Semiconductor Patents (Class 73/754)
  • Patent number: 7743664
    Abstract: A transistor-type pressure sensor is provided, having an upper and a lower substrates, a source/drain formed on the lower substrate and separated from each other, a channel layer formed between and on the source/drain, a dielectric layer and a gate. The gate is substantially formed between the source and the drain. The surface of the gate, being in contact with the dielectric layer, has a stepped surface profile, so that the channel length/width ratio can be changed due to the pressure sensed by the pressure sensor.
    Type: Grant
    Filed: August 11, 2008
    Date of Patent: June 29, 2010
    Assignee: Industrial Technology Research Institute
    Inventors: Chao-Feng Sung, Chih-Wei Chu, Yuh-Zheng Lee, Chao-Kai Cheng
  • Publication number: 20100139409
    Abstract: A micromechanical pressure sensor includes a first diaphragm and a second diaphragm accommodated in a shared semiconductor substrate. The two diaphragms facilitate independent pressure sensing of one or more media, by the fact that a respective pressure variable is sensed by way of the deflection of the respective diaphragm. A cap above the first diaphragm defines a hollow space that is connected to the hollow space below the second diaphragm.
    Type: Application
    Filed: November 9, 2009
    Publication date: June 10, 2010
    Inventors: Michaela Mitschke, Hubert Benzel
  • Publication number: 20100107774
    Abstract: Embodiments of an ultra miniature pressure probe are disclosed. The pressure probe can include a probe body, a plurality of transducer ports, and a plurality of transducers. The probe body can be a longitudinal tubular body having a front conical end. The transducer ports can be disposed about the front end of the body. The transducers can be leadless SOI transducers, each having an active deflection area associated with a semiconductor substrate. Each transducer can be in communication with a header for supporting the transducer. The header can have a thickness substantially less than the probe diameter and can comprise a flange about an edge of the header. Each of the plurality of transducer ports can define an aperture and a counter-bore, wherein each transducer is positionable in an associated transducer port with the flange of the header of the transducer being welded to the counter-bore of the transducer port.
    Type: Application
    Filed: January 13, 2010
    Publication date: May 6, 2010
    Applicant: Kulite Semiconductor Products, Inc.
    Inventor: Anthony D. KURTZ
  • Patent number: 7703329
    Abstract: There is provided a pressure sensor having: a sensor chip (30) which detects a pressure; a base plate (20 (21, 22)) which supports the sensor chip (30); and a support diaphragm (50) which is bonded to the base plate (20 (21, 22)) and supports the base plate (20 (21, 22)), wherein the pressure sensor (1) has a structure in which the support diaphragm (50) is joined to a package (10), and the sensor chip (30) and the base plate (20 (21, 22)) are supported in the package through the support diaphragm (50) alone, thereby constantly and accurately detecting a pressure without being affected by a heat stress caused due to heat from the outside.
    Type: Grant
    Filed: June 13, 2005
    Date of Patent: April 27, 2010
    Assignee: Yamatake Corporation
    Inventors: Masashi Sekine, Hidefumi Harada
  • Patent number: 7706149
    Abstract: A MEMS package includes a first board, a second board and a laminate material. The first board includes a lower metallic trace, a metallic diaphragm and a through opening. The lower metallic trace is located on the lower surface of the first board, and the metallic diaphragm is disposed on the lower metallic trace. The second board includes an upper metallic trace and a metallic electrode. The upper metallic trace is located on the upper surface of the second board, the metallic electrode is disposed on the upper metallic trace, and the metallic electrode is corresponding to the metallic diaphragm. The laminate material is disposed between the lower and upper metallic traces, and includes a hollow portion for accommodating the metallic electrode and metallic diaphragm, wherein a sensing unit is formed by the metallic electrode, the hollow portion and the metallic diaphragm, and is corresponding to the through opening.
    Type: Grant
    Filed: May 23, 2008
    Date of Patent: April 27, 2010
    Assignee: Advanced Semiconductor Engineering, Inc.
    Inventors: Hsueh An Yang, Meng Jen Wang, Wei Chung Wang, Ming Chiang Lee, Wei Pin Huang, Feng Chen Cheng
  • Patent number: 7701022
    Abstract: A semiconductor device and a method of producing the same is disclosed, in which a through hole is formed in the upper surface of a semiconductor substrate from the lower surface thereof, and an opening of a desired size is formed in a desired position on the upper surface of the substrate. A guide that functions as an etching stopper is formed in the semiconductor substrate. An opening having a width W2 is formed in the guide. The opening faces an opening in a mask used in the formation of a through hole, and the width W2 thereof is narrower than a width W4 of the opening in the mask. The direction in which etching progresses is controlled by the opening formed in the guide as etching is conducted from a lower surface of the substrate to an upper surface of the substrate, and thus deviations in the width W1 and position of an opening in the upper surface of the substrate can be controlled.
    Type: Grant
    Filed: April 30, 2003
    Date of Patent: April 20, 2010
    Assignee: Rohm Co., Ltd.
