Utilizing Particle (e.g., Electron Beam, Ion, Etc.) Bombardment Or Electromagnetic Wave Energy (e.g., Laser, Etc.) Treatment Of Selected Regions To Form Conducting Or Insulating Areas Patents (Class 505/325)
  • Patent number: 11108172
    Abstract: The various embodiments described herein include methods, devices, and systems for fabricating and operating superconducting circuits. In one aspect, an electric circuit includes: (1) a first superconducting component having a first terminal, a second terminal, and a constriction region between the first terminal and the second terminal; (2) a second superconducting component having a third terminal and a fourth terminal; and (3) a first electrically-insulating component that thermally couples the first superconducting component and the second superconducting component such that heat produced at the constriction region is transferred through the first component to the second superconducting component.
    Type: Grant
    Filed: October 25, 2019
    Date of Patent: August 31, 2021
    Assignee: PSIQUANTUM CORP.
    Inventors: Faraz Najafi, Qiaodan Jin Stone
  • Patent number: 9601681
    Abstract: Operational characteristics of an high temperature superconducting (“HTS”) film comprised of an HTS material may be improved by depositing a modifying material onto appropriate surfaces of the HTS film to create a modified HTS film. In some implementations of the invention, the HTS film may be in the form of a “c-film.” In some implementations of the invention, the HTS film may be in the form of an “a-b film,” an “a-film” or a “b-film.” The modified HTS film has improved operational characteristics over the HTS film alone or without the modifying material. Such operational characteristics may include operating in a superconducting state at increased temperatures, carrying additional electrical charge, operating with improved magnetic properties, operating with improved mechanic properties or other improved operational characteristics. In some implementations of the invention, the HTS material is a mixed-valence copper-oxide perovskite, such as, but not limited to YBCO.
    Type: Grant
    Filed: January 31, 2014
    Date of Patent: March 21, 2017
    Assignee: Ambature, Inc.
    Inventors: Douglas J. Gilbert, Timothy S. Cale
  • Patent number: 9590161
    Abstract: A method of forming a superconductor includes exposing a layer disposed on a substrate to an oxygen ambient, and selectively annealing a portion of the layer to form a superconducting region within the layer.
    Type: Grant
    Filed: November 27, 2013
    Date of Patent: March 7, 2017
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Connie P. Wang, Paul Murphy, Paul Sullivan, Sukti Chatterjee
  • Patent number: 9578752
    Abstract: The present invention relates to a method for manufacturing a board that includes a conductive pattern, which comprises the steps of 1) discharging a conductive inorganic composition that includes a conductive inorganic metal particle on a substrate; 2) discharging a conductive organic composition that includes a conductive organic metal complex on the conductive inorganic composition; and 3) sintering the conductive inorganic composition and the conductive organic composition, and a board that includes a conductive pattern manufactured by using the same. A board that includes a conductive pattern according to the present invention may have high conductivity even though it is sintered at a lower sintering temperature than a board that includes a conductive pattern formed by using only an organic material or only an inorganic material.
    Type: Grant
    Filed: February 5, 2010
    Date of Patent: February 21, 2017
    Assignee: LG CHEM, LTD.
    Inventor: Jung-Ho Park
  • Patent number: 9543496
    Abstract: A method comprising irradiating a polycrystalline rare earth metal-alkaline earth metal-transition metal-oxide superconductor layer with protons having an energy of 1 to 6 MeV. The irradiating process produces an irradiated layer that comprises randomly dispersed defects with an average diameter in the range of 1-10 nm.
    Type: Grant
    Filed: March 17, 2014
    Date of Patent: January 10, 2017
    Assignee: UChicago Argonne, LLC
    Inventors: Ulrich Welp, Dean J. Miller, Wai-Kwong Kwok, Martin W. Rupich, Steven Fleshler, Alexis P. Malozemoff
  • Patent number: 9472324
    Abstract: Operational characteristics of an extremely low resistance (“ELR”) film comprised of an ELR material may be improved by depositing a modifying material onto appropriate surfaces of the ELR film to create a modified ELR film. In some implementations of the invention, the ELR film may be in the form of a “c-film.” In some implementations of the invention, the ELR film may be in the form of an “a-b film,” an “a-film” or a “b-film.” The modified ELR film has improved operational characteristics over the ELR film alone or without the modifying material. Such operational characteristics may include operating in an ELR state at increased temperatures, carrying additional electrical charge, operating with improved magnetic properties, operating with improved mechanic properties or other improved operational characteristics. In some implementations of the invention, the ELR material is a mixed-valence copper-oxide perovskite, such as, but not limited to YBCO.
    Type: Grant
    Filed: December 13, 2013
    Date of Patent: October 18, 2016
    Assignee: Ambature, Inc.
