Abstract: A method of generating a matrix to relate a plurality of controllable parameters of a chemical mechanical polishing system to a polishing rate profile includes polishing a test substrate. The test substrate is polished for a first period of time using baseline parameter values with a first parameter set to a first value, and the test substrate is polished for a second period of time using first modified parameter values with the first parameter set to a modified second value. A thickness of the test substrate is monitored during polishing, and a baseline polishing rate profile is determined for the first period of time and a first modified polishing rate profile is determined for the second period of time. The matrix is calculated based on the baseline parameter values, the first modified parameters, the baseline polishing rate profile and the first modified polishing rate profile.

Abstract: A substrate processing apparatus includes a substrate polishing unit 40 having a polishing pad for polishing a wafer W, and a top ring 41 for holding a wafer and pressing the wafer against the polishing pad. An elastic membrane 80 for holding a surface opposite to a polishing surface of the wafer W is attached to the top ring 41 as a consumable. The elastic membrane 80 is provided with a plurality of strain sensors 85 and 86 for measuring strain occurring in the elastic membrane 80 during polishing, and data of an amount of strain is read to a control device 15 by detection units 90 and 91. The control device 15 sets a processing condition such as a polishing recipe for the wafer W based on strain information of the elastic membrane 80 measured by the strain sensors.

Abstract: A substrate holding apparatus which can adjust polishing profile precisely is disclosed. The substrate holding apparatus includes an elastic membrane that forms a plurality of pressure chambers for pressing a substrate, and a head body to which the elastic membrane is coupled. The elastic membrane includes a contact portion to be brought into contact with the substrate for pressing the substrate against a polishing pad, an edge circumferential wall extending upwardly from a peripheral edge of the contact portion, and a plurality of inner circumferential walls arranged radially inwardly of the edge circumferential wall and extending upwardly from the contact portion. At least two adjacent inner circumferential walls of the plurality of inner circumferential walls include slope circumferential walls inclined radially inwardly. The slope circumferential walls are inclined radially inwardly in their entirety from their lower ends to upper ends, and extend upwardly.

Abstract: A manufacturing method of a wafer includes a first and a second resin-application grinding step, and a third surface-grinding step. The first step includes: a first formation step of forming a first coating layer; a first surface-grinding step of placing the wafer so that the first coating layer contacts a reference surface of a table and surface-grinding a first surface of the wafer; and a first removal step of removing the first coating layer. The second step includes: a second formation step of forming a second coating layer; a second surface-grinding step of placing the wafer so that the second coating layer contacts the reference surface and surface-grinding the second surface; and a second removal step of removing the second coating layer. In the third step, the wafer is placed so that the last surface-ground surface contacts the reference surface and a surface opposite the contacted surface is surface-ground.

Abstract: A substrate processing apparatus includes: a conveyor belt configured to have an outer surface on which a bottom surface of a substrate is seated; and a polishing head unit configured to face an upper surface of the substrate, wherein the polishing head unit includes: a polishing head connected to a driver; a polishing pad configured to face the polishing head; a polishing pad fixing ring disposed between the polishing head and the polishing pad; and a temperature sensor configured to overlap the polishing pad fixing ring and to be spaced apart from the polishing pad fixing ring.

Abstract: The present disclosure provides a fully automatic gemstone polishing robot. An aspect of the present disclosure provides an automatic gemstone polishing robot comprising: a gemstone polishing unit, comprising a gemstone holding unit for supporting a gemstone in contact with an abrasive surface, and configured to polish said gemstone in a plurality of iterations based on a feedback signal; an image capturing unit to capture, in one or more of the plurality of iterations, at least one image of the gemstone; and an image processing unit, which when executed by one or more processors, analyzes said at least one image of the gemstone with respect to one or a plurality of gemstone parameters, wherein the image processing unit is further configured to compare the one or a plurality of analyzed gemstone parameters with one or a plurality of pre-determined gemstone parameters to generate the feedback signal to be transmitted to the gemstone polishing unit.

Abstract: An as-sliced wafer processing method includes a grinding step of grinding a first surface of an as-sliced wafer, an outer periphery positioning step of moving a chuck table and a grinding unit relative to each other in directions parallel to a holding surface of the chuck table so as to position an edge on an outer periphery of grinding stones at an outer peripheral edge of the first surface after the grinding step is carried out, and a chamfering step of chamfering an outer periphery of the first surface of the as-sliced wafer by the grinding stones after the outer periphery positioning step is carried out.

