Abstract: The method for making patterned resist masks having minimum opening dimensions. The mask is prepared initially using standard photo or electron beam lithography techniques to yield the smallest aperture dimensions consistent with the state-of-the-art. Then, the resulting mask is placed within a chamber containing an atmosphere of resist solvent vapor. The vapor is absorbed by the patterned resist mask causing controlled resist reflow which uniformly reduces the dimensions of the resist openings by an amount determined by time, temperature, resist thickness, resist type and solvent used.

Abstract: A photosensitive color-forming element comprises a support and a photosensitive color-forming layer formed on said support and containing therein at least one photosensitive color-forming azido compound of the formula ##STR1## wherein [A] is a benzene ring or naphthalene ring, R.sub.1 and R.sub.2 each is a hydrogen or halogen atom or alkyl, alkoxyl, dialkylamino, acyl, acylamino, nitro or hydroxyl radical, and R.sub.3 is a hydrogen or halogen atom, or alkyl, alkoxyl, nitro, carboxyl, alkylcarboxyl, dialkylcarbamoyl, sulfonic acid, dialkylaminosulfonyl, alkylsulfonyl or acyl radical or a group of the formula (II), (III), (IV) or (V): ##STR2## in which formula X is an --O-- bonding or --NH-- bonding.[B] is a benzene ring or naphthalene ring, and R.sub.4 and R.sub.

Abstract: This invention relates to a photopolymerizable copying composition comprising at least one binder, at least one photoinitiator, and at least one polymerizable, acid amide group-containing acrylic acid derivative or alkyl acrylic acid derivative which is not volatile at 100.degree. C and contains at least two polymerizable groups in the molecule, the polymerizable compound containing at least one compound of the following general formulaA(--X--NH--CO--G).sub.pwherein:A stands for Z(--CO--NH--).sub.2 wherein Z is ##STR1## --O--CH.sub.2 --C.sub.q H.sub.2q --O--, or --O--(CH.sub.2 CH.sub.2 --O--).sub.rWhereinq is a whole number from 1 to 11, andr is a whole number from 1 to 5, or forE--C(--CH.sub.2 --O--CO--NH--).sub.3whereinE is CH.sub.3 --, C.sub.2 H.sub.5 -- or --NH--CO--O--CH.sub.2 --,G stands for ##STR2## or ##STR3## whereinn is 0, 1, or 2,m is a whole number from 1 to 11,k is 0 or a whole number from 1 to 4,R.sub.1 is alkyl with 1 to 3 carbon atoms, or --R.sub.4 or --CH.sub.2 --R.sub.4,R.sub.2 and R.sub.

Abstract: A thin film circuit consisting of a planar substrate of insulating material and a thin metal film formed from an alloy of aluminum with between 2 to 20 atom percent tantalum from which resistors and capacitors are developed. The metal film has an equivalent composition to a film which is formed by means of reactive cathode sputtering. In particular, the film is equivalent to a film formed using a cathode of aluminum and tantalum which is reactively sputtered in a sputtering atmosphere containing oxygten with a low partial pressure.In such an arrangement, the temperature coefficient of resistance and the capacity temperature coefficient compensate one another. The alloy films have a high oxidation stability and the resistors and capacitors therefrom have a high resistance to aging.

Abstract: Novel styrene-allyl alcohol copolymer based solid polyene compositions which when mixed with liquid polythiols can form solid curable polyene-polythiol systems. These solid polyenes, containing at least two reactive carbon-to-carbon unsaturated bonds, are urethane or ester derivatives of styrene-allyl alcohol copolymers. The solid polyenes are prepared by treating the hydroxyl groups of a styrene-allyl alcohol copolymer with a reactive unsaturated isocyanate, e.g., allyl isocyanate or a reactive unsaturated carboxylic acid, e.g., acrylic acid. Upon exposure to a free radical generator, e.g., actinic radiation, the solid polyene-polythiol compositions cure to solid, insoluble, chemically resistant, cross-linked polythioether products. Since the solid polyene-liquid polythiol composition can be cured in a solid state, such a curable system finds particular use in preparation of coatings, imaged surfaces such as photoresists, particularly solder-resistant photoresists, printing plates, etc.

