Abstract: In one embodiment, a memory device includes a first electrode layer on a substrate; a data storing layer on the first electrode layer; and a second electrode layer on the data storing layer. At least one of the first and second electrode layers may be formed of a material having a conduction band offset that varies with an applied voltage. One of the first and second electrode layers may be connected to a bit line and the other may be connected to a word line. The first electrode layer may include one of graphene and metastable oxide. The second electrode layer may include one of graphene and metastable oxide.

Abstract: A method of making a mechanically robust, electrically conductive ultralow-density carbon nanotube-based aerogel, including the steps of dispersing nanotubes in an aqueous media or other media to form a suspension, adding reactants and catalyst to the suspension to create a reaction mixture, curing the reaction mixture to form a wet gel, drying the wet gel to produce a dry gel, and pyrolyzing the dry gel to produce the mechanically robust, electrically conductive ultralow-density carbon nanotube-based aerogel. The aerogel is mechanically robust, electrically conductive, and ultralow-density, and is made of a porous carbon material having 5 to 95% by weight carbon nanotubes and 5 to 95% carbon binder.

Abstract: A method for production of various morphologies of solid carbon product by reducing carbon oxides with a reducing agent in the presence of a catalyst. The carbon oxides are typically either carbon monoxide or carbon dioxide. The reducing agent is typically either a hydrocarbon gas or hydrogen. The desired morphology of the solid carbon product may be controlled by the specific catalysts, reaction conditions, and optional additives used in the reduction reaction. The resulting solid carbon products have many commercial applications.

Abstract: In one embodiment, a bulk carbon nanotube and metallic composite is provided. The bulk carbon nanotube and metallic composite includes a bulk carbon nanotube material layer including a plurality of carbon nanotubes, and a metal film applied across the bulk carbon nanotube material layer. The metal film penetrates into the interstices between individual carbon nanotubes to reduce an electrical resistance between the plurality of carbon nanotubes.

Abstract: The present invention relates to nanostructured material capable of storing hydrogen. The nanostructured material may be configured with a selected geometry to provide the capability to influence and increase the limiting or theoretical gravimetric storage level (GSL) of hydrogen for a given chemical composition.

Abstract: Self-aligned carbon nanostructure field effect transistor structures are provided, which are formed using selective dielectric deposition techniques. For example, a transistor device includes an insulating substrate and a gate electrode embedded in the insulating substrate. A dielectric deposition-prohibiting layer is formed on a surface of the insulating substrate surrounding the gate electrode. A gate dielectric is selectively formed on the gate electrode. A channel structure (such as a carbon nanostructure) is disposed on the gate dielectric A passivation layer is selectively formed on the gate dielectric. Source and drain contacts are formed on opposing sides of the passivation layer in contact with the channel structure. The dielectric deposition-prohibiting layer prevents deposition of dielectric material on a surface of the insulating layer surrounding the gate electrode when selectively forming the gate dielectric and passivation layer.

Abstract: A separated carbon nanotube-based active matrix organic light-emitting diode (AMOLED) device including a substrate and transistors. Each transistor includes an individual back gate patterned on the substrate and a gate dielectric layer disposed over the substrate. An active channel including a network of separated semiconducting nanotubes is disposed over a functionalized surface of the gate dielectric layer. A source contact and a drain contact are formed on two ends of the active channel, with the network of separated nanotubes between the source contact and the drain contact. An organic light-emitting diode (OLED) display device is coupled to the drain of one of the transistors. A system includes a display control circuit having a substrate, with scan lines, data lines, and AMOLED devices formed on the substrate, with each AMOLED device coupled to one of the scan lines and one of the data lines.

Abstract: A method for removing a metallic nanotube, which is formed on a substrate in a first direction, includes forming a plurality of conductors in a second direction crossing the first direction, electrically contacting the plurality of conductors with metallic nanotube, respectively, forming at least two voltage-applying electrodes on the conductors, each of which electrically contacting at least one of the conductors, and applying voltages to at least some of the conductors through the voltage-applying electrodes, respectively. Among the conductors to which the voltages are respectively applied, every two adjacent conductors have an electrical potential difference created therebetween, so as to burn out the metallic nanotube.

