Abstract: An apparatus includes a first conductive patch coupled to a first surface of a dielectric layer, a second conductive patch coupled to a second surface of the dielectric layer, and a probe coupled to the second conductive patch. The apparatus further includes a waveguide having a wall conductively coupled to the first conductive patch. Responsive to a signal provided to the second conductive patch by the probe, interaction of the waveguide, the first conductive patch, and the second conductive patch generates a transmission signal that propagates in the waveguide.

Abstract: A coaxial filter having a frame construction comprises at least one filter frame, which consists of an electrically conductive medium and comprises a receiving space. A cover arrangement closes the receiving space on all sides. At least one first resonator internal conductor is arranged in the receiving space. The at least one first resonator internal conductor is galvanically connected to a face of the at least one electrically conductive filter frame, and extends therefrom in the direction of another, in particular opposing face of the electrically conductive filter frame, and ends at a distance from the opposing face of the electrically conductive filter frame and/or is galvanically separated from the opposing face of the electrically conductive filter frame.

Abstract: A solid state device chip including diodes (generating a higher frequency output through frequency multiplication of the input frequency) and a novel on-chip power combining design. Together with the on-chip power combining, the chip has increased efficiency because the diodes' anodes, being micro-fabricated simultaneously on the same patch of a GaAs wafer under identical conditions, are very well balanced. The diodes' GaAs heterostructure and the overall chip geometry are designed to be optimized for high power operation. As a result of all these features, the device can generate record-setting power having a signal frequency in the F-band and W-band (30% conversion efficiency).

Abstract: An input signal is routed from a first component to a second component. The second component multiplies the frequency of the received signal by at least one component part with a non-linear characteristic curve.

Abstract: A novel MMIC on-chip power-combined frequency multiplier device and a method of fabricating the same, comprising two or more multiplying structures integrated on a single chip, wherein each of the integrated multiplying structures are electrically identical and each of the multiplying structures include one input antenna (E-probe) for receiving an input signal in the millimeter-wave, submillimeter-wave or terahertz frequency range inputted on the chip, a stripline based input matching network electrically connecting the input antennas to two or more Schottky diodes in a balanced configuration, two or more Schottky diodes that are used as nonlinear semiconductor devices to generate harmonics out of the input signal and produce the multiplied output signal, stripline based output matching networks for transmitting the output signal from the Schottky diodes to an output antenna, and an output antenna (E-probe) for transmitting the output signal off the chip into the output waveguide transmission line.

Abstract: Example three-dimensional signal interconnections for electromagnetic waves and methods for fabricating the interconnections are described. An example apparatus may include a first conducting layer including a plurality of through-holes, and a first layer between the first conducting layer and a second conducting layer. The first layer may include a plurality of through-holes, and the second conducting layer may also include a plurality of through-holes. The plurality of through-holes of the first layer may at least partially be aligned with the plurality of through-holes of the first conducting layer and the plurality through-holes of the second conducting layer. The apparatus may further include a second layer between the second conducting layer and a third conducting layer. The second layer may have a first waveguide channel and a second waveguide channel substantially perpendicular to and intersecting with the first waveguide channel.

Abstract: Methods for increasing a signal frequency include generating two or more signals having a fundamental mode and one or more harmonics; phase shifting bifurcated components of the two or more signals in transmission lines; and combining the bifurcated components to create an output signal that cancels a fundamental mode, a second harmonic, and a third harmonic in the signals to produce a frequency-multiplied output signal.

Abstract: A symmetric frequency multiplier includes four non-linear devices configured to receive an input signal having a fundamental mode and to provide an output having one or more harmonics; and three collinear transmission lines, each having a length of about one quarter of an input wavelength, configured to receive the outputs of the non-linear devices and configured to combine bifurcated components of the signals from the non-linear devices into two frequency-multiplied output signals. Two of the signals from the non-linear devices are provided at respective ends of the collinear transmission lines and two of the signals from the non-linear devices are provided between transmission lines, such that each of the bifurcated components of a given signal passes through a different subset of the transmission lines.

