Abstract: A micro-electromechanical (MEMS) device functioning as a pressure sensor-that includes plurality of metal oxide semiconductor (MOS) transistors supporting on a membrane formed by an MEMS process for measuring a resistance change induced by a pressure change on the MOS transistors through the membrane for sensing the pressure change.

Abstract: A pressure sensor comprises: a case body including a pressure introduction port; a sensor chip including a top surface, a bottom surface, a sensing member disposed on the top surface and a concave member disposed on the bottom surface; a ceramic substrate including a front surface, a rear surface, a front opening disposed on the front surface and a rear opening disposed on the rear surface; and the gel member. The sensor chip is disposed on the front opening. The case body accommodates the ceramic substrate. The rear opening is coupled with the port. The gel member is disposed in the front and rear openings, and covers the concave member. The concave member receives a pressure of a pressure medium, which is introduced in the port, via the gel member. The sensing member detects the pressure.

Abstract: A semiconductor pressure sensor is provided with a semiconductor pressure sensor part that converts a pressure to an electrical signal, a sensor module in which said semiconductor pressure sensor part and a terminal of which part is extended to the outside are insert-molded with a first resin, and an outer case in which said sensor module is contained, and said sensor module is further insert-molded with a second resin to form a connector portion, and the semiconductor pressure sensor is characterized in that the exposed portion of the sensor module from the second resin, and the boundary between the exposed portion of the sensor module and the second resin are covered with an adhesive.

Abstract: A method for making a pressure sensor including the steps of providing a substrate and forming or locating a pressure sensing component on the substrate. The method further includes the step of, after the forming or locating step, etching a cavity in the substrate below the pressure sensing component to define a diaphragm above the cavity with the pressure sensing component located on the diaphragm. The pressure sensing component includes an electrically conductive electron gas which changes its electrical resistance thereacross upon movement of the diaphragm.

Abstract: This invention aims to realize reduction in size without impairing measurement accuracy or connection reliability in a semiconductor pressure sensor in which a glass substrate is adhered to a rear-surface side of a pressure-sensitive chip in which piezoresistive pressure-sensitive gauges have been formed on a front surface of a diaphragm formed of a silicon single crystal to form a space between a rear surface of the diaphragm and the glass substrate, for measuring a pressure applied to the front surface of the diaphragm with reference to a pressure of the first space as a standard pressure. In order to achieve this object, the semiconductor pressure sensor includes resinous projections formed on pressure-sensitive gauge electrodes disposed on a front surface of the pressure-sensitive chip or on wiring from the pressure-sensitive gauge electrodes and bumps formed so as to partially or entirely cover the resinous projections.

Abstract: A piezoresistive pressure and/or strain sensor micro-machined primarily from plastic and/or glass. In one illustrative embodiment, the piezoresistive pressure sensor is formed on a polymer substrate. A first selectively implanted region is provided in the polymer substrate to create a piezoresistive region in the polymer substrate. A second selectively implanted region is then provided in at least part of the first selectively implanted region to modulate the electrical conductivity of the first selectively implanted region. The illustrative sensor may be selectively implanted with, for example, nitrogen to create the piezoresistive region, and boron to modulate the electrical conductivity of the piezoresistive region. Phosphorus or any other suitable material may also be used to modulate the electrical conductivity of the piezoresistive region, as desired.

Abstract: The present invention aims at providing a pressure sensor having excellent reliability in sealing a pressure reference chamber and a method for manufacturing the pressure sensor. A movable electrode is formed on an opposing surface side of a diaphragm formed on a pressure-receiving substrate, and an opposing electrode is formed on a region opposing the movable electrode on an opposing substrate. From the movable electrode, a conductive film, and a terminal wire on an inner surface of a through-hole are arranged as conductive wires (lead wires). In addition, from the opposing electrode, a lead wire, a conductive film opposing the lead wire and constructing a contact point, a conductive film and a terminal wire of a castellation are arranged as conductive wires. The pressure-receiving substrate and the opposing substrate are anodically bonded together via the conductive films and, and a specific region including the opposing surface side of the diaphragm is sealed.

