Abstract: System and methods of improving dynamic pressure response during recipe step transitions. An exemplary method may include changing at least one of a plurality of recipe parameters in accordance with a processing recipe while running the processing recipe on a semiconductor substrate in a processing chamber. The method may further include measuring a pressure response in the processing chamber responsive to the changing of the at least one of the plurality of recipe parameters, and determining a response error based on the pressure response and a model pressure response calculated based on the processing recipe. The method may further include, in response to determining that the response error may be greater than a threshold value, calculating an adjustment to an operation of a valve downstream of the processing chamber when changing the at least one of the plurality of recipe parameters in accordance with the processing recipe in subsequent runs.

Abstract: An ion source having an electrically isolated extraction plate is disclosed. By isolating the extraction plate, a different voltage can be applied to the extraction plate than to the body of the arc chamber. By applying a more positive voltage to the extraction plate, more efficient ion source operation with higher plasma density can be achieved. In this mode the plasma potential is increased, and the electrostatic sheath reduces losses of electrons to the chamber walls. By applying a more negative voltage, an ion rich sheath adjacent to the extraction aperture can be created. In this mode, conditioning and cleaning of the extraction plate is achieved via ion bombardment. Further, in certain embodiments, the voltage applied to the extraction plate can be pulsed to allow ion extraction and cleaning to occur simultaneously.

Abstract: A processing method according to one aspect of the present disclosure includes varying pressure of a processing chamber in a state in which a plasma of a purge gas is formed in the processing chamber, the varying including removing a film deposited in the processing chamber, with the formed plasma.

Abstract: A plasma processing apparatus for processing a substrate using a plasma, comprising: a process chamber in which the processing takes place; a plasma source for providing a plasma to the process chamber; a substrate mount within the process chamber for holding the substrate, the substrate mount comprising a surface having a plurality of apertures.

Abstract: The present invention improves the in-plane uniformity of films formed via a plasma treatment.

Abstract: An embodiment of a heating system includes a cavity configured to contain a load, a thermal heating system (e.g., a convection, radiant, and/or gas heating system) in fluid communication with the cavity and configured to heat air, and an RF heating system. The RF heating system includes an RF signal source configured to generate an RF signal, first and second electrodes positioned across the cavity and capacitively coupled, a transmission path electrically coupled between the RF signal source and one or more of the first and second electrodes, and a variable impedance matching network electrically coupled along the transmission path between the RF signal source and the one or more electrodes. At least one of the first and second electrodes receives the RF signal and converts the RF signal into electromagnetic energy that is radiated into the cavity.

Abstract: In an embodiment, a susceptor ring assembly for use in a semiconductor processing tool includes: an upper ring plate having an aperture formed therethrough, the upper ring plate including: a first upper ring wall extending from the upper ring plate along the aperture; a second upper ring wall extending from the upper ring plate and concentric with the first upper ring wall; a bridge extending between the first upper ring wall and the second upper ring wall; a lower ring configured to interlock with the upper ring plate, the lower ring including: a lower ring wall concentric with the first upper ring wall, wherein the lower ring wall is configured to abut the first upper ring wall; and a lower plate parallel with the bridge and extending from the lower ring wall.

Abstract: An apparatus for treating a substrate comprises a chamber having a treatment space for treating the substrate; a supporting unit which supports the substrate, inside the treatment space; a gas supplying unit which supplies process gas into the treatment space; and a plasma source which generates plasma based on the process gas inside the treatment space. The supporting unit comprises a supporting plate on which the substrate is placed; a focus ring which is disposed to surround the substrate supported by the supporting plate; a temperature control unit which adjusts a temperature of the focus ring. The temperature control unit may include a first heater which is disposed to heat the focus ring under the focus ring and to be opposite to the focus ring; and a cooling member which is provided under the first heater.

Abstract: A substrate processing apparatus having improved uniformity and speed of reaction is provided. A substrate processing apparatus includes a body portion comprising a discharge path, a gas supply unit connected to the body portion, a first partition extending from the body portion, a second partition extending from the body portion and arranged between the gas supply unit and the first partition, and a substrate support unit configured to have surface-sealing with the first partition, wherein a first region between the first partition and the second partition and a second region between the gas supply unit and the second partition are connected to the discharge path.

