Abstract: An assembly for cathodic arc deposition of a material onto an article. The assembly includes a chamber for receiving an article to be coated and a rotating target. The rotatable target has a surface from which a plasma material is ejected. An anode ring is positioned a first distance from the surface of the rotatable target. The anode ring has an opening with a central axis that is parallel to a rotational axis of the rotatable target and offset a second distance from the rotational axis. A spark device is disposed in the chamber for generating an arc on the surface of the rotatable target. The assembly configured to direct a stream of charged particles ejected from the surface of the target through the opening of the anode ring to the article to be coated.

Abstract: A method for coating substrates in an arc vaporization source for generating hard surface coatings on tools is provided. The method includes providing an arc-vaporization source with at least one electric solenoid and a permanent magnet arrangement including marginal permanent magnets and a central permanent magnet. The method further includes adjusting the position of the central and marginal permanent magnets relative to the target surface in at least three settings, adjusting the strength of the generated magnetic field based on the position of the central and marginal permanent magnets among the at least three settings, and coating the substrates by an ARC vaporization coating process performed by the ARC vaporization source at each of the at least three settings.

Abstract: The present invention relates to an arc vaporization source for generating hard surface coatings on tools. The invention comprises an arc-vaporization source, comprising at least one electric solenoid and a permanent magnet arrangement that is displaceable relative to the target surface. The vaporization source can be adjusted to the different requirements of oxide, nitride, or metal coatings. The rate drop during the lifespan of a target to be vaporized can be held constant or adjusted by suitably adjusting the distance of the permanent magnets to the front side of the target. A compromise between the coating roughness and rate can be set.

Abstract: A sputtering system and a sputtering method are provided. The sputtering system includes a first electrode, a magnet and a second electrode. The first electrode is an elongated tube having a first end and a second end downstream of the first end. The first end is configured to receive a gas flow and the second end is placed next to a substrate. The magnet surrounds at least a portion of the elongated tube and is configured to generate a magnetic field in a space within the elongated tube. The second electrode is disposed within the elongated tube. A voltage is configured to be applied between the first and second electrodes to generate an electric field between the first and second electrodes.

Abstract: A plasma processing apparatus includes a processing chamber configured to process a substrate, a plasma generator configured to generate a plasma, a transport unit configured to transport, to the processing chamber, the plasma generated by the plasma generator, and a scanning magnetic field generator configured to generate a magnetic field which deflects the plasma so as to scan the substrate by the plasma. The scanning magnetic field generator is configured to be capable of adjusting a center of a locus of the plasma.

Abstract: An arc coating system includes a coating chamber having a peripheral chamber wall, a top wall, and a bottom wall. The peripheral chamber wall, the top wall, and the bottom wall define a coating cavity and a chamber center. A plasma source is positioned at the chamber center wherein the plasma source comprises a central cathode rod and a plurality of cathode rods surrounding the central cathode rod. The coating system also includes a sample holder that holds a plurality of substrates to be coated. Characteristically, the sample holder rotatable about the chamber center at a first distance from the chamber center.

Abstract: The invention relates to a method for producing layers consisting of ternary and higher oxides of metallic and semi-metallic components, wherein the formation temperature of these oxides can be determined essentially through the composition of the binary (or higher) alloy targets (based on the phase diagram).

Abstract: A microplasma sputter deposition system suitable for directly writing two-dimensional and three-dimensional structures on a substrate is disclosed. Deposition systems in accordance with the present invention include a magnetic-field generator that provides a magnetic field that is aligned with the arrangement of an anode and a wire target. This results in a plasma discharge within a region between a wire target and an anode that is substantially a uniform sheet, which gives rise to the deposition of material on the substrate in highly uniform and radially symmetric fashion.

Abstract: This invention relates to an arc-based method for the deposition of insulating layers and to an arc-based method for low-temperature coating processes, in which an electric arc discharge, ignited and applied on the surface of a target in an arc source, is simultaneously fed a direct current and a pulsed or alternating current. The invention further relates to an arc source in which the target is connected to a power supply unit that encompasses either a minimum of one pulsed high-current power supply 18, 18? and an additional power supply 13?, 18?, or a power supply 21, 21?, 22 designed with switchable combinatorial circuitry.

Abstract: A processing apparatus for processing a substrate in a vacuum processing space in a chamber includes a shield arranged in the chamber, and a holding portion configured to hold the shield by a magnetic force. The holding portion has a holding surface on which a first magnet is arranged. The shield includes a second magnet configured to generate an attraction force with respect to the first magnet, and a receiving portion configured to receive a tool configured to move the shield with respect to the holding portion.