Abstract: A method for making a thin film transistor, the method comprising: applying a gate electrode on an insulating substrate; covering the gate electrode with an insulating layer; forming a carbon nanotube layer on a growing substrate, wherein the carbon nanotube layer comprises a plurality of carbon nanotubes; transfer printing the carbon nanotube layer from the growing substrate onto the insulating layer, wherein the insulating layer insulates the carbon nanotube layer from the gate electrode; and placing a source electrode and a drain electrode spaced from each other and electrically connected to two opposite ends of at least one of the plurality of carbon nanotubes.

Abstract: A method of making nanostructures using a self-assembled monolayer of organic spheres is disclosed. The nanostructures include bowl-shaped structures and patterned elongated nanostructures. A bowl-shaped nanostructure with a nanorod grown from a conductive substrate through the bowl-shaped nanostructure may be configured as a field emitter or a vertical field effect transistor. A method of separating nanoparticles of a desired size employs an array of bowl-shaped structures.

Abstract: The present invention provides a process for the preparation of graphene or graphene-like fragments of another layered structure, said process comprising the step of mixing and grinding graphite or said other layered structure with at least one ionic liquid. The invention also provides the use of grinding in ionic liquids in such a process and products formed or formable by such methods.

Abstract: A method of fabricating a semiconducting device is disclosed. A carbon nanotube is deposited on a substrate of the semiconducting device. A first contact on the substrate over the carbon nanotube. A second contact on the substrate over the carbon nanotube, wherein the second contact is separated from the first contact by a gap. A portion of the substrate in the gap between the first contact and the second contact is removed.

Abstract: A system, apparatus and method employing carbon nanotubes on substrates such as silicon, titanium, copper, stainless steel and other substrates, where the carbon nanotubes are blacker than existing paints and coatings, thereby providing an exponential increase in stray light suppression depending on the number of bounces of such treated surfaces. Additionally, the present invention is directed to techniques to better absorb and radiate unwanted energies. Further, the alternate substrates offer strength of material for numerous components and in numerous physical applications. The present invention is also directed to techniques for improving the adhesion of the nanotubes to the alternate substrate materials and also extending the wavelength of operation from the near ultraviolet to the far infrared portion of the spectrum (0.2 microns to 120 microns wavelength).

Abstract: The present invention, in one embodiment, provides a method of forming an organic electric device that includes providing a plurality of carbon nanostructures; and dispersing the plurality of carbon nanostructures in a polymeric matrix to provide a polymeric composite, wherein when the plurality of carbon nanostructures are present at a first concentration an interface of the plurality of carbon nanostructures and the polymeric matrix is characterized by charge transport when an external energy is applied, and when the plurality of carbon nanostructures are present at a second concentration the interface of the plurality of carbon nanostructures and the polymeric matrix are characterized by exciton dissociation when an external energy is applied, wherein the first concentration is less than the second concentration.

Abstract: A method for depositing graphene is provided. The method includes depositing a layer of non-conducting amorphous carbon over a surface of a substrate and depositing a transition metal in a pattern over the amorphous carbon. The substrate is annealed at a temperature below 500° C., where the annealing converts the non-conducting amorphous carbon disposed under the transition metal to conducting amorphous carbon. A portion of the pattern of the transition metal is removed from the surface of the substrate to expose the conducting amorphous carbon.

Abstract: A graphene semiconductor including graphene and a metal atomic layer disposed on the graphene, wherein the metal atomic layer includes a metal, which is capable of charge transfer with the graphene.

Abstract: A method of making an anode includes the steps of providing fibers from a carbonaceous precursor, the carbon fibers having a glass transition temperature Tg. In one aspect the carbonaceous precursor is lignin. The carbonaceous fibers are placed into a layered fiber mat. The fiber mat is fused by heating the fiber mat in the presence of oxygen to above the Tg but no more than 20% above the Tg to fuse fibers together at fiber to fiber contact points and without melting the bulk fiber mat to create a fused fiber mat through oxidative stabilization. The fused fiber mat is carbonized by heating the fused fiber mat to at least 650° C. under an inert atmosphere to create a carbonized fused fiber mat. A battery anode formed from carbonaceous precursor fibers is also disclosed.

Abstract: The present invention provides a method for preparing graphene, including reacting graphite in an acid solution in which an oxidant is present so as to obtain a graphene. Compared with the prior art, the advantages of the present invention reside in that, the graphene prepared by the method of the present invention has excellent quality and substantially increased yield and production rate, as compared with mechanical stripping, epitaxial growth, and chemical vapor deposition; and the graphene prepared by the method of the present invention has significantly improved quality, substantially reduced structural defects, and significantly increased conductivity, as compared with oxidation-reduction preparation in the solution-phase; besides, the method is also advantageous for a simple process, mild conditions, low cost, and very easy for scale production.