    Inventors: Noriyuki Shimoji, Masaki Takaoka
  • Publication number: 20100064818
    Abstract: A method of forming a sensor for sensing a physical property of a media. A substrate is provided having circuitry thereon including at least one electrical contact and a die is provided having disposed thereon corresponding electrical contacts and a sensing element for sensing a physical property of a media applied to said sensing element. One or more bonding ring or portions are arranged on the die. The die electrical contact(s) and bonding ring(s) can be bonded substantially simultaneously, with conductive bonding material, to the corresponding substrate electrical contact(s) and a surface of said substrate, respectively, to thereby form a sensor. The bonding ring(s) form a pressure seal. The substrate can include corresponding bonding ring(s). The die can include an ASIC for compensating temperature effects on said pressure sensor.
    Type: Application
    Filed: November 23, 2009
    Publication date: March 18, 2010
    Applicant: Honeywell International Inc.
    Inventor: Paul C. Shubert
  • Patent number: 7677109
    Abstract: A method for direct die-to-die wire bonding incorporates a pressure sense die and a programmable compensation IC die that can be mounted on a ceramic substrate. The two die can be positioned beside each other such that wire bond pads on the pressure sense die and bonding leads on the compensation IC die are in same order. The pressure sense die and the compensation IC can be connected directly with wire bonds in order to reduce the number of wire bonds and to improve reliability. The pressure sense die can be designed with multiple wire bond pad patterns in order to be utilized with different programmable compensation IC dies.
    Type: Grant
    Filed: February 27, 2008
    Date of Patent: March 16, 2010
    Assignee: Honeywell International Inc.
    Inventors: Ian Bentley, Alistair D. Bradley
  • Publication number: 20100058876
    Abstract: A semiconductor device includes a first cavity within a semiconductor substrate and a second cavity within the semiconductor substrate. The second cavity is open to an atmosphere and defines a first lamella between the first cavity and the second cavity. The semiconductor device includes a first sense element configured for sensing a pressure on the first lamella.
    Type: Application
    Filed: September 11, 2008
    Publication date: March 11, 2010
    Applicant: Infineon Technologies AG
    Inventors: Thoralf Kautzsch, Boris Binder, Dirk Meinhold, Ben Rosam, Bernd Foeste, Andreas Thamm
  • Publication number: 20100043530
    Abstract: A sensor device. One embodiment provides a first sensor having a first sensor surface. The first sensor surface is exposed to allow sensing of a first variable. A second sensor has a second sensor surface. The second sensor surface is sealed to inhibit sensing of the first variable, and a mold material is embedded the first and second sensors.
    Type: Application
    Filed: August 25, 2008
    Publication date: February 25, 2010
    Applicant: INFINEON TECHNOLOGIES AG
    Inventors: Klaus Elian, Albert Auburger
  • Patent number: 7647835
    Abstract: A pressure sensor stress isolation pedestal including a pressure sensor mounted in a housing with a circuit board. The sensor is bonded to a relatively tall pedestal. The height of the pedestal creates a stiff mounting structure that isolates the sensor from mechanical stress. The pedestal is formed by making a recess or moat-like structure around the pressure sensor in the housing that supports the sensor. Preferred sensors are MEMS type Pressure Sensors.
    Type: Grant
    Filed: September 19, 2007
    Date of Patent: January 19, 2010
    Assignee: Honeywell International Inc.
    Inventor: Jamie W. Speldrich
  • Patent number: 7647834
    Abstract: A system is disclosed for detecting an electrical sensor, the system includes a sensor signal processing circuit further comprising an input port to receive a connector including the output signal lines of the sensor, a resistor connected to the output signal line of said input port, wherein the resistor is connected to a predetermined voltage; a sensor circuit having a connector adapted to connect to the connector, wherein the sensor circuit has a resistance substantially less than the pull-resistor, and the sensor signal processing circuit detects an unconnected sensor based on the voltage applied by the resistor.
    Type: Grant
    Filed: August 1, 2005
    Date of Patent: January 19, 2010
    Assignee: CHF Solutions Inc.
    Inventors: John J. O'Mahony, Mark Gelfand, Edwin B. Merrick, Jayne B. Merrick, legal representative
  • Patent number: 7644621
    Abstract: The present invention relates to a pressure sensor. The pressure sensor includes a substrate assembly. The substrate assembly defines closed channels and includes a conductive layer. A conductive membrane extends from the substrate assembly and is spaced from the conductive layer. The conductive membrane defines a plurality of apertures. A cap extends from the substrate assembly to cover the membrane.
