Abstract: A method for producing an aromatic compound polymer comprising oxidatively polymerizing one or more of aromatic compound(s) having two or more hydrogen atoms directly connected to aromatic ring(s), in the presence of an oxidizing agent, wherein the method employs a catalyst composed of a transition metal complex or a catalyst prepared from a transition metal complex and an activating agent, and said catalyst has a parameter P defined by the following formula (A) of 0.50 or more, and a parameter Eo defined by the following formula (B) of 0.

Abstract: Methods of storing a precursor which decreases the precursor decomposition rate. A vessel is provided, where the vessel has an outer surface made of a first material, and an inner surface made of a second material. The first and second materials are different. A tantalum containing precursor is placed inside the vessel, and the vessel is heated to a temperature between 60° C. and 150° C. At least part of the precursor is withdrawn from the vessel.

Abstract: Processes are provided for producing transition metal amides. In methods according to this invention, at least a halogenated transition metal and an amine are combined in a solvent to produce an intermediate composition and an alkylated metal or a Grignard reagent is added to the intermediate composition to produce the transition metal amide.

Abstract: A method for producing an aromatic compound polymer comprising oxidatively polymerizing one or more of aromatic compound(s) having two or more hydrogen atoms directly connected to aromatic ring(s), in the presence of an oxidizing agent, wherein the method employs a catalyst composed of a transition metal complex or a catalyst prepared from a transition metal complex and an activating agent, and said catalyst has a parameter P defined by the following formula (A) of 0.50 or more, and a parameter Eo defined by the following formula (B) of 0.50 [V] or more: P=Af/Ai??(A) and Eo=(Epa+Epc)/2 [V]??(B).

Abstract: Monocyclopentadienyl complexes in which the cyclopentadienyl system bears at least one unsubstituted, substituted or fused, heteroaromatic ring system bound via a specific bridge, a catalyst system comprising at least one of the monocyclopentadienyl complexes, the use of the catalyst system for the polymerization or copolymerization of olefins and a process for preparing polyolefins by polymerization or copolymerization of olefins in the presence of the catalyst system and polymers obtainable in this way.

Abstract: A coated article comprising a substrate having a plastic surface and adhered thereto an organometallic film in which the metal has f electron orbitals or is niobium is disclosed. Also disclosed are methods for applying organometallic films to substrates and the organometallic films themselves.

Abstract: An asymmetric reaction catalyst is obtained by mixing a pentavalent niobium compound and an optically active triol or tetraol having a binaphthol structure of R or s configuration, and the triol is represented by the following formula: wherein, Y is divalent hydrocarbon and R1 is a hydrogen atom, a halogen atom, a trifluoromethyl group, or an alkyl group or alkoxy group having at most 4 carbons.

Abstract: Objects of the present invention are to provide a novel niobium or tantalum complex having good vapor pressure and becoming a raw material for producing a niobium- or tantalum-containing thin film by a method such as CVD method, ALD method or the like, a method for producing the same, a metal-containing thin film using the same, and a method for producing the same. The present invention relates to producing an imide complex represented by the general formula (1) by, for example, the reaction between M1(NR1)X3(L)r (2) and an alkali metal alkoxide (3): (wherein M1 represents niobium atom or tantalum atom, R1 represents an alkyl group having from 1 to 12 carbon atoms, R2 represents an alkyl group having from 2 to 13 carbon atoms, X represents halogen atom, r is 1 when L is 1,2-dimethoxyethane ligand, r is 2 when L is pyridine ligand, and M2 represents an alkali metal), and producing a niobium- or tantalum-containing thin film by using the imide complex (1) as a raw material.

Abstract: Halogen substituted metallocene compounds are described and comprise one or more monocyclic or polycyclic ligands that are pi-bonded to the metal atom and include at least one halogen substituent directly bonded to an sp2 carbon atom at a bondable ring position of the ligand, wherein the or at least one ligand has one or more ring heteroatoms in its cyclic structure. When combined with a suitable activator, these compounds show activity in the polymerization of olefins, such as ethylene and propylene.