Abstract: A frequency multiplier includes an input circuit, an output circuit, and a resonance circuit. The input circuit is coupled to an input node and a middle node. The middle node provides a middle signal that has a signal component having the same frequency as an input signal that is provided to the input node. The middle signal further has an even number “n” multiple of the input signal frequency. The output circuit has a predetermined input impedance for the middle node. The resonance circuit includes an inductor that is coupled in series with a capacitor, where the capacitor is in a parallel connection to the middle node. The resonance circuit has a resonance frequency that is equal to a frequency of the input signal, and such resonance circuit also has an output impedance that matches with the predetermined input impedance of the output circuit.

Abstract: A passive frequency divider in a CMOS process. More specifically, an electrical distributed parametric oscillator to realize a passive CMOS frequency divider with low phase noise. Instead of using active devices, which are the main sources of noise and power consumption, an oscillation at half of the input frequency is sustained by the parametric process based on nonlinear interaction with the input signal. For example, one embodiment is a 20 GHz frequency divider utilizing a CMOS varactor and made in a 0.13 ?m CMOS process. In this embodiment: (i) without any dc power consumption, 600 mV differential output amplitude can be achieved for an input amplitude of 600 mV; and (ii) the input frequency ranged from 18.5 GHz to 23.5 GHz with varactor tuning. In this embodiment, the output phase noise is almost 6 dB lower than that of the input signal for all offset frequencies up to 1 MHz. Also, a resonant parametric amplifier with a low noise figure (NF) by exploiting the noise squeezing effect.

Abstract: A multiplier circuit including; a 90 degrees coupler that divides an input signal into a first input signal and a second input signal of which phase difference of a base wave is 90 degrees; a first transistor that receives the first input signal and outputs a first output signal including at least a doubled wave and a tripled wave of the first input signal; a second transistor that receives the second input signal and outputs a second output signal including at least a doubled wave and a tripled wave of the second input signal; and a combiner that restrains leakage of the first output signal or the second output signal from one of the first transistor and the second transistor to the other, combines the first output signal and the second output signal, and outputs an output signal of the tripled wave.

Abstract: A millimeter-wave wideband frequency doubler stage for use in a distributed frequency doubler includes: a differential input pair of transistors, each transistor having respective gate, drain and source terminals, wherein the source terminals are coupled together to a first power supply node and the drain terminals are coupled together at a first node to a second power supply node; first and second pairs of bandpass gate lines coupled to the gate terminals of the transistors; and a pair of bandpass drain lines coupled to the drain terminals of the transistors.

Abstract: A millimeter-wave wideband frequency doubler stage for use in a distributed frequency doubler includes: a differential input pair of transistors, each transistor having respective gate, drain and source terminals, wherein the source terminals are coupled together to a first power supply node and the drain terminals are coupled together at a first node to a second power supply node; first and second pairs of bandpass gate lines coupled to the gate terminals of the transistors; and a pair of bandpass drain lines coupled to the drain terminals of the transistors.

Abstract: A nonlinear solid-state device useful for frequency conversion of electromagnetic radiation and in particular for harmonic generation, comprising a waveguiding electromagnetically distributed structure (WEDS) which includes monolithically a synthetic nonlinear material (SNM). Input radiation coupled into the WEDS is converted into a higher frequency output radiation through a constricted oscillatory motion of charge carriers and phase matched harmonic frequency generation of radiation which builds up coherently over an interaction length many time larger than the radiation wavelengths. In one embodiment, microwave radiation is converted into terahertz radiation. In other embodiments, SNM based WEDS devices are adapted for frequency mixing and parametric oscillation.

Abstract: An output terminal 6 is provided at the connecting point 5 between the collector terminal of a transistor 1 and an open-ended stub 4 by connecting the open-ended stub 4 to the collector terminal of the transistor 1, the open-ended stub 4 having a line length equal to a quarter of the wavelength of a signal of frequency 2N·F0 or 2N times the oscillation frequency F0. In addition, an output terminal 9 is provided at a connecting point 8 located at a distance equal to a quarter of the wavelength of a signal of oscillation frequency F0 from the end of an open-ended stub 7 by connecting the open-ended stub 7 to the base terminal of the transistor 1, the open-ended stub 7 having a line length longer than a quarter of the wavelength of the signal of oscillation frequency F0.

