Abstract: Disclosed is a nano dispersion copper alloy with high air-tightness and low free oxygen content and a brief manufacturing process thereof, wherein alloy comprises the following components: Al2O3, Ca and La. The manufacturing process comprises the following steps of: preparing Cu—Al2O3 alloy powder by an internal oxidation method; mixing the Cu—Al2O3 alloy powder with Cu—Ca—La alloy powder; sheathing the mixed powder under protection of argon; performing hot extrusion and then rotary forging; vacuumizing the sheath after the rotary forging; and sealing and placing the sheath in a nitrogen atmosphere with a temperature of 450° C. to 550° C. and a pressure intensity of 40 Mpa to 60 Mpa for 3 hours to 5 hours. The dispersion copper prepared by the present disclosure has the advantages of low free oxygen content (?15 ppm), high dimensional stability, good air-tightness and an air leakage rate?1.0×10?10 Pa m3/s after hydrogen annealing.

Abstract: Processes are provided that include providing a copper-manganese alloy containing copper and manganese and having an amount of manganese that is at least 32 weight percent and not more than 40 weight percent of a combined total amount of the copper and manganese in the copper-manganese alloy, and casting the copper-manganese alloy by multidirectional solidification to produce a product in the form of a casting. The copper-manganese alloy has a composition sufficiently near the congruent melting point of the Cu—Mn alloy system to sufficiently avoid dendritic growth during the multidirectional solidification of the copper-manganese alloy to avoid the formation of microporosity attributable to dendritic growth. The product has a cast microstructure having a cellular and/or planar solidification structure free of dendritic growth and having multidirectional columnar grains.

Abstract: Seizure resistance and wear resistance of Cu—Bi—In copper-alloy sliding material are enhanced by forming a soft phase of as pure as possible Bi. Mixed powder of Cu—In cuprous alloy powder and Cu—Bi containing Cu-based alloy powder is used. A sintering condition is set such that Bi moves outside particles of said Cu—Bi containing Cu-based powder and forms a Bi grain-boundary phase free of In, and In diffuses from said Cu—In containing Cu-based powder to said Cu—Bi containing Cu-based powder.

Abstract: A bearing surface of an oilfield component is treated by applying a surface treatment having a low coefficient of friction to the bearing surface of the oilfield component by weld fusing an overlay of a Cu—Ni—Sn alloy material to the bearing surface. Weld fusing the overlay of the Cu—Ni—Sn alloy material to the bearing surface can involve laser surface cladding the overlay of the Cu—Ni—Sn alloy material to the bearing surface, gas tungsten arc welding the overlay of the Cu—Ni—Sn alloy material to the bearing surface, or plasma tungsten arc welding the overlay of the Cu—Ni—Sn alloy material to the bearing surface.

Abstract: Disclosed is a copper alloy containing 1.0% to 3.6% of Ni, 0.2% to 1.0% of Si, 0.05% to 3.0% of Sn, 0.05% to 3.0% of Zn, with the remainder including copper and inevitable impurities. The copper alloy has an average grain size of 25 ?m or less and has a texture having an average area percentage of cube orientation of 20% to 60% and an average total area percentage of brass orientation, S orientation and copper orientation of 20% to 50%. The copper alloy has a KAM value of 0.8 to 3.0 and does not suffer from cracking even when subjected to U-bending. The copper alloy has excellent balance between strengths (particularly yield strength in a direction perpendicular to the rolling direction) and bending workability.

Abstract: A high strength and high conductivity copper rod or wire includes Co of 0.12 to 0.32 mass %, P of 0.042 to 0.095 mass %, Sn of 0.005 to 0.70 mass %, and O of 0.00005 to 0.0050 mass %. A relationship of 3.0?([Co]?0.007)/([P]?0.008)?6.2 is satisfied between a content [Co] mass % of Co and a content [P] mass % of P. The remainder includes Cu and inevitable impurities, and the rod or wire is produced by a process including a continuous casting and rolling process. Strength and conductivity of the high strength and high conductivity copper rod or wire are improved by uniform precipitation of a compound of Co and P and by solid solution of Sn. The high strength and high conductivity copper rod or wire is produced by the continuous casting and rolling process, and thus production costs are reduced.

