Abstract: Grafting M13 bacteriophage into an array of poly(3,4-ethylenedioxythiophene) (PEDOT) nanowires generated hybrids of conducting polymers and replicable genetic packages (rgps) such as viruses. The incorporation of rgps into the polymeric backbone of PEDOT occurs during electropolymerization via lithographically patterned nanowire electrodeposition (LPNE). The resultant arrays of rgps-PEDOT nanowires enable real-time, reagent-free electrochemical biosensing of analytes in physiologically relevant buffers.

Abstract: There are disclosed herein various implementations of a system-in-package with integrated socket. In one such implementation, the system-in-package includes a first active die having a first plurality of electrical connectors on a top surface of the first active die, an interposer situated over the first active die, and a second active die having a second plurality of electrical connectors on a bottom surface of the second active die. The interposer is configured to selectively couple at least one of the first plurality of electrical connectors to at least one of the second plurality of electrical connectors. In addition, a socket encloses the first and second active dies and the interposer, the socket being electrically coupled to at least one of the first active die, the second active die, and the interposer.

Abstract: Articles of silicon nanowires were synthesized on metal substrates. The preparation minimized the formation of metal silicides and avoided the formation of islands of silicon on the metal substrates. These articles may be used as electrodes of silicon nanowires on current collectors.

Abstract: An optoelectronic semiconductor chip includes a semiconductor layer stack consisting of a nitride compound semiconductor material on a carrier substrate, wherein the carrier substrate includes a surface containing silicon. The semiconductor layer stack includes a recess extending from a back of the semiconductor layer stack through an active layer to a layer of a first conductivity type. The layer of the first conductivity type connects electrically to a first electrical connection layer which covers at least a portion of the back through the recess. The layer of a second conductivity type connects electrically to a second electrical connection layer arranged at the back.

Abstract: A lithium-ion cell comprising: (A) a cathode comprising graphene as the cathode active material having a surface area to capture and store lithium thereon and wherein said graphene cathode is meso-porous having a specific surface area greater than 100 m2/g; (B) an anode comprising an anode active material for inserting and extracting lithium, wherein the anode active material is mixed with a conductive additive and/or a resin binder to form a porous electrode structure, or coated onto a current collector in a coating or thin film form; (C) a porous separator disposed between the anode and the cathode; (D) a lithium-containing electrolyte in physical contact with the two electrodes; and (E) a lithium source disposed in at least one of the two electrodes when the cell is made. This new Li-ion cell exhibits an unprecedentedly high energy density.

Abstract: The present disclosure provides a nanotube solution being treated with a molecular additive, a nanotube film having enhanced adhesion property due to the treatment of the molecular additive, and methods for forming the nanotube solution and the nanotube film. The nanotube solution includes a liquid medium, nanotubes in the liquid medium, and a molecular additive in the liquid medium, wherein the molecular additive includes molecules that provide source elements for forming a group IV oxide within the nanotube solution. The molecular additive can introduce silicon (Si) and/or germanium (Ge) in the liquid medium, such that nominal silicon and/or germanium concentrations of the nanotube solution ranges from about 5 ppm to about 60 ppm.

Abstract: A light emitting diode (LED) package and a method of fabricating an LED package are provided. The LED package can include a transparent substrate and an LED arranged on the transparent substrate. A reflective layer and/or a polarizing layer can also be included. The LED may be disposed on one surface of the transparent substrate with the reflective layer and/or polarizing layer formed on an opposing surface of the transparent substrate. The fabrication method may include forming an LED on one surface of a transparent substrate by mounting a flip-chip on the transparent substrate or vapor-depositing the LED directly on the transparent substrate. A multi-package stacked structure can also be provided wherein a plurality of LED packages are stacked together unidirectionally or bidirectionally, with or without a reflective layer and/or a polarizing layer.

Abstract: There are disclosed herein various implementations of semiconductor packages having a selectively conductive film interposer. In one such implementation, a semiconductor package includes a first active die having a first plurality of electrical connectors on a top surface of the first active die, a selectively conductive film interposer situated over the first active die, and a second active die having a second plurality of electrical connectors on a bottom surface of the second active die. The selectively conductive film interposer may be configured to serve as an interposer and to selectively couple at least one of the first plurality of electrical connectors to at least one of the second plurality of electrical connectors.

