Semiconductor Patents (Class 73/754)
  • Patent number: 8127618
    Abstract: The disclosure relates in some aspects to an implantable pressure sensor and a method of measuring pressure. In some embodiments pressure may be measured through the use of an implantable lead incorporating one or more pressure sensors. In some aspects a pressure sensor is implemented in a micro-electromechanical system (“MEMS”) that employs direct mechanical sensing. A biocompatible material is attached to one or more portions of the MEMS sensor to facilitate implant in a body of a patient. The MEMS sensor may thus be incorporated into an implantable lead for measuring blood pressure in, for example, one or more chambers of the patient's heart.
    Type: Grant
    Filed: May 18, 2007
    Date of Patent: March 6, 2012
    Assignee: Pacesetter, Inc.
    Inventors: Yong D. Zhao, Apratim Dixit
  • Publication number: 20120048025
    Abstract: A pressure sensor device includes a semiconductor pressure sensor element and a base part. The base part includes a mounting surface, a through hole having an opening on the mounting surface and configured to introduce a fluid to the semiconductor pressure sensor element, a soldered part that is to be soldered and is provided on the mounting surface, and a step-like structure formed on the mounting surface between the opening and the soldered part.
    Type: Application
    Filed: August 16, 2011
    Publication date: March 1, 2012
    Applicant: MITSUMI ELECTRIC CO., LTD.
    Inventor: Takashi USUI
  • Patent number: 8104355
    Abstract: A measurement element includes a semiconductor substrate with electrical insulating film formed thereon. A resistor formed on the electrical insulating film constitutes a heater; and a cavity is formed by removing a portion of the semiconductor substrate that corresponds to a region where a body part of the resistor is formed. The region where the body part of the resistor is formed is formed into a thin wall part by the cavity, and an opening and a slit is formed in a portion of the thin wall part in such a manner as to penetrate the thin wall part in the thickness direction. The measurement element has a film formed covering the region of the opening or slit.
    Type: Grant
    Filed: February 17, 2010
    Date of Patent: January 31, 2012
    Assignee: Hitachi Automotive Systems, Ltd.
    Inventors: Rintaro Minamitani, Keiji Hanzawa, Akio Yasukawa
  • Publication number: 20120016207
    Abstract: An electromagnetically coupled hermetic chamber includes a body defining a hermetic chamber. A distributed LC circuit is disposed within the hermetic chamber and a second conductive structure is attached to the body outside of the hermetic chamber. The distributed LC circuit is electromagnetically coupled to the second conductive structure without direct electrical paths thereby allowing coupling of the distributed LC circuit to external electronics without the need for electrical feedthroughs or vias that could compromise the integrity of the hermetic chamber.
    Type: Application
    Filed: September 26, 2011
    Publication date: January 19, 2012
    Applicant: CardioMEMS
    Inventor: MARK G. ALLEN
  • Patent number: 8096188
    Abstract: A mechanical-to-electrical sensing structure is provided with first and second movable blocks. A first hinge is coupled to the first and second movable blocks and configured to resist loads other than flexing of the first hinge. At least a first gage link is separated from the first hinge and aligned to provide that a moment tending to rotate one of the first or second blocks relative to the other about the first hinge applies a tensile or compressive force along a length of the first gage link. Electrochemistry is used to define the at least first gage.
    Type: Grant
    Filed: September 28, 2009
    Date of Patent: January 17, 2012
    Assignee: Meggitt (San Juan Capistrano), Inc.
    Inventor: Leslie Bruce Wilner
  • Patent number: 8084694
    Abstract: An electrical contact device comprising a first contact assemblage having multiple contact pads disposed in a row which are allocated to different connection types, and having a second contact assemblage having multiple contact pads disposed in a row in accordance with a predetermined sequence, which are allocated to different connection types and having bonding wire connections that electrically connect at least some of the contact pads of the first contact assemblage to contact pads of the second contact assemblage.
    Type: Grant
    Filed: July 25, 2006
    Date of Patent: December 27, 2011
    Assignee: Robert Bosch GmbH
    Inventors: Juergen Stegmaier, Markus Ledermann
  • Patent number: 8069732
    Abstract: Embodiments of an ultra miniature pressure probe are disclosed. The pressure probe can include a probe body, a plurality of transducer ports, and a plurality of transducers. The probe body can be a longitudinal tubular body having a front conical end. The transducer ports can be disposed about the front end of the body. The transducers can be leadless SOI transducers, each having an active deflection area associated with a semiconductor substrate. Each transducer can be in communication with a header for supporting the transducer. The header can have a thickness substantially less than the probe diameter and can comprise a flange about an edge of the header. Each of the plurality of transducer ports can define an aperture and a counter-bore, wherein each transducer is positionable in an associated transducer port with the flange of the header of the transducer being welded to the counter-bore of the transducer port.
