Abstract: An oxide superconductor with superconduction properties being improved by effectively introducing a pinning center thereinto and its fabrication method are disclosed. The superconductor has a high-crystallinity oxide superconductor film which is formed on a substrate with a <001> direction of crystal grain being oriented almost perpendicularly to the substrate and with (100) planes of neighboring crystal grains being oriented to form an oblique angle ranging from 0 to 4 degrees or 86 to 90 degrees. The film has a multilayer structure including a plurality of high-density magnetic field trap layers stacked in almost parallel to the substrate and a low-density magnetic field trap layer sandwiched therebetween. An average grain boundary width of the high-density trap layers in a cross-section horizontal to the substrate is 80 nm or less. The width is less than an average grain boundary width of the low-density trap layer in its cross-section horizontal to the substrate.

Abstract: A superconducting device comprises a dielectric substrate, and a plane-figure type resonator pattern made of a superconductive material and formed on a first face of the dielectric substrate. The resonator pattern has a notch at least a portion of which is round.

Abstract: The fault current limiter in a cryogenic liquid heat transfer medium, employs a high temperature superconductor (HTS) element which has a high thermal resistance coating material encapsulating the high temperature superconductor to form an intermediate boundary layer between the HTS element and the heat transfer medium. The coating material has a thickness which enables it to minimize the retained heat in the HTS element during recovery from a fault condition, wherein substantially all heat transfer from the encapsulated high temperature superconductor element to the liquid cryogen heat transfer medium occurs at the nucleate boiling heat transfer rate.

Abstract: An oxide superconductor article having an oxide superconductor layer of a predetermined pattern is prepared by continuously advancing a wire having a textured surface into a deposition zone, dispensing droplets of a precursor solution to an oxide superconductor from a reservoir and the depositing droplets onto the textured surface of the wire that is introduced into the deposition zone, heating the wire or tape in the reaction zone under conditions to convert the precursor solution into an oxide superconductor; and collecting the wire after heating.

Abstract: There are provided superconducting materials (2) comprising a substrate (4); an interface layer (6) on the substrate, comprising a material of formula XwBaxCuyLtOz, and a superconducting layer (8) on the interface layer comprising a compound of formula XaBabCucOd? Also provided are methods of manufacturing superconducting materials and materials produced by these methods.

Abstract: A Bi-based oxide superconductor thin film whose c-axis is oriented parallel to the substrate and whose a-axis (or b-axis) is oriented perpendicular to the substrate, is manufactured in order to obtain a high performance layered Josephson junction using a Bi-based oxide superconductor. The method of manufacturing an a-axis oriented Bi-based oxide superconductor thin film, involves an epitaxial growth process using an LaSrAlO4 single crystal substrate of a (110) plane or a LaSrGaO4 single crystal substrate of a (110) plane, for which the lattice constant matches well with a (100) plane of a Bi-2223 oxide superconductor. By this method, rather than the normally easily obtained Bi-2212, an a-axis oriented film of Bi-2223 showing an extremely high superconductive transition temperature even for a Bi-based oxide superconductor can be selectively manufactured.

Abstract: There is provided a method of efficiently producing a superconductive material more excellent in properties, and large in area when executing thermal decomposition of a metalorganic compound, and formation of a superconductive material with heat treatment.

Abstract: A superconducting article includes a substrate having an untextured metal surface; an untextured barrier layer of La2Zr2O7 or Gd2Zr2O7 supported by and in contact with the surface of the substrate; a biaxially textured buffer layer supported by the untextured barrier layer; and a biaxially textured superconducting layer supported by the biaxially textured buffer layer. Moreover, a method of forming a buffer layer on a metal substrate includes the steps of: providing a substrate having an untextured metal surface; coating the surface of the substrate with a barrier layer precursor; converting the precursor to an untextured barrier layer; and depositing a biaxially textured buffer layer above and supported by the untextured barrier layer.