Abstract: A coating system includes a vacuum chamber and a coating assembly positioned within the vacuum chamber. The coating assembly includes a vapor source that provides material to be coated onto a substrate, a substrate holder to hold substrates to be coated such that the substrates are positioned in front of the vapor source, a cathode chamber assembly, and a remote anode. The cathode chamber assembly includes a cathode, an optional primary anode and a shield which isolates the cathode from the vacuum chamber. The shield defines openings for transmitting an electron emission current from the cathode into the vacuum chamber. The vapor source is positioned between the cathode and the remote anode while the remote anode is coupled to the cathode.

Abstract: The invention provides an arc coating apparatus having a steering magnetic field source comprising steering conductors (62, 64, 66, 68) disposed along the short sides (32c, 32d) of a rectangular target (32) behind the target, and a magnetic focusing system disposed along the long sides (32a, 32b) of the target (32) in front of the target which confines the flow of plasma between magnetic fields generated on opposite long sides (32a, 32b) of the target (32). The plasma focusing system can be used to deflect the plasma flow off of the working axis of the cathode. Each steering conductor (62, 64, 66, 68) can be controlled independently. In a further embodiment, electrically independent steering conductors (62, 64, 66, 68) are disposed along opposite long sides (32a, 32b) of the cathode plate (32), and by selectively varying a current through one conductor, the path of the arc spot shifts to widen the erosion corridor.

Abstract: The invention relates to a method and an apparatus for applying metallic, ceramic or composite thin film coatings onto parts, components and tools (e.g. gas turbine engine compressor blades or cutting tools) by a cathodic arc deposition technique. The method and the apparatus allows for a continually changing structure of the applied film by nanoimplanting atoms, molecules, compounds or other chemical species and structures of different materials thus coating a substrate during a single process. Furthermore, during the same process it allows for creating a coating with specific parameters as required. For instance: hardness, smoothness, corrosion resistance, erosion resistance.

Abstract: Vacuum deposition apparatus including cathodic arc source for application of coatings on the substrate. Cathodic arc source comprises focusing magnetic source for generating magnetic field, arc cathode containing film forming material and anode. The focusing magnetic source is placed between arc cathode and substrate. Arc spot generated on the cathode evaporation surface is kept by the magnetic field lines in the place where the magnetic field lines are perpendicular to the cathode surface.

Abstract: A system for use in coating an interior surface of an object is provided. The system includes a vacuum chamber enclosure defining an interior cavity configured to receive the object, an anode positioned within the interior cavity of the vacuum chamber enclosure, and a cathode positioned within the interior cavity of said vacuum chamber enclosure such that a space between the anode and the cathode is at least partially defined by the interior surface of the object. At least a portion of the cathode vaporizes when current is supplied thereto such that vaporized cathode material coats the interior surface of the object.

Abstract: A system for use in coating an interior surface of an object is provided. The system includes a vacuum chamber enclosure defining an interior configured to receive the object, and a cathode coupled to the vacuum chamber enclosure. The cathode is fabricated from a coating material and has an outer surface. The cathode is configured such that when a current is applied to the cathode, an arc is formed on the outer surface and the coating material is removed from the cathode to form a cloud of coating material. The system also includes a collimator configured to be positioned between the cathode and the object configured to focus the cloud into a beam of coating material and to direct the beam towards the object, and a magnet configured to alter a path of the beam such that the beam is directed towards the interior surface of the object.

Abstract: Electrically charged droplets and neutral droplets mixed with plasma are removed with better efficiency, and an improvement in the surface treatment precision of film formation by high purity plasma is sought. In a plasma processing apparatus including plasma generating portion A, plasma transport tube B and plasma processing portion C, an insulator interposed plasma processing apparatus is constituted in which plasma transport tube B is made electrically independent from plasma generating portion A and plasma processing portion C electrically by interposing insulator IS and insulator IF between the starting end side and the finishing end side of the plasma transport tube. Plasma transport tube B is divided into multiple small transport tubes B01, B23 through intermediate insulator II1, and each small transport tube is made independent electrically.

Abstract: A deposition apparatus comprises a source unit having a function of generating a plasma by an arc discharge; and a filter unit configured to transport the plasma generated by the source unit toward a material to be deposited, wherein the filter unit includes a duct configured to transport the plasma, a magnetic field formation unit configured to form, in the duct, a magnetic field for transporting the plasma, and a magnetic field bending unit configured to generate a magnetic force for bending the magnetic field formed by the magnetic field formation unit.

