Abstract: An inspection robot comprises a control cabinet, an actuator, and a base. The control cabinet and the actuator are oppositely arranged on the base in a direction parallel to a plane where the base is located. The control cabinet is configured to control a path of movement of the actuator. The actuator and the control cabinet are both installed on the same panel of the base, so that the load is more uniformly distributed on the base. Also provided is an inspection method.

Abstract: A motion control system of spraying machine based on FPGA, includes a motion controller. The motion controller includes an information analysis module, a speed control module and an interpolation module. The information analysis module is used for decoding the motion information to obtain the action information of the lance in a three-dimensional direction, and the rotation information of the clamp and the lance. The speed control module is used for driving the lance to a target position through the first motors according to the action information, and changing the speed of the interpolation movement of the lance in the three-dimensional direction into a trapezoid acceleration and deceleration. The interpolation module includes a first interpolation unit, a second interpolation unit and a control unit. The motion control system has high processing accuracy, fast reaction speed and good real-time performance.

Abstract: A substrate processing technology including: transferring a substrate to a process chamber and mounting the substrate on a substrate holder; heating the substrate with a heating device to perform predetermined substrate processing; determining the number of times of the predetermined substrate processing that has been performed that the predetermined substrate processing has been performed a preset number of times or more, determining whether it is necessary to adjust a mounting position at which the substrate is mounted on the substrate holder; and when it is determined that a mounting position adjustment is necessary, determining the mounting position by comparing the substrate temperature measured at the performing the predetermined substrate processing with a premeasured temperature of the substrate which corresponds to the mounting position and is stored in a memory.

Abstract: There is provided a configuration that includes: an intake damper and an intake fan configured to communicate with an intake port that sucks air to a transfer chamber connected to a process chamber; a valve of an inert gas introduction pipe configured to supply an inert gas to the transfer chamber; an exhaust fan and a first exhaust valve installed in the transfer chamber; a switch configured to select one of an atmospheric mode in which an atmosphere of the transfer chamber is an air atmosphere and a purge mode in which the atmosphere of the transfer chamber is an inert gas atmosphere; and a controller configured to control each of the intake damper, the intake fan, the valve of the inert gas introduction pipe, the exhaust fan, and the first exhaust valve to execute one of the atmospheric mode and the purge mode.

Abstract: Provided is a semiconductor device manufacturing method which has: a step wherein a processing substrate to be processed is placed on a substrate mounting member that is provided in a processing chamber having a plurality of gas supply regions; a film-forming step wherein a processing gas is supplied to the processing chamber, and the substrate is processed; a step wherein the substrate is carried out from the processing chamber; and a cleaning step wherein the density of the cleaning gas is controlled, while controlling cleaning gas quantities in the gas supply regions, respectively, in a state wherein the substrate is not placed in the processing chamber.

Abstract: A film formation apparatus includes a gas supply mechanism for supplying an aminosilane-based gas, and a silane-based gas that does not include an amino group. Processes of forming a seed layer on a surface of the insulation film having the opening reaching the conductive substance and on a bottom surface of the opening by supplying the aminosilane-based gas into the process chamber, and forming a silicon film on the seed layer by supplying the silane-based gas that does not include the amino group into the process chamber, are sequentially performed in the process chamber.

Abstract: A painting system according to the embodiments includes a painting booth surrounded by a ceiling and a sidewall, a conveyor line that is arranged in the painting booth and conveys an object to be painted, and a painting robot that performs painting on the object. The painting robot includes a base portion fixed on the sidewall side in the painting booth, and an arm portion that is connected to the base portion and has a seven-axis configuration.

Abstract: A device for dispensing adhesive on a substrate comprises a writing head with a first dispensing nozzle and at least one second dispensing nozzle. The device can be operated in two operating modes and is configured to perform the following steps for the change from the one operating mode to the other operating mode: lifting of the writing head, retracting or extending a pin, and lowering of the writing head to a predetermined working altitude, wherein the tips of the dispensing nozzles reach a substantially similar altitude above the substrate in the retracted state of the pin, and wherein the tip of the at least one second dispensing nozzle reaches a higher altitude above the substrate than the tip of the first dispensing nozzle in the extended state of the pin.

Abstract: Embodiments include methods of depositing and controlling the deposition of a film in multiple stages. The disclosed deposition and deposition control methods include the optical monitoring of a deposition matrix to determine a time when at least one transition point occurs. In certain embodiments, the transition point or transition points are a stoichiometry point. Methods may also include controlling the length of time in which material is deposited during a deposition stage or controlling the amount of the first, second or subsequent materials deposited during any deposition stage in response to a determination of the time when a selected transition point occurs.