Abstract: A pressure sensor system for measuring the pressure of a corrosive media includes a silicon plate forming a diaphragm and a glass plate or ring bonded to said silicon plate with an opening over the diaphragm. The diaphragm has resistive areas of different orientations to provide first resistive areas which have increased resistance with diaphragm deflection, and other areas which have decreased or little change in resistance with diaphragm deflection. The resistive areas may be formed by doping the silicon plate. The resistive areas have broad doped connectors extending outward to areas beyond the seal between the glass plate or ring, to wire bond areas on the silicon plate. Accordingly, the wire bond pads are not exposed to the corrosive media.

Abstract: A piezoresistive device is provided for sensing mechanical input and converts mechanical movement of at least two relatively movable parts into an electrical output. A silicon substrate is provided that is oriented in the (100) plane and has an n-type impurity. A gap extends across a portion of the substrate. The gap defines the at least two relatively moveable parts. A flexible cross-section connects the at least two relatively moveable parts. The cross-section is made of the same material as the substrate. At least one strain sensitive element is provided on a surface of the silicon substrate, is aligned in a [110] direction and includes a p-type impurity. The strain sensitive element has two end portions interconnected by an intermediate neck portion. The neck portion is supported on a structure that concentrates strain. The structure extends across the gap and has vertical walls that extend to the cross-section in the gap. The structure is made of the same material as the substrate.

Abstract: A semiconductor sensor component including protected feeders and a method for the production thereof are disclosed. The semiconductor component encompasses a sensor chip with a sensor area. The sensor chip is disposed in a two-part housing that accommodates the sensor chip in a bottom housing part. A seal that surrounds the sensor area is arranged between the bottom housing part and a top housing part. The seal, in at least one embodiment, also extends across the feeders, wherefore the feeders are configured as flat printed metal-containing strip conductors which adhere to the bottom housing part, the sensor chip, and a transition zone that is made of different materials.

Abstract: In a pressure switch, a joint coupling holder is installed in a case of a housing through an opening, and a joint coupling, to which piping is connected, is connected to the joint coupling holder. The joint coupling holder includes a protective wall therein, which is arranged on a straight line with a detector that is accommodated inside the housing at a central portion of a through hole. In addition, a pressure fluid, which is introduced to the detector through a conduit of the joint coupling, flows in a bypassing manner through a pair of communication openings while averting the protective wall.

Abstract: A pressure sensor (30) for sensing a fluid pressure in harsh environments such as the air pressure in a tire. The sensor has a dual wafer construction with a first wafer substrate (32) that has a cavity extending from its front side to the opposing back side. A flexible membrane (50) seals the cavity at the front side and a second wafer (31) seals the cavity at the back side of the first wafer (32) to form a chamber (58) containing a fluid at a reference pressure. The flexible membrane (50) deflects due to pressure differentials between the reference pressure and the fluid pressure and associated circuitry (34) for converts the deflection of the flexible membrane (50) into an output signal indicative of the fluid pressure. The second wafer (31) is wafer bonded to the first wafer substrate (32) as wafer bonding offers an effective non-adhesive solution. It provides a hermetic seal with only minor changes to the fabrication procedure.

Abstract: A sensor hard to break and capable of improving sensitivity is obtained. This sensor comprises an electrode plate and a diaphragm, opposed to the electrode plate, including a first elastic film arranged on a central portion and a second elastic film, arranged at least on a peripheral portion of the first elastic film, made of a material having a lower elastic modulus than the first elastic film.

Abstract: A lower capacitive electrode and a capacitive electrode of an opposite substrate are provided to mutually facing surfaces of a TFT substrate and the opposite substrate, respectively; and a seal member is provided to the peripheral part of both substrates. The seal member creates a predetermined gap between the substrates, and the surrounded space is sealed by the seal member. A pressure sensor measures pressure applied to the substrates based on variations in capacitance between the lower capacitive electrode and the facing-substrate capacitive electrode. An acceleration sensor is incorporated into the TFT substrate within the pressure sensor. The presence of the acceleration sensor inside the pressure sensor thereby eliminates the need for a separate pressure sensor and acceleration sensor, and allows a pressure sensor that improves the moisture resistance of the acceleration sensor to be provided.