Abstract: Processes are provided for producing transition metal amidos and/or imidos. In methods according to this invention, at least one halogenated transition metal, an amine compound and a solvent are combined, followed by the addition of an alkylated metal or a Grignard reagent to produce the transition metal amide and/or imido.

Abstract: Tantalum compounds of Formula I hereof are disclosed, having utility as precursors for forming tantalum-containing films such as barrier layers. The tantalum compounds of Formula I may be deposited by CVD or ALD for forming semiconductor device structures including a dielectric layer, a barrier layer on the dielectric layer, and a copper metallization on the barrier layer, wherein the barrier layer includes a Ta-containing layer and sufficient carbon so that the Ta-containing layer is amorphous. According to one embodiment, the semiconductor device structure is fabricated by depositing the Ta-containing barrier layer, via CVD or ALD, from a precursor including the tantalum compound of Formula I hereof at a temperature below about 400° C. in a reducing or inert atmosphere, e.g., a gas or plasma optionally containing a reducing agent.

Abstract: A method of forming (and apparatus for forming) a tantalum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and a tantalum precursor compound that includes alkoxide ligands, for example.

Abstract: The present invention discloses the use of aromatic diamine ligands to prepare catalyst systems suitable for the oligomerization or polymerization of ethylene and alpha-olefins.

Abstract: Tantalum precursors useful in depositing tantalum nitride or tantalum oxides materials on substrates, by processes such as chemical vapor deposition and atomic layer deposition. The precursors are useful in forming tantalum-based diffusion barrier layers on microelectronic device structures featuring copper metallization and/or ferroelectric thin films.

Abstract: Tantalum compounds of Formula I hereof are disclosed, having utility as precursors for forming tantalum-containing films such as barrier layers. The tantalum compounds of Formula I may be deposited by CVD or ALD for forming semiconductor device structures including a dielectric layer, a barrier layer on the dielectric layer, and a copper metallization on the barrier layer, wherein the barrier layer includes a Ta-containing layer and sufficient carbon so that the Ta-containing layer is amorphous. According to one embodiment, the semiconductor device structure is fabricated by depositing the Ta-containing barrier layer, via CVD or ALD, from a precursor including the tantalum compound of Formula I hereof at a temperature below about 400° C. in a reducing or inert atmosphere, e.g., a gas or plasma optionally containing a reducing agent.

Abstract: A coated article comprising a substrate having a plastic surface and adhered thereto an organometallic film in which the metal has f electron orbitals or is niobium is disclosed. Also disclosed are methods for applying organometallic films to substrates and the organometallic films themselves.

Abstract: Monocyclopentadienyl complexes in which the cyclopentadienyl system bears at least one bridged keto, thioketo, imino or phosphino group, a catalyst system comprising at least one of the monocyclopentadienyl complexes and a process for preparing polyolefins by polymerization or copolymerization of olefins in the presence of the catalyst system.

Abstract: Processes are provided for producing transition metal amides. In methods according to this invention, at least a halogenated transition metal and an amine are combined in a solvent to produce an intermediate composition and an alkylated metal or a Grignard reagent is added to the intermediate composition to produce the transition metal amide.

Abstract: Crystals of [VOBDC](H2BDC)0.71 were synthesized hydrothemally. The guest acid molecules were removed by heating in air to give high quality single crystals of VOBDC. VOBDC was observed to show crystal-to-crystal transformations on absorption of the guest molecules aniline, thiophene and acetone from the liquid phase. Accurate structural data of the guest molecules and framework deformations were obtained from single crystal X-ray data. VOBDC was also shown to absorb selectively thiophene and dimethyl sulphide from methane.

