Abstract: Disclosed are first to sixth processes for respectively producing hafnium tetra-tertiary-butoxide, tetrakis(acetylacetonato)hafnium, tetrakis(1-methoxy-2-methyl-2-propanolato)hafnium, hafnium tetra-tertiary-amyloxide, tetrakis(3-methyl-3-pentoxy)hafnium, and tetrakis(hexafluoroacetylacetonato)hafnium. The first process includes the steps of (a) adding a compound A(OyXOnRf)m (e.g., CF3SO3H) to a crude hafnium amide Hf[N(R1)(R2)]4; (b) subjecting a product of the step (a) to a distillation under reduced pressure; (c) adding a lithium alkylamide Li(NR3R4) to a fraction obtained by the step (b); (d) subjecting a product of the step (c) to a distillation under reduced pressure; (e) adding tertiary butanol to a fraction obtained by the step (d); and (f) subjecting a product of the step (e) to a distillation under reduced pressure.

Abstract: The present invention relates to a method for producing a porous metal-organic framework material comprising the step reacting a reaction mixture in the liquid phase of at least one copper compound having at least one at least bidentate, organic compound which can bind by coordination to the copper in the presence of a nonaqueous solvent, the at least one at least bidentate, organic compound being derived from a polycarboxylic acid having at least three carboxyl groups, and the reaction proceeding at atmospheric pressure above 80° C.

Abstract: The present invention relates to compounds that selectively bind to cells undergoing perturbations and alterations of their normal plasma membrane organization, such as cells undergoing apoptosis or activated platelets. The invention further provides methods for utilizing said compounds in medical practice, for diagnostic and therapeutic purposes.

Abstract: The invention relates to soluble metal oxides and mixed metal oxides and to solutions comprising metal oxides and mixed metal oxides. The invention further relates to a process for preparing a soluble metal oxide and a soluble mixed metal oxide and additionally relates to a process for modifying the solubility of a soluble metal oxide. The metal oxides, mixed metal oxides and solutions thereof have a number of applications and in particular are suitable for use as catalysts and also as precursors for the formation of metal oxide coatings. The present invention is also suitable for coating medical devices, and can be used for coating drug cocktails to produce sustained release tablets. Similarly, the coatings may be used for the sustained release of pesticides, insecticides, dyes and fragrances. Further uses include the application of the present invention to coat the moving parts of engines and machinery.

Abstract: The thin film-forming material of the present invention comprises a bis(?-diketonato)zinc compound that is liquid at 25° C. and is suitable for forming a zinc-containing thin film. By using the thin film-forming material, a thin film can be produced with stable film-forming rate or stable film composition control without suffering from problems of raw material gas suppliability and in-line raw material transport. Preferred (?-diketonato)zinc compounds are bis(octane-2,4-dionato)zinc and bis(2,2dimethyl-6-ethyldecane-3,5-dionato) zinc.

Abstract: This invention relates to various phosphine oxides and their use in applications which exploit the triboluminescent effect.

Abstract: This invention relates to organometallic precursor compounds represented by the formula (L)M(L?)2(NO) wherein M is a Group 6 metal, L is a substituted or unsubstituted anionic ligand and L? is the same or different and is a ? acceptor ligand, a process for producing the organometallic precursor compounds, and a method for producing a film, coating or powder from the organometallic precursor compounds.

Abstract: The invention concerns novel copper or silver complexes and their use for gas-phase chemical deposition of metal copper or silver almost free of impurities.

Abstract: A class of organic metal complexes with mixed ligands for organic light emitting diodes are designed and characterized as the formula:(L2L3M)n. In this formula: L2 is a bidentate ligand which has at least one coordinate atom of oxygen; L3 is a tridentate ligand with three chelate points; M is trivalent metal selected from the group consisting of Al, Ga, In, Tl, and Ir; and n is an integer of from 1 to 2. In Formula (3), X, Y independently represent CH or N and II, III are unsubstituted or substituted aryl or heteroalkyl groups. The substituent groups can be alkyl having 1–8 carbon atoms, halogen, cyano, amino, amido, sulfonyl, carbonyl, aryl, or heteroalkyl groups such as furan, thiophene, pyrrole, pyridine, etc.

