Abstract: A sensor has an electrode (120) that is movable along three mutually perpendicular axes (10, 11, 12). The sensor also has stationary over-travel limiting structures that restrict the movement of the electrode (120) along the three axes (10, 11, 12).

Abstract: A chemical mechanical planarization tool (21) comprises a platen (22), a wafer carrier arm (31), a carrier assembly (37), a conditioning arm (28), and an end effector (33). A slurry delivery system (51) reduces waste by providing polishing chemistry at a minimum required delivery rate that ensures consistent wafer planarization. The slurry deliver system comprises a check valve (52), a diaphragm pump (53), a check valve (54), a back pressure valve (55), and a dispense bar (58). The diaphragm pump (53) provides a precise volume of polishing chemistry with each pump cycle, independent of input pressure. The check valves (52,54) prevent reverse flow of the polishing chemistry through the diaphragm pump (53). Back pressure valve (55) creates a pressure differential across the check valve (54) to prevent the flow of polishing chemistry during a downstroke of the diaphragm pump (53). The polishing chemistry is dispensed onto a polishing media from dispense bar (58).

Abstract: A semiconductor device includes a substrate (10) that can be cut into different sizes. A plurality of wirebond fingers (12) are formed on a top surface (13) of the substrate (10). The plurality of wirebond fingers (12) are located within concentric interconnect regions (23, 25, 27, 29, 31, 33, 35) and electrically connected to a via (14) by a signal interconnect line (11). The size of substrate (10) can be altered by cutting the substrate (10) to remove any of the interconnect regions (23, 25, 27, 29, 31, 33, 35). A semiconductor component (44) attached to the top side (13) of the substrate (10) can have a die pad (48) wirebonded to any of the plurality of wirebond fingers (12) located along the signal interconnect line (11) for connection to the via (14).

Abstract: An optimum condition detection method for flip-chip bonding that facilitates simple detection of optimum pressure and heating temperature for flip-chip bonding implemented by use of bonding material is provided.

Abstract: A semiconductor device (50) has a sensing element (30) and a transistor (40). The sensing element (30) is formed in a cavity (11) in a substrate (10). The sensing element (30) is formed in part using an epitaxial deposition process that fills the cavity (11) with a conductive material (18) such as polysilicon. A dielectric layer (17) is used to electrically isolate the sensing element (30) from the substrate (10).

Abstract: A method of manufacturing a semiconductor device includes creating ions in a chamber (201), using the ions to generate sputtered material from a target (241, 242) in the chamber (201), creating other ions from the sputtered material in the chamber (201), extracting the other ions out of the chamber (201), and implanting the other ions into the wafer (111).

Abstract: A dilution tool (100) and a method prepare a solution of two fluids for removing residue from a semiconductor wafer. The fluids are combined in a filter (130) to form the desired solution. Sealless pumps (141, 142) are driven by a common motor (143) to pump the fluids at a constant ratio of their respective flow rates while the flow rate of the solution varies. The conductivity of the solution is measured with a conductivity meter (166) to determine the concentration.

Abstract: A sensing structure (10) formed overlying a substrate (50), for example a semiconductor substrate, has a movable mass (12) substantially split into two halves with a self-test structure disposed between the two halves. The self-test structure has a plurality of single-capacitor actuators for displacing the movable mass. Each actuator is formed by a movable finger (18) connected to the movable mass and a fixed finger (44) mounted by an anchor to the substrate. Each actuator is shielded by a fixed shield finger (42) so that all actuators force the movable mass in a common direction.

Abstract: A semiconductor package (10) forms an impedance matching capacitor by utilizing an insulator (12), a conductor (19) on the dielectric, and a substrate (11) as elements of the capacitor. The capacitor is electrically connected, as part of an impedance matching network to shunt the inductance of the bonding wires (21) that connect the semiconductor die (18) an input lead (17).

Abstract: A method of in-situ endpoint detection for membrane formation including directing light from a light source onto one side of a membrane structure having at least one etchable component for the formation of a membrane and etching the membrane structure so as to form the membrane while sensing the light from the light source on an opposite side of the membrane structure in-situ during the etching to detect a thickness of the membrane. Generally, the etching step includes fountain cup etching with the light source being a fiber optic mounted in the fountain cup and a detector mounted in the cap.

