Abstract: The present disclosure relates to a method of making fancy orange synthetic CVD diamond material. Among other things, the method may involve (i) providing a single crystal diamond material that has been grown by CVD and has a [Ns0] concentration less than 5 ppm; (ii) irradiating the provided CVD diamond material so as to introduce isolated vacancies V into at least part of the provided CVD diamond material such that the total concentration of isolated vacancies [VT] in the irradiated diamond material is at least the greater of (a) 0.5 ppm and (b) 50% higher than the [Ns0] concentration in ppm in the provided diamond material; and (iii) annealing the irradiated diamond material to forming vacancy chains from at least some of the introduced isolated vacancies.

Abstract: A method of introducing NV centers in single crystal CVD diamond material is described. One step of the method comprises irradiating diamond material that contains single substitutional nitrogen to introduce isolated vacancies into the diamond material in a concentration of at least 0.05 ppm and at most 1 ppm. Another step of the method comprises annealing the irradiated diamond to form NV centers from at least some of the single substitutional nitrogen defects and the introduced isolated vacancies.

Abstract: Disclosed is a combinatorial synthesis of Diamond wherein a first reactive species is produced by catalytic treatment of Acetylene, a second reactive species is produced by decomposition of a hydrocarbon source having a low Hydrogen-to-Carbon ratio using a high energy discharge, and the two reactive species so obtained are combined in the vapor phase to yield Diamond without the need of post-treatments. The reaction is efficient and affords Diamond under mild conditions with high purity such that it may be useful for producing Diamond for semiconductor and microelectronics applications.

Abstract: Disclosed are high resistivity silicon wafers, wherein the interstitial oxygen concentration thereof is 8×1017 atoms/cm3 (ASTM F121-1979) or less, BMD (Bulk Micro Defect) density—oxygen precipitate within wafer—is 5×107 pieces/cm3 or less, and an electric resistivity thereof is 100 ?·cm or more. And further disclosed are high resistivity silicon wafers having an electric resistivity of 100 ?·cm or more, which are cut from crystal region where no COP (Crystal Originated Particle) exist, and in which neither COP (Crystal Originated Particle) nor oxygen precipitate exist at the area from wafer surface to the depth of 5 ?m or more owing to high temperature treatment. It is preferable that, in said high resistivity wafers, carbon concentration in wafers is 1×1016 atoms/cm3 or more (ASTM F123-1981), and/or nitrogen concentration is 1×1013 atoms/cm3 or more.

Abstract: The present invention provides for treating a surface of a semiconductor material. The method comprises exposing the surface of the semiconductor material to a halogen etchant in a hydrogen environment at an elevated temperature. The method controls the surface roughness of the semiconductor material. The method also has the unexpected benefit of reducing dislocations in the semiconductor material.

Abstract: A method for producing crystallized silicon according to the EFG process by using a shaping part, between which part and a silicon melt, crystallized silicon grows in a growth zone. Inert gas and at least water vapor are fed into the silicon melt and/or growth zone, by means of which the oxygen content of the crystallized silicon is increased. From 50 to 250 ppm of vapor water is added to the inert gas, and the inert gas has an oxygen, CO and/or CO2 content of less than 20 ppm total.

Abstract: A method for producing a silicon single crystal by the Czochralski method with carbon-doping comprising: charging a polycrystalline silicon material and any one of a carbon dopant selected from the group consisting of an organic compound, an organic compound and a silicon wafer, carbon powder and a silicon wafer, an organic compound and carbon powder, and an organic compound and carbon powder and a silicon wafer into a crucible and melting the polycrystalline silicon material and the carbon dopant; and then growing a silicon single crystal from the melt of the polycrystalline silicon material and the carbon dopant. And a carbon-doped silicon single crystal produced by the method. Thereby, there is provided a method for producing a silicon single crystal with carbon-doping in which the crystal can be doped with carbon easily at low cost, and carbon concentration in the crystal can be controlled precisely.