Abstract: A workpiece processing apparatus allowing independent control of the voltage applied to the shield ring and the workpiece is disclosed. The workpiece processing apparatus includes a platen. The platen includes a dielectric material on which a workpiece is disposed. A bias electrode is disposed beneath the dielectric material. A shield ring, which is constructed from a metal, ceramic, semiconductor or dielectric material, is arranged around the perimeter of the workpiece. A ring electrode is disposed beneath the shield ring. The ring electrode and the bias electrode may be separately powered. This allows the surface voltage of the shield ring to match that of the workpiece, which causes the plasma sheath to be flat. Additionally, the voltage applied to the shield ring may be made different from that of the workpiece to compensate for mismatches in geometries. This improves uniformity of incident angles along the outer edge of the workpiece.

Abstract: Systems, methods, and computer programs are presented for controlling the temperature of a window in a semiconductor manufacturing chamber. One apparatus includes a heater for receiving and heating a flow of air and an air amplifier coupled to pressurized gas. The air amplifier has an input that receives the flow of air from the heater, and the air amplifier having an output. A duct is coupled to the output of the air amplifier and a plenum is coupled to the duct. The plenum receives the flow of air and distributes the flow of air over a window of a plasma chamber. A temperature sensor is situated about the window of the plasma chamber and a controller is provided to control the air amplifier and the heater based on a temperature measured by the temperature sensor.

Abstract: A system that utilizes a component that controls thermal gradients and the flow of thermal energy by variation in density is disclosed. Methods of fabricating the component are also disclosed. The component is manufactured using additive manufacturing. In this way, the density of different regions of the component can be customized as desired. For example, a lattice pattern may be created in the interior of a region of the component to reduce the amount of material used. This reduces weight and also decreases the thermal conduction of that region. By using low density regions and high density regions, the flow of thermal energy can be controlled to accommodate the design constraints.

Abstract: A cover plate, a plasma treatment system, and a plasma treatment method therewith are disclosed. The plasma treatment system may include a window, an antenna electrode disposed on the window, and a cover plate disposed between the antenna electrode and the window to cover top and side surfaces of the window.

Abstract: A plasma processing device is provided. The plasma processing device includes a plate formed between a window covering a top portion of a chamber where plasma processing is performed and an antenna generating a magnetic field, and a fluid supply unit supplying a fluid for controlling temperatures of the window and the antenna, wherein the plate includes first and second regions supplied with the fluid, and the fluid supply unit independently controls the first and second regions.

Abstract: An ion source with improved temperature control is disclosed. A portion of the ion source is nestled within a recessed cavity in a heat sink, where the portion of the ion source and the recessed cavity are each shaped so that expansion of the ion source causes high pressure thermal contact with the heat sink. For example, the ion source may have a tapered cylindrical end, which fits within a recessed cavity in the heat sink. Thermal expansion of the ion source causes the tapered cylindrical end to press against the recessed cavity in the heat sink. By proper selection of the temperature of the heat sink, the temperature and flow of coolant fluid through the heat sink, and the size of the gap between the heat sink and the ion source, the temperature of the ion source can be controlled.

Abstract: A component coupling system for controllable heat transfer from or to a component which is heated by an external and/or internal heat source and is disposed adjacent to a cooler. The component coupling system includes a carrier plate, on which least one first means for spacing is disposed such that a component disposed on the means for spacing and the carrier plate, together with the means for spacing, form a first cavity. If needed, this cavity can be evacuated, filled with a fluid medium, or have a fluid medium flow through it, whereby the heat transfer or the heat dissipation from the component can be controlled in a simple manner.

Abstract: A mutually induced filter for filtering radio frequency (RF) power from signals supplied to a load is described. The mutually induced filter includes a first portion connected to a first load element of the load for filtering RF power from one of the signals supplied to the first load element. The load is associated with a pedestal of a plasma chamber. The mutually induced filter further includes a second portion connected to a second load element of the load for filtering RF power from another one of the signals supplied to the second load element. The first and second portions are twisted with each other to be mutually coupled with each other to further facilitate a coupling of a resonant frequency associated with the first portion to the second portion.