Abstract: A substrate processing method which is capable of enhancing productivity in manufacturing product substrates. In process chambers of an etching apparatus, etching is carried out on a substrate as an object to be processed, and dummy processing is carried out on at least one non-product substrate before execution of the etching. A host computer determines whether or not the dummy processing is to be executed. The host computer determines whether or not the interior of each of the process chambers and is in a stable state, and omits the execution of the dummy processing when it is determined that it is in the stable state.

Abstract: A vacuum chamber is evacuated through a first evacuation passage provided with a first valve and a second evacuation passage provided with a second valve. An opening degree of the first valve is adjusted so that a pressure in the vacuum chamber becomes substantially equal to a process pressure P; an opening degree of a butterfly valve further provided in the second evacuation passage is adjusted to substantially equal to a set value determined by a table in order to set flow rates of gases to be evacuated through the first evacuation passage and the second evacuation passage to be substantially equal to corresponding set values determined by the recipe; and an opening degree of the second valve is adjusted so that a measurement value of a differential pressure gauge further provided in the second evacuation passage becomes substantially equal to a differential pressure written in the table.

Abstract: Methods for depositing low resistivity tungsten in features of substrates in semiconductor processing are disclosed herein. Methods involve using a germanium-containing reducing agent during tungsten nucleation layer deposition to achieve thin, low resistivity nucleation layers.

Abstract: Exemplary painting devices for painting components, e.g., motor vehicle bodies or parts thereof, and associated exemplary methods are disclosed. An exemplary painting device may include a multi-axis painting robot positioning an atomizer, a robot controller for controlling the painting robot, and a controls enclosure comprising the robot controller. An exemplary controls enclosure may be a load-bearing column that mechanically supports the painting robot.

Abstract: A substrate is first rotated at a first rotation speed, and a resist solution is applied. Rotation of the substrate is decelerated to a second rotation speed lower than the first rotation speed so that the substrate is rotated at the low speed to smooth the resist solution on the substrate. Rotation of the substrate is then accelerated to a third rotation speed higher than the second rotation speed, and a solvent for the coating solution and/or a dry gas are/is supplied to the resist solution on the substrate. The solvent gas is supplied to a portion of the resist solution on the substrate thicker than a set thickness, and the dry gas is supplied to a portion of the coating solution on the substrate thinner than the set thickness. This thins the thicker portion of the resist solution and thickens the thinner portion to uniform the resist solution.

Abstract: A droplet discharge device is configured to control the drive corresponding to a prescribed set of the nozzles selected to discharge droplets during a main scan when the droplets are arranged in the first partition regions, based on a pre-measured distribution of a droplet discharge amount of each of the prescribed set of the nozzles so that the droplet discharge amount approximates a predetermined optimal amount, and to control the drive waveforms corresponding to the nozzles included in a plurality of potential combinations of the nozzles selected to discharge droplets during a main scan when the droplets are arranged in the second partition regions, based on a pre-measured distribution of an average droplet discharge amount calculated from an amount of droplets discharged from the each of the nozzles in all the potential combinations so that the droplet discharge amount approximates the predetermined optimal amount.

Abstract: A film forming apparatus includes a processing chamber, and a mounting table disposed in the processing chamber to mount a substrate thereon. The film forming apparatus further includes a gas shower head having gas supply holes and including a central region facing a central portion of the substrate and a peripheral region facing a peripheral portion of the substrate, a first processing gas supply unit for supplying a first processing gas to the central region, a second processing gas supply unit for supplying a second processing gas to the central region, an energy supply unit for supplying energy to react the first processing gas with the second processing gas on the substrate, and a purge gas supply unit for supplying a purge gas to the central region and the peripheral region when one of the first and the second processing gas is switched by the other.

Abstract: A resist coating apparatus supplies a resist solution to substantially the center of a target substrate to be processed while rotating the target substrate at a first rotational speed, then decelerates the rotation of the substrate to a second rotational speed lower than the first rotational speed, or until rotational halt, makes the deceleration smaller in the deceleration step as the rotational speed becomes closer to the second rotational speed or the rotational halt, and accelerates the rotation of the substrate to a third rotational speed higher than the second rotational speed to spin off a residue of the resist solution.