Abstract: A method of constructing masks characterized by a high aspect ratio. The method includes at least a single exposure of a mask by radiation which is transmitted by the substrate before impinging on the resist. In a specific embodiment the mask is partially completed and the already deposited mask modulates the radiation transmitted by the substrate before it exposes the resist.

Abstract: An integrated array of optical fibers and thin film optical detectors is formed by constructing an array of optical detectors in registration with light-emitting portions of the optical fibers. A cadmium sulfide semiconducting film, grown upon a silicon substrate, is covered with an optically transparent and electrically conductive tin dioxide ground plane film. An array of optical fibers, having light-emitting ends in substantial contact with the conductive file, is mounted to a frame attached to such film. The frame and optical fibers are epoxy encapsulated above the conductive film; the substrate is then removed and photo resist applied over the newly exposed semiconducting film surface. Light transmitted directly through the optical fibers, and through the light-emitting portions thereof in contact with the conductive film, is used to activate, from a rear side, only those portions of the photo resist layer which are in exact registration with the light-emitting ends of the optical fibers.

Abstract: Novel styrene-allyl alcohol copolymer based solid polyene compositions which when mixed with liquid polythiols can form solid curable polyene-polythiol systems. These solid polyenes, containing at least two reactive carbon-to-carbon unsaturated bonds, are urethane or ester derivatives of styrene-allyl alcohol copolymers. The solid polyenes are prepared by treating the hydroxyl groups of a styrene-allyl alcohol copolymer with a reactive unsaturated isocyanate, e.g., allyl isocyanate or a reactive unsaturated carboxylic acid, e.g., acrylic acid. Upon exposure to a free radical generator, e.g., actinic radiation, the solid polyene-polythiol compositions cure to solid, insoluble, chemically resistant, cross-linked polythioether products. Since the solid polyene-liquid polythiol composition can be cured in a solid state, such a curable system finds particular use in preparation of coatings, imaged surfaces such as photoresists, particularly solder-resistant photoresists, printing plates, etc.

Abstract: A process for making chip carriers using an anodized aluminum substrate iudes punching registration holes and center holes in the aluminum substrate, anodizing the aluminum and laminating copper foil to the substrate. Photo resist, etching and plating steps follow.

Abstract: Baked novolak resin based positive photoresists are either developed after exposure or stripped, following the use of the pattern resist layer as an etch mask, in aqueous solutions of a combination of permanganate and phosphoric acid.

Abstract: A method of forming a circuit mask is disclosed. The method comprises selectively heating a portion of a cell comprising a liquid crystal above the transition temperature of the liquid crystal material to render the portion capable of scattering a desired radiant energy. An artwork master is thus formed having a pattern delineated therein capable of transmitting the desired radiant energy therethrough. A member having a surface sensitive to the desired radiant energy is positioned in a desired spatial relationship with the master. The master is exposed to the desired radiant energy whereby the radiant energy is transmitted through the pattern to expose at least a portion of the sensitive surface thereto. The exposed sensitive surface is treated to form the circuit mask having a pattern capable of transmitting light therethrough.

Abstract: A positive photoresist having increased sensitivity to light and formed by the addition of an acidic compound to a 1,2-quinone-diazide sulphonic acid ester sensitizer.

Abstract: The invention comprises a method of forming a pattern of conductive tin oxide anodes on a glass plate by forming a layer of tin oxide on the plate, masking off predetermined patterns with a layer of resist material, and dipping the resist-coated plate in an etchant comprising a mineral acid in which chromium is dissolved and to which some other active metal is added during the dip process as required.

Abstract: Positive photoresist layers including a base soluble resin and a diazo ketone sensitizer are treated with hydrogen ion following initial exposure to achieve changes in the developed resist profile and/or development in a negative mode.

Abstract: Novel styrene-allyl alcohol copolymer based solid polyene compositions which when mixed with liquid polythiols can form solid curable polyene-polythiol systems. These solid polyenes, containing at least two reactive carbon-to-carbon unsaturated bonds, are urethane or ester derivatives of styrene-allyl alcohol copolymers. The solid polyenes are prepared by treating the hydroxyl groups of a styrene-allyl alcohol copolymer with a reactive unsaturated isocyanate, e.g., allyl isocyanate or a reactive unsaturated carboxylic acid, e.g., acrylic acid. Upon exposure to a free radical generator, e.g., actinic radiation, the solid polyene-polythiol compositions cure to solid, insoluble, chemically resistant, cross-linked polythioether products. Since the solid polyene-liquid polythiol composition can be cured in a solid state, such a curable system finds particular use in preparation of coatings, imaged surfaces such as photoresists, particularly solder-resistant photoresists, printing plates, etc.

