Abstract: Exposure apparatus exposes a substrate by irradiating the substrate with exposure light via a projection optical system and a liquid. The exposure apparatus is provided with a liquid immersion mechanism for supplying the liquid and recovering the liquid. The liquid immersion mechanism has an inclined surface, which is opposite to a surface of the substrate and is inclined with respect to the surface of the substrate, and a liquid recovering port of the liquid immersion mechanism is formed in the inclined surface. A flat portion is provided between the substrate and the projection optical system. A liquid immersion area can be maintained to be small.

Abstract: A normally opaque waveguide interacting with a drop-filter cavity can be switched to a transparent state when the drop filter is also coupled to a dipole. This dipole induced transparency may be obtained even when the vacuum Rabi frequency of the dipole is much less than the cavity decay rate. The condition for transparency is a large Purcell factor. Dipole induced transparency can be used in quantum repeaters for long distance quantum communication.

Abstract: The present invention relates to a nonvolatile semiconductor memory, that is, a flash memory and especially to a NAND type flash memory device capable of selectively controlling data input/output units by an address control. In the NAND type flash memory device, a memory cell array is divided into a plurality of blocks, and a data input/output path is selectively controlled by a predetermined data rate option and introduced addresses to perform data input/output operations at a ×8 or ×16 speed in one chip.

Abstract: There is provided a semiconductor memory device in which a bit line precharge operation is increased in speed, and a layout area is reduced. P-channel transistors (206, 207) that function as switches are provided in a precharge voltage pumping circuit (105) included in a bit line precharge voltage generation unit. This enhances a pumping efficiency, and reduces a capacitance area of a pumping capacitor (200).

Abstract: A module array includes a lead-in transmission line from a driving source. The lead-in transmission line ends with a series impedance between the lead-in transmission line and a star node. The star node has a terminating impedance between it and a termination voltage. At least two branch transmission lines diverge from the star node. Modules connect to the branch transmission lines in a comb topology.

Abstract: A magnetic bubble domain structure comprising a bubble domain layer supported by a nonmagnetic substrate. A control layer is superimposed on the major surface of the domain layer which remote from the substrate. The control layer has an easy axis of magnetization in the plane which defines at least one bubble domain propagation path. The unique control layer according to the invention may be a garnet layer which comprises two sublayers: a first, continuous, sublayer, and a second, discontinuous, sublayer. The discontinuous sublayer defines the required propagation patterns. An advantage of the invention is that the in-plane rotary field to be applied for propagating the bubble domains can be considerably weaker than in bubble domain structures which are equipped with nickel-iron propagation patterns.

Abstract: A magnetic bubble memory chip is arranged in such a way that the major surface of the chip will not cross perpendicularly with the external bias magnetic field to generate a component of the bias magnetic field which is parallel to the major surface. This component is added to the rotating magnetic field within the chip major surface and the intensity of a resultant rotating magnetic field is shifted to the start/stop direction of this rotating magnetic field. Of the basic elements incorporated in the chip, the basic elements which operate stably in a comparatively intense rotating field is operated in synchronism with the phase of the start/stop direction of the rotating magnetic field in order to ensure stable operation of all the basic elements under the decreased intensity of the external rotating magnetic field.

Abstract: These improved current controlled transfer switches are particularly useful for changing the propagation path of very small bubble domains without requiring large amounts of transfer current. The underlying principle is that the transfer operation occurs when the magnitude of the magnetic drive field used to move bubble domains has diminished to a small value, or is zero. This means that the magnetic field due to current in the switch does not have to overcome the effect of the drive field and therefore can be very small while still being effective. This is termed a "start/stop" operation and in one embodiment, current-assisted transfer is achieved by utilizing a change in the sequence of the magnetic drive field (generally an in-plane rotating field) at the time of transfer. In another embodiment, a continuous "three-quadrant" magnetic drive field is used instead of the customary 360.degree. rotating drive field.

Abstract: A method for detecting the wall state of a soft bubble based upon the collapse characteristics of the bubble domain on a layer of bubble domain supporting material is described. The method includes the step of exchange coupling a magnetic layer, for example, an ion-implanted layer, to the bubble supporting layer. An in-plane field is applied to the bubble supporting layer when Bloch lines are present in the bubble domains. The bias field and the pulse field are set at a level to form a range of pulse widths which are suitable for the discrimination of soft bubble domains having different wall states. A pulse is then applied for a time sufficient to collapse only the S=1 bubble and not the S=0 bubble. Thereby this method distinguishes S=0 bubbles having one pair of winding Bloch lines from S=1 bubbles having one pair of unwinding Bloch lines. This method also distinguishes S=1 bubbles having a clockwise chirality from S=1 bubbles having a counterclockwise chirality.

