Abstract: An architecture that adapts low speed mobile data over higher speed digital channels, comprising: Intersystem Link Protocol (ISLP) framing structure having ISLP service data units; circuit-mode data carried by the ISLP service data units; a set of call processing and handoff messages, said set including Assignment Request, Assignment Complete, Handoff Required, Handoff Request, and Handoff Request Acknowledge; an indicator incorporated into said set; and digital channels responsive to said indicator to transport the circuit-mode data via the ISLP service data units over an A-interface between a base station (BS) and a mobile switching center (MSC).

Abstract: Transistors formed according to the present invention include an oxide layer/nitride layer gate insulator and a silicide gate conductor. An oxide layer is formed to a thickness of between 15 and 25 Angstroms across a substrate and partially removed so that a thickness of approximately 4 Angstroms remains. A nitride layer is formed upon oxide layer to a thickness of 10 to 20 Angstroms. Polysilicon gate conductors are then formed above the active regions of the substrate using a deposition and patterning technique. Spacers are then formed about the polysilicon gate conductor, lightly doped drain regions are formed and then source/drain regions are formed. In forming the lightly doped drain regions and the source/drain regions, the polysilicon gate conductor is doped. Then, a silicidation metal layer is deposited upon the polysilicon gate conductors and exposed portions of the nitride layer.

Abstract: A method of forming a transistor includes forming a source/drain implant in the initial processing stages just after the formation of the isolation and active regions on the substrate. A dielectric layer is then formed on the surface of the substrate, portions of which are then etched to define a channel opening for the device. A uniform nitride layer is formed over the surface of the substrate. The nitride layer is then etched to create nitride sidewall spacers. Additionally, the channel region is then etched to remove the doped portions of the active region. A gate dielectric is then formed, the gate dielectric including a nitrogen bearing oxide and a high K material. A gate conductor is then formed upon the high K material. A silicidation step is then performed. In alternative embodiments, the source/drain region is not formed and the source and drain are doped after the gate is complete. In the embodiment, the gate resides upon the active region and etching into the active region is not required.

Abstract: An integrated circuit includes a plurality of transistors formed to include insulative punchthrough regions. Each of the plurality of transistors includes a channel formed upon a substrate, an insulative punchthrough region formed below the channel, a source formed upon the insulative punchthrough region residing adjacent a first end of the channel, a drain formed upon the insulative punchthrough region residing adjacent a second end of the channel, a gate oxide formed above the channel and a gate conductor formed above the gate oxide. Isolation regions may also be formed in the substrate that have an etch stop defination that was formed upon formation of the insulative punchthrough region. A voltage threshold region may be formed between the gate oxide and the channel and lightly doped regions may be formed adjacent the channel. The insulative punchthrough region may be and oxide layer formed within the substrate in an oxygen implant step that also formed the etch stop defination.

Abstract: A method of making a MOS transistors in an integrated circuit includes forming a plurality of doped source and drain regions adjacent respective gate structures that include gate dielectrics, gate conductors and spacers. The plurality of doped source and drain regions are formed at different depths, at different doses and with differing dopants. In one embodiment, first doped source and drain regions are formed at a first depth, at a first dose using a first dopant while second doped source and drain regions are formed at a second depth, at a second dose using a second dopant. The first depth is shallower than the second depth so that the first doped source and drain regions serve as sacrificial doped regions that are consumed in a silicidation process when they are converted into a silicide by being combined with a silicidation metal. However, the second doped source and drain regions maintain their doping profiles and dopant levels.

Abstract: A personal mobility system determines a terminal address corresponding to a called user based upon a personal identifier of the called user. The personal mobility system operates in conjunction with a plurality of heterogeneous networks to provide the terminal address corresponding to the called user, independent of the particular network within which the called user currently operates. The personal mobility system includes a personal mobility user application and a personal mobility server application. The personal mobility user application receives a request from a calling user, the request including the personal identifier of a called user. The personal mobility server application couples to the personal mobility user application and includes a plurality of user records. Each user record is respective to a user and is indexed by a respective personal identifier. Further, each user record includes a plurality of terminal records with each of the terminal records including a respective terminal address.

Abstract: A wireless communication system facilitates wireless communication with a mobile unit operating within a respective service area. The wireless communication system includes a mobile switching center and a plurality of base stations with each base stations coupled to the mobile switching center and providing wireless coverage within a respective portion of the service area. The mobile unit wirelessly connects to at least two of the base stations (or sectors of the base stations) that transmit to the mobile unit via respective forward links at respective transmit levels. These respective transmit levels are based upon forward link requirements of the mobile unit. The mobile unit transmits to the at least two base stations/sectors via a respective plurality of reverse links. Forward link transmit levels may be determined based upon the quality of corresponding reverse link transmissions or from the quality of pilot signals or forward link transmissions received by the mobile unit.

