grindstone carrier to move axially therealong and toward the chopper drum so as to advance the grindstone.

Abstract: An electrically driven grinder for ceramic cutlery 1 has a rough machining diamond abrasive wheel 2 comprising a disc-shaped member provided with a grinding surface on its periphery and a finishing machining diamond abrasive wheel comprising a substantially disc-shaped member provided with grinding surfaces forming a V-shaped groove on its periphery, both of which are attached onto a rotary shaft coupled to a motor, as well as has a cover member provided with guide slots for directing an edge of ceramic cutlery to the grinding surfaces of the respective diamond abrasive wheels, wherein an angle &agr; defined between the grinding surfaces 32 forming the V-shaped groove of the finishing abrasive wheel and a plane orthogonal to the rotary shaft 4 is set to 10 to 20 degrees, and an angle defined between at least the guide slot 10 of the cover member 8 and a plane orthogonal to the rotary shaft s set to 12 to 18 degrees.

Abstract: This polishing apparatus permits for polishing of hard-material coated complex films that traditionally have been difficult to polish due to the hardness of the films, the fragility of the substrate, and the inherent distortion of the film. The polishing apparatus includes a rotary turn-table, a holder for a wafer having the film, a shaft connected to the center of the holder for transmitting rotation and pressure to the holder and permitting the holder to incline, an arm rotatably supporting the holder, a cylinder for applying pressure to the center of the shaft, a driving device for rotating the shaft, and at least one auxiliary shaft. The auxiliary shaft pushes peripheral points along a diameter of the holder in order to impart a swaying motion on the holder.

Abstract: The present invention is directed to improved apparatus' for dislodging and abrading cryolite encrustations from carbon anodes spent during aluminum smelting. Both the plow blade and flailing elements of the present invention are constructed and arranged to substantially conform to the shape of the spent carbon butts to facilitate rapid and efficient cleaning of the spent carbon anodes' surfaces. Systems and methods employing the substantially V-shaped plow blade extension and dual directional rotating flailing assemblies are also disclosed.

Abstract: A method and an apparatus for releasably attaching a polishing pad to a support surface under the polishing pad. In one embodiment of the invention, a polishing pad has a first surface for planarizing a substrate assembly, a second surface contacting the support surface, and an interlocking element. The support surface has a retaining member configured to engage the interlocking element on the polishing pad. The interlocking element and retaining member can be any one of several configurations, including: tongue and groove, protuberance and depression, reciprocal elongated ridges, or teeth.

Abstract: A bilateral automatic machine for machining the edges of plates of glass, stone-like and of other plate shaped materials and the like, comprising a supporting frame which has a conveyor for the plates to be machined. There are also provided an abutment shoulder and a movable shoulder for supporting abrasive grinding wheels which act on the opposite edges of the plates. The machine comprises, for each shoulder, downstream of the last grinding wheel in the direction of advancement of the plates, a sensor for detecting the dimensions of the plates being machined which drives an advancement device for the advancement of the last grinding wheel.

Abstract: A polishing member is provided in its polishing surface with a plurality of spiral grooves. The polishing surface is rotated while being slidably engaged with a semiconductor wafer to polish the wafer. During polishing, a pumping action is produced at the spiral grooves under a centrifugal force generated by rotation of the polishing member, and harmful large-diameter particles such as diamond particles from a dresser and abrasive particles in a polishing liquid can be discharged, together with the polishing liquid, through the spiral grooves toward an outer peripheral portion of the polishing member.

Abstract: An apparatus for chemical-mechanical planarization (CMP) of semiconductor wafers that allows independent micro-control of each spindle for tailored CMP performance. The present invention provides, in one embodiment, a CMP tool that includes a stationary bridge that houses a rack and pinion assembly. The rack and pinion assembly is coupled to a plurality of motor assemblies each of which is coupled to rotate a spindle. Significantly, movements of the spindles across are individually and independently controlled by the rack and pinion assembly. An advantage of the present independent spindle motion design allows optimization of the CMP process for each spindle and enables more accurate prediction of the effect of translation on CMP performance. Independent rotation and downforce capability of the present invention provides additional flexibility in terms of tuning polish rates and uniformity. Another advantage of the present invention is that a more compact enclosure for wafer isolation can be achieved.