Abstract: Implementations of a semiconductor substrate may include a wafer including a first side and a second side; and a support structure coupled to the wafer at a desired location on the first side, the second side, or both the first side and the second side. The support structure may include an organic compound.

Abstract: A substrate processing apparatus includes: a holding part for holding a substrate; a rotating part for rotating the holding part to rotate the substrate together with the holding part; a liquid supply part for supplying a cleaning liquid to a main surface of the substrate; a polishing head for polishing the main surface; a moving part for scanning the polishing head in a radial direction of the substrate while pressing the polishing head against the main surface; and a controller for controlling the rotating part, the liquid supply part, and the moving part. The controller sets a division line that divides the main surface into plural areas in the radial direction, and controls the liquid supply part to supply the cleaning liquid for each area and controls the moving part to scan the polishing head for each area while a subsequent supply of the cleaning liquid is stopped.

Abstract: A chemical mechanical polishing system includes a steam generator with a heating element to apply heat to a vessel to generate steam, an opening to deliver steam onto a polishing pad, a first valve in a fluid line between the opening and the vessel, a sensor to monitor a steam parameter, and a control system. The control system causes the valve to open and close in accordance with a steam delivery schedule in a recipe, receive a measured value for the steam parameter from the sensor, receive a target value for the steam parameter, and perform a proportional integral derivative control algorithm with the target value and measured value as inputs so as to control the first valve and/or a second pressure release valve and/or the heating element such that the measured value reaches the target value substantially just before the valve is opened according to the steam delivery schedule.

Abstract: Provided is a wafer including a ring part and a processed part. The processed part is connected to the ring part. The processed part has a top surface which has been grounded and a bottom surface opposite to the top surface. The processed part is surrounded by the ring part. A region where the top surface connects to the ring part is a curved surface curved upwards.

Abstract: A surface-treating article, comprising a circular substrate (100) comprising a first major surface, an abrasive disposed on the first major surface, the abrasive having a first concentration at a first radius (110) measured from the center of the substrate, the abrasive having a second concentration not equal to the first concentration at a second radius (120) measured from the center of the substrate, wherein the first radius (110) and the second radius (120) are different lengths.

Abstract: A chemical mechanical polishing system includes a steam generator with a heating element to apply heat to a vessel to generate steam, an opening to deliver steam onto a polishing pad, a first valve in a fluid line between the opening and the vessel, a sensor to monitor a steam parameter, and a control system. The control system causes the valve to open and close in accordance with a steam delivery schedule in a recipe, receive a measured value for the steam parameter from the sensor, receive a target value for the steam parameter, and perform a proportional integral derivative control algorithm with the target value and measured value as inputs so as to control the first valve and/or a second pressure release valve and/or the heating element such that the measured value reaches the target value substantially just before the valve is opened according to the steam delivery schedule.

Abstract: The present invention discloses a wafer polishing device, which comprises a second pressure medium cavity for detecting pressure changes; a porous disc with a plurality of through holes, and its lower surface is covered with a flexible single cavity film; a conduction valve unit for conduction or isolation between the second pressure medium cavity and the third pressure medium cavity, which at least includes a conduction valve seat, a conduction valve and an elastic part. The lower end of the conduction valve seat extends into the through hole, and protrudes from the lower end face of the conduction valve seat; The conduction valve seat, the porous disc and the covered flexible single cavity membrane combined to form the third pressure medium cavity; a first pressure medium cavity.

Abstract: A die bonding system comprising a wafer lift and level assembly configured to allow rapid planarization of a wafer comprising a wafer frame configured to retain a wafer and be slidably retained within guide clevises and a leveling pedestal configured to support a wafer from below in a localized area where a die bonding operation is to take place, allowing the quick and repeatable planarization of die(s) to the wafer without the need for distinct planarization procedures that would slow cycle times and decrease production.