Abstract: An electronic component includes a substrate (201) with a surface (202), a resistor structure (210) supported by the substrate, and a passivation layer (300, 805) over the resistor and the surface of the substrate where the passivation layer has a hole (311, 312, 611, 612, 613, 614, 711, 811), where the surface of the substrate has a compressive portion and a tensile portion, and where the resistor is located between the compressive and tensile portions of the surface.

Abstract: An optical device package (18) includes an optical transmitter die (10) encapsulated within mold material (20). The mold material (20) allows light emitted from the optical transmitter (10) to pass through the package (18) and can have a lens pattern (22) molded therein to focus the light emitted from the optical transmitter. The mold material (20) can also have coupling patterns (32) formed therein to allow a supplemental lens assembly (28) to be coupled thereto so that supplemental lens patterns (30) formed in the supplemental lens assembly (28) can focus the light emitted from the optical transmitter (10). The optical device package (18) can also include an optical receiver (40) enclosed within the mold material (20) and mounted on a substrate (42) with the optical transmitter (10) to provide a complete optical product in one package (18).

Abstract: A chip scale power semiconductor device (16) provides improved heat dissipation. A semiconductor die (19) is mounted in a first region of a substrate (18). The substrate is extended to a second region for disposing terminals (38) to make external connections to the semiconductor device. Conductors (34) formed on the substrate electrically couple the semiconductor die to the terminals. The substrate is extended for a predetermined distance to separate the second region from the first region for isolating the temperature of the semiconductor die from the local temperature at the terminals.

Abstract: A method for connecting substrates includes using an adhesive interposer structure (11) to bond a semiconductor device (26) to a substrate (18). The adhesive interposer structure (11) includes a non-conductive adhesive laminant (12) and conductive adhesive bumps (13). The conductive adhesive bumps (13) provide a conductive path between conductive bumps (27) on the semiconductor device (26) and conductive metal pads (21) located on the substrate (18). In an alternative embodiment, a conductive adhesive material (34) is screen or stencil printed into vias (39) located on a printed circuit board (38) to form conductive adhesive bumps (33). A non-conductive adhesive (52) is then screen or stencil printed onto the printed circuit board (38) adjacent the conductive adhesive bumps (33). A semiconductor die is then connected to the structure.

Abstract: An image sensor (10) has an image sensing element that includes an N-type conducting region (26) and a P-type pinned layer (37). The two regions form two P-N junctions at different depths that increase the efficiency of charge carrier collection at different frequencies of light. The conducting region (26) is formed by an angle implant that ensures that a portion of the conducting region (26) can function as a source of an MOS transistor (32).

Abstract: A method for pre-shaping a major surface (21,22) of a semiconductor wafer (20) in preparation for polishing includes shaping the major surface (21,22) so that it has a concave shape. In a preferred method, an etching process is used to form the concave shape. The concave shape provides a starting wafer that is extremely flat after polishing.

Abstract: A container for dispersing liquid through a dispenser is described. The container has a resealable outlet which has an outlet passageway in a tube and a stop wedged in the passageway to seal the liquid in the container. The passageway is accessible beneath the stop by a dispenser peg for insertion in the tube to push the stop inward toward the interior of the container. A means for containing the stop is adjacent the passageway inlet. The stop reseals the passageway by covering the passageway inlet after a dispenser peg is removed from the passageway.

Abstract: A dispenser is described having a support for the container to be filled, a source of liquid and a switch controlling the flow of liquid into the container. The container is supported by a support which urges the container up or down. The switch is operated by the container such that when the container is empty it urges against a resilient mechanism which activates the switch. When the container is filled its weight overcomes the resilient mechanism.

Abstract: A surfactant-modified polymer and method of making the same. The surfactant-modified polymer has a polycarboxylate backbone with non-ionic surfactant chemically associated therewith and is formed by the reaction of a reactant compound selected from the group consisting of carboxylic acids, polycarboxylic acids and mixtures thereof in an aqueous media in the presence of a nonionic surfactant.