Abstract: Recording media comprising a mixture of 4,4'-bis(3-diazo-3,4-dihydro-4-oxo-1-naphthalenesulfonyloxy)benzil and an alkali soluble resin are suitable for recording information with electron beams. These recording media have high sensitivity, high resolving power and can be reproducibly formulated.

Abstract: An alignment assembly for masking and a process for depositing a metallic coating on selected areas on the back side of a semiconductor wafer. The assembly and process involves a distinctive alignment chuck having a pattern of grooves therein and a mask aligned with the chuck. In the method, a photomask for the back side of the wafer is aligned with the grooves in the chuck, a wafer nested face down in the chuck, and the mask moved into contact with the back side of the wafer. The front side of the wafer has a pattern of ridges that nest in the chuck grooves to align the wafer in the chuck. A photoresist layer on the back side of the wafer is subjected to an ultraviolet light through the photomask. Unexposed areas of photoresist are removed to expose selected areas on the back side of the wafer on which a metallic coating can be deposited.

Abstract: Positive resists are made using polymers and copolymers of methacrylic acid, methacrylic anhydride, methyl methacrylate, methacrylimide, and N-alkyl-methacrylimides which have been nitrated in up to about 10% of the monomer units on the methyl groups branching off the polymer chain. Inclusion of the nitro groups results in an increase of over an order of magnitude in the speed of development of images when the polymers are used as positive resists.

Abstract: A photosensitive color-forming element comprises a support and a photosensitive color-forming layer carried on the support and containing therein a color-forming coupler, for example, 1-naphthol, 2-naphthol and 2,4-dichloro-1-naphthol, and a photosensitive azido compound of the formula (I) or (II): ##STR1## wherein R.sub.1 represents a hydrogen or halogen atom or an alkyl, alkoxyl, diethylamino or hydroxyl radical R.sub. 2 an alkyl, alkoxyl or hydroxyl radical, and R.sub.3 a hydrogen atom or an alkyl or phenyl radical, and, if necessary, a polymeric material capable of hardening or being insolubilized in solvent when the polymeric material is exposed to radiation rays in the presence of the above azido compound, the above-mentioned azido compound and color-forming coupler being capable of forming a dark color upon exposure to radiation rays, without a color-developing agent.

Abstract: A fabrication process for fabricating multiple layer magnetic bubble domain devices using only a single masking step. As a specific example, a thin conductor film (which could be a magnetic material, such as NiFe) is deposited on a substrate comprising a magnetic bubble domain material. This conductor film is coated with a resist which is exposed with an electron beam or an X-ray beam. The exposure density in a first area of the resist is different than that in a second area of the resist. Subsequent development of the resist will uncover the thin film only in the area which has received the greater exposure density. This area can then be used as a plating base for electro-plating another conductive layer, such as a thick gold film. Further development of the resist is used to uncover the second area (which initially received a lower exposure density).

Abstract: An imaging method involves a substrate having a coating which undergoes a photochemical conversion upon being irradiated to yield only products whose vapor pressure under the operative temperature is higher than that of the coating. In this way as a result of the selective vaporization of the coating the desired image is obtained. The new method has wide applications such as photography, production of microfilms, electrophotographic document duplication, production of master prints for offset printing, etc.

Abstract: In IC fabrication, feature size accuracy is monitored by making a test pattern composed of grating lines in proximity to two reference patterns. With the proper feature size, the test pattern will visually appear to have a shade of grey intermediate that of the two reference patterns. Too small a feature size will make the test pattern lighter, while too large a feature size will make it appear darker.

Abstract: A method for forming an image, which comprises subjecting an image-recording material comprising a metal layer and an inorganic material layer to imagewise exposure by application of electromagnetic radiation, and then heating the exposed material to cause a thermal doping of the unexposed area of the metal layer. This method permits the formation of negative-positive type images. The product finds a wide range of valuable industrial applications, for example, as an ordinary image-recording material, laser recording material, electron beam recording material or microrecording material, and also for producing a print-wiring plate, relief metal plate for relief and lithographic printing, or a master for electrostatic printing.