Abstract: Developed is high-efficiency synthesis method and apparatus capable of promoting the initial growth of carbon nanostructure by eliminating the initial fluctuation time and rising time in raw gas flow quantity.-A high-efficiency synthesis method of carbon nanostructure according to the present invention is a high-efficiency synthesis method of carbon nanostructure, the method comprising: bringing raw material gas and a catalyst into contact with each other under reactive conditions so as to produce a carbon nanostructure, wherein: the initiation of contact of the raw material gas with the catalyst is carried out instantaneously. Reaction conditions such as temperature and raw material gas concentration are set so as to meet those for catalyst growth, and under the reaction conditions, the initiation of contact of raw material gas G with catalyst 6 is carried out instantaneously.

Abstract: A three dimensional object may be formed by forming voxels on a sheet of material and positioning the voxels together to form the three dimensional object by rolling up the sheet.

Abstract: A method of forming a boron nitride or boron carbon nitride dielectric produces a conformal layer without loading effect. The dielectric layer is formed by chemical vapor deposition (CVD) of a boron-containing film on a substrate, at least a portion of the deposition being conducted without plasma, and then exposing the deposited boron-containing film to a plasma. The CVD component dominates the deposition process, producing a conformal film without loading effect. The dielectric is ashable, and can be removed with a hydrogen plasma without impacting surrounding materials. The dielectric has a much lower wet etch rate compared to other front end spacer or hard mask materials such as silicon oxide or silicon nitride, and has a relatively low dielectric constant, much lower then silicon nitride.

Abstract: An additive three-dimensional fabrication process uses multiple build materials with different optical properties (e.g., color, opacity) at different surface depths to achieve grayscale-rendered images on exterior surfaces thereof.

Abstract: A coating/developing device includes a processing block having a plurality of coating unit blocks stacked and a developing unit block stacked on the coating unit blocks. Each of the unit blocks is provided with a liquid processing unit for coating a liquid chemical on a substrate, a heating unit for heating the substrate, a cooling unit for cooling the substrate and a transfer unit for transferring the substrate between the units. The liquid processing unit is provided with a coating unit for coating a resist liquid on the substrate, a first bottom antireflection coating (BARC) forming unit for coating a liquid chemical for a BARC on the substrate before the resist liquid is coated thereon, and a second BARC forming unit for coating a liquid chemical for the BARC on the substrate after the resist liquid is coated thereon.

Abstract: Fluorine gas generators are connected with semiconductor manufacturing apparatuses through a gas supplying system including a storage tank that can store a predetermined quantity of fluorine gas generated in the on-site fluorine gas generators. When one or more of the on-site fluorine gas generators are stopped, fluorine gas is supplied to the semiconductor manufacturing apparatuses from the storage tank storing a predetermined quantity of fluorine gas, so as to keep the operations of the semiconductor manufacturing apparatuses. Thereby obtained is a semiconductor manufacturing plant in which fluorine gas generated in the fluorine gas generators can be safely and stably supplied to the semiconductor manufacturing apparatuses, and with superior cost performance.

Abstract: A transfer flow is produced in accordance with a process recipe of a process to be carried out. In the transfer flow, a type of modules listed in accordance with a substrate transfer order is associated with a necessary staying time from when the substrate is transferred into a module by a substrate transfer unit to when the substrate is ready to be transferred back to the substrate transfer unit after the corresponding process is finished. A cycle limiting time is determined to be the longest necessary transfer cycle time among those obtained by dividing the necessary staying time by the number of the modules mounted in the coater/developer. The number of the modules to be used is determined to be a value obtained by dividing the necessary staying time by the cycle limiting time or a nearest integer to which the value is raised.

Abstract: A processing apparatus includes a process container having a placing table for placing a processing object, an exhaust system having vacuum pumps and a pressure control valve for exhausting atmosphere in the process container. A gas injection unit having a gas ejection hole is provided in the process container, as well as a gas supplying unit for supplying a process gas to the gas injection unit. The entire process apparatus is controlled by a controlling unit. The control unit controls the exhaust system and the gas supplying unit. When starting a predetermined process, the process gas at a flow rate greater than a prescribed flow rate is supplied for a short time while exhausting the atmosphere in the process container by the exhaust system, and then the process gas at a prescribed flow rate is supplied.