    Type: Grant
    Filed: January 13, 2010
    Date of Patent: December 6, 2011
    Assignee: Kulite Semiconductor Products, Inc.
    Inventor: Anthony D. Kurtz
  • Patent number: 8065919
    Abstract: A MEMS device includes: a substrate having a through hole; a first film provided on a top surface of the substrate with a bottom surface of the first film exposed in the through hole; a second film provided over the first film with an air gap interposed therebetween, and having a hole grouping including holes each in communication with the air gap; and a supporting layer interposed between the first and second films and having the air gap formed therein. Outermost holes of the hole grouping are located at regular intervals along a shape of an opening of the through hole at an upper open end.
    Type: Grant
    Filed: November 18, 2009
    Date of Patent: November 29, 2011
    Assignee: Panasonic Corporation
    Inventor: Yusuke Takeuchi
  • Patent number: 8037771
    Abstract: An electronic pressure-sensing device 100 comprising a transistor 105 located on a substrate 110. The device also comprises a linker arm 115 that has a tip 120 which is configured to touch a contact region 125 of the substrate that is near the transistor. The device also comprises a pressure converter 130 that is mechanically coupled to the linker arm. The pressure converter is configured to cause, in response to a pressure change, the tip to impart a force capable of changing an electrical conductivity of the transistor.
    Type: Grant
    Filed: May 13, 2009
    Date of Patent: October 18, 2011
    Assignee: LSI Corporation
    Inventor: Edward B. Harris
  • Patent number: 8025625
    Abstract: An electromagnetically coupled hermetic chamber includes a body defining a hermetic chamber. A first conductive structure is disposed within the hermetic chamber, and a second conductive structure is attached to the body outside of the hermetic chamber. The first conductive structure is electromagnetically coupled to the second conductive structure without direct electrical paths connecting the first and second conductive structures. Thus the first conductive structure can be coupled to external electronics without the need for electrical feedthroughs or vias that could compromise the integrity of the hermetic chamber.
    Type: Grant
    Filed: April 12, 2006
    Date of Patent: September 27, 2011
    Assignee: CardioMEMS, Inc.
    Inventor: Mark G. Allen
  • Publication number: 20110209552
    Abstract: A relative pressure sensor for registering pressure of a medium relative to surrounding atmospheric pressure includes: a pressure measuring cell having a measuring membrane and a platform, wherein pressure of the medium can act on a first side of the measuring membrane facing away from the platform, and wherein the platform has a reference air opening, through which surrounding atmospheric pressure can act on a second side of the measuring membrane facing the platform. A support body, through which a reference air duct extends between a first surface section and a second surface section of the support body is provided, wherein the pressure measuring cell is affixed to the support body with a pressure resistant, bonded adhesive.
    Type: Application
    Filed: August 12, 2009
    Publication date: September 1, 2011
    Applicant: Endress + Hauser GmbH + Co. KG
    Inventors: Anh Tuan Tham, Davide Parrotto, Frank Passler, Olaf Krusemark, Ulrich Buder
  • Patent number: 8004423
    Abstract: An instrumented component (18, 19) for use in various operating environments such as the hot gas path section of a combustion turbine engine (10). The component (18, 19) may have a substrate, a sensor (50, 204, 210) connected with the substrate for sensing a condition of the component (18, 19) within the casing during operation of the combustion turbine (10) and a connector (52, 202) attached to the substrate and in communication with the sensor (50, 204, 210) for routing a data signal from the sensor (50, 204, 210) to a termination location (53). The component (18, 19) may include a wireless telemetry device (54, 202) in communication with the connector (52, 202) for wirelessly transmitting the data signal outside the casing. A transceiver (56) may be located outside the casing for receiving the data signal and transmitting it to a processing module (30) for developing information with respect to a condition of the component (18, 19) or a coating (26) deposited on the component (18, 19).
    Type: Grant
    Filed: September 14, 2006
    Date of Patent: August 23, 2011
    Assignee: Siemens Energy, Inc.
    Inventors: David J. Mitchell, Anand A. Kulkarni, Ramesh Subramanian, Edward R. Roesch
  • Patent number: 7998777
    Abstract: A method for fabricating a sensor is disclosed that in one embodiment bonds a first device wafer to an etched second device wafer to create a suspended structure, the flexure of which is determined by an embedded sensing element that is in electrical communication with an outer surface of the sensor through an interconnect embedded in a device layer of the first device wafer. In one embodiment the suspended structure is enclosed by a cap and the sensor is configured to measure absolute pressure.