Abstract: A semiconductor sensor for improving manufacturing productivity. Opposing electrodes, or a diaphragm electrode and a fixed electrode, form an electrostatic capacity sensing semiconductor microphone on a microphone chip. A through electrode is formed on the microphone chip by a conductor extending between the upper and lower surfaces of the semiconductor substrate. The through electrode directly and electrically connects a MEMS configuration formed by the diaphragm electrode to the wiring of a printed wiring board without using wire bonding.

Abstract: A pressure sensing system formed in a monolithic semiconductor substrate. The pressure sensing system comprises a pressure sensing device formed on the monolithic semiconductor substrate. The pressure sensing device is adapted to be disposed in an environment for developing an electrical pressure signal corresponding to the pressure in the environment. The system includes driver circuitry formed in the monolithic semiconductor substrate. The driver circuitry is responsive to input electrical signal for generating an output pressure signal. A conductive interconnect structure formed in the monolithic semiconductor substrate to electrically connects the pressure sensing device to the driver circuitry such that electrical pressure signals developed by the pressure sensing device are provided as input electrical signals to the driver circuitry.

Abstract: A pressure sensor device includes a pressure sensor cell that includes a sensor chip having a diaphragm with piezo-resistors, an amplifying circuit, and various adjusting circuits, and a base member to which the sensor chip is joined, with the diaphragm facing a through hole of the base member. The base member and a metallic member are joined together with a joining member so that their respective through holes communicate with each other. A protective film or filler covers the joining member between the base member and the metallic pipe member. The metallic pipe member is bonded to a resin case, and a signal terminal of the resin case and the pressure sensor chip are electrically connected together by wire bonding, thus forming a pressure sensor cell. The metallic pipe member protrudes beyond an end face of the resin case to support load.

Abstract: A pressure sensor (30) for environments with wide ranging temperatures such as vehicle tires. The sensor has a conductive sensor membrane (53) exposed to the fluid pressure to be sensed, and a similarly conductive reference membrane subject to a predetermined pressure difference. Both membranes are connected to circuitry that converts the deflection in the sensor membrane into an output signal indicative of the pressure difference across the sensor membrane, and converts the deflection of the reference membrane into a thermal expansion compensation value used to adjust the output signal in response to temperature variations in the pressure sensor's environment.

Abstract: A device for measuring pressure, in particular for measuring high pressure, is provided, having a pressure sensor situated in a sensor housing, the sensor housing having a first sensor housing part provided with a pressure connecting piece and a second sensor housing part provided with an electric terminal. To reduce the manufacturing cost, the second sensor housing part is attached to the first sensor housing part by a connecting part situated between the first sensor housing part and the second sensor housing part, it being possible for the connecting part to be manufactured as a simple punch bent part or thin-walled tubular part, for example.

Abstract: An ultra high temperature hermetically protected transducer includes a sensor chip having an active area upon which is deposited piezoresistive sensing elements. The elements are located on the top surface of the silicon wafer chip and have leads and terminals extending from the active area of the chip. The active area is surrounded with an extending rim or frame. The active area is coated with an oxide layer which passivates the piezoresistive sensing network. The chip is then attached to a glass pedestal, which is larger in size than the sensor chip. The glass pedestal has a through hole or aperture at each corner. The entire composite structure is then mounted onto a high temperature header with the metallized regions of the header being exposed to the holes in the glass pedestal; a high temperature lead is then bonded directly to the metallized contact area of the sensor chip at one end. The leads are of sufficient length to extend into the through holes in the glass pedestal.

Abstract: An improved pressure transducer is disclosed. The transducer includes a connector, an enclosure, a sensor portion, and an external heater disposed to heat the sensor portion. In some aspects, the sensor portion includes a sensor constructed from a brittle material and does not employ any fill fluid within the sensor. In another aspect, the invention includes a kit that adapts non-heated high purity vacuum transducers for heated use. The kit includes a connector portion and a heater portion that is coupled to the connector portion. The connector portion may also include one or more indicators.