    Type: Grant
    Filed: July 29, 2007
    Date of Patent: January 12, 2010
    Assignee: Silverbrook Research Pty Ltd
    Inventors: Kia Silverbrook, Samuel George Mallinson
  • Publication number: 20090314096
    Abstract: A semiconductor pressure sensor for a pressure sensor device has a pressure detection element which includes a membrane made of semiconductor material, particularly silicon. The sensor includes a support having a three-dimensional body passed through by a detection passage. The detection element is made integral with a first end face of the three-dimensional body, substantially at a respective end of the detection passage. The support is configured to serve the function of a mechanical and/or hydraulic adaptor or interface, with the aim of mounting the sensor into a pressure sensor device, particularly to allow mounting the pressure sensor into a pressure sensor device configured for mounting a sensor of the type referred to as monolithic or ceramic.
    Type: Application
    Filed: June 18, 2009
    Publication date: December 24, 2009
    Applicant: ELTEK S.p.A.
    Inventor: Paolo COLOMBO
  • Patent number: 7624644
    Abstract: A semiconductor pressure sensor includes a diaphragm; a resistor provided on a top surface of the diaphragm; an insulating film formed on the diaphragm and the resistor having a penetrating part exposing a top surface of the resistor; and a wiring pattern formed from the top surface of the resistor exposed by the penetrating part to a top surface of the insulating film; wherein a distance between a first crossing part where a plane orthogonal to the top surface of the diaphragm meets a top end of a side plane of the penetrating part and a second crossing part where the plane orthogonal to the top surface of the diaphragm meets a bottom of the side plane of the penetrating part is equal or greater than a thickness of the insulating film by a factor of a square root of two.
    Type: Grant
    Filed: August 22, 2008
    Date of Patent: December 1, 2009
    Assignee: Mitsumi Electric Co., Ltd.
    Inventor: Yasuhide Fujioka
  • Patent number: 7617734
    Abstract: A pressure sensor assembly is provided for fitting within the valve stem of a vehicle tire. The assembly comprises a substrate assembly defining a plurality of holes. A pressure sensor and a temperature compensation sensor are mounted to the substrate assembly. Each sensor includes a deflectable membrane defining a first chamber and a cap mounted to the membrane to form a second chamber. A cover is provided for engaging with the pressure sensor and the temperature compensation sensor to define an active chamber and reference chamber respectively. The active chamber is exposed to tire pressure when the pressure sensor assembly is fitted within the valve stem whereas the reference chamber is sealed from tire pressure.
    Type: Grant
    Filed: October 7, 2008
    Date of Patent: November 17, 2009
    Assignee: Silverbrook Research Pty Ltd
    Inventors: Kia Silverbrook, Samuel George Mallinson
  • Patent number: 7610812
    Abstract: A semiconductor chip for use in fabricating pressure transducers, including: a semiconductor wafer having a top and a bottom surface, a layer of an insulating material formed on the top surface, the bottom surface having at least two recesses of substantially equal dimensions and spaced apart, the recesses providing first and second substantially equal thin active areas, which areas deflect upon application to a force applied to the top surface, a first plurality of piezoresistive devices arranged in a given pattern and positioned on the insulating material and located within the first area, a second equal plurality of piezoresistive devices arranged in the identical pattern and located on the insulating material within the second active area, first connecting means for connecting the first plurality of piezoresistive devices in a first array, second connecting means for connecting the second plurality of piezoresistive devices in a second array corresponding to the first array.
    Type: Grant
    Filed: March 9, 2007
    Date of Patent: November 3, 2009
    Assignee: Kulite Semiconductor Products, Inc.
    Inventors: Anthony D. Kurtz, Alexander A. Ned
  • Publication number: 20090266170
    Abstract: A pressure sensor which includes: a semiconductor substrate; a first cavity portion that spreads out approximately parallel with one surface of the semiconductor substrate in the interior of a central region thereof; a diaphragm portion of a thin plate shape that is positioned on one side of the first cavity portion; a pressure sensitive element that is disposed on the diaphragm; and a bump that is disposed in an outer edge region of the one surface of the semiconductor substrate that excludes the diaphragm portion and is electrically connected with the pressure sensitive element, wherein a second cavity portion is disposed in at least one portion of the outer edge region in the interior of the semiconductor substrate and is closed with respect to the one surface of the semiconductor substrate.
    Type: Application
    Filed: April 20, 2009
    Publication date: October 29, 2009
    Applicant: FUJIKURA LTD.
    Inventors: Sinichi MURASHIGE, SATOSHI YAMAMOTO
  • Publication number: 20090266171
    Abstract: A pressure sensor module includes a pressure sensor, a bump, and a laminated substrate. The pressure sensor includes a semiconductor substrate; a cavity; a pressure-sensitive element; and a conductive section. The cavity is disposed inside the semiconductor substrate such that a thin-plate region of the semiconductor substrate is provided and the thin-plate region being defined as a diaphragm. The pressure-sensitive element is arranged at the diaphragm. The conductive section is electrically connected to the pressure-sensitive element and disposed on the face of the semiconductor substrate at a region excluding the diaphragm. The bump is electrically connected to the conductive section. The laminated substrate includes a wiring base material electrically connected to the pressure sensor via the bump. The wiring base material is disposed inside the laminated substrate. A face of the wiring base material is electrically connected to the bump and has an exposed area from the laminated substrate.