Abstract: A machine for working glass slabs includes a supporting structure, a slab grinding section having grinding heads, a conveyor assembly adapted to move the glass slab, and a slab drilling section having a conveyor adjacent to the conveyor assembly. The slab grinding section has suckers for keeping the glass slab next to a working plane spaced and/or offset with respect to the advancement plane, and a computerized numeric control assembly to perform workings on the glass slab.

Abstract: A substrate processing method includes polishing a target surface of a substrate to be polished by moving a polishing brush in a horizontal direction while pressing the polishing brush against the polishing target surface of the substrate which rotates in a horizontal posture around a vertical axis. The polishing is performed while varying a rotation speed of the substrate and a moving speed of the polishing brush such that the rotation speed of the substrate decreases stepwise or continuously and the moving speed of the polishing brush in a radial direction of the substrate decreases stepwise or continuously as a distance from a center of rotation of the substrate measured in the radial direction of the substrate to a center of the polishing brush increases.

Abstract: The polishing apparatus includes: a polishing table configured to support a polishing pad having a polishing surface; a rotatable head body having a pressing surface; a retainer ring configured to press the polishing surface and rotatable together with the head body; a rotary ring; a stationary ring; and local-load exerting devices each configured to apply a local load to the stationary ring. The local-load exerting devices include a first pressing member and a second pressing member coupled to the stationary ring. The first pressing member is arranged at an upstream side of the retainer ring in a moving direction of the polishing surface, and the second pressing member is arranged at a downstream side of the retainer ring in the moving direction of the polishing surface.

Abstract: A method for selecting a template assembly includes: preparing a template assembly in which a template is concentrically attached on a base ring or a base plate having a larger outer diameter than the template, the template having a back pad to hold a workpiece back surface and a retainer ring positioned on the back pad and to hold an edge portion of the workpiece; non-destructively measuring a height position distribution of the retainer ring and the back pad on the template side of the template assembly, where an outer peripheral edge surface of the base ring or the base plate serves as a reference surface; calculating a flatness of the retainer ring and an average amount of step differences between the retainer ring and the back pad from the measured height position distribution; and selecting the template assembly based on the flatness and the average amount of step differences.

Abstract: Embodiments of the present disclosure relate to advanced polishing pads with tunable chemical, material and structural properties, and new methods of manufacturing the same. According to one or more embodiments of the disclosure, it has been discovered that a polishing pad with improved properties may be produced by an additive manufacturing process, such as a three-dimensional (3D) printing process. Embodiments of the present disclosure thus may provide an advanced polishing pad that has discrete features and geometries, formed from at least two different materials that include functional polymers, functional oligomers, reactive diluents, and curing agents. For example, the advanced polishing pad may be formed from a plurality of polymeric layers, by the automated sequential deposition of at least one resin precursor composition followed by at least one curing step, wherein each layer may represent at least one polymer composition, and/or regions of different compositions.

Abstract: A carrier head includes a base assembly, a substrate mounting surface connected to the base assembly, a plurality of segments disposed circumferentially around the substrate mounting surface to provide a collet retaining ring to surround a substrate mounted on the substrate mounting surface, and an outer ring that is vertically movable relative to the plurality of segments. An inner surface of the collet retaining ring is configured to engage a substrate, and the collect retaining ring and outer ring are configured such that vertical motion of the outer ring controls motion of the collet retaining ring between a clamping and unclamping position.

Abstract: A method for repairing an at least externally coated hollow component. The direct mechanical machining of a coated component after use removes the need for a coating-removal and selective hollowing step and a selective repair of cracks, since a design adaptation leads to a component being engineered or used such that it can be used again as a result of external dimensional stipulations.

Abstract: The present disclosure provides a retaining ring for polishing a wafer by a slurry. The retaining ring includes a ring-shaped main body and a plurality of guiding elements. The main body has an outer surface, an inner surface, and an inner space for accommodating the wafer. The main body includes a plurality of channels configured to allow the slurry to flow into the inner space from the outer surface. The plurality of guiding elements is disposed at the outer surface of the main body with respect to the plurality of channels. Each of the guiding elements forms a slurry capture area with the main body to guide the slurry towards each of the respective channels.