Abstract: Triboluminescent materials comprising M wherein M is chosen from Tb, Eu, Sm, Dy and from 75% to 99.99% of M is replaced by Y, Gd, La or Lu.

Abstract: A composition suitable for use as a catalyst for the reaction of an isocyanate compound or prepolymer thereof with an alcohol to form a polyurethane comprises a mixture of (a)an organometallic compound selected from: (i) a compound of formula M(RO)4, where M is titanium, zirconium, hafnium, aluminium, cobalt or iron or a mixture of these metals and OR is the residue of an alcohol ROH in which R comprises an (optionally substituted) C1-30 cyclic, branched or linear, alkyl, alkenyl, aryl or alkyl-aryl group or a mixture thereof, or; (ii) a complex of titanium, zirconium and/or hafnium and an acetoacetate ester and (b) a coordinating compound selected from a ketone, aldhehyde, carboxylic acid, sulphonic acid, nitride or an imine. An isocyanate composition containing a catalyst of the claimed composition is also described.

Abstract: A series of noble metal organometallic complexes of the general formula (I): MLaXb(FBC)c, wherein M is a noble metal such as iridium, ruthenium or osmium, and L is a neutral ligand such as carbonyl, alkene or diene; X is an anionic ligand such as chloride, bromide, iodide and trifluoroacetate group; and FBC is a fluorinated bidentate chelate ligand such as beta diketonate, beta-ketoiminate, amino-alcoholate and amino-alcoholate ligand, wherein a is an integer of from zero (0) to three (3), b is an integer of from zero (0) to one (1) and c is an 10 integer of from one (1) to three (3). The resulting noble metal complexes possess enhanced volatility and thermal stability characteristics, and are suitable for chemical vapor deposition(CVD) applications. The corresponding noble metal complex is formed by treatment of the FBC ligand with a less volatile metal halide.

Abstract: A process for solubilizing an organometallic compound in a fluorinated solvent to form an organometallic solution by adding and reacting a co-solubilizer having a partly fluorinated polymer, an organometallic compound, and a fluorinated solvent, and the co-solubilizer has the ability to cause the organometallic compound to become miscible in a fluorinated solvent, and further, the co-solubilizer is not a catalyst and is present in the final organometallic solution.

Abstract: Chemical vapor deposition (CVD) precursor compositions for forming metal oxide high dielectric constant (?) thin films. The precursor composition in one embodiment comprises a metal precursor having a general formula M(?-diketonate)2(OR)2, wherein M is Hf, Zr or Ti, and R is t-butyl. The precursor composition may also comprise a solvent medium selected from the group consisting of ethers, glymes, tetraglymes, amines, polyamines, alcohols, glycols, aliphatic hydrocarbon solvents, aromatic hydrocarbon solvents, cyclic ethers, and compatible combinations of two or more of the foregoing.

Abstract: Copper-containing thin films can be industrially advantageously formed by chemical vapor deposition using as the copper source a divalent copper complex bearing ?-diketonato ligands having silyl ether linkage. A representative example of the divalent copper complex is represented by the formula (I): wherein Z is hydrogen or alkyl; X is a group represented by the formula (I—I), in which Ra is alkylene, and each of Rb, Rc and Rd is alkyl; and Y is an alkyl group or a group represented by the formula (I—I), in which Ra is alkylene, and each of Rb, Rc and Rd is alkyl.

Abstract: The organozirconium composite of the present invention has a decomposition temperature which is near the respective decomposition temperatures of an organolead compound and an organotitanium compound. The raw material solution can precisely control the composition of a PZT thin film over a broad temperature range. The raw material solution is less likely to react an organolead compound even when mixed with the organolead compound. The present invention provides a raw material solution which is less likely to cause vapor phase cracking.