Abstract: A patterning method for the creation of two-dimensional nanowire structures. Nanowire patterning methods are used with lithographical patterning approaches to form patterns in a layer of epoxy and resist material. These patterns are then transferred to an underlying thin film to produce a two-dimensional structure with desired characteristics.

Abstract: A chalcogen-resistant material including at least one of a carbon nanotube layer and a high work function material layer is deposited on a transition metal layer on a substrate. A semiconductor chalcogenide/kesterite material layer is deposited over the chalcogen-resistant material. The carbon nanotubes, if present, can reduce contact resistance by providing direct electrically conductive paths from the transition metal layer through the chalcogen-resistant material and to the semiconductor chalcogenide material. The high work function material layer, if present, can reduce contact resistance by reducing chalcogenization of the transition metal in the transition metal layer. Reduction of the contact resistance can enhance efficiency of a solar cell including the chalcogenide semiconductor material.

Abstract: A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the carbon-nanotube, respectively, and a gate formed substantially over a portion of the carbon-nanotube, separated from the carbon-nanotube by a dielectric film.

Abstract: Processing a composite material includes forming a nanomaterial comprising nanotubes. The nanotubes comprise first nanotubes and second nanotubes, where the first nanotubes and the second nanotubes have different lengths. The nanomaterial is combined with a matrix to yield a composite material.

Abstract: A method for making a liquid crystal display module is provided. In the method, a first polarizing layer is provided. A free-standing transparent conductive layer is disposed on a surface of the first polarizing layer. At least two driving-sensing electrodes are disposed on a surface of the transparent conductive layer and spaced from the first polarizing layer. The at least two driving-sensing electrodes are spaced from each other and electrically connected with the transparent conductive layer. The first polarizing layer, the at least two driving-sensing electrodes, and the transparent conductive layer cooperatively form a polarizer. The polarizer is fixed to a liquid crystal module to form the liquid crystal display module.

Abstract: Aspects of the invention are directed to a method for forming a graphene composite structure. Initially, an encapsulating film is formed on a substrate. The encapsulating film comprises graphene. Subsequently, a plurality of particles are deposited on the encapsulating film, and then a temporary layer is deposited on the plurality of active particles and the encapsulating film. The substrate is then removed. Lastly, the temporary layer is also removed so as to cause the plurality of particles to form a cluster that is at least partially encapsulated by the encapsulating film.

Abstract: According to example embodiments, a field effect transistor includes a graphene channel layer on a substrate. The graphene channel layer defines a slit. A source electrode and a drain electrode are spaced apart from each other and arranged to apply voltages to the graphene channel layer. A gate insulation layer is between the graphene channel layer and a gate electrode.

Abstract: The variable hydraulic preform slurry electrolyte carbon extrusion high wear-heat resistant parts press is utilized process specified scientific formula liquid or gas Nano particle dispersion preform slurry electrolyte extrusion carbon nanofoam CNFs, with or without ionic suspension element 1. preform slurry electrolyte carbon nanofoam CNFs extrusion high wear-heat resistant parts electronic component composite coils, composite windings, brushes, inductors, antinode couplers, electric rheostats, starters, motors, alternators, generators, ionic suspension element enhanced composite coils, composite windings, brushes, capacitors, battery cells, rheostats, electronic resistors, transformers, transducers, rectifiers, power supplies, or heat sinks 2. Preform slurry electrolyte carbon nanofoam CNFs extrusion high wear-heat resistant parts aerospace, automotive, and transportation brake calipers, rotors, pads, and bushings 3.

Abstract: The present disclosure relates to a method for making a carbon nanotube film. In the method, a bent flexible substrate having a curved surface and a pressing device are provided. A carbon nanotube array is formed on the curved surface. The bent flexible substrate is at least partially unbent, thereby at least partially unbending the carbon nanotube array. The unbent carbon nanotube array is pressed by the pressing device to slant the carbon nanotubes in the unbent carbon nanotube array, thereby forming the carbon nanotube film.