Abstract: A plasma deposition apparatus includes a cathode assembly including a cathode disk and a water-coolable cathode holder supporting the cathode disk, an anode assembly including a water-coolable anode holder, a substrate mounted on the anode holder to serve as an anode, and a substrate holder mounting and supporting the substrate, and a reactor for applying a potential difference between opposing surfaces of the cathode assembly and the anode assembly under a vacuum state to form plasma of a raw gas. The cathode disk comes into thermal contact with the cathode holder using at least one of a self weight and a vacuum absorption force so as to permit thermal expansion of the cathode disk.

Abstract: A production method combining cathode arc and magnetron sputtering methods to form an antibacterial film on the surface of an object. Inside the vacuum chamber, both a cathode arc target source and a magnetron sputtering target source are configured. On the cathode arc target source, at least one of a zirconium, titanium, or chromium target is installed. On the magnetron sputtering target source, a silver target is installed. Argon and nitrogen are filled into the vacuum chamber to respectively ionize the silver target and one of the zirconium target, titanium target, or chromium target. Remote control is used to adjust the ionization proportion between one of the zirconium, titanium, or chromium target and the silver target to be 90-99%:1-9%. The surface of the object is formed with one of the zirconium nitride-silver mixed antibacterial film, titanium nitride-silver mixed antibacterial film, or chromium nitride-silver mixed antibacterial film.

Abstract: A process for coating a part comprises the steps of providing a chamber which is electrically connected as an anode, placing the part to be coated in the chamber, providing a cathode formed from a coating material to be deposited and platinum, and applying a current to the anode and the cathode to deposit the coating material and the platinum on the part.

Abstract: An anode unit is connected with an arc power supply having a positive terminal. The unit includes—an anode with an inlet,—a focusing coil encircling the anode, generating a focusing magnetic field,—a deflection coil being a conductive cooled pipe within an electro-conductive shell mounted in the anode, generating a deflection field opposite to the focusing one, having a distal butt end distal to the inlet and a proximal butt end proximal thereto, and a beginning turn,—a deflection permanent magnet inside the deflection coil facing the proximal end, generating a permanent deflection field, and—an additional permanent magnet inside the deflection coil facing the distal end, generating an additional magnetic field opposite to the permanent deflection one. The positive terminal is connected to the anode through the focusing coil and to the shell through the deflection coil. The beginning turn has a thermal contact with the shell.

Abstract: A stinger for a cathodic arc vapor deposition system includes a head with a reduced area contact interface.

Abstract: A mask assembly for a coating system includes a second mask that mounts to a first mask and is retained thereto by a pin. A method of masking a component for a cathodic arc vapor deposition system includes retaining a first mask to a second mask with a platter mount pin.

Abstract: The invention relates to a method for using a target for a coating process of metal oxide and/or metal nitride coatings by means of spark evaporation, wherein the target can be operated at a temperature that is higher than the melting point of the metal used in the target, and wherein the target is comprised of a metal whose oxides and/or nitrides are not electrically conducting. The invention further relates to the use of a target for producing metal oxide coatings and/or metal nitride coatings by means of spark evaporation, wherein the target has a matrix comprised of a metal, in which matrix non electrically conducting oxides and/or nitrides of the metal are embedded.

Abstract: Evaporation source, in particular for use in a sputtering process or in a vacuum arc evaporation process, preferably a cathode vacuum arc evaporation process. The evaporation source includes an inner base body which is arranged in an outer carrier body and which is arranged with respect to the outer carrier body such that a cooling space in flow communication with an inlet and an outlet is formed between the base body and the carrier body. In accordance with the invention, the cooling space includes an inflow space and an outflow space, and the inflow space is in flow communication with the outflow space via an overflow connection for the cooling of the evaporation source such that a cooling fluid can be conveyed from the inlet via the inflow space the overflow connection and the outflow space to the outlet.

Abstract: A deposition method comprises flowing a first gas into a metallization zone maintained at a first pressure. A second gas flows into a reaction zone maintained at a second pressure. The second pressure is less than the first pressure. A rotating drum includes at least one substrate mounted to a surface of the drum. The surface alternately passes through the metallization zone and passes through the reaction zone. A target is sputtered in the metallization zone to create a film on the at least one substrate. The film on the at least one substrate is reacted in the reaction zone.