    Inventors: Douglas J. Gilbert, Timothy S. Cale
  • Patent number: 9431156
    Abstract: In some implementations of the invention, existing extremely low resistance materials (“ELR materials”) may be modified and/or new ELR materials may be created by enhancing (in the case of existing ELR materials) and/or creating (in the case of new ELR materials) an aperture within the ELR material such that the aperture is maintained at increased temperatures so as not to impede propagation of electrical charge there through. In some implementations of the invention, as long as the propagation of electrical charge through the aperture remains unimpeded, the material should remain in an ELR state; otherwise, as the propagation of electrical charge through the aperture becomes impeded, the ELR material begins to transition into a non-ELR state.
    Type: Grant
    Filed: February 28, 2014
    Date of Patent: August 30, 2016
    Assignee: Ambature, Inc.
    Inventor: Douglas J. Gilbert
  • Patent number: 9431594
    Abstract: The invention pertains to creating new extremely low resistance (“ELR”) materials, which may include high temperature superconducting (“HTS”) materials. In some implementations of the invention, an ELR material may be modified by depositing a layer of modifying material unto the ELR material to form a modified ELR material. The modified ELR material has improved operational characteristics over the ELR material alone. Such operational characteristics may include operating at increased temperatures or carrying additional electrical charge or other operational characteristics. In some implementations of the invention, the ELR material is a cuprate-perovskite, such as, but not limited to BSCCO. In some implementations of the invention, the modifying material is a conductive material that bonds easily to oxygen, such as, but not limited to, chromium.
    Type: Grant
    Filed: March 3, 2014
    Date of Patent: August 30, 2016
    Assignee: Ambature, Inc.
    Inventors: Douglas J. Gilbert, Timothy S. Cale
  • Publication number: 20150148236
    Abstract: A method of forming a superconductor includes exposing a layer disposed on a substrate to an oxygen ambient, and selectively annealing a portion of the layer to form a superconducting region within the layer.
    Type: Application
    Filed: November 27, 2013
    Publication date: May 28, 2015
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Connie P. Wang, Paul Murphy, Paul Sullivan, Sukti Chatterjee
  • Publication number: 20150105262
    Abstract: The invention provides the Magnetoelectric Effect Material consisted of a single isotope, the alloy of isotopes, or the compound of isotopes. The invention applies enrichment and purification to increase the isotope abundance, to create the density of nuclear exciton by irradiation, and therefore increase the magnetoelectric effect of the crystal of single isotope, the alloy crystal of isotopes and the compound crystal of isotopes. The invention provides the manufacturing method including the selection rules of isotopes, the fabrication processes and the structure of composite materials. The invention belongs to the area of the nuclear science and the improvement of material character. The invention using the transition of entangled multiple photons to achieve the delocalized nuclear exciton. The mix of selected isotopes adjusts the decay lifetime of nuclear exciton and the irradiation efficiency to generate the nuclear exciton.
    Type: Application
    Filed: February 3, 2012
    Publication date: April 16, 2015
    Inventor: Yao Cheng
  • Patent number: 8716189
    Abstract: A method of producing a superconductive material involves the step (1) of applying a solution of an organic compound of metals, oxides of the metals forming a superconductive material, onto a support body to be subsequently dried, a provisional baking step (2) of causing organic components of the organic compound of the metals to undergo thermal decomposition, and a main baking process step (3) of causing transformation of the oxides of the metals into the superconductive material, thereby producing an epitaxially-grown superconductive coating material, wherein at the time of irradiation of a surface of the support body coated with the solution of the organic compound of the metals for forming the superconductive material, and/or of a surface of the support body, opposite to the surface coated with the solution of the organic compound of the metals, with the laser light, during a period between the steps (1) and (2).
    Type: Grant
    Filed: February 5, 2008
    Date of Patent: May 6, 2014
    Assignees: National Institute of Advanced Industrial Science and Technology, The Japan Steel Works, Ltd.
    Inventors: Mitsugu Sohma, Tetsuo Tsuchiya, Toshiya Kumagai, Kenichi Tsukada, Kunihiko Koyanagi, Takashi Ebisawa, Hidehiko Ohtu
  • Patent number: 8182862
    Abstract: An ion source impinging on the surface of the substrate to be coated is used to enhance a MOCVD, PVD or other process for the preparation of superconducting materials.
    Type: Grant
    Filed: June 5, 2003
    Date of Patent: May 22, 2012
    Assignee: SuperPower Inc.
    Inventors: Venkat Selvamanickam, Hee-Gyoun Lee
  • Publication number: 20120021916
    Abstract: A method and an apparatus for heating a sheet material made of an electrically conductive, non-magnetic material, the apparatus including at least one coil arrangement with DC-carrying windings that is made to rotate around an axis oriented perpendicular to the sheet material and to thereby induce eddy currents in the sheet material.