Abstract: A nonlinear solid-state device useful for frequency conversion of electromagnetic radiation and in particular for harmonic generation, comprising a waveguiding electromagnetically distributed structure (WEDS) which includes monolithically a synthetic nonlinear material (SNM). Input radiation coupled into the WEDS is converted into a higher frequency output radiation through a constricted oscillatory motion of charge carriers and phase matched harmonic frequency generation of radiation which builds up coherently over an interaction length many time larger than the radiation wavelengths. In one embodiment, microwave radiation is converted into terahertz radiation. In other embodiments, SNM based WEDS devices are adapted for frequency mixing and parametric oscillation.

Abstract: A device for generating high powered Radio Frequency (RF) or microwave signals comprising a fast rise-time video pulse generator, a modulator to modify the generated UWB pulses by gyromagnetic action to transfer a portion of the UWB pulse energy from lower frequencies to frequencies in the RF or microwave range thereby producing a resultant RF or microwave waveform that can be radiated.

Abstract: The invention relates to millimetric packaged electronic components for applications at high frequencies greater than 45 GHz. According to the invention, to facilitate the design of a system including MMIC chips working at these frequencies, it is proposed to use packages containing one or more chips, these packages making it possible to work at these frequencies and including two types of port: a port with transition by contactless electromagnetic coupling providing a connection with an antenna at the high working frequency F via a waveguide; and a port with microstrip or coaxial line type transition enabling a connection at a subharmonic frequency F/N (preferably N=6 or 4 or, if necessary, 3) of the working frequency.

Abstract: A frequency converter having no solid-state devices having nonlinear characteristics and no complex resonator structure and operable in a wide frequency range from microwave frequencies to terahertz wave frequencies. An input section (1) inputs an input wave into a high-frequency transmission line (2). A waveguide portion of an output section (6) reflects the input wave. A laser light source (4) inputs a laser beam into an optical delay circuit (5). The optical delay circuit (5) delays the laser beam and directs the delayed laser beam into a high-frequency transmission line (2) and a substrate (3). The laser beam transmitted through the optical delay circuit (5) produces an electron-hole plasma over the surface of the substrate (3) such as of a semiconductor thereby to short-circuit the high-frequency transmission line (2) and to reflect the input wave. The reflection point moves at high speed together with the laser beam, thereby converting the frequency on the same principle as the Doppler effect.

Abstract: The invention can be used for telecommunications, measuring and other devices in order to produce stable superhigh frequency signals. An IMPATT diode (4) operating in the cascade break-down mode and having a sharp nonlinearity transforms an input signal in such a way that ultraharmonics which multiple in respect to the frequency of an input signal ?0 occur in a frequency spectrum. An output stage of a multiplier is used in order to separate an output n?0 frequency and to suppress adjacent frequencies. In order to tune the output stage to the n?0 frequency, a tuning plug (8) and short-circuiting pistons (13) are used. The tuning plug (8) is arranged above an upper electrod of the IMPATT diode (4) (inside the axis of the diode). The tuning plugs (13) make it possible to tune resonance capacitance to the n?0 frequency and remove energy towards the output part of a T-bend in which a wave guide pass-band filter (15) is disposed.

Abstract: A microwave frequency device includes: a first substrate having a dielectric layer and a conductive film disposed on opposing first and second sides of the dielectric layer, the conductive film on the first side of the dielectric layer of the first substrate including at least one signal line; and a second substrate having a dielectric layer, conductive film disposed on at least one of first and second opposing sides of the dielectric layer, and at least one cut-out where the dielectric layer and conductive film have been removed, wherein the first and second substrates are bonded together to form a bonded assembly such that (i) a portion of the signal line of the first substrate is sandwiched between the dielectric layers of the first and second substrates, and (ii) the at least one cut-out exposes a portion of the signal line, thereby forming a microstrip portion. A method of forming same is also disclosed.

Abstract: A ferromagnetic film, which has an inherent resonant frequency, is disposed in a cavity resonator. An electromagnetic wave, which has an input frequency equal to the resonant frequency of the ferromagnetic film, is introduced to the ferromagnetic film from an orifice of the cavity resonator to generate a ferromagnetic resonance in the ferromagnetic film, and thus, multiply the input frequency of the electromagnetic wave.