    Type: Application
    Filed: April 22, 2009
    Publication date: October 29, 2009
    Applicant: Fujikura Ltd.
    Inventors: Satoshi Yamamoto, Hirokazu Hashimoto
  • Patent number: 7607355
    Abstract: A semiconductor device is equipped with a semiconductor sensor chip for detecting pressure variations that is arranged inside of a hollow cavity of a housing, wherein an opening is formed in a prescribed region of the housing, which is not positioned opposite to the semiconductor sensor chip, so as to allow the hollow cavity to communicate with an external space. The opening is formed using at least one through-hole having a thin slit-like shape. Alternatively, the opening is formed using plural through-holes each having a desired shape such as a thin slit-like shape, a circular shape, and a sectorial shape. Thus, it is possible to reduce negative influences due to environmental factors such as dust and sunlight with respect to the semiconductor sensor chip.
    Type: Grant
    Filed: February 11, 2008
    Date of Patent: October 27, 2009
    Assignee: Yamaha Corporation
    Inventors: Kenichi Shirasaka, Yukitoshi Suzuki
  • Patent number: 7607356
    Abstract: A Pirani vacuum gauge in which dependency of temperature of a filament on variation of gas pressure is raised and the gas pressure can be measured with high accuracy. The Pirani vacuum gauge includes a cylindrical body 2 in which the interior communicates with a space to be measured for pressure; a filament 1 enclosed in the cylindrical body 2; and a pipe 7 surrounding the filament 1 in the cylindrical body, the least distance between the facing inner walls of the pipe being equal to less than 6 mm and the pipe 7 covering more than 80% of the length of the filament 1.
    Type: Grant
    Filed: November 7, 2005
    Date of Patent: October 27, 2009
    Assignee: ULVAC, Inc.
    Inventors: Takeshi Miyashita, Naoki Takahashi
  • Patent number: 7603908
    Abstract: A semiconductor pressure sensor is provided with a semiconductor pressure sensor part that converts a pressure to an electrical signal, a sensor module in which said semiconductor pressure sensor part and a terminal of which part is extended to the outside are insert-molded with a first resin, and an outer case in which said sensor module is contained, and said sensor module is further insert-molded with a second resin to form a connector portion, and the semiconductor pressure sensor is characterized in that the exposed portion of the sensor module from the second resin, and the boundary between the exposed portion of the sensor module and the second resin are covered with an adhesive.
    Type: Grant
    Filed: March 11, 2008
    Date of Patent: October 20, 2009
    Assignee: Mitsubishi Electric Corporation
    Inventors: Shinsuke Asada, Hiroshi Nakamura, Masaaki Taruya
  • Publication number: 20090255344
    Abstract: For a pressure sensor module comprising a printed circuit board and a pressure cell, wherein the pressure cell has a measuring opening, and the pressure cell is encapsulated by injection molding compound in such a manner that the measuring opening is kept open, the pressure cell, as viewed from the measuring opening, is attached on the rear side of the printed circuit board. The printed circuit board has a recess in the area of the measuring opening, and the injection molding compound encloses the attachment area of the pressure cell on the printed circuit board. Thereby, the use of different adhesives, also soft adhesives, for the connection of the pressure cell with the printed circuit board is possible without this attachment area being attacked by the surrounding media.
    Type: Application
    Filed: April 7, 2009
    Publication date: October 15, 2009
    Inventors: Joerg Stuermann, Thomas Niemann
  • Patent number: 7600433
    Abstract: A pressure sensor comprises a housing, a housing socket and a pressure port which projects into the housing and which is made of a lead free material. The pressure sensor exhibits a pressure sensing element, which is adhesively cemented on the pressure port, so that a passage, located in the pressure port, is sealed on one side. In one region, the pressure port exhibits a surface roughness and is provided with an adhesion promoting coat. In this region, the pressure sensing element is connected by adhesive cement to the pressure port.
    Type: Grant
    Filed: February 18, 2008
    Date of Patent: October 13, 2009
    Assignee: Silicon Micro Sensors GmbH
    Inventors: Jens Koehler, Lars Petersen
  • Patent number: 7594440
    Abstract: A mechanical-to-electrical sensing structure has first and second movable blocks formed in a handle layer. A first hinge is coupled to the first and second movable blocks and configured to resist loads other than flexing of the first hinge. The first hinge is formed in the handle layer. A first gauge is separated from the first hinge and aligned to provide that a moment tending to rotate one of the first or second blocks relative to the other about the first hinge applies a tensile or compressive force along a length of the first gauge. The first gauge is formed from a device layer with an oxide between the device and handle layers. The sensing structure is made from an SOI wafer, and the first gauge is protected during an etching away of handle material beneath the first gauge by an oxide between the device and handle layers and an etch-resistant oxide or nitride on exterior surfaces of the first gauge.