Abstract: In a plasma processing apparatus, a connector section with the film-like electrode of a sintered plate of a sample stage to which high-frequency power is supplied includes a conductor section disposed inside a through hole, an upper part of which is bonded to the film-like electrode and a lower part of which is connected to an end of a power supply path of the high-frequency power, and a boss disposed between the conductor section and a substrate surrounding an outer periphery of the conductor section inside the through hole and made of an insulating material. Upper ends of a rod-like member at the center of the conductor section and a socket surrounding the rod-like member are disposed at a position higher than the boss, and an adhesive is prevented from entering between the socket and the rod-like member in the upper end of the socket.

Abstract: Systems and methods of the invention generally relate to altering the functionality of a non-transient electronic device. A container holding an agent is located proximal to a non-transient electronic device capable of performing at least one function. The agent is capable of rendering the device incapable of performing the at least one function. The container is configured to controllably release the agent to the electronic device in a variety of passive and active eventualities.

Abstract: An optimized plasma processing chamber configured to provide a current path is provided. The optimized plasma processing chamber includes at least an upper electrode, a powered lower electrode, a heating plate, a cooling plate, a plasma chamber lid, and clamp ring. Both the heating plate and the cooling plate are disposed above the upper electrode whereas the heating plate is configured to heat the upper electrode while the cooling plate is configured to cool the upper electrode. The clamp ring is configured to secure the upper electrode to a plasma chamber lid and to provide a current path from the upper electrode to the plasma chamber lid. A pocket may be formed between the clamp ring and the upper electrode to hold at least the heater plate, wherein the pocket is configured to allow longitudinal and lateral tolerances for thermal expansion of the heater plate from repetitive thermal cycling.

Abstract: An ion source with improved temperature control is disclosed. A portion of the ion source is nestled within a recessed cavity in a heat sink, where the portion of the ion source and the recessed cavity are each shaped so that expansion of the ion source causes high pressure thermal contact with the heat sink. For example, the ion source may have a tapered cylindrical end, which fits within a recessed cavity in the heat sink. Thermal expansion of the ion source causes the tapered cylindrical end to press against the recessed cavity in the heat sink. By proper selection of the temperature of the heat sink, the temperature and flow of coolant fluid through the heat sink, and the size of the gap between the heat sink and the ion source, the temperature of the ion source can be controlled.

Abstract: In one embodiment, a dual phase cleaning chamber may include a turbulent mixing chamber, a fluid diffuser, an isostatic pressure chamber and a rupture mitigating nozzle. The turbulent mixing chamber may be in fluid communication with a first fluid inlet and a second fluid inlet. The fluid diffuser may be in fluid communication with the turbulent mixing chamber. The rupture mitigating nozzle may include a first fluid collecting offset, a second fluid collecting offset, and a displacement damping projection. The displacement damping projection may be disposed between the first and second fluid collecting offset and may be offset away from each of the first fluid collecting offset and the second fluid collecting offset, and towards the fluid diffuser. A pressurized cleaning fluid introduced from the first fluid inlet, the second fluid inlet, or both flows through the outlet passage of the first and second fluid collecting offset.

Abstract: A method for etching a bevel edge of a substrate in a processing chamber is provided. The method includes flowing an inert gas into a center region of the processing chamber defined above a center region of the substrate and flowing a mixture of an inert gas and a processing gas over an edge region of the substrate. The method further includes striking a plasma in the edge region, wherein the flow of the inert gas and the flow of the mixture maintain a mass fraction of the processing gas substantially constant. A processing chamber configured to clean a bevel edge of a substrate is also provided.

Abstract: A pedestal alignment tool for adjusting an orienter pedestal of an ion implant device is provided, wherein the pedestal is configured to orient a wafer prior to implantation in the ion implant device, the pedestal alignment tool comprising supporting elements configured for contacting a surface of the pedestal, a base comprising a top surface and openings for receiving the supporting elements, and adjustment means configured for adjusting lengths of the supporting elements over which the supporting elements protrude from the top surface of the base.

Abstract: Apparatus and processes for preparing heterostructures with reduced strain are disclosed. The heterostructures may include a semiconductor structure that conforms to a surface layer having a different crystal lattice constant than the structure to form a relatively low-defect heterostructure.

Abstract: Apparatus and processes for preparing heterostructures with reduced strain are disclosed. The heterostructures may include a semiconductor structure that conforms to a surface layer having a different crystal lattice constant than the structure to form a relatively low-defect heterostructure.