Abstract: It has been discovered that the sensitivity of positive acting polymeric electron beam resists is increased by well over an order of magnitude by using polymers having a molecular weight of at least one million, thereby making it possible to reduce the required radiation to below 3 .times. 10.sup..sup.-6 coulombs/cm.sup.2.

Abstract: A process or method for producing circuit boards by photo-etching characterized by exposing a first photo-sensitive layer applied to a conductive metal layer on the substrate, removing the unexposed portion of the photo-sensitive layer to expose portions of the metal conductive layer, applying a second metal layer of corrosion-resistant material on the exposed portions of the first metal layer, applying a second photo-sensitive layer, exposing the second photo-sensitive layer using the same mask with the width of the second unexposed pattern, which is an etch-resistant material, being greater than the width of the second metal layer, removing the exposed portions of the second photo-sensitive layer, and etching the first metal layer with a controlled under-etching of the second photo-sensitive layer up to the edges of the second metal layer and then removing the unexposed pattern of photo-sensitive material.

Abstract: The invention provides a method for making a relief mask used for pattern neration in planar thin film overlays, which relief mask is structurally formed to produce intimate contact between a photoresist surface and a masking pattern during exposure of the photoresist surface. The present method comprises the steps of:1. depositing gold on a blank mask substrate;2. coating the gold-covered substrate with a photosensitive material;3. forming a relief pedestal on the blank mask substrate by exposure of the photoresist and etching of the gold; and,4. forming a masking pattern on the relief pedestal.

Abstract: A resist mask is formed by coating on a substrate a layer of a polymer, such as polymethyl methacrylate, which is degradable by high energy radiation, such as a scanning electron beam. The layer is exposed to high energy radiation in a patternwise manner so as to lower the molecular weight of the polymer in the exposed portions. The layer is developed to remove the exposed portions by immersing the layer in a developer which consists of alkyl acetates and ketones having between 7 and 9 carbon atoms and mixtures thereof at a temperature of at least about 40.degree. C.

Abstract: Very sensitive electron beam positive resists have been obtained using films of nitrocellulose containing 10.5 to 12% nitrogen.

Abstract: A process for forming an embedded interconnection metallurgy system on a substrate by (1) forming a first layer of an organic thermosetting polymerized resin material on the substrate, (2) forming a second overlying layer of a material that is soluble in a solvent that does not appreciably affect the material of the first layer, (3) forming a third layer resistant to reactive ion etching in O.sub.2 on the second layer, (4) masking the third layer to define the pattern of the desired metallurgy, (5) removing the exposed areas of the third layer, (6) reactive ion etching the resultant exposed areas of the first and second layers, (7) depositing a conductive metal with a thickness approximately matching the thickness of the first layer, and (8) exposing the substrate to a solvent selective to the material of the second layer thereby removing it and the overlying portions of the conductive metal layer.

Abstract: A channeled photosensitive element and a process and apparatus for laminating the same are described. In particular, a substantially solid, photoresist-forming layer having grooves or channels therein is applied with pressure to a surface having raised areas, such as a printed circuit board without entrapping air bubbles.

Abstract: Semiconductor structures and a method of producing the same comprising coating the surface of a semiconductor body with a first inorganic insulating layer; coating an electrical conductor path on the first insulating layer; coating an organic layer which includes a compatible compound therein which vaporizes at a relatively low temperature onto select points or portions of the conductor path; coating a second inorganic insulating layer on all exposed surfaces of the conductor path, the organic layer and the first insulating layer; and heating the resulting structure to a temperature sufficient to vaporize the compatible compound within the organic layer and remove areas of the second insulating layer which superimposed the organic layer so as to unmask the select portions of the conductor path for access to external electrical connection means.

Abstract: A photopolymerizable paste composition comprising film-forming solid inorganic particulate material, a polymer binder, unsaturated monomers, and an organic initiator dispersed in a hydrogenated terpene solvent provides a screen printable paste composition compatible with thick-film techniques used for fabricating electrically conductive and dielectric patterns and layers on substrates for electronic circuits.