Abstract: Tantalum compounds of Formula I hereof are disclosed, having utility as precursors for forming tantalum-containing films such as barrier layers. The tantalum compounds of Formula I may be deposited by CVD or ALD for forming semiconductor device structures including a dielectric layer, a barrier layer on the dielectric layer, and a copper metallization on the barrier layer, wherein the barrier layer includes a Ta-containing layer and sufficient carbon so that the Ta-containing layer is amorphous. According to one embodiment, the semiconductor device structure is fabricated by depositing the Ta-containing barrier layer, via CVD or ALD, from a precursor including the tantalum compound of Formula I hereof at a temperature below about 400° C. in a reducing or inert atmosphere, e.g., a gas or plasma optionally containing a reducing agent.

Abstract: A new, clinically applicable magnetic resonance imaging (MRI) method has been developed for in vivo imaging of a population of cells in a subject based on a class of paramagnetic divalent vanadyl-based contrast agents. The method includes administering to a subject a VO2+-based contrast agent and monitoring distribution of the VO2+-based contrast agent in the subject using magnetic resonance imaging.

Abstract: Atomic layer deposition processes for the formation of tantalum-containing films on surfaces are provided. Also provided are novel tantalum complexes that can be used as tantalum precursors in the disclosed deposition processes.

Abstract: This invention relates to organometallic precursor compounds represented by the formula i-PrN?Ta(NR1R2)3 wherein R1 and R2 are the same or different and are alkyl having from 1 to 3 carbon atoms, provided that (i) when R1 is ethyl, then R2 is other than ethyl and (ii) when R2 is ethyl, then R1 is other than ethyl, and a method for producing a film, coating or powder from the organometallic precursor compounds.

Abstract: Metal-containing complexes of a tridentate beta-ketoiminate, one embodiment of which is represented by the structure: wherein M is a metal such as calcium, strontium, barium, scandium, yttrium, lanthanum, titanium, zirconium, vanadium, tungsten, manganese, cobalt, iron, nickel, ruthenium, zinc, copper, palladium, platinum, iridium, rhenium, osmium; R1 is selected from the group consisting of alkyl, alkoxyalkyl, fluoroalkyl, cycloaliphatic, and aryl, having 1 to 10 carbon atoms; R2 is selected from the group consisting of hydrogen, alkyl, alkoxy, cycloaliphatic, and aryl; R3 is linear or branched selected from the group consisting of alkyl, alkoxyalkyl, fluoroalkyl, cycloaliphatic, and aryl; R4 is a branched alkylene bridge with at least one chiral center; R5-6 are individually linear or branched selected from the group consisting of alkyl, fluoroalkyl, cycloaliphatic, aryl, and can be connected to form a ring containing carbon, oxygen, or nitrogen atoms; n is an integer equal to the valence of the metal

Abstract: Tantalum precursors useful in depositing tantalum nitride or tantalum oxides materials on substrates, by processes such as chemical vapor deposition and atomic layer deposition. The precursors are useful in forming tantalum-based diffusion barrier layers on microelectronic device structures featuring copper metallization and/or ferroelectric thin films.

Abstract: Ligands, compositions, and metal-ligand complexes that incorporate phenol-heterocyclic compounds are disclosed that are useful in the catalysis of transformations such as the polymerization of monomers into polymers. The catalysts have high performance characteristics, including high comonomer incorporation into ethylene/olefin copolymers, where such olefins are for example, 1-octene, propylene or styrene. The catalysts particularly polymerize styrene to form polystyrene.

Abstract: Novel Vanadium compounds are described as well as their use as inhibitors of phosphatases, particularly inositol phosphatases, The use of the compound in the treatment of nerodegenerative diseases is also described.