Abstract: The invention provides a polymer-polymer composite polishing pad useful for polishing or planarizing a substrate of at least one of semiconductor, optical and magnetic substrates. The polymer-polymer composite polishing pad includes a polishing layer having a polishing surface and a polymeric matrix forming the polishing layer. The polymer matrix is hydrophilic as measured with distilled water at a pH of 7 at a surface roughness of 10 ?m rms after soaking in distilled water for five minutes. Cationic fluoropolymer particles having nitrogen-containing end groups are embedded in the polymeric matrix. The cationic fluoropolymer particles can increase polishing removal rate of substrate on a patterned wafer when polishing with slurries containing anionic colloidal silica.

Abstract: The invention relates to a grinding machine, which is suitable for a robot-supported grinding process. According to one embodiment, the grinding machine has a housing, a motor arranged in the interior of the housing, a fan wheel arranged on a motor shaft of the motor in the interior of the housing, and a support plate coupled to the motor shaft for receiving a grinding disc. The support plate has openings for intake of grinding dust into the interior of the housing. The grinding machine furthermore has an outlet arranged in a wall of the housing for exhausting the grinding dust out of the interior of the housing and a non-rerun valve arranged in the wall of the housing. The non-return valve enables an to escape from the interior of the housing, but prevents intake of air into the interior of the housing.

Abstract: A chemical mechanical polishing apparatus includes a platen to support a polishing pad, the platen having a recess, a flexible membrane in the recess, and an in-situ vibration monitoring system to generate a signal. The in-situ acoustic monitoring system includes a vibration sensor supported by the flexible membrane and positioned to couple to an underside of the polishing pad.

Abstract: A method of forming a CMP pad includes providing a solution of a block copolymer (BCP), where the BCP includes a first segment and a second segment connected to the first segment, the second segment being different from the first segment in composition. The method further includes processing the BCP to form a polymer network having a first phase and a second phase embedded in the first phase, where the first phase includes the first segment and the second phase includes the second segment, and subsequently removing the second phase from the polymer network, thereby forming a polymer film that includes a network of pores embedded in the first phase. Thereafter, the method proceeds to combining the CMP top pad and a CMP sub-pad to form a CMP pad, where the CMP top pad is configured to engage with a workpiece during a CMP process.

Abstract: A system and method for polishing a substrate, and a retaining ring assembly therefor, are described herein. A retaining ring assembly is configured to be attached to a carrier head. The retaining ring assembly includes a retaining ring including a lower surface, an inner surface, an outer surface and a plurality of grooves, where the lower surface is configured to contact a polishing pad during a polishing process, and each of the plurality of grooves are formed in the lower surface and extend from the inner surface to the outer surface. The retaining ring assembly includes a plurality of retainers, each retainer including a movable tooth at least partially disposed in a respective groove of the retaining ring and moveable relative to the lower surface.

Abstract: A semiconductor device and method of manufacture are provided. In an embodiment a first semiconductor device and a second semiconductor device are formed within a semiconductor wafer and a scribe region between the first semiconductor device and the second semiconductor device is patterned. A singulation process is then utilized within the scribe region to singulate the first semiconductor device from the second semiconductor device. The first semiconductor device and the second semiconductor device are then bonded to a second semiconductor substrate and thinned in order to remove extension regions from the first semiconductor device and the second semiconductor device.

Abstract: A method for controlling the polishing of a gemstone includes: obtaining a three-dimensional model of the gemstone; fixing the gemstone in a dop, wherein an initial facet to be polished is aligned; obtaining at least one image of the initial facet; based on the obtained at least one image and the obtained three-dimensional model, determining at least first setting parameters for a first planned facet positioned between the initial facet and a desired final polished facet; setting the dop for obtaining a polished gemstone having a polished facet approaching the first planned facet; obtaining at least one image of the polished facet; based on the obtained at least one image of the polished facet and the three-dimensional model, determining at least further setting parameters for a further planned facet; setting the dop for obtaining a polished gemstone having a polished facet approaching the further planned facet.

Abstract: A system reinforcement learning method includes: processing an input image based on a first network of a system to obtain a first result; inputting the first result to a second network of the system to obtain a second result; and obtaining a reinforcement operation based on the second result by means of a reinforcement network, and adjusting the first result based on the reinforcement operation to obtain a target result. According to the embodiments of the present disclosure, information is fed back from downstream to upstream by means of the reinforcement network, and an output result of the system is optimized.