Abstract: An embodiment relates to a device comprising a substrate, a nanowire and a doped epitaxial layer surrounding the nanowire, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire. Another embodiment relates to a device comprising a substrate, a nanowire and one or more photogates surrounding the nanowire, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire, and wherein the one or more photogates comprise an epitaxial layer.

Abstract: An article includes a substrate having a surface and a nanofence supported by the surface. The nanofence includes a multiplicity of primary nanorods and branch nanorods, each of the primary nanorods being attached to said substrate, and each of the branch nanorods being attached to a primary nanorods and/or another branch nanorod. The primary and branch nanorods are arranged in a three-dimensional, interconnected, interpenetrating, grid-like network defining interstices within the nanofence. The article further includes an enveloping layer supported by the nanofence, disposed in the interstices, and forming a coating on the primary and branch nanorods. The enveloping layer has a different composition from that of the nanofence and includes a radial p-n single junction solar cell photovoltaic material and/or a radial p-n multiple junction solar cell photovoltaic material.

Abstract: A thermosetting composition for forming a protective film of a transparent conductive film is described, containing: a polyester amide acid obtained from a reaction of a mixture containing a tetracarboxylic dianhydride, a diamine and a polyhydric hydroxy compound as a first component, an epoxy resin as a second component, an epoxy curing agent as a third component, and a solvent as a fourth component.

Abstract: Grafting M13 bacteriophage into an array of poly(3,4-ethylenedioxythiophene) (PEDOT) nanowires generated hybrids of conducting polymers and replicable genetic packages (rgps) such as viruses. The incorporation of rgps into the polymeric backbone of PEDOT occurs during electropolymerization via lithographically patterned nanowire electrodeposition (LPNE). The resultant arrays of rgps-PEDOT nanowires enable real-time, reagent-free electrochemical biosensing of analytes in physiologically relevant buffers.

Abstract: Nanosilver coated bacterial cellulose nanofiber and a method of producing the nanosilver coated bacterial cellulose nanofiber. The nanosilver coated bacterial cellulose nanofiber is produced by preparing a suspension of bacterial cellulose fibers, oxidizing bacterial cellulose fibers; adding the thio- group to the polymer backbone; reacting the resulting product with silver proteinate and enhancing the nanosilver particle size. The nanosilver coated bacterial cellulose nanofibers exhibit antimicrobial properties.

Abstract: A field effect transistor and method of fabrication are provided. The field effect transistor comprises a plurality of elongated uniaxially-strained SiGe regions disposed on a silicon substrate, oriented such that they are in parallel to the direction of flow of electrical carriers in the channel. The elongated uniaxially-strained SiGe regions are oriented perpendicular to, and traverse through the transistor gate.

Abstract: Non-planar semiconductor devices including at least one semiconductor nanowire having a tapered profile which widens from the source side of the device towards the drain side of the device are provided which have reduced gate to drain coupling and therefore reduced gate induced drain tunneling currents.

Abstract: A downhole composite component is disclosed. The downhole composite component includes a tubular member, the tubular member comprising a fiber reinforced polymer matrix composite. The fiber reinforced polymer matrix composite includes a polymer matrix, the polymer matrix having an unfilled matrix compressive modulus of elasticity. The polymer matrix also includes a nanoparticle filler comprising a plurality of nanoparticles dispersed within the polymer matrix, the polymer matrix and dispersed nanoparticle filler having a filled matrix compressive modulus of elasticity, the filled matrix compressive modulus of elasticity being greater than the unfilled matrix compressive modulus of elasticity.

Abstract: A nanowire comprises a polar semiconductor material that is compositionally graded along the nanowire from a first end to a second end to define a polarization doping profile along the nanowire from the first end to the second end. The polar semiconductor material may comprise a group IH-nitride semiconductor, such as an alloy of GaN and AlN, or an alloy of GaN and InN. Such nanowires may be formed by nucleating the first ends on a substrate, growing the nanowires by depositing polar semiconductor material on the nucleated first ends on a selected growth face, and compositionally grading the nanowires during growth to impart the polarization doping. The direction of the compositional grading may be reversed during the growing of the nanowires to reverse the type of the imparted polarization doping. In some embodiments, the reversing forms n/p or p/n junctions in the nanowires.