    Type: Application
    Filed: May 23, 2011
    Publication date: January 26, 2012
    Applicant: ZENERGY POWER GMBH
    Inventors: Carsten Buehrer, Christoph Fuelbier, Jens Krause
  • Patent number: 7902119
    Abstract: Porous ceramic superconductors having a film thickness over 0.5 microns are provided. The superconducting material is applied to a vicinal substrate and optionally nanoparticles are inserted to release local strain. The resultant superconductors exhibit improved Jc values compared to nonvicinal (flat) counterparts and those having no nanoparticles.
    Type: Grant
    Filed: July 21, 2006
    Date of Patent: March 8, 2011
    Inventors: Judy Wu, Rose Emergo, Timothy Haugan, Paul Barnes
  • Patent number: 7888290
    Abstract: The invention herein is directed towards a material exhibiting superconductivity characteristics which includes a laser processed region of a metal oxide crystal. The material has a transition temperature greater than a transition temperature of the metal oxide crystal, preferably greater than 140K. The transition temperature of the material may be considered greater than the transition temperature of the metal oxide crystal if the material has a transition temperature and the metal oxide crystal has no transition temperature. The present invention is also directed to a material which includes a laser processed strontium ruthenate crystal wherein the material has a greater oxygen content than the starting strontium ruthenate crystal. The present invention is also directed towards a method for manufacturing a material exhibiting superconductivity characteristics that includes providing a metal oxide crystal and laser ablating the metal oxide crystal and a material made by this process.
    Type: Grant
    Filed: September 12, 2006
    Date of Patent: February 15, 2011
    Inventors: Armen Gulian, Kent S Wood, Deborah Van Vechten, Vahan R Nikoghosyan
  • Patent number: 7884051
    Abstract: The invention herein is directed towards a method of making material exhibiting superconductivity characteristics which includes a laser processed region of a metal oxide crystal. The material has a transition temperature greater than a transition temperature of the metal oxide crystal, preferably greater than 140K. The transition temperature of the material may be considered greater than the transition temperature of the metal oxide crystal if the material has a transition temperature and the metal oxide crystal has no transition temperature. The present invention is also directed to a material which includes a laser processed strontium ruthenate crystal wherein the material has a greater oxygen content than the starting strontium ruthenate crystal. The present invention is also directed towards a method for manufacturing a material exhibiting superconductivity characteristics that includes providing a metal oxide crystal and laser ablating the metal oxide crystal and a material made by this process.
    Type: Grant
    Filed: February 23, 2010
    Date of Patent: February 8, 2011
    Inventors: Armen M Gulian, Kent S Wood, Deborah Van Vechten, Vahan R Nikoghosyan
  • Patent number: 7871961
    Abstract: A high efficiency catalyst for use in a catalytic partial oxidation process for the production of hydrogen or syngas gas from hydrocarbons is disclosed. The catalyst comprises rhenium in combination with a second metal selected from the group of rhenium to second metal of 25:1 to 1:1. the process comprises reacting a feed containing hydrocarbons with an oxygen source at a C/O ratio of about 0.9 to 1.1 in the presence of the catalyst, and wherein the gas hourly space velocity of the feed over the catalyst ranges from about 1,000 hr?1 to about 2,000,000 hr ?1. In the process, the catalyst is maintained as a temperature of from about 500° C. to about 1,500° C. as the feed makes contact with the catalyst.
    Type: Grant
    Filed: July 18, 2006
    Date of Patent: January 18, 2011
    Assignee: Sud-Chemie Inc.
    Inventors: Shizhong Zhao, X.D. Hu, David Patrick Tolle, David B. Rogers
  • Publication number: 20100216646
    Abstract: A process for preparing a superconductor article includes depositing a precursor solution onto a substrate to form a precursor film, the precursor solution comprising precursor components to a rare earth-alkaline earth metal-transition metal oxide in one or more solvents, decomposing the precursor film to form an intermediate film comprising the rare earth metal, the alkaline earth metal, and the transition metal of the first precursor solution, selectively removing portions of the intermediate film, wherein a patterned intermediate film is obtained, and treating the patterned intermediate film to form a rare earth-alkaline earth metal-transition metal oxide superconductor.