Abstract: A target for the deposition of mixed crystal layers with at least two different metals on a substrate by means of arc vapor deposition (arc PVD), wherein the target includes at least two different metals. To produce mixed crystal layers which are as free as possible of macroparticles (droplets) according to the invention at least the metal with the lowest melting point is present in the target in a ceramic compound, namely as a metal oxide, metal carbide, metal nitride, metal carbonitride, metal oxynitride, metal oxycarbide, metal oxycarbonitride, metal boride, metal boronitride, metal borocarbide, metal borocarbonitride, metal borooxynitride, metal borooxocarbide, metal borooxocarbonitride, metal oxoboronitride, metal silicate or mixture thereof, and at least one metal different from the metal with the lowest melting point is present in the target in elemental (metallic) form.

Abstract: A coating system includes a vacuum chamber and a coating assembly positioned within the vacuum chamber. The coating assembly includes a vapor source that provides material to be coated onto a substrate, a substrate holder to hold substrates to be coated such that the substrates are positioned in front of the vapor source, a cathode chamber assembly, and a remote anode. The cathode chamber assembly includes a cathode, an optional primary anode and a shield which isolates the cathode from the vacuum chamber. The shield defines openings for transmitting an electron emission current from the cathode into the vacuum chamber. The vapor source is positioned between the cathode and the remote anode while the remote anode is coupled to the cathode.

Abstract: A vacuum coating apparatus is disclosed. The apparatus includes a cathode target, a plurality of anodes, a transiting device, a pulsed arc discharge device, and a pulsed laser device. The plurality of anodes is placed on the transiting device and successively passes though a working position by the transiting device. The pulsed arc discharge device is electrically connected to the cathode target and the anode at the operable position to form plasma in a vacuum chamber for film coating. The pulsed laser device is located outside of the vacuum chamber and provides a pulsed laser beam onto the surface of the cathode surface to serve as a plasma trigger. A coating method for the vacuum coating apparatus is also disclosed.

Abstract: An apparatus for the application of coatings in a vacuum comprising a plasma duct surrounded by a magnetic deflecting system communicating with a first plasma source and a coating chamber in which a substrate holder is arranged off of an optical axis of the plasma source, has at least one deflecting electrode mounted on one or more walls of the plasma duct. In one embodiment an isolated repelling or repelling electrode is positioned in the plasma duct downstream of the deflecting electrode where the tangential component of a deflecting magnetic field is strongest, connected to the positive pole of a current source which allows the isolated electrode current to be varied independently and increased above the level of the anode current. The deflecting electrode may serve as a getter pump to improve pumping efficiency and divert metal ions from the plasma flow.

Abstract: The present invention relates to an ignition device for igniting a high-current discharge of an electrical arc evaporator in a vacuum coating system. Ignition is performed by means of mechanically closing and opening a contact between the cathode and the anode. Contact is established by means of an ignition finger that can move on a forced path. On account of the forced path, the ignition finger can be moved by means of a simple mechanical drive to a park position, which is protected against coating, and said ignition finger can also be used to ignite a second target.

Abstract: A method and apparatus for depositing a metal onto a substrate using a cathodic arc plasma source as a source of metal ions. A plasma deposition apparatus has a vacuum chamber; and a conduit within the vacuum chamber having an input end and an output end. A substrate is within the vacuum chamber, positioned to receive a plasma at the output end of the conduit. A cathodic arc plasma source within the vacuum chamber is positioned to inject a composition comprising a mixture of a plasma and electrons into the input end of the conduit toward the output end of the conduit. A magnetic field generator establishes a magnetic field within the conduit a plurality of electrodes located within the magnetic field and an electric field generator establishes an electric field within the conduit. The apparatus reduces or eliminates liquid metal droplets emitted from such a plasma source.

Abstract: A surface coating method for an orthodontic corrective bracket is provided, in which each orthodontic bracket formed of ceramic is covered with a titanium coating layer having a predetermined thickness so as to be able to minimize a frictional force and to increase surface hardness and durability while a wire fitted into slots of the brackets applies orthodontic tension to teeth. Accordingly, when the teeth are corrected using the ceramic orthodontic brackets on whose surfaces the titanium coating layer having a predetermined thickness is formed, the frictional force can be minimized while the wire fitted into the slots of the brackets is applying the orthodontic tension to the teeth, and thus it is possible to realize a tooth movement path desired by an orthodontist and to shorten a treatment period.