Abstract: This invention relates to photopolymerizable compositions comprising an ethylenically unsaturated organic compound and a visible light photosensitizing composition comprising a combination of Mn.sub.2 (C0).sub.10 and a co-catalyst selected from the group consisting of a compound characterized by the formula ##SPC1##Wherein R.sub.1 is --H, --Br, or --CH.sub.3, R.sub.2 is --H or --CH.sub.3, and R.sub.3 is --H or --CH.sub.3 ; cumene; diisopropyl benzene; alkyl mercaptans containing from 10 to 16 carbon atoms; thiourea; and mixtures thereof and to polymerized products thereof. The invention also provides a process for photopolymerizing ethylenically unsaturated organic compounds with visible light in the range of 4,000 to 7,000 angstroms.

Abstract: A cross-linkable positive resist formed from mixtures of a copolymer of an olefinically unsaturated carboxylic acid and an olefinically unsaturated compound having no free acid group and a copolymer of olefinically unsaturated acid chloride and an olefinically unsaturated compound having no acid chloride group.

Abstract: A method of etching a desired pattern in a layer of indium tin oxide formed on a substrate of a semiconductor or an insulating material in which the desired pattern is formed of a hardened photoresist on the layer of indium tin oxide and thereafter the substrate and the indium tin oxide layer with the hardened resist thereon is immersed in a solution of concentrated hydrobromic acid for a time sufficient to etch away the indium tin oxide unmasked by the hardened photoresist.

Abstract: A method for treating a surface of copper or copper alloy upon which a photo-etched pattern is to be provided comprising applying a relatively thin coating of cupric chloride formed from a relatively weak solution, drying said coating for moisture removal and then applying a photographic emulsion thereover. The thickness of the cupric chloride coating is approximately 1/10th or less that of the photographic emulsion and upon reaction to light emission effects a color change which is visible through the photographic emulsion thereby permitting rapid inspection of the ultimate pattern to be formed prior to performance of the customary developing, etching, and finishing techniques.

Abstract: A method for modifying vesicular images into non-scattering images is provided, which comprises opening the closed bubbles of the vesicular image to form an open-bore image by allowing at least one organic solvent which attacks the thermoplastic bubble walls of the vesicular image to act on the latter, optionally making the image wettable with a surfactant introducing the image substance into the open pores by treatment with a solution or dispersion of the image substance and, optionally removing any remaining gas bubbles or pores by heat or solvent treatment.

Abstract: An integrated circuit substrate surface, particularly a surface of electrically insulative material, having a pattern of elevated areas and a complementary pattern of unelevated areas is planarized by forming the photoresist pattern in registration with the pattern of unelevated areas, the photoresist pattern having narrower lateral dimensions than said elevated pattern whereby registration is facilitated, flowing the photoresist pattern to laterally expand the photoresist to cover and thereby mask the unelevated areas, and etching to lower the elevated areas which remain uncovered by the photoresist.

Abstract: There is disclosed a method for producing in thick (0.005 inches) polyimide films or sheets, openings, or windows across each of which an electrical conductor, such as copper or aluminum extends. The windows may be of substantial dimensions typically 0.05 inches by 0.1 inches. The conductor is of substantial thickness of about 0.0008 to 0.001 inches. The sheet is coated with the conductor on both surfaces by being rotated in a stream of vapor of the conductor produced by impinging an electron beam (typically at 10 KV and 300 milliamperes) on a block of the conducting material. Photoresist is then deposited on both coated surfaces of the sheet and exposed under masks and developed so as to expose the conducting coating on each surface in the areas of the windows. The exposed coating is then removed with an acid etchant while the remainder of the surfaces remain protected by the developed photoresist. The polyimide in the areas of the windows is thus exposed.

Abstract: The disclosed method is one which provides an extremely thin substrate upon which there can be laid down a high resolution pattern of material such as metal by an electron beam fabrication technique. The latter technique is one wherein a resist is placed on the surface of the substrate. Thereafter, an electron beam is utilized to expose the resist in the desired pattern. The exposed resist is then removed and the metal or other material is laid down on the locations where the resist has been removed. With the use of the very thin substrate, the amount and effect of electron backscattering is substantially minimized whereby the consequent decrease of resolution due to exposure of the resist with the backscattered electrons is effectively eliminated. Accordingly, the resist exposure can be confined to much narrower widths than heretofore possible with known electron beam fabrication techniques.