    Type: Grant
    Filed: December 15, 2010
    Date of Patent: August 16, 2011
    Assignee: General Electric Company
    Inventors: Sisira Kankanam Gamage, Naresh Venkata Mantravadi
  • Patent number: 7994618
    Abstract: A sensor module has a carrier substrate having a bottom side and a top side, a sensor chip arranged on the top side of the carrier substrate and having a pressure-sensitive active area, a signal-processing chip arranged on the top side of the carrier substrate next to the sensor chip and being connected to the sensor chip in an electrically conducting manner, a continuous casting material covering the top side of the carrier substrate and the signal-processing chip and being in mechanical contact with both, the casting material having a recess which is arranged such that the casting material does not cover at least a part of the active area of the sensor chip.
    Type: Grant
    Filed: November 14, 2006
    Date of Patent: August 9, 2011
    Assignee: Infineon Technologies AG
    Inventors: Alfons Dehe, Marc Fueldner
  • Patent number: 7992441
    Abstract: A pressure sensor module is disclosed. The pressure sensor module comprises a sensing element (1) mounted on a front side (3) of a support member (5). The support member (5) comprises a hole (7) through the support member (5) from the front side (3) to a back side (9). The sensing element (1) covers the hole (7) at the front side (3). A back side barrier (6) provided at the back side (9) of the support member (5) surrounds a surface of the back side (9) of the support member (5) and forms an enclosed area (8), wherein the enclosed area (8) and the hole (7) form a pressure channel (10). A back side protective member (2) fills the hole (7) and at least partially the enclosed area (8). The support member (5), back side barrier (6) and back side protective member (2) form a module that can be placed during production of the pressure sensor in a housing of the pressure sensor.
    Type: Grant
    Filed: July 16, 2009
    Date of Patent: August 9, 2011
    Assignee: Sensata Technologies, Inc.
    Inventors: Sean P. Mulligan, Frank Morsink, Jun Bae, Gerald Spijksma, Tom te Boekhorst
  • Patent number: 7987727
    Abstract: A semiconductor pressure sensor is provided that includes a diaphragm, a resistive element arranged at an upper portion of the diaphragm, an insulating film arranged on an upper face of the resistive element and an upper face of the diaphragm, a via that penetrates through a portion of the insulating film and comes into contact with the resistive element, and wiring that is electrically connected to the resistive element through the via. The insulating film includes a concave portion having a bottom face that is substantially flat. The wiring is arranged on the bottom face of the concave portion, and the depth of the concave portion is substantially equal to the thickness of the wiring.
    Type: Grant
    Filed: July 21, 2008
    Date of Patent: August 2, 2011
    Assignee: Mitsumi Electric Co., Ltd.
    Inventor: Yasuhide Fujioka
  • Patent number: 7969323
    Abstract: An instrumented component (18, 19) for use in various operating environments such as within a combustion turbine engine (10). The component (18, 19) may have a substrate, a sensor (50, 94, 134) connected with the substrate for sensing a condition of the component (18, 19) during operation of the combustion turbine (10) and a connector (52, 92, 140) attached to the substrate and in communication with the sensor (50, 94, 134) for routing a data signal from the sensor (50, 94, 134) to a termination location (53). The component (18, 19) may include a wireless telemetry device (54, 76, 96) in communication with the connector (52, 92, 140) for wirelessly transmitting the data signal. Recesses (114, 116) may be formed with a root portion (112, 132) of components (18, 19) within which wireless telemetry device (54, 76, 96) may be affixed.
    Type: Grant
    Filed: September 14, 2006
    Date of Patent: June 28, 2011
    Assignee: Siemens Energy, Inc.
    Inventors: David J. Mitchell, Anand A. Kulkarni, Ramesh Subramanian, Edward R. Roesch
  • Patent number: 7938028
    Abstract: A force sensor comprises a force sensor chip, and a buffering device for dampening and applying incoming external force to the force sensor chip. The buffering device comprises an input portion to which external force is input, a sensor mount for fixing the force sensor chip to the exterior, a dampening mechanism for dampening external force, and a transmission portion for transmitting the dampened external force to the active sensing portion.
    Type: Grant
    Filed: August 19, 2009
    Date of Patent: May 10, 2011
    Assignee: Honda Motor Co., Ltd.
    Inventors: Yusuke Hirabayashi, Takeshi Ohsato, Nobuhiro Sakurai, Shigenori Yasuie, Hiroshi Yokobayashi
  • Patent number: 7932117
    Abstract: A pressure sensor (e.g., a condenser microphone) includes a plate having a fixed electrode, a diaphragm having a moving electrode positioned opposite to the fixed electrode, and a support, wherein the diaphragm is subjected to displacement due to pressure variations applied thereto, and the support has a first interior wall forming a first cavity, in which the end portions of the plate are fixed, and a second interior wall, in which a step portion is formed in the thickness direction of the diaphragm in relation to the first interior wall and which forms a second cavity whose cross-sectional area is larger than the cross-sectional area of the first cavity in the plane direction of the diaphragm. The first and second cavities can be redesigned to communicate with each other via a passage, whereby it is possible to improve both of low-frequency characteristics and high-frequency characteristics in the pressure sensor.