Abstract: A copper alloy conductor has a copper alloy material which has a copper parent material with 0.001 to 0.1 wt % (=10 to 1000 wt·ppm) of oxygen and 0.15 to 0.70 wt % (exclusive of 0.15 wt %) of Sn. A crystalline grain to form a crystalline structure of the copper alloy material has an average diameter of 100 ?m or less, and 80% or more of an oxide of the Sn is dispersed in a matrix of the crystalline structure as a fine oxide grain with an average diameter of 1 ?m or less.

Abstract: A coated article system includes a substrate and a surface coating on the substrate. The surface coating is formed by depositing individual particles of a composite metal powder with sufficient energy to cause the composite metal powder to bond with the substrate and form the surface coating. The composite metal powder includes a substantially homogeneous dispersion of molybdenum and molybdenum disulfide sub-particles that are fused together to form the individual particles of the composite metal powder.

Abstract: To provide a metal wire and an electric wire of high mechanical strength and high ductibility that have sufficiently increased ductibility as well as sufficiently increased mechanical strength. A metal wire manufactured at least by being subjected to an extension in which a metal wire is extended in an axial direction, and having a hardness distribution in which hardness decreases toward a specific peripheral portion from a central portion in a cross-section orthogonal to axis, whereby a softened peripheral portion becomes to show a good malleability as well as a high resistance to cracking, so as to attain an improvement of mechanical strength and ductibility.

Abstract: Disclosed herein are near field transducers (NFTs) that include either silver, copper, or aluminum and one or more secondary elements.

Abstract: Provided is a copper alloy sheet excellent in strengths, electroconductivity, and bending workability. The copper alloy contains Cr of 0.10% to 0.50%, Ti of 0.010% to 0.30%, and Si of 0.01% to 0.10%, where a ratio (in mass) of the Cr content to the Ti content is from 1.0 to 30, a ratio (in mass) of the Cr content to the Si content is from 3.0 to 30, with the remainder including copper and inevitable impurities. The copper alloy includes grains that have an average major axis length of 6.0 ?m or less and an average minor axis length of 1.0 ?m or less as measured on a microstructure of the copper alloy in a plane surface perpendicular to a transverse direction by FESEM-EBSP analysis.

Abstract: A bronze alloy includes copper, tin, bismuth, nickel and sulfur and a metal structure of the bronze alloy has an eutectoid phase including ?-copper having a lamellar structure including a flaky copper-tin intermetallic compound precipitated and metal particles including the bismuth dispersedly precipitated therein.

Abstract: Provided is a copper-based sliding material including a steel back-metal layer and a Cu alloy layer. The Cu alloy layer contains, by mass %, 10 to 30% of Bi, 0.5 to 5% of an inorganic compound, and the balance being Cu and inevitable impurities. The Cu alloy layer may further contain 0.5 to 5% of Sn and/or at least one element selected from the group consisting of Ni, Fe, P and Ag in a total amount of 0.1 to 10%. The inorganic compound has an average particle size of 1 to 5 ?m and a specific gravity of 70 to 130% relative to the specific gravity of Bi. Bi phase is formed in the Cu alloy layer in an average particle size of 2 to 15 ?m, and the Bi phase is dispersed in the Cu alloy layer and isotropic.

Abstract: [Technical Problem] The invention is to provide a method for manufacture of an ultrafine conductor having sufficient electrical conductivity, and enhanced strength and stretch properties while suppressing manufacture cost, the same ultrafine conductor, as well as a material suited for the same ultrafine conductor. [Solution to Problem] To solve the above problem, there is provided a material for an ultrafine conductor, which includes a matrix formed of copper, chromium particles contained in the matrix, and tin contained in the matrix. The tin is present as a solid solution in the matrix.

Abstract: This copper alloy with high strength and high electrical conductivity includes: Mg: more than 1.0% by mass to less than 4% by mass; and Sn: more than 0.1% by mass to less than 5% by mass, with a remainder including Cu and inevitable impurities, wherein a mass ratio Mg/Sn of a content of Mg to a content of Sn is in a range of 0.4 or more. This copper alloy with high strength and high electrical conductivity may further include Ni: more than 0.1% by mass to less than 7% by mass.

Abstract: A copper alloy material, having an alloy composition containing any one or both of Ni and Co in an amount of 0.4 to 5.0 mass % in total, and Si in an amount of 0.1 to 1.5 mass %, with the balance being copper and unavoidable impurities, wherein a ratio of an area of grains in which an angle of orientation deviated from S-orientation {2 3 1}<3 4 6> is within 30° is 60 % or more, according to a crystal orientation analysis in EBSD measurement; an electrical or electronic part formed by working the copper alloy material; and a method of producing the copper alloy material.