Abstract: An arrangement for the separation of particles from plasma for the formation of a coating onto the surface of a substrate under vacuum conditions. The plasma is advantageously formed by electrical arc discharge. The plasma is formed from a target that can be connected as a cathode and positive charge carriers of the plasma are accelerated in the direction of a surface of a substrate to be coated by at least one absorber electrode connected to an electrical potential that is positive with respect to the plasma. The absorber electrode is arranged and orientated such that a direct incidence of plasma onto the absorber electrode is avoided and can be designed in plate form aligned at an obliquely inclined angle which takes account of the divergence of the plasma flow. In addition, at least one permanent magnet or electromagnet element is a component of the arrangement.

Abstract: A continuous vacuum sputtering method includes the steps of providing a substrate; providing a continuous vacuum sputtering machine comprising a depositing chamber. The depositing chamber comprising at least one vacuum chamber, each vacuum chamber having a cathodic arc emitting source located therein; the substrate being loaded in the continuous vacuum sputtering machine; depositing a coating on the substrate by cathodic arc deposition using the cathodic arc emitting source.

Abstract: An arc evaporation source (101) according to one embodiment of the present invention comprises: a ring-shaped circumferential magnet (103) which is so arranged as to surround the outer circumference of a target (102) along a direction in which the direction of magnetization becomes parallel with the front surface of the target; and a rear surface magnet (104) which is arranged on the rear surface side of the target (102) along a direction in which the direction of magnetization becomes perpendicular to the front surface of the target. The magnetic pole of the circumferential magnet (103) on the inner side in the radial direction and the magnetic pole of the rear surface magnet (104) on the target (102) side have the same polarity as each other.

Abstract: A system and method for producing graphene includes a heating block, substrate, motor and collection device. The substrate is arranged about the heating block and is configured to receive heat from the heating block. A motor is connected to the substrate to rotate the substrate about the heating block. A cathode and anode are configured to direct a flux stream for deposit onto the rotating substrate. A collection device removes the deposited material from the rotating substrate. A heating element is embedded in the heating block and imparts heat to the heating block. The heating block is made of cement or other material that uniformly disperses the heat from the heating element throughout the heating block. The flux stream can be a carbon vapor, with the deposited flux being graphene.

Abstract: A method and apparatus are described for very low pressure high powered magnetron sputtering of a coating onto a substrate. By the method of this invention, both substrate and coating target material are placed into an evacuable chamber, and the chamber pumped to vacuum. Thereafter a series of high impulse voltage pulses are applied to the target. Nearly simultaneously with each pulse, in one embodiment, a small cathodic arc source of the same material as the target is pulsed, triggering a plasma plume proximate to the surface of the target to thereby initiate the magnetron sputtering process. In another embodiment the plasma plume is generated using a pulsed laser aimed to strike an ablation target material positioned near the magnetron target surface.

Abstract: A plasma processing apparatus using a plasma generating apparatus by which droplets mixed in plasma can be efficiently removed and surface processing precision can be improved in film formation wherein high purity plasma is used. A droplet removing portion arranged in a plasma advancing path is composed of a straight plasma advancing tube (P0) connected to a plasma generating portion (A); a first plasma advancing tube (P1) connected to the straight plasma advancing tube (P0) in a bent manner; a second plasma advancing tube (P2) connected to a finishing end of the first plasma advancing tube (P1) by being inclinedly arranged at a predetermined inclination angle with respect to the tube axis of the first plasma advancing tube; and a third plasma advancing tube (P3), which is connected to the finishing end of the second plasma advancing tube (P2) in a bent manner and discharges plasma from a plasma outlet.

Abstract: The present invention relates to an arc deposition source, comprising an electrically conductive ceramic target plate (1), on the back of which a cooling plate (10) is provided, wherein a shield (3) is provided in the central area on the surface to be coated so that the cathode spot of the arc does not reach the central area (6) of the surface during operation of the deposition source.

Abstract: The present invention relates to a filtered cathodic-arc ion source that reduces, or even eliminates, macroparticles while minimally compromising the compact size, simplicity, and high flux ion production benefits of unfiltered cathodic-arc sources. Magnetic and electrostatic forces are implemented in a compact way to guide ions along curved trajectories between the cathode source and the workpiece area such that macroparticles, which are minimally affected by these forces and travel in straight lines, are inhibited from reaching the workpieces. The present invention implements this filtering technique in a device that is compact, symmetrical and easy to manufacture and operate and which does not substantially compromise coating deposition rate, area, or uniformity.