Abstract: The present invention provides an electromechanical band-pass filter for use in PIRM memory arrays utilizing miniature micro-movers on a single substrate. The band-pass filter includes first and second masses, each mass being independently movable in a common direction relative to the substrate and to other mass. A first spring element has one end attached to the substrate and the other end attached to the first mass. A second spring element has one end attached to the first mass and the other end attached to the second mass. An input transducer is provided for receiving an input frequency and applying a force to the first mass in the direction of motion of the first mass, the force being representative of the input frequency. An output transducer is associated with the first and second masses for providing an output frequency representative of the relative motion between the first and second masses.

Abstract: A damping resistance 20 is connected between the drain D of an FET 10 and a first end T3 of an output transmission line 13, and a damping resistance 21 is connected between the drain D of an FET 11 and the first end T3. The source of the FET 10 and the gate of the FET 11 are connected to a ground plane on the back surface of a substrate through a via which has a parasitic inductance when a multiplied frequency exceeds 20 GHz. The gate of the FET 10 and the source of the FET 11 receive microwaves of the same frequency and phase through an input transmission line 12.

Abstract: The present invention provides an electromechanical band-pass filter for use in PIRM memory arrays. The system of the present invention utilizes electrostatically coupled micro-resonators as filters, implementing micro electromechanical systems (MEMS) technology in which large numbers of miniature micro-movers are fabricated on a single substrate. The system of the present invention provides a narrow band-pass filter having a sharp frequency roll-off, typically 40 db per decade, and very high impedance that can be implemented in a simple, low temperature, inexpensive process not involving integrated circuitry. An electronically-coupled, mechanical band-pass filter fabricated on a substrate includes first and second masses, each mass being independently movable in a common direction relative to the substrate and to other mass. A first spring element has one end attached to the substrate and the other end attached to the first mass.

Abstract: A circuit with non-radiative dielectric waveguides held between two parallel metal plates which are multi-layered. Since the circuit has different heights of spacers between the plates owing to multiple layers, different sizes of non-radiative dielectric waveguides that are designed according to their using frequencies, are all inserted into a single circuit. By use of the present invention, we are capable of constructing a super-heterodyne receiver, which has the characteristic of mixing received waves through a local oscillator to produce an intermediate frequency. With the intermediate frequency, it is a lot easier to enhance amplitude and consequently reception sensitivity is improved.

Abstract: A branching section provides a fundamental input wave signal SI of a frequency f to the gate of a FET 15A having a grounded source and the source of a FET 15B having an AC grounded gate, and a signal joining section synthesizes the output signals of the FETs 15A and 15B. An open stub 24 as an amplitude attenuating element is connected to a transmission line 19B of the signal joining section. The length of the open stub 24 is not an integral multiple of &lgr;/4, where &lgr; denotes the wavelength of the fundamental signal SI, and adjusted in simulation such that an amplitude difference between second harmonics included in the drain voltage signals SD1 and SD2 of the respective FETs 15A and 15B is reduced to almost zero. Although the open stub 24 itself is a phase compensating element, since the transfer characteristic of the FET 15B changes by connecting the open stub 24 to the transmission line 19B, the open stub 24 works as an amplitude attenuating element.

Abstract: A ferromagnetic film, which has an inherent resonant frequency, is disposed in a cavity resonator. An electromagnetic wave, which has an input frequency equal to the resonant frequency of the ferromagnetic film, is introduced to the ferromagnetic film from an orifice of the cavity resonator to generate a ferromagnetic resonance in the ferromagnetic film, and thus, multiply the input frequency of the electromagnetic wave.

Abstract: This invention provides a multistage frequency multiplier having a plurality of frequency doublers. Each doubler incorporates a three-terminal transistor device and is connected to an adjacent doubler via an interstage network. The network comprises a transmission line having its electrical parameters selected to achieve conjugate impedance matching at the intermediate harmonic frequency generated by the corresponding doubler. This network also includes a quarter-wavelength open-ended stub for suppressing a main input frequency component received by the corresponding frequency doubler. A shunt resistor on the transistor gate is preferably used to stabilize the network. This interstage network simplifies overall circuit topology to reduce total circuit size, and provides increased drive power levels to permit broader bandwidth and stabilize required output level from a local oscillator.