Abstract: A method of fabricating a display device includes forming a thin-film transistor including a gate electrode, a source electrode and a drain electrode on a substrate, forming a first insulating layer and a second insulating layer on the thin-film transistor, forming a common electrode on the second insulating layer by depositing a common electrode material on the second insulating layer, plasma-treating a photoresist pattern on the common electrode material, and etching the common electrode material using the plasma-treated photoresist pattern as a mask, defining a contact hole in the second insulating layer which corresponds to the drain electrode using the plasma-treated photoresist pattern and the common electrode as a mask, forming a third insulating layer on the second insulating layer and the common electrode to expose the contact hole and the drain electrode and forming a pixel electrode connected to the drain electrode on the third insulating layer.

Abstract: The present disclosure provides methods and systems for bonding multiple wafers. An example system may include a sealable chamber with a first and second substantially vertical post positioned inside of the sealable chamber. The system may also include a first latch connected to the first post via a first pin, wherein the first pin allows the first latch to rotate about the first pin. The system may also include a second latch similarly configured to the first latch. The system may also include a base plate positioned between the first and second posts. The base plate is arranged such that when a first wafer rests on the base plate and a second wafer rests on the first and second latches, moving the base plate from a first position to a second position causes a top surface of the first wafer to contact a bottom surface of the second wafer.

Abstract: Systems and methods for etching a substrate include arranging a substrate including a first structure and a dummy structure in a processing chamber. The first structure is made of a material selected from a group consisting of silicon dioxide and silicon nitride. The dummy structure is made of silicon. Carrier gas is supplied to the processing chamber. Nitrogen trifluoride and molecular hydrogen gas are supplied to the processing chamber. Plasma is generated in the processing chamber. The dummy structure is etched.

Abstract: Systems and methods of the invention generally relate to altering the functionality of a non-transient electronic device. A container holding an agent is located proximal to a non-transient electronic device capable of performing at least one function. The agent is capable of rendering the device incapable of performing the at least one function. The container is configured to controllably release the agent to the electronic device in a variety of passive and active eventualities.

Abstract: Provided is an apparatus for treating a substrate which is capable of uniformly controlling a temperature of a support plate. The apparatus for treating the substrate includes a chamber having a treating space with an opened top surface, a support unit disposed within the chamber to support the substrate, a dielectric assembly disposed on the opened top surface of the chamber to cover the opened top surface, and a plasma source disposed above the dielectric assembly, the plasma source including an antenna generating plasma from a gas supplied into the chamber. The dielectric assembly includes a dielectric window, and heating units each of which is formed of a non-metallic material, the heating units being disposed on a top surface of the dielectric window to heat the dielectric window.

Abstract: A manufacturing method of a display device includes: forming a thin film transistor on a substrate, forming a pixel electrode connected to the thin film transistor, and forming a common electrode insulated from the pixel electrode. At least one of forming the pixel electrode and forming the common electrode includes: forming an electrode layer on the substrate, coating a photoresist on the electrode layer to form a first electrode sub-layer on which the photoresist is coated and a second electrode sub-layer on which the photoresist is not coated, generating etching vapor by heating an etching solution in a double boiler, and etching the second electrode sub-layer by using the etching vapor.

Abstract: Embodiments related to managing the process feed conditions for a semiconductor process module are provided. In one example, a gas channel plate for a semiconductor process module is provided. The example gas channel plate includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps. The example gas channel plate also includes a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate.

Abstract: The plasma reactor defines a reaction chamber provided with a support for the metallic pieces and an anode-cathode system, and a heating means is mounted externally to said plasma reactor. The plasma process, for a cleaning operation, includes the steps of connecting the support to the grounded anode and the cathode to a negative potential of a power source; feeding an ionizable gaseous charge into the reaction chamber and heating the latter at vaporization temperatures of piece contaminants; applying an electrical discharge to the cathode; and providing the exhaustion of the gaseous charge and contaminants. A subsequent heat treatment includes the steps of: inverting the energization polarity of the anode-cathode system; feeding a new gaseous charge to the reaction chamber and maintaining it heated; applying an electrical discharge to the cathode; and exhausting the gaseous charge from the reaction chamber.

Abstract: Systems and apparatus are disclosed for adjusting the temperature of at least a portion of the surface of a reaction chamber during a film formation process to control film properties. More than one portion of the chamber surface may be temperature-modulated.