    Type: Application
    Filed: February 26, 2010
    Publication date: August 26, 2010
    Applicant: American Superconductor Corporation
    Inventors: Thomas Kodenkandath, Wei Zhang
  • Patent number: 7687436
    Abstract: Nanometer-sized non-superconducting particulates in superconductive REBCO films, where RE is a rare earth metal, for flux pinning enhancement and a method of forming are disclosed. A target with a second phase material sector portion and a superconductive material portion is used in a pulse laser deposition process to form films on substrates according to the present invention. The films consist of 10-20 nm-sized precipitates. In a 0.5 ?m thick film, a transport critical current density (Jc)>3 MA/cm2 at 77K in self-field was measured. In one embodiment, magnetization Jc at 77 K and 65K showed significant improvements in a composite YBCO films with fine precipitates produced according to the present invention as compared to non-doped (standard) YBCO films (>10 times increase at 9 T, 65 K).
    Type: Grant
    Filed: December 1, 2006
    Date of Patent: March 30, 2010
    Assignee: University of Dayton
    Inventors: Chakrapani Varanasi, Paul N. Barnes
  • Publication number: 20090318296
    Abstract: The invention provides a method of efficiently producing a superconductive material more excellent in properties without the occurrence of ablation and so forth, and large in area when executing thermal decomposition of an organic compound of metals, and formation of a superconductive material with heat treatment.
    Type: Application
    Filed: February 5, 2008
    Publication date: December 24, 2009
    Inventors: Mitsugu Sohma, Tetsuo Tsuchiya, Toshiya Kumagai, Kenichi Tsukada, Kunihiko Koyanagi, Takashi Ebisawa, Hidehiko Ohtu
  • Patent number: 7531205
    Abstract: A method of continuously coating at least one substrate with a buffer layer as a support for a ceramic superconducting material is disclosed. The method includes loading the at least one substrate onto a respective feed spool and feeding the at least one substrate through a vacuum deposition chamber. The method further includes coating the at least one substrate while the at least one substrate is bombarded by ion beams from dual RF-ion sources forming at least one coated substrate, and reloading the at least one coated substrate onto a respective take up spool.
    Type: Grant
    Filed: June 23, 2003
    Date of Patent: May 12, 2009
    Assignee: Superpower, Inc.
    Inventors: Venkat Selvamanickam, Srinivas Sathiraju
  • Patent number: 7510997
    Abstract: The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metals and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layer. In some embodiments the article further comprises electromagnetic devices which may have superconducting properties.
    Type: Grant
    Filed: August 17, 2004
    Date of Patent: March 31, 2009
    Assignees: Applied Thin Films, Inc., UT-Battelle, LLC
    Inventors: Sambasivan Sankar, Amit Goyal, Scott A. Barnett, Ilwon Kim, Donald M. Kroeger
  • Publication number: 20080176749
    Abstract: Novel articles and methods to fabricate same with self-assembled nanodots and/or nanorods of a single or multicomponent material within another single or multicomponent material for use in electrical, electronic, magnetic, electromagnetic, superconducting and electrooptical devices is disclosed. Self-assembled nanodots and/or nanorods are ordered arrays wherein ordering occurs due to strain minimization during growth of the materials. A simple method to accomplish this when depositing in-situ films is also disclosed. Device applications of resulting materials are in areas of superconductivity, photovoltaics, ferroelectrics, magnetoresistance, high density storage, solid state lighting, non-volatile memory, photoluminescence, thermoelectrics and in quantum dot lasers.
    Type: Application
    Filed: March 24, 2008
    Publication date: July 24, 2008
    Inventor: Amit Goyal
  • Patent number: 6982240
    Abstract: A superconducting device operable at temperatures in excess of 30° K. and a method for making the device are described. A representative device is an essentially coplanar SQUID device formed in a single layer of high Tc superconducting material, the SQUID device being operable at temperatures in excess of 60° K. High energy beams, for example ion beams, are used to convert selected portions of the high Tc superconductor to nonsuperconductive properties so that the material now has both superconductive regions and nonsuperconductive regions. In this manner a superconducting loop having superconducting weak links can be formed to comprise the SQUID device.
    Type: Grant
    Filed: May 9, 1991
    Date of Patent: January 3, 2006
    Assignee: International Business Machines Corporation
    Inventors: Gregory John Clark, Richard Joseph Gambino, Roger Hilsen Koch, Robert Benjamin Laibowitz, Allan David Marwick, Corwin Paul Umbach
  • Patent number: 6949490
    Abstract: High-Tc superconducting ceramic oxide products and macroscopic and microscopic methods for making such high-Tc superconducting products. Completely sealed high-Tc superconducting ceramic oxide provides are made by a macroscopic process including the steps of pressing a superconducting ceramic oxide powder into a hollow body of a material inert to oxygen; heat treating the superconducting ceramic oxide powder packed body under conditions sufficient to sinter the ceramic oxide powder; and then sealing any openings of the body. Optionally, a waveform or multiple pulses of alternate magnetic filed can be applied during the heat treatment.