Abstract: A pressure sensor includes a casing formed with a first case and a second case that has a pressure introduction hole for introducing a measurement object, a pressure sensing portion in the casing and a metal diaphragm disposed between an end face of the first case and a reception face of the second case. The measurement object is introduced into a subspace that is formed as an expanded end of the pressure introduction hole in the second case for measurement of pressure by transmitting the pressure through the diaphragm to the pressure sensing portion, and the pressure sensing hole has an orifice that reduces a cross-sectional area of the pressure sensing hole.

Abstract: A method for measuring average velocity pressure of a stack comprises the following steps. First, a total pressure measuring device is provided. The total pressure measuring device then measures the total pressure at a first location in the stack. Next, physical parameters comprising a distance between the first location and an outlet of the stack, a diameter and shape thereof are obtained. A formula of a static pressure and the average velocity pressure between the outlet and the first location is obtained by comparing the physical parameters to known fluid mechanics data. Finally, the average velocity pressure is obtained from the formula and the total pressure.

Abstract: A low cost sensor assembly for measuring oxygen pressures contains a transistor header. The transistor header has terminal pins extending therefrom. The transistor header co-acts with a first circuit insulator board. The first circuit board has deposited thereon four hand mirror shaped contact areas each one associated with one of the terminal pins of the transistor header. The top portion of each contact areas has an aperture with the extending arm of the area directed towards the center of the board. The board is epoxied to the transistor header with the terminal pins of the header extending into the apertures of the contact board. A second contact board is then epoxied to the first contact board. The second contact board has a series of four apertures located at the center. Each of the apertures of the second board contacts the handle portion of the mirror patterns of the first board.

Abstract: A sensor and sensor module with small power consumption and high reliability are disclosed. The sensor includes a capacitor having a capacitance varying with a physical quantity, a capacitance-voltage conversion circuit for converting the capacitance of the capacitor into a voltage, and a control signal generation circuit for generating a plurality of control signals. The capacitor has a frequency-capacitance characteristic with a resonant frequency. In a measurement of the physical quantity, the capacitance of the capacitor is measured with one of the control signals having a first frequency which is much higher or much lower than the resonant frequency. In a self-diagnosis of the sensor, the capacitance of the capacitor is measured with another one of the control signals having a second frequency which is equal or close to the resonant frequency.

Abstract: A pressure sensor includes a sensor chip in which a diaphragm is provided, and a case to which the sensor chip is directly mounted by an adhesive. A groove that surrounds the diaphragm is provided on the rear surface of the sensor chip between the bonded part and the diaphragm. The groove prevents thermal stress, which occurs at the bonded part, from reaching the diaphragm through the sensor chip, and thereby the accuracy of the sensor output is highly accurate. Further, the groove may store any excessive adhesive that may be applied when the sensor chip is bonded to the case to prevent the adhesive from flowing and adhering to the diaphragm.

Abstract: Described herein is an assembly of an integrated device and of a cap coupled to the integrated device; the integrated device is provided with at least a first and a second region to be fluidically accessed from outside, and the cap has an outer portion provided with at least a first and a second inlet port in fluid communication with the first and second regions. In particular, the first and second regions are arranged on a first outer face, or on respective adjacent outer faces, of the integrated device, and an interface structure is set between the integrated device and the outer portion of the cap, and is provided with a channel arrangement for routing the first and second regions towards the first and second inlets.

Abstract: A high-temperature pressure sensor that includes a dielectric layer. The pressure sensor also includes a substrate capable of withstanding temperatures greater than 450° C. without entering a phase change, at least one semiconducting material deposited on the sapphire substrate, and a silicon dioxide layer deposited over the semiconducting material. One aspect of the pressure sensor includes a second semiconducting material.