Abstract: A high frequency signal source module includes a housing have a high-Q dielectric puck and a transition enclosure employing an antipodal finline transition. A circuit module connected to the high-Q puck includes an oscillator circuit that cooperates with the high-Q puck, and a frequency doubling circuit. In turn, the output of the frequency doubler is coupled to the antipodal finline transition, and thence to the output standard rectangular waveguide.

Abstract: One end of a first transmission line is connected to the collector of an HBT with the base connected to an output terminal of an input-side matching circuit and with the emitter grounded, and one end of an end-open stub for blocking the passage of the doubled wave is connected to the other end of the first transmission line. One end of a second transmission line is connected to the other end of the first transmission line, and one end of an end-open stub for blocking the passage of the fundamental wave is connected to the other end of the second transmission line. An input terminal of an output-side matching circuit is connected to the other end of the second transmission line.

Abstract: A branching section provides a fundamental input wave signal SI of a frequency f to the gate of a FET 15A having a grounded source and the source of a FET 15B having an AC grounded gate, and a signal joining section synthesizes the output signals of the FETs 15A and 15B. An open stub 24 as an amplitude attenuating element is connected to a transmission line 19B of the signal joining section. The length of the open stub 24 is not an integral multiply of &lgr;/4, where &lgr; denotes the wavelength of the fundamental signal SI, and adjusted in simulation such that an amplitude difference between second harmonics included in the drain voltage signals SD1 and SD2 of the respective FETs 15A and 15B is reduced to almost zero. Although the open stub 24 itself is a phase compensating element, since the transfer characteristic of the FET 15B changes by connecting the open stub 24 to the transmission line 19B, the open stub 24 works as an amplitude attenuating element.

Abstract: A microwave amplifier includes a bias circuit including a micro-strip line and a capacitor for biasing an output line of a FET with a DC voltage, and a filter block implemented by a low-pass-filter or a band-rejection-filter and a capacitor serially connected between the output line and the ground. The filter block passes a beat frequency generated by two of the carrier signals included in the input signal of the FET while maintaining the carrier signals on the output line.

Abstract: A switched frequency multiplier receives pulses of pump energy as an input signal. The input signal is transferred to within a housing having a first cavity tuned to the frequency of the pump signal and a second cavity which is tuned to a harmonic of the input signal and is enclosed within the first cavity. An outlet port couples the second tuned cavity to a waveguide which includes a Q-switch that can be turned on and off. The interior of the housing has a planar grid of layers which includes a layer of nonlinear material and a frequency selective layer. The frequency selective layer is transparent to the input signal but reflective to the harmonic output signal thereby trapping energy in the second cavity. The multiplier operates by receiving a pump pulse and storing the energy while the Q-switch is closed. When the Q-switch is opened near the end of the pump pulse, the stored energy is suddenly released to produce a relatively high energy harmonic pulse having a shorter duration than the pump pulse.

Abstract: A Q-switched parametric cavity microwave amplifier has input and output ports for receiving an input signal and producing a switched amplified output signal. A pump signal, preferably at a harmonic of the input signal, is received through a pump signal port and provided to a pump signal cavity within a housing. The pump signal interacts with a non-linear medium to produce carriers. A frequency selective layer reflects the pump signal but permits the input signal to pass therethrough. The input signal interacts with the carriers produced in the non-linear medium to enhance the signal present within the resonant cavity for the input signal. This transfers energy from the pump signal to the lower frequency input signal. A Q-switch is positioned in series with the output waveguide to cause energy to be stored within the input signal cavity. When the Q-switch is opened, a pulse is produced representing an amplified version of the input signal.

Abstract: In a dielectric transmission line device and a radio device using a dielectric transmission line device, an output matching circuit is constructed in a simplified fashion and an output signal of a frequency multiplier is output via a dielectric transmission line. The frequency multiplier is constructed in a small form in the dielectric transmission line device so as to obtain a dielectric transmission line device with a small total size and also obtain a small-sized high-efficiency radio device using such a dielectric transmission line device as a transmission line for transmitting a transmission signal. An input matching circuit is disposed between an input terminal and an FET for generating a harmonic. An open-ended transmission line is also provided which is coupled with an electromagnetic field of a dielectric transmission line in the form of a dielectric strip.