Abstract: A method for distributing paging load in a multicell wireless communication system establishes a plurality of location areas, with each location area including at least one cell. A load limit is based upon the greatest number of pages that may be transmitted in a particular cell over a given time period for cells of the multicell wireless communication system is determined. A paging load for the cellular wireless communication system is determined based upon historical loading and/or simulations and projections. A plurality of location areas are determined so that the paging load is distributed among the plurality of location areas such that a partial paging load respective to each cell of the multicell wireless communication system is less than a respective load limit. Boundaries of the location areas are then chosen to substantially minimize registration load within the multicell wireless communication system.

Abstract: A satellite communication system provides multicast messaging services to subscriber units. Upon receipt of a multicast communication page from a satellite communication system network, a subscriber unit waits for a random delay period and then responds with an acknowledge signal. Based upon the time of receipt of the acknowledge signal, e.g., within one of a plurality of time periods, the satellite communication system network assigns the subscriber unit to one of a plurality of traffic channels. The satellite communication system infrastructure then sends a multicast communication message to the subscriber unit on the assigned traffic channel. The subscriber unit then waits for a random delay period and then responds with an acknowledge signal. The satellite communication system network then receives the acknowledge signal.

Abstract: A communication system provides wireless voice and multimedia communications and includes a base station, a plurality of wireless mobile units and a bandwidth allocator. The base station provides wireless coverage throughout a service area and has a bandwidth for providing the wireless coverage. The plurality of wireless mobile units operate within the service area and communicate with the base station to transmit and receive both voice communications and multimedia communications. The bandwidth allocator selectively allocates the bandwidth in response to wireless multimedia communication requirements to achieve a minimum transmission rate for multimedia communications. The communication system may include a plurality of channels, each having a channel bandwidth with the bandwidth allocator selectively allocating the channels in response to the multimedia communication requirements to achieve the minimum transmission rate.

Abstract: A wireless communication system constructed according to the present invention assigns each serviced mobile unit to a serving mobile switching center to minimize mobility management overhead and to equalize loading among a plurality of mobile switching centers. The wireless communication system includes the plurality of mobile switching centers and a base station system which includes a plurality of base station controllers, each of which couples to a plurality of base stations. A plurality of mobile units served by the system are assigned to the mobile switching centers so that loading is equalized. In one particular construction of the wireless communication system, a dispatching switch couples the base station system to the plurality of mobile switching centers and performs the assignments of the mobile units. In an example of operation, upon attachment of a mobile unit, the dispatching switch determines loading of each of the mobile switching centers.

Abstract: A self engineering system includes a data acquisition module, a self engineering engine, and a control module. The data acquisition module couples to the communication system and receives current operating data of the communication system. The self engineering engine receives the current operating data and determines new operating parameters of the communication system based upon the current operating data and current operating parameters. The control module implements the new operating parameters within the communication system. The self engineering system may include an expert system that receives the current operating data and, based upon the current operating data and the current operating parameters of the communication system, produces the new operating parameters. The expert system includes a fact library, a knowledge base and an inference engine. The fact library includes configuration data, historical operating data, the current operating parameters and proposed operating parameters.

Abstract: A wireless communication system provides wireless service to a mobile unit operating within a service area and includes a mobile switching center, at least one base station controller, a first plurality of base stations and a second plurality of base stations. The first plurality of base stations couple to the at least one base station controller and operate on a first carrier frequency. The second plurality of base stations couple to the at least one base station controller and operate on a second carrier frequency. The mobile switching center and the at least one base station controller operate to assign the mobile unit to at least one of the first plurality of base stations or at least one of the second plurality of base stations based upon available base station capacities. The wireless communication system may operate according to a code division multiple access protocol.

Abstract: A method of forming a transistor includes forming a gate dielectric layer upon a substrate, forming a polysilicon layer upon the gate dielectric layer and then forming a thin nitride layer upon the gate polysilicon layer. The thin nitride layer is then pattern etched to define a nitride cap above a future channel. The gate polysilicon layer and a portion of the silicon substrate below the gate dielectric layer is then doped with arsenic. An optional annealing step then causes some of the arsenic to migrate below the nitride cap. A subsequent oxidation step then causes gate conductor/gate oxide stacks with integrated spacers to be defined below the nitride cap. The oxidation step and optional prior annealing step also cause some arsenic to migrate into the channel to form the LDD regions. The substrate is etched to remove portions of the gate polysilicon layer unprotected by the nitride cap.

Abstract: This invention comprises of a synthetic intervertebral disc for implantation in the human body. The disc, in its preferred embodiment, is comprised of disc-shaped plates 11(a&b) joined by springs along the inside of the outer perimeter. The plates have oval-like cutouts in their centers for a compressible polymeric core 12 to protrude from on top and bottom. The polymeric core 12 aids in the fitting of the device between the concave surfaces of two vertebrae. An elastomeric covering 14 encircles the area between the plates and is connected to the plates 11(a&b) on top and bottom to prevent body tissues from interfering with the movement of the springs 13(a-i). The spring system distributes forces acting on the disc between the springs and allows normal movement of the vertebrae during flexion and extension of the spine in any direction.