Abstract: A semiconductor-based pressure sensor adapted for enhanced operation with controls electronics includes a pressure transducer having an output formed on a silicon die and an amplifier having an input and an output and fabricated on the silicon die next to the pressure transducer. The pressure transducer's output is provided to the amplifier's input via electrical connection. Output from the amplifier is connectable to a controller such as an ASIC.

Abstract: A novel displacement instrument that can be used to measure the density or modulus of an aggregate pier upon which a multistory building or parking garage can be built. The aggregate piers are often 35 feet or deeper. These aggravate piers are constructed by adding lifts of approximately 12 to 18 inches of aggregate at a time and tamping it into the pier forming hole. Each lift of aggregate is being tamped or struck by a force of approximately 15,000 psi or greater. The displacement instrument allows aggregate piers to be constructed having a density or modulus that is consistent from the bottom of the hole to the top of the hole. The displacement instrument would be mounted on the side plate of a hydraulic breaker that is mounted on the end of a boom of a crane. The displacement instrument need not be permanently installed on the side of the hydraulic breaker and it is freely removed and installed on another crane.

Abstract: An insulated IC pressure sensor comprises a main body, enclosing a chamber, having a hole for letting in fluid pressure of which is to be sensed, a pressure-sensing integrated circuit (IC), placed inside the chamber, and a membrane, placed inside the chamber between the hole and the pressure-sensing IC, tightly sealing the pressure-sensing IC from a remainder of the chamber, creating a sealed space between the pressure-sensing IC and the membrane filled with electrically insulating fluid, so that sensing pressure of electrically conducting fluid will not directly contact and hence not adversely affect the pressure-sensing IC by short-circuits.

Abstract: A pressure sensor assembly comprised of a single and dual layer diaphragm with integrated force sensing flexure, such as a cantilever beam. Strain gages are positioned on the force sensing beam. The pressure forces the diaphragm to deflect. The deflection is constrained by the beam, which is compelled to bend. The bending induces strains in strain gages located on the beam. The strain gages are connected in a Wheatstone bridge configuration. When a voltage is applied to the bridge, the strain gages provide an electrical output signal proportional to the pressure. Composite diaphragm—beam pressure sensors convert pressure more efficiently and improve sensor performance.

Abstract: A pressure sensor for detecting a pressure and for outputting a signal based on the piezoresistance effect includes a substrate having a sensor chip on one side in a thin portion and a concave portion on another side, a piezo-resistor in the sensor chip, a pedestal being attached to the substrate and having a through hole for introducing the pressure to the sensor chip and a gel material filled in the concave portion and the through hole for protecting the sensor chip. A ratio of a diameter of the through hole to a thickness of the pedestal is substantially within a range between 1 and 3.

Abstract: A hermetically sealed displacement sensor has strain gauges placed on thin flexible triangular shaped beams of a load beam cell. The strain gauges are enclosed in a hermetically sealed cavity which cavity is sealed by means of a cover plate placed over the load beam cell. The thin beams are connected together by a center hub and basically form two constant moment beams. There is a top isolation diaphragm member which is convoluted and to which a force is applied which applied force is transmitted to the thin flexible beams. The beams deflect and the sensors produce an output proportional to strain. The sensors on each beam are two in number wherein one sensor is placed in a longitudinal direction with respect to the beam while the other sensor is in a transverse position. The sensors may be wired to form a full Wheatstone bridge or half bridges may be employed. The electrical output from the strain gauge bridge is proportional to the deflection of the center of the sensor.

Abstract: This invention aims to realize reduction in size without impairing measurement accuracy or connection reliability in a semiconductor pressure sensor in which a glass substrate is adhered to a rear-surface side of a pressure-sensitive chip in which piezoresistive pressure-sensitive gauges have been formed on a front surface of a diaphragm formed of a silicon single crystal to form a space between a rear surface of the diaphragm and the glass substrate, for measuring a pressure applied to the front surface of the diaphragm with reference to a pressure of the first space as a standard pressure. In order to achieve this object, the semiconductor pressure sensor includes resinous projections formed on pressure-sensitive gauge electrodes disposed on a front surface of the pressure-sensitive chip or on wiring from the pressure-sensitive gauge electrodes and bumps formed so as to partially or entirely cover the resinous projections.