Abstract: The present invention is generally directed to electroluminescent Ir(III) compounds, the substituted 2-phenylpyridines, phenylpyrimidines, and phenylquinolines that are used to make the Ir(III) compounds, and devices that are made with the Ir(III) compounds.

Abstract: The present invention is generally directed to electroluminescent Ir(III) compounds, the substituted 2-phenylpyridines, phenylpyrimidines, and phenylquinolines that are used to make the Ir(III) compounds, and devices that are made with the Ir(III) compounds.

Abstract: Disclosed is a process for forming an organometallic cyclometallated iridium compound comprising reacting an iridium halide complex with a silver salt and excess organic cyclometallating ligand in a diol solvent. The process provides better yields and control of desired isomers.

Abstract: The invention relates to a process for synthesizing an ionic metal complex represented by the general formula (1) or (5). This process includes reacting in an organic solvent a compound (corresponding to ligand of the complex) represented by the general formula (2) or (6) with a halogen-containing compound represented by the general formula (3) or (4), in the presence of a reaction aid containing an element selected from the group consisting of elements of groups 1-4 and 11-14 of the periodic table. It is possible by this process to easily and efficiently synthesize the ionic metal complex, which can be used as a supporting electrolyte for electrochemical devices, a polymerization catalyst of polyolefins and so forth, or a catalyst for organic synthesis.

Abstract: This invention relates to copper(+1)(?-diketonate)(L) and related copper complexes such as copper (+1)(?-ketoiminate)(L) represented by the formula: wherein X represents O or NR9, R1 and R3 are each independently comprised of the group C1-8 alkyl, C1-8 fluoroalkyl, aryl, C1-8 alkoxy, and C1-8 alkyl ethers and R2 is H, C1-8 alkyl, C1-8 alkoxy, and halogen, R9 is C1-8 alkyl, C1-8 fluoroalkyl, phenyl, alkylphenyl, trialkylsilyl, and L represents a ligand having the structure: (R4)(R5)C?(R6)(R7) or R4—C?C—R7 wherein R4, is comprised of the group C1-8 alkanol, C1-8 alkoxyalkanol, C1-8 unsaturated alkoxyalkanol, trialkylsilanol, C1-8 aalkylamine, phenylamine; R5, R6, and R7 are comprised of the group H, C1-8 alkyl, triakylsilyl, alkoxy or phenyl.

Abstract: A method of making a 3-alkylcycloalkanol of formula 2: where RI represents a methyl or ethyl group, R2 represents hydrogen, R3 represents an ethyl, propyl, butyl, isobutyl or isoamyl group, R4 represents hydrogen and R5 represents hydrogen, or a methyl, ethyl, propyl, isobutyl or isoamyl group comprises the following steps: (1) carrying out an electrophilic substitution reaction of an alkyl group or precursor thereof, on an ortho-substituted alkylbenzene compound of formula 3: where R6 represents hydrogen, or a methyl or ethyl group; (2) hydrogenating the reaction product of step (1); (3) performing an elimination reaction on one or more reaction products of step (2) to produce one or more alkene products; and (4) hydrating the one or more alkene products of step (3) to provide a 3-alkylcycloalkanol of formula 2. The electrophilic substitution reaction of step (1) may be a Friedel-Crafts acylation, e.g. using an isopropyl ketone precursor, or a Friedel-Crafts alkylation, e.g. using an isobutyl group.

Abstract: This invention relates to various phosphine oxides and their use in applications which exploit the triboluminescent effect.

Abstract: An organic EL device is disclosed in which is placed a transparent water-capturing film comprising an easy-to-use organometallic compound illustrated by the chemical formula (1): wherein, R1, R2 and R3 are selected from the group consisting of alkyl group, aryl group, cycloalkyl group, heterocyclic group and acyl group having one carbon atom and above, and M is a trivalent metallic atom.