Abstract: Metal-containing complexes of a tridentate beta-ketoiminate, one embodiment of which is represented by the structure: wherein M is a metal such as calcium, strontium, barium, scandium, yttrium, lanthanum, titanium, zirconium, vanadium, tungsten, manganese, cobalt, iron, nickel, ruthenium, zinc, copper, palladium, platinum, iridium, rhenium, osmium; R1 is selected from the group consisting of alkyl, fluoroalkyl, cycloaliphatic, and aryl, having 1 to 10 carbon atoms; R2 is selected from the group consisting of hydrogen, alkyl, alkoxy, cycloaliphatic, and aryl; R3 is linear or branched selected from the group consisting of alkylene, fluoroalkyl, cycloaliphatic, and aryl; R4 is a branched alkylene bridge with at least one chiral center; R5-6 are individually linear or branched selected from the group consisting of alkyl, fluoroalkyl, cycloaliphatic, aryl, and can be connected to form a ring containing carbon, oxygen, or nitrogen atoms; n is an integer equal to the valence of the metal M.

Abstract: The present invention relates to specific, novel tantalum and niobium compounds which can serve as starting materials for the preparation of chemical vapour deposition (CVD) precursors.

Abstract: An ore containing crystal water (bond water) is heated to dehydrate the crystal water in the form of water vapor, thereby rendering the ore porous to generate a porous ore. Next, the porous ore is forced into contact with a dry-distilled gas (organic gas) obtained by dry-distillation of an organic substance such as wood and the like or an organic liquid such as tar and the like. An organic compound such as tar and the like contained in the dry-distilled gas or organic liquid adheres to the surface of the porous ore. Next, the porous ore adhered with an organic compound is heated at 500° C. or higher, to generate an ore in which a part of an oxide of an element such as iron and the like contained is reduced by carbon in the organic compound.

Abstract: An asymmetric reaction catalyst is obtained by mixing a pentavalent niobium compound and an optically active triol or tetraol having a binaphthol structure of R or s configuration, and the triol is represented by the following formula: wherein, Y is divalent hydrocarbon and RI is a hydrogen atom, a halogen atom, a trifluoromethyl group, or an alkyl group or alkoxy group having at most 4 carbons.

Abstract: Objects of the present invention are to provide a novel niobium or tantalum complex having good vapor pressure and becoming a raw material for producing a niobium- or tantalum-containing thin film by a method such as CVD method, ALD method or the like, a method for producing the same, a metal-containing thin film using the same, and a method for producing the same. The present invention relates to producing an imide complex represented by the general formula (1) by, for example, the reaction between M1(NR1)X3(L)r (2) and an alkali metal alkoxide (3): (wherein M1 represents niobium atom or tantalum atom, R1 represents an alkyl group having from 1 to 12 carbon atoms, R2 represents an alkyl group having from 2 to 13 carbon atoms, X represents halogen atom, r is 1 when L is 1,2-dimethoxyethane ligand, r is 2 when L is pyridine ligand, and M2 represents an alkali metal), and producing a niobium- or tantalum-containing thin film by using the imide complex (1) as a raw material.

Abstract: Metal(IV) tetrakis(N,N?-dialkylamidinates) were synthesized and characterized. Exemplary metals include hafnium, zirconium, tantalum, niobium, tungsten, molybdenum, tin and uranium. These compounds are volatile, highly stable thermally, and suitable for vapor deposition of metals and their oxides, nitrides and other compounds.

Abstract: Single precursors for use in flash ALD processes are disclosed. These precursors have the general formula: XmM(OR)n or XpM(O2R?)q where M is Hf, Zr, Ti, Al, or Ta; X is a ligand that can interact with surface hydroxyl sites; OR and O2R? are alkoxyl groups with R and R? containing two or more carbon atoms; m+n=3 to 5; p+2q=3 to 5; and m, n, p, q?0. Further precursors have the general formula: (R12N)mM(?NR2)n or (R3CN2R42)pM(?NR2)q where M is Hf, Zr, Ti, or Ta; R12N is an amino group with R1 containing two or more carbon atoms; NR2 is an imido group with R2 containing two or more carbon atoms; R3 and R4 are alkyl groups; m+2n=4 or 5; p+2q=4 or 5; and m, n, p, q?0. Flash ALD methods using these precursors are also described.