Abstract: A semiconductor structure including nanotubes forming an electrical connection between electrodes is disclosed. The semiconductor structure may include an open volume defined by a lower surface of an electrically insulative material and sidewalls of at least a portion of each of a dielectric material and opposing electrodes. The nanotubes may extend between the opposing electrodes, forming a physical and electrical connection therebetween. The nanotubes may be encapsulated within the open volume in the semiconductor structure. A semiconductor structure including nanotubes forming an electrical connection between source and drain regions is also disclosed. The semiconductor structure may include at least one semiconducting carbon nanotube electrically connected to a source and a drain, a dielectric material disposed over the at least one semiconducting carbon nanotube and a gate dielectric overlying a portion of the dielectric material. Methods of forming the semiconductor structures are also disclosed.

Abstract: A method of preparing graphene nanoribbons from a few-layer graphene film includes the steps of growing or placing a few-layer graphene film on a substrate, applying nanoparticles to a surface of the few-layer graphene layer on the substrate and performing chemical vapor etching. The resulting few-layer graphene nanoribbon has a thickness of between about 0.3 nm and about 50.0 nm and a width of between about 1.0 nm and about 20.0 nm.

Abstract: Techniques, apparatus and systems are described for wafer-scale processing of aligned nanotube devices and integrated circuits. In one aspect, a method can include growing aligned nanotubes on at least one of a wafer-scale quartz substrate or a wafer-scale sapphire substrate. The method can include transferring the grown aligned nanotubes onto a target substrate. Also, the method can include fabricating at least one device based on the transferred nanotubes.

Abstract: An apparatus and a method for dispersing particulate materials prone to agglomeration, in a liquid. Particulate materials are exposed to a liquid and put into that liquid to form a suspension or a dispersion in a controlled method thereby minimizing agglomerates. The method uses mechanical/hydro mixing that prevents the physical deterioration of the particulate material and inhibits agglomeration of the particles. In many cases, these materials may be nanomaterials. Almost all particulate materials can be handled in this manner. This method has been found to be especially useful for preparing solutions of exfoliated graphene and certain drugs.

Abstract: An apparatus comprises a first dielectric layer formed over a substrate, a first metal line embedded in the first dielectric layer, a second dielectric layer formed over the first dielectric layer, a second metal line embedded in the second dielectric layer, an interconnect structure formed between the first metal line and the second metal line, a first carbon layer formed between the first metal line and the interconnect structure and a second carbon layer formed between the second metal line and the interconnect structure.

Abstract: The method of forming carbon nanotubes from carbon-rich fly ash is a chemical vapor deposition-based method for forming carbon nanotubes from recycled carbon-rich fly ash. The method includes first ultrasonically treating the carbon-rich fly ash to produce an ultrafine powdered ash, and then reacting the ultrafine powdered ash in a low pressure chemical vapor deposition reactor to form the carbon nanotubes. The ultrasonic treatment of the carbon-rich fly ash includes the steps of dissolving the carbon-rich fly ash in water to form a solution, then sonicating the solution, separating the ultrafine powdered ash from the solution, and finally drying the ultrafine powdered ash. The method provides for total conversion of the carbon-rich fly ash to carbon nanotubes having a variety of differing diameters and lengths, including multi-walled carbon nanotubes with a high degree of wall graphitization and C?C double bonds stretching at 1635 cm?1.

Abstract: In the growth of carbon nanotubes, the aggregation of catalytic fine particles therefor is a problem. In order to realize the growth of carbon nanotubes into a high density, the carbon nanotube growing process includes a first plasma treatment step of treating a surface having catalytic fine particles with a plasma species generated from a gas which contains at least hydrogen or a rare gas without carbon element, a second plasma treatment step of forming a carbon layer on the surface of the catalytic fine particles by a plasma generated from a gas which contains at least a hydrocarbon after the first plasma treatment step, and a carbon nanotube growing step of growing carbon nanotubes by use of a plasma generated from a gas which contains at least a hydrocarbon after the second plasma treatment step.

Abstract: A graphene-based electrically tunable nanoconstriction device and a non-transitory tangible computer readable medium encoded with a program for fabricating the device that includes a back-gate dielectric layer over a conductive substrate are described. The back-gate dielectric layer may be hexagonal boron nitride, mica, SiOx, SiNx, BNx, HfOx or AlOx. A graphene layer is an AB-stacked bi-layer graphene layer, an ABC-stacked tri-layer graphene layer or a stacked few-layer graphene layer. Contacts formed over a portion of the graphene layer include at least one source contact, at least one drain contact and at least one set of side-gate contacts. A graphene channel with graphene side gates is formed in the graphene layer between at least one source contact, at least one the drain contact and at least one set of side-gate contacts. A top-gate dielectric layer is formed over the graphene layer. A top-gate electrode is formed on the top-gate dielectric layer.