Abstract: An organometallic composition is described which comprises a complex of at least one orthoester of a metal having a formula M(ROAcAc)x(OR′)y in which M is selected from the group consisting of titanium, zirconium and hafnium; ROAcAc denotes an ester of an alochol ROH, in which R comprises an (optionally substituted) C1-30 cyclic, branched or linear, alkyl, alkenyl, aryl or alkyl-aryl group or a mixture thereof, with acetoacetic acid; OR′ is the residue of an alcohol R′OH in which R′ comprises an (optionally substituted) C7-30 cyclic, branched or linear, alkyl, alkenyl, aryl or alkyl-aryl group or a mixture thereof, and x and y are each in the range 1-3. The composition is useful as a curing agent for polyurethanes used in various applications.

Abstract: The present invention relates to a raw material for CVD comprising an organic iridium compound as a main component, said organic iridium compound being tris(2,4-octanedionato)iridium represented by Formula 1. Particularly preferably, the raw material for CVD consists only of the trans isomer of tris(2,4-octanedionato)iridium.

Abstract: This invention provides raw material compounds for use in CVD which contain organic ruthenium compounds as a main ingredient, the organic ruthenium compounds having two &bgr;-diketones plus one diene, one diamine or two organic ligands which are coordinated with ruthenium. In this invention, the vapor pressures of the organic ruthenium compounds are made preferable by specifying the number of the carbon atoms contained in the above &bgr;-diketones and the types of the above diene etc.

Abstract: A process of producing a strontium titanate, barium titanate or barium strontium titanate thin film by chemical vapor deposition which comprises using a titanium compound represented by formula (I): wherein R1 represents a hydrogen atom or a methyl group; and R2 and R3 each represent a methyl group or an ethyl group, or R2 and R3 are connected together to form a methylene group, a methylmethylene group or a dimethylmethylene group.

Abstract: A method of forming a film on a substrate using one or more complexes containing one or more chelating O- and/or N-donor ligands. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.

Abstract: This invention provides raw material compounds for use in CVD which contain an organic iridium compound as a main ingredient, the organic iridium compound consisting of tris(5-methyl-2,4-hexanedionato)iridium. According to the CVD which uses the above raw material compounds, a pure iridium thin film and an iridium oxide thin film of excellent morphology can be produced effectively.

Abstract: The invention comprises an organotitanium precursor formed from a &bgr;-ketoester and a titanium glycolate, and dimer precursors formed from a reaction of the above organotitanium precursor with alcohol, which are used as sources of titanium dioxide for metal-organic chemical vapor deposition (MOCVD).

Abstract: A &bgr;-diketonatocopper(I) complex which contains as a ligand (L) an allene compound and is represented by formula (2) 1

Abstract: A composition and processes for producing the composition are provided. The composition comprises titanium chelates having the formulae of TiXm(OR)4−m, TiXm(OR)(4−m)/2(OR1)(4−m)/2, and TiXm(OR1)4−m in which X is a radical derived from a chelating agent such as, for example, a diketone, a diester, a ketoester, or combinations of two or more thereof; m is a number from about 1.5 to about 2.5; each R and R1 is independently an alkyl group containing from 1 to about 10 carbon atoms per radical; and R1 differs from R. The process can comprise contacting at least one tetraalkyl titanates with a chelating agent to produce a product mixture comprising a titanium chelate and an alcohol, substantially removing the alcohol to produce an alcohol-reduced titanium chelate, optionally contacting the alcohol-reduced titanium chelate with a second, and further optionally reducing the alcohol content of the titanium.

Abstract: An indium precursor composition having utility for incorporation of indium in a microelectronic device structure, e.g., as an indium-containing film on a device substrate by bubbler or liquid delivery MOCVD techniques, or as a dopant species incorporated in a device substrate by ion implantation techniques. The precursor composition includes a precursor of the formula R1R2InL wherein: R1 and R2 may be same or different and are independently selected from C6-C10 aryl, C6-C10 fluoroaryl, C6-C10 perfluoroaryl, C1-C6 alkyl, C1-C6 fluoroalkyl, or C1-C6 perfluoroalkyl; and L is &bgr;-diketonato or carboxylate. Indium-containing metal films may be formed on a substrate, such as indium-copper metallization, and shallow junction indium ion-implanted structures may be formed in integrated circuitry, using the precursors of the invention.