    Type: Grant
    Filed: October 5, 2006
    Date of Patent: September 29, 2009
    Assignee: Endevco Corporation
    Inventor: Leslie Bruce Wilner
  • Publication number: 20090235753
    Abstract: A pressure sensor module of the invention includes a pressure sensor and a laminar substrate. Electrodes are arranged in the vicinity of a diaphragm portion of the pressure sensor. In the laminar substrate, a plurality of substrates are laminated, and the laminar substrate incorporates the pressure sensor. One face of the diaphragm portion is exposed by a space portion. According to the invention, it is possible to provide a pressure sensor module which facilitates smaller and thinner sizes, and which enables high-density packaging.
    Type: Application
    Filed: May 28, 2009
    Publication date: September 24, 2009
    Applicant: Fujikura Ltd.
    Inventors: Satoshi YAMAMOTO, Mikio Hashimoto
  • Publication number: 20090235754
    Abstract: An encapsulation composition for pressure signal transmission including a flexible and low modulus epoxy resin as a substance in combination with plastic balls with pressure signal transmission properties as filler is provided. Therefore, the pressure signal is transmitted by utilizing the property of easy deformation of the flexible epoxy resin under pressure. And the effect of signal transmission is enhanced by the contact between plastic balls. The encapsulation composition is used in a sensor for transmitting pressure signals. The encapsulation composition is hydrophobic, so an electronic device of the sensor can be protected against moisture or water to extend its lifetime. Compared with traditional sensors using liquid for transmitting pressure signal, this sensor using solid encapsulation composition has advantages such as easy production and processing.
    Type: Application
    Filed: June 3, 2009
    Publication date: September 24, 2009
    Applicant: Industrial Technology Research Institute
    Inventors: Feng-Po Tseng, Kuo-Chan Chiou, Tzong-Ming Lee, Syh-Yuh Cheng, Chih-Wei Hsu
  • Patent number: 7584666
    Abstract: A pressure sensor includes at least one cantilever formed on an upper surface of a silicon substrate, a piezoresistor formed on a fixed end of the cantilever, and a metal wire and an electrode pad connected to both ends of the piezoresistor, wherein a stopper that limits a deformation of a free end of the cantilever is formed below the cantilever.
    Type: Grant
    Filed: January 3, 2008
    Date of Patent: September 8, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jong-pal Kim, Kun-soo Shin, Sang-kon Bae, Youn-ho Kim
  • Patent number: 7581447
    Abstract: The invention provides for a temperature compensating pressure sensing arrangement. The arrangement includes a substrate having sealed channels on which is deposited a CMOS layer, with a conductive layer and a passivation layer deposited on the CMOS layer. The arrangement also includes a conductive active membrane spaced from the conductive layer to form an active chamber, and a conductive reference membrane spaced from the conductive layer to form a sealed reference chamber. Further included is a cap which covers the membranes, said cap exposing the active membrane to an outside fluid pressure. The active membrane further defines a foot which is located between the substrate and cap with a leg extending away from the substrate and terminating in a substantially planar deflectable portion, which deflects due to differential pressure stresses so that an active capacitance is developed between the active membrane and the conductive layer depending on the electrical permittivity e of the fluid.
    Type: Grant
    Filed: November 18, 2008
    Date of Patent: September 1, 2009
    Assignee: Silverbrook Research Pty Ltd
    Inventors: Kia Silverbrook, Samuel George Mallinson
  • Patent number: 7578196
    Abstract: In a pressure sensor with double measuring scale: a monolithic body of semiconductor material has a first main surface, a bulk region and a sensitive portion upon which pressure acts; a cavity is formed in the monolithic body and is separated from the first main surface by a membrane, which is flexible and deformable as a function of the pressure, and is arranged inside the sensitive portion and is surrounded by the bulk region; a low-pressure detecting element of the piezoresistive type, sensitive to first values of pressure, is integrated in the membrane and has a variable resistance as a function of the deformation of the membrane; in addition, a high-pressure detecting element, also of a piezoresistive type, is formed in the bulk region inside the sensitive portion and has a variable resistance as a function of the pressure. The high-pressure detecting element is sensitive to second values of pressure.
    Type: Grant
    Filed: January 22, 2008
    Date of Patent: August 25, 2009
    Assignee: STMicroelectronics S.r.l.
    Inventors: Giulio Riccoti, Marco Morelli, Luigi Della Torre, Andrea Lorenzo Vitali, Ubaldo Mastromatteo
  • Publication number: 20090199648
    Abstract: A transistor-type pressure sensor is provided, having an upper and a lower substrates, a source/drain formed on the lower substrate and separated from each other, a channel layer formed between and on the source/drain, a dielectric layer and a gate. The gate is substantially formed between the source and the drain. The surface of the gate, being in contact with the dielectric layer, has a stepped surface profile, so that the channel length/width ratio can be changed due to the pressure sensed by the pressure sensor.