Abstract: One end of a first transmission line is connected to the collector of an HBT with the base connected to an output terminal of an input-side matching circuit and with the emitter grounded, and one end of an end-open stub for blocking the passage of the doubled wave is connected to the other end of the first transmission line. One end of a second transmission line is connected to the other end of the first transmission line, and one end of an end-open stub for blocking the passage of the fundamental wave is connected to the other end of the second transmission line. An input terminal of an output-side matching circuit is connected to the other end of the second transmission line.

Abstract: A phase shifter/modulator which provides linear phase control of a microwave continuous wave carrier signal. Linear phase shift range in excess of 360 degrees is provided as a result of linear variation in control voltage. A reference signal, at a subharmonic of the output carrier signal frequency, is injected into a highly linear fractional range reflection type phase shifter. This fractional phase modulated signal is input to a field effect transistor (FET) based frequency/phase multiplier. The frequency/phase multiplier translates the subharmonic reference signal to the desired output carrier frequency with the full 360 degree phase shift range imposed on the output carrier signal.

Abstract: A mixer circuit (230) comprises a double balanced mixer (370) including a first pair of transistors (Q3, Q4) and a second pair of transistors (Q5, Q6) and a differential amplifier (330) including a pair of transistors (Q1, Q2) coupled to a first reference voltage (302). A coupling element (C3) is inserted between a common emitter node (391) of the first pair of transistors (Q3, Q4) of the double balanced mixer (370) and the output node of one of the pair of transistors (Q1) of the RF input stage (330), and a coupling element (C4) is inserted between a common emitter node (392) of the second pair of transistors (Q5, Q6) of the double balanced mixer (370) and the output node of the other pair of transistors (Q2) of the differential amplifier (330).

Abstract: A frequency multiplier is constructed to input an input signal to a transistor through an input matching circuit and to output a multiplied output signal from the transistor through a reflecting type fundamental wave signal band suppressing circuit and an output matching circuit. A transmission line produces a standing wave and is disposed between the output terminal of the transistor and the input terminal of the reflecting type fundamental wave signal band suppressing circuit. Because the voltage acting on the output terminal of the transistor consequently increases, the transistor operates at a point at which the nonlinearity of its input-output characteristic is greater and the output power of the multiplied output signal increases.

Abstract: The broadband microwave frequency shifter is an electro-optical device that accomplishes frequency shifting, or translation by the use of serrodyning or mixing techniques. A first optical signal is modulated with the radio frequency signal desired to be translated and processed to produce an upconverted lower sideband optical signal. A second optical signal is frequency shifted using an optical phase shifter utilizing serrodyning techniques or by offset phase locking it to another optical signal. When the frequency shifted optical signal is combined with the upconverted optical signal and converted to an output radio frequency signal thereby producing an output microwave signal that duplicates the input microwave signal in all aspects except that its center frequency has been shifted.

Abstract: A high frequency video isolation circuit comprising: a modulating signal source for producing a modulating signal having a frequency of several hundred megahertz; an input multiplier for multiplying the modulating signal with an input video signal having frequency components in a frequency range from about several hertz to about one hundred or more megahertz, to produce a modulated video signal having frequency components in a frequency range from about one hundred megahertz to about several hundred megahertz; a first isolation transformer having an input and an output, for transforming the modulated video signal from the input to the output; and an output multiplier for multiplying the transformed modulated video signal with the modulating signal to produce an isolated output video signal having the frequency components of the input video signal.

Abstract: An odd order MESFET frequency multiplier which outputs a desired odd harmonic of a fundamental tone. The frequency multiplier includes a multiplier stage with a MESFET having a harmonic response dependent upon a plurality of bias conditions and the input RF power level. The MESFET includes a drain port coupled to an output matching network sized and configured for a predetermined load at a selected output frequency. The output matching network includes RF shorts for reflecting energy to the MESFET from a plurality of undesired even harmonics. Coupled to the output matching circuit is a bandpass filter sized and configured for the predetermined load. The bandpass filter includes RF shorts for reflecting energy to the MESFET from a plurality of undesired odd harmonics, wherein the reflected energy from the undesired even harmonics and the undesired odd harmonics are combined at the MESFET to provide additional energy at the desired odd harmonic.