Abstract: Provided is a copper alloy plate that is for an FPC substrate and that has superior heat dissipation, repeated bending workability, shape retaining properties, and heat resistance. The copper alloy plate contains at least 0.01 mass % of the total of at least one element selected from the group consisting of Ag, Cr, Fe, In, Ni, P, Si, Sn, Ti, Zn, and Zr, contains no more than 1.0 mass % of Ag, no more than 0.08 mass % of Ti, no more than 2.0 mass % of Ni, no more than 3.5 mass % of Zn, and no more than 0.5 mass % of Cr, Fe, In, P, Si, Sn, and Zr by the total of the at least one element selected from the group, the remainder comprising Cu and impurities, has a conductivity of at least 60% IACS, has a tensile strength of at least 350 MPa, and has I(311)/IO(311) determined by X-ray diffraction in the thickness direction of the plate surface that satisfies the formula I(311)/IO(311)?0.5.

Abstract: A copper alloy includes Si to facilitate deoxidation, and can be easily manufactured even when including elements such as Cr or Sn. The copper alloy has high conductivity and high workability without negatively affecting the tensile strength. The copper alloy contains 0.2 to 0.4 wt % of Cr, 0.05 to 0.15 wt % of Sn, 0.05 to 0.15 wt % of Zn, 0.01 to 0.30 wt % of Mg, 0.03 to 0.07 wt % of Si, with the remainder being Cu and inevitable impurities. A method for manufacturing the copper alloy includes obtaining a molten metal having the described composition; obtaining an ingot; heating the ingot at a temperature of 900-1000° C. to perform a hot rolling process; cold rolling; performing a first aging process at a temperature of 400-500° C. for 2 to 8 hours; cold rolling; and performing a second aging process at a temperature of 370-450° C. for 2 to 8 hours.

Abstract: Cu—Co—Si-based alloy strip, which has not only an excellent balance between strength and electrical conductivity but also suppressed hanging curl, is provided. The copper alloy strip for electronic materials comprises 0.5-2.5 mass % of Co, 0.1-0.7 mass % of Si, the balance Cu and inevitable impurities, wherein, from a result obtained from measurement of an X ray diffraction pole figure, using a rolled surface as a reference plane, the following (a) is satisfied. (a) A diffraction peak height at ? angle 120° among diffraction peak intensities by ? scanning at ?=25° in a {200} pole figure is at least 10 times that of standard copper powder.

Abstract: A Cu—Si—Co-based alloy having an enhanced spring limit is provided. The copper alloy comprises 0.5-2.5 mass % of Co, 0.1-0.7 mass % of Si, the balance Cu and inevitable impurities, wherein, from a result obtained from measurement of an X ray diffraction pole figure, using a rolled surface as a reference plane, a peak height at ? angle of 90° among diffraction peaks in {111} Cu plane with respect to {200} Cu plane by ? scanning at ?=35° is at least 2.5 times that of a standard copper powder.

Abstract: A pressure resistant and corrosion resistant copper alloy contains 73.0 mass % to 79.5 mass % of Cu and 2.5 mass % to 4.0 mass % of Si with a remainder composed of Zn and inevitable impurities, in which the content of Cu [Cu] mass % and the content of Si [Si] mass % have a relationship of 62.0?[Cu]?3.6×[Si]?67.5. In addition, the area fraction of the ? phase “?”%, the area fraction of a ? phase “?”%, the area fraction of a ? phase “?”%, the area fraction of the ? phase “?”%, and the area fraction of a ? phase “?”% satisfy 30?“?”?84, 15?“?”?68, “?”+“?”?92, 0.2?“?”/“?”?2, “?”?3, “?”?5, “?”+“?”?6, 0?“?”?7, and 0?“?”+“?”+“?”?8. Also disclosed is a method of manufacturing a brazed structure made of the above pressure resistant and corrosion resistant copper alloy.

Abstract: In the copper-alloy-based sliding material, alloy steel particles containing fine carbides are dispersed in a range of 1 to 20 wt % of the total weight into a Cu-based matrix containing 5 to 15 wt % of Sn, and the copper-alloy-based sliding material has a Vickers hardness in a range of 44 to 148 as a macro hardness.