    Type: Grant
    Filed: July 9, 2007
    Date of Patent: April 26, 2011
    Assignee: Yamaha Corporation
    Inventor: Yuki Ueya
  • Patent number: 7928960
    Abstract: In an input device, a control element is operated by a user; a pressure sensor is mechanically coupled to the control element and is provided with a monolithic body of semiconductor material housing a first sensitive element, which detects an actuation of the control element; a supporting element is connected to the pressure sensor; and connection elements electrically connect the monolithic body to the supporting element without interposition of a package. In particular, the monolithic body has electrical-contact areas carried by one main surface thereof, and the printed circuit board has conductive regions carried by a main face thereof; the connection elements are conductive bumps and electrically connect the electrical-contact areas to the conductive regions.
    Type: Grant
    Filed: September 8, 2006
    Date of Patent: April 19, 2011
    Assignee: STMicroelectronics S.r.l.
    Inventors: Lorenzo Baldo, Chantal Combi, Dino Faralli
  • Patent number: 7926353
    Abstract: A semiconductor device includes a first sensor element in a first branch of a Wheatstone bridge and a second sensor element in a second branch of the Wheatstone bridge. The semiconductor device includes a first reference element in the first branch and a second reference element in the second branch. The semiconductor device includes a circuit configured to switch the first sensor element to the second branch and the second sensor element to the first branch.
    Type: Grant
    Filed: January 16, 2009
    Date of Patent: April 19, 2011
    Assignee: Infineon Technologies AG
    Inventor: Dirk Hammerschmidt
  • Patent number: 7926352
    Abstract: For example, to adjust an offset of a pressure sensor, there are provided an external resistor RE and an internal resistor circuit that is connected to both ends of RE and formed in a semiconductor chip such as a processor. The internal resistor circuit includes N pieces of internal resistors RI connected in series between both ends of RE, and (N+1) pieces of switches selecting one of voltages of respective nodes of the serial resistors and outputs the same as a signal. RE has a high absolute value precision of, e.g., several ten ohms to several hundred ohms, and RI has a high relative value precision of, e.g., several kilo-ohms. Therefore, an offset adjustment range is decided at a high absolute value precision mainly by RE, and with regard to the arrangement resolution, a high precision can be obtained along with the relative value precision of the RI.
    Type: Grant
    Filed: December 23, 2008
    Date of Patent: April 19, 2011
    Assignee: Renesas Electronics Corporation
    Inventors: Tadashi Matsushima, Masaru Sugai, Chung Wen Hung, Yuji Shimizu
  • Patent number: 7926354
    Abstract: A diaphragm made of a polysilicon film is provided above a first main surface of a silicon substrate. Four gauge resistors are provided on the top face of the diaphragm. A through hole for exposing the bottom face of the diaphragm is formed in the silicon substrate. An anchor portion for mounting the diaphragm on the silicon substrate is provided between the diaphragm and the silicon substrate in a manner surrounding circumferentially an opening end of the through hole located at the side facing the first main surface. Accordingly, a semiconductor pressure sensor having a diaphragm of reduced and less varied thickness can be obtained.
    Type: Grant
    Filed: August 18, 2009
    Date of Patent: April 19, 2011
    Assignee: Mitsubishi Electric Corporation
    Inventor: Kimitoshi Sato
  • Patent number: 7921724
    Abstract: A single pressure sensing capsule has a reference pressure ported to the rear side of a silicon sensing die. The front side of the silicon sensing die receives a main pressure at another port. The silicon sensing die contains a full Wheatstone bridge on one of the surfaces and within the active area designated as the diaphragm area. Thus, the difference of the main and reference pressure results in the sensor providing an output equivalent to the differential pressure, namely the main pressure minus the reference pressure which is the stress induced in a sensing diaphragm. In any event, the reference pressure or main pressure may be derived from a pump pressure which is being monitored. The pump pressure output is subjected to a pump ripple or a sinusoidally varying pressure. In order to compensate for pump ripple, one employs a coiled tube. The tube length is selected to suppress the pump ripple as applied to the sensor die.
    Type: Grant
    Filed: October 6, 2009
    Date of Patent: April 12, 2011
    Assignee: Kulite Semiconductor Products, Inc.
    Inventors: Anthony D. Kurtz, Richard Martin, Robert Gardner, Adam Kane
  • Patent number: 7918138
    Abstract: A wireless microelectromechanical system (MEMS) pressure sensor with built in calibration. An actuator is coupled with a pressure sensing device to enable the pressure to be calibrated against the known pressure exerted by the actuator. The sensing component is configured to flex under the application of force to a pure bending condition, i.e., the sensing component flexes with no or insignificant shear forces in the sensing component.