Abstract: The invention refers to a method and apparatus for CVD coating and to a coated body. To improve the mechanical properties of the structure and surface of the body and to make the method and apparatus as simple and cost-effective as possible, it is suggested in the method, in which a layer is deposited on a substrate in a carbon-containing gas atmosphere: that the process parameters be varied during the coating period in such a way that during the coating period a first operating mode and a second operating mode are repeatedly alternated, wherein in the first operating mode a higher carbon over-saturation of the gas atmosphere occurs near the substrate, and in the second operating mode a lower carbon over-saturation of the gas atmosphere occurs near the substrate. In this way, a body can be produced with a substrate and at least one layer deposited on the surface of the substrate, wherein the layer consists of nano-crystalline diamond.

Abstract: Unpolished semiconductor wafers are produced by: (a) pulling a single crystal of a semiconductor material, (b) grinding the single crystal round, (c) separating a semiconductor wafer from this crystal, (d) rounding the edge of the semiconductor wafer, (e) surface-grinding at least one side of the semiconductor wafer, (f) treating the semiconductor wafer with an etchant, and (g) cleaning the semiconductor wafer. The unpolished semiconductor wafers have, on at least the front side, a reflectivity of 95% or more, a surface roughness of 3 nm or less, have a thickness of 80-2500 ?m, an overall planarity value GBIR of 5 ?m or less with an edge exclusion of 3 mm and a photolithographic resolution of at least 0.8 ?m, and which furthermore contain a native oxide layer with a thickness of 0.5-3 nm on both sides.

Abstract: The present invention relates to a crystal of ACE protein. The present invention further relates to methods, processes, ACE modulators, pharmaceutical compositions and uses of ACE crystal and the structure coordinates thereof.

Abstract: Methods of making Si-containing films that contain relatively high levels of substitutional dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels of substitutional incorporation may be obtained, including crystalline silicon films that contain 2.4 atomic % or greater substitutional carbon. Substitutionally doped Si-containing films may be selectively deposited onto the crystalline surfaces of mixed substrates by introducing an etchant gas during deposition.

Abstract: The present invention provides a process for manufacturing a semiconductor device that can be incorporated into an integrated circuit. The method includes, forming a first doped layer of isotopically enriched silicon over a foundational substrate, forming a second layer of an isotopically enriched semiconductor material silicon over the first doped layer, and constructing active devices on the second layer. The device includes a first doped layer of an isotopically enriched semiconductor material and a second layer of an isotopically enriched semiconductor material located over the first doped layer, and active devices located on the second layer.

Abstract: A method of forming a highly doped layer of AlGaN, is practiced by first removing contaminants from a MBE machine. Wafers are then outgassed in the machine at very low pressures. A nitride is then formed on the wafer and an AlN layer is grown. The highly doped GaAlN layer is then formed having electron densities beyond 1×1020 cm?3 at Al mole fractions up to 65% are obtained. These levels of doping application of n-type bulk, and n/p tunnel injection to short wavelength UV emitters. Some applications include light emitting diodes having wavelengths between approximately 254 and 290 nm for use in fluorescent light bulbs, hazardous materials detection, water purification and other decontamination environments. Lasers formed using the highly doped layers are useful in high-density storage applications or telecommunications applications. In yet a further embodiment, a transistor is formed utilizing the highly doped layer as a channel.

Abstract: The invention relates to a process for producing highly doped semiconductor wafers, in which at least two dopants which are electrically active and belong to the same group of the periodic system of the elements are used for the doping. The invention also relates to a semiconductor wafer which is free of dislocations and is doped with at least two electrically active dopants which belong to the same group of the periodic system of the elements.

Abstract: Photonic crystal units (10a, 10b, and 10c) are formed by an optical molding process using a photocurable resin, and partitions (11) are provided at the boundaries therebetween. The voids in each photonic crystal unit are filled with a second substance containing ceramic particles dispersed therein to form a filled portion 2. A plurality of three-dimensional periodic structure units containing the first and second substances distributed with three-dimensional periodicity are arranged so as to have different ratios between the dielectric constants of the first and second substances. Therefore, present invention provides a three-dimensional periodic structure having a wide photonic band gap which could not be obtained in a conventional three-dimensional periodic structure.

