Abstract: Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including, but not limited to, critical dimension and a presence of defects. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.

Abstract: Systems and methods for forming an image of a specimen are provided. A system may include a relay lens configured to form an intermediate image of light scattered by a specimen. The relay lens may be positioned at an oblique viewing angle from an upper surface of the specimen. The system may also include a reflection grating positioned such that the intermediate image is imaged on the reflection grating. The reflection grating may be configured to reflect the intermediate image. The reflection grating may be positioned negative to the upper surface of the specimen, at the natural image plane. In addition, the system may include an objective lens configured to focus the reflected intermediate image. The system may further include an area detector configured to produce a signal representative of the focused image. An image of the specimen may be formed from the produced signal.

Abstract: Microspheres are constructed using magnetic particles. Hybrid microspheres are constructed using fluorescent or luminescent microspheres and magnetic nanoparticles. Reactive moieties on the surface of the resultant particles can be used for attachment of biologically active molecules, thus allowing selective separations and analytical assays to be performed. Distinguishable subsets of microspheres can be constructed based on fluorescent intensities, and separations can be affected based on variable degree of magnetic content.

Abstract: Systems and methods for scanning a beam of light over a specimen are provided. A system may include a pre-scan acousto-optical deflector (AOD) configured to deflect a beam of light, a second AOD configured as a traveling lens to focus the scanning beam, a relay lens, and an objective lens. The relay lens may be centered on the scan line produced by the second AOD, while the objective lens may be substantially de-centered with respect to the relay lens to produce a telecentric scanning spot with no field tilt. The system may modulate the amplitude of the sound wave in the first AOD to compensate for attenuation in the second AOD. The system may pre-fill one chirp packet in the second AOD while another chirp packet is scanning to substantially reduce a delay between consecutive scans.

Abstract: A method to detect metal contamination on a semiconductor topography is provided. The semiconductor topography may include a semiconductor substrate or a dielectric material disposed upon a semiconductor substrate. The metal contamination may be driven into the semiconductor substrate by an annealing process. Alternatively, the annealing process may drive the metal contamination into the dielectric material. Subsequent to the annealing process, a charge may be deposited upon an upper surface of the semiconductor topography. An electrical property of the semiconductor topography may be measured. A characteristic of at least one type of metal contamination may be determined as a function of the electrical property of the semiconductor topography. The method may be used to determine a characteristic of one or more types of metal contamination on a portion of the semiconductor topography or the entire semiconductor topography.

Abstract: Non-contact methods for determining a property of an insulating film are provided. One method includes measuring an amount of hysteresis in the insulating film without contacting the insulating film. The method also includes determining the amount of hysteresis in the insulating film. Computer-implemented methods for data analysis are also provided. One computer-implemented method includes determining a single numeric value representing an amount of hysteresis in an insulating film from electrical characteristics of the insulating film. The electrical characteristics are measured without contacting the insulating film. In addition, systems that include a measurement system and a computer-usable carrier medium are provided. The measurement system is configured to measure an amount of hysteresis in an insulating film without contacting the insulating film.

Abstract: Methods and systems for evaluating and controlling a lithography process are provided. For example, a method for reducing within wafer variation of a critical metric of a lithography process may include measuring at least one property of a resist disposed upon a wafer during the lithography process. A critical metric of a lithography process may include, but may not be limited to, a critical dimension of a feature formed during the lithography process. The method may also include altering at least one parameter of a process module configured to perform a step of the lithography process to reduce within wafer variation of the critical metric. The parameter of the process module may be altered in response to at least the one measured property of the resist.

Abstract: A calibration standard which may be used to calibrate lateral dimensional measurement systems is provided. The calibration standard may include a first substrate spaced from a second substrate. In addition, the calibration standard may include at least one layer disposed between the first and second substrates. The layer may have a traceably measured thickness. For example, a thickness of the layer may be traceably measured using any measurement technique in which a measurement system may be calibrated with a standard reference material traceable to a national testing authority. The calibration standard may be cross-sectioned in a direction substantially perpendicular to an upper surface of the first substrate. The cross-sectioned portion of the calibration standard may form a viewing surface of the calibration standard. In this manner, a lateral dimensional artifact of the calibration standard may include the traceably measured thickness of at least the one layer.

Abstract: Systems and methods for determining the height of a surface of a specimen, such as a surface of a semiconductor device wafer are provided. A system may be configured to generate a comparison signal that may used to alter a Z-axis fine height adjustment of the system. The system may include for example, a processing tool, a metrology tool, or an inspection tool that may be used in semiconductor device fabrication. In this manner, the system may be configured to maintain a constant working distance between the wafer surface and an optical column of the system. A system may include an off-axis dual beam symmetric height sensor due to mechanical constraints of the system. The dual beam symmetric height sensor may provide automatic focusing of the wafer with high precision by substantially eliminating wafer pattern-induced error in comparison signals generated by the system.

Abstract: A magnetic lens configured to apply a magnetic field to a charged particle beam is provided. The magnetic lens may include an outer pole piece and an inner pole piece. The outer pole piece may have at least two sectors and at least two slots. The magnetic lens may also have a primary coil winding interposed between the outer pole piece and the inner pole piece. In addition, the magnetic lens may have a number of sector coil windings, and each sector of the outer pole piece may be coupled to one sector coil winding. A magnetic potential of the outer pole piece relative to the inner pole piece may be generated by applying a current to the primary coil winding. A separate magnetic potential of each sector may also be generated by applying a current to the respective sector coil windings of each sector of the outer pole piece.

Abstract: A process control method to monitor ion implantation process conditions by measuring the optical properties of a masking material is provided. A patterned masking material may protect underlying regions of a semiconductor substrate from undergoing a chemical or physical change during an ion implantation process. The patterned masking material, however, may also undergo a chemical or physical change during processing. The chemical or physical changes to the masking material during such processing may also cause the optical properties of the material to change. The optical properties of the masking material may be used to determine the concentration of ions implanted into the semiconductor substrate.