    Type: Application
    Filed: August 11, 2008
    Publication date: August 13, 2009
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chao-Feng Sung, Chih-Wei Chu, Yuh-Zheng Lee, Chao-Kai Cheng
  • Patent number: 7568395
    Abstract: The present invention relates to a pressure sensor. The pressure sensor includes a substrate assembly. The substrate assembly defines sealed channels and includes a conductive layer. A conductive membrane extends from the substrate assembly and is spaced from the conductive layer to form a sealed reference chamber. A cap defines apertures. The cap extends from the substrate assembly to cover the membrane and thereby form an apertured chamber.
    Type: Grant
    Filed: July 29, 2007
    Date of Patent: August 4, 2009
    Assignee: Silverbrook Research Pty Ltd
    Inventors: Kia Silverbrook, Samuel George Mallinson
  • Patent number: 7559247
    Abstract: A pressure sensor for detecting pressure includes: a metallic diaphragm for receiving the pressure; four strain gauges providing a Wheatstone bridge, wherein each strain gauge outputs an electric signal corresponding to deformation of the diaphragm when the diaphragm is deformed by the pressure; and four semiconductor chips corresponding to four strain gauges, wherein each strain gauge is disposed in the semiconductor chip. Each semiconductor chip is mounted on the diaphragm.
    Type: Grant
    Filed: July 12, 2007
    Date of Patent: July 14, 2009
    Assignee: DENSO CORPORATION
    Inventors: Kiyoshi Otsuka, Osamu Itoh, Hiroshi Uchigashima, Kazuhiro Yoshino, Keiji Horiba, Tetsuya Ogawa
  • Patent number: 7555956
    Abstract: A micromechanical device and a method for producing this device are provided, two sensor patterns being provided in the semiconductor material to record two mechanical variables, in particular the pressure and the acceleration. The functionality of both sensor patterns is based on the same predefined converter principle.
    Type: Grant
    Filed: July 13, 2006
    Date of Patent: July 7, 2009
    Assignee: Robert Bosch GmbH
    Inventors: Hubert Benzel, Christoph Schelling
  • Publication number: 20090165564
    Abstract: For example, to adjust an offset of a pressure sensor, there are provided an external resistor RE and an internal resistor circuit that is connected to both ends of RE and formed in a semiconductor chip such as a processor. The internal resistor circuit includes N pieces of internal resistors RI connected in series between both ends of RE, and (N+1) pieces of switches selecting one of voltages of respective nodes of the serial resistors and outputs the same as a signal. RE has a high absolute value precision of, e.g., several ten ohms to several hundred ohms, and RI has a high relative value precision of, e.g., several kilo-ohms. Therefore, an offset adjustment range is decided at a high absolute value precision mainly by RE, and with regard to the arrangement resolution, a high precision can be obtained along with the relative value precision of the RI.
    Type: Application
    Filed: December 23, 2008
    Publication date: July 2, 2009
    Inventors: Tadashi MATSUSHIMA, Masaru SUGAI, Chung Wen Hung, Yuji SHIMIZU
  • Patent number: 7549343
    Abstract: A sensor system for measuring the pressure in the combustion chamber of an internal combustion engine, by the use of which a high measuring accuracy may be achieved, based on high measuring sensitivity and great thermal stability. In addition, the construction of the sensor system makes possible great system flexibility, and particularly very space-saving installation in the combustion chamber of an internal combustion engine.
    Type: Grant
    Filed: March 12, 2008
    Date of Patent: June 23, 2009
    Assignee: Robert Bosch GmbH
    Inventors: Viacheslav Bekker, Christian Doering, Gottfried Flik, Sven Zinober
  • Patent number: 7549344
    Abstract: A pressure sensor package of the present invention includes a pressure sensor including a cavity disposed within a semiconductor substrate, wherein a region of the substrate above the cavity comprises a diaphragm section; a plurality of pressure-sensitive elements, wherein at least of portion of each pressure-sensitive element is disposed on the diaphragm section; and a plurality of conductive portions laterally spaced from the cavity and electrically connected to the pressure sensitive elements, a plurality of electrically conductive bumps arranged on the conductive portions and electrically connected to the conductive portions, wherein a total thickness D1 of the semiconductor substrate, a thickness D2 of the diaphragm section, a thickness D3 of the cavity, and a thickness D4=D1?(D2+D3) satisfy the relationships: (D2+D3) in a range of approximately 5-20 ?m, and D1 not less than about 100 ?m.
    Type: Grant
    Filed: July 17, 2008
    Date of Patent: June 23, 2009
    Assignee: Fujikura Ltd.
    Inventors: Satoshi Yamamoto, Mikio Hashimoto, Takanao Suzuki
  • Patent number: 7549342
    Abstract: A capacitative pressure sensor (30) for harsh environments such as vehicle tires. The sensor has two opposing electrodes (36 and 50). One electrode is a membrane (50) that extends between fluid at a reference pressure and fluid at the pressure to be sensed. In use, the flexible membrane (50) deflects due to pressure differentials between the reference pressure and the fluid pressure. Associated circuitry converts the deflection into a signal indicative of the pressure to be sensed. The membrane is a laminate at least partially formed from a transition metal nitride because transition metal nitrides are a metal ceramics with high yield strength and metallic bonding that makes it suitable for use in extreme environments. They can also readily include an oxidizing component such as aluminium so that the membrane form a passivating surface oxide layer to protect it from oxidative failure.