Abstract: A silicon annealed wafer having a sufficient thick layer free from COP defects on the surface, and a sufficient uniform BMD density in the inside can be produced by annealing either a base material wafer having nitrogen at a concentration of less than 1×1014 atoms/cm3, COP defects having a size of 0.1 ?m or less in the highest frequency of occurrence and no COP defects having a size of 0.2 ?m or more, oxygen precipitates at a density of 1×104 counts/cm2 or more, and BMDs (oxygen precipitates), where the ratio of the maximum to the minimum of the BMD density in the radial direction of the wafer is 3 or less, or a base material wafer grown at specific average temperature gradients within specific temperature ranges and specific cooling times for a single crystal at a nitrogen concentration of less than 1×1014 atoms/cm3, employing the Czochralski method.

Abstract: A layer of single crystal boron doped diamond produced by CVD and having a total boron concentration which is uniform. The layer is formed from a single growth sector, or has a thickness exceeding 100 ?m, or has a volume exceeding 1 mm3, or a combination of such characteristics.

Abstract: A single crystal silicon ingot having a constant diameter portion that contains arsenic dopant atoms at a concentration which results in the silicon having a resistivity that is less than about 0.003 ?·cm.

Abstract: The invention has as an object proving a carbon nanomaterial fabrication method that can continuously mass-produce a high purity carbon a nanomaterial. The tube-shaped or fiber-shaped carbon nanomaterial having carbon as the main constituent is fabricated with a compound that includes carbon (raw material) and an additive that includes a metal by using a fluidized bed reactor.

Abstract: A process for the preparation of a silicon single ingot in accordance with the Czochralski method. The process for growing the single crystal silicon ingot comprises controlling (i) a growth velocity, v, (ii) an average axial temperature gradient, G0, during the growth of a constant diameter portion of the crystal over a temperature range from solidification to a temperature of no less than about 1325° C. to initially produce in the constant diameter portion of the ingot a series of predominant intrinsic point defects including vacancy dominated regions and silicon self interstitial dominated regions, alternating along the axis, and cooling the regions from the temperature of solidification at a rate which allows silicon self-interstitial atoms to diffuse radially to the lateral surface and to diffuse axially to vacancy dominated regions to reduce the concentration intrinsic point defects in each region.

Abstract: The present invention relates to a process for preparing a single crystal silicon ingot, as well as to the ingot or wafer resulting therefrom. The process comprises controlling (i) a growth velocity, v, (ii) an average axial temperature gradient, G0, and (iii) a cooling rate of the crystal from solidification to about 750° C., in order to cause the formation of a segment having a first axially symmetric region extending radially inward from the lateral surface of the ingot wherein silicon self-interstitials are the predominant intrinsic point defect, and a second axially symmetric region extending radially inward from the first and toward the central axis of the ingot.

Abstract: A silicon wafer is provided having controlled distribution of defects, in which denuded zones having a sufficient depth inward from the surface of the wafer are combined with a high gettering effect in a bulk region of the wafer. In the silicon wafer, oxygen precipitates, which act as intrinsic gettering sites, show vertical distribution. The oxygen precipitate concentration profile from the top to the bottom surfaces of the wafer includes first and second peaks at first and second predetermined depths from the top and bottom surfaces of the wafer, denuded zones between the top and bottom surfaces of the wafer and each of the first and second peaks, and a concave region between the first and second peaks, which corresponds to a bulk region of the wafer. For such an oxygen precipitate concentration profile, the wafer is exposed to a rapid thermal annealing process in a gas mixture atmosphere comprising ammonia (NH3) and argon (Ar) at temperatures below about 1200° C.

Abstract: A process for manufacturing silicon wafers that reduces the size of silicon wafer surface and/or sub-surface defects without the forming excessive haze. The process entails cleaning the front surface of the silicon wafer at a temperature of at least about 1100° C. by exposing the front surface to a cleaning ambient comprising H2, HF gas, or HCl gas to remove silicon oxide from the front surface and exposing the cleaned front surface of the silicon wafer at a temperature of at least about 1100° C. to a vacuum or an annealing ambient consisting essentially of a mono-atomic noble gas selected from the group consisting of He, Ne, Ar, Kr, and Xe to facilitate the migration of silicon atoms to the exposed agglomerated defects without substantially etching silicon from the front surface of the heated silicon wafer.