Abstract: A field access magnetic bubble memory device including a memory chip applied with an in-plane magnetic field at need is disclosed. At a transient stop operation of the device before its interrupted state, an in-plane field is removed after it has been held for a predetermined period following the cessation of rotation thereof. The in-plane field may be increased upon the cessation of rotation thereof. At a transient start operation of the device after the interrupted state, an in-plane field having no rotation and the same direction as at the transient stop operation is applied for a predetermined period before the initiation of rotation thereof. The applied in-plane field may be increased upon the initiation of rotation thereof.

Abstract: A magnetic bubble domain structure and method of making comprising a film of a nickel-iron alloy of 80 to 83.5% nickel content and substantially zero constant of magnetostriction formed by vapor deposition of the alloy onto a flat substrate at a substrate temperature in the range of room temperature to 200.degree. C. at an angle of incidence of approximately 60.degree. to a film thickness of 0.2.mu.m to 3.0.mu.m, the film being immersed in a magnetic field perpendicular to the film and of 1600 to 2400 oersteds intensity.

Abstract: A laminated, integral structure that forms a bubble memory plane for the generation, storage and transfer of single wall domains, bubble domains or bubbles is disclosed. The memory plane is formed of a non-magnetic gadolinium gallium garnet (GGG) support member; formed upon the support member is a magnetizable layer that is capable of sustaining stripe domains; formed upon the stripe domain layer is a non-magnetic gadolinium gallium garnet (GGG) spacer layer; and, formed upon the spacer layer is a magnetizable layer in which single wall domains or bubbles are capable of being generated, sustained and transferred from one position to another along a planar dimension of the bubble domain layer.

Abstract: Magnetic bubble domains are propagated in a magnetic medium in a desired direction using in-plane magnetic fields which are time varying but which have no spatial gradients. In applications such as information storage, the need for conventional propagation structures, such as offset conductor loops, patterned magnetic elements, and patterned ion implantation regions is reduced. Bubble domains having unwinding pairs of Bloch lines in their wall magnetization can be moved by applying appropriate in-plane magnetic fields, without the need for spatial gradients or variations in the magnetic field normal to the plane of the magnetic medium. The continuous movement of these bubble domains occurs by a cyclic process where the Bloch lines switch between two configurations, in an asymmetric way in response to the time varying in-plane field.

Abstract: An apparatus for and a method of propagating bubble domains is disclosed. The apparatus includes a memory plane that is comprised of a non-magnetic support member upon which are formed a bubble domain layer and at least one stripe domain layer. The stripe domain layer has a set of relatively-narrow, periodic, potential well generating fixed stripe domains provided therein while the bubble domain layer has a set of relatively-wide, parallel, potential well generating fixed guidance channels provided therein that are oriented orthogonal to the parallel set of stripe domains in the stripe domain layer. Bubble domains are concurrently entered, in parallel, at one end of the memory plane in selected ones of the guidance channels. A periodic amplitude modulated bias field of frequency F propagates each of the bubble domains along the associated guidance channel from adjacent to next downstream adjacent stripe domain and thus through the memory plane at the frequency F.

Abstract: Two parallel conductors are positioned on top of a magnetic layer where bubble domains are to be coded. The two parallel conductors are positioned to form a gap therebetween of a particular size. An external in-plane magnetic field is applied to the magnetic layer. The size of the gap is selected such that when current is simultaneously applied in both conductors, a local in-plane field will be formed in the gap which is sufficient for coding bubble wall states and a vertical field will be formed in the gap sufficient to retain a bubble in the gap during the application of current to the conductors. The application of current in the one direction in the conductors codes a bubble with one pair (S = 0) of Bloch lines and the application of current in the opposite direction codes a bubble with no Bloch lines (S = 1).

Abstract: A technique for controllably providing state conversions between bubble domains having a common winding number S is described. In particular, controlled conversions between bubble domains having winding number S=1 is achieved by the application of spatially invariant, homogeneous magnetic fields. For the conversion of .sigma. bubbles (having two vertical Bloch lines) to .chi. bubbles (having no vertical Bloch lines), an in-plane field is not required and only a time varying perpendicular z-field is used. For conversion of a .chi..sub.+ bubble to a .chi..sub.- bubble, and vice versa, a time varying field pulse is applied, there being no requirement for an in-plane magnetic field. However, for the conversion of .chi. bubbles to .sigma. bubbles, an in-plane field is used simultaneously with a time varying z-field. For all controlled conversions, the applied magnetic fields do not have spatial gradients.