Abstract: The present invention provides a CVD material compound based on an organic ruthenium compound, the organic ruthenium compound consisting of one of cis and trans isomers of tris (2,4-octa-dionato) ruthenium (III). The organic ruthenium compound which consists of cis or trans isomer can be isolated by the steps of preparing tris (2,4-octa-dionato) ruthenium (III) in any method, making the tris (2,4-octa-dionato) ruthenium (III) adsorbed on an adsorbent including alumina, bringing the adsorbent into contact with a first solvent to elute the trans isomer and then bringing the adsorbent into contact with a second solvent having a polarity higher than that of the first solvent to elute the cis isomer.

Abstract: A metal compound solution of a metal compound represented by formula (I): wherein R1, R2, and R3 are each a halogen-substituted or unsubstituted alkyl group having 1 to 8 carbon atoms which may contain an oxygen atom in its carbon chain; R4 is a straight-chain or branched alkylene group having 2 to 18 carbon atoms; M is lead, titanium or zirconium: when M is lead, l, m and n represent 0, 2 and 0, respectively; when M is titanium or zirconium, n represents 0 or 1, and l and m each represent an integer of 0 to 4 satisfying equation: 1+m+2n=4, in a cyclohexane compound represented by formula (II): wherein R5 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; and p represents 1 or 2.

Abstract: This invention relates to an improvement in a purification process for producing those liquid copper based complexes of &bgr;-diketones and, particularly the monovalent copper complexes of &bgr;-diketones, which are suited for application by chemical vapor deposition in the electronics industry. In the basic process for preparing a copper based complex, a reactive copper compound is reacted with a fluorinated &bgr;-diketonate and an organo source such as an olefinic source or one having acetylenic unsaturation. Purification is effected by contacting reaction product with a double deionized deoxygenated water source and preferably an acid/water source. An aqueous layer and an organic layer are formed with the aqueous layer containing byproducts and the organic phase containing product.

Abstract: Ferrocene anchored chiral ligands and metal complexes based on such chiral ligands useful in asymmetric catalysis are disclosed. The metal complexes according to the present invention are useful as catalysts in asymmetric reactions, such as, hydrogenation, hydride transfer, allylic alkylation, hydrosilylation, hydroboration, hydrovinylation, hydroformylation, olefin metathesis, hydrocarboxylation, isomerization, cyclopropanation, Diels-Alder reaction, Heck reaction, isomerization, Aldol reaction, Michael addition; epoxidation, kinetic resolution and [m+n] cycloaddition. The new ligands are effective for asymmetric Pd-catalyzed allylic alkylation reactions and Ag-catalyzed [3+2] cyclization of azomethine ylides.

Abstract: An organozirconium compound comprises zirconium complexed with a &bgr;-diketone compound and an alkoxy group having a branched alkyl group, and which has formula (1): wherein R is a branched alkyl group having 4 or 5 carbons; and L1, L2, and L3, the same or different from each other, are each a &bgr;-diketone compound.

Abstract: Ionic perfluorovinyl compounds and their uses as components of ionic conductors of the polymer type, of selective membranes or of catalysts. The compounds comprise at least one perfluorovinyl group and at least one group chosen from —O or one of the groups C≡N, —C(C≡N)2, —NSO2R or —C[SO2R]2 or a pentacyclic group comprising at least one N, C—C≡N, CR, CCOR or CSO2R group. The compounds and/or their polymers are of use in the preparation of ionically conducting materials, electrolytes and selective membranes.

Abstract: A method of forming a film on a substrate using one or more complexes containing one or more chelating O- and/or N-donor ligands. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.