Abstract: There are provided silicon single crystal, silicon wafer, and epitaxial wafer having a sufficient gettering effect suitable for a large-scale integrated device. The silicon single crystal which is suitable for an epitaxial wafer is grown with nitrogen doping at a concentration of 1×1013 atoms/cm3 or more, or with nitrogen doping at a concentration of 1×1012 atoms/cm3 and carbon doping at a concentration of 0.1×1016−5×1016 atoms/cm3 and/or boron doping at a concentration of 1×1017 atoms/cm3 or more. The silicon wafer is produced by slicing from the silicon single crystal, and an epitaxial layer is grown on a surface of the silicon wafer to produce the epitaxial wafer. The present invention provides an epitaxial wafer for a large-scale integrated device having no defects in a device-active region and having an excellent gettering effect without performance of an extrinsic or intrinsic gettering treatment.

Abstract: A crystal filter and a method of making a crystal filter capable of transmitting radiation within a particular pass band is disclosed. The crystal filter is particularly appropriate for a UV detection system, where the pass band is between about 200 to about 350 nm. A UV detection system incorporating the crystal filter is also described. One embodiment of crystal filter is formed from a single-crystal transparent host, such as a fluoride host, codoped with lanthanide or actinide fluorides and lanthanide or actinide nitrides, oxides, borides, carbides or hydroxides. Filter crystals according to the present invention can be grown by various crystal growth methods, including Czochralski and Bridgeman crystal growth methods.

Abstract: A process for heat-treating a single crystal silicon wafer to influence the precipitation behavior of oxygen in the wafer in a subsequent thermal processing step. The wafer has a front surface, a back surface, and a central plane between the front and back surfaces. In the process, the wafer is subjected to a heat-treatment to form crystal lattice vacancies in the wafer. During the heat-treatment, the front and back surfaces of the wafer are each exposed to either a nitriding or non-nitriding gas. The wafer is then cooled from the temperature of said heat treatment at a rate which allows some, but not all, of the crystal lattice vacancies to diffuse to the front surface to produce a wafer having a vacancy concentration profile determined in part by the gas that each surface is exposed to and in part by the cooling rate.

Abstract: A semiconductor wafer has a front side 1, a back side 2, a top layer 3, a bottom layer 4, an upper inner layer 5 lying below the top layer 3, a lower inner layer 6 lying above the bottom layer 4, a central region 7 between the layers 5 and 6 an uneven distribution of crystal lattice defects. The concentration of the defects exhibits a first maximum (max1) in the central region 7 and a second maximum (max2) in the bottom layer 4.

Abstract: The present invention relates to a single crystalline silicon ingot, a single crystalline wafer, and a producing method thereof in accordance with the Czochralski method which enables reduction of a large defect area while increasing a micro-vacancy defect area in an agglomerated vacancy point area, which is the area between a central axis and an oxidation-induced stacking fault ring, by providing uniform conditions of crystal ingot growth and cooling and by adjusting a pulling rate for growing an ingot to grow, thus the oxidation-induced stacking fault ring exists only at an edge of the ingot radius.

Abstract: A silicon ingot is manufactured in a hot zone furnace by pulling the ingot from a silicon melt in the hot zone furnace in an axial direction, at a pull rate profile of the ingot from the silicon melt in the hot zone furnace that is sufficiently high so as to prevent interstitial agglomerates but is sufficiently low so as to confine vacancy agglomerates to a vacancy rich region at the axis of the ingot. The ingot so pulled is sliced into a plurality of semi-pure wafers each having a vacancy rich region at the center thereof that includes vacancy agglomerates and a pure region between the vacancy rich region and the wafer edge that is free of vacancy agglomerates and interstitial agglomerates.

Abstract: Bulk, low impurity aluminum nitride (AlN) single crystals are grown by sublimation or similar deposition techniques at growth rates greater than 0.5 mm/hr.

Abstract: This invention is directed to a novel a single crystal silicon wafer. The wafer comprises: (a) two major generally parallel surfaces (ie., the front and back surfaces); (b) a central plane between and parallel to the front and back surfaces; (c) a front surface layer which comprises the region of the wafer extending a distance of at least about 10 &mgr;m from the front surface toward the central plane; and (d) a bulk layer which comprises the region of the wafer extending from the central plane to the front surface layer.