Abstract: A single-wafer, chemical vapor deposition reactor is provided with hydrogen and silicon source gas suitable for epitaxial silicon deposition, as well as a safe mixture of oxygen in a non-reactive gas. Methods are provided for forming oxide and silicon layers within the same chamber. In particular, a sacrificial oxidation is performed, followed by a hydrogen bake to sublime the oxide and leave a clean substrate. Epitaxial deposition can follow in situ. A protective oxide can also be formed over the epitaxial layer within the same chamber, preventing contamination of the critical epitaxial layer. Alternatively, the oxide layer can serve as the gate dielectric, and a polysilicon gate layer can be formed in situ over the oxide.

Abstract: System and method for operating a material deposition system are disclosed. In one embodiment, the method can include periodically injecting a precursor into a vaporizer through an injector at the vaporizer, vaporizing the precursor in the vaporizer and supplying the vaporized precursor to a reaction chamber in fluid communication with the vaporizer, and shutting down the vaporizer and the reaction chamber after a period of time. The method can also include conducting maintenance of the injector at the vaporizer by using a vapor solvent rinse.

Abstract: Disclosed are an alignment film printing method of LCD panel and device thereof. The method comprises: acquiring position information of one or more defect substrate units of a substrate; delivering the position information to a process management system; delivering the position information to a first alignment film printing apparatus by the process management system; and excluding the alignment film printing operation to the defect substrate units performed by the first alignment film printing apparatus. The benefits of the present invention is to control the back-end processes for excluding steps of the printing operations, the detection and etc to the defect substrate units, accordingly, material cost of alignment film printing can be saved.

Abstract: Disclosed is a substrate processing apparatus, including: a processing space to provide a space in which a substrate is to be processed; a heating member to heat the processing space; a gas supply member to supply at least first and second processing gases to the processing space; an exhaust member to exhaust an atmosphere in the processing space; and a control member to control at least the gas supply member and the exhaust member such that supply and exhaust of the first and second processing gases are alternately repeated a plurality of times so that the first and second processing gases are not mixed with each other in the processing space when forming a desired film on the substrate, and both the first and second processing gases are supplied to the processing space when coating a surface of an inner wall of the processing space with a desired film.

Abstract: In the present invention, a substrate is first rotated at a first rotation speed, and a resist solution is applied to the rotated substrate. Subsequently, the rotation of the substrate is decelerated to a second rotation speed lower than the first rotation speed so that the substrate is rotated at the low speed to smooth the resist solution on the substrate. The rotation of the substrate is then accelerated to a third rotation speed higher than the second rotation speed, and a solvent for the coating solution and/or a dry gas are/is supplied to the resist solution on the substrate. In this event, the solvent gas is supplied to a portion of the resist solution on the substrate thicker than a set thickness, and the dry gas is supplied to a portion of the coating solution on the substrate thinner than the set thickness. This thins the thicker portion of the resist solution and thickens the thinner portion to uniform the resist solution.

Abstract: An apparatus and method of fabricating a color filter using an ink-jet technique includes inclining an ink-jet head having a plurality of nozzles at a predetermined angle, moving the ink-jet head in a lengthwise direction of the color filter that is divided into a plurality of working regions, ejecting color ink into a plurality of pixels, moving the ink-jet head to the other adjacent working region after a work in a predetermined working region is completed, and ejecting color ink, wherein the ink-jet head is symmetrically arranged with its mirror-image in adjacent working regions and thereby ejecting the color ink.

Abstract: A manufacturing method for a semiconductor device, comprising: performing first processing on a plurality of wafers in a first processing order in a first processing apparatus; obtaining a processed amount with respect to each of the plurality of wafers in the first processing; obtaining a processed amount with respect to each of the plurality of wafers by second processing in a second processing apparatus after the first processing; deciding a second processing order, which is different from the first processing order, from the processed amount with respect to each of the plurality of wafers by the first processing and the processed amount with respect to each of the plurality of wafers by the second processing; and performing the second processing on the plurality of wafers in the second processing order in the second processing apparatus.

Abstract: Control method and apparatus for a manual spray gun includes display that is disposed on the spray gun and that provides information to an operator about one or more coating operation parameters. An auxiliary trigger may be used that enables an operator to make selections or changes of one or more coating operation parameters. The display and auxiliary trigger together permit an operator to make selections or changes without having to divert attention or field of view away from the spray gun or the coating area, especially during a coating operation. The display may include numeric information, for example, data relating to a coating function being displayed.