Abstract: A superconducting thin film material that can realize attainment of an excellent property such as a high JC and a high IC and reduction of costs at the same time includes an orientated metal substrate and an oxide superconductor film formed on the orientated metal substrate. The oxide superconductor film includes a physical vapor deposition HoBCO layer formed by a physical vapor deposition method, and a metal organic deposition HoBCO layer formed on the physical vapor deposition HoBCO layer by a metal organic deposition method.

Abstract: High-temperature superconductivity confined to nanometer-scale interfaces has been a long standing goal because of potential applications in electronic devices. The spontaneous formation of a superconducting interface in bilayers consisting of an insulator (La2CuO4) and a metal (La1?xSrxCuO4), neither of which is superconducting per se, is described. Depending upon the layering sequence of the bilayers, Tc may be either ˜15 K or ˜30 K. This highly robust phenomenon is confined to within 2-3 nm around the interface. After exposing the bilayer to ozone, Tc exceeds 50 K and this enhanced superconductivity is also shown to originate from a 1 to 2 unit cell thick interfacial layer. The results demonstrate that engineering artificial heterostructures provides a novel, unconventional way to fabricate stable, quasi two-dimensional high Tc phases and to significantly enhance superconducting properties in other superconductors.

Abstract: A method of continuously coating at least one substrate with a buffer layer as a support for a ceramic superconducting material is disclosed. The method includes loading the at least one substrate onto a respective feed spool and feeding the at least one substrate through a vacuum deposition chamber. The method further includes coating the at least one substrate while the at least one substrate is bombarded by ion beams from dual RF-ion sources forming at least one coated substrate, and reloading the at least one coated substrate onto a respective take up spool.

Abstract: Disclosed herein is a superconducting strip having a metal coating layer and a method of manufacturing the superconducting strip.

Abstract: A coated conductor with simplified layer architecture includes a biaxial textured substrate, a template buffer layer composed of a material having the general formula RE2?xB2+xO7 with RE being at least one lanthanoid metal, B being at least one metal selected from Zr and Hf and ?0.4?x?+0.7, where the superconductor layer is obtainable by hybrid liquid phase epitaxy and can be deposited directly onto the template buffer layer.

Abstract: A superconducting article is disclosed, including a substrate and a chemical vapor deposited thin film superconducting layer overlying the substrate, the superconducting layer having a critical current not less than about 100 A/cm width at 77K and self field. The superconducting article may be a tape, multiple tapes, or a power device, such as a power cable, power generator, or power transformer. Also disclosed are methods for manufacturing same and methods for using same.

Abstract: Superconducting connections are provided to internal layers of a multi-layer circuit board structure, for example by superconducting vias.

Abstract: This invention provides a thin superconducting oxide film, which can realize a high critical current, and a superconducting member having a high level of electric power resistance. The superconducting member comprises a sapphire R face substrate, a buffer layer formed of grain lumps of an oxide provided on the sapphire R face substrate, and a superconducting layer provided on the buffer layer. The nearest neighbor distance between oxygen atoms in the oxide and the grain diameter of grain lumps of the oxide have been specified. The superconducting member can be used as a member for superconducting filters.

Abstract: A method for making a doped magnesium diboride powder is provided. The method includes coating a polymeric precursor on at least one of a plurality of particles of a first phase, where the first phase includes a magnesium diboride powder, where the polymeric precursor includes chemical elements yielding a second phase. The second phase includes one or more of a boride, a nitride, a carbide, an oxide, an oxy-boride, an oxy-nitride, an oxy-carbide, or combinations thereof. The method further includes forming a second phase coating onto at least one of the plurality of particles of the magnesium diboride powder.

Abstract: A superconducting thin film is disclosed having columnar pinning centers utilizing nano dots, and comprising nano dots (3) which are formed insularly on a substrate (2) and three-dimensionally in shape and composed of a material other than a superconducting material and also other than a material of which the substrate is formed, columnar defects (4) composed of the superconducting material and grown on the nano dots (3), respectively, a lattice defect (6) formed on a said columnar defect (4), and a thin film of the superconducting material (5) formed in those areas on the substrate which are other than those where said columnar defects are formed.

