Abstract: Sensitive deep ultraviolet resists are formed utilizing a material that undergoes decomposition to form an acid together with a polymer including a chain scission inducing monomer such as sulfonyl units and substituent that undergoes reaction to form an acidic moiety when subjected to the photogenerated species. An exemplary composition includes poly(t-butoxycarbonyloxystyrenesulfone) and 2,6-dinitrobenzyl-p-toluene sulfonate. The sulfonate decomposes to form sulfonic acid upon irradiation. This acid reacts with the polymer group to form an acid functionality while the sulfone moiety of the polymer induces scission. As a result, the irradiated portions of the resist material are soluble in ionic solvents while the unirradiated portions are not.

Abstract: Smoothing irregularities in a surface is accomplished by a wet-etchback technique. In this technique, a polysilicate composition is formed on a nonplanar substrate such as the surface of an integrated-circuit wafer. The polysilicate is etched away and the etching is continued into the underlying surface. As a result, a substantial smoothing of the surface is obtained.

Abstract: Silicon nitride regions suitable for applications such as capping layers in integrated circuit fabrication are produced by an advantageous plasma deposition process. This process utilizes a combination of gases, including a silicon-containing gas, a nitrogen-containing gas, a fluorine-containing gas, and a hydrogen-containing gas. Silicon nitride having a low density of defect states and thus having excellent dielectric properties is produced.