Abstract: Gypsum panels and methods for their manufacture are provided herein. The gypsum panels include a gypsum core having a first surface and a second opposed surface and a first fiberglass mat associated with the first surface of the gypsum core, such that gypsum from the gypsum core penetrates at least a portion of the first fiberglass mat.

Abstract: Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic metal oxide particles, such as ceria-coated silica; and dual chemical additives for providing the tunable oxide film removal rates and tunable SiN film removal rates. Chemical additives comprise at least one nitrogen-containing aromatic heterocyclic compound and at least one non-ionic organic molecule having more than one hydroxyl functional group organic.

Abstract: A wafer polishing head is provided. The wafer polishing head includes a carrier head, a plurality of piezoelectric actuators disposed on the carrier head, and a membrane disposed over the plurality of piezoelectric actuators. The plurality of piezoelectric actuators is configured to provide mechanical forces on the membrane and generate an electrical charge when receiving counterforces of the mechanical forces through the membrane. A wafer polishing system and a method for polishing a substrate using the same are also provided.

Abstract: A method of performing a chemical mechanical planarization (CMP) process includes holding a wafer by a retainer ring attached to a carrier, pressing the wafer against a first surface of a polishing pad, the polishing pad rotating at a first speed, dispensing a slurry on the first surface of the polishing pad, and generating vibrations at the polishing pad.

Abstract: During chemical mechanical polishing of a substrate, a signal value that depends on a thickness of a layer in a measurement spot on a substrate undergoing polishing is determined by a first in-situ monitoring system. An image of at least the measurement spot of the substrate is generated by a second in-situ imaging system. Machine vision processing, e.g., a convolutional neural network, is used to determine a characterizing value for the measurement spot based on the image. Then a measurement value is calculated based on both the characterizing value and the signal value.

Abstract: A polishing apparatus includes a polishing station to hold a polishing pad, a carrier head to hold a substrate in contact with a polishing pad at the polishing station, a camera positioned to capture an image of a lower surface of a consumable part when the consumable part moves away from the polishing pad, and a controller configured to perform an image processing algorithm on the image to determine whether the consumable part is damaged. The consumable part can be a retaining ring on a carrier head, or a conditioner disk on a conditioner head.

Abstract: A polishing head of a wafer polishing apparatus is provided with: a membrane head that can independently control a center control pressure pressing a center portion of a wafer, and an outer periphery control pressure pressing an outer peripheral portion of the wafer; an outer ring integrated with the membrane head so as to configure the outer peripheral portion of the membrane head; and a contact type retainer ring provided outside the membrane head. The membrane head has a central pressure chamber of a single compartment structure that controls the center control pressure, and an outer peripheral pressure chamber that is provided above the central pressure chamber, and that controls the outer periphery control pressure. A position of a lower end of the outer ring reaches at least a position of an inner bottom surface of the central pressure chamber.

Abstract: The invention provides a polishing pad suitable for polishing at least one of semiconductor, optical, magnetic or electromechanical substrates. It includes a polyurea polishing layer and a polyurea matrix. The polyurea has a soft segment being a copolymer of aliphatic fluorine-free polymer groups and a fluorocarbon having a length of a least six carbons. The polyurea matrix being cured with a curative agent and including gas or liquid-filled polymeric microelements. The polyurea matrix has a bulk region and a transition region adjacent the bulk region that extends to the polishing layer. The polymeric microelements in the transition region decrease in thickness as they approach the polishing layer with thickness of the compressed microelements adjacent the polishing layer being less than fifty percent of a diameter of the polymeric microelements in the bulk region. The polishing layer remains hydrophilic during polishing in shear conditions.

Abstract: A Taiko wafer ring cut process method is provided. The Taiko wafer ring cut process method includes the following steps. A Taiko wafer is disposed on the platform. The Taiko wafer is performing by laser ring cutting so that a Taiko ring and an edge portion of the Taiko wafer are separated from a wafer portion of the Taiko wafer. The wafer portion of the Taiko wafer is adhered to a frame.