Abstract: The present invention relates to a process for preparing olefin polymers by polymerization or copolymerization of at least one olefin of the formula Ra—CH?CH—Rb, where Ra and Rb are identical or different and are each a hydrogen atom or a hydrocarbon radical having from 1 to 20 carbon atoms, or Ra and Rb together with the atoms connecting them can form a ring, at a temperature of from ?60 to 200° C. and a pressure of from 0.

Abstract: Processes for preparing high-purity niobium alkoxides, especially niobium ethoxide, are described which include: (a) providing a crude niobium alkoxide starting material comprising at least one compound of the general formula (I) Nb(OR)5??(I) wherein each R independently represents a linear or branched C1-12 alkyl group; and (b) contacting the crude niobium alkoxide starting material with a treatment medium comprising a component selected from the group consisting of (i) one or more alcohols of the general formula (II) in an amount of 0.01 to 5% by weight, (ii) air or an oxygen-containing gas, and (iii) combinations thereof; R1OH??(II) wherein each R1 independently represents a linear or branched C1-12 alkyl group.

Abstract: The present invention is directed to methods and compositions which include nitrate amino acid chelates that can increase the metabolic activity or metal concentration in animals and that can increase metabolic activity and nitrogen content in plants. In one embodiment, a nitrate-complexed amino acid composition can comprise a metal, an amino acid ligand, and a nitrate, wherein the amino acid ligand is chelated to the metal forming an amino acid chelate and the nitrate is complexed to the amino acid chelate. In another embodiment, a nitrate-chelated amino acid composition can comprise a metal, an amino acid ligand, and a nitrate, wherein the amino acid ligand and the nitrate are chelated to the metal forming a nitrate-chelated amino acid chelate.

Abstract: The present invention is directed to vanadium compositions and methods for making such metal oxide compositions, specifically, such metal oxide compositions having high surface area, high metal/metal oxide content, and/or thermal stability with inexpensive and easy to handle materials.

Abstract: Oil soluble catalysts are used to convert polynuclear aromatic compounds in a hydrocarbon feedstock to higher value mono-aromatic compounds. The catalyst complex includes a catalytic metal center that is bonded to a plurality of organic ligands that make the catalyst complex oil-soluble. The ligands include an aromatic ring and a ligand spacer group. The ligand spacer group provides spacing of 2-6 atoms between the metal center and the aromatic ring. The spacing between the aromatic group and the catalytic metal center advantageously allows the catalyst to selectively crack polynuclear aromatic rings while preserving one of the aromatic rings, thereby increasing the content of mono-aromatic compounds in the hydrocarbon feedstock.

Abstract: Metal films are deposited with uniform thickness and excellent step coverage. Copper metal films were deposited on heated substrates by the reaction of alternating doses of copper(I) N,N?-diisopropylacetamidinate vapor and hydrogen gas. Cobalt metal films were deposited on heated substrates by the reaction of alternating doses of cobalt(II) bis(N,N?-diisopropylacetamidinate) vapor and hydrogen gas. Nitrides and oxides of these metals can be formed by replacing the hydrogen with ammonia or water vapor, respectively. The films have very uniform thickness and excellent step coverage in narrow holes. Suitable applications include electrical interconnects in microelectronics and magnetoresistant layers in magnetic information storage devices.

Abstract: Methods of storing a precursor which decreases the precursor decomposition rate. A vessel is provided, where the vessel has an outer surface made of a first material, and an inner surface made of a second material. The first and second materials are different. A tantalum containing precursor is placed inside the vessel, and the vessel is heated to a temperature between 60° C. and 150° C. At least part of the precursor is withdrawn from the vessel.