Abstract: To provide an oxide superconductor thick film formation method that can enhance adhesiveness of a Bi2223 thick film to a body to be processed on which the Bi2223 thick film is formed, and increase a cross-sectional area of the Bi2223 thick film, without a decrease in Jc of the Bi2223 thick film. A mixture of a compound oxide having composition Bi2212 and Pb is applied to a surface of the body to be processed, and burned to form a first thick film. An oxide superconductor thick film expressed by a general formula (Bi, Pb)2+aSr2Ca2Cu3OZ (where ?0.1?a?0.5) is formed on the first thick film.

Abstract: RE superconductive layer of high critical current density (Jc) is superimposed on an interlayer formed so as to, while ensuring cracking prevention, excel in crystallinity, such as in-plane orientation degree and direction, and surface smoothness. On an oriented Ni substrate, there are sequentially superimposed an interlayer of cerium oxide loaded with 20 to 60 mol %, in terms of metal content, of one or at least two rare earth elements according to MOD technique and an RE superconductive layer of high Jc according to MOD technique. The above interlayer is formed by mixing a Gd, Y and/or Yb organometallic compound solution with a Ce organometallic compound solution, applying the mixed solution onto an oriented Ni substrate so as to form a coating film and subjecting the coating film to calcination heat treatment and thereafter firing in an Ar—H2 atmosphere at 950 to 1150° C. under a pressure of 50 to 500 Pa. YBCO superconductive layer is formed on this interlayer according to TFA-MOD technique.

Abstract: A method for producing a superconducting wire material having a high resistivity layer outside a superconducting material, which is capable of easily forming a homogeneous high resistivity layer, a superconducting wire material and a superconducting device are provided. A raw material of superconducting wire material is coated with a first silver-containing metal to obtain a silver sheath member. This silver sheath member is coated with a non-silver metal free of silver. At least a part of the first silver-containing metal in the member coated with a non-silver metal and the non-silver metal are intermetallically compounded with each other. This intermetallically compounded metal is oxidized to form a high resistivity layer. The member having a high resistivity layer formed thereon is heat-treated to convert the aforementioned raw material to a superconducting material.

Abstract: A superconducting article and a method of making a superconducting article is described. The method of forming a superconducting article includes providing a substrate, forming a buffer layer to overlie the substrate, the buffer layer including a first buffer film deposited in the presence of an ion beam assist source and having a uniaxial crystal texture. The method further includes forming a superconducting layer to overlie the buffer layer.

Abstract: A method of forming MgB2 films in-situ on a substrate includes the steps of (a) depositing boron onto a surface of the substrate in a deposition zone; (b) moving the substrate into a reaction zone containing pressurized, gaseous magnesium; (c) moving the substrate back into the deposition zone; and (d) repeating steps (a)-(c). In a preferred embodiment of the invention, the substrate is moved into and out of the deposition zone and the reaction zone using a rotatable platen.

Abstract: A metal substrate for an oxide superconducting wire, which comprises a polycrystalline metal substrate with a rolled aggregate structure having a {100} plane which is parallel to the rolled surface and a <001> axis which is parallel to the rolling direction, and an oxide crystal layer comprising an oxide of the polycrystalline metal and formed on a surface of the polycrystalline metal substrate, wherein at least 90% of grain boundaries in the oxide crystal layer have an inclination of 10° or less, and at least 90% of the {100} plane of the oxide crystal layer make an angle of 10° or less with the surface of the polycrystalline metal substrate.

Abstract: Superconductor wires or layers having improved properties and methods for making the same are described. The superconducting layer includes a rare earth element—alkaline earth element—transition metal oxide having an average stacking fault density that is greater than about 0.01 nm?1, wherein two or more rare earth cations form the rare earth element. To form the superconductor layer of the present invention, a layer having a rare earth element—alkaline earth element—transition metal oxide substantially in a first crystal structure can be provided to a substrate where two or more rare earth cations form the rare earth element. The layer can then be heated at a temperature that is greater than 550° C. under oxidizing conditions to form a high-temperature superconducting layer substantially in a second crystal structure.