Abstract: The invention relates to a method for fabricating silicon and/or germanium nanowires on a substrate, comprising a step of bringing a precursor comprising silicon and/or a precursor comprising germanium into contact with a compound comprising copper oxide present on the said substrate, by means of which growth of nanowires takes place.

Abstract: A method for making one or more nanostructures is disclosed, the method comprising: depositing a conducting layer on an upper surface of a substrate; depositing a patterned layer of catalyst on the conducting layer; growing the one or more nanostructures on the layer of catalyst; and selectively removing the conducting layer between and around the one or more nanostructures. A device is also disclosed, comprising a substrate, wherein the substrate comprises one or more exposed metal islands separated by one or more insulating areas; a conducting helplayer disposed on the substrate covering at least some of the one or more exposed metal islands or insulating areas; a catalyst layer disposed on the conducting helplayer; and one or more nanostructures disposed on the catalyst layer.

Abstract: The invention provides a method for producing silicon nanowire devices, including the following steps: growing SiNW on a substrate; depositing an amorphous carbon layer and dielectric anti-reflectivity coating orderly; removing part of dielectric anti-reflectivity coating and amorphous carbon layer above the SiNW through dry etching to expose the SiNW device area; depositing an oxide film on the surface of the above structure; forming a metal pad connected with the SiNW in the SiNW device area; depositing a passivation layer on the surface of the above structure; applying photolithography and etching technology to form contact holes on the metal pad and to remove the passivation layer, the oxide film and the dielectric anti-reflectivity coating above the SiNW outside the device area, stopping on the amorphous carbon layer; removing the amorphous carbon layer above the SiNW outside the device area through ashing process to expose the SiNW.

Abstract: According to embodiments of the present invention, a resistive memory arrangement is provided. The resistive memory arrangement includes a nanowire, and a resistive memory cell including a resistive layer including a resistive changing material, wherein at least a section of the resistive layer is arranged covering at least a portion of a surface of the nanowire, and a conductive layer arranged on at least a part of the resistive layer. According to further embodiments of the present invention, a method of forming a resistive memory arrangement is also provided.

Abstract: A method for fabricating semiconductor nanowire includes the following steps: providing a metal substrate in a reactor; filling the reactor with an inert gas; heating and maintaining the reactor in a reaction temperature, raising the pressure in the reactor to a first predetermined pressure, and then passing a reacting precursor into the reactor; keeping passing the reacting precursor to raising the pressure of the reactor to a second predetermined pressure; and, maintaining the second predetermined pressure for a predetermined duration, so as to form semiconductor nanowires on the metal bulk. Accordingly, the method of the invention is capable of forming semiconductor nanowires on metal substrate, so that the processes for fabricating semiconductor nanowires can be simplified.

Abstract: A polymer masterbatch in latex form having nanomaterials and a compatibilized silica for incorporation into natural and synthetic polymers in latex form using precipitated or fumed silica with at least two organosilicon coupling compounds attached to the silica in an aqueous suspension.

Abstract: A varifocal lens including a first liquid crystal layer; a first electrode portion disposed below the first liquid crystal layer and having a flat shape; a first non-uniform electric field generator which generates a non-uniform electric field in the first liquid crystal layer together with the first electrode portion, and the first non-uniform electric field generator including a second electrode portion having a flat shape.

Abstract: The present invention is to provide a semiconductor light-emitting element. The element comprises a substrate and a nanostructural layer. The nanostructural layer is formed on the substrate and comprises a plurality of void-embedded cortex-like nanostructures, wherein the volumetric porosity of the nanostructural layer is ranged from 30% to 59%. Compared with the prior art, the present invention can not only improve the crystalline quality of epitaxial layers but also enhance the external quantum efficiency (EQE) of the semiconductor light-emitting element.