    Type: Grant
    Filed: June 9, 2003
    Date of Patent: September 27, 2005
    Inventor: Dawei Zhou
  • Patent number: 6809066
    Abstract: Ion texturing methods and articles are disclosed.
    Type: Grant
    Filed: July 30, 2001
    Date of Patent: October 26, 2004
    Assignee: The Regents of the University of California
    Inventors: Ronald P. Reade, Paul H. Berdahl, Richard E. Russo, Leslie G. Fritzemeier
  • Patent number: 6638895
    Abstract: A method of fabricating high aspect ratio ceramic structures in which a selected portion of perovskite or perovskite-like crystalline material is exposed to a high energy ion beam for a time sufficient to cause the crystalline material contacted by the ion beam to have substantially parallel columnar defects. Then selected portions of the material having substantially parallel columnar defects are etched leaving material with and without substantially parallel columnar defects in a predetermined shape having high aspect ratios of not less than 2 to 1. Etching is accomplished by optical or PMMA lithography. There is also disclosed a structure of a ceramic which is superconducting at a temperature in the range of from about 10° K. to about 90° K. with substantially parallel columnar defects in which the smallest lateral dimension of the structure is less than about 5 microns, and the thickness of the structure is greater than 2 times the smallest lateral dimension of the structure.
    Type: Grant
    Filed: October 25, 2000
    Date of Patent: October 28, 2003
    Assignee: The University of Chicago
    Inventors: Goran T. Karapetrov, Wai-Kwong Kwok, George W. Crabtree, Maria Iavarone
  • Patent number: 6525002
    Abstract: An oxide superconductor includes a textured superconducting material including an array of defects with a neutron-fissionable element, or with at least one of the following chemical elements: uranium-238, Nd, Mn, Re, Th, Sm, V, and Ta. The array of defects is dispersed throughout the superconducting material. The superconducting material may be the RE1Ba2Cu3O7−&dgr; compound, wherein RE=Y, Nd, La, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb, Lu; the Bi2Sr2CaCu2Ox, the (Bi, Pb)2Sr2CaCu2Ox, Bi2Sr2Ca2Cu3Ox or (Bi, Pb)2Sr2Ca2Cu3Ox compound; the Tl2Ca1.5BaCu2Ox or Tl2Ca2Ba2Cu3Ox compound; or a compound involving substitution such as the Nd1+xBa2−xCu3Ox compounds. The neutron-fissionable element may be uranium-235. The oxide superconductor may include additional defects created by fission.
    Type: Grant
    Filed: May 6, 2000
    Date of Patent: February 25, 2003
    Inventor: Roy Weinstein
  • Patent number: 6352741
    Abstract: High temperature superconductive (HTS) integrated circuits can be fabricated in three ways according to the invention. First, a planar multiple layer HTS integrated circuit is fabricated using multiple HTS layers. The layers include altered regions which have been bombarded using ion implantation to destroy superconductivity of the altered regions without interrupting the lattice structure of the altered regions. Second, a planar multiple-layer HTS integrated circuit includes upper and lower HTS layers, each including central and opposing regions. A first implant energy is used to destroy superconducting properties of the opposing regions of the lower HTS layer without interrupting the lattice structure. A second implant energy is used to destroy superconducting properties of a top portion of the central region to define a contact. Third, a HTS integrated circuit is formed from a single HTS layer using three ion implantation steps and ions having first, second and third energies and range.
    Type: Grant
    Filed: April 17, 1995
    Date of Patent: March 5, 2002
    Assignee: TRW Inc.
    Inventors: Hugo W. K. Chan, Arnold H. Silver
  • Patent number: 6335108
    Abstract: An implant patterned superconductive device and a method for indirect implant-patterning of oxide superconducting materials is provided. The method forms a device having an oxide superconducting layer on a substrate, deposits a passivation layer atop the oxide superconducting layer, and implants chemical impurities in a selected portion of the superconducting layer through the passivation layer. This modifies the conductivity of the selected portion of the oxide superconducting layer and electrically isolates the selected portion from the non-selected portion of the oxide superconducting layer. The passivation layer is made of a material less susceptible to implant damage than the oxide superconducting layer to allow inhibition of the oxide superconducting layer while protecting the crystalline structure of the top surface of the oxide superconducting layer and keeping it planarized.
    Type: Grant
    Filed: September 7, 2000
    Date of Patent: January 1, 2002
    Assignee: TRW Inc.
    Inventors: John R. LaGraff, Claire L. Pettiette-Hall, James M. Murduck, Hugo W-K. Chan
  • Patent number: 6207067
    Abstract: A method for fabricating an oxide superconducting device includes the steps of: forming a V-shaped groove on a substrate by a converging ion beam and forming a barrier with reduced superconductivity on the oxide superconducting thin-film on the groove to form a Josephson Junction, wherein the irradiation ion amount of the converging ion beam is varied according to the position of the beam within the groove in such a manner that an inclination angle of the inclined portion of the substrate is fixed. An oxide superconducting device (a Josephson Junction device) having a high degree of flexibility in arrangement and with high reproducibility, and having a high degree of uniformity is provided.
