Search Patents
  • Patent number: 6716409
    Abstract: A method of fabricating SWNT probes for use in atomic force microscopy is disclosed. In one embodiment, the SWNT's are fabricated using a metallic salt solution. In another embodiment, the SWNT's are fabricated using metallic colloids.
    Type: Grant
    Filed: September 18, 2001
    Date of Patent: April 6, 2004
    Assignee: President and Fellows of the Harvard College
    Inventors: Jason H. Hafner, Chin Li Cheung, Charles M. Lieber
  • Publication number: 20020122766
    Abstract: A method of producing carbon single wall nanotubes (SWNT) by CVD is disclosed. The SWNTs are grown on a metal-catalyzed support surface, such as a commercially available silicon tips for atomic force microscopes (AFM). The growth characteristics of the SWNTs can be controlled by adjusting the density of the catalyst and the CVD growth conditions. The length of the SWNTs can be adjusted through pulsed electrical etching. Nanotubes of this type can find applications in nanotubes structures with defined patterns and for nano-tweezers. Nano-tweezers may be useful for manipulating matter, such as biological material, on a molecular level.
    Type: Application
    Filed: September 28, 2001
    Publication date: September 5, 2002
    Inventors: Charles M. Lieber, Jason H. Hafner, Chin Li Cheung, Philip Kim
  • Patent number: 6743408
    Abstract: A method of producing carbon single wall nanotubes (SWNT) by CVD is disclosed. The SWNTs are grown on a metal-catalyzed support surface, such as a commercially available silicon tips for atomic force microscopes (AFM). The growth characteristics of the SWNTs can be controlled by adjusting the density of the catalyst and the CVD growth conditions. The length of the SWNTs can be adjusted through pulsed electrical etching. Nanotubes of this type can find applications in nanotubes structures with defined patterns and for nano-tweezers. Nano-tweezers may be useful for manipulating matter, such as biological material, on a molecular level.
    Type: Grant
    Filed: September 28, 2001
    Date of Patent: June 1, 2004
    Assignee: President and Fellows of Harvard College
    Inventors: Charles M. Lieber, Jason H. Hafner, Chin Li Cheung, Philip Kim
  • Patent number: 7666708
    Abstract: A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal is, axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less an 5 nanometers. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and a variety assembling techniques may be used to fabricate devices from such a semiconductor.
    Type: Grant
    Filed: October 4, 2006
    Date of Patent: February 23, 2010
    Assignee: President and Fellows of Harvard College
    Inventors: Charles M. Lieber, Yi Cui, Xiangfeng Duan, Yu Huang
  • Patent number: 7211464
    Abstract: A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and may have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1.
    Type: Grant
    Filed: March 17, 2005
    Date of Patent: May 1, 2007
    Assignee: President & Fellows of Harvard College
    Inventors: Charles M. Lieber, Yi Cui, Xiangfeng Duan, Yu Huang