Abstract: A first layer having a same conductivity and a substantially identical concentration as a CZ substrate having a high impurity concentration is formed by a vapor phase growth process on the substrate directly, a pressure is changed to purge an atmosphere, and then a second layer having a same conductivity as the substrate and having a lower concentration by 3 or more orders of magnitude than the substrate is formed by the vapor phase growth process. Thereby there is simply and inexpensively formed a silicon single crystal thin film by the vapor phase growth process which film has no crystal defective layer and has a dopant concentration abruptly changing at an interface between the film and a high concentration layer.

Abstract: A photonic crystal device and method. The photonic crystal device comprises a substrate with at least one photonic crystal formed thereon by a charged-particle beam deposition method. Each photonic crystal comprises a plurality of spaced elements having a composition different from the substrate, and may further include one or more impurity elements substituted for spaced elements. Embodiments of the present invention may be provided as electromagnetic wave filters, polarizers, resonators, sources, mirrors, beam directors and antennas for use at wavelengths in the range from about 0.2 to 200 microns or longer. Additionally, photonic crystal devices may be provided with one or more electromagnetic waveguides adjacent to a photonic crystal for forming integrated electromagnetic circuits for use at optical, infrared, or millimeter-wave frequencies.

Abstract: A process for oxidizing iron ions contained within iron-doped lithium niobate. The process comprises the steps of protonating the iron-doped lithium niobate crystal and then placing the same into a pressure chamber where between 10-100 atmospheres of dry, ultra-pure pressurized oxygen are applied. While under pressure, the crystal is heated to approximately 950.degree. C. at a rate not to exceed 50.degree. C. per minute, and preferably at a rate not less than 25.degree. C. per minute. The crystals are then continuously heated at approximately 950.degree. C. for approximately 50 hours and then cooled to 30.degree. C. at a rate not to exceed 50.degree. C. per minute, and preferably at a rate not less than approximately 25.degree. C. per minute. The resulting lithium niobate crystal will thereafter contain iron ions wherein the divalent iron ion ration to the trivalent iron ion ratio is approximately 1:100.

Abstract: An apparatus for and a method of determining the epitaxial layer thickness and transition width in epitaxial single crystal silicon wafers are provided. The apparatus provides an epitaxial single crystal silicon wafer comprising an isotopically enriched doped substrate. The method involves a process of applying Second Ion Mass Spectrometry (SIMS) to the isotopically enriched doped wafer for determining its epitaxial layer thickness and transition width.

Abstract: Single crystal aluminum is deposited on SiGe structures to form metal interconnects. Generally, a method of forming single crystal aluminum on Si.sub.(1-X) Ge.sub.X is presented, including the steps of maintaining the substrate at certain temperature (e.g. between 300.degree. C. and 400.degree. C.) and pressure conditions (e.g. below 2.times.10.sup.-9 millibar) while aluminum atoms are deposited by a vacuum evaporation technique. This is apparently the first method of depositing single crystal aluminum on SiGe surfaces. Novel structures are made possible by the invention, including epitaxial layers 34 formed on single crystal aluminum 32 which has been deposited on SiGe 30. Among the advantages made possible by the methods presented are thermal stability and resistance to electromigration.

Abstract: A method of growing a rare earth silicate single crystal from a melt of a starting material containing a rare earth oxide and a silicon oxide, wherein the starting material in which a density of Fe as an impurity is not more 0.1 ppm, a density of Al as an impurity is not more than 0.4 ppm, or the starting material showing a weight loss of not more than 1.0% when heated up to 1,000.degree. C. is used.This method which makes it possible to stably obtain a rare earth silicate single crystal having a good scintillator performance, such as free of voids and/or non-colored crystals, or may cause no poor fluorescent characteristics due to a compositional deviation of materials.

Abstract: Contamination of aluminum-containing compound semiconductors is greatly reduced by an improved method for manufacturing the semiconductors, wherein the growing semiconductor crystal is doped with a predetermined concentration of selenium. The method of the present invention can be used to reduce contaminants in both p-type and n-type semiconductors.