Abstract: A CVD apparatus capable of substantially simultaneously processing multiple portions of at least one substrate or substantially simultaneously processing portions of multiple substrates or substantially simultaneously processing multiple portions of at least one substrate and portions of multiple substrates, the CVD apparatus is described. The CVD apparatus includes a reactor, at least one substrate heater, at least one precursor supply system, at least one precursor injector, optionally, communicating with at least one temperature regulated manifold, at least one reactants mixer, and, optionally, at least one controller communicating with at least one substrate heater, the at least one precursor supply system, the at least one precursor injector, the at least one temperature regulated manifold, and combinations thereof.

Abstract: A method for preparing film oxides deposited on a substrate with a resulting grain boundary junction that is atomistically straight. A bicrystal substrate having a straight grain boundary is prepared as a template. The Miller indices h1, k1, h2, k2 of the two grains of the substrate are chosen such that the misorientation angle of the film is equal to arctan k1/h1+arctan k2/h2. The film is grown on the substrate using a layer-by-layer growth mode.

Abstract: The present invention relates to a method for fabricating a filament type high-temperature superconducting wire in which a thin film type high-temperature superconducting wire is fabricated into a filament shape suitable for use with alternating current.

Abstract: The present invention relates to a method of preparing an oxide superconducting film, the method includes reacting a metal acetate containing metal M selected from the group consisting of lanthanum, neodymium and samarium with fluorocarboxylic acid having not less than three carbon atoms, reacting barium acetate with fluorocarboxylic acid having two carbon atoms, reacting copper acetate with fluorocarboxylic acid having not less than two carbon atoms, respectively, followed by refining reaction products, dissolving the reaction products in methanol such that a molar ratio of the metal M, barium and copper is 1:2:3 to prepare a coating solution, and coating a substrate with the coating solution to form a gel film, followed by calcining and firing the gel film to prepare an oxide superconducting film.

Abstract: A method for producing a superconducting inductive component having at least two plots, the component including at least one line segment incorporating at least one plot of the component, the line segment constituting a conducting or superconducting layer within a stack of alternately superconducting and insulating films.

Abstract: The present invention provides an oxide superconductor thick film which is formed on a substrate or a board and has a high Jc and Ic and a method for manufacturing the same. Predetermined amounts of materials containing elements of Bi, Pb, Sr, Ca and Cu are weighed, mixed and subjected to steps of calcining, milling, and drying, and thereafter an organic binder and an organic vehicle are added thereto to prepare a (Bi, Pb)2+aSr2Ca2Cu3O2 superconductive paste, which is applied to the surface of a substrate or a board in a thickness of 260 ?m or more and dried. Thereafter, the paste is first subjected to burning at temperatures of 835° C. to 840° C. for 100 hours, then pressurization, and further burning at temperatures of 835° C. to 840° C. for 100 hours, thereby preparing an oxide superconductor thick film having a film thickness of 130 ?m or more having a high Jc and Ic.

Abstract: A method of forming a superconducting conductor is disclosed. The method provides translating a substrate tape through a deposition chamber and along a helical path, where the helical path has multiple windings of the substrate tape and each winding of the substrate tape extends along a feed path and a return path. The method further provides depositing a HTS layer overlying the substrate tape within a deposition chamber, wherein the deposition chamber houses the substrate tape along the feed path but not the return path.

Abstract: A superconducting article includes a first superconductive segment having a nominal thickness tn1, a second superconductive segment having a nominal thickness tn2, and a joint region comprising a splice connecting the first and second superconductive segments together. The splice overlies portions of both the first and second superconductive segments along the joint region, the joint region having a thickness tjr, wherein tjr is not greater than at least one of 1.8 tn1 and 1.8 tn2.

Abstract: The invention relates to a method for metal coating the surface of high temperature superconductors with a copper-oxygen base structure. The aim of the invention is to achieve a method as above, which requires a low production complexity, serves for the production of contacts with a low electrical and/or thermal transfer resistance and which increases the stability of the metallization. Said aim is achieved whereby copper is applied to give low-ohmic contacts, and the linked achievement of a stable metallization between the HTS and the electrical and/or thermal coupling. Further advantageous effects are achieved with the method whereby the copper is applied in the form of copper alloys, in particular as copper-nickel or copper-zinc alloys. On applying the method it is furthermore of advantage for the creation of fine grained surface coatings to overlay the galvanic cell with a permanent and/or alternating magnetic field.