Abstract: Method for the manufacture of carbon nanotubes by thermal decomposition of at least one gaseous hydrocarbon (14) in the presence of a solid catalyst in a reactor (4) into which the catalyst is introduced via an inlet lock chamber (17) flushed by an inert gas (21, 22, 25, 26) and from which the carbon nanotubes are withdrawn via an outlet lock chamber (37) which is flushed with a flow of inert gas (39, 40).

Abstract: Disclosed is a method for fabricating graphene ribbons, comprising: preparing a graphitic material comprising stacked graphene helices; and cutting the graphitic material in a short form by applying energy to the graphitic material; and simultaneously or afterward, decomposing the graphitic material into short graphene ribbons. This method provides a mass production route to graphene ribbons.

Abstract: A graphene electronic device and a method of fabricating the graphene electronic device are provided. The graphene electronic device may include a graphene channel layer formed on a hydrophobic polymer layer, and a passivation layer formed on the graphene channel layer. The hydrophobic polymer layer may prevent or reduce adsorption of impurities to transferred graphene, and a passivation layer may also prevent or reduce adsorption of impurities to a heat-treated graphene channel layer.

Abstract: A power storage device including a negative electrode having high cycle performance in which little deterioration due to charge and discharge occurs is manufactured. A power storage device including a positive electrode, a negative electrode, and an electrolyte provided between the positive electrode and the negative electrode is manufactured, in which the negative electrode includes a negative electrode current collector and a negative electrode active material layer, and the negative electrode active material layer includes an uneven silicon layer formed over the negative electrode current collector, a silicon oxide layer or a mixed layer which includes silicon oxide and a silicate compound and is in contact with the silicon layer, and graphene in contact with the silicon oxide layer or the mixed layer including the silicon oxide and the silicate compound.

Abstract: Methods and processes for synthesizing high quality carbon single-walled nanotubes (SWNTs) are provided. The method provides the means for optimization of amount of carbon precursor and transport gas per unit weight of catalyst. In certain aspects, methods are provided wherein a supported metal catalyst is contacted with a carbon precursor gas at about one atmosphere pressure, wherein SWNTs are synthesized at a growth rate of about 0.002 ?m/sec to about 0.003 ?m/sec and the SWNTs have a ratio of G-band to D-band in Raman spectra (IG:ID) of greater than about 4. Efficiencies of about 20% can be achieved when contacting the catalyst deposited on a support with a carbon precursor gas with a flow rates of about 4.2×10?3 mol CH4/sec·g (Fe) at 780° C. Hydrocarbon flow rates of about 1.7 10?2 mol CH4/sec·g (Fe) and higher result in faster carbon SWNTs growth with improved quality. Slower rates of carbon atoms supply (˜4.5×1020 C atoms/s·g Fe or 6.

Abstract: Carbon nanotube compositions suitable for printing, methods of making carbon nanotube compositions, and substrates having a print thereon containing carbon nanotube compositions, and uses thereof. The carbon nanotubes of the compositions are individualized. The carbon nanotube compositions can be used in applications, such as document security.

Abstract: Flame retardant composite materials are provided which include at least one first paper which comprises carbon nanofibers and graphite oxide particles. The composite materials may further include at least one second paper which comprises carbon nanofibers. The composites may further include one or more structural material layers sandwiched between the first and second papers. Occupant structures are also provided with fire and smoke retardant surfaces composed of carbon nanofibers/graphite oxide particles papers at least partially surrounding occupants of the occupant structures.

Abstract: Graphene transistor devices and methods of their fabrication are disclosed. In accordance with one method, a resist is deposited to pattern a gate structure area over a graphene channel on a substrate. In addition, gate dielectric material and gate electrode material are deposited over the graphene channel and the resist. Further, the resist and the electrode and dielectric materials that are disposed above the resist are lifted-off to form a gate structure including a gate electrode and a gate dielectric spacer and to expose portions of the graphene channel that are adjacent to the gate structure. Additionally, source and drain electrodes are formed over the exposed portions of the graphene channel.