Abstract: A novel method is proposed for the preparation of a superlattice multilayered film, which has a multilayered structure alternately consisting of epitaxially grown layers of a metal and layers of a metal oxide formed on the surface of a substrate and is useful as high-speed electronic devices, soft X-ray reflectors, neutron beam polarizers and the like. According to the discovery leading to this invention, good epitaxial growth of the layers can be accomplished when the metal has a face-centered cubic lattice structure and the metal oxide has a sodium chloride-type cubic lattice structure and the difference in the lattice constant between the metal and the metal oxide is small enough as in the combinations of silver and nickel oxide or magnesium oxide and nickel and nickel oxide.

Abstract: An electrode forming method for a surface acoustic wave device is adapted to form a film of an electrode material on a piezoelectric substrate to be crystallographically oriented in a constant direction while carrying out ion assistance at prescribed ion energy, in a film formation process employing a film forming method such as evaporation, sputtering, IBS (ion beam sputtering), CVD (chemical vapor deposition), plasma CVD, MBE (molecular beam epitaxy), ICB (ionized cluster beam) or laser ablation.

Abstract: Single crystal aluminum is deposited on SiGe structures to form metal interconnects. Generally, a method of forming single crystal aluminum on Si.sub.(1-x) Ge.sub.x is presented, including the steps of maintaining the substrate at certain temperature (e.g. between 300.degree. C. and 400.degree. C.) and pressure conditions (e.g. below 2.times.10.sup.-9 millibar) while aluminum atoms are deposited by a vacuum evaporation technique. This is apparently the first method of depositing single crystal aluminum on SiGe surfaces. Novel structures are made possible by the invention, including epitaxial layers 34 formed on single crystal aluminum 32 which has been deposited on SiGe 30. Among the advantages made possible by the methods presented are thermal stability and resistance to electromigration.

Abstract: A surface acoustic wave element has a diamond layer, a piezoelectric thin film formed on the diamond layer, and a pair of electrodes for generating a surface acoustic wave having a specific wavelength and extracting the surface acoustic wave, wherein at least one electrode is a copper electrode epitaxially grown on the surface of the diamond layer. To manufacture this surface acoustic wave element, after the diamond layer is formed on a substrate by epitaxial growth, the copper electrodes each having the predetermined shape are formed on the surface of the diamond layer by epitaxial growth. Since the copper electrodes formed on the diamond layer consist of high-quality single crystal copper, resistances to electromigration and stress migrations can be increased. As a result, there is provided an excellent surface acoustic wave element free from electrical defects caused by degradation and failure of the copper electrodes or free from degradation of the electrical characteristics.

Abstract: A method for growing an antimony-doped silicon single crystal having an oxygen concentration of 12 ppma or more is employed wherein the pressure of an atmospheric inert gas within the furnace is set at a range between 10 and 50 millibars (1000-5000 Pa), and also the reference rate of rotation of the quartz crucible is set at 5 rpm or more while pulling an antimony-doped silicon single crystal having an antimony concentration of 6.times.10.sup.18 atom/cc or more from an antimony-doped silicon melt contained in a quartz crucible according to the Czochralski process. The reference rate of rotation can be increased in accordance with the increasing length of the pulled single crystal, and further a pulse-like change in rotation rate can be superimposed over the reference rate of rotation, so that the pulled single crystal can have a high and axially and radially uniform oxygen concentration throughout the entire length of the single crystal.

Abstract: A method of making pure fibers from a parent material utilizing laser energy. A short wavelength laser is used to achieve a diffraction limited focal spot diameter that is smaller than the diameter of the growing fiber. Focused laser beam convergence is used to obtain a fiber growth rate that depends on the fiber tip portion such that the fiber growth rate achieves a value equal to the controlled fiber pulling rate. The present invention achieves vapor-liquid-solid growth of single crystal silicon fibers and whiskers from silane gas and permits the use of other materials in the production of fibers by the vapor-liquid-solid process. The method provides an increase in the allowable ambient pressure and growth temperature and a large and more energy efficient growth velocity as compared to carbon dioxide based laser beam technology.

Abstract: A process for forming a gold thin film comprises subjecting a gold complex to a decomposition treatment to transfer the gold in a solution to a supersaturated state, and forming a crystalline gold thin film composed of a group of monocrystals on the surface of a substrate.