Abstract: A semiconductor device has a plurality of bump electrodes for external connection arrayed two-dimensionally on the surface of a semiconductor chip where the desired elements and wirings are formed. The bump electrodes include a first group of bump electrodes, a second group of bump electrodes arrayed at the outer periphery of the first group of bump electrodes, and a third group of bump electrodes, arrayed at the outer periphery of the second group of bump electrodes. The first and second groups of bump electrodes are arrayed in a grid with intervals Sx1 in the X direction and Sy1 in the Y direction. The third group of bump electrodes has a structure satisfying Sx2>Sx1 and Sy2>Sy1, where Sx2 and Sy2 are orthogonal intervals for the third group of bump electrodes along axes diagonal to axes of intervals of the first and second groups of bump electrodes.