Abstract: A method for growing carbon nanoflakes includes inducing partial etching of graphene layers of carbon nanotubes through an adequate composition of precursor gases, CH4, H2 and Ar, while allowing carbon nanoflakes to grow at the etched site in a plane-like shape. A carbon nanoflake structure is formed by the same method. The method for growing carbon nanoflakes includes: providing a silicon substrate having carbon nanotubes; and growing carbon nanoflakes on the carbon nanotubes through a chemical vapor deposition process using a mixed gas of CH4, H2 and Ar as a precursor. During the chemical vapor deposition process, the mixed gas of CH4, H2 and Ar is in an atmosphere with excess Ar, graphene layers forming the carbon nanotubes are etched partially under the atmosphere with excess Ar, and graphene layers of carbon nanoflakes are grown at the etched site.

Abstract: Graphene-channel based devices and techniques for the fabrication thereof are provided. In one aspect, a semiconductor device includes a first wafer having at least one graphene channel formed on a first substrate, a first oxide layer surrounding the graphene channel and source and drain contacts to the graphene channel that extend through the first oxide layer; and a second wafer having a CMOS device layer formed in a second substrate, a second oxide layer surrounding the CMOS device layer and a plurality of contacts to the CMOS device layer that extend through the second oxide layer, the wafers being bonded together by way of an oxide-to-oxide bond between the oxide layers. One or more of the contacts to the CMOS device layer are in contact with the source and drain contacts. One or more other of the contacts to the CMOS device layer are gate contacts for the graphene channel.

Abstract: The present invention provides a method of making a carbon nanotubes fiber by providing a polyethylene terephthalate substrate; contacting the polyethylene terephthalate substrate with a polyvinyl alcohol polymer solution to form a polyvinyl alcohol polymer layer on the polyethylene terephthalate substrate; contacting the polyvinyl alcohol polymer layer with a carbon nanotube solution, wherein the carbon nanotubes solution comprises one or more carbon nanotubes; forming a nanotube layer on the polyvinyl alcohol polymer layer; delaminating the polyvinyl alcohol polymer layer from the polyethylene terephthalate substrate to release a composite fiber layer; stretching the composite fiber layer; and drying the composite fiber layer.

Abstract: A single step process for degrading plastic waste by converting the plastic waste into carbonaceous products via thermal decomposition of the plastic waste by placing the plastic waste into a reactor, heating the plastic waste under an inert or air atmosphere until the temperature of about 700° C. is achieved, allowing the reactor to cool down, and recovering the resulting decomposition products therefrom. The decomposition products that this process yields are carbonaceous materials, and more specifically carbon nanotubes having a partially filled core (encapsulated) adjacent to one end of the nanotube. Additionally, in the presence of a transition metal compound, this thermal decomposition process produces multi-walled carbon nanotubes.

Abstract: The present disclosure relates to a method for making carbon nanotube structure. A substrate having a growing surface is provided. A carbon nanotube layer is placed on the growing surface of the substrate. Part of the growing surface is exposed from the carbon nanotube layer. A number of first catalysts are deposited on surface of the carbon nanotube layer and a number of second catalysts are deposited on the growing surface. A carbon nanotube array is grown on the growing surface and a carbon nanotube cluster is grown on surface of the carbon nanotube layer.

Abstract: A graphene sheet film as a film-like assembly of two or more graphene sheets 11 to 25 is provided. The graphene sheet film uses a graphene sheet assembly 101 that includes: first carbon nanotubes 31 to 48 that join the graphene sheets 11 to 25 to each other and form graphene sheet laminates 61 to 65 in which the graphene sheets 11 to 25 are laminated with the sheet planes being paralleled to each other; and second carbon nanotubes 51 to 56 that connect the graphene sheet laminates 61 to 65 to each other. This makes it possible to provide a graphene sheet film having high capacitor performance with respect to energy density and output density, a method for producing the same, and a graphene sheet capacitor using such graphene sheet films.

Abstract: A system that incorporates teachings of the subject disclosure may include, for example, a method for depositing a first material that substantially covers a nanoheater, applying a signal to the nanoheater to remove a first portion of the first material covering the nanoheater to form a trench aligned with the nanoheater, depositing a second material in the trench, and removing a second portion of the first material and a portion of the second material to form a nanowire comprising a remaining portion of the second material covering the nanoheater along the trench. Additional embodiments are disclosed.