Abstract: A high frequency signal generator using a superconducting quantum interference device is disclosed including: a magnetic signal generator for supplying a low frequency magnetic signal to a superconducting quantum interference device; a first filter for selectively supplying only the magnetic signal to the superconducting quantum interference device, and preventing a high frequency signal generated from the superconducting quantum interference device from flowing to the magnetic signal generator; the superconducting quantum interference device for frequency-multiplying the magnetic signal generated from the first filter to the high frequency signal of a sinusoidal wave according to the frequency, waveform and amplitude of the magnetic signal; a second filter for preventing the magnetic signal generated from the magnetic signal generator from flowing to a high frequency guide and antenna, and selectively supplying only the high frequency signal generated from the superconducting quantum interference device to t

Abstract: A four terminal multiplication circuit capable of mixing up to three input signals. The circuit includes a MOS transistor having gate, source, drain and back-gate terminals. When the circuit is used as an RF mixer or downconverter, an RF signal is provided to the gate terminal and a local oscillator signal is provided to the back-gate terminal. A DC voltage is applied to the source terminal for biasing the transistor and the mixed/downconverted output (IF) signal is obtained from the drain terminal. A single balanced and a double balanced mixer circuit are also disclosed. In the single balanced circuit, two MOS transistors are used; the RF signal is applied to the gate terminals with the positive phase LO component applied to one back-gate terminal and the negative phase local oscillator (LO) component applied to the other back-gate terminal for producing a positive phase and a negative phase IF signal.

Abstract: A microwave signal frequency multiplier is used to produce a harmonic signal derived from a microwave pump signal. In a selected embodiment, a Ka pump signal is converted to a W band microwave signal. The frequency signal multiplier includes a housing having a signal input port and a harmonic signal extraction port. The interior of the housing comprises a pump signal cavity which is tuned to the pump signal. Within the pump signal cavity, there is provided a non-linear material which converts the pump signal to a harmonic, preferably a third harmonic, of the pump signal. A frequency selective barrier within the pump signal cavity defines a harmonic signal cavity. An extraction port is coupled to the harmonic signal cavity for removing the harmonic signal from the multiplier. The frequency selective barrier is essentially transparent to the pump signal but is reflective to the harmonic signal.

Abstract: A frequency multiplier in which one or more varactors each include arrays of Schottky barrier diodes combined in rows of parallel-connected diodes and columns of series-connected diodes. The arrays are dispersed on a thermal substrate, or confined to a GaAs strip guide on a suitable substrate and in either case employed in various discrete-component or integrated circuit transmissions systems. These series-parallel arrays can be increased in size as desired for power handling capabilities or thermal dissipation and provide readily selectable impedance levels and breakdown voltages. These properties make the frequency multipliers useful in microwave and millimeter-wave systems, including those requiring high-power transmitters.

Abstract: A multi-channel carrier wave generator includes a signal source capable of generating a carrier wave having a frequency, a first input-match diode circuit receiving the carrier wave to correspondingly generate a plurality of harmonic waves, a first multi-way power divider electrically connected to the first input-match diode circuit to equally divide the harmonic waves, and a first multi-way filter electrically connected to the first multiple power divider to filter through the harmonic waves. Such a multi-channel carrier wave generator has the advantages of having a simple fabrication procedure, a low cost, and a low phase noise, and capable of providing a stable carrier wave and a good filtering result and of using a lower order bandpass filter.

Abstract: An integrated varactor diode frequency multiplier assembly including a first varactor diode frequency multiplier circuit having a non-stepped waveguide output, a second varactor diode frequency multiplier circuit having a non-stepped waveguide input and a non-stepped waveguide for integrally connecting the output of the first circuit to the input of the second circuit, wherein the impedance level of the input of the second circuit is similar to the impedance level of the output of the first circuit.

Abstract: The invention provides frequency multiplier circuitry which may be used in the output section of high power microwave systems to efficiently provide higher output frequencies. Generally, one multiplier stage may be utilized to double the frequency of the input signal with several stages being cascaded to achieve even higher frequencies. The varactor diodes utilized in circuits of the invention are preferably constructed primarily of silicon carbide, which has many advantages when compared with current varactors constructed of GaAs or silicon. Some presently preferred embodiments utilize a four terminal varactor bridge instead of a single varactor diode. The invention also teaches several significant techniques for improving the bandwidth of the circuitry, thus allowing variation of the frequency of the input signal without significantly attenuating the output signal.