    Type: Grant
    Filed: February 11, 2009
    Date of Patent: April 5, 2011
    Assignees: Regents of the University of California, The United States of America as represented by the Secretary of the Navy
    Inventors: Qing Jiang, Harold Glick
  • Patent number: 7900519
    Abstract: A tool to measure the depth of one or more through-silicon vias, the tool fabricated in silicon to include a microfluidic chamber that is positioned over the one or more through-silicon vias, further including a fluid actuation chamber to inject fluid into the microfluidic chamber and into the one or more through-silicon vias, and a pressure sensing chamber to sense the fluid pressure to indicate when the one or more through-silicon vias are filled with the fluid.
    Type: Grant
    Filed: June 11, 2009
    Date of Patent: March 8, 2011
    Assignee: QUALCOMM Incorporated
    Inventor: Arvind Chandrasekaran
  • Patent number: 7900520
    Abstract: A semiconductor pressure sensor for a pressure sensor device has a pressure detection element which includes a membrane made of semiconductor material, particularly silicon. The sensor includes a support having a three-dimensional body passed through by a detection passage. The detection element is made integral with a first end face of the three-dimensional body, substantially at a respective end of the detection passage. The support is configured to serve the function of a mechanical and/or hydraulic adaptor or interface, with the aim of mounting the sensor into a pressure sensor device, particularly to allow mounting the pressure sensor into a pressure sensor device configured for mounting a sensor of the type referred to as monolithic or ceramic.
    Type: Grant
    Filed: June 18, 2009
    Date of Patent: March 8, 2011
    Assignee: Eltek S.p.A.
    Inventor: Paolo Colombo
  • Patent number: 7900518
    Abstract: A variable capacitor, a microfabricated implantable pressure sensor including a variable capacitor and an inductor, and related pressure measurement and implantation methods. The inductor may have a fixed or variable inductance. A variable capacitor and pressure sensors include a flexible member that is disposed on a substrate and defines a chamber. Capacitor elements extend indirectly from the flexible member. Sufficient fluidic pressure applied to an exterior surface of the flexible member causes the flexible member to move or deform, thus causing the capacitance and/or inductance to change. Resulting changes in resonant frequency or impedance can be detected to determine pressure, e.g., intraocular pressure.
    Type: Grant
    Filed: August 29, 2007
    Date of Patent: March 8, 2011
    Inventors: Yu-Chong Tai, Po-Jui Chen, Damien C. Rodger, Mark S. Humayun
  • Publication number: 20110005326
    Abstract: A pressure detection mechanism having a pressure sense die which may be attached directly to a surface of an alumina-based substrate with an adhesive having an optimum thickness. The adhesive may be stress compliant and may be one or more of silicone, silicone-epoxy, epoxy or any other suitable adhesive material. A compensation and interface application specific integrated circuit may be attached to the surface of the package substrate. The pressure sense die may be electrically connected to the integrated circuit with bond wires. The integrated circuit may be electrically connected to trace conductors on the package substrate with bond wires, and trace conductors may be connected to stress compliant metal conductors or leads for external connection to a mounting surface such as a printed circuit board. Hard plastic, or like material, symmetric covers, with one or more pressure ports or vents, may be attached to both sides of the substrate.
    Type: Application
    Filed: June 30, 2010
    Publication date: January 13, 2011
    Applicant: HONEYWELL INTERNATIONAL INC.
    Inventors: Ian Bentley, Alistair David Bradley, Jim Cook
  • Publication number: 20110000304
    Abstract: A semiconductor substrate, provided with a differential pressure diaphragm, and a glass pedestal, which is provided on the bottom side of the semiconductor substrate, are provided, wherein: the bottom surface of the semiconductor substrate and the top surface of the glass pedestal are bonded together; a pressure introducing hole is formed in the glass pedestal so as to pass through the glass pedestal, connecting between the top and bottom surfaces of the glass pedestal; the pressure introducing hole is formed with a first diameter for the pressure introducing hole at the bottom surface of the glass pedestal from the bottom surface of the glass pedestal to a first position; and a second diameter for the pressure introducing hole at the top surface of the glass pedestal is larger than the first diameter; where a metal thin film layer is deposited on the bottom surface of the glass pedestal.
    Type: Application
    Filed: July 6, 2010
    Publication date: January 6, 2011
    Applicant: YAMATAKE CORPORATION
    Inventor: Hirofumi Tojo
  • Patent number: 7861597
    Abstract: There is disclosed a high temperature pressure sensing system which includes a SOI Wheatstone bridge including piezoresistors. The bridge provides an output which is applied to an analog to digital converter also fabricated using SOI technology. The output of the analog to digital converter is applied to microprocessor, which microprocessor processes the data or output of the bridge to produce a digital output indicative of bridge value. The microprocessor also receives an output from another analog to digital converter indicative of the temperature of the bridge as monitored by a span resistor coupled to the bridge. The microprocessor has a separate memory coupled thereto which is also fabricated from SOI technology and which memory stores various data indicative of the microprocessor also enabling the microprocessor test and system test to be performed.