Abstract: The invention relates to multi-layer articles and methods of making such articles. The methods include first conditioning the surface of an underlying layer, such as a buffer layer or a superconductor layer, then disposing a layer of material on the conditioned surface. The conditioned surface can be a high quality surface. Superconductor articles formed by these methods can exhibit relatively high critical current densities.

Abstract: An article with an improved buffer layer architecture includes a substrate having a textured metal surface, and an electrically conductive lanthanum metal oxide epitaxial buffer layer on the surface of the substrate. The article can also include an epitaxial superconducting layer deposited on the epitaxial buffer layer. An epitaxial capping layer can be placed between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article includes providing a substrate with a metal surface and depositing on the metal surface a lanthanum metal oxide epitaxial buffer layer. The method can further include depositing a superconducting layer on the epitaxial buffer layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.

Abstract: A method includes forming an as-grown film of a superconductor composed of a MgB2 compound which is made by simultaneous evaporation of magnesium and boron. The as-grown film is superconductive without an annealing process to make the film superconductive. The method can be applied to fabricate an integrated circuit of the superconductor film, because a high temperature annealing process to make the as-grown film superconductive is not needed.

Abstract: A method involves sheathing a superconductor with a thermoplastic insulation material on all sides. The conductor exits a guide channel that extends in the propulsion direction. A melt hose is extruded from the molten insulation material in the propulsion direction and through a nozzle that has an outlet which embraces the conductor, whereby a distance is kept on all sides. The melt hose is stretched via the propulsion of the conductor. The hose is drawn to the surface of the conductor and is compacted by cooling. The method can especially be used for sheathing band-shaped high-Tc-superconductors. Materials having processing temperatures between 200° C. and 450° C., are selected as thermoplastic insulation materials.

Abstract: The aim of the invention is to provide a metal strip for epitaxial coating with a biaxially textured layer, this metal strip, however, being able to be produced in an uncomplicated manner and having a high tensile strength, low magnetic losses and/or a high electrical conductivity. According to the invention, the metal strip is comprised of Nj, Cu, Ag or alloys thereof all serving as basic material, whereby the one-layer metal strip and, in the instance of a multilayer metal strip, at least one of its layers contains 10 nm to 5 ?m large, strength-increasing dispersoids comprised of carbides, borides, oxides and/or nitrides with a volume proportion ranging from 0.1 to 5%. In the instance of a multilayer metal strip, the layers form a composite, and at least one of the layers does not contain any dispersoids and has a biaxial texture. For the production, a starting material is used, which is comprised of Ni, Cu, Ag or of alloys thereof all serving as basic material and which contains 0.

Abstract: A superconductor article includes a substrate and a first buffer film disposed on the substrate. The first buffer film has a uniaxial crystal texture characterized (i) texture in a first crystallographic direction that extends out-of-plane of the first buffer film with no significant texture in a second direction that extends in-plane of the first buffer film, or (ii) texture in a first crystallographic direction that extends in-plane of the first buffer film with no significant texture in a second direction that extends out-of-plane of the first buffer film. A second buffer film is disposed on the first buffer film, the second buffer film having a biaxial crystal texture. A superconductor layer can be disposed on the second buffer film. Ion-beam assisted deposition (IBAD) can be used to deposit the second buffer film.

Abstract: The present invention provides methods forming the superconductor of as-grown film of MgB2 which is made with magnesium and boron ejected from a magnesium target and a boron target, respectively, each in simultaneously sputtering process. The as-grown film composed of a compound of magnesium and boron is a superconductor without being annealed. The present invention can be applied to fabricate an integrated circuit of superconductor film, because the high temperature annealing process for the as-grown film of MgB2 is unnecessary.