Abstract: A pressure sensor comprising a plurality of sensor parts arranged in matrix. A first electrode being connected with first wiring and a second electrode being connected with second wiring are disposed oppositely through a cavity part in the sensor part. The second electrode bends to the first electrode side in response to a pressure from a specimen and touches the first electrode upon application of a pressure of a specified level or above. When the specimen is pressed against a pressure detecting region, both electrodes touch each other at a sensor part corresponding to a protrusions of the specimen and are separated at a sensor part corresponding to a recess. When a scanning signal is fed from a scanning circuit to one wiring and presence of a signal flowing through the second wiring is detected by a sensing circuit, a pressure being applied to each sensor part can be detected.

Abstract: The present invention provides a pressure sensor. The pressure sensor comprises a substrate with several support structures attached to the substrate. The pressure sensor further includes a strut structure integrated with a heating element. The strut structure is engaged with the support structures so as to create an air gap between the heating element and the substrate. The heating element has an electrical resistance proportional to changes in air pressure in the air gap.

Abstract: The method for promoting the size reduction, the performance improvement and the reliability improvement of a semiconductor device embedded with pressure sensor is provided. In a semiconductor device embedded with pressure sensor, a part of an uppermost wiring is used as a lower electrode of a pressure detecting unit. A part of a silicon oxide film formed on the lower electrode is a cavity. On a tungsten silicide film formed on the silicon oxide film, a silicon nitride film is formed. The silicon nitride film has a function to fill a hole or holes and suppress immersion of moisture from outside to the semiconductor device embedded with pressure sensor. A laminated film of the silicon nitride film and the tungsten silicide film forms a diaphragm of the pressure sensor.

Abstract: A micromechanical sensor for measuring at least a first pressure of a first medium, as well as a method for manufacturing such a micromechanical sensor. The micromechanical sensor has at least one substrate having at least two sensor elements, which are preferably made of a semiconductive material. The substrate has at least a first sensor element for measuring an absolute-pressure variable of the first medium and a second sensor element for measuring a relative-pressure variable of the first medium.

Abstract: The present invention relates to a pressure measuring apparatus, characterized in that: the pressure measuring apparatus comprises a pressure sensor having a first resistor for sensing an external stress and a second resistor acting as a reference, wherein the second resistor is acting as a reference while the first resistor is used for measuring an external stress in that a first oscillating signal received by an end of the first resistor is affected by the external stress, and consequently an affected first oscillating signal varied with respect to the external stress is outputted from the other end of the first resistor, and a second oscillating signal received by an end of the first resistor is outputted from another end of the second resistor without being affected by the external stress.

Abstract: An outer case connector portion, a gauge housing case, and the like for use with a pressure sensor, for example, are generally made of a thermoplastic or thermosetting resin. However, the resin physically causes curing shrinkage. Especially when a metal is insert molded with a resin, curing shrinkage of the resin generates a gap at the interface between the resin and the metal. By filling an anaerobic, high-permeability adhesive in the gap, hermetic sealing can be ensured and reliability can be enhanced. Inexpensive hermetic sealing and enhanced reliability are realized.

Abstract: A semiconductor pressure sensor is provided with a semiconductor pressure sensor part that converts a pressure to an electrical signal, a sensor module in which said semiconductor pressure sensor part and a terminal of which part is extended to the outside are insert-molded with a first resin, and an outer case in which said sensor module is contained, and said sensor module is further insert-molded with a second resin to form a connector portion, and the semiconductor pressure sensor is characterized in that the exposed portion of the sensor module from the second resin, and the boundary between the exposed portion of the sensor module and the second resin are covered with an adhesive.