Abstract: To provide a copper alloy sheet excellent in the balance of strength and electroconductivity and excellent in the balance of strength and bending workability also. A copper alloy contains predetermined amount of Cr, Ti, and Si so as to satisfy a mass ratio of the Cr to the Ti: 1.0?(Cr/Ti)?30, and a mass ratio of the Cr to the Si: 3.0?(Cr/Si)?30, the remainder including copper and unavoidable impurities, in which 70% or more out of total amount of Cr, Ti and Si contained in the copper alloy is precipitated, a number of piece of precipitates with 300 nm or more circle equivalent diameter observed by a SEM in a region of 25 ?m in the thickness direction from the surface of the copper alloy×40 ?m in the cross-sectional direction in a cross section in the width direction of the copper alloy is 50 pieces or less, and an average circle equivalent diameter of precipitates with less than 300 nm circle equivalent diameter observed by a TEM on the surface of the copper alloy is 15 nm or less.

Abstract: Disclosed is a copper-cobalt-silicon (Cu—Co—Si) alloy for electronic material with an improved balance among electro-conductivity, strength and bend formability, which includes 0.5 to 3.0% by mass of Co, 0.1 to 1.0% by mass of Si, and the balance of Cu and inevitable impurities, having a ratio of mass percentages of Co and Si (Co/Si) given as 3.5?Co/Si?5.0, having an average particle size of second phase particles, within the range of the particle size of 1 to 50 m seen in a cross-section taken in parallel with the direction of rolling, of 2 to 10 nm, and having an average distance between the adjacent second phase particles of 10 to 50 nm.

Abstract: An ingot includes at least two metals selected from copper, tin, zinc and bismuth, wherein: (a) the ingot is a mechanical ingot, the at least two metals are 40-95 wt. % copper, 3-80 wt. % tin, 1-40 wt. % bismuth and/or 1-80 wt. % zinc, and other metals are present in a collective amount of 0-2 wt. %; or (b) the ingot is a cast ingot, the at least two metals are 40-80 wt. % copper, 3-80 wt. % tin, 1-40 wt. % bismuth and/or 1-80 wt. % zinc, and other metals are present in a collective amount of 0-2 wt. %, provided that when copper is present in the cast ingot in an amount greater than 69 wt. %, zinc is present in an amount less than 30 wt. %. Methods for preparing and casting the ingot are also disclosed, as is a system for casting a copper-bismuth alloy.

Abstract: This copper alloy with high strength and high electrical conductivity includes: Mg: more than 1.0% by mass to less than 4% by mass; and Sn: more than 0.1% by mass to less than 5% by mass, with a remainder including Cu and inevitable impurities, wherein a mass ratio Mg/Sn of a content of Mg to a content of Sn is in a range of 0.4 or more. This copper alloy with high strength and high electrical conductivity may further include Ni: more than 0.1% by mass to less than 7% by mass.

Abstract: A first copper alloy sputtering target comprising 0.5 to 4.0 wt % of Al and 0.5 wtppm or less of Si and a second copper alloy sputtering target comprising 0.5 to 4.0 wt % of Sn and 0.5 wtppm or less of Mn are disclosed. The first and/or the second alloy sputtering target can further comprise one or more elements selected from among Sb, Zr, Ti, Cr, Ag, Au, Cd, In and As in a total amount of 1.0 wtppm or less. A semiconductor element wiring formed by the use of the above targets is also disclosed. The above copper alloy sputtering target allows the formation of a wiring material for a semiconductor element, in particular, a seed layer being stable, uniform and free from the occurrence of coagulation during electrolytic copper plating and exhibits excellent sputtering film formation characteristics.

Abstract: An alkaline battery includes a cathode, an alkaline electrolyte, and a copper-based anode which reduces hydrogen gassing without a protective coating or plating to less than 50% of the gas production observed using tin-plated 260 brass. An alloy for an anode which reduces hydrogen gassing without a protective coating or plating to less than 50% of the gas production observed using tin-plated 260 brass includes 0.01% to 9.0% tin, no more than 1% of phosphorus, no more than 1% of incidental elements and impurities, and the balance copper, in wt %. Another alloy for an anode which reduces hydrogen gassing without a protective coating or plating to less than 50% of the gas production observed using tin-plated 260 brass includes 1.0% to 40% zinc, about 0.01% to 5.0% tin, no more than 1% of phosphorus, no more than 1% of incidental elements and impurities, and the balance copper, in wt %.