Abstract: Embodiments of a window assembly are provided herein. In some embodiments, a window assembly for use in a substrate processing system comprising a first window at least partially transparent to light energy; a second window transparent to light energy and substantially parallel to the first window; and a separator disposed proximate the peripheral edges of the first and second windows and defining a sealed gap between the first and second windows, wherein the separator has an inlet and outlet to flow a gas through the sealed gap. In some embodiments, one or more support elements are disposed in the sealed gap to maintain a substantially uniform gap distance between the first and second windows. In some embodiments, a plurality of light adjusting elements are disposed in the gap to adjust one or more properties of light energy that passes through the light adjusting element.

Abstract: Device for treating substrates, comprising a changer having controlled pressure and temperature, a substrate support which is provided in the chamber, the chamber comprising a gas inlet for carrying out a vapor phase deposition, and an upper wall of the chamber provided with a plurality of first channels connected to a first inlet and a plurality of second channels connected to a second inlet, the first and second channels opening into the chamber and being regularly distributed in the upper wall, a heating element provided above the upper wall and a gas discharge ring provided between the upper wall and the substrate support, the upper wall begin electrically conductive and insulated relative to the substrate support so as to be able to apply a voltage between the upper wall and the substrate support.

Abstract: A depression filling method for filling a depression of a workpiece including a semiconductor substrate and an insulating film formed on the semiconductor substrate is provided. The depression penetrating the insulating film is configured so as to extend to the semiconductor substrate. The method includes: forming a thin film of a semiconductor material along a wall surface that defines the depression; annealing the workpiece to cause the semiconductor material of the thin film to move toward a bottom of the depression and to form an epitaxial region corresponding to crystals of the semiconductor substrate; and etching the thin film.

Abstract: The antenna has a structure that the high frequency electrode is received in a dielectric case. The high frequency electrode has a go-and-return conductor structure that two electrode conductors are disposed close to and in parallel to each other with a gap therebetween to form a rectangular plate shape as a whole, and the two electrode conductors are connected by a conductor at an end in the longitudinal direction. A high frequency current flows in the two electrode conductors in opposite directions. A plurality of openings are formed on edges of the two electrode conductors on the side of the gap, and the openings are dispersed and arranged in the longitudinal direction of the high frequency electrode. The antenna is disposed in a vacuum container in a direction that a main surface of the high frequency electrode and a surface of the substrate are substantially perpendicular to each other.

Abstract: A plasma processing apparatus includes a mounting stage on which a substrate is mounted, a focus ring arranged around a periphery of the mounting stage, a plurality of magnetic members arranged at a surface of the focus ring and a surface of the mounting stage facing opposite each other, and a temperature adjustment unit configured to adjust a temperature of the focus ring by introducing a heat transfer gas between the surface of the focus ring and the surface of the mounting stage facing opposite each other.

Abstract: Preferably, obtaining internal and external thermal measurement values of a sealed process chamber allows a control system to generate a control signal based on a comparison of the internal and external thermal measurement values to the predetermined value. The control signal is provided to a fluid handling system, wherein the fluid handling system modulates flow of a first fluid around the exterior of the sealed process chamber. The control signal is further provided to a closed loop heat exchange system, wherein the closed loop heat exchange system modulates flow of a second fluid within an interior cavity of the sealed process chamber based on the control signal. The control signal is still further provided to an open loop heat exchange system, wherein the open loop heat exchange system modulates flow of a third fluid within the interior of cavity of the sealed process chamber.

Abstract: A semiconductor substrate processing apparatus includes a cooled pin lifter paddle for raising and lowering a semiconductor substrate. The semiconductor substrate processing apparatus comprises a processing chamber in which the semiconductor substrate is processed, a heated pedestal for supporting the semiconductor substrate in the processing chamber, and the cooled pin lifter paddle located below the pedestal. The cooled pin lifter paddle includes a heat shield and at least one flow passage in an outer peripheral portion thereof through which a coolant can be circulated to remove heat absorbed by the heat shield of the cooled pin lifter paddle. The cooled pin lifter paddle is vertically movable such that lift pins on an upper surface of the heat shield travel through corresponding holes in the pedestal and a source of coolant is in flow communication with the at least one flow passage.

