Abstract: Both homojunction and heterojunction bipolar transistor structures are fabricated in unique trenched configurations so as to better utilize their surface areas by employing both the vertical and horizontal portions of their base regions with equal effectiveness. An important advantage of the unique trenched configurations is that the base region of each trenched structure is of precisely the same thickness throughout--both vertical and horizontal portions. Consequently, the transit time for charge carriers to diffuse across the base region and the base transport factor are uniform because of the uniform base thickness. Moreover, the parasitic capacitance region of each trenched structure beneath base metallization contacts is only a small portion of the entire base-collector junction region.
Type:
Grant
Filed:
November 22, 1991
Date of Patent:
May 10, 1994
Assignee:
The United States of America as represented by the Secretary of the Navy
Abstract: An apparatus for and a method of growing thin films of the elemental semiconductors (group IVB), i.e., silicon, germanium, tin, lead, and, especially diamond, using modified atomic layer epitaxial (ALE) growth techniques are disclosed. In addition, stoichiometric and nonstoichiometric compounds of the group IVB elements are also grown by a variation of the method according to the present invention. The ALE growth of diamond thin films is carried-out, inter alia, by exposing a plurality of diamond or like substrates alternately to a halocarbon reactant gas, e.g., carbon tetrafluoride (CF.sub.4), and a hydrocarbon reactant gas, e.g., methane (CH.sub.4), at substrate temperatures between 300 and 650 Celsius. A stepping motor device portion of the apparatus is controlled by a programmable controller portion such that the surfaces of the plurality of substrates are given exposures of at least 10.sup.15 molecules/cm.sup.2 of each of the reactant gases.
Type:
Grant
Filed:
June 22, 1990
Date of Patent:
July 6, 1993
Assignee:
The United States of America as represented by the Secretary of the Navy
Abstract: An antifouling marine paint having an antibotic active agent which (1) is toxic to gram negative organisms of the genus Oceanospirillum, (2) is relatively insoluble in seawater to permit a slow leaching into the paint-seawater interface, and (3) is non-photolytic, i.e., is not degraded by exposure to sunlight. Further, when used with a copper base antifouling paint, the antibiotic must not be broken down by the copper in the paint. The antibotic may be selected from the group consisting of chloramphenicol, erythromycin, neomycin, and streptomycin.
Type:
Grant
Filed:
September 20, 1991
Date of Patent:
September 1, 1992
Assignee:
The United States of America as represented by the Secretary of the Navy
Inventors:
Arthur V. Stiffey, Kevin R. Hart, Diane K. Arwood