    Type: Grant
    Filed: September 29, 1998
    Date of Patent: March 27, 2001
    Assignees: Mitsubishi Denki Kabushiki Kaisha, International Superconductivity Technology Center
    Inventors: Naoki Yutani, Katsumi Suzuki, Youichi Enomoto, Jian-Guo Wen
  • Patent number: 6147032
    Abstract: An implant patterned superconductive device and a method for indirect implant-patterning of oxide superconducting materials is provided. The method forms a device having an oxide superconducting layer on a substrate, deposits a passivation layer atop the oxide superconducting layer, and implants chemical impurities in a selected portion of the superconducting layer through the passivation layer. This modifies the conductivity of the selected portion of the oxide superconducting layer and electrically isolates the selected portion from the non-selected portion of the oxide superconducting layer. The passivation layer is made of a material less susceptible to implant damage than the oxide superconducting layer to allow inhibition of the oxide superconducting layer while protecting the crystalline structure of the top surface of the oxide superconducting layer and keeping it planarized.
    Type: Grant
    Filed: May 19, 1999
    Date of Patent: November 14, 2000
    Assignee: TRW Inc.
    Inventors: John R. LaGraff, Claire L. Pettiette-Hall, James M. Murduck, Hugo W-K. Chan
  • Patent number: 6083885
    Abstract: An oxide superconductor includes a textured superconducting material including an array of defects with a neutron-fissionable element, or with at least one of the following chemical elements: uranium-238, Nd, Mn, Re, Th, Sm, V, and Ta. The array of defects is dispersed throughout the superconducting material. The superconducting material may be the RE.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-.delta. compound, wherein RE=Y, Nd, La, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb, Lu; the Bi.sub.2 Sr.sub.2 CaCu.sub.2 O.sub.x, the (Bi, Pb).sub.2 Sr.sub.2 CaCu.sub.2 O.sub.x, Bi.sub.2 Sr.sub.2 Ca.sub.2 Cu.sub.3 O.sub.x or (Bi, Pb).sub.2 Sr.sub.2 Ca.sub.2 Cu.sub.3 O.sub.x compound; the Tl.sub.2 Ca.sub.1.5 BaCu.sub.2 O.sub.x or Tl.sub.2 Ca.sub.2 Ba.sub.2 Cu.sub.3 O.sub.x compound; or a compound involving substitution such as the Nd.sub.1+x Ba.sub.2-x Cu.sub.3 O.sub.x compounds. The neutron-fissionable element may be uranium-235. The oxide superconductor may include additional defects created by fission.
    Type: Grant
    Filed: January 13, 1998
    Date of Patent: July 4, 2000
    Inventor: Roy Weinstein
  • Patent number: 5952269
    Abstract: A method for forming a superconducting device using a selective etching technique on superconducting thin films. The method utilizes rapid etching which combines ion implantation with chemical etching. The portions of the superconducting film to be retained are masked from the ion implantation process. The chemical etching process then removes the implanted portions of the superconducting film at a much faster rate than the portions not implanted so that only the un-implanted portions remain. The resulting superconducting devices can be used, e.g., as nanostructures and nano tips, bolometers, multilayer RF coils, microwave waveguides and filters.
    Type: Grant
    Filed: January 23, 1998
    Date of Patent: September 14, 1999
    Assignee: The Trustees of Columbia University in the City of New York
    Inventors: Qiyuan Ma, Mingling Chen
  • Patent number: 5789346
    Abstract: Method for manufacturing a superconducting device including forming on a surface of a substrate a non-superconducting oxide layer, a first oxide superconductor thin film, etching the first oxide superconductor thin film so as to form a concave portion, implanting ions to the first oxide superconductor thin film at the bottom of the concave portion so as to form an insulating region such that the first oxide superconductor thin film is divided into two superconducting regions by the insulating region, and forming a second oxide superconductor thin film on the insulating region and the two superconducting regions, which is continuous to the two superconducting regions.