    Type: Grant
    Filed: November 14, 2008
    Date of Patent: January 4, 2011
    Assignee: Kulite Semiconductor Products, Inc.
    Inventors: Anthony D. Kurtz, Wolf S. Landmann
  • Patent number: 7854171
    Abstract: The present invention relates to a temperature-compensated pressure sensor assembly for fitting within the valve stem of a vehicle tire. The assembly includes a substrate assembly defining a plurality of holes. A pressure sensor is mounted to the substrate assembly. The pressure sensor includes a first deflectable membrane defining a first chamber and a first cap mounted to the membrane to form a second chamber. A temperature compensation sensor is mounted to the substrate assembly. The temperature compensation sensor includes a second deflectable membrane mounted to the substrate assembly to define a third chamber and a second cap mounted to the other membrane to form a fourth chamber.
    Type: Grant
    Filed: September 21, 2008
    Date of Patent: December 21, 2010
    Assignee: Silverbrook Research Pty Ltd
    Inventors: Kia Silverbrook, Samuel George Mallinson
  • Publication number: 20100313667
    Abstract: Disclosed is an adhesive sheet for inspection, which is obtained by arranging an adhesive layer on a base film. The base film and the adhesive layer are electrically conductive, and an electrically conductive path is formed between the base film and the adhesive layer. Consequently, an inspection for electrical conduction of a semiconductor wafer or a semiconductor chip obtained by dicing a semiconductor wafer can be performed while the semiconductor wafer or the semiconductor chip is bonded to the adhesive sheet. In addition, this adhesive sheet for inspection enables to prevent deformation (warping) or breakage of a semiconductor wafer or generation of cracks or scratches on the back surface of the semiconductor wafer during the inspection.
    Type: Application
    Filed: October 9, 2008
    Publication date: December 16, 2010
    Inventors: Yoshio Terada, Fumiteru Asai, Hirokuni Hashimoto
  • Patent number: 7849749
    Abstract: A pressure sensor module of the invention includes a pressure sensor and a laminar substrate. Electrodes are arranged in the vicinity of a diaphragm portion of the pressure sensor. In the laminar substrate, a plurality of substrates are laminated, and the laminar substrate incorporates the pressure sensor. One face of the diaphragm portion is exposed by a space portion. According to the invention, it is possible to provide a pressure sensor module which facilitates smaller and thinner sizes, and which enables high-density packaging.
    Type: Grant
    Filed: May 28, 2009
    Date of Patent: December 14, 2010
    Assignee: Fujikura Ltd.
    Inventors: Satoshi Yamamoto, Mikio Hashimoto
  • Patent number: 7841241
    Abstract: A SAW based pressure sensor having a base 2a with an aperture 3 formed therein and a substrate 4 mounted on the base so as to completely overlie the aperture. The substrate 4 is adhered to base 2a so as to form a fluid tight seal around the periphery of the aperture 3. A first SAW resonator 5 is mounted on the substrate 4 wholly within the region overlying the aperture 3, with two further SAW resonators 6, 7 being mounted on the substrate wholly within a region which is stiffened by adhesion to the underlying base 2a , such that the two further SAW resonators 6, 7 are completely decoupled from the strain field arising in the substrate due to deflections thereof.
    Type: Grant
    Filed: April 27, 2006
    Date of Patent: November 30, 2010
    Assignee: Transense Technologies PLC
    Inventors: Arthur Leigh, Paul Edward Vickery
  • Patent number: 7832279
    Abstract: A semiconductor device includes a first cavity within a semiconductor substrate and a second cavity within the semiconductor substrate. The second cavity is open to an atmosphere and defines a first lamella between the first cavity and the second cavity. The semiconductor device includes a first sense element configured for sensing a pressure on the first lamella.
    Type: Grant
    Filed: September 11, 2008
    Date of Patent: November 16, 2010
    Assignee: Infineon Technologies AG
    Inventors: Thoralf Kautzsch, Boris Binder, Dirk Meinhold, Ben Rosam, Bernd Foeste, Andreas Thamm
  • Patent number: 7832278
    Abstract: Subject matter disclosed herein may relate to packaging for multi-chip semiconductor devices as may be used, for example, in tire pressure monitoring systems.
    Type: Grant
    Filed: May 29, 2008
    Date of Patent: November 16, 2010
    Assignee: Hong Kong Applied Science and Technology Research Institute Co., Ltd.