Abstract: An SiC ingot forming method includes: a holding step of holding by a chuck table a cut section of a primitive SiC ingot cut from an SiC ingot growth base; a planarization step of grinding an end surface of the primitive SiC ingot held by the chuck table, to planarize the end surface; a c-plane detection step of detecting a c-plane of the primitive SiC ingot from the planarized end surface; a first end surface forming step of grinding the planarized end surface, to form a first end surface inclined at an off angle relative to the c-plane; and a second end surface forming step of holding the first end surface by the chuck table and grinding the cut section of the primitive SiC ingot in parallel to the first end surface, to form a second end surface.

Abstract: An apparatus for performing chemical mechanical polish on a wafer includes a polishing head that includes a retaining ring. The polishing head is configured to hold the wafer in the retaining ring. The retaining ring includes a first ring having a first hardness, and a second ring encircled by the first ring, wherein the second ring has a second hardness smaller than the first hardness.

Abstract: A carrier head includes a base assembly, a substrate mounting surface connected to the base assembly, and a plurality of segments disposed circumferentially around the substrate mounting surface to provide a retaining ring to surround a substrate mounted on the substrate mounting surface. An inner surface of each of the plurality of segments is configured to engage the substrate, and each segment of the plurality of segments of the retaining ring is pivotally connected to the base assembly such that a lower portion of each segment of the retaining ring is swingable toward and away from the substrate.

Abstract: In order to respond flexibly to various processing modes, such as forming curved surface shapes, when cutting a workpiece using a wire saw, this wire saw device (1) is provided with: a single robot arm (2) that is capable of moving freely by means of multi-axis control; a wire saw unit (3) that is detachably connected to the robot arm (2) via a tool changer (7); a wire (8) that spans a plurality of pulleys supported within the wire saw unit (3); and a workpiece cutting zone (20) that is established between the pulleys. The workpiece is cut to a prescribed shape by moving the robot arm (2) in a preset direction while running the wire (8) of the wire saw unit (3) and pressing the wire (8) against the supported workpiece.

Abstract: A polishing pad including a polishing layer and at least one detection window is provided. The polishing layer includes a polishing surface and a back surface having at least one protrusion. The at least one detection window is disposed at a location corresponding to the at least one protrusion in the polishing layer, and the at least one protrusion surrounds the at least one detection window. A manufacturing method and a polishing method of the polishing pad are also provided.

Abstract: Various embodiments disclosed relate to a partially shaped abrasive particle. The partially shaped abrasive particle includes a shaped portion, engineered to have a polygonal shape, and an irregular portion. The irregular portion is coupled to a base of the shaped portion, forming a single partially shaped abrasive particle.

Abstract: A diamond tool comprising a tool shank and a tool head, which is fixed on the tool shank and which is formed by a layer of material interspersed with diamonds at least in sections, the layer of material interspersed with diamonds at least in sections being directly integrally bonded to the tool shank by an electroplating deposition process and the tool head having a recess on the front side, so that in cross-section the tool head has the form of a circular ring in the area of the free end, the tool head forming a hollow milling cutter and a wall forming the hollow milling cutter and having the form of a circular ring consisting only of a nickel-diamond material that is grown by electroplating.

Abstract: Provided is a method of lapping a semiconductor wafer, which can suppress the formation of a ring-shaped pattern in a nanotopography map. The method of lapping a semiconductor wafer includes: a stopping step of stopping lapping of a semiconductor wafer; a reversing step of reversing surfaces of the semiconductor wafer facing a upper plate and a lower plate after the stopping step; and a resuming step of resuming lapping of the semiconductor wafer after the reversing step while maintaining the reversal of the surfaces facing the plates.

Abstract: A biocompatible controlled release form of complexed iodine is achieved by a complexation of polyvinyl alcohol based foam and characterized by a residual starch component to optimize iodine release profiles. The resulting iodine complexed polyvinyl alcohol foam may be utilized locally as an antimicrobial agent that releases controlled amounts of iodine sufficient to kill microbes for extended durations without excessive bulk and rigidity.

Abstract: A substrate processing system configured to process a substrate includes an eccentricity detection device configured to detect, in a combined substrate in which a first substrate and a second substrate are bonded to each other, an eccentricity of the first substrate; a modification layer forming device configured to form a modification layer within the first substrate along a boundary between a peripheral portion to be removed and a central portion of the first substrate; and a periphery removing device configured to remove the peripheral portion starting from the modification layer.