    Type: Grant
    Filed: May 20, 1996
    Date of Patent: August 4, 1998
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Takao Nakamura, Hiroshi Inada, Michitomo Iiyama
  • Patent number: 5702565
    Abstract: An improved dielectric layer of an electroluminescent laminate, and method of preparation are provided. The dielectric layer is formed as a thick layer from a ceramic material to provide:a dielectric strength greater than about 1.0.times.10.sup.6 V/m;a dielectric constant such that the ratio of the dielectric constant of the dielectric material to that of the phosphor layer is greater than about 50:1;a thickness such that the ratio of the thickness of the dielectric layer to that of the phosphor layer is in the range of about 20:1 to 500:1; anda surface adjacent the phosphor layer which is compatible with the phosphor layer and sufficiently smooth that the phosphor layer illuminates generally uniformly at a given excitation voltage.The invention also provides for electrical connection of an electroluminescent laminate to voltage driving circuity with through hole technology. The invention also extends to laser scribing the transparent conductor lines of an electroluminescent laminate.
    Type: Grant
    Filed: May 23, 1995
    Date of Patent: December 30, 1997
    Assignee: Westaim Technologies, Inc.
    Inventors: Xingwei Wu, James Alexander Robert Stiles, Ken Kok Foo, Phillip Bailey
  • Patent number: 5683968
    Abstract: A superconducting device or a super-FET has a pair of superconducting electrode regions (20b, 20c) consisting of a thin film (20) oxide superconductor being deposited on a substrate (5) and a weak/ink region (20a), the superconducting electrode regions (20b, 20c) being positioned at opposite sides of the weak link region (20a), these superconducting electrode regions (20b, 20c) and the weak link region (20a) being formed on a common plane surface of the substrate (5). The weak link region (20a) is produced by local diffusion of constituent element(s) of the substrate (5) and/or a gate electrode insulating layer (16) into the thin film (20) of the oxide superconductor in such a manner that a substantial wall thickness of the thin film (20) of the oxide superconductor is reduced at the weak link region (20a) so as to leave a weak link or superconducting channel (10) in the thin film (20) of oxide superconductor over a non-superconducting region (50) which is produced by the diffusion.
    Type: Grant
    Filed: August 31, 1995
    Date of Patent: November 4, 1997
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Takao Nakamura, Hiroshi Inada, Michitomo Iiyama
  • Patent number: 5677265
    Abstract: A process for the oxygenation of ceramic high T.sub.c superconductors is disclosed. The superconductor is formed from a sintered powdered ceramic. Microchannels are formed in the ceramic material by embedding in the powder a plurality of wires or fibers formed of a material which is thermally removable during the sintering process to leave thin, continuous, tubular channels. After sintering, the ceramic is exposed to oxygen in a high temperature, high pressure environment. The microchannels aid in the transport of oxygen into the interior of the material by providing passages along which the oxygen travels prior to diffusing into the material. The lengths of the diffusion paths in the material are thereby greatly shortened. In another embodiment, the channels are formed after sintering and prior to oxygenation by drilling, punching, or etching.
    Type: Grant
    Filed: March 3, 1995
    Date of Patent: October 14, 1997
    Assignee: Northeastern University
    Inventors: Bill C. Giessen, Robert S. Markiewicz, Bala Maheswaran, Thomas R. Gilbert
  • Patent number: 5597782
    Abstract: A method for improving the phase purity of a multiphase ceramic high temperature superconductor by selective microwave heating of undesired phases in a multiphase material to cause a phase transformation of the undesired phase to the desired phase. The selective microwave heating may be employed during initial firing and sintering of the ceramic superconductor compound or as a subsequent annealing step. Plane polarized microwave energy may be employed to enhance the two dimensional anisotropy of the compound by similar selective heating.
    Type: Grant
    Filed: January 9, 1995
    Date of Patent: January 28, 1997
    Inventor: David L. Henty
  • Patent number: 5547922
    Abstract: Superconductivity is inhibited in selected regions of a HTS material by subjecting the material to impurity ion bombardment at an energy level selected to implant ions in the material at a selected depth. The concentration of deposited ions varies with depth in the material according to a peaked depth distribution function which has a maximum at the selected depth. The material may be masked before implantation. After low temperature annealing, the material loses its superconducting characteristics in the selected regions but such characteristics are preserved at depths above and below the selected depth. The material's crystalline structure is preserved so additional layers can be epitaxially grown atop the inhibited material Multilayer HTS devices and circuits may be made by repeating the ion implantation and/or masking steps at with different ion energy levels.
    Type: Grant
    Filed: February 17, 1995
    Date of Patent: August 20, 1996
    Assignee: The University of British Columbia
    Inventor: Qi Y. Ma
  • Patent number: 5512540
    Abstract: A manufacturing method of a superconducting pattern is described. A superconducting ceramic film is deposited on a non-conductive surface and partly spoiled in order to form a barrier film by which two superconducting regions is separated. The spoiling is performed by adding a spoiling element into the ceramic film by ion implantation.