Abstract: An aqueous solution of mixed metal acetate including one kind or more of element selected from lanthanide series and yttrium, barium and copper is mixed with trifluoroacetic acid to prepare a solution of mixed metal trifluoroacetate. From a solution of mixed metal trifluoroacetate obtained thus, purified mixed metal trifluoroacetate of which total content of water and acetic acid is 2% by weight or less is prepared. With purified mixed metal trifluoroacetate, an oxide superconductor of excellent performance may be prepared.

Abstract: Ion texturing methods and articles are disclosed.

Abstract: Methods for reducing hysteresis losses in superconductor coated ribbons where a flux distribution is set into the superconductor coated ribbon prior to the application of alternating current.

Abstract: Superconductor reactors, methods and systems are disclosed.

Abstract: A superconducting magnesium diboride (MgB2) thin film having c-axial orientation and a method and apparatus for fabricating the same are provided. The fabrication method includes forming a boron thin film on a substrate and thermally processing the substrate on which the boron thin film is formed along with a magnesium source and cooling the resulting structure. The superconducting magnesium diboride thin film can be used in a variety of electronic devices employing superconducting thin films, such as precision medical diagnosis equipment using superconducting quantum interface devices (SQUIDs) capable of sensing weak magnetic fields, microwave communications equipment used for satellite communications, and Josephson devices. Computer systems with 100 times greater computing speed can be implemented with the superconducting magnesium diboride thin film.

Abstract: The present invention is a method of forming thick films of crystalline YBa2Cu3O7 that includes forming a precursor film comprising barium fluoride (BaF2), yttrium (Y) and copper (Cu). The precursor film is heat-treated at a temperature above 500° C. in the presence of oxygen, nitrogen and water vapor at sub-atmospheric pressure to form a crystalline structure. The crystalline structure is then annealed at about 500° C. in the presence of oxygen to form the crystalline YBa2Cu3O7 film. The YBa2Cu3O7 film formed by this method has a resistivity of from about 100 to about 600 &mgr;Ohm-cm at room temperature and a critical current density measured at 77 K in a magnetic field of 1 Tesla of about 1.0×105 Ampere per square centimeter (0.1 MA/cm2) or greater.

Abstract: Proposed are a selective reduction type high temperature superconductor and methods of making the same, the superconductor having a pair of charge supply layers each formed of a Cu1-xMx surface (1, 1), a first superconducting layer formed of a 5-coordination CuO2 surface (2) and a second superconducting layer formed of a 4-coordination CuO2 surface (3). Reducing M ions (e.g., Tl ions) in the charge supply layers by heat treatment in a reducing atmosphere enables the 5-coordination CuO2 surface (2) as the first superconducting layer to be over-doped and the 4-coordination CuO2 surface (3) as the second superconducting layer to be optimum-doped. According to the present invention, a high temperature superconductor is provided that with its critical temperature held high has a reduced superconducting anisotropy &ggr;, and provides a high critical current density Jc and a high c irreversibility field Hirr.

Abstract: The present invention relates to a method for the manufacture of a high temperature-superconducting layer on a substrate (1a, 1b) comprising the steps of depositing an RBa2Cu3O7-layer (2) with a low growth rate, wherein R represents yttrium, an element of the group of rare-earth elements (atomic number 57 to 71) or mixtures of two or more of these elements, and the deposition of an XBa2Cu3O7-layer (3) onto the RBa2Cu3O7-layer (2) with high growth rate, wherein X represents yttrium, an element of the group of rare-earth elements (atomic number 57-71) or mixtures of two or more of these elements. Preferably, the low growth rate is <1 nm/s and the high growth rate is >1 nm/s, preferably >2 nm/s and the RBa2Cu3O7-layer (2) is preferably deposited onto an at least biaxially textured substrate (1a) or a substrate with an at least biaxially textured buffer layer (1b).

Abstract: Manufacturing process of an electrically insulating and mechanically structuring sheath on an electric conductor which applies notably to the manufacture of superconducting magnets, wherein a ceramic precursor (4) in gel form is formed, then a coating of the conductor (2) with this precursor, and this coating is then heat treated to form the ceramic.