Abstract: A transfer flow is produced in accordance with a process recipe of a process to be carried out. In the transfer flow, a type of modules listed in accordance with a substrate transfer order is associated with a necessary staying time from when the substrate is transferred into a module by a substrate transfer unit to when the substrate is ready to be transferred back to the substrate transfer unit after the corresponding process is finished. A cycle limiting time is determined to be the longest necessary transfer cycle time among those obtained by dividing the necessary staying time by the number of the modules mounted in the coater/developer. The number of the modules to be used is determined to be a value obtained by dividing the necessary staying time by the cycle limiting time or a nearest integer to which the value is raised.

Abstract: This is directed to a liquid vaporization process for depositing an oleophobic ingredient on a surface of an electronic device component using a PVD process. A raw liquid material that includes the oleophobic ingredient can be placed in a liquid supply system coupled to a vacuum chamber. The liquid supply system can be pressured by an inert gas to prevent undesired chemical reactions between the oleophobic ingredient and air. The liquid, including the oleophobic ingredient, can vaporize upon reaching the vaporizing unit, and the oleophobic ingredient can be deposited on the component.

Abstract: A powder spray coating facility is automatically switched between a first operating mode in which only recovery powder is moved into an intermediate receptacle, and a second operating mode in which only fresh powder from a fresh powder unit is fed to the intermediate receptacle. Switching may be carried out from the second operating mode to a reserve powder operating mode when, following switching from the first operating mode to the second operating mode, an intermediate receptacle sensor continues to transmit a “powder needed” signal.

Abstract: Disclosed is a plasma CVD device. In the plasma CVD device, in producing a silicon nitride film while controlling the size of a band gap by CVD, microwaves are introduced into a treatment vessel by a flat antenna having a plurality of holes. The plasma CVD is carried out under a given treatment pressure selected from a pressure range of not less than 0.1 Pa and not more than 1333 Pa at a flow ratio between a silicon-containing compound gas and a nitrogen gas (silicon-containing compound gas flow rate/nitrogen gas flow rate) selected from a range of not less than 0.005 and not more than 0.2, whereby the Si/N ratio in the film is controlled to form a silicon nitride film having a band gap size of not less than 2.5 eV and not more than 7 eV.

Abstract: Methods, computer programs, and apparatus for applying a layer of cushion gum to a tire casing in preparation for the retreading of the tire casing, the steps of the methods including selecting one of a plurality recipes for applying cushion gum based on one of a size, model and shape of the tire casing; pressurizing the tire casing to a predetermined pressure based on the recipe; crushing the tire casing by an extruder head a predetermined percentage of the tire casing radius or a predetermined distance, the predetermined percentage based on the recipe; and extruding the cushion gum from the extruder head. The extruder head may be translatable by way of a screw drive.

Abstract: The present invention provides a plasma treatment apparatus and a conditioning method capable of performing a conditioning for the whole vacuum chamber. A plasma treatment apparatus according to an embodiment of the present invention is provided with a moving means for moving a substrate holder (2) between a reaction chamber (8) and a transfer chamber (9) lying on the under side thereof. Moreover, it has such structure that the exhaust conductance of the reaction chamber (8) becomes large when the substrate holder (2) lies in the transfer chamber. Upon the conditioning, the substrate holder (2) is moved to the transfer chamber (9) to allow diffusing species to spread widely, thereby effectively performing the conditioning for both reaction chamber (8) and transfer chamber (9) in the vacuum chamber (1).

Abstract: A droplet ejecting apparatus includes a stage which holds a substrate; R (red), G (green), and B (blue) head groups for ejecting droplets of the R, G, and B colors, respectively, each of the head groups including at least one head; and a carriage which holds the R, G, and B head groups. In the apparatus, droplets of the R, G, and B colors are ejected to R, G, and B colored portions on the substrate from the R, G, and B head groups, respectively, during movement of the carriage relative to the stage in a first direction.

Abstract: A method is provided which includes dispensing a deposition solution at a plurality of locations extending different distances from a center of a microelectronic topography each at different moments in time during an electroless plating process. An electroless plating apparatus used for the method includes a substrate holder, a moveable dispense arm, and a storage medium comprising program instructions executable by a processor for positioning the moveable dispense arm. Another method and accompanying electroless deposition chamber are configured to introduce a gas into an electroless plating chamber above a plate which is suspended above a microelectronic topography and distribute the gas to regions extending above one or more discrete portions of the microelectronic topography.