    Type: Grant
    Filed: October 5, 2006
    Date of Patent: June 23, 2009
    Assignee: Silverbrook Research Pty Ltd
    Inventors: Kia Silverbrook, Samuel George Mallinson
  • Publication number: 20090151451
    Abstract: A method for manufacturing a micromechanical component is described, the micromechanical component having a medium. The medium has settable and changeable volume-elastic properties and generally completely encloses a sensor module and/or a module housing. The medium preferably has a low-pass response.
    Type: Application
    Filed: November 13, 2008
    Publication date: June 18, 2009
    Inventors: Wolf-Ingo Ratzel, Christian Ohl, Juergen Kurle
  • Publication number: 20090142873
    Abstract: A method for producing a sensor array including a monolithically integrated circuit is described as well as a sensor array. This sensor array has a micromechanical sensor structure, in which a first partial structure which is associated with the sensor structure is produced at the same time as a second partial structure which is associated with the circuit, a process variation of the first partial structure being performed in order to adjust a structure property of the sensor structure while the second partial structure remains the same.
    Type: Application
    Filed: September 25, 2006
    Publication date: June 4, 2009
    Inventors: Hubert Benzel, Simon Armbruster
  • Patent number: 7540198
    Abstract: It is an object of the present invention to provide a small, yet high sensitivity semiconductor device. A semiconductor pressure sensor 1 includes an SOI substrate 2 on which a diaphragm 3 is formed and four piezo resistor elements R1 to R4 provided on the SOI substrate 2. Of the piezo resistor elements R1 to R4, two mutually facing piezo resistor elements R1 to R4 are arranged across the inside and outside of the diaphragm 3 so as to satisfy a relationship of 0.5<Leff/L<1, where L is the overall length and Leff is the length from the inside to edge of the diaphragm 3.
    Type: Grant
    Filed: June 13, 2005
    Date of Patent: June 2, 2009
    Assignee: Canon Kabushiki Kaisha
    Inventor: Takeshi Ichikawa
  • Patent number: 7536917
    Abstract: A pressure sensor comprises: a case body including a pressure introduction port; a sensor chip including a top surface, a bottom surface, a sensing member disposed on the top surface and a concave member disposed on the bottom surface; a ceramic substrate including a front surface, a rear surface, a front opening disposed on the front surface and a rear opening disposed on the rear surface; and the gel member. The sensor chip is disposed on the front opening. The case body accommodates the ceramic substrate. The rear opening is coupled with the port. The gel member is disposed in the front and rear openings, and covers the concave member. The concave member receives a pressure of a pressure medium, which is introduced in the port, via the gel member. The sensing member detects the pressure.
    Type: Grant
    Filed: January 17, 2008
    Date of Patent: May 26, 2009
    Assignee: DENSO CORPORATION
    Inventor: Hironobu Baba
  • Publication number: 20090126499
    Abstract: A pressure probe includes a longitudinal tubular housing symmetrically disposed about a central axis and having an ultra miniature conical front end and an opened back end. A plurality of aperture ports having an opening are disposed about the front end. A plurality of ultra small leadless transducers has a central active deflecting area in a semiconductor substrate, and a layer of oxide on a bottom surface. At least one sensor network is disposed within the active area on the oxide layer. A glass contact wafer is bonded to the non-deflecting portion of sensing network and has a number of apertures surrounding the active area suitable for interconnection with header. A header encloses each transducer and is of a shape and size to be positioned in an associated aperture port of the probe housing. At least one lead is coupled to a header pin extending from bottom of the aperture and directed through the bottom opening into the hollow of the probe housing.
    Type: Application
    Filed: December 3, 2008
    Publication date: May 21, 2009
    Applicant: Kulite Semiconductor Products, Inc.
    Inventor: Anthony D. Kurtz
  • Patent number: 7533573
    Abstract: A pressure sensor for sensing a fluid pressure comprising: a first chamber including a first conductive membrane, wherein a fluid is sealed within the first chamber at a reference pressure such that the first conductive membrane deflects from pressure differences between the reference and the fluid pressure; a second chamber including a second conductive membrane sealed from the fluid pressure, wherein the second membrane deflects in response to a change in temperature which the pressure sensor is exposed thereto; and a circuit in electrical communication with the first and second conductive membrane, the circuit being configured to obtain a first and second signal from the first and second conductive membranes respectively, the first and second signals being indicative of the deflection of the first and second conductive membranes, wherein the circuit adjusts the first signal by the second signal to generate an output signal indicative of the fluid pressure.