Abstract: Illustrative embodiments of hybrid transparent conducting materials and applications thereof are disclosed. In one illustrative embodiment, a hybrid transparent conducting material may include a polycrystalline film and a plurality of conductive nanostructures randomly dispersed in the polycrystalline film. In another illustrative embodiment, a photovoltaic cell may include a transparent electrode comprising polycrystalline graphene that is percolation doped with metallic nanowires, where the metallic nanowires do not form a percolation network for charge carriers across the transparent electrode.

Abstract: A nanocomposite fluid includes a fluid medium; and a nanoparticle composition comprising nanoparticles which are electrically insulating and thermally conductive. A method of making the nanocomposite fluid includes forming boron nitride nanoparticles; dispersing the boron nitride nanoparticles in a solvent; combining the boron nitride nanoparticles and a fluid medium; and removing the solvent.

Abstract: This invention provides compound solutions, emulsions and gels excellent in homogeneous dispersibility and long-term dispersion stability and also excellent in the properties as cosmetics, using disarranged nanofibers not limited in either form or polymer, widely applicable and small in the irregularity of single fiber diameter. This invention also provides a method for producing them. Furthermore, this invention provides synthetic papers composed of fibers, small in pore area and uniform in pore size, using disarranged nanofibers, and also provides a method for producing them. This invention provides compound solutions, emulsions, gels and synthetic papers containing disarranged nanofibers of 1 to 500 nm in number average diameter and 60% or more in the sum Pa of single fiber ratios.

Abstract: A method for synthesizing monocrystalline alumina nanofibers by controlled liquid phase oxidation of a melt including molten aluminum. The method comprises two stages. During the first stage, metallic aluminum is melted and various additives are introduced into the melt. During the second stage, the alumina nanofibers are synthesized from the resulting melt in the presence of oxygen. In one or more embodiments, the inventive method is performed in a reactor. The reactor is designed to provide the heating and to enable melting of metallic aluminum. In addition, the reactor is designed to maintain a sustained temperature of between 660° C. and 1,000° C. When the additives are introduced into the molten aluminum, it is desirable to provide steady and uniform the stirring of the melt. To this end, the reactor may be provided with a stirring mechanism.

Abstract: A structure for use in an energy storage device, the structure comprising a backbone system extending generally perpendicularly from a reference plane, and a population of microstructured anodically active material layers supported by the lateral surfaces of the backbones, each of the microstructured anodically active material layers having a void volume fraction of at least 0.1 and a thickness of at least 1 micrometer.

Abstract: Nanostructures and photovoltaic structures are disclosed. A nanostructure according to one embodiment includes an array of nanocables extending from a substrate, the nanocables in the array being characterized as having a spacing and surface texture defined by inner surfaces of voids of a template; an electrically insulating layer extending along the substrate; and at least one layer overlaying the nanocables. A nanostructure according to another embodiment includes a substrate; a portion of a template extending along the substrate, the template being electrically insulative; an array of nanocables extending from the template, portions of the nanocables protruding from the template being characterized as having a spacing, shape, and surface texture defined by previously-present inner surface of voids of the template; and at least one layer overlaying the nanocables.

Abstract: The gravimetric and volumetric efficiency of lithium ion batteries may be increased if higher capacity materials like tin and silicon are substituted for carbon as the lithium-accepting host in the negative electrode of the battery. But both tin and silicon, when fully charged with lithium, undergo expansions of up to 300% and generate appreciable internal stresses. These internal stresses, which will develop on each discharge-charge cycle, may lead to a progressive reduction in battery capacity, also known as battery fade. The effects of the internal stresses may be significantly reduced by partially embedding tin or silicon nanowires in the current collector. Additional benefit may be obtained if a 5 to 50% portion of the nanowire length at its embedded end are coated or masked with a composition which impedes lithium diffusion. Methods for embedding and masking the nanowires are described.

Abstract: The present invention provides a process for designing and producing a cooling fluid for use in a cooling system. The process uses molecular dynamics to calculate the thermal properties of one or more fluid-nanoparticle solutions, and thereby aids in the study, selection and/or production of desired cooling fluids based on first principle simulations.