Abstract: Sliding parts are made of Pb-free Cu-Bi based sintered material. The side in contact with a shaft is machined to a predetermined roughness. A number of Bi phases are present on the finished surface. Stable performance of Bi is to be exhibited. Machined sintered material covers a portion of the Bi phases. The ratio of the exposed surface area of the Bi phases is 0.5% or more relative to the area of the finished surface.

Abstract: A copper alloy material for electric/electronic parts, containing Co and Si as additive elements, wherein, a compound A is dispersed, which is composed of Co and Si and has an average particle diameter of 5 nm or more but less than 50 nm, and at least one compound is dispersed, which is selected from: a compound B which does not contain one or any of Co and Si and has an average particle diameter from 50 to 500 nm, a compound C which contains both of Co and Si and another element and has an average particle diameter from 50 to 500 nm, and a compound D which is composed of Co and Si and has an average particle diameter from 50 to 500 nm; a grain size of the copper alloy matrix is 3 to 35 ?m; and an electrical conductivity is 50% IACS or more.

Abstract: A copper alloy material for electric/electronic parts, containing Co in an amount of 0.7 to 2.5 mass % and Si in an amount that gives a mass ratio of Co and Si (Co/Si ratio) within the range from 3.5 to 4.0, with the balance being Cu and unavoidable impurities, wherein the grain size is 3 to 15 ?m.

Abstract: [Task] In the provided Cu-based sliding material, the properties equivalent to those of a Pb-containing material is attained even free of Pb, and material has stable friction coefficient. [Solution Means] A Pb-free copper-alloy sliding material contains 1.0 to 15.0% of Sn, 0.5 to 15.0% of Bi and 0.05 to 5.0% of Ag, and Ag and Bi from an Ag—Bi eutectic. If necessary, at least one of 0.1 to 5.0% of Ni, 0.02 to 0.2% P, and 0.5 to 30.0% of Zn is contained. Further, if necessary, 1.0 to 10.0 mass % of at least one of a group consisting of Fe3P, Fe2P, FeB, NiB and AlN, having an average particle diameter of 1.5 to 70 ?m is contained.

Abstract: An antifouling barrier comprising a silicon bronze alloy, the silicon bronze alloy comprising about 0.5% to about 3.8% silicon (wt/wt alloy) and greater than about 90% copper (wt/wt alloy). In some embodiments, the silicon bronze alloy additionally comprises from about 0.05% to about 1.3% manganese (wt/wt alloy). The antifouling barrier may be a welded wire mesh, screen, chain-link, chain-mail, grid, weave, perforated sheet, or chicken wire. Methods of reducing the growth of an organism on an animal enclosure, comprising contacting at least a portion of the animal enclosure with an antifouling barrier comprising a silicon bronze alloy comprising about 0.5% to about 3.8% silicon (wt/wt alloy) and greater than about 90% copper (wt/wt alloy).

Abstract: Seizure resistance and wear resistance of Cu—Bi—In copper-alloy sliding material are enhanced by forming a soft phase of as pure as possible Bi. Mixed powder of Cu—In cuprous alloy powder and Cu—Bi containing Cu-based alloy powder is used. A sintering condition is set such that Bi moves outside particles of said Cu—Bi containing Cu-based powder and forms a Bi grain-boundary phase free of In, and In diffuses from said Cu—In containing Cu-based powder to said Cu—Bi containing Cu-based powder.

Abstract: Equestrian bits are manufactured with the mouthpiece component comprising a copper alloy with composition; 65-80% by weight copper, 0-2% tin and the remainder being zinc including other elements. In a further embodiment, the copper alloy comprises 70-73% copper, 0.9-1.2% tin, 28% zinc the remainder being other elements at a %, by weight, of less than 1%. The alloy of the invention provides a horse bit mouthpiece which rapidly achieves thermal equilibration when placed in, or moved within, the mouth and has characteristic strength sufficient for the intended use.

Abstract: When a Cu—Sn—Bi had-particle based sliding material is used for sliding, Cu of Cu matrix flows and covers up Bi phase. Seizure resistance lowers as time passes. A Pb-free sliding material preventing the reduction of seizure resistance is provided. (1) Composition: from 1 to 15% of Sn, from 1 to 15% of Bi, from 0.02 to 0.2% of P, and from 1 to 10% of hard particles having an average diameter of from 50 to 70 ?m, with the balance being Cu and unavoidable impurities. (2) Structure: Bi phase and the hard particles are dispersed in the copper matrix, and all of said hard particles are bonded to the copper matrix.