Abstract: Metal-containing complexes of a tridentate beta-ketoiminate, one embodiment of which is represented by the structure: wherein M is a metal such as calcium, strontium, barium, scandium, yttrium, lanthanum, titanium, zirconium, vanadium, tungsten, manganese, cobalt, iron, nickel, ruthenium, zinc, copper, palladium, platinum, iridium, rhenium, osmium; R1 is selected from the group consisting of alkyl, fluoroalkyl, cycloaliphatic, and aryl, having 1 to 10 carbon atoms; R2 is selected from the group consisting of hydrogen, alkyl, alkoxy, cycloaliphatic, and aryl; R3 is linear or branched selected from the group consisting of alkylene, fluoroalkyl, cycloaliphatic, and aryl; R4 is a branched alkylene bridge with at least one chiral center; R5-6 are individually linear or branched selected from the group consisting of alkyl, fluoroalkyl, cycloaliphatic, aryl, and can be connected to form a ring containing carbon, oxygen, or nitrogen atoms; n is an integer equal to the valence of the metal M.

Abstract: The present invention relates to specific, novel tantalum and niobium compounds which can serve as starting materials for the preparation of chemical vapour deposition (CVD) precursors.

Abstract: Transition metal complexes with tridentate, nitrogen-containing, uncharged ligand systems, a catalyst system comprising at least one of the transition metal complexes, the use of the catalyst system for the polymerization or copolymerization of olefins and a process for preparing polyolefins by polymerization or copolymerization of olefins in the presence of the catalyst system.

Abstract: Peroxo-carbonates derived from molten alkali and/or Group II metal salts, particularly carbonate salts are used as catalysts in oxidation and epoxidation reactions, transition metal compounds may be included to improve the selectivity of the reactions.

Abstract: A method for producing an aromatic compound polymer comprising oxidatively polymerizing one or more of aromatic compound(s) having two or more hydrogen atoms directly connected to aromatic ring(s), in the presence of an oxidizing agent, wherein the method employs a catalyst composed of a transition metal complex or a catalyst prepared from a transition metal complex and an activating agent, and said catalyst has a parameter P defined by the following formula (A) of 0.50 or more, and a parameter Eo defined by the following formula (B) of 0.50 [V] or more: P=Af/Ai??(A) and Eo=(Epa+Epc)/2[V]??(B).

Abstract: Tantalum precursors useful in depositing tantalum nitride or tantalum oxides materials on substrates, by processes such as chemical vapor deposition and atomic layer deposition. The precursors are useful in forming tantalum-based diffusion barrier layers on microelectronic device structures featuring copper metallization and/or ferroelectric thin films.

Abstract: A metal sulfide nanocrystal manufactured by a method of reacting a metal precursor and an alkyl thiol in a solvent, wherein the alkyl thiol reacts with the metal precursor to form the metal sulfide nanocrystals, wherein the alkyl thiol is present on the surface of the metal sulfide nanocrystal, wherein the alkyl thiol is bonded to the sulfur crystal lattice. A metal sulfide nanocrystal manufactured with a core-shell structure by a method of reacting a metal precursor and an alkyl thiol in a solvent to form a metal sulfide layer on the surface of a core, wherein the alkyl thiol is present on the surface of the metal sulfide nanocrystal, wherein the alkyl thiol is bonded to the sulfur crystal lattice. These metal sulfide nanocrystals can have a uniform particle size at the nanometer-scale level, selective and desired crystal structures, and various shapes.

Abstract: [PROBLEMS] To provide a metal complex compound capable of being suitably used for manufacturing a metal-containing thin film by the CVD method and a method for preparing a metal-containing thin film. [MEANS FOR SOLVING PROBLEMS] A metal complex compound comprising a ?-diketonato ligand having an alkoxyalkyl-methyl group, and a method for preparing a metal-containing thin film using the metal complex compound by the CVD method.

Abstract: A niobium compound, ammonium(bisaquo oxobisoxalato)niobate (NH4)[Nb(O)(C2O4)2(H2O)2] and hydrates thereof, is described along with formulations containing the same and methods for creating a product specification for a batch, lot, or shipment of such compounds, comprising specifying at least one property value for said batch, lot, or shipment.