Abstract: The subject of the present invention is the use of zinc ateylacetonate comprising at least 4.4% by weight of water as halogenated polymer stabilizer. Its subject is likewise a process for the preparation of zinc acetylacetonate monohydrate, in which a zinc oxide and/or hydroxide and acetylacetone are brought into contact, in the presence of a solvent; the said solvent being used with a quantity of between 20 and 200 parts by weight, per 100 parts by weight of acetylacetone.

Abstract: A material for chemical vapor deposition comprising a &bgr;-diketonatocopper (II) complex which is liquid at room temperature.

Abstract: A compound comprising a polyfluorinated anion and the use thereof is provided. Specifically, the present invention provides a compound comprising an anion which comprises a polyfluorinated alkoxide coordinated to a transition metal, or a Group III, IV or V element.

Abstract: Zirconium precursors for use in depositing thin films of or containing zirconium oxide using an MOCVD technique have the following general formula: Zrx(OR)yL, wherein R is an alkyl group; L is a &bgr;-diketonate group; x=1 or 2; y=2, 4 or 6; and z=1 or 2.

Abstract: There is provided a compound for the formation of a PZT film using Pb(dpm)2 where the compound has a low reactivity with Pb(dpm)2, has a thermal decomposition temperature which is lower than Zr(dpm)4 and is well soluble in a solvent such as butyl acetate and toluene. There is also provided a process for the manufacture of the compound. There is further provided a liquid composition for the formation of a PZT film using the compound. The novel compound Zr(OiPr)(dpm)3 has a sublimation pressure of 0.1 Torr/160° C. and is able to form a ZrO2 film by a CVD at 400° C. That can be prepared by the reaction of 1 mol of Zr(OiPr)4 and 3 mol of dpmH in an organic solvent followed by purifying by sublimation. A solution of Pb(dpm)2, Zr(OiPr)(dpm)3 and Ti(OiPr)2(dpm)2 dissolved in butyl acetate has a long pot life and forms a PZT film by a solution flash CVD method.

Abstract: Supported bis(phosphorus) ligands are disclosed for use in hydroformylation reactions, including the hydroformylation of olefins. Catalysts are formed when the ligands are complexed with a catalytically active metal (e.g., rhodium or iridium).

Abstract: Volatile metal complexes with &agr;-sila-&bgr;-diketonate ligands containing haloalkyl, and particularly, perfluoroalkyl, substitutents are useful as metal precursors for chemical vapor deposition processes and as nanostructured materials containing fluorous domains.

Abstract: Bis(dipivaloylmethanato)diisobutoxytitanium or bis(dipivaloylmethanato)-di(2,2-dimethyl-1-propoxytitanium per se, or as used as a raw material in a MOCVD process, as is or as a solution in an organic solvent, for example, tetrahydrofuran, produces a dielectric thin film of a fine texture having a film thickness which is proportional to the deposition time and the concentration of the solution.

Abstract: A liquid precursor is provided for the formation of metal oxide films comprising a mixture of two or more types of beta-diketonate ligands bound to one or more metals. A metal beta-diketonate compound having at least two different beta-diketonate ligands provided. For example, a liquid mixture was formed of the mixed aluminum beta-diketonates derived from two or more of the ligands 2,6-dimethyl-3,5-heptanedione; 2,7-dimethyl-3,5-heptanedione; 2,6-dimethyl-3,5-octanedione; 2,2,6-trimethyl-3,5-heptanedione; 2,8-dimethyl-4,6-nonanedione; 2,7-dimethyl-4,6-nonanedione; 2,2,7-trimethyl-3,5-octanedione; and 2,2,6-trimethyl-3,5-octanedione. Films of metal oxides are deposited from vaporized precursor mixtures of metal beta-diketonates and, optionally, oxygen or other sources of oxygen. This process may be used to deposit high-purity, transparent metal oxide films on a substrate. The liquid mixtures may also be used for spray coating, spin coating and sol-gel deposition of materials.