Abstract: A nonvolatile memory device and a method for fabricating the same decreases power consumption and prevents contamination of an insulating layer. The nonvolatile memory devices includes a semiconductor substrate; a tunneling oxide layer formed on a predetermined portion of the semiconductor substrate; a floating gate formed on the tunneling oxide layer, the floating gate having a trench structure; a control gate formed inside the trench structure of the floating gate; and a gate insulating layer disposed between the floating gate and the control gate.