Abstract: A semiconductor chip for use in fabricating pressure transducers, including: a semiconductor wafer having a top and a bottom surface, a layer of an insulating material formed on the top surface, the bottom surface having at least two recesses of substantially equal dimensions and spaced apart, the recesses providing first and second substantially equal thin active areas, which areas deflect upon application to a force applied to the top surface, a first plurality of piezoresistive devices arranged in a given pattern and positioned on the insulating material and located within the first area, a second equal plurality of piezoresistive devices arranged in the identical pattern and located on the insulating material within the second active area, first connecting means for connecting the first plurality of piezoresistive devices in a first array, second connecting means for connecting the second plurality of piezoresistive devices in a second array corresponding to the first array.

Abstract: In order to realize a compact wireless pressure sensor system which transmits an accurate pressure value, the present invention provides a pressure sensor system constructed at least by a silicon chip on which a circuit operated by electromagnetic wave energy is mounted, and a film which supports an antenna, in which film a through-hole is provided in the vicinity of a diaphragm part.

Abstract: A retrofittable pressure gauge for a spray gun includes a pressure sensor, located in a pressure chamber, a power source and a display unit, all enclosed within a case, a passageway providing fluid communication between the pressure chamber and a pressurised interior space of the spray gun when the gauge is mounted on the spray gun and a mounting fixture configured for mounting the pressure gauge at a spreader valve or a trigger operated fluid valve of the spray gun.

Abstract: A pressure sensor having a digital output includes a substrate formed with plural channels, and a gating part formed in such a way that an area confronting with the plural channels is spaced from the substrate and moved in response to an external pressure, thereby making the plural channels selectively conductive. Such a pressure sensor can obtain binary information of each channel from the fact that which is made to be conductive among the plural channels is determined by the movement of the area formed in the gating part to confront with the plural channels, and it is possible to measure a pressure within a set range from binary information of each of the plural channels. As a result, because a peripheral circuit of the pressure sensor can be simplified, the manufacturing costs and power consumption can be greatly reduced.

Abstract: A micromechanical component having a substrate, a cavity formed in the substrate, a membrane provided on the surface of the substrate, which seals the cavity, the membrane having at least two layers between which one or several piezoelectric or piezoresistive circuit trace strip(s) is/are embedded, and a corresponding manufacturing method therefor.

Abstract: A silicon-based high pressure sensor module incorporates a low temperature cofired ceramic (LTCC) substrate. The LTCC substrate can withstand high pressures. A bossed container filled with oil is mounted on the substrate and houses a sensor cell. The top surface of the bossed container is flexible and deflects under pressure. By controlling the surface area and the thickness of the top surface, the pressure sensor can be configured to measure a wide range of pressures. The oil transfers pressure from the bossed container to the diaphragm of the sensor cell while protecting the sensor cell from high pressures and harsh media.

Abstract: A pressure sensor (30) for harsh environments such as vehicle tires, formed from a chamber (58) partially defined by a flexible membrane (50), the chamber (58) containing a fluid at a reference pressure. In use, the flexible membrane (50) deflects from any pressure difference between the reference pressure and the fluid pressure. The membrane (50) being at least partially formed from conductive material so that associated circuitry (34) converts the deflection of the flexible membrane (50) into an output signal indicative of the fluid pressure. The associated circuitry is adapted to be powered by electro-magnetic radiation transmitted from a point remote from the sensor. Beaming energy to the sensor removes the need for long-life batteries, or can be used to supplement or charge the batteries. In either case, the sensor avoids the need for large batteries and is therefore small enough for installation in the valve stem or valve itself.

Abstract: A pressure sensor includes a sensor chip and a circuit chip. The sensor chip, which is configured to generate an electrical signal representative of a pressure being sensed, has a surface including a sensing area and a plurality of electrical contact pads disposed on the surface. The circuit chip includes a circuit configured to process the electrical signal and has a surface on which a plurality of electrical contact pads of the circuit chip are disposed. The circuit chip is joined to the sensor chip so that the electrical contact pads of the circuit chip are respectively electrically connected to those of the sensor chip, all the electrical contact pads of the circuit chip and the sensor chip are hermetically sealed and isolated from the fluid, and the surfaces of the circuit chip and the sensor chip face each other with the electrical contact pads of the same interposed therebetween.