Abstract: A copper-based alloy essentially includes 5.0 to 10.0 wt % of Zn, 2.8 to 5.0 wt % of Sn, 0.4 to 3.0 wt % of Bi, 0<Se?0.35 wt %, 0<P?0.5, one of 0<Sb?2.2 wt % and 0<Ni?4.8 wt %, and a balance of Cu and unavoidable impurities. It may essentially includes 5.0 to 10.0 wt % of Zn, 2.8 to 5.0 wt % of Sn, 0.4 to 3.0 wt % of Bi, 0?Se?0.35 wt %, 0<P<0.5 wt %, one of 0<Sb?2.2 wt % and 0<Ni?4.8 wt %, 1.20 to 4.90 Vol. % of at least one selected from the group consisting of a non-solid solution substance secured with Bi and a non-solid solution secured with Bi and Se, and a balance of Cu and unavoidable impurities.

Abstract: Provided is a copper alloy sputtering target containing 0.01 to (less than) 0.5 wt % of at least 1 element selected from Al or Sn, and containing Mn or Si in a total amount of 0.25 wtppm or less. The above copper alloy sputtering target allows the formation of a wiring material for a semiconductor element, in particular, a seed layer being stable, uniform and free from the occurrence of coagulation during electrolytic copper plating and exhibits excellent sputtering film formation characteristics. A semiconductor element wiring formed with this target is also provided.

Abstract: The present invention relates to a nanocrystalline metallic material, particularly to nano-twin copper material with ultrahigh strength and high electrical conductivity and its preparation method. High-purity polycrystalline Cu material with a microstructure of roughly equiaxed submicron-sized grains (300-1000 nm) has been produced by pulsed electrodeposition technique, by which high density of growth-in twins with nano-scale twin spacing were induced in the grains. Inside each grain, there are high densities of growth-in twin lamellae. The twin lamellae with the same orientations are inter-parallel, and the twin spacing ranges from several nanometers to 100 nm with a length of 100-500 nm. This Cu material invented has more excellent performance than existing ones.

Abstract: [Task] The adhesion resistance of Cu—Bi based or Cu—Sn—Bi based alloy is lower than that of Cu—Sn—Pb based alloy, and also since conformability of the former alloy is low. Therefore, when Bi of the former alloy adheres onto an opposite shaft, seizure of the former alloy is likely to occur as compared with the case of the latter Cu—Sn—Pb based alloy. In is alloyed in the Bi phase of the Cu—Sn—Bi—In based copper alloy. The In-alloyed Bi phase has a considerably low melting point and therefore the sliding properties deteriorate. [Means for Solving] A Pb-free copper-based sintered sliding material has a composition that 0.5 to 15.0 mass % Bi and 0.3 to 15.0 mass % In, with the balance being Cu and inevitable impurities. With regard to the existence of Cu, Bi, and In, the material consists of a Cu matrix containing In, a Bi phase, and an In concentrated region in said Cu matrix at a boundary of said Bi phase.

Abstract: A copper-based alloy that has the soundness of alloy enhanced by restraining the concentrated occurrence of microporosities while suppressing the lead content and an ingot and a liquid-contacting part using the alloy are provided. The copper-based alloy has the soundness of alloy improved during the course of solidification of the copper-based alloy by crystallizing an intermetallic compound capable of solidifying at a temperature exceeding a solidus line in dendritic gaps of the alloy, suppressing migration of a solute, thereby allowing dispersion of microporosities, utilizing crystallization of the intermetallic compound as well for effecting dispersed crystallization of a low melting metal or a low melting intermetallic compound capable of solidifying at a temperature falling short of a liquidus line, and relying on the low melting metal or low melting intermetallic compound to enter the microporosities and suppress occurrence of microporosities.

Abstract: Disclosed is a Cu—Ni—Si copper alloy sheet that excels in strength and formability and is used in electrical and electronic components. The copper alloy sheet contains, by mass, 1.5% to 4.5% Ni and 0.3% to 1.0% of Si and optionally contains at least one member selected from 0.01% to 1.3% of Sn, 0.005% to 0.2% of Mg, 0.01% to 5% of Zn, 0.01% to 0.5% of Mn, and 0.001% to 0.3% of Cr, with the remainder being copper and inevitable impurities. The average size of crystal grains is 10 ?m or less, the standard deviation of crystal grain size satisfies the condition: 2?<10 ?m, and the number of dispersed precipitates lying on grain boundaries and having a grain size of from 30 to 300 nm is 500 or more per millimeter.