Abstract: A coating source for physical vapor deposition has at least one component, which has been produced from at least one pulverulent starting material in a powder metallurgy production process and at least one ferromagnetic region embedded in the component. The at least one ferromagnetic region, is introduced into the component and fixedly connected to the component during the powder metallurgy production process.

Abstract: A composite coating apparatus includes a main body, two carrying boards, and two actuators. The main body defines a first chamber and a second chamber with a separating board intervening therebetween. The separating board defines a coating opening intercommunicating with the chambers. The carrying boards are received in the first chamber and rotatably connected to the separating board at two sides of the coating opening. Each carrying board defines a receiving groove for holding a substrate. The actuators are configured for driving the carrying boards to rotate between a first coating position, in which the substrate is exposed to the second chamber for a first coating process carried out in the second chamber via the coating opening, and a second coating position, in which the substrate faces away from the separating board for a second coating process carried out in the first chamber.

Abstract: A coating apparatus includes a housing, a sputter mechanism, an evaporation mechanism, and a workpiece transport assembly. The housing defines a receiving space. The workpiece transport assembly includes a fixing plate, a first transport member, and a first shaft. The fixing plate is secured to the housing via the receiving space and divides the receiving space into a sputter chamber and an evaporation chamber. The sputter mechanism is mounted in the sputter chamber, and the evaporation mechanism is mounted in the evaporation chamber. The fixing plate defines a through hole. The sputter chamber communicates with the evaporation chamber via the through hole. The first transport member is configured to transport at least one workpiece. The first shaft is secured to the first transport member and rotatably mounted to the housing.

Abstract: In a vacuum are evaporation apparatus, to stably maintain vacuum arc discharge at an arc source when depositing a cathode material on a substrate, namely a magnetic recording medium, an ungrounded anode of a coil-type tube is placed inside an are source discharge vacuum chamber. A DC are power supply is connected between the cathode and the anode to cause an are current to flow in the anode to generate a first magnetic field in one direction, from the cathode toward the anode. A second magnetic field is generated in the opposite direction, from the anode to the cathode by feeding a specified current to an external coil positioned around the discharge chamber. The external coil includes an around-cathode coil and an around-anode coil. The arc discharge can be started by operating a striker to carry out the deposition.

Abstract: A plasma processing device according to the present invention includes a plasma processing chamber, a plasma producing chamber communicating with the plasma processing chamber, a radio-frequency antenna for producing plasma, a plasma control plate for controlling the energy of electrons in the plasma, as well as an operation rod and a moving mechanism for regulating the position of the plasma control plate. In this plasma processing device, the energy distribution of the electrons of the plasma produced in the plasma producing chamber can be controlled by regulating the distance between the radio-frequency antenna 16 and the plasma control plate by simply moving the operation rod in its longitudinal direction by the moving mechanism. Therefore, a plasma process suitable for the kind of gas molecules to be dissociated and/or their dissociation energy can be easily performed.

Abstract: Vacuum treatment installation or vacuum treatment method for carrying out a plasma method, wherein the treatment is carried out in a vacuum chamber, in which are disposed a device for generating an electric low voltage arc discharge (NVBE) comprised of a cathode and an anode electrically interconnectable with the cathode via an arc generator, and a workpiece carrier electrically interconnectable with a bias generator for receiving and moving workpieces, as well as at least one feed for inert and/or reactive gas. At least a portion of the surface of the anode is therein fabricated of graphite and is operated at high temperature.

Abstract: A filter for filtering macro-particles from a plasma beam, having a bended duct for carriage of the plasma beam, the bended duct comprising an intermediate portion connected at one end to an inlet portion having a longitudinal axis disposed on an inlet plane and at another opposite end to an outlet portion having a longitudinal axis disposed on an outlet plane. The inlet portion allows the plasma beam containing macro-particles to travel toward the intermediate portion in an incident direction and the outlet portion allows the plasma beam to travel from the intermediate portion in an emergent direction. The intermediate portion is configured to deviate the incident direction to the emergent direction at an angle of more than 90° and thereby remove macro-particles from the plasma beam as it passes through the intermediate portion. The inlet plane and outlet plane are disposed at an offset angle from each other.

Abstract: A method of forming targets for cathodic arc deposition of alloy bond coats for turbine engines components consists of melting a base alloy containing aluminum and other metals, adding grain boundary strengthening alloy additions, and casting the melt to form a cylindrical billet that is subsequently sectioned into puck shaped targets. The grain boundary strengthening additions minimize intergranular fracture of the targets during high current operation of the arc coating process.