    Inventors: Man Lung Ivan Sham, Ziyang Gao, Chi Kuen Vincent Leung, Lap Wai Lydia Leung, Lourdito M. Olleres, Chang Hwa Tom Chung
  • Publication number: 20100281993
    Abstract: A semiconductor package (10) including a pressure sensor die (14) has an interconnect layer (22) formed over a first major surface of the pressure sensor die (14). An encapsulant (18) encapsulates a second major surface and sides of the pressure sensor die (14). A cavity (32) extends through the interconnect layer (22) to the first major surface of the pressure sensor die (14). The interconnect layer (22) allows for the assembly of a low-profile package.
    Type: Application
    Filed: May 6, 2009
    Publication date: November 11, 2010
    Applicant: FREESCALE SEMICONDUCTOR, INC
    Inventors: Wai Yew LO, Boon Seong Lee, Kar Yoke Ong
  • Publication number: 20100281994
    Abstract: A pressure sensing device comprises a substrate having an opening, a pressure sensor die electrically connected to the substrate, and a pedestal having an upper surface that extends through the opening in the substrate, with the upper surface affixed to the sensor die. The pedestal has a pressure port that extends from the upper surface to a bottom surface of the pedestal, with the pressure port containing a hermetic sealing tube therein. A hermetic sealing cover is affixed to the substrate over the sensor die, with the cover and the substrate containing a reference pressure for the sensor die. A media isolation component has a chamber filled with a fluid that transmits a pressure applied to the media isolation component to the pressure sensor die. A capillary tube is affixed within the pressure port of the pedestal and is in communication with the sealing tube. The capillary tube and the sealing tube provide fluid communication between the chamber of the media isolation component and the sensor die.
    Type: Application
    Filed: May 11, 2009
    Publication date: November 11, 2010
    Applicant: HONEYWELL INTERNATIONAL INC.
    Inventors: Gregory C. Brown, Thomas A. Larson
  • Patent number: 7808365
    Abstract: A diaphragm is formed at a predetermined location of a sensor chip made of semiconductor material, and a sensor gauge for differential pressure or pressure sensing-use is provided on the sensor chip that includes at least the diaphragm. The sensor gauge has a plurality of sensor gauges synergistically forming a bridge circuit, and are connected to one another with semiconductor resistors, the semiconductor resistors and the sensor gauges are covered with an insulating film, and the number of contact holes, passing through a portion of the insulating film, for electrode line-out use for forming contacts electrically connected to the semiconductor resistors does not exceed the number of sensor gauges.
    Type: Grant
    Filed: February 21, 2008
    Date of Patent: October 5, 2010
    Assignee: Yamatake Corporation
    Inventors: Hirofumi Tojo, Masayuki Yoneda, Tomohisa Tokuda
  • Patent number: 7806002
    Abstract: An automotive mirror assembly includes a mirror and transparent substrate adjacent to the mirror. The patterned coating is attached to transparent substrate and defines at least part of capacitive element. A capacitance sensor is in communication with the patterned coating thereby allowing capacitance changes induced in the patterned coating to be monitored.
    Type: Grant
    Filed: March 25, 2008
    Date of Patent: October 5, 2010
    Assignee: Lear Corporation
    Inventors: Keith E. Mattson, David A. Hein, Arjun V. Yetukuri
  • Patent number: 7798008
    Abstract: For a pressure sensor module comprising a printed circuit board and a pressure cell, wherein the pressure cell has a measuring opening, and the pressure cell is encapsulated by injection molding compound in such a manner that the measuring opening is kept open, the pressure cell, as viewed from the measuring opening, is attached on the rear side of the printed circuit board. The printed circuit board has a recess in the area of the measuring opening, and the injection molding compound encloses the attachment area of the pressure cell on the printed circuit board. Thereby, the use of different adhesives, also soft adhesives, for the connection of the pressure cell with the printed circuit board is possible without this attachment area being attacked by the surrounding media.
    Type: Grant
    Filed: April 7, 2009
    Date of Patent: September 21, 2010
    Assignee: Hella KGaA Hueck & Co.
    Inventors: Joerg Stuermann, Thomas Niemann
  • Patent number: 7793550
    Abstract: A sensor device. One embodiment provides a first sensor having a first sensor surface. The first sensor surface is exposed to allow sensing of a first variable. A second sensor has a second sensor surface. The second sensor surface is sealed to inhibit sensing of the first variable, and a mold material is embedded the first and second sensors.
    Type: Grant
    Filed: August 25, 2008
    Date of Patent: September 14, 2010
    Assignee: Infineon Technologies AG
    Inventors: Klaus Elian, Albert Auburger
  • Publication number: 20100218611
    Abstract: A semiconductor pressure sensor includes a silicon substrate, an active gauge resistance forming portion having a first diaphragm and a first gauge resistance formed on the silicon substrate, and a dummy gauge resistance forming portion for temperature compensation having a second diaphragm and a second gauge resistance, formed on the substrate. The first diaphragm of the active gauge resistance forming portion and the second diaphragm of the dummy gauge resistance forming portion for temperature compensation are formed of a common polysilicon film. The polysilicon film has an anchor portion to be connected to the substrate. The first and second diaphragms have mutually identical or symmetrical structures and the first and second gauges have mutually identical or symmetrical structures. Accordingly, a semiconductor pressure sensor capable of highly accurate temperature compensation and manufacturing method thereof can be provided.