Abstract: A memory cell is provided including a tunnel dielectric layer overlying a semiconductor substrate. The memory cell also includes a floating gate having a first portion overlying the tunnel dielectric layer and a second portion in the form of a nanorod extending from the first portion. In addition, a control gate layer is separated from the floating gate by an intergate dielectric layer.

Abstract: A method of fabricating a FET device is provided which includes the following steps. Nanowires/pads are formed in a SOI layer over a BOX layer, wherein the nanowires are suspended over the BOX. A HSQ layer is deposited that surrounds the nanowires. A portion(s) of the HSQ layer that surround the nanowires are cross-linked, wherein the cross-linking causes the portion(s) of the HSQ layer to shrink thereby inducing strain in the nanowires. One or more gates are formed that retain the strain induced in the nanowires. A FET device is also provided wherein each of the nanowires has a first region(s) that is deformed such that a lattice constant in the first region(s) is less than a relaxed lattice constant of the nanowires and a second region(s) that is deformed such that a lattice constant in the second region(s) is greater than the relaxed lattice constant of the nanowires.

Abstract: A nanoscale variable resistor including a metal nanowire as an active element, a dielectric, and a gate. By selective application of a gate voltage, stochastic transitions between different conducting states, and even length, of the nanowire can be induced and with a switching time as fast as picoseconds. With an appropriate choice of dielectric, the transconductance of the device, which may also be considered an “electromechanical transistor,” is shown to significantly exceed the conductance quantum G0=2e2/h.

Abstract: An urchin-like copper oxide material manufacturing method, comprising following steps: providing copper powder of length about 5 to 150 ?m; placing the copper powder on an aluminum oxide plate to be heated up; and heating up the aluminum oxide plate in a reaction temperature of 300° C. to 700° C., to obtain urchin-like copper oxide material on the aluminum oxide plate. By employing the manufacturing method, it only requires a simple thermal oxidation process to synthesize and obtain various types of urchin-like copper oxides having good stability and reproducibility, hereby achieving excellent performance in various opto-electronic applications.

Abstract: Optical conversion layers based on semiconductor nanoparticles for use in lighting devices, and lighting devices including same. In various embodiments, spherical core/shell seeded nanoparticles (SNPs) or nanorod seeded nanoparticles (RSNPs) are used to form conversion layers with superior combinations of high optical density (OD), low re-absorbance and small FRET. In some embodiments, the SNPs or RSNPs form conversion layers without a host matrix. In some embodiments, the SNPs or RSNPs are embedded in a host matrix such as polymers or silicone. The conversion layers can be made extremely thin, while exhibiting the superior combinations of optical properties.

Abstract: Methods, devices, systems and/or articles related to techniques for forming a graphene film on a substrate, and the resulting graphene layers and graphenated substrates are generally disclosed. Some example techniques may be embodied as methods or processes for forming graphene. Some other example techniques may be embodied as devices employed to manipulate, treat, or otherwise process substrates, graphite, graphene and/or graphenated substrates as described herein. Graphene layers and graphenated substrates produced by the various techniques and devices provided herein are also disclosed.

Abstract: A via forming method that includes forming via-holes in a substrate is provided. The method includes putting the substrate, having the via-holes, in a first solution to fill the via-holes with the first solution. Metal particles are sunk into the via-holes by supplying a second solution containing the metal particles to the first solution. A first curing process of heat-treating the substrate is performed so as to form vias in the via-holes. A multi-chip package that includes the substrate having the vias is also provided.

Abstract: Transparent conductive films, articles made from them, and methods of making them are disclosed. Some transparent conductive films include flexible glass substrates and conductive layers containing metal nanoparticles. Others include at least one layer with cell walls that contain metal nanorods or conductive nanowires. Still others include a substrate with a coating disposed on it, with the coating including conductive components and photopolymers. Such films are useful in such articles as electronic displays, touch screens, and the like.

Abstract: A thin-film photovoltaic devices includes transparent conductive oxide which has embedded within it nanowires at less than 2% nominal shadowing area. The nanowires enhance the electrical conductivity of the conductive oxide.