Abstract: A microwave plasma processing apparatus includes an inner slow-wave plate installed above a first slot in an inner waveguide which transmits microwaves to the first slot by transmitting the microwaves in a center side space, which is positioned closer to the center than the convex portion in the space between the slot plate and the intermediate metal body, through the space between the inner conductor and the intermediate conductor. An outer slow-wave plate is installed above a second slot in an outer waveguide which transmits microwaves to the second slot by transmitting the microwaves in an outer periphery side space, which is positioned closer to an outer periphery than the convex portion in the space between the slot antenna plate and the intermediate metal body, sequentially through the space between the intermediate conductor and the outer conductor, and the space between the intermediate metal body and cooling plate.

Abstract: Disclosed is a microwave plasma processing apparatus. The microwave plasma processing apparatus includes a cooling plate. In addition, the microwave plasma processing apparatus includes an intermediate metal body installed on a processing container side of the cooling plate to be spaced apart from the cooling plate so that a spacing between the intermediate metal body and the cooling plate forms a waveguide of microwaves. The intermediate metal body is in contact with the cooling plate at one or plural convex portions arranged to block a portion of the waveguide. Further, the microwave plasma processing apparatus includes a coaxial waveguide configured to supply microwaves to the waveguide, a slot antenna plate configured to radiate microwaves via the waveguide, a dielectric window installed on the processing container side of the slot antenna plate, and a processing container installed to be sealed by the dielectric window.

Abstract: Disclosed is a microwave plasma processing apparatus. The microwave plasma processing apparatus includes a coaxial waveguide installed in a through hole which is formed in the center side portion in the intermediate metal body to extend continuously through the cooling plate and the intermediate metal plate. The coaxial waveguide includes an inner conductor, an intermediate conductor and an outer conductor. Each of a space between the inner conductor installed in a hollow portion of the intermediate conductor and the intermediate conductor and a space between the intermediate conductor installed in a hollow portion of the outer conductor and the outer conductor transmits microwaves. A difference between an inner diameter of the outer conductor and an outer diameter of the intermediate conductor is larger than a difference between an outer diameter of the inner conductor and an inner diameter of the intermediate conductor.

Abstract: A substrate support may include a body; an inner ring disposed about the body; an outer ring disposed about the inner ring forming a first opening therebetween; a first seal ring disposed above the first opening; a shadow ring disposed above the inner ring, extending inward from the outer ring and forming a second opening between the shadow and outer rings; a second seal ring disposed above the second opening; a space at least partially defined by the body and the inner, outer, first, second, and shadow rings; a first gap defined between a processing surface of a substrate when present and the shadow ring; and a plurality of second gaps fluidly coupled to the space; wherein the first gap and the plurality of second gaps are configured such that, when a substrate is present, a gas provided to the space flows out of the space through the first gap.

Abstract: Embodiments of an apparatus having an improved coil antenna assembly that can provide enhanced plasma in a processing chamber is provided. The improved coil antenna assembly enhances positional control of plasma location within a plasma processing chamber, and may be utilized in etch, deposition, implant, and thermal processing systems, among other applications where the control of plasma location is desirable. In one embodiment, an electrode assembly configured to use in a semiconductor processing apparatus includes a RF conductive connector, and a conductive member having a first end electrically connected to the RF conductive connector, wherein the conductive member extends outward and vertically from the RF conductive connector.

Abstract: Systems and methods of the invention generally relate to altering the functionality of a non-transient electronic device. A container holding an agent is located proximal to a non-transient electronic device capable of performing at least one function. The agent is capable of rendering the device incapable of performing the at least one function. The container is configured to controllably release the agent to the electronic device in a variety of passive and active eventualities.

Abstract: Provided are a method and apparatus for cleaning organic materials accumulated on a mask used in a process of depositing organic materials. The apparatus includes a plasma generating unit, a cleaning chamber connected to the plasma generating unit and accommodating the mask therein, a gas injection port disposed within the cleaning chamber configured to inject the plasma, and a cooling device disposed on a first surface of the mask opposite to an opposite surface of the mask facing the gas injection port.

Abstract: Embodiments of gate valves and methods of using same are provided herein. In some embodiments, a gate valve for use in a process chamber may include a body having an opening disposed therethrough from a first surface to an opposing second surface of the body; a pocket extending into the body from a sidewall of the opening; a gate movably disposed within the pocket between a closed position that seals the opening and an open position that reveals the opening and disposes the gate completely within the pocket; and a shutter configured to selectively seal the pocket when the gate is disposed in the open position. In some embodiments, one or more heaters may be coupled to at least one of the body or the shutter.