    Type: Application
    Filed: August 18, 2009
    Publication date: September 2, 2010
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventor: Kimitoshi SATO
  • Publication number: 20100218613
    Abstract: A semiconductor device includes a substrate including a cavity and a first material layer over at least a portion of sidewalls of the cavity. The semiconductor device includes an oxide layer over the substrate and at least a portion of the sidewalls of the cavity such that the oxide layer lifts off a top portion of the first material layer toward a center of the cavity.
    Type: Application
    Filed: February 27, 2009
    Publication date: September 2, 2010
    Applicant: Infineon Technologies AG
    Inventors: Thoralf Kautzsch, Markus Rochel
  • Patent number: 7762141
    Abstract: A pressure sensor for a pressure medium includes: a sensor chip including a semiconductor substrate, a diaphragm in the substrate and a gauge resistor on the diaphragm; a protection cap covering the diaphragm; a case for accommodating the chip, introducing the pressure medium to the cap, and atmospheric air to the substrate; a terminal; a wiring; and a seal member. An embedded portion of the wiring is coupled with the gauge resistor. A connection portion of the wiring couples the embedded portion and the terminal. The embedded portion is covered with the cap to be isolated from the pressure medium. The seal member is disposed between the case and the substrate to isolate the connection portion from the pressure medium and the atmospheric air.
    Type: Grant
    Filed: February 12, 2008
    Date of Patent: July 27, 2010
    Assignee: DENSO CORPORATION
    Inventors: Hiroaki Tanaka, Tetsuo Fujii
  • Publication number: 20100180687
    Abstract: A semiconductor device includes a first sensor element in a first branch of a Wheatstone bridge and a second sensor element in a second branch of the Wheatstone bridge. The semiconductor device includes a first reference element in the first branch and a second reference element in the second branch. The semiconductor device includes a circuit configured to switch the first sensor element to the second branch and the second sensor element to the first branch.
    Type: Application
    Filed: January 16, 2009
    Publication date: July 22, 2010
    Applicant: Infineon Technologies AG
    Inventor: Dirk Hammerschmidt
  • Patent number: 7759945
    Abstract: A sensor incorporates a dual range ASIC (Application Specific Integrated Circuit) for accurately sensing and measuring sensor input over extensive range along with an improved resolution. The sensor can incorporate an ASIC utilizing signals from a MEMS-based piezoresistive Wheatstone bridge. Signals can also come from capacitive pressure measurement sources. The signals can be converted to digital bit counts where calibration coefficients can be implemented to achieve high precision. The calibration coefficients corresponding to bit counts can be compared with transition points that are recorded into ASIC for effectively distinguishing different sensor ranges. The transition points can be stored in an EEPROM fabricated to suit ASIC applications.
    Type: Grant
    Filed: August 22, 2007
    Date of Patent: July 20, 2010
    Assignee: Honeywell International Inc.
    Inventor: Richard A. Wade
  • Publication number: 20100175483
    Abstract: A system is disclosed for detecting an electrical sensor, the system includes a sensor signal processing circuit further comprising an input port to receive a connector including the output signal lines of the sensor, a resistor connected to the output signal line of said input port, wherein the resistor is connected to a predetermined voltage; a sensor circuit having a connector adapted to connect to the connector, wherein the sensor circuit has a resistance substantially less than the pull-resistor, and the sensor signal processing circuit detects an unconnected sensor based on the voltage applied by the resistor.
    Type: Application
    Filed: January 15, 2010
    Publication date: July 15, 2010
    Applicant: CHF SOLUTIONS INC.
    Inventors: John J. O'Mahony, Mark Gelfand, Edwin B. Merrick, Jayne B. Merrick
  • Patent number: 7743664
    Abstract: A transistor-type pressure sensor is provided, having an upper and a lower substrates, a source/drain formed on the lower substrate and separated from each other, a channel layer formed between and on the source/drain, a dielectric layer and a gate. The gate is substantially formed between the source and the drain. The surface of the gate, being in contact with the dielectric layer, has a stepped surface profile, so that the channel length/width ratio can be changed due to the pressure sensed by the pressure sensor.
    Type: Grant
    Filed: August 11, 2008
    Date of Patent: June 29, 2010
    Assignee: Industrial Technology Research Institute
    Inventors: Chao-Feng Sung, Chih-Wei Chu, Yuh-Zheng Lee, Chao-Kai Cheng