    Type: Grant
    Filed: February 14, 2008
    Date of Patent: May 19, 2009
    Assignee: Silverbrook Research Pty Ltd
    Inventors: Kia Silverbrook, Samuel George Mallinson
  • Patent number: 7530276
    Abstract: This invention aims to realize reduction in size without impairing measurement accuracy or connection reliability in a semiconductor pressure sensor in which a glass substrate is adhered to a rear-surface side of a pressure-sensitive chip in which piezoresistive pressure-sensitive gauges have been formed on a front surface of a diaphragm formed of a silicon single crystal to form a space between a rear surface of the diaphragm and the glass substrate, for measuring a pressure applied to the front surface of the diaphragm with reference to a pressure of the first space as a standard pressure. In order to achieve this object, the semiconductor pressure sensor includes resinous projections formed on pressure-sensitive gauge electrodes disposed on a front surface of the pressure-sensitive chip or on wiring from the pressure-sensitive gauge electrodes and bumps formed so as to partially or entirely cover the resinous projections.
    Type: Grant
    Filed: August 22, 2007
    Date of Patent: May 12, 2009
    Assignee: Fujikura Ltd.
    Inventors: Masakazu Sato, Tatsuya Ito, Hideto Noguchi
  • Patent number: 7526963
    Abstract: A pressure sensor includes a pressure detecting element for detecting a pressure, a circuit board having an electrical circuit to be connected to the pressure detecting element, and a housing having a housing member and a cover. The housing member partitions at least a part of a first space for accommodating the pressure detecting element and at least a part of a second space for accommodating the circuit board such that the first space and the second space are separated from each other. The cover partitions at least a part of a remainder of each of the first space and the second space.
    Type: Grant
    Filed: May 23, 2007
    Date of Patent: May 5, 2009
    Assignee: Denso Corporation
    Inventors: Shingo Wanami, Satoru Takehara, Kouji Uchida, Taiki Katsu
  • Patent number: 7520173
    Abstract: Provided are an interdigitated electrode (IDE) for an electronic device, which includes a plurality of anodes and a plurality of cathodes arranged radially in an alternating fashion for electrical insulation from one another, and an electronic device using the same. The IDE in which the anodes and the cathodes are arranged radially in an alternating fashion is fabricated and applied to the electronic device, so that the entire fabrication process can be simplified compared to that of a typical electronic device in which an upper electrode is different from a lower electrode. Also, circular or polygonal IDEs can be applied to systems that are driven or measure values on their central axes, thereby enhancing the performance and efficiency of the systems. Furthermore, the circular or polygonal IDEs can be employed in systems such as acoustic sensors, pressure sensors, micro-speakers, biological sensors, and acceleration sensors, so that the structure and operation of the systems can be simplified.
    Type: Grant
    Filed: October 1, 2007
    Date of Patent: April 21, 2009
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Sung Q Lee, Hye Jin Kim, Kang Ho Park, Jong Dae Kim
  • Patent number: 7493823
    Abstract: A semiconductor-based pressure sensor adapted for enhanced operation with controls electronics includes a pressure transducer having an output formed on a silicon die and an amplifier having an input and an output and fabricated on the silicon die next to the pressure transducer. The pressure transducer's output is provided to the amplifier's input via electrical connection. Output from the amplifier is connectable to a controller such as an ASIC.
    Type: Grant
    Filed: June 16, 2006
    Date of Patent: February 24, 2009
    Assignee: Honeywell International Inc.
    Inventors: Carl E. Stewart, Peter G. Hancock
  • Publication number: 20090035556
    Abstract: The invention provides an electrical conductive composite material having superior thermal and electrical conductive performances. The electrical conductive composite material can be obtained by curing a mixture of a liquid elastic polymeric material and a magnetic compound fluid, which is prepared by dispersing Ni powder and Cu powder in a magnetic fluid, in a magnetic field. In the electrical conductive composite material, network cluster is formed by aggregation of Cu particles and Ni particles.
    Type: Application
    Filed: August 1, 2008
    Publication date: February 5, 2009
    Inventors: Kunio Shimada, Takayuki Takahashi, Yoshihito Ozawa, Kazuhiko Fukuda, Yaoyang Zheng, Seong Hee Jeong
  • Patent number: 7484418
    Abstract: A pressure probe includes a longitudinal tubular housing symmetrically disposed about a central axis and having an ultra miniature conical front end and an opened back end. A plurality of aperture ports having an opening are disposed about the front end. A plurality of ultra small leadless transducers has a central active deflecting area in a semiconductor substrate, and a layer of oxide on a bottom surface. At least one sensor network is disposed within the active area on the oxide layer. A glass contact wafer is bonded to the non-deflecting portion of sensing network and has a number of apertures surrounding the active area suitable for interconnection with header. A header encloses each transducer and is of a shape and size to be positioned in an associated aperture port of the probe housing. At least one lead is coupled to a header pin extending from bottom of the aperture and directed through the bottom opening into the hollow of the probe housing.
    Type: Grant
    Filed: November 6, 2007
    Date of Patent: February 3, 2009
    Assignee: Kulite Semiconductor Products, Inc.
    Inventor: Anthony D. Kurtz