Abstract: A processing system for performing atomic layer deposition (ALD) including a process chamber, a substrate holder provided within the process chamber, and a gas injection system configured to supply a first process gas and a second process gas to the process chamber. The gas injection system is configured to introduce the first process gas and the second process gas to the processing chamber at a first location and a second location, wherein at least one of the first process gas and the second process gas is alternatingly and sequentially introduced between the first location and the second location.

Abstract: A functional droplet coating apparatus includes a functional droplet discharge head for discharging a functional droplet, a stage for setting thereon a board to be coated with the functional droplet discharged from the functional droplet discharge head, and a drying unit for covering one or entire part of the board set on the stage, the drying unit for drying the functional droplet ejected from the functional droplet discharge head.

Abstract: LEDs in an LED display part are arranged so as to have approximately the same placing form as containers. When a chemical solution in a container is exhausted, a corresponding LED of the LED display part lights up. Prior to an operation of replacing the container, an operator allows a bar code reader to read a bar code of an unused container. A bar code reader collator collates the bar code data of the unused container with the bar code data of a container corresponding to the lighting LED, which is already registered in a data base. When the bar code reader collator judges that the chemical solutions in the both containers are identical, the display of the LED is changed from a lighting-up display to a flashing display. This makes it easy to recognize the disposing position of the empty container to be replaced, thereby effectively preventing incorrect replacement of the container.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a process chamber, a gas supply system, a gas discharge system, an RF (radio frequency) unit, an electrode, and a control device. The control device controls the gas supply system, the gas discharge system, and the RF unit. While the control device controls the RF unit to apply predetermined RF power to the electrode for generating plasma, the control device controls the gas supply system to supply a process gas to the process chamber alternately at a first flowrate and at a second flowrate greater than the first flowrate.

Abstract: Apparatuses and processes for maskless deposition of electronic and biological materials. The process is capable of direct deposition of features with linewidths varying from the micron range up to a fraction of a millimeter, and may be used to deposit features on substrates with damage thresholds near 100° C. Deposition and subsequent processing may be carried out under ambient conditions, eliminating the need for a vacuum atmosphere. The process may also be performed in an inert gas environment. Deposition of and subsequent laser post processing produces linewidths as low as 1 micron, with sub-micron edge definition. The apparatus nozzle has a large working distance—the orifice to substrate distance may be several millimeters—and direct write onto non-planar surfaces is possible.

Abstract: A transfer flow is produced in accordance with a process recipe of a process to be carried out. In the transfer flow, a type of modules listed in accordance with a substrate transfer order is associated with a necessary staying time from when the substrate is transferred into a module by a substrate transfer unit to when the substrate is ready to be transferred back to the substrate transfer unit after the corresponding process is finished. A cycle limiting time is determined to be the longest necessary transfer cycle time among those obtained by dividing the necessary staying time by the number of the modules mounted in the coater/developer. The number of the modules to be used is determined to be a value obtained by dividing the necessary staying time by the cycle limiting time or a nearest integer to which the value is raised.

Abstract: To automatically purge a transfer chamber by means of inert gas. There is provided a substrate processing apparatus including a controller that performs control so that a transfer chamber 102 connected to a processing chamber 202 for processing a substrate is purged by gas, the controller having a switching unit that switches a function of exhausting the gas in the transfer chamber 102 in a set direction, and a function of circulating the gas through the transfer chamber in an inert gas atmosphere.

Abstract: A plasma processing apparatus includes a first radio frequency (RF) power supply unit for applying a first RF power for generating a plasma from a processing gas to at least one of a first and a second electrode which are disposed facing each other in an evacuable processing chamber. The first RF power supply unit is controlled by a control unit so that a first phase at which the first RF power has a first amplitude for generating a plasma and a second phase at which the first RF power has a second amplitude for generating substantially no plasma are alternately repeated at predetermined intervals.

Abstract: In the present invention, a plurality of solvent supply nozzles for solvents having different solubility parameters are provided in a coating treatment apparatus. For a solvent supply nozzle for use at the time of edge rinse, a solvent supply nozzle is selected that discharges a removal solvent having a solubility parameter different by a set value or more from that of a coating solvent contained in a coating solution. During coating treatment, the coating solution is discharged from a coating solution supply nozzle onto the central portion of a rotated substrate to form a solution film having a predetermined film thickness. Immediately after the formation, edge rinse is started with the coating solution on the substrate not dry yet, in which the removal solvent is supplied to the peripheral portion of the substrate from the selected solvent supply nozzle.