Abstract: The present invention provides a processing method of outermost periphery edge part of silicon wafer comprising, etching the outermost periphery edge of silicon wafer by activated species gas generated in plasma. The plasma activated species gas can be generated by dissociation of, for example, sulfur hexafluoride gas in a discharge tube 8. Further, provides a processing apparatus for etching of outermost periphery edge of silicon wafer by means of plasma etching method comprising, a means to hold and rotate a silicon wafer 1, a container 5 which covers all surface of silicon wafer except a part of outermost periphery edge, a vacuum chamber 10 which contain said container and a plasma generating means 11.

Abstract: A polishing apparatus is used for polishing a plate-like workpiece, such as a semiconductor wafer or a glass substrate. The polishing apparatus has a polishing table having a polishing surface thereon, a plurality of workpiece holders each for holding a workpiece and pressing the workpiece against the polishing surface, and a dresser for dressing the polishing surface by pressing a desired position of the polishing surface.

Abstract: A method and apparatus for mechanically and/or chemical-mechanically planarizing and cleaning microelectronic substrates. In one embodiment, a processing medium for planarizing and finishing a microelectronic substrate has a planarizing section with a first body composed of a first material and a finishing section with a second body composed of a second material. The first body may have a relatively firm planarizing surface to engage the substrate, and the first body supports abrasive particles at the planarizing surface to remove material from the substrate during a planarizing cycle. The second body may have a relatively soft buffing or, finishing surface clean the abrasive particles and other matter from the substrate during a finishing cycle. The planarizing and finishing sections may be fixedly attached to a backing film, or they may be attached to one another along abutting edges with or without the backing film.

Abstract: A method of planarizing a semiconductor wafer having a polishing endpoint layer that includes a ligand is disclosed. One step of the method includes polishing a first side of the wafer in order to remove the ligand from the wafer. Another step of the method includes determining that a chelating agent has bound the ligand due to the polishing step removing the ligand of the polishing endpoint layer. The method also includes the step of terminating the polishing step in response to determining that the chelating agent has bound the ligand. A polishing system is also disclosed which detects a polishing endpoint based upon a chelating agent binding a ligand of a polishing endpoint layer of a semiconductor device.

Abstract: A polishing machine provided with a plurality of bases operative independently of each other; a plurality of abrasive pads respectively fixed to the plurality of bases and each having an abrasive surface for polishing a workpiece; and a base driving mechanism for individually operating the plurality of bases. The operations of the respective bases are individually controlled by controlling the base driving mechanism by means of a control circuit. The control circuit controls the base driving mechanism so that the workpiece is generally uniformly polished by the abrasive surfaces of the respective abrasive pads.

Abstract: A method of detecting presence of a polishing slurry on a semiconductor wafer subsequent to polishing of the wafer includes the step of adding a chemical marker to the polishing slurry. The method also includes the step of polishing a first side of the wafer in order to remove material from the wafer. In addition, the method includes the step of applying the polishing slurry to the first side of the wafer during the polishing step. Moreover, the method includes the step of ceasing the polishing step when the wafer has been polished to a predetermined level. Yet further, the method includes the step of directing incident electromagnetic radiation onto the wafer subsequent to the ceasing step. The method also includes the step of detecting a physical characteristic of resultant electromagnetic radiation which is produced in response to the incident electromagnetic radiation being directed onto the wafer.