    Type: Grant
    Filed: October 14, 1994
    Date of Patent: April 30, 1996
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Shunpei Yamazaki
  • Patent number: 5498595
    Abstract: A method for activating superconducting material comprises generating a species of oxygen ions, heating the material and introducing the oxygen ions to said material by the application of a low-gradient drift field between the source of oxygen ions and a substrate including the superconducting material.
    Type: Grant
    Filed: August 16, 1994
    Date of Patent: March 12, 1996
    Assignee: British Technology Group Limited
    Inventor: William Eccleston
  • Patent number: 5453306
    Abstract: The generation of a reaction product is suppressed between a metallic substrate and plasma in depositing a ceramic intermediate layer on the metallic substrate in a process for depositing an oxide film on the metallic substrate by thermal plasma flash evaporation method. Thus, there is no reaction phase in the ceramic intermediate layer and the metallic substrate, and an intermediated buffer layer of only oxide ceramic is deposited on a flat surface of the metallic substrate. The intermediate ceramic layer is deposited in inert atmosphere of a low oxygen concentration at a temperature of less than 600.degree. C. for the metallic substrate. Then, a superconducting thin film is deposited on the ceramic intermediate layer.
    Type: Grant
    Filed: June 30, 1994
    Date of Patent: September 26, 1995
    Assignees: International Superconductivity Technology Center, Hokkaido Electric Power Co., Inc., Fujikura Ltd., Tokyo Gas Co., Ltd., Hitachi Cable, Ltd.
    Inventors: Noriyuki Tatsumi, Jiro Tsujino, Atsushi Kume, Yuh Shiohara, Shoji Tanaka, Shigenori Yuhya, Kei Kikuchi
  • Patent number: 5432149
    Abstract: A weak link is patterned from a high-temperature superconducting film using standard lithographic techniques. Once the area in which the weak link is to be located is defined, the remainder of the film is covered with an oxygen-impermeable material. The oxygen is then removed in the weak link area by placing the sample in a vacuum furnace at a sufficient temperature to drive out the oxygen. Once the oxygen is removed, the weak link becomes non-superconducting. A high power solid state laser is placed in front of the weak link, and superconductivity is restored in the weak link area, in situ. The process is performed in a liquid nitrogen environment.
    Type: Grant
    Filed: April 8, 1994
    Date of Patent: July 11, 1995
    Assignee: Regents of the University of California
    Inventors: Ivan K. Schuller, Gladys L. Nieva, Julio J. Guimpel, Eduardo Osquiguil, Yvan Bruynseraede
  • Patent number: 5314871
    Abstract: According to the present invention, when a superconductive thin film is formed on a substrate of a single crystal, a compound having a composition of SrNdGaO.sub.4 and a K.sub.2 NiF.sub.4 type crystal structure is used as a material employable for the substrate. Alternatively, a single crystal composed of an oxide in which Ca, La and Cr are added to the foregoing compound is used as a material employable for the substrate. Then, a superconductive thin film composed of an oxide is formed on the substrate by employing an epitaxial growing method. Thus, the present invention makes it possible to provide a superconductive material having an excellent property of lattice alignment, a stable and high critical superconductivity temperature and a stable critical superconductivity electric current.
    Type: Grant
    Filed: May 21, 1993
    Date of Patent: May 24, 1994
    Assignee: Kabushiki Kaisha Komatsu Seisakusho
    Inventor: Kozo Nakamura
  • Patent number: 5312804
    Abstract: A method of fabricating a superconductive flexible conductor having a high critical temperature in which method a deposit of superconductive ceramic is applied to a metal tape of thickness lying in the range 0.1 mm to 1 mm, wherein:the deposit of thickness lying in the range 50 .mu.m to 300 .mu.m and of concentration by volume of not less than 70% runs through an infrared beam at a speed of not less than 5 cm per minute, the zone treated by the the beam having a width of less than 10 mm relative to the travel direction and a surface temperature of not less than 1200.degree. C., thereby imparting a surface superconductive layer to the deposit which is of concentration by volume close to 100%, which is textured in the travel direction, and which is of thickness lying in the range 10 .mu.m to 100 .mu.m; andannealing is then performed under oxygen.
    Type: Grant
    Filed: October 28, 1992
    Date of Patent: May 17, 1994
    Assignee: Alcatel Cable
    Inventors: Alain Petitbon, Roland Queriaud
  • Patent number: 5304539
    Abstract: A beam (e.g. a focused laser beam) is utilized to irradiate the entire lateral width of a limited-extent portion of an elongated superconducting thin-film lead. The irradiated portion is converted to be non-superconducting and photoconductive. The converted portion constitutes a photodetector integrated with associated superconducting leads.
    Type: Grant
    Filed: May 12, 1992
    Date of Patent: April 19, 1994
    Assignee: Bell Communications Research, Inc.
    Inventors: Silas J. Allen, Robert R. Krchnavek