Abstract: The invention relates to a method of providing a patterned silicon-containing oxide layer on a substrate, by providing a coating comprising a polymerizable siloxane material on the substrate, locally exposing the coating to radiation in accordance with the desired pattern, then developing the exposed coating and converting the siloxane material pattern into the patterned silicon-containing oxide layer.

Abstract: Copolymers of certain keto-olefins and SO.sub.2 are sensitive to light and form films useful as photoresists in the manufacture of printed circuits, integrated circuits, printing plates and the like.

Abstract: A method of forming a hydrophobic surface is disclosed. The method comprises coating a substrate surface with a stable aqueous colloidal solution, formed by a controlled hydrolysis and nucleation reaction, comprising insoluble hydrous oxide particles of an element selected from Be, In, Cr, Fe, Co, Ni, Tl, Cu, Zn, Sn and mixtures thereof. The coated surface is then exposed to a source of ultraviolet radiation having a wavelength ranging from 1800A to 3300A to render exposed surface regions hydrophobic.

Abstract: A process for electrically interconnecting a group of integrated-circuit chips embedded in plastic is described. Multilayer conductors are plated in grooves photoformed in successively applied plastic layers and connected to the chip pads and to conductors on other layers through vias also photoformed in the plastic. Photoformation of wiring grooves and layer-interconnecting vias is accomplished by ultraviolet irradiation of photosensitized liquid polyester resin.

Abstract: An improved method of defining a pattern in a layer of organic material includes depositing a relatively thin layer of silicon dioxide on the layer of organic material, applying to the silicon dioxide layer a film of primer solution comprising a silane derivative, and then forming a photoresist etch mask on the film. By utilizing an ultrasonic etch bath, a uniform and well-defined pattern is etched in the layer of organic material.

Abstract: A positive and negative developable photosensitive composition including a photopolymerizable monomer, photoinitiator, and a blend of polymers, one an acid soluble amino containing polymer, the other a compatible, acid insoluble, film-forming, polymer. The composition, which can be developed positively with dilute aqueous acid or negatively with dilute base, is useful in silk screen printing and as a photoresist composition in general.

Abstract: A thin sheet of metal is first etched in accordance with similar patterns after exposure through masks, from both sides, to form parallel strips which, preferably, extend to integral connecting elements and may, also, include printed circuit connections or components; one of the sides of the strips, additionally, includes transverse cross connections to provide for mechanical attachment of the parallel strips, permitting application of the parallel strips to a substrate, for subsequent removal, so that the resulting electrode will be a plurality of closely spaced parallel strips applied, for example by an adhesive, on a substrate, integral with connecting portions for a printed circuit.

Abstract: A method for producing a photomask, by exposing and development-processing a photographic material including a transparent support having thereon a masking layer and a silver halide emulsion layer to thereby form a silver image, etch-bleaching the silver halide emulsion layer to thereby remove the silver image areas, baking the remaining non-silver image areas to thereby decompose the binder contained therein, subjecting the coated support to etching to thereby remove the masking layer located at the areas corresponding to the silver image, and removing the decomposed binder to thereby uncover the masking layer at the areas corresponding to the non-silver image areas.

Abstract: A method for making lead frame devices wherein a thin metal foil is adhered to a stiffener panel by means of a photoresist layer to enable all processing steps by which the metal foil is transformed into an appropriate and predetermined lead frame configuration. After the lead frame fabrication is completed, the photoresist is removed by suitable means and ready for application and functional use as an electronic component electrical connecting device.

Abstract: a method for semiconductor device manufacture comprising the steps of, (a) repetitively aligning photomasks over a surface of a semiconductor substrate, said substrate having a layer of opaque material on said surface, said opaque material being adapted to receive and retain a photographic pattern; and (b) at least one of said steps employing a photomask of a particular construction, said particularly constructed photomask being placed in physical contact with said opaque material, said particularly constructed photomask essentially consisting of a planar glass substrate having a thickness of approximately 0.25 inches, one surface of said glass substrate having a thin film of chrome thereon, said thin film of chrome having a thickness of approximately 0.1 microns, said thin film of chrome having a photographic pattern formed therein, a layer of SiO.sub.2 fully covering said thin film of chrome and said surface of said glass substrate, said SiO.sub.