Magnetic Lens: (class 250/396) Patents (Class 505/871)
  • Patent number: 5099294
    Abstract: An edge defined geometry is used to produce very small area tunnel junctions (30) in a structure with niobium nitride superconducting electrodes (14, 28) and a magnesium oxide tunnel barrier (24). The incorporation of an MgO tunnel barrier with two NbN electrodes results in improved current-voltage characteristics, and may lead to better junction noise characteristics. The NbN electrodes are preferably sputter-deposited, with the first NbN electrode deposited on an insulating substrate maintained at about 250.degree. to 500.degree. C. for improved quality of the electrode.
    Type: Grant
    Filed: January 16, 1991
    Date of Patent: March 24, 1992
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventors: Brian D. Hunt, Henry G. LeDuc