Abstract: A method and apparatus for mechanically and/or chemical-mechanically planarizing and cleaning microelectronic substrates. In one embodiment, a processing medium for planarizing and finishing a microelectronic substrate has a planarizing section with a first body composed of a first material and a finishing section with a second body composed of a second material. The first body may have a relatively firm planarizing surface to engage the substrate, and the first body supports abrasive particles at the planarizing surface to remove material from the substrate during a planarizing cycle. The second body may have a relatively soft buffing or finishing surface clean the abrasive particles and other matter from the substrate during a finishing cycle. The planarizing and finishing sections may be fixedly attached to a backing film or they may be attached to one another along abutting edges with or without the backing film.

Abstract: An apparatus for preparing a semiconductor wafer is provided. The apparatus includes a wafer drive assembly having a pair of wafer drive rollers for rotating a semiconductor wafer in a vertical orientation. The wafer drive assembly is configured such that the wafer drive rollers are controllably movable from a first position to a second position. Also provided as part of the apparatus is a pair of wafer preparation assemblies movably disposed in an opposing relationship above the wafer drive assembly. Each of the wafer preparation assemblies has a first wafer preparation member and a second wafer preparation member. The wafer preparation assemblies being movable into a first position in which each of the first wafer preparation members is position to perform a first wafer preparation operation on the wafer and into a second position in which each of the second wafer preparation members is positioned to perform a second wafer preparation operation on the wafer.

Abstract: A process, multi-functional grinding wheel and apparatus for mirror-finishing the edge of at least one of a cut unfinished glass recording disk or a cut unfinished glass-ceramic recording disk.

Abstract: A chemical-mechanical polishing apparatus is provided with a downstream device for conditioning a web-shaped polishing pad. The device may be used to condition a glazed portion of the pad, and then the conditioned pad portion may be used again for polishing. The conditioning device is preferably arranged to apply different conditioning treatments to different portions of the glazed pad. The conditioning device may have roller segments that rotate at different speeds. Alternatively, the device may have non-cylindrical rollers that provide different rotational speeds at the pad surface, or the device may apply different pressures at different portions of the pad. The device may be arranged to provide uniform conditioning across the width of the pad. The invention is applicable to methods of planarizing semiconductor wafers. The invention may be used to condition circular pads in addition to web-shaped pads.

Abstract: A chemical mechanical polishing method and apparatus (100) includes a control mechanism (190) having control programs for operating the apparatus in accordance with the invention. The apparatus includes a memory store (192) for containing an offset distance and an additional memory store for containing a velocity profile. A polish operation is achieved either by providing a polishing path based on the offset distance. A method (FIG. 7) and system (FIG. 8) for calibrating a polishing apparatus includes iteratively selecting an offset distance, performing a polish, inspecting the resulting removal profile, and repeating until a desired characteristic in the removal profile is attained.

Abstract: An apparatus for polishing leads of a semiconductor package includes a package holder unit on which a plurality of semiconductor packages are arranged; and a polishing member that automatically polished the leads of the semiconductor package on the package holder unit. A mask may be used to cover the plurality of semiconductor packages to expose at least a part of the leads to the polishing member.

Abstract: The present invention is directed to a method and apparatus for cleaning and enhancing CMP polishing pads. According to an example embodiment of the present invention, a fluid source supplies cleaning elements to a CMP pad conditioner arrangement at pressure of about 20 PSI. A dispensing arrangement is coupled to the fluid source and is adapted to disperse the cleaning elements and to dispense the elements onto a CMP pad. The high-pressure cleaning of the CMP pad improves the ability to clean the pad over existing methods, reduces processing defects, increases the pad life, and improves the uniformity of the polish rate.

Abstract: A multi-head type polishing apparatus has a plurality of top rings for holding workpieces with respect to a single polishing table. A polishing apparatus includes a polishing table having a polishing surface, a plurality of top rings for holding workpieces and pressing the workpieces against the polishing surface, and a carousel for supporting the top rings and indexing the top rings. The polishing apparatus further includes a rotary transporter disposed in a position which can be accessed by the top rings and having a plurality of portions positioned on a predetermined circumference from a center of rotation of the rotary transporter for holding the workpieces, and a pusher for transferring the workpieces between the rotary transporter and the top rings.