Abstract: A metal nanoantenna for use in a biosensing device is disclosed. The metal nanoantenna is arranged to exhibit at least two particle plasmon resonances or surface plasmon resonances (SPRs). The nanoantenna is for use in a sensor and allows detection at low concentration of biological components. In one aspect, the nanoantenna can have an asymmetric structural configuration and spectrally separated resonances. In one aspect, there is a location in its structure providing local electromagnetic field enhancement at all of the SPRs. The metal nanoantenna can be used for background free measuring of a quantity of a biological component.

Abstract: A composite structure and a method of manufacturing the composite structure. The composite structure includes a graphene sheet; and a nanostructure oriented through the graphene sheet and having a substantially one-dimensional shape.

Abstract: The present invention relates to hierarchical structured nanotubes, to a method for preparing the same and to an application for the same, wherein the nanotubes include a plurality of connecting nanotubes for constituting a three-dimensional multi-dendrite morphology; and the method includes the following steps: (A) providing a polymer template including a plurality of organic nanowires; (B) forming an inorganic layer on the surface of the organic nanowires in the polymer template; and (C) performing a heat treatment on the polymer template having the inorganic layer on the surface so that partial atoms of the organic nanowires enter the inorganic layer.

Abstract: An asymmetric supercapacitor includes a first structure and a second structure spaced apart from said second structure. One of the structures comprises an anode, and the other of the first and second structures comprises a cathode, wherein the first structure comprises an activated carbon electrode, and the second structure comprises a nanocomposite electrode. The nanocomposite electrode comprises a first network of nanowires that are interpenetrating with a second network of carbon nanotubes.

Abstract: An RF inductor such as a Tesla antenna splices nanotube ends together to form a nanostructure in a polymer foam matrix. High Internal Phase Emulsion (HIPE) is gently sheared and stretched in a reactor comprising opposed coaxial counter-rotating impellers, which parallel-align polymer chains and also carbon nanotubes mixed with the oil phase. Stretching and forced convection prevent the auto-acceleration effect. Batch and continuous processes are disclosed. In the batch process, a fractal radial array of coherent vortices in the HIPE is preserved when the HIPE polymerizes, and helical nanostructures around these vortices are spliced by microhammering into longer helices. A disk radial filter produced by the batch process has improved radial flux from edge to center due to its area-preserving radial vascular network. In the continuous process, strips of HIPE are pulled from the periphery of the reactor continuously and post-treated by an RF inductor to produce cured conductive foam.

Abstract: A thin-film transistor comprises a semiconductor panel, a dielectric layer, a semiconductor film layer, a conduct layer, a source and a drain. The semiconductor panel comprises a base, an intra-dielectric layer, at least one metal wire layer and at least one via layer. The dielectric layer is stacked on the semiconductor panel. The semiconductor film layer is stacked on the dielectric layer. The conduct layer is formed on the semiconductor film layer. The source is formed on the via of the vias that is adjacent to and connects to the gate via. The drain is formed on another via of the vias that is adjacent to and connects to the gate via. A fabricating method for a thin-film transistor with metal-gates and nano-wires is also disclosed.

Abstract: A nanocomposite comprises a matrix; and a nanoparticle comprising an ionic polymer disposed on the surface of the nanoparticle, the nanoparticle being dispersed in and/or disposed on the matrix. A method of making a nanocomposite, comprises combining a nanoparticle and an ionic liquid; polymerizing the ionic liquid to form an ionic polymer; disposing the ionic polymer on the nanoparticle; and combining the nanoparticle with the ionic polymer and a matrix to form the nanocomposite.

Abstract: A positive active material for a rechargeable lithium battery including a compound represented by the following Chemical Formula 1: LixMyCozPO4??Chemical Formula 1 wherein 0?x?2, 0.98?y?1, 0<z?0.02, M is selected from the group consisting of V, Mn, Fe, Ni, and combinations thereof, and the compound exhibits a peak at a 2? value in a range of 40.0 degrees to 41.0 degrees in an X-ray diffraction pattern measured using CuK? radiation, is disclosed.