Abstract: A low temperature solder including indium in the range of 62-65 weight percent and tin in the range of 31-33 weight percent uses the heat generated during thermal treatment of one or more glass sheets to melt the solder. In one non-limiting embodiment, a lead providing external access to an electrical conductive arrangement, e.g. a conductive member between and connected to spaced bus bars between laminated sheets has an end portion of a connector, e.g. a lead soldered to each of the bus bars during thermal processing of the sheets, e.g. during the lamination of the sheets during a windshield manufacturing process. In another nonlimiting embodiment, the connector is soldered to the electrically conductive arrangement during the annealing of glass blanks following the heating and shaping of the glass blanks.

Abstract: Nano-structured interconnect formation and a reworkable bonding process using solder films. Large area fabrication of nano-structured interconnects is demonstrated at a very fine pitch. This technology can be used for pushing the limits of current flip chip bonding in terms of pitch, number of I/Os, superior combination of electrical and mechanical properties as well as reworkability. Sol-gel and electroless processes were developed to demonstrate film bonding interfaces between metallic pads and nano interconnects. Solution-derived nano-solder technology is an attractive low-cost method for several applications such as MEMS hermetic packaging, compliant interconnect bonding and bump-less nano-interconnects.

Abstract: A tubular member 12 having an internal and/or external metal thread 18, 20 at one end thereof, at least part of the thread 18, 20 being coated with an alloy of copper and tin, said alloy containing 5 wt % to 95 wt % copper. The tubular member 10 can be combined with another tubular member 14, 16 to provide a threaded connection 10 having improved galling resistance.

Abstract: A conventional Bi-containing sliding material sometimes underwent seizing in a sliding part operating at a high rotational speed. The present invention provides a sliding material which does not undergo seizing in a sliding part operating at a high rotational speed and a method for its manufacture. A low melting point alloy containing at least 20 mass % of Bi and having a liquidus temperature of at most 200° C. is made to penetrate into a porous portion comprising a Cu—Sn based alloy. A Bi—Sn based alloy or a Bi—In based alloy is suitable as the low melting point alloy. After a low melting point alloy paste is applied to a porous portion, the low melting point alloy is melted and made to penetrate into the porous portion.

Abstract: By exactly comprehending the true properties of the rare elements (such as Bi and Se) which are alternative components for Pb, the alloy is enabled to secure machinability equal to the bronze alloy (CAC406) generally used hitherto and acquire mechanical properties at least equal to the CAC406 as well in spite of a decrease in the content of the rare elements (such as Bi and Se) in the alloy. Further, it is possible to suppress the occurrence of casting defects by elucidating the unresolved influence of the decrease of the alternative components (such as Bi and Se) for Pb on the wholesomeness of a casting. Moreover, it is possible, by decreasing the rare elements, to produce a copper-based alloy containing rare elements at a low cost and to provide a cast ingot and a liquid-contacting part each using the alloy. The copper-based alloy, and the cast ingot and liquid-contacting part each using the alloy individually contain at least 2.8 to 5.0 wt % of Sn, 0.4 to 3.0 wt % of Bi and satisfying 0<Se?0.

Abstract: The invention includes a sputtering target containing copper of a purity of at least about 99.999 wt. %, and at least one component selected from the group consisting of Ag, Sn, Te, In, B, Bi, Sb, and P dispersed within the copper. The total of Ag, Sn, Te, In, B, Bi, Sb, and P within the copper is from at least 0.3 ppm to about 10 ppm. The sputtering target has a substantially uniform grain size of less than or equal to about 50 micrometers throughout the copper and the at least one component.

Abstract: The material for a metal strip for manufacturing electrical contact component parts has, expressed in percent by weight, the following composition: nickel (Ni) 0.5-3.5% silicon (Si) 0.08-1.0%  tin (Sn) 0.1-1.0% zinc (Zn) 0.1-1.0% zirconium (Zr) 0.005-0.2%  silver (Ag) 0.02- 0.5%  The remainder is copper and includes impurities caused by smelting.

Abstract: A metallic uranium article having a protective coating of a copper-tin alloy containing from 45 to 50% by weight of copper and from 55 to 50% by weight